CN111668132A - 应用于固接led的激光加热装置 - Google Patents

应用于固接led的激光加热装置 Download PDF

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CN111668132A
CN111668132A CN201910203644.3A CN201910203644A CN111668132A CN 111668132 A CN111668132 A CN 111668132A CN 201910203644 A CN201910203644 A CN 201910203644A CN 111668132 A CN111668132 A CN 111668132A
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laser
light source
irradiation range
conductor
module
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廖建硕
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Stoke Precision Technology Co ltd
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Asti Global Inc Taiwan
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    • H01L33/02—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H01L33/06—Semiconductor devices with at least one potential-jump barrier or surface barrier specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier

Abstract

本发明公开一种应用于固接LED的激光加热装置，其包括：一承载基板、一光学模块以及一激光产生模块。承载基板用于承载一电路基板，电路基板包括多个导电焊垫、多个导电体以及多个发光二极管芯片，这些导电体分别设置在这些导电焊垫上，每一个发光二极管芯片设置在相对应的至少两个导电体上。光学模块设置在承载基板的上方。激光产生模块邻近光学模块，以提供具有一第一预定照射范围的一激光光源。导电体通过激光光源的照射，以固接发光二极管芯片，激光光源的第一预定照射范围通过光学模块的光学调整而形成一第二预定照射范围。因此，导电体能够受到穿过发光二极管芯片的激光光源的照射而固化，而使得发光二极管芯片被固接在电路基板上。

Description

应用于固接LED的激光加热装置
技术领域
本发明涉及一种激光加热装置，特别是涉及一种应用于固接LED的激光加热装置。
背景技术
目前，发光二极管(Light-Emitting Diode，LED)因具备光质好以及发光效率高等特性而得到广泛的应用。一般来说，为了使采用发光二极管作为发光组件的显示设备具有较佳的色彩表现能力，现有技术是利用红、绿、蓝三种颜色的发光二极管芯片的相互搭配而组成一全彩发光二极管显示设备，此全彩发光二极管显示设备可通过红、绿、蓝三种颜色的发光二极管芯片分别发出的红、绿、蓝三种的颜色光，然后再通过混光后形成一全彩色光，以进行相关信息的显示。然而，在现有技术中，将发光二极管芯片固定在电路基板上的制作中，都需要先将承载发光二极管芯片的基板先行移除。
发明内容
本发明所要解决的技术问题在于，针对现有技术的不足提供一种应用于固接LED的激光加热装置。
为了解决上述的技术问题，本发明所采用的其中一技术方案是，提供一种应用于固接LED的激光加热装置，其包括：一承载基板、一光学模块以及一激光产生模块。承载基板用于承载一电路基板，该电路基板包括多个导电焊垫、多个导电体以及多个发光二极管芯片，这些导电体分别设置在这些导电焊垫上，每一该发光二极管芯片设置在相对应的至少两个该导电体上。光学模块设置在该承载基板的上方。激光产生模块邻近该光学模块，以提供具有一第一预定照射范围的一激光光源。其中，该导电体通过该激光光源的照射，以固接该发光二极管芯片，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围。
更进一步地，每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整；其中，该激光光源不会穿过该电路基板，而只穿过该发光二极管芯片。
更进一步地，每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该基层为蓝宝石基层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整；其中，该激光光源不会穿过该电路基板，而只穿过该发光二极管芯片。
更进一步地，所述激光加热装置还进一步包括：一芯片取放模块，其邻近该承载基板，以用于将每一该发光二极管芯片放置在相对应的至少两个该导电体上；其中，该激光光源穿过该发光二极管芯片而投射在该导电体上，以固化该导电体且使得该发光二极管芯片被固接在该电路基板上；其中，该第一预定照射范围与该第二预定照射范围具有相同或者相异的形状。
更进一步地，所述激光加热装置，还进一步包括：一温控模块，其邻近该承载基板，以用于检测该导电体的温度，而得到一导电体温度信息；以及一控制模块，其电性连接于该温控模块与该激光产生模块之间；其中，该控制模块依据该导电体温度信息，以调整该激光产生模块所输出的功率大小。
为了解决上述的技术问题，本发明所采用的另外一技术方案是，提供一种应用于固接LED的激光加热装置，其包括：一承载基板、一光学模块以及一激光产生模块。承载基板用于承载多个导电体以及多个发光二极管芯片。光学模块设置在该承载基板的上方。激光产生模块邻近该光学模块，以提供具有一第一预定照射范围的一激光光源。其中，该导电体通过该激光光源的照射，以固接该发光二极管芯片，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围。
更进一步地，每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整。
更进一步地，每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该基层为蓝宝石基层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整。
更进一步地，所述激光加热装置，还进一步包括：一温控模块，其邻近该承载基板，以用于检测该导电体的温度，而得到一导电体温度信息；以及一控制模块，其电性连接于该温控模块与该激光产生模块之间；其中，该控制模块依据该导电体温度信息，以调整该激光产生模块所输出的功率大小。
为了解决上述的技术问题，本发明所采用的另外再一技术方案是，提供一种应用于固接LED的激光加热装置，其包括：一承载基板、一光学模块、一激光产生模块、一温控模块以及一控制模块。承载基板用于承载多个导电体。光学模块设置在该承载基板的上方。激光产生模块邻近该光学模块，以提供具有一第一预定照射范围的一激光光源。温控模块邻近该承载基板，以用于检测该导电体的温度，而得到一导电体温度信息。控制模块电性连接于该温控模块与该激光产生模块之间。其中，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围，该第一预定照射范围与该第二预定照射范围具有相同或者相异的形状。其中，该控制模块依据该导电体温度信息，以调整该激光产生模块所输出的功率大小。
本发明的有益效果在于，本发明所提供的应用于固接LED的激光加热装置，其能通过“应用于固接LED的激光加热装置包括：一承载基板、一光学模块以及一激光产生模块”、“光学模块设置在该承载基板的上方”、“激光产生模块邻近该光学模块，以提供具有一第一预定照射范围的一激光光源”以及“该导电体通过该激光光源的照射，以固接该发光二极管芯片，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围”的技术方案，以使得该发光二极管芯片被固接在一电路基板上。
为使能更进一步了解本发明的特征及技术内容，请参阅以下有关本发明的详细说明与附图，然而所提供的附图仅用于提供参考与说明，并非用来对本发明加以限制。
附图说明
图1为本发明第一实施例的应用于固接LED的激光加热装置的第一操作示意图。
图2为本发明第一实施例的应用于固接LED的激光加热装置的第二操作示意图。
图3为本发明第一实施例的应用于固接LED的激光加热装置的第三操作示意图。
图4为本发明第一实施例的应用于固接LED的激光加热装置的第四操作示意图。
图5为本发明第一实施例的应用于固接LED的激光加热装置的第五操作示意图。
图6为图5中VI部分的放大示意图。
图7为本发明第一实施例的激光光源的第二预定照射范围的照射示意图。
图8为本发明第一实施例的应用于固接LED的激光加热装置的第六操作示意图。
图9为本发明第一实施例的应用于固接LED的激光加热装置的第七操作示意图。
图10为本发明第一实施例的应用于固接LED的激光加热装置的第八操作示意图。
图11为本发明第二实施例的应用于固接LED的激光加热装置的第一操作示意图。
图12为本发明第二实施例的应用于固接LED的激光加热装置的第二操作示意图。
图13为本发明第三实施例的应用于固接LED的激光加热装置的部分模块的结构示意图。
图14为本发明第三实施例的应用于固接LED的激光加热装置的功能方框示意图。
图15为本发明第四实施例的应用于固接LED的激光加热装置的第一操作示意图。
图16为本发明第四实施例的应用于固接LED的激光加热装置的第二操作示意图。
具体实施方式
以下是通过特定的具体实施例来说明本发明所公开有关“应用于固接LED的激光加热装置”的实施方式，本领域技术人员可由本说明书所公开的内容了解本发明的优点与效果。本发明可通过其他不同的具体实施例加以施行或应用，本说明书中的各项细节也可基于不同观点与应用，在不背离本发明的构思下进行各种修改与变更。另外，本发明的附图仅为简单示意说明，并非依实际尺寸的描绘，事先声明。以下的实施方式将进一步详细说明本发明的相关技术内容，但所公开的内容并非用以限制本发明的保护范围。
应当可以理解的是，虽然本文中可能会使用到“第一”、“第二”、“第三”等术语来描述各种组件或者信号，但这些组件或者信号不应受这些术语的限制。这些术语主要是用以区分一组件与另一组件，或者一信号与另一信号。另外，本文中所使用的术语“或”，应视实际情况可能包括相关联的列出项目中的任意一个或者多个的组合。
第一实施例
参阅图1至图10所示，并请一并配合图14，本发明第一实施例提供一种应用于固接LED的激光加热装置Z，其包括：一承载基板M1、一光学模块M2以及一激光产生模块M3。
首先，配合图1与图2所示，承载模块M1上承载一电路基板10，承载模块M1可为具备位移功能的载台设备，但不以此为限。电路基板10包括多个导电焊垫100、多个导电体101以及多个发光二极管芯片102，多个导电体101分别设置在这些导电焊垫100上；举例来说，每一个导电焊垫100上可以设置至少一个导电体101，且导电体101可为锡球，或是其他型体且具导电性的材料，但不以此为限。而多个发光二极管芯片102设置在电路基板10上，每一个发光二极管芯片102设置在至少两个导电体101上。
进一步来说，配合图3所示，本发明所提供的应用于固接LED的激光加热装置Z，还进一步包括：一芯片取放模块M4，其邻近承载基板M1，以用于将每一个发光二极管芯片102放置在相对应的至少两个导电体101上。举例来说，本发明还可通过芯片取放模块M4将多个发光二极管芯片102放置在电路基板10上，并且每一个发光二极管芯片102对应在至少两个导电体101上。其中，芯片取放模块M4可以是真空吸嘴或者任何种类的取放机器(pick andplace machine)。然而，本发明不以上述所举的例子为限。
光学模块M2设置在承载基板M1的上方，并位于激光产生模块M3与电路基板10之间，光学模块M2可为透镜结构或导光板结构，但不以此为限。激光产生模块M3可提供具有一第一预定照射范围R1的一激光光源L，并投向光学模块M2。而在激光光源L的第一预定照射范围R1通过光学模块M2的光学调整而形成第二预定照射范围R2；其中，第一预定照射范围R1可大于、小于或者等于第二预定照射范围R2，在本实施例中，以第一预定照射范围R1可小于第二预定照射范围R2作为示例，但不以此为限。并且，第一预定照射范围R1与第二预定照射范围R2可具有相同或者相异的形状。
进一步来说，配合图4至图7所示，第二预定照射范围R2的激光光源L投向每一个发光二极管芯片102时，会穿过发光二极管芯片102的n型导电层N、发光层M及p型导电层P，进而投射在电路基板10的至少两个导电体101上。进一步来说，配合图6所示，每一个发光二极管芯片102可为微型半导体发光组件(Micro LED)，其包括呈堆栈状设置的一n型导电层N、一被激光光源L穿过的发光层M以及一p型导电层P，n型导电层N可为n型氮化镓材料层或n型砷化镓材料层，发光层M为多量子阱结构层，p型导电层P可为p型氮化镓材料层或p型砷化镓材料层，但不以此为限。然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
更进一步来说，配合图7所示，激光光源L的第二预定照射范围R2可涵盖多个发光二极管芯片102，例如，第二预定照射范围R2可涵盖4*4个发光二极管芯片102，但不以此为限。并且，本发明还可通过调整激光产生模块M的激光光源L的强度，使得激光产生模块M3所产生的激光光源L只穿过发光二极管芯片102，而不会穿过电路基板10。然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
最后，配合图6及图8所示，设置在发光二极管芯片102与电路基板10之间的导电体101通过激光光源L的照射而固化，以使得发光二极管芯片102被固接在电路基板10上。举例来说，设置在发光二极管芯片102与电路基板10之间的导电体101受到激光光源L的照射时，会产生软化，而与发光二极管芯片102产生连接。接着，在导电体101固化后，使得发光二极管芯片102被固接在电路基板10，并通过导电体101而与电路基板10电性连接。然而，本发明不以上述所举的例子为限。
此外，进一步配合图9至图10所示，本发明所提供的应用于固接LED的激光加热装置Z还进一步可将激光产生模块M3所产生的激光光源L投向发光二极管芯片102与导电体101的接触接口F，而降低发光二极管芯片102与导电体101之间的连接强度，以使得发光二极管芯片102容易脱离导电体101而从电路基板10上取下。举例来说，本发明还可通过激光产生模块M3所产生的激光光源L投向发光二极管芯片102与已固化的导电体101之间的接触接口F，以使靠近接触接口F的部分导电体101软化，而降低发光二极管芯片102与导电体101之间的连接强度、结合力，进而使得发光二极管芯片102可容易脱离导电体101而从电路基板10上取下。然后，可利用特殊器具(例如刮除器或研磨器)将与发光二极管芯片102分离的至少两个旧的导电体101从电路基板10上取下，以方便之后可重新安置新的导电体101。然而，本发明不以上述所举的例子为限。
更进一步地，配合图1至图10所示，本发明还可提供一种应用于固接LED的激光加热装置Z，其包括：一电路基板10、一光学模块M2以及一激光产生模块M3。电路基板10用于承载多个导电体101以及多个发光二极管芯片102。光学模块M2设置在电路基板10的上方。激光产生模块M3邻近光学模块M2，以提供具有一第一预定照射范围R1的一激光光源L。其中，导电体101通过激光光源L的照射，以固接发光二极管芯片102，激光光源L的第一预定照射范围R1通过光学模块M2的光学调整而形成一第二预定照射范围R2，第一预定照射范围R1大于、小于或者等于第二预定照射范围R2。
值得注意的是，上述实施方式中，用于使导电体101与发光二极管芯片102接合的激光光源L与用于降低导电体11结合力的激光光源L的波长可彼此不同或相同。
第二实施例
参阅图11及图12所示，并请一并配合图1至图10，本发明第二实施例所提供的一种应用于固接LED的激光加热装置Z，与第一实施例的应用于固接LED的激光加热装置Z相似，因此，相似的动作方式不再赘述。进一步来说，配合图6，并根据图11、图12与图5、图8比较所示，本发明第二实施例与第一实施的差异在于，本实施的每一个发光二极管芯片102可为次毫米发光二极管(Mini LED)，其包括呈堆栈状设置的一基层1020、一n型导电层N、一被激光光源L穿过的发光层M以及一p型导电层P，基层1020为蓝宝石(sapphire)材料层，n型导电层N可为n型氮化镓材料层或n型砷化镓材料层，发光层M为多量子阱结构层，p型导电层P可为p型氮化镓材料层或p型砷化镓材料层，但不以此为限。基层1020还可以是石英基底层、玻璃基底层、硅基底层或者任何材料的基底层。然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
举例来说，第二预定照射范围R2的激光光源L投向每一个发光二极管芯片102时，会穿过基层1020、n型导电层N、发光层M及p型导电层P，进而投射在电路基板10的至少两个导电体101上。接着，设置在发光二极管芯片102与电路基板10之间的导电体101通过激光光源L的照射而固化，以使得发光二极管芯片102被固接在电路基板10上。然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
第三实施例
参阅图13及图14所示，并请一并配合图1至图12，本发明第三实施例所提供的一种应用于固接LED的激光加热装置Z，与第一实施例的应用于固接LED的激光加热装置Z相似，因此，相似的动作方式不再赘述。进一步来说，本发明第三实施例与第一实施的差异在于，本发明所提供的应用于固接LED的激光加热装置Z还进一步包括：一温控模块M5以及一控制模块M6。温控模块M5邻近承载基板M1，以用于检测导电体101的温度，而得到一导电体温度信息。控制模块M6电性连接于温控模块M5与激光产生模块M3之间。其中，控制模块M6依据导电体温度信息，以调整激光产生模块M3所输出的功率大小。
举例来说，温控模块M5可为温度传感器或者温度控制器，但不以此为限。温控模块M5的感测端可穿设于承载基板M1中，并邻近于电路基板10，或者温控模块M5的感测端可位于承载基板M1的外部，并邻近于电路基板10上的其中一或部分的导电体101。并且，控制模块M6电性连接于承载基板M1、激光产生模块M3、芯片取放模块M4以及温控模块M5。因此，在激光光源L投射到电路基板10上的导电体101的同时或者之后，可通过温控模块M5检测导电体101的温度，而得到一导电体温度信息。接着，控制模块M6可根据导电体温度信息而判读激光产生模块M3所输出的功率是否足够、过低或者过高(例如将导电体温度信息与一默认温度信息比较，但不以此为限)，进而适当地调整激光产生模块M3所输出的功率大小。然而，上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
值得一提的是，配合图1至图14所示，本发明还提供一种应用于固接LED的激光加热装置Z，其包括：一电路基板10、一光学模块M2、一激光产生模块M3、一温控模块M5以及一控制模块M6。电路基板10用于承载多个导电体101。光学模块M2设置在电路基板10的上方。激光产生模块M3邻近光学模块M2，以提供具有一第一预定照射范围R1的一激光光源L。温控模块M5邻近电路基板10，以用于检测导电体101的温度，而得到一导电体温度信息。控制模块M6电性连接于温控模块M5与激光产生模块M3之间。其中，激光光源L的第一预定照射范围R1通过光学模块M2的光学调整而形成一第二预定照射范围R2，第一预定照射范围R1大于、小于或者等于第二预定照射范围R2，第一预定照射范围R1与第二预定照射范围R2具有相同或者相异的形状。其中，控制模块M6依据导电体温度信息，以调整激光产生模块M3所输出的功率大小。
第四实施例
参阅图15及图16所示，并请一并配合图1至图14，本发明第四实施例所提供的一种应用于固接LED的激光加热装置Z，与第一实施例的应用于固接LED的激光加热装置Z相似，因此，相似的动作方式不再赘述。进一步来说，根据图15与图2、图3比较所示，本发明第四实施例与第一实施的差异在于，本发明所提供的应用于固接LED的激光加热装置Z还可将至少两个导电体101设置在每一个发光二极管芯片102。
举例来说，在本发明中，每一个发光二极管芯片102上可以设置至少两个导电体101，且导电体101可为锡球，或是其他型体且具导电性的材料，但不以此为限。接着，配合图15所示，通过芯片取放模块M4将多个发光二极管芯片102放置在电路基板10上，并且每一个发光二极管芯片102的至少两个导电体101对应在电路基板10的导电焊垫100上。然后，通过激光产生模块M3所产生激光光源L，投向发光二极管芯片102。接下来，设置在发光二极管芯片102与电路基板10之间的导电体101受到激光光源L的照射时，会产生软化，而与电路基板10产生连接。最后，在导电体101固化后，使得发光二极管芯片102被固接在电路基板10，并通过导电体101而与电路基板10电性连接。然而，本发明不以上述所举的例子为限。
实施例的有益效果
本发明的有益效果在于，本发明所提供的应用于固接LED的激光加热装置Z，其能通过“应用于固接LED的激光加热装置Z包括：一承载基板M1、一光学模块M2以及一激光产生模块M3”、“光学模块M2设置在承载基板M1的上方”、“激光产生模块M3邻近光学模块M2，以提供具有一第一预定照射范围R1的一激光光源L”以及“导电体101通过激光光源L的照射，以固接发光二极管芯片102，激光光源L的第一预定照射范围R1通过光学模块M2的光学调整而形成一第二预定照射范围R2，第一预定照射范围R1大于、小于或者等于第二预定照射范围R2”的技术方案，以使得该发光二极管芯片被固接在一电路基板10上。
更进一步来说，本发明所提供的应用于固接LED的激光加热装置Z可通过上述技术方案，利用光学模块M2的光学调整而使激光光源L的第一预定照射范围R1转变成第二预定照射范围R2，以进行发光二极管芯片102的固晶制作。
以上所公开的内容仅为本发明的优选可行实施例，并非因此局限本发明的权利要求书的保护范围，所以凡是运用本发明说明书及附图内容所做的等效技术变化，均包含于本发明的权利要求书的保护范围内。

Claims (10)

1.一种应用于固接LED的激光加热装置，其特征在于，该激光加热装置包括：
一承载基板，其用于承载一电路基板，该电路基板包括多个导电焊垫、多个导电体以及多个发光二极管芯片，所述多个导电体分别设置在所述多个导电焊垫上，每一该发光二极管芯片设置在相对应的至少两个该导电体上；
一光学模块，其设置在该承载基板的上方；以及
一激光产生模块，其邻近该光学模块，以提供具有一第一预定照射范围的一激光光源；
其中，该导电体通过该激光光源的照射，以固接该发光二极管芯片，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围。
2.根据权利要求1所述的应用于固接LED的激光加热装置，其特征在于，每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整；其中，该激光光源不会穿过该电路基板，而只穿过该发光二极管芯片。
3.根据权利要求1所述的应用于固接LED的激光加热装置，其特征在于，每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该基层为蓝宝石基层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整；其中，该激光光源不会穿过该电路基板，而只穿过该发光二极管芯片。
4.根据权利要求1所述的应用于固接LED的激光加热装置，其特征在于，该激光加热装置还进一步包括：一芯片取放模块，其邻近该承载基板，以用于将每一该发光二极管芯片放置在相对应的至少两个该导电体上；其中，该激光光源穿过该发光二极管芯片而投射在该导电体上，以固化该导电体且使得该发光二极管芯片被固接在该电路基板上；其中，该第一预定照射范围与该第二预定照射范围具有相同或者相异的形状。
5.根据权利要求1所述的应用于固接LED的激光加热装置，其特征在于，该激光加热装置还进一步包括：
一温控模块，其邻近该承载基板，以用于检测该导电体的温度，而得到一导电体温度信息；以及
一控制模块，其电性连接于该温控模块与该激光产生模块之间；
其中，该控制模块依据该导电体温度信息，以调整该激光产生模块所输出的功率大小。
6.一种应用于固接LED的激光加热装置，其特征在于，该激光加热装置包括：
一电路基板，其用于承载多个导电体以及多个发光二极管芯片；
一光学模块，其设置在该电路基板的上方；以及
一激光产生模块，其邻近该光学模块，以提供具有一第一预定照射范围的一激光光源；
其中，该导电体通过该激光光源的照射，以固接该发光二极管芯片，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围。
7.根据权利要求6所述的应用于固接LED的激光加热装置，其特征在于，每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整。
8.根据权利要求6所述的应用于固接LED的激光加热装置，其特征在于，每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该激光光源穿过的发光层以及一p型导电层，该基层为蓝宝石基层，该n型导电层为n型氮化镓材料层或n型砷化镓材料层，该发光层为多量子阱结构层，该p型导电层为p型氮化镓材料层或p型砷化镓材料层；其中，该激光光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片，且该激光产生模块所产生的该激光光源的强度可调整。
9.根据权利要求6所述的应用于固接LED的激光加热装置，其特征在于，该激光加热装置还进一步包括：
一温控模块，其邻近该承载基板，以用于检测该导电体的温度，而得到一导电体温度信息；以及
一控制模块，其电性连接于该温控模块与该激光产生模块之间；
其中，该控制模块依据该导电体温度信息，以调整该激光产生模块所输出的功率大小。
10.一种应用于固接LED的激光加热装置，其特征在于，该激光加热装置包括：
一电路基板，其用于承载多个导电体；
一光学模块，其设置在该电路基板的上方；
一激光产生模块，其邻近该光学模块，以提供具有一第一预定照射范围的一激光光源；
一温控模块，其邻近该电路基板，以用于检测该导电体的温度，而得到一导电体温度信息；以及
一控制模块，其电性连接于该温控模块与该激光产生模块之间；
其中，该激光光源的该第一预定照射范围通过该光学模块的光学调整而形成一第二预定照射范围，该第一预定照射范围大于、小于或者等于该第二预定照射范围，该第一预定照射范围与该第二预定照射范围具有相同或者相异的形状；
其中，该控制模块依据该导电体温度信息，以调整该激光产生模块所输出的功率大小。
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