TWI693119B - 應用於固接led的雷射加熱裝置 - Google Patents

應用於固接led的雷射加熱裝置 Download PDF

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TWI693119B
TWI693119B TW108107398A TW108107398A TWI693119B TW I693119 B TWI693119 B TW I693119B TW 108107398 A TW108107398 A TW 108107398A TW 108107398 A TW108107398 A TW 108107398A TW I693119 B TWI693119 B TW I693119B
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laser light
light source
emitting diode
irradiation range
laser
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TW108107398A
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TW202033300A (zh
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廖建碩
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台灣愛司帝科技股份有限公司
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Priority to TW108107398A priority Critical patent/TWI693119B/zh
Priority to CN201910203644.3A priority patent/CN111668132A/zh
Priority to US16/559,728 priority patent/US20200287352A1/en
Application granted granted Critical
Publication of TWI693119B publication Critical patent/TWI693119B/zh
Publication of TW202033300A publication Critical patent/TW202033300A/zh
Priority to US17/984,263 priority patent/US12051887B2/en

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Abstract

本發明公開一種應用於固接LED的雷射加熱裝置，其包括：一承載基板、一光學模組以及一雷射光產生模組。承載基板用於承載一電路基板，電路基板包括多個導電焊墊、多個導電體以及多個發光二極體晶片，該些導電體分別設置在該些導電焊墊上，每一個發光二極體晶片設置在相對應的至少兩個導電體上。光學模組設置在承載基板的上方。雷射光產生模組鄰近光學模組，以提供具有一第一預定照射範圍的一雷射光源。其中，導電體通過雷射光源的照射，以固接發光二極體晶片，雷射光源的第一預定照射範圍通過光學模組的光學調整而形成一第二預定照射範圍，第一預定照射範圍大於、小於或者等於第二預定照射範圍。藉此，導電體能夠受到穿過發光二極體晶片的雷射光源的照射而固化，而使得發光二極體晶片被固接在電路基板上。

Description

應用於固接LED的雷射加熱裝置
本發明涉及一種雷射加熱裝置，特別是涉及一種應用於固接LED的雷射加熱裝置。
目前，發光二極體(Light-Emitting Diode，LED)因具備光質佳以及發光效率高等特性而得到廣泛的應用。一般來說，為了使採用發光二極體做為發光元件的顯示裝置具有較佳的色彩表現能力，現有技術是利用紅、綠、藍三種顏色的發光二極體晶片的相互搭配而組成一全彩發光二極體顯示裝置，此全彩發光二極體顯示裝置可通過紅、綠、藍三種顏色的發光二極體晶片分別發出的紅、綠、藍三種的顏色光，然後再通過混光後形成一全彩色光，以進行相關資訊的顯示。然而，在現有技術中，將發光二極體晶片固定在電路基板上的製程中，都需要先將承載發光二極體晶片的基板先行移除。
本發明所要解決的技術問題在於，針對現有技術的不足提供一種應用於固接LED的雷射加熱裝置。
為了解決上述的技術問題，本發明所採用的其中一技術方案是，提供一種應用於固接LED的雷射加熱裝置，其包括：一承載基板、一光 學模組以及一雷射光產生模組。承載基板用於承載一電路基板，該電路基板包括多個導電焊墊、多個導電體以及多個發光二極體晶片，該些導電體分別設置在該些導電焊墊上，每一該發光二極體晶片設置在相對應的至少兩個該導電體上。光學模組設置在該承載基板的上方。雷射光產生模組鄰近該光學模組，以提供具有一第一預定照射範圍的一雷射光源。其中，該導電體通過該雷射光源的照射，以固接該發光二極體晶片，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍，該第一預定照射範圍大於、小於或者等於該第二預定照射範圍。
為了解決上述的技術問題，本發明所採用的另外一技術方案是，提供一種應用於固接LED的雷射加熱裝置，其包括：一承載基板、一光學模組以及一雷射光產生模組。承載基板用於承載多個導電體以及多個發光二極體晶片。光學模組設置在該承載基板的上方。雷射光產生模組鄰近該光學模組，以提供具有一第一預定照射範圍的一雷射光源。其中，該導電體通過該雷射光源的照射，以固接該發光二極體晶片，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍，該第一預定照射範圍大於、小於或者等於該第二預定照射範圍。
為了解決上述的技術問題，本發明所採用的另外再一技術方案是，提供一種應用於固接LED的雷射加熱裝置，其包括：一承載基板、一光學模組、一雷射光產生模組、一溫控模組以及一控制模組。承載基板用於承載多個導電體。光學模組設置在該承載基板的上方。雷射光產生模組鄰近該光學模組，以提供具有一第一預定照射範圍的一雷射光源。溫控模組鄰近該承載基板，以用於偵測該導電體的溫度，而得到一導電體溫度資訊。控制模組電性連接於該溫控模組與該雷射光產生模組之間。其中，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍， 該第一預定照射範圍大於、小於或者等於該第二預定照射範圍，該第一預定照射範圍與該第二預定照射範圍具有相同或者相異的形狀。其中，該控制模組依據該導電體溫度資訊，以調整該雷射光產生模組所輸出的功率大小。
本發明的有益效果在於，本發明所提供的應用於固接LED的雷射加熱裝置，其能通過“應用於固接LED的雷射加熱裝置包括：一承載基板、一光學模組以及一雷射光產生模組”、“光學模組設置在該承載基板的上方”、“雷射光產生模組鄰近該光學模組，以提供具有一第一預定照射範圍的一雷射光源”以及“該導電體通過該雷射光源的照射，以固接該發光二極體晶片，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍，該第一預定照射範圍大於、小於或者等於該第二預定照射範圍”的技術方案，以使得該發光二極體晶片被固接在一電路基板上。
為使能更進一步瞭解本發明的特徵及技術內容，請參閱以下有關本發明的詳細說明與圖式，然而所提供的圖式僅用於提供參考與說明，並非用來對本發明加以限制。
Z:雷射加熱裝置
10:電路基板
100:導電焊墊
101:導電體
102:發光二極體晶片
1020:基層
N:n型導電層
M:發光層
P:p型導電層
F:接觸介面
M1:承載基板
M2:光學模組
L:雷射光源
R1:第一預定照射範圍
R2:第二預定照射範圍
M3:雷射光產生模組
M4:晶片取放模組
M5:溫控模組
M6:控制模組
圖1為本發明第一實施例的應用於固接LED的雷射加熱裝置的第一運作示意圖。
圖2為本發明第一實施例的應用於固接LED的雷射加熱裝置的第二運作示意圖。
圖3為本發明第一實施例的應用於固接LED的雷射加熱裝置的第三運作示意圖。
圖4為本發明第一實施例的應用於固接LED的雷射加熱裝置的第四運作示意圖。
圖5為本發明第一實施例的應用於固接LED的雷射加熱裝置的第五運作示意圖。
圖6為圖5中VI部分的放大示意圖。
圖7為本發明第一實施例的雷射光源的第二預定照射範圍的照射示意圖。
圖8為本發明第一實施例的應用於固接LED的雷射加熱裝置的第六運作示意圖。
圖9為本發明第一實施例的應用於固接LED的雷射加熱裝置的第七運作示意圖。
圖10為本發明第一實施例的應用於固接LED的雷射加熱裝置的第八運作示意圖。
圖11為本發明第二實施例的應用於固接LED的雷射加熱裝置的第一運作示意圖。
圖12為本發明第二實施例的應用於固接LED的雷射加熱裝置的第二運作示意圖。
圖13為本發明第三實施例的應用於固接LED的雷射加熱裝置的部份模組的結構示意圖。
圖14為本發明第三實施例的應用於固接LED的雷射加熱裝置的功能方塊示意圖。
圖15為本發明第四實施例的應用於固接LED的雷射加熱裝置的第一運作示意圖。
圖16為本發明第四實施例的應用於固接LED的雷射加熱裝置的第二運作示意圖。
以下是通過特定的具體實施例來說明本發明所公開有關“應用於固接LED的雷射加熱裝置”的實施方式，本領域技術人員可由本說明書所公開的內容瞭解本發明的優點與效果。本發明可通過其他不同的具體實施例加以施行或應用，本說明書中的各項細節也可基於不同觀點與應用，在不悖離本發明的構思下進行各種修改與變更。另外，本發明的附圖僅為簡單示意說明，並非依實際尺寸的描繪，事先聲明。以下的實施方式將進一步詳細說明本發明的相關技術內容，但所公開的內容並非用以限制本發明的保護範圍。
應當可以理解的是，雖然本文中可能會使用到“第一”、“第二”、“第三”等術語來描述各種元件或者信號，但這些元件或者信號不應受這些術語的限制。這些術語主要是用以區分一元件與另一元件，或者一信號與另一信號。另外，本文中所使用的術語“或”，應視實際情況可能包括相關聯的列出項目中的任一個或者多個的組合。
[第一實施例]
參閱圖1至圖10所示，並請一併配合圖14，本發明第一實施例提供一種應用於固接LED的雷射加熱裝置Z，其包括：一承載基板M1、一光學模組M2以及一雷射光產生模組M3。
首先，配合圖1與圖2所示，承載基板M1上承載一電路基板10，承載基板M1可為具備位移功能的載台設備，但不以此為限。電路基板10包括多個導電焊墊100、多個導電體101以及多個發光二極體晶片102，多個導電體101分別設置在該些導電焊墊100上；舉例來說，每一個導電焊墊100上可以設置至少一個導電體101，且導電體101可為錫球，或是其他型體且具導電性的材料，但不以此為限。而多個發光二極體晶片102設置在電路基板10上，每一個發光二極體晶片102設置在至少兩個導電體101上。
進一步來說，配合圖3所示，本發明所提供的應用於固接LED的雷射加熱裝置Z，還進一步包括：一晶片取放模組M4，其鄰近承載基板M1，以用於將每一個發光二極體晶片102放置在相對應的至少兩個導電體101上。舉例來說，本發明還可通過晶片取放模組M4將多個發光二極體晶片102放置在電路基板10上，並且每一個發光二極體晶片102對應在至少兩個導電體101上。其中，晶片取放模組M4可以是真空吸嘴或者任何種類的取放機器(pick and place machine)。然而，本發明不以上述所舉的例子為限。
光學模組M2設置在承載基板M1的上方，並位於雷射光產生模組M3與電路基板10之間，光學模組M2可為透鏡結構或導光板結構，但不以此為限。雷射光產生模組M3可提供具有一第一預定照射範圍R1的一雷射光源L，並投向光學模組M2。而在雷射光源L的第一預定照射範圍R1通過光學模組M2的光學調整而形成第二預定照射範圍R2；其中，第一預定照射範圍R1可大於、小於或者等於第二預定照射範圍R2，於本實施例中，以第一預定照射範圍R1可小於第二預定照射範圍R2作為示例，但不以此為限。並且，第一預定照射範圍R1與第二預定照射範圍R2可具有相同或者相異的形狀。
進一步來說，配合圖4至圖7所示，第二預定照射範圍R2的雷射光源L投向每一個發光二極體晶片102時，會穿過發光二極體晶片102的n型導電層N、發光層M及p型導電層P，進而投射在電路基板10的至少兩個導電體101上；其中，雷射光產生模組M3所產生的雷射光源L穿過發光二極體晶片120，以投向導電體101與電路基板10。進一步來說，配合圖6所示，每一個發光二極體晶片102可為微型半導體發光元件(Micro LED)，其包括呈堆疊狀設置的一n型導電層N、一被雷射光源L穿過的發光層M以及一p型導電層P，n型導電層N可為n型氮化鎵材料層或n型砷化鎵材料層，發光層M為多量子井結構層，p型導電層P可為p型氮化鎵材料層或p型砷化鎵材料層，但不以此為限。 然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
更進一步來說，配合圖7所示，雷射光源L的第二預定照射範圍R2可涵蓋多個發光二極體晶片102，例如，第二預定照射範圍R2可涵蓋4X4個發光二極體晶片102，但不以此為限。並且，本發明還可透過調整雷射光產生模組M3的雷射光源L的強度3，使得雷射光產生模組M3所產生的雷射光源L3只穿過發光二極體晶片102，而不會穿過電路基板10。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
最後，配合圖6及圖8所示，設置在發光二極體晶片102與電路基板10之間的導電體101通過雷射光源L的照射而固化，以使得發光二極體晶片102被固接在電路基板10上。舉例來說，設置在發光二極體晶片102與電路基板10之間的導電體101受到雷射光源L的照射時，會產生軟化，而與發光二極體晶片102產生連接。接著，在導電體101固化後，使得發光二極體晶片102被固接在電路基板10，並通過導電體101而與電路基板10電性連接。然而，本發明不以上述所舉的例子為限。
此外，進一步配合圖9至圖10所示，本發明所提供的應用於固接LED的雷射加熱裝置Z還進一步可將雷射光產生模組M3所產生的雷射光源L投向發光二極體晶片102與導電體101的接觸介面F，而降低發光二極體晶片102與導電體101之間的連接強度，以使得發光二極體晶片102容易脫離導電體101而從電路基板10上取下。舉例來說，本發明還可通過雷射光產生模組M3所產生的雷射光源L投向發光二極體晶片102與已固化的導電體101之間的接觸介面F，以使靠近接觸介面F的部分導電體101軟化，而降低發光二極體晶片102與導電體101之間的連接強度、結合力，進而使得發光二極體晶片102可容易脫離導電體101而從電路基板10上取下。然後，可利用特殊器具(例如刮除器或研磨器)將與發光二極體晶片102分離的至少兩個舊的導電體101從電路 基板10上取下，以利之後可重新安置新的導電體101。然而，本發明不以上述所舉的例子為限。
更進一步地，配合圖1至圖10所示，本發明還可提供一種應用於固接LED的雷射加熱裝置Z，其包括：一電路基板10、一光學模組M2以及一雷射光產生模組M3。電路基板10用於承載多個導電體101以及多個發光二極體晶片102。光學模組M2設置在電路基板10的上方。雷射光產生模組M3鄰近光學模組M2，以提供具有一第一預定照射範圍R1的一雷射光源L。其中，導電體101通過雷射光源L的照射，以固接發光二極體晶片102，雷射光源L的第一預定照射範圍R1通過光學模組M2的光學調整而形成一第二預定照射範圍R2，第一預定照射範圍R1大於、小於或者等於第二預定照射範圍R2。
值得注意的是，上述實施態樣中，用於使導電體101與發光二極體晶片102接合的雷射光源L與用於降低導電體11結合力的雷射光源L的波長可彼此不同或相同。
[第二實施例]
參閱圖11及圖12所示，並請一併配合圖1至圖10，本發明第二實施例所提供的一種應用於固接LED的雷射加熱裝置Z，與第一實施例的應用於固接LED的雷射加熱裝置Z相似，因此，相似的作動方式不再贅述。進一步來說，配合圖6，並根據圖11、圖12與圖5、圖8比較所示，本發明第二實施例與第一實施的差異在於，本實施的每一個發光二極體晶片102可為次毫米發光二極體(Mini LED)，其包括呈堆疊狀設置的一基層1020、一n型導電層N、一被雷射光源L穿過的發光層M以及一p型導電層P，基層1020為藍寶石(sapphire)材料層，n型導電層N可為n型氮化鎵材料層或n型砷化鎵材料層，發光層M為多量子井結構層，p型導電層P可為p型氮化鎵材料層或p型砷化鎵材料層，但不以此為限。基層1020還可以是石英基底層、玻璃基底層、矽基 底層或者任何材料的基底層。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
舉例來說，第二預定照射範圍R2的雷射光源L投向每一個發光二極體晶片102時，會穿過基層1020、n型導電層N、發光層M及p型導電層P，進而投射在電路基板10的至少兩個導電體101上。接著，設置在發光二極體晶片102與電路基板10之間的導電體101通過雷射光源L的照射而固化，以使得發光二極體晶片102被固接在電路基板10上。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
[第三實施例]
參閱圖13及圖14所示，並請一併配合圖1至圖12，本發明第三實施例所提供的一種應用於固接LED的雷射加熱裝置Z，與第一實施例的應用於固接LED的雷射加熱裝置Z相似，因此，相似的作動方式不再贅述。進一步來說，本發明第三實施例與第一實施的差異在於，本發明所提供的應用於固接LED的雷射加熱裝置Z還進一步包括：一溫控模組M5以及一控制模組M6。溫控模組M5鄰近承載基板M1，以用於偵測導電體101的溫度，而得到一導電體溫度資訊。控制模組M6電性連接於溫控模組M5與雷射光產生模組M3之間。其中，控制模組M6依據導電體溫度資訊，以調整雷射光產生模組M3所輸出的功率大小。
舉例來說，溫控模組M5可為溫度感測器或者溫度控制器，但不以此為限。溫控模組M5的感測端可穿設於承載基板M1中，並鄰近於電路基板10，或者溫控模組M5的感測端可位於承載基板M1的外部，並鄰近於電路基板10上的其中一或部分的導電體101。並且，控制模組M6電性連接於承載基板M1、雷射光產生模組M3、晶片取放模組M4以及溫控模組M5。因此，在雷射光源L投射到電路基板10上的導電體101的同時或者之後，可通過溫控模組M5 偵測導電體101的溫度，而得到一導電體溫度資訊。接著，控制模組M6可根據導電體溫度資訊而判讀雷射光產生模組M3所輸出的功率是否足夠、過低或者過高(例如將導電體溫度資訊與一預設溫度資訊比較，但不以此為限)，進而適當地調整雷射光產生模組M3所輸出的功率大小。然而，上述所舉的例子只是其中一可行的實施例而並非用以限定本發明。
值得一提的是，配合圖1至圖14所示，本發明還提供一種應用於固接LED的雷射加熱裝置Z，其包括：一電路基板10、一光學模組M2、一雷射光產生模組M3、一溫控模組M5以及一控制模組M6。電路基板10用於承載多個導電體101。光學模組M2設置在電路基板10的上方。雷射光產生模組M3鄰近光學模組M2，以提供具有一第一預定照射範圍R1的一雷射光源L。溫控模組M5鄰近電路基板10，以用於偵測導電體101的溫度，而得到一導電體溫度資訊。控制模組M6電性連接於溫控模組M5與雷射光產生模組M3之間。其中，雷射光源L的第一預定照射範圍R1通過光學模組M2的光學調整而形成一第二預定照射範圍R2，第一預定照射範圍R1大於、小於或者等於第二預定照射範圍R2，第一預定照射範圍R1與第二預定照射範圍R2具有相同或者相異的形狀。其中，控制模組M6依據導電體溫度資訊，以調整雷射光產生模組M3所輸出的功率大小。
[第四實施例]
參閱圖15及圖16所示，並請一併配合圖1至圖14，本發明第四實施例所提供的一種應用於固接LED的雷射加熱裝置Z，與第一實施例的應用於固接LED的雷射加熱裝置Z相似，因此，相似的作動方式不再贅述。進一步來說，根據圖15與圖2、圖3比較所示，本發明第四實施例與第一實施的差異在於，本發明所提供的應用於固接LED的雷射加熱裝置Z還可將至少兩個導電體101設置在每一個發光二極體晶片102。
舉例來說，在本發明中，每一個發光二極體晶片102上可以設置至少二個導電體101，且導電體101可為錫球，或是其他型體且具導電性的材料，但不以此為限。接著，配合圖15所示，通過晶片取放模組M4將多個發光二極體晶片102放置在電路基板10上，並且每一個發光二極體晶片102的至少兩個導電體101對應在電路基板10的導電焊墊100上。然後，通過雷射光產生模組M3所產生雷射光源L，投向發光二極體晶片102。接下來，設置在發光二極體晶片102與電路基板10之間的導電體101受到雷射光源L的照射時，會產生軟化，而與電路基板10產生連接。最後，在導電體101固化後，使得發光二極體晶片102被固接在電路基板10，並通過導電體101而與電路基板10電性連接。然而，本發明不以上述所舉的例子為限。
[實施例的有益效果]
本發明的有益效果在於，本發明所提供的應用於固接LED的雷射加熱裝置Z，其能通過“應用於固接LED的雷射加熱裝置Z包括：一承載基板M1、一光學模組M2以及一雷射光產生模組M3”、“光學模組M2設置在承載基板M1的上方”、“雷射光產生模組M3鄰近光學模組M2，以提供具有一第一預定照射範圍R1的一雷射光源L”以及“導電體101通過雷射光源L的照射，以固接發光二極體晶片102，雷射光源L的第一預定照射範圍R1通過光學模組M2的光學調整而形成一第二預定照射範圍R2，第一預定照射範圍R1大於、小於或者等於第二預定照射範圍R2”的技術方案，以使得該發光二極體晶片被固接在一電路基板10上。
更進一步來說，本發明所提供的應用於固接LED的雷射加熱裝置Z可通過上述技術方案，利用光學模組M2的光學調整而使雷射光源L的第一預定照射範圍R1轉變成第二預定照射範圍R2，以進行發光二極體晶片102的固晶製程。
以上所公開的內容僅為本發明的優選可行實施例，並非因此侷限本發明的申請專利範圍，所以凡是運用本發明說明書及圖式內容所做的等效技術變化，均包含於本發明的申請專利範圍內。
10:電路基板
100:導電焊墊
101:導電體
102:發光二極體晶片
M1:承載基板
M2:光學模組
L:雷射光源
R1:第一預定照射範圍
R2:第二預定照射範圍
M3:雷射光產生模組

Claims (10)

  1. 一種應用於固接LED的雷射加熱裝置，其包括：一承載基板，其用於承載一電路基板，該電路基板包括多個導電焊墊、多個導電體以及多個發光二極體晶片，該些導電體分別設置在該些導電焊墊上，每一該發光二極體晶片設置在相對應的至少兩個該導電體上；一光學模組，其設置在該承載基板的上方；以及一雷射光產生模組，其鄰近該光學模組，以提供具有一第一預定照射範圍的一雷射光源；其中，該導電體通過該雷射光源的照射，以固接該發光二極體晶片，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍，該第一預定照射範圍大於、小於或者等於該第二預定照射範圍；其中，該雷射光產生模組所產生的該雷射光源穿過該發光二極體晶片，以投向該導電體與該電路基板。
  2. 如申請專利範圍第1項所述之應用於固接LED的雷射加熱裝置，其中，每一該發光二極體晶片包括呈堆疊狀設置的一n型導電層、一被該雷射光源穿過的發光層以及一p型導電層，該n型導電層為n型氮化鎵材料層或n型砷化鎵材料層，該發光層為多量子井結構層，該p型導電層為p型氮化鎵材料層或p型砷化鎵材料層；其中，該雷射光源的照射面積只涵蓋一個該導電體或者一個該發光二極體晶片，且該雷射光產生模組所產生的該雷射光源的強度可調整；其中，該雷射光源不會穿過該電路基板，而只穿過該發光二極體晶片。
  3. 如申請專利範圍第1項所述之應用於固接LED的雷射加熱裝置，其中，每一該發光二極體晶片包括呈堆疊狀設置的一基層、一n型導電層、一被該雷射光源穿過的發光層以及一p型導電層， 該基層為藍寶石基層，該n型導電層為n型氮化鎵材料層或n型砷化鎵材料層，該發光層為多量子井結構層，該p型導電層為p型氮化鎵材料層或p型砷化鎵材料層；其中，該雷射光源的照射面積只涵蓋一個該導電體或者一個該發光二極體晶片，且該雷射光產生模組所產生的該雷射光源的強度可調整；其中，該雷射光源不會穿過該電路基板，而只穿過該發光二極體晶片。
  4. 如申請專利範圍第1項所述之應用於固接LED的雷射加熱裝置，還進一步包括：一晶片取放模組，其鄰近該承載基板，以用於將每一該發光二極體晶片放置在相對應的至少兩個該導電體上；其中，該雷射光源穿過該發光二極體晶片而投射在該導電體上，以固化該導電體且使得該發光二極體晶片被固接在該電路基板上；其中，該第一預定照射範圍與該第二預定照射範圍具有相同或者相異的形狀。
  5. 如申請專利範圍第1項所述之應用於固接LED的雷射加熱裝置，還進一步包括：一溫控模組，其鄰近該承載基板，以用於偵測該導電體的溫度，而得到一導電體溫度資訊；以及一控制模組，其電性連接於該溫控模組與該雷射光產生模組之間；其中，該控制模組依據該導電體溫度資訊，以調整該雷射光產生模組所輸出的功率大小。
  6. 一種應用於固接LED的雷射加熱裝置，其包括：一電路基板，其用於承載多個導電體以及多個發光二極體晶片；一光學模組，其設置在該電路基板的上方；以及一雷射光產生模組，其鄰近該光學模組，以提供具有一第一預 定照射範圍的一雷射光源；其中，該導電體通過該雷射光源的照射，以固接該發光二極體晶片，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍，該第一預定照射範圍大於、小於或者等於該第二預定照射範圍；其中，該雷射光產生模組所產生的該雷射光源穿過該發光二極體晶片，以投向該導電體與該電路基板。
  7. 如申請專利範圍第6項所述之應用於固接LED的雷射加熱裝置，其中，每一該發光二極體晶片包括呈堆疊狀設置的一n型導電層、一被該雷射光源穿過的發光層以及一p型導電層，該n型導電層為n型氮化鎵材料層或n型砷化鎵材料層，該發光層為多量子井結構層，該p型導電層為p型氮化鎵材料層或p型砷化鎵材料層；其中，該雷射光源的照射面積只涵蓋一個該導電體或者一個該發光二極體晶片，且該雷射光產生模組所產生的該雷射光源的強度可調整。
  8. 如申請專利範圍第6項所述之應用於固接LED的雷射加熱裝置，其中，每一該發光二極體晶片包括呈堆疊狀設置的一基層、一n型導電層、一被該雷射光源穿過的發光層以及一p型導電層，該基層為藍寶石基層，該n型導電層為n型氮化鎵材料層或n型砷化鎵材料層，該發光層為多量子井結構層，該p型導電層為p型氮化鎵材料層或p型砷化鎵材料層；其中，該雷射光源的照射面積只涵蓋一個該導電體或者一個該發光二極體晶片，且該雷射光產生模組所產生的該雷射光源的強度可調整。
  9. 如申請專利範圍第6項所述之應用於固接LED的雷射加熱裝置，還進一步包括：一溫控模組，其鄰近該電路基板，以用於偵測該導電體的溫度，而得到一導電體溫度資訊；以及 一控制模組，其電性連接於該溫控模組與該雷射光產生模組之間；其中，該控制模組依據該導電體溫度資訊，以調整該雷射光產生模組所輸出的功率大小。
  10. 一種應用於固接LED的雷射加熱裝置，其包括：一電路基板，其用於承載多個導電體；一光學模組，其設置在該電路基板的上方；一雷射光產生模組，其鄰近該光學模組，以提供具有一第一預定照射範圍的一雷射光源；一溫控模組，其鄰近該電路基板，以用於偵測該導電體的溫度，而得到一導電體溫度資訊；以及一控制模組，其電性連接於該溫控模組與該雷射光產生模組之間；其中，該雷射光源的該第一預定照射範圍通過該光學模組的光學調整而形成一第二預定照射範圍，該第一預定照射範圍大於、小於或者等於該第二預定照射範圍，該第一預定照射範圍與該第二預定照射範圍具有相同或者相異的形狀；其中，該雷射光產生模組所產生的該雷射光源穿過該發光二極體晶片，以投向該導電體與該電路基板；其中，該控制模組依據該導電體溫度資訊，以調整該雷射光產生模組所輸出的功率大小。
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Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI751449B (zh) * 2019-11-12 2022-01-01 博隆精密科技股份有限公司 雷射加工佈線方法
TWI747585B (zh) * 2020-10-30 2021-11-21 昱凱科技股份有限公司 顯示裝置的製造方法
CN114447199A (zh) * 2020-10-30 2022-05-06 昱凯科技股份有限公司 显示设备的制造方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201523758A (zh) * 2013-12-12 2015-06-16 Shibuya Kogyo Co Ltd 接合裝置
TWM554224U (zh) * 2017-10-02 2018-01-11 盟立自動化股份有限公司 雷射輔助接合裝置
TW201815503A (zh) * 2016-10-20 2018-05-01 科泰機械股份有限公司 光均勻化模組及包括其的雷射焊接裝置
TW201816961A (zh) * 2016-10-21 2018-05-01 矽品精密工業股份有限公司 半導體組件的回焊方法
CN108346597A (zh) * 2017-12-28 2018-07-31 大族激光科技产业集团股份有限公司 一种真空加热系统、晶片剥离装置及方法

Family Cites Families (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US4657169A (en) * 1984-06-11 1987-04-14 Vanzetti Systems, Inc. Non-contact detection of liquefaction in meltable materials
JPH052111U (ja) * 1991-06-19 1993-01-14 日本電気レーザ機器エンジニアリング株式会社 レーザ出射光学機構
JP2000033489A (ja) * 1998-07-22 2000-02-02 Mitsubishi Electric Corp レーザ装置
JP2002111197A (ja) * 2000-10-02 2002-04-12 Sony Corp 部品交換方法および部品交換装置
JP3925169B2 (ja) * 2001-11-26 2007-06-06 株式会社デンソー レーザー光による材料の同時一括溶融方法及び装置
JP3775410B2 (ja) * 2003-02-03 2006-05-17 セイコーエプソン株式会社 レーザー加工方法、レーザー溶接方法並びにレーザー加工装置
FR2853200B1 (fr) * 2003-03-27 2005-10-07 Valeo Vision Procede de fixation d'une diode electroluminescente de puissance sur un radiateur, et dispositif de signalisation comportant une telle diode.
JP2006305608A (ja) * 2005-04-28 2006-11-09 Toshiba Corp レーザ加工装置、及びレーザ加工方法
US20080047939A1 (en) * 2006-08-25 2008-02-28 Stefan Hummelt Process and apparatus for joining at least two elements
CN101439431A (zh) * 2007-11-21 2009-05-27 新科实业有限公司 多束激光接合机及接合方法
RU2011103797A (ru) * 2008-07-03 2012-08-10 Конинклейке Филипс Электроникс Н.В. (Nl) Несущий модуль для твердотельного источника света, осветительное устройство, содержащее такой модуль, и способ изготовления такого осветительного устройства
DE102009017659A1 (de) * 2009-04-16 2010-10-28 Schott Ag Verfahren zur leitenden Verbindung eines Bauelementes auf einem transprenten Substrat
CN102280393A (zh) * 2011-07-25 2011-12-14 上海祯显电子科技有限公司 一种芯片的焊接方法
US8691598B1 (en) * 2012-12-06 2014-04-08 Ultratech, Inc. Dual-loop control for laser annealing of semiconductor wafers
CN104759723B (zh) * 2015-04-01 2017-03-01 华中科技大学 一种激光焊接装置与方法
WO2016175654A2 (en) * 2015-04-28 2016-11-03 Nederlandse Organisatie Voor Toegepast-Natuurwetenschappelijk Onderzoek Tno Transfer and soldering of chips
JP6806774B2 (ja) * 2015-12-07 2021-01-06 グロ アーベーＧｌｏ Ａｂ 基板間ｌｅｄ移送のための、孤立ｉｉｉ族窒化物光アイランド上のレーザリフトオフ
US20170215280A1 (en) * 2016-01-21 2017-07-27 Vuereal Inc. Selective transfer of micro devices
WO2017142877A1 (en) * 2016-02-16 2017-08-24 Glo Ab Method of selectively transferring led die to a backplane using height controlled bonding structures
KR101908915B1 (ko) * 2016-06-10 2018-10-18 크루셜머신즈 주식회사 릴-투-릴 레이저 리플로우 방법
KR102042179B1 (ko) * 2016-09-15 2019-11-07 일룩스 아이엔씨. 흡착 및 제거 시스템 및 발광 디스플레이를 복원하는 방법
CN110709989B (zh) * 2017-03-30 2023-12-01 维耶尔公司 垂直固态装置
TWI662638B (zh) * 2017-04-21 2019-06-11 台灣愛司帝科技股份有限公司 半導體晶片修補方法以及半導體晶片修補裝置
KR20180137888A (ko) * 2017-06-20 2018-12-28 주식회사 프로텍 반도체 칩 본딩 장치 및 반도체 칩 본딩 방법
KR101937360B1 (ko) * 2017-07-17 2019-01-11 크루셜머신즈 주식회사 레이저 리플로우 장치
KR20190019745A (ko) * 2017-08-18 2019-02-27 주식회사 루멘스 발광소자 및 그 제조방법
US20190061053A1 (en) * 2017-08-24 2019-02-28 GM Global Technology Operations LLC Laser brazing of metal workpieces with relative movement between laser beam and filler wire
CN107511551B (zh) * 2017-08-31 2020-02-18 歌尔股份有限公司 锡球激光焊接方法
US10790261B2 (en) * 2018-03-12 2020-09-29 Taiwan Semiconductor Manufacturing Company, Ltd. Bonding through multi-shot laser reflow
CN108873985A (zh) * 2018-08-06 2018-11-23 武汉博联特科技有限公司 一种激光软钎焊的温度控制方法及系统
TWI774936B (zh) * 2019-03-08 2022-08-21 台灣愛司帝科技股份有限公司 承載結構及承載設備
TWI698964B (zh) * 2019-03-15 2020-07-11 台灣愛司帝科技股份有限公司 晶片固接結構及晶片固接設備
EP3738922A1 (en) * 2019-05-13 2020-11-18 AT & S Austria Technologie & Systemtechnik Aktiengesellschaft Hermetic optical component package having organic portion and inorganic portion
TWI698949B (zh) * 2019-08-07 2020-07-11 台灣愛司帝科技股份有限公司 薄膜結構、晶片承載組件及晶片承載設備

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW201523758A (zh) * 2013-12-12 2015-06-16 Shibuya Kogyo Co Ltd 接合裝置
TW201815503A (zh) * 2016-10-20 2018-05-01 科泰機械股份有限公司 光均勻化模組及包括其的雷射焊接裝置
TW201816961A (zh) * 2016-10-21 2018-05-01 矽品精密工業股份有限公司 半導體組件的回焊方法
TWM554224U (zh) * 2017-10-02 2018-01-11 盟立自動化股份有限公司 雷射輔助接合裝置
CN108346597A (zh) * 2017-12-28 2018-07-31 大族激光科技产业集团股份有限公司 一种真空加热系统、晶片剥离装置及方法

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