CN111668171B - 芯片承载结构及芯片承载设备 - Google Patents

芯片承载结构及芯片承载设备 Download PDF

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CN111668171B
CN111668171B CN201910329373.6A CN201910329373A CN111668171B CN 111668171 B CN111668171 B CN 111668171B CN 201910329373 A CN201910329373 A CN 201910329373A CN 111668171 B CN111668171 B CN 111668171B
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circuit substrate
chips
heaters
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CN111668171A (zh
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廖建硕
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Asti Global Inc Taiwan
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Abstract

本发明公开了一种芯片承载结构及芯片承载设备。芯片承载结构包括：非电路基板、多个微加热器以及粘着层。多个微加热器设置在所述非电路基板上。粘着层设置在所述多个微加热器上，多个芯片设置在所述粘着层上。借此，本发明通过一种芯片承载结构及芯片承载设备，来提升工艺的焊接良率。

Description

芯片承载结构及芯片承载设备
技术领域
本发明涉及一种承载结构及承载设备，特别是涉及一种芯片承载结构及芯片承载设备。
背景技术
近年来，随着电子及半导体技术的日新月异，使得电子产品不断地推陈出新，并朝向轻、薄、短、小的趋势设计。而电路板广泛地使用于各种电子设备当中。电路板表面上通常具有多个焊接垫，在工艺中将焊料形成于电路板的焊接垫上，接着利用回焊处理将各种电子零件固定于电路板上，而各个电子零件通过电路板内的线路层彼此电连接。
目前回焊处理可以用回焊炉、红外加热灯或热风枪等不同加温方式来进行焊接。虽然上述回焊处理的加温方法大致符合使用上的需求，但仍有需要对工艺进行改良，以提高工艺的良率及效能，并降低生产成本。
发明内容
本发明所要解决的技术问题在于，针对现有技术的不足提供一种芯片承载结构及芯片承载设备。
为了解决上述的技术问题，本发明所采用的其中一技术方案是，提供一种芯片承载结构，包括：非电路基板、多个微加热器以及粘着层。多个微加热器设置在所述非电路基板上。粘着层设置在所述多个微加热器上，多个芯片设置在所述粘着层上。
优选地，所述非电路基板为单一基板或是复合式基板。
优选地，所述多个芯片分别对应地设置在所述多个微加热器的上方，且所述芯片为IC芯片或者LED芯片。
优选地，每一个所述微加热器对所述多个芯片之中的至少一个进行加热，使得所述芯片通过锡球而固接在电路基板上且脱离所述粘着层。
为了解决上述的技术问题，本发明所采用的另外一技术方案是，提供一种芯片承载结构，包括：非电路基板以及至少一个微加热器。非电路基板承载至少一个芯片。至少一个微加热器被所述非电路基板所承载，以加热至少一个所述芯片所接触的至少一个锡球。
优选地，至少一个所述芯片通过至少一个所述锡球，以固接在电路基板上且脱离所述非电路基板的承载。
优选地，至少一个所述芯片为IC芯片或者LED芯片，所述非电路基板为玻璃、石英、蓝宝石、陶瓷或者晶圆。
为了解决上述的技术问题，本发明所采用的另外一技术方案是，提供一种芯片承载设备，包括：芯片承载结构以及吸附结构。芯片承载结构包括非电路基板以及被所述非电路基板所承载的至少一个微加热器。吸附结构设置在所述芯片承载结构的上方，以将至少一个芯片吸附且转移到所述芯片承载结构。其中，至少一个所述芯片被所述非电路基板所承载，至少一个所述微加热器加热至少一个所述芯片所接触的至少一个锡球。
优选地，至少一个所述芯片通过至少一个所述锡球，以固接在电路基板上且脱离所述非电路基板的承载；其中，至少一个所述芯片为IC芯片或者LED芯片，所述非电路基板为玻璃、石英、蓝宝石、陶瓷或者晶圆；其中，所述吸附结构为真空吸嘴模块或者静电吸附模块。
优选地，所述芯片承载设备还进一步包括：激光加热模块，设置在所述芯片承载结构的上方，以对至少一个所述锡球投射激光光源。
本发明的其中一有益效果在于，本发明所提供的芯片承载结构，能通过“多个微加热器设置在所述非电路基板上”以及“粘着层设置在所述多个微加热器上，多个芯片设置在所述粘着层上”的技术方案，以提升工艺的焊接良率。
本发明的另外一有益效果在于，本发明所提供的芯片承载结构，能通过“非电路基板承载至少一个芯片”以及“至少一个微加热器被所述非电路基板所承载，以加热至少一个所述芯片所接触的至少一个锡球”的技术方案，以提升工艺的焊接良率。
本发明的另外又一有益效果在于，本发明所提供的芯片承载设备，能通过“芯片承载结构包括非电路基板以及被所述非电路基板所承载的至少一个微加热器”、“吸附结构设置在所述芯片承载结构的上方，以将至少一个芯片吸附且转移到所述芯片承载结构”以及“至少一个所述芯片被所述非电路基板所承载，至少一个所述微加热器加热至少一个所述芯片所接触的至少一个锡球”的技术方案，以提升工艺的焊接良率。
为使能更进一步了解本发明的特征及技术内容，请参阅以下有关本发明的详细说明与附图，然而所提供的附图仅用于提供参考与说明，并非用来对本发明加以限制。
附图说明
图1为本发明第一实施例的芯片承载结构的第一实施示意图。
图2为本发明第一实施例的芯片承载结构的第二实施示意图。
图3为本发明第一实施例的芯片承载结构的第三实施示意图。
图4为本发明第一实施例的芯片承载结构的第四实施示意图。
图5为图4中V部分的放大示意图。
图6为本发明第一实施例的芯片承载结构的第五实施示意图。
图7为本发明第一实施例的芯片承载结构的第六实施示意图。
图8为本发明第一实施例的芯片承载结构的第七实施示意图。
图9为本发明第一实施例的芯片承载结构的第八实施示意图。
图10为本发明第二实施例的芯片承载设备的前视示意图。
图11为本发明第二实施例的芯片承载结构的第一实施示意图。
图12为本发明第二实施例的芯片承载结构的第二实施示意图。
图13为本发明第二实施例的芯片承载结构的第三实施示意图。
图14为本发明第二实施例的芯片承载结构的微加热器与芯片的结构示意图。
具体实施方式
以下是通过特定的具体实施例来说明本发明所公开有关“芯片承载结构及芯片承载设备”的实施方式，本领域技术人员可由本说明书所公开的内容了解本发明的优点与效果。本发明可通过其他不同的具体实施例加以施行或应用，本说明书中的各项细节也可基于不同观点与应用，在不脱离本发明的构思下进行各种修改与变更。另外，本发明的附图仅为简单示意说明，并非依实际尺寸的描绘，事先声明。以下的实施方式将进一步详细说明本发明的相关技术内容，但所公开的内容并非用以限制本发明的保护范围。
应当可以理解的是，虽然本文中可能会使用到“第一”、“第二”、“第三”等术语来描述各种元件，但这多个元件不应受这多个术语的限制。这多个术语主要是用以区分一元件与另一元件。另外，本文中所使用的术语“或”，应视实际情况可能包括相关联的列出项目中的任一个或者多个的组合。
[第一实施例]
参阅图1至图9所示，本发明第一实施例提供一种芯片承载结构S1，包括：非电路基板1、多个微加热器2以及粘着层3。多个微加热器2设置在非电路基板1上。粘着层3设置在所述多个微加热器2上，多个芯片4设置在粘着层3上。
首先，配合图1所示，本发明的芯片承载结构S1包括了非电路基板1、多个微加热器2以及粘着层3。非电路基板1可为单一基板或是复合式基板，例如单一基板可为玻璃、石英、蓝宝石、陶瓷或者晶圆，但不以此为限。非电路基板1间隔设置了多个微加热器2；其中，多个微加热器2可以串联或并联等方式设置，并与一供电端(例如市电或主机，但不以此为限)电连接，且微加热器2可设置于非电路基板1的表面，或嵌设于非电路基板1中，但不以此为限。非电路基板1上还设置了粘着层3，覆盖了多个微加热器2。而多个芯片4则分别对应其中一微加热器2而位于粘着层3上，即所述多个芯片4分别对应地设置在所述多个微加热器2的上方，且芯片4可为IC芯片或者LED芯片，但不以此为限。其中，粘着层3可为聚醚醚酮(polyetheretherketone，PEEK)、苯并环丁烯(Benzocyclobutene，BCB)以及含氢硅酸盐(Hydrogen Silsesquioxane，HSQ)的其中一种，但不以此为限。
接着，配合图2所示，提供电路基板6，电路基板6还包括多个导电焊垫60。每一个导电焊垫60上可以设置至少一个锡球5，或是其他型体且具有导电性的材料。进一步来说，非电路基板1设置有多个芯片4的一面可朝向电路基板6设置有多个导电焊垫60的一面，并朝电路基板6趋近。其中，本发明可通过取放模块(图中未示出，可例如真空吸嘴或者任何种类的取放机器(pick and place machine))驱使非电路基板1朝电路基板6趋近，而使芯片4对应在两个锡球5上。然而，本发明不以上述所举的例子为限。
最后，配合图3所示，每一个微加热器2对所述多个芯片4之中的至少一个进行加热，使得芯片4通过锡球5而固接在电路基板6上且脱离粘着层3。举例来说，每一个芯片4都设置在两个锡球5上。在供给电能至多个微加热器2后，每一个微加热器2对所对应的芯片4进行加热，以通过芯片4对锡球5加热，而使锡球5产生软化，进而与芯片4产生连接。接着，在锡球5固化后，会使得芯片4被固接在电路基板6，并通过锡球5而与电路基板6电连接，且芯片4会脱离非电路基板1的承载。值得一提的是，本发明的非电路基板1可设有回授电路单元(图中未示出，主要由驱动电路、信号读取电路，及温度控制电路所构成)，用以控制微加热器2的加热温度。
进一步来说，配合图4及图5所示，每一个芯片4可为微型半导体发光元件(MicroLED)，包括呈堆叠状设置的n型导电层N、可被激光光源L穿过的发光层M以及p型导电层P，n型导电层N可为n型氮化镓材料层或n型砷化镓材料层，发光层M为多量子阱结构层，p型导电层P可为p型氮化镓材料层或p型砷化镓材料层。或者，每一个芯片4也可为次毫米发光二极管(Mini LED)，包括呈堆叠状设置的基底层(图中未示出)、n型导电层N、被激光光源穿过的发光层M以及p型导电层P，基底层可为蓝宝石(sapphire)材料层，n型导电层N可为n型氮化镓材料层或n型砷化镓材料层，发光层M为多量子阱结构层，p型导电层P可为p型氮化镓材料层或p型砷化镓材料层。基底层还可以是石英基底层、玻璃基底层、硅基底层或者任何材料的基底层。然而，本发明不以上述所举的例子为限。
更进一步来说，配合图6及图7所示，在每一个微加热器2对所对应的芯片4进行加热之前，还可通过激光加热模块S2朝锡球5投射激光光源L。举例来说，激光加热模块S2所产生的激光光源L会穿过芯片4的n型导电层N、发光层M及p型导电层P，而投射在电路基板6上的锡球5。通过激光加热模块S2预先对锡球5进行加热，再利用微加热器2对锡球5进行加热，可大幅降低供给微加热器2的电压；即，通过激光光源L对锡球5进行预热，可使得微加热器2原先瞬间所要提升的温度预设值可大幅降低，例如，仅利用微加热器2对锡球5进行加热的情况下，微加热器2瞬间所要提升到的温度预设值为700度，而在激光光源L对锡球5进行预热的情况下，微加热器2瞬间所要提升到的温度预设值可为400度或者更低。然而，本发明不以上述所举的例子为限。
更进一步来说，配合图8及图9所示，本发明可通过设置在芯片承载结构S1上方的吸附结构S3，以将至少一个芯片4吸附且转移到芯片承载结构S1。举例来说，本发明可先通过吸附结构S3(可为真空吸嘴模块或者静电吸附模块，但不以此为限)使用相反电荷的吸力吸附一个或多个芯片4；其中，在本实施例中以静电吸附模块作为示例，但不以此为限。接着，通过吸附结构S3将芯片4放置于芯片承载结构S1上。最后，吸附结构S3取消相反电荷的吸力而使芯片4连接在芯片承载结构S1上。
然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
[第二实施例]
参阅图10至图14，并请一并参阅图1至图9，本发明第二实施例所提供的一种芯片承载结构S1，与第一实施例的芯片承载结构S1略为相近，因此，相似的结构、步骤以及动作不再赘述。而本发明第二实施例与第一实施的差异在于，本实施的芯片承载结构S1包括了非电路基板1以及至少一个微加热器2。非电路基板1承载至少一个芯片4。至少一个微加热器2被非电路基板1所承载，以加热至少一个芯片4所接触的至少一个锡球5。
举例来说，配合图10所示，本发明可通过设置在芯片承载结构S1上方的吸附结构S3，以相反电荷的吸力吸附一个或多个芯片4；接着，通过吸附结构S3将芯片4放置于芯片承载结构S1上，并取消相反电荷的吸力，而使芯片4连接在芯片承载结构S1上。进一步来说，非电路基板1间隔设置了多个微加热器2，部分的微加热器2位于相邻的两个芯片4之间，另一部分的微加热器2位于芯片4的侧边。其中，微加热器2可不覆盖粘着层3，但不以此为限。
接着，配合图11所示，将非电路基板1设置有多个芯片4的一面朝向电路基板6设置有多个导电焊垫60的一面，并朝电路基板6趋近。每一个导电焊垫60上可以设置至少一个锡球5，或是其他型体且具有导电性的材料。
最后，配合图12所示，通过供给电能至非电路基板1上的每一个微加热器2，以使每一个微加热器2对所述多个芯片4之中的至少一个进行加热，以间接加热至少一个芯片4所接触的锡球5，而使锡球5产生软化，进而与芯片4产生连接。在锡球5固化后，会使得芯片4被固接在电路基板6，并通过锡球5而与电路基板6电连接，且芯片4会脱离非电路基板1的承载。
更进一步来说，配合图13所示，在每一个微加热器2对所对应的芯片4进行加热之前，还可通过激光加热模块S2朝锡球5投射激光光源L。举例来说，激光加热模块S2所产生的激光光源L会穿过芯片4，而投射在电路基板6上的锡球5。通过激光加热模块S2预先对锡球5进行加热，再利用微加热器2对锡球5进行加热，可大幅降低供给微加热器2的电压；即，通过激光光源L对锡球5进行预热，可使得微加热器2原先瞬间所要提升的温度预设值可大幅降低，例如，仅利用微加热器2对锡球5进行加热的情况下，微加热器2瞬间所要提升到的温度预设值为700度，而在激光光源L对锡球5进行预热的情况下，微加热器2瞬间所要提升到的温度预设值可为400度或者更低。然而，本发明不以上述所举的例子为限。
更进一步来说，配合图14所示，本发明的微加热器2可设置于芯片4的四周，也可以设置在芯片4的至少两侧，例如相对的两侧，但不以此为限。
此外，配合图10至图14所示，本发明还提供一种芯片承载设备Z，包括：芯片承载结构S1以及吸附结构S3。芯片承载结构S1包括非电路基板1以及被非电路基板1所承载的至少一个微加热器2。吸附结构S3设置在芯片承载结构S1的上方，以将至少一个芯片4吸附且转移到芯片承载结构S1。其中，至少一个芯片4被非电路基板1所承载，至少一个微加热器2加热至少一个芯片4所接触的至少一个锡球5。
然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
[实施例的有益效果]
本发明的其中一有益效果在于，本发明所提供的芯片承载结构，能通过“多个微加热器2设置在非电路基板1上”以及“粘着层3设置在所述多个微加热器2上，多个芯片4设置在粘着层3上”的技术方案，以提升工艺的焊接良率。
本发明的另外一有益效果在于，本发明所提供的芯片承载结构，能通过“非电路基板1承载至少一个芯片4”以及“至少一个微加热器2被非电路基板1所承载，以加热至少一个芯片4所接触的至少一个锡球5”的技术方案，以提升工艺的焊接良率。
本发明的另外一有益效果在于，本发明所提供的芯片承载设备，能通过“芯片承载结构S1包括非电路基板1以及被非电路基板1所承载的至少一个微加热器2”、“吸附结构S3设置在芯片承载结构S1的上方，以将至少一个芯片4吸附且转移到芯片承载结构S1”以及“至少一个芯片4被非电路基板1所承载，至少一个微加热器2加热至少一个芯片4所接触的至少一个锡球5”的技术方案，以提升工艺的焊接良率。
更进一步来说，本发明所提供的芯片承载结构S1及芯片承载设备Z通过上述各实施例的技术方案，利用芯片承载结构S1上的微加热器2对电路基板6上的锡球5进行加热，以提升工艺的焊接良率。此外，本发明进一步还可配合激光加热模块S2所产生的激光光源L对锡球5进行预热，可使得微加热器2原先瞬间所要提升到达的目标温度预设值能大幅降低。
以上所公开的内容仅为本发明的优选可行实施例，并非因此局限本发明的权利要求书的保护范围，所以凡是运用本发明说明书及附图内容所做的等效技术变化，均包含于本发明的权利要求书的保护范围内。

Claims (4)

1.一种芯片承载结构，其特征在于，包括：
非电路基板；
多个间隔的微加热器，设置在所述非电路基板上；以及
粘着层，设置在所述多个间隔的微加热器上，多个芯片设置在所述粘着层上，其中所述多个间隔的微加热器、所述粘着层与所述多个芯片设置在所述非电路基板的相同侧。
2.根据权利要求1所述的芯片承载结构，其特征在于，所述非电路基板为单一基板或是复合式基板。
3.根据权利要求1所述的芯片承载结构，其特征在于，所述多个芯片分别对应地设置在所述多个间隔的微加热器的上方，且所述芯片为IC芯片或者LED芯片。
4.根据权利要求1所述的芯片承载结构，其特征在于，每一个所述微加热器对所述多个芯片之中的至少一个进行加热，使得所述芯片通过锡球而固接在电路基板上且脱离所述粘着层。
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