CN111696932A - 芯片固接结构及芯片固接设备 - Google Patents

芯片固接结构及芯片固接设备 Download PDF

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CN111696932A
CN111696932A CN201910327526.3A CN201910327526A CN111696932A CN 111696932 A CN111696932 A CN 111696932A CN 201910327526 A CN201910327526 A CN 201910327526A CN 111696932 A CN111696932 A CN 111696932A
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chip
circuit substrate
micro
chips
heater
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廖建硕
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Skiileux Electricity Inc
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Asti Global Inc Taiwan
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Abstract

本发明公开一种芯片固接结构及芯片固接设备。芯片固接结构包括：电路基板以及多个微加热器。电路基板具有多个焊垫。多个微加热器设置在所述电路基板上，所述微加热器邻近所述焊垫。其中，多个芯片设置在所述电路基板上，所述芯片通过至少一个锡球而电连接于所述焊垫。借此，本发明通过一种芯片固接结构及芯片固接设备，来提升工艺的焊接良率。

Description

芯片固接结构及芯片固接设备
技术领域
本发明涉及一种承载结构及承载设备，特别是涉及一种芯片固接结构及芯片固接设备。
背景技术
近年来，随着电子及半导体技术的日新月异，使得电子产品不断地推陈出新，并朝向轻、薄、短、小的趋势设计。而电路板广泛地使用于各种电子设备当中。电路板表面上通常具有多个焊接垫，在工艺中将焊料形成于电路板的焊接垫上，接着利用回焊处理将各种电子零件固定于电路板上，而各个电子零件通过电路板内的线路层彼此电连接。
目前回焊处理可以用回焊炉、红外加热灯或热风枪等不同加温方式来进行焊接。虽然上述回焊处理的加温方法大致符合使用上的需求，但仍有需要对工艺进行改良，以提高工艺的良率及效能，并降低生产成本。
发明内容
本发明所要解决的技术问题在于，针对现有技术的不足提供一种芯片固接结构及芯片固接设备。
为了解决上述的技术问题，本发明所采用的其中一技术方案是，提供一种芯片固接结构，包括：电路基板以及多个微加热器。电路基板具有多个焊垫。多个微加热器设置在所述电路基板上，所述微加热器邻近所述焊垫。其中，多个芯片设置在所述电路基板上，所述芯片通过至少一个锡球而电连接于所述焊垫。
优选地，所述电路基板为单一基板或是复合式基板。
优选地，所述多个芯片分别对应地设置在所述多个微加热器的上方，且所述芯片为IC芯片或者LED芯片。
优选地，所述微加热器对所述锡球进行加热。
为了解决上述的技术问题，本发明所采用的另外一技术方案是，提供一种芯片固接结构，包括：电路基板以及至少一个微加热器。电路基板承载至少一个芯片。至少一个微加热器被所述电路基板所承载，以加热至少一个所述芯片所接触的至少一个锡球。
优选地，至少一个所述芯片通过至少一个所述锡球，以固接在所述电路基板上且脱离所述电路基板的承载。
优选地，至少一个所述微加热器设置在至少一个所述芯片的其中一侧旁。
为了解决上述的技术问题，本发明所采用的另外再一技术方案是，提供一种芯片固接设备，包括：芯片固接结构以及吸附结构。芯片固接结构包括电路基板以及被所述电路基板所承载的至少一个微加热器。吸附结构设置在所述芯片固接结构的上方，以将至少一个芯片吸附且转移到所述芯片固接结构。其中，至少一个所述芯片被所述电路基板所承载，至少一个所述微加热器加热至少一个所述芯片所接触的至少一个锡球。
优选地，至少一个所述芯片通过至少一个所述锡球，以固接在电路基板上；其中，至少一个所述芯片为IC芯片或者LED芯片；其中，所述吸附结构为真空吸嘴模块或者静电吸附模块。
优选地，所述芯片固接设备进一步包括：激光加热模块，设置在所述芯片固接结构的上方，以对至少一个所述锡球投射激光光源。
本发明的其中一有益效果在于，本发明所提供的芯片固接结构，能通过“电路基板具有多个焊垫”、“多个微加热器设置在所述电路基板上，所述微加热器邻近所述焊垫”以及“多个芯片设置在所述电路基板上，所述芯片通过至少一个锡球而电连接于所述焊垫”的技术方案，以提升工艺的焊接良率。
本发明的另外一有益效果在于，本发明所提供的芯片固接结构，能通过“电路基板承载至少一个芯片”以及“至少一个微加热器被所述电路基板所承载，以加热至少一个所述芯片所接触的至少一个锡球”的技术方案，以提升工艺的焊接良率。
本发明的另外再一有益效果在于，本发明所提供的芯片固接设备，能通过“芯片固接结构包括电路基板以及被所述电路基板所承载的至少一个微加热器”、“吸附结构设置在所述芯片固接结构的上方，以将至少一个芯片吸附且转移到所述芯片固接结构”以及“至少一个所述芯片被所述电路基板所承载，至少一个所述微加热器加热至少一个所述芯片所接触的至少一个锡球”的技术方案，以提升工艺的焊接良率。
为使能进一步了解本发明的特征及技术内容，请参阅以下有关本发明的详细说明与附图，然而所提供的附图仅用于提供参考与说明，并非用来对本发明加以限制。
附图说明
图1为本发明第一实施例的芯片固接结构的第一结构示意图。
图2为本发明第一实施例的芯片固接结构的第一实施示意图。
图3为本发明第一实施例的芯片固接结构的第二实施示意图；同时，也为本发明第一实施例的芯片固接设备的结构示意图。
图4为本发明第一实施例的芯片固接结构的第二结构示意图。
图5为图4的V部分的放大示意图。
图6为本发明第一实施例的芯片固接结构的第三结构示意图。
图7为本发明第一实施例的芯片固接结构的第三实施示意图。
图8为本发明第一实施例的芯片固接结构的第四实施示意图。
图9为本发明第一实施例的芯片固接结构的第五实施示意图。
图10为本发明第二实施例的芯片固接结构的第一结构示意图。
图11为本发明第二实施例的芯片固接结构的第一实施示意图。
图12为本发明第二实施例的芯片固接结构的第二实施示意图。
图13为本发明第二实施例的芯片固接结构的第三实施示意图。
图14为本发明第二实施例的芯片固接结构的微加热器与焊垫的第一结构设置示意图。
图15为本发明第二实施例的芯片固接结构的微加热器与焊垫的第二结构设置示意图。
图16为本发明第二实施例的芯片固接结构的微加热器与焊垫的第三结构设置示意图。
具体实施方式
以下是通过特定的具体实施例来说明本发明所公开有关“芯片固接结构及芯片固接设备”的实施方式，本领域技术人员可由本说明书所公开的内容了解本发明的优点与效果。本发明可通过其他不同的具体实施例加以施行或应用，本说明书中的各项细节也可基于不同观点与应用，在不脱离本发明的构思下进行各种修改与变更。另外，本发明的附图仅为简单示意说明，并非依实际尺寸的描绘，事先声明。以下的实施方式将进一步详细说明本发明的相关技术内容，但所公开的内容并非用以限制本发明的保护范围。
应当可以理解的是，虽然本文中可能会使用到“第一”、“第二”、“第三”等术语来描述各种元件，但这多个元件不应受这多个术语的限制。这多个术语主要是用以区分一元件与另一元件。另外，本文中所使用的术语“或”，应视实际情况可能包括相关联的列出项目中的任一个或者多个的组合。
[第一实施例]
参阅图1至图9所示，本发明第一实施例提供一种芯片固接结构S1，包括：电路基板1以及至少一个微加热器2。电路基板1承载至少一个芯片3。至少一个微加热器2被电路基板1所承载，以加热至少一个芯片3所接触的至少一个锡球4。
首先，配合图1所示，本发明的芯片固接结构S1包括了电路基板1以及至少一个微加热器2，在本实施例中以多个微加热器2作为示例，但不以此为限。电路基板1可为单一基板或是复合式基板，但不以此为限。电路基板1间隔设置了多个微加热器2；其中，多个微加热器2可以串联或并联等方式设置，并与一供电端(例如市电或主机，但不以此为限)电连接，且微加热器2可设置于电路基板1的表面，或嵌设于电路基板1中，而在本实施例中以微加热器2嵌设于电路基板1中作为示例，但不以此为限。并且，电路基板1还包括多个焊垫10。每一个焊垫10上可以设置至少一个锡球4，或是其他型体且具导电性的材料。然而，本发明不以上述所举的例子为限。
接着，配合图2及图3所示，本发明可通过吸附结构S2吸附芯片3，吸附结构S2可为真空吸嘴模块或者静电吸附模块，在本实施例中以静电吸附模块作为示例，但不以此为限。进一步来说，本发明可先通过吸附结构S2使用相反电荷的吸力吸附一个或多个的芯片3，再将芯片3放置于电路基板1上。而后，通过吸附结构S2取消相反电荷之吸力而使芯片3承载在电路基板1，并且，多个芯片3分别对应地设置在多个微加热器2的上方。其中，至少一个芯片3为IC芯片或者LED芯片。
最后，配合图3及图4所示，每一个微加热器2加热至少一个锡球4。举例来说，在供给电能至每一个微加热器2后，每一个微加热器2可对所对应的至少一个锡球4进行加热，以使锡球4产生软化，而与芯片3产生连接。接着，在锡球4固化后，会使得芯片3被固接在电路基板1，并通过锡球4而与电路基板1的焊垫10电连接。值得一提的是，本发明的电路基板1可设有反馈电路单元(图中未绘示，主要由驱动电路、信号读取电路，及温度控制电路所构成)，用以控制微加热器2的加热温度。
进一步来说，配合图4及图5所示，每一个芯片3可为微型半导体发光元件(MicroLED)，包括呈堆叠状设置的一n型导电层N、被激光光源L穿过的发光层M以及p型导电层P，n型导电层N可为n型氮化镓材料层或n型砷化镓材料层，发光层M为多量子井结构层，p型导电层P可为p型氮化镓材料层或p型砷化镓材料层。或者，每一个芯片3也可为次毫米发光二极管(Mini LED)，包括呈堆叠状设置的基层(图中未绘示)、n型导电层N、被激光光源L穿过的发光层M以及p型导电层P，基层可为蓝宝石(sapphire)材料层，n型导电层N可为n型氮化镓材料层或n型砷化镓材料层，发光层M为多量子井结构层，p型导电层P可为p型氮化镓材料层或p型砷化镓材料层。基层120还可以是石英基底层、玻璃基底层、硅基底层或者任何材料的基底层。然而，本发明不以上述所举的例子为限。
进一步来说，配合图6所示，本发明的芯片3也可以是系统级封装(System inPackage，SiP)。举例来说，配合图1至图6所示，本发明可也通过吸附结构S2将芯片3转移到电路基板1上。接着，通过每一个微加热器2加热至少一个锡球4，或者，通过激光加热模块S3与微加热器2两者的配合加热方式，以使芯片3被固接在电路基板1，并通过锡球4而与电路基板1电连接。最后，通过半导体封装技术，将黑胶覆盖在电路基板1上(如图6中的假想线范围)。
进一步来说，配合图7所示，本发明的吸附结构S2上还可设置粘着层5，而多个芯片3可位在粘着层5上。其中，吸附结构S2可为透明材质，例如玻璃，且粘着层5可为聚醚醚酮(polyetheretherketone，PEEK)、苯并环丁烯(Benzocyclobutene，BCB)以及含氢硅酸盐(Hydrogen Silsesquioxane，HSQ)的其中一种，但不以此为限。举例来说，通过吸附结构S2上的粘着层5，可将一个或多个芯片3转移到芯片固接结构S1的电路基板1上。进一步来说，配合图6至图9所示，在每一个微加热器2对锡球4进行加热之前，还可通过激光加热模块S3朝锡球4投射激光光源L，激光加热模块S3可设置在芯片固接结构S1的上方。举例来说，激光加热模块S3所产生的激光光源L会穿过芯片3的n型导电层N、发光层M及p型导电层P，而投射在芯片固接结构S1的电路基板1上的锡球4。通过激光加热模块S3预先对锡球4进行加热，再利用微加热器2对锡球4进行加热，可大幅降低供给微加热器2的电压；即，通过激光光源L对锡球4进行预热，可使得微加热器2原先瞬间所要提升的温度预设值可大幅降低，例如，仅利用微加热器2对锡球4进行加热的情况下，微加热器2瞬间所要提升到的温度预设值为700度，而在激光光源L对锡球4进行预热的情况下，微加热器2瞬间所要提升到的温度预设值可为400度或者更低。然而，本发明不以上述所举的例子为限。
此外，本发明第一实施例还提供一种芯片固接设备Z，包括：芯片固接结构S1以及吸附结构S2。芯片固接结构S1包括电路基板1以及被电路基板1所承载的至少一个微加热器2。吸附结构S2设置在芯片固接结构S1的上方，以将至少一个芯片3吸附且转移到芯片固接结构S1。其中，至少一个芯片3被电路基板1所承载，至少一个微加热器2加热至少一个芯片3所接触的至少一个锡球4。其中，至少一个芯片3通过至少一个锡球4，以固接在电路基板1上。其中，至少一个芯片3为IC芯片或者LED芯片。进一步地，芯片固接设备Z进一步包括：激光加热模块S3，设置在芯片固接结构S1的上方，以对至少一个锡球4投射激光光源L。
然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
[第二实施例]
参阅图10至图14，并请一并参阅图1至图9，本发明第二实施例所提供的一种芯片固接结构S1，与第一实施例的芯片固接结构S1略为相近，因此，相似的结构、步骤以及作动不再赘述。而本发明第二实施例与第一实施的差异在于，本实施的芯片固接结构S1的微加热器2可以设置在相邻的两组焊垫10之间，即至少一个微加热器2设置在至少一个芯片3的其中一侧旁。
首先，配合图10所示，本发明的芯片固接结构S1包括了电路基板1以及多个微加热器2，每一个微加热器2可设置在相邻的两组焊垫10之间，但不以此为限。
接着，配合图11所示，通过设置在芯片固接结构S1上方的吸附结构S2将一个或多个的芯片3转移到芯片固接结构S1的电路基板1上。
最后，配合图12所示，通过供给电能至电路基板1上的每一个微加热器2，以使每一个微加热器2对至少一个锡球4进行加热，而使锡球4产生软化，进而与芯片3产生连接。并且，在锡球4固化后，会使得芯片3被固接在电路基板1，并通过锡球4而与电路基板1电连接。
进一步来说，配合图13所示，在每一个微加热器2对锡球4进行加热之前，还可通过激光加热模块S3朝锡球4投射激光光源L。举例来说，配合图7至图9以及图13所示，激光加热模块S3所产生的激光光源L可穿过芯片3，而投射在电路基板1上的锡球4。通过激光加热模块S3预先对锡球4进行加热，再利用微加热器2对锡球4进行加热，可大幅降低供给微加热器2的电压；即，通过激光光源L对锡球4进行预热，可使得微加热器2原先瞬间所要提升的温度预设值可大幅降低，例如，仅利用微加热器2对锡球4进行加热的情况下，微加热器2瞬间所要提升到的温度预设值为700度，而在激光光源L对锡球4进行预热的情况下，微加热器2瞬间所要提升到的温度预设值可为400度或者更低。然而，本发明不以上述所举的例子为限。
进一步来说，配合图14至图16所示，本发明的微加热器2也可设置于焊垫10的四周(如图14所示)，或者可设置在芯片3的至少两侧，例如相对的两侧(如图15或图16所示)，但不以此为限。
然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
[实施例的有益效果]
本发明的其中一有益效果在于，本发明所提供的芯片固接结构S1，能通过“电路基板1具有多个焊垫10”、“多个微加热器2设置在电路基板1上，微加热器2邻近焊垫10”以及“多个芯片3设置在电路基板1上，芯片3通过锡球4而电连接于焊垫10”的技术方案，以提升工艺的焊接良率。
本发明的另外一有益效果在于，本发明所提供的芯片固接结构S1，能通过“电路基板1承载至少一个芯片3”以及“至少一个微加热器2被电路基板1所承载，以加热至少一个芯片3所接触的至少一个锡球4”的技术方案，以提升工艺的焊接良率。
本发明的另外再一有益效果在于，本发明所提供的芯片固接设备Z，能通过“芯片固接结构S1包括一电路基板1以及被电路基板1所承载的至少一个微加热器2”、“吸附结构2设置在芯片固接结构S1的上方，以将至少一个芯片3吸附且转移到芯片固接结构S1”以及“至少一个芯片3被电路基板1所承载，至少一个微加热器2加热至少一个芯片3所接触的至少一个锡球4”的技术方案，以提升工艺的焊接良率。
进一步来说，本发明所提供的芯片固接结构S1及芯片固接设备Z通过上述各实施例的技术方案，利用芯片固接结构S1上的微加热器2对电路基板1上的锡球4进行加热，以提升工艺的焊接良率。此外，本发明进一步可配合激光加热模块S3所产生的激光光源L对锡球4进行预热，可使得微加热器2原先瞬间所要提升到达的目标温度预设值能大幅降低。
以上所公开的内容仅为本发明的优选可行实施例，并非因此局限本发明的权利要求书的保护范围，所以凡是运用本发明说明书及附图内容所做的等效技术变化，均包含于本发明的权利要求书的保护范围内。

Claims (10)

1.一种芯片固接结构，其特征在于，包括：
电路基板，具有多个焊垫；以及
多个微加热器，设置在所述电路基板上，所述微加热器邻近所述焊垫；
其中，多个芯片设置在所述电路基板上，所述芯片通过至少一个锡球而电连接于所述焊垫。
2.根据权利要求1所述的芯片固接结构，其特征在于，所述电路基板为单一基板或是复合式基板。
3.根据权利要求1所述的芯片固接结构，其特征在于，所述多个芯片分别对应地设置在所述多个微加热器的上方，且所述芯片为IC芯片或者LED芯片。
4.根据权利要求1所述的芯片固接结构，其特征在于，所述微加热器对至少一个所述锡球进行加热。
5.一种芯片固接结构，其特征在于，包括：
电路基板，承载至少一个芯片；以及
至少一个微加热器，被所述电路基板所承载，以加热至少一个所述芯片所接触的至少一个锡球。
6.根据权利要求5所述的芯片固接结构，其特征在于，至少一个所述芯片通过至少一个所述锡球，以固接在所述电路基板上且脱离所述电路基板的承载。
7.根据权利要求5所述的芯片固接结构，其特征在于，至少一个所述微加热器设置在至少一个所述芯片的其中一侧旁。
8.一种芯片固接设备，其特征在于，包括：
芯片固接结构，包括电路基板以及被所述电路基板所承载的至少一个微加热器；以及
吸附结构，设置在所述芯片固接结构的上方，以将至少一个芯片吸附且转移到所述芯片固接结构；
其中，至少一个所述芯片被所述电路基板所承载，至少一个所述微加热器加热至少一个所述芯片所接触的至少一个锡球。
9.根据权利要求8所述的芯片固接设备，其特征在于，至少一个所述芯片通过至少一个所述锡球，以固接在电路基板上；其中，至少一个所述芯片为IC芯片或者LED芯片；其中，所述吸附结构为真空吸嘴模块或者静电吸附模块。
10.根据权利要求8所述的芯片固接设备，其特征在于，所述芯片固接设备进一步包括：激光加热模块，设置在所述芯片固接结构的上方，以对至少一个所述锡球投射激光光源。
CN201910327526.3A 2019-03-15 2019-04-23 芯片固接结构及芯片固接设备 Pending CN111696932A (zh)

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