CN111132459B - 发光二极管芯片的固接方法及固接装置 - Google Patents
发光二极管芯片的固接方法及固接装置 Download PDFInfo
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- 229910002601 GaN Inorganic materials 0.000 description 12
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- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
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Abstract
本发明公开一种发光二极管芯片的固接方法及固接装置。发光二极管芯片的固接方法包括:提供一电路基板,电路基板包括多个导电焊点;接着,将多个导电体分别设置在些导电焊点上;然后,将多个发光二极管芯片设置在电路基板,每一发光二极管芯片设置在至少两个导电体上;接下来,将一雷射光源产生模块所产生的一雷射光源投向每一发光二极管芯片,以使得雷射光源穿过发光二极管芯片且投射在至少两个导电体上;最后,设置在发光二极管芯片与电路基板之间的导电体通过雷射光源的照射而固化,以使得发光二极管芯片被固接在电路基板上。借此,导电体能够受到穿过发光二极管芯片的雷射光源的照射而固化,而使得发光二极管芯片被固接在电路基板上。
Description
技术领域
本发明涉及一种芯片的固接方法及固接装置,特别是涉及一种发光二极管芯片的固接方法及固接装置。
背景技术
目前,发光二极管(Light-Emitting Diode,LED)因具备光质佳以及发光效率高等特性而得到广泛的应用。一般来说,为了使采用发光二极管做为发光组件的显示设备具有较佳的色彩表现能力,现有技术是利用红、绿、蓝三种颜色的发光二极管芯片的相互搭配而组成一全彩发光二极管显示设备,此全彩发光二极管显示设备可通过红、绿、蓝三种颜色的发光二极管芯片分别发出的红、绿、蓝三种的颜色光,然后再通过混光后形成一全彩色光,以进行相关信息的显示。然而,在现有技术中,将发光二极管芯片固定在电路基板上的制程中,需要先将承载发光二极管芯片的基板先行移除。
发明内容
本发明所要解决的技术问题在于,针对现有技术的不足提供一种发光二极管芯片的固接方法及固接装置。
为了解决上述的技术问题,本发明所采用的其中一技术方案是,提供一种发光二极管芯片的固接方法,其包括:首先,提供一电路基板,该电路基板包括多个导电焊点;接着,将多个导电体分别设置在该些导电焊点上;然后,将多个发光二极管芯片设置在该电路基板,每一该发光二极管芯片设置在至少两个该导电体上;接下来,将一雷射光源产生模块所产生的一雷射光源投向每一该发光二极管芯片,以使得该雷射光源穿过该发光二极管芯片且投射在至少两个该导电体上;最后,设置在该发光二极管芯片与该电路基板之间的该导电体通过该雷射光源的照射而固化,以使得该发光二极管芯片被固接在该电路基板上。
更进一步地,每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度可调整;其中,该雷射光源不会穿过该电路基板,而只穿过该发光二极管芯片。
更进一步地,每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该基层为蓝宝石基层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度可调整;其中,该雷射光源不会穿过该电路基板,而只穿过该发光二极管芯片。
更进一步地,在提供该电路基板的步骤后,还进一步包括:将多个该导电体分别设置在该些导电焊点上,或将至少两个该导电体设置在每一该发光二极管芯片;其中,在该发光二极管芯片被固接在该电路基板上的步骤后,还进一步包括:将该雷射光源产生模块所产生的该雷射光源投向该发光二极管芯片与该导电体的接触接口,而降低该发光二极管芯片与该导电体之间的连接强度,以使得该发光二极管芯片容易脱离该导电体而从该电路基板上取下。
为了解决上述的技术问题,本发明所采用的另外一技术方案是,提供一种发光二极管芯片的固接装置,其包括:一承载模块、一芯片取放模块以及一雷射光源产生模块。该承载模块用于承载一电路基板,该电路基板包括多个导电焊点,多个导电体分别设置在该些导电焊点上。该芯片取放模块用于将多个发光二极管芯片设置在该电路基板,每一该发光二极管芯片设置在至少两个该导电体上。该雷射光源产生模块所产生的一雷射光源投向每一该发光二极管芯片,以使得该雷射光源穿过该发光二极管芯片且投射在至少两个该导电体上。其中,设置在该发光二极管芯片与该电路基板之间的该导电体通过该雷射光源的照射而固化,以使得该发光二极管芯片被固接在该电路基板上。
更进一步地,每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度可调整;其中,该雷射光源不会穿过该电路基板,而只穿过该发光二极管芯片。
更进一步地,每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该基层为蓝宝石基层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度可调整;其中,该雷射光源不会穿过该电路基板,而只穿过该发光二极管芯片。
为了解决上述的技术问题,本发明所采用的另外再一技术方案是,提供一种发光二极管芯片的固接装置,其包括一承载模块、一芯片取放模块以及一雷射光源产生模块,该雷射光源产生模块所产生的一雷射光源投向一发光二极管芯片,以使得该雷射光源穿过该发光二极管芯片且投射在至少两个导电体上,该导电体通过该雷射光源的照射而固化,以使得该发光二极管芯片被固接在一电路基板上。
更进一步地,每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度可调整;其中,该雷射光源不会穿过该电路基板,而只穿过该发光二极管芯片。
更进一步地,每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该基层为蓝宝石基层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度可调整;其中,该雷射光源不会穿过该电路基板,而只穿过该发光二极管芯片。
本发明的其中一有益效果在于,本发明所提供的发光二极管芯片的固接方法,其能通过“提供一电路基板,该电路基板包括多个导电焊点”、“将多个导电体分别设置在该些导电焊点上”、“将多个发光二极管芯片设置在该电路基板,每一该发光二极管芯片设置在至少两个该导电体上”、“将一雷射光源产生模块所产生的一雷射光源投向每一该发光二极管芯片,以使得该雷射光源穿过该发光二极管芯片且投射在至少两个该导电体上”以及“设置在该发光二极管芯片与该电路基板之间的该导电体通过该雷射光源的照射而固化”的技术方案,使得该发光二极管芯片被固接在该电路基板上。
本发明的另外一有益效果在于,本发明所提供的发光二极管芯片的固接装置,其能通过“一承载模块,其用于承载一电路基板,该电路基板包括多个导电焊点,多个导电体分别设置在该些导电焊点上”、“一雷射光源产生模块,其所产生的一雷射光源投向每一该发光二极管芯片,以使得该雷射光源穿过该发光二极管芯片且投射在至少两个该导电体上”以及“设置在该发光二极管芯片与该电路基板之间的该导电体通过该雷射光源的照射而固化”的技术方案,使得该发光二极管芯片被固接在该电路基板上。
本发明的另外再一有益效果在于,本发明所提供的发光二极管芯片的固接装置,其能通过“固接装置包括一承载模块、一芯片取放模块以及一雷射光源产生模块”以及“该雷射光源产生模块所产生的一雷射光源投向一发光二极管芯片,以使得该雷射光源穿过该发光二极管芯片且投射在至少两个导电体上,该导电体通过该雷射光源的照射而固化”的技术方案,使得该发光二极管芯片被固接在一电路基板上。
为使能更进一步了解本发明的特征及技术内容,请参阅以下有关本发明的详细说明与附图,然而所提供的附图仅用于提供参考与说明,并非用来对本发明加以限制。
附图说明
图1为本发明第一实施例所提供的发光二极管芯片的固接方法的流程图。
图2为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S200的示意图。
图3为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S201的示意图。
图4为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S202的示意图。
图5为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S203的示意图。
图6为图5中VI的放大示意图。
图7为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S203中的雷射光源照射范围的第一示意图。
图8为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S203中的雷射光源照射范围的第二示意图。
图9为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S204的示意图。
图10为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S205的第一示意图。
图11为本发明第一实施例所提供的发光二极管芯片的固接方法的步骤S205的第二示意图。
图12为本发明第一实施例所提供的发光二极管芯片的固接方法的侦测步骤的示意图。
图13为本发明所提供的发光二极管芯片的固接装置的方块示意图。
图14为本发明第二实施例所提供的发光二极管芯片的固接方法的第一示意图。
图15为本发明第二实施例所提供的发光二极管芯片的固接方法的第二示意图。
图16为本发明第三实施例所提供的发光二极管芯片的固接方法的第一示意图。
图17为本发明第三实施例所提供的发光二极管芯片的固接方法的第二示意图。
具体实施方式
以下是通过特定的具体实施例来说明本发明所公开有关“发光二极管芯片的固接方法及固接装置”的实施方式,本领域技术人员可由本说明书所公开的内容了解本发明的优点与效果。本发明可通过其他不同的具体实施例加以施行或应用,本说明书中的各项细节也可基于不同观点与应用,在不悖离本发明的构思下进行各种修改与变更。另外,本发明的附图仅为简单示意说明,并非依实际尺寸的描绘,事先声明。以下的实施方式将进一步详细说明本发明的相关技术内容,但所公开的内容并非用以限制本发明的保护范围。
应当可以理解的是,虽然本文中可能会使用到“第一”、“第二”、“第三”等术语来描述各种组件或者信号,但这些组件或者信号不应受这些术语的限制。这些术语主要是用以区分一组件与另一组件,或者一信号与另一信号。另外,本文中所使用的术语“或”,应视实际情况可能包括相关联的列出项目中的任一个或者多个的组合。
第一实施例
请参阅图1至图12所示,本发明第一实施例所提供一种发光二极管芯片的固接方法,其包括下列步骤:
首先,配合图1与图2所示,提供一电路基板10,电路基板10包括多个导电焊点100(步骤S200)。举例来说,在本发明的步骤S200中,可通过一承载模块M1承载一电路基板10,电路基板10还包括多个导电焊点100。承载模块M1可为具备位移功能的载台设备。然而,本发明不以上述所举的例子为限。
更进一步来说,配合图1及图3所示,本发明在提供电路基板10的步骤S200后,还进一步包括:将多个导电体11分别设置在该些导电焊点100上(步骤S201A)。举例来说,在本发明的步骤S201A中,每一个导电焊点100上可以设置至少一个导电体11,且导电体11可为锡球,或是其他型体且具导电性的材料。然而,本发明不以上述所举的例子为限。
接着,配合图1、图3及图4所示,将多个发光二极管芯片12设置在电路基板10,每一个发光二极管芯片12设置在至少两个导电体11上(步骤S202)。
举例来说,配合图1、图3及图4所示,在本发明的步骤S202中,通过芯片取放模块M2将多个发光二极管芯片12放置在电路基板10上,并且每一个发光二极管芯片12对应在至少两个导电体11上。其中,芯片取放模块M2可以是真空吸嘴或者任何种类的取放机器(pickand place machine)。然而,本发明不以上述所举的例子为限。
然后,配合图1及图5至图8所示,将一雷射光源产生模块M3所产生的一雷射光源L投向每一个发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上(步骤S203)。
举例来说,配合图1及图5至图8所示,本发明在步骤S202之后,紧接着步骤S203,通过一雷射光源产生模块M3产生一雷射光源L,并投向每一个发光二极管芯片12。雷射光源L投射至发光二极管芯片12时,会穿过发光二极管芯片12的n型导电层N、发光层M及p型导电层P,进而投射在电路基板10的至少两个导电体11上。更进一步来说,配合图6所示,每一个发光二极管芯片12可为微型半导体发光组件(Micro LED),其包括呈堆栈状设置的一n型导电层N、一被雷射光源L穿过的发光层M以及一p型导电层P,n型导电层N可为n型氮化镓材料层或n型砷化镓材料层,发光层M为多量子阱结构层,p型导电层P可为p型氮化镓材料层或p型砷化镓材料层,但不以此为限。然而,上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
更进一步来说,配合图7及图8所示,雷射光源L的照射面积只涵盖一个导电体11或者一个发光二极管芯片12,且雷射光源产生模块M3所产生的雷射光源L的强度可调整;其中,雷射光源L不会穿过电路基板10,而只穿过发光二极管芯片12。举例来说,本发明可通过调整雷射光源产生模块M3所产生的雷射光源L的强度,使得雷射光源产生模块M3所产生的雷射光源L在穿过发光二极管芯片12而投射在导电体11上时,雷射光源L的照射范围可以呈现多种态样,例如,配合图7所示,雷射光源L1的照射面积可以涵盖一个发光二极管芯片12,或是雷射光源L2的照射面积可以涵盖至少两个导电体11;更或者,配合图8所示,雷射光源L3的照射面积可以只涵盖一个导电体11。而且,本发明还可通过调整雷射光源产生模块M3,使得雷射光源产生模块M3所产生的雷射光源L3只穿过发光二极管芯片12,而不会穿过电路基板10。然而,上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
最后,配合图1及图4至图9所示,设置在发光二极管芯片12与电路基板10之间的导电体11通过雷射光源L的照射而固化,以使得发光二极管芯片12被固接在电路基板10上(步骤S204)。
举例来说,配合图1及图4至图9所示,在本发明的步骤S204中,设置在发光二极管芯片12与电路基板10之间的导电体11受到雷射光源L的照射时,会产生软化,而与发光二极管芯片12产生连接。接着,在导电体11固化后,使得发光二极管芯片12被固接在电路基板10,并通过导电体11而与电路基板10电性连接。然而,本发明不以上述所举的例子为限。
值得注意的是,配合图1、图9至图11所示,在发光二极管芯片被固接在电路基板上的步骤(步骤S204)后,还进一步包括:将雷射光源产生模块M3所产生的雷射光源L投向发光二极管芯片12与导电体11的接触接口F,而降低发光二极管芯片12与导电体11之间的连接强度,以使得发光二极管芯片12容易脱离导电体11而从电路基板10上取下(步骤S205)。
举例来说,配合图1、图9至图11所示,在本发明的步骤S204之后,本发明还可通过雷射光源产生模块M3所产生的雷射光源L投向发光二极管芯片12与已固化的导电体11之间的接触接口F,以使靠近接触接口F的部分导电体11软化,而降低发光二极管芯片12与导电体11之间的连接强度、结合力,进而使得发光二极管芯片12可容易脱离导电体11而从电路基板10上取下。
然后,配合图11所示,可利用特殊器具(例如刮除器或研磨器)将与发光二极管芯片12分离的至少两个旧的导电体11从电路基板10上取下,以利之后可重新安置新的导电体11。然而,本发明不以上述所举的例子为限。
此外,配合图1、图5以及图12所示,在将雷射光源产生模块M3所产生的雷射光源L投向每一个发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上的步骤(步骤S203)中,还进一步包括:利用一位置侦测模块M4以侦测至少一个导电体11的位置(即侦测步骤);然后,利用雷射光源产生模块M3所产生的雷射光源L投向发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上。举例来说,如图12所示,位置侦测模块M4至少包括一用于接收一侦测波L’的接收组件,并且侦测波L’可由雷射光源产生模块M3。然而,本发明不以上述所举的例子为限。
更进一步来说,配合图12及图13所示,本发明的发光二极管芯片的固接方法及固接装置进一步还可通过一控制模块C电性连接承载模块M1、芯片取放模块M2、雷射光源产生模块M3以及位置侦测模块M4,且控制模块C可根据内建程序或操作人员的控制而驱使各模块进行运作。然而,上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
更进一步地,配合图10以及图12所示,在将雷射光源产生模块M3所产生的雷射光源L投向发光二极管芯片12与已固化的导电体11的一接触接口F,而降低发光二极管芯片12与导电体11之间的连接强度,以使得发光二极管芯片12容易脱离导电体11而从电路基板10上取下的步骤(步骤S102)中,还进一步包括:利用位置侦测模块M4以侦测发光二极管芯片12与已固化的导电体11的接触接口F的位置(即侦测步骤);然后,利用雷射光源产生模块M3所产生的雷射光源L投向位于发光二极管芯片12与已固化的导电体11之间的接触接口F,以降低发光二极管芯片12与导电体11之间的连接强度。举例来说,如图12所示,位置侦测模块M4至少包括一用于接收一侦测波L’的接收组件,并且侦测波L’可由雷射光源产生模块M3所提供。然而,本发明不以上述所举的例子为限。
值得注意的是,上述实施态样中,用于使导电体11与发光二极管芯片12接合的雷射光源L与用于降低导电体11结合力的雷射光源L的波长可彼此不同或相同。
第二实施例
请参阅图14及图15所示,并请一并配合图1至图12,本发明第二实施例所提供的一种发光二极管芯片的固接方法,与第一实施例的发光二极管芯片的固接方法略为相近,因此,相似的流程步骤不再赘述。进一步来说,根据图5、图9与图14、图15比较所示,本发明第二实施例与第一实施的差异在于,本实施的每一个发光二极管芯片12可为次毫米发光二极管(Mini LED),其包括呈堆栈状设置的一基层120、一n型导电层N、一被雷射光源L穿过的发光层M以及一p型导电层P,基层120为蓝宝石(sapphire)材料层,n型导电层N可为n型氮化镓材料层或n型砷化镓材料层,发光层M为多量子阱结构层,p型导电层P可为p型氮化镓材料层或p型砷化镓材料层,但不以此为限。基层120还可以是石英基底层、玻璃基底层、硅基底层或者任何材料的基底层。然而,上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
举例来说,配合图14所示,在类似第一实施例的步骤S203中,本发明第二实施例通过一雷射光源产生模块M3所产生一雷射光源L,并投向每一个发光二极管芯片12。雷射光源L投射至发光二极管芯片12时,会穿过基层120、n型导电层N、发光层M及p型导电层P,进而投射在电路基板10的至少两个导电体11上。
更进一步来说,配合图15所示,在类似第一实施例的步骤S204中,本发明第二实施例设置在发光二极管芯片12与电路基板10之间的导电体11通过雷射光源L的照射而固化,以使得发光二极管芯片12被固接在电路基板10上。然而,上述所举的例子只是其中一可行的实施例而并非用以限定本发明。
值得一提的是,配合图1至图15所示,本发明还提供一种发光二极管芯片的固接装置Z,其包括一承载模块M1、一芯片取放模块M2以及一雷射光源产生模块M3,雷射光源产生模块M3所产生的一雷射光源L投向一发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上,导电体11通过雷射光源L的照射而固化,以使得发光二极管芯片12被固接在一电路基板10上。
更进一步地,配合图1至图15所示,本发明还可提供一种发光二极管芯片的固接装置Z,其包括:一承载模块M1、一芯片取放模块M2以及一雷射光源产生模块M3。承载模块M1用于承载一电路基板10,电路基板10包括多个导电焊点100,多个导电体11分别设置在该些导电焊点100上。芯片取放模块M2用于将多个发光二极管芯片12设置在电路基板10,每一个发光二极管芯片12设置在至少两个导电体11上。雷射光源产生模块M3所产生的一雷射光源L投向每一个发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上。其中,设置在发光二极管芯片12与电路基板10之间的导电体11通过雷射光源L的照射而固化,以使得发光二极管芯片12被固接在电路基板10上。
第三实施例
请参阅图16、图17所示,并请一并配合图1至图12,本发明第三实施例所提供的一种发光二极管芯片的固接方法,与第一实施例的发光二极管芯片的固接方法略为相近,因此,相似的流程步骤不再赘述。进一步来说,根据图2~图5与图16、图17比较所示,本发明第三实施例与第一实施的差异在于,本实施在提供电路基板10的步骤后,还进一步包括:将至少两个导电体11设置在每一个发光二极管芯片12(步骤S201B)。举例来说,在本发明的步骤S201B中,每一个发光二极管芯片12上可以设置至少二个导电体11,且导电体11可为锡球,或是其他型体且具导电性的材料。然而,本发明不以上述所举的例子为限。
接着,配合图1~图9、图16及图17所示,通过芯片取放模块M2将多个发光二极管芯片12放置在电路基板10上,并且每一个发光二极管芯片12的至少两个导电体11对应在电路基板10的导电焊点100上。然后,通过雷射光源产生模块M3所产生雷射光源L,投向发光二极管芯片12。接下来,设置在发光二极管芯片12与电路基板10之间的导电体11受到雷射光源L的照射时,会产生软化,而与电路基板10产生连接。最后,在导电体11固化后,使得发光二极管芯片12被固接在电路基板10,并通过导电体11而与电路基板10电性连接。然而,本发明不以上述所举的例子为限。
实施例的有益效果
本发明的其中一有益效果在于,本发明所提供的发光二极管芯片的固接方法,其能通过“提供一电路基板10,电路基板10包括多个导电焊点100”、“将多个导电体11分别设置在该些导电焊点100上”、“将多个发光二极管芯片12设置在电路基板10,每一个发光二极管芯片12设置在至少两个导电体11上”、“将一雷射光源产生模块M3所产生的一雷射光源L投向每一个发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上”以及“设置在发光二极管芯片12与电路基板10之间的导电体11通过雷射光源L的照射而固化”的技术方案,使得发光二极管芯片12被固接在电路基板10上。
本发明的另外一有益效果在于,本发明所提供的发光二极管芯片的固接装置Z,其能通过“一承载模块M1,其用于承载一电路基板10,电路基板10包括多个导电焊点100,多个导电体11分别设置在该些导电焊点100上”、“一雷射光源产生模块M3,其所产生的一雷射光源L投向每一个发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上”以及“设置在发光二极管芯片12与电路基板10之间的导电体11通过雷射光源L的照射而固化”的技术方案,使得发光二极管芯片12被固接在电路基板10上。
本发明的另外再一有益效果在于,本发明所提供的发光二极管芯片的固接装置Z,其能通过“固接装置Z包括一承载模块M1、一芯片取放模块M2以及一雷射光源产生模块M3”以及“雷射光源产生模块M3所产生的一雷射光源L投向一发光二极管芯片12,以使得雷射光源L穿过发光二极管芯片12且投射在至少两个导电体11上,导电体11通过雷射光源L的照射而固化”的技术方案,使得发光二极管芯片12被固接在一电路基板10上。
更进一步来说,本发明所提供的发光二极管芯片的固接方法及固接装置可通过上述技术方案,在不需要将发光二极管芯片12的基层120移除的情况下,直接利用雷射光源L穿过基层120、n型导电层N、发光层M以及p型导电层P的方式照射导电体11,以进行发光二极管芯片12的固晶制程。
以上所公开的内容仅为本发明的优选可行实施例,并非因此局限本发明的权利要求书的保护范围,所以凡是运用本发明说明书及附图内容所做的等效技术变化,均包含于本发明的权利要求书的保护范围内。
Claims (10)
1.一种发光二极管芯片的固接方法,其特征在于,该发光二极管芯片的固接方法包括:
提供一电路基板,该电路基板包括多个导电焊点;
将多个发光二极管芯片设置在该电路基板,每一该发光二极管芯片设置在至少两个导电体上;
将一雷射光源产生模块所产生的一雷射光源投向每一该发光二极管芯片,以使得该雷射光源直接穿过该发光二极管芯片后再投射在至少两个该导电体上;以及
设置在该发光二极管芯片与该电路基板之间的该导电体通过该雷射光源的照射而固化,以使得该发光二极管芯片被固接在该电路基板上。
2.根据权利要求1所述的发光二极管芯片的固接方法,其特征在于,每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度能够调整;其中,该雷射光源不穿过该电路基板,而只穿过该发光二极管芯片。
3.根据权利要求1所述的发光二极管芯片的固接方法,其特征在于,每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该基层为蓝宝石基层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度能够调整;其中,该雷射光源不穿过该电路基板,而只穿过该发光二极管芯片。
4.根据权利要求1所述的发光二极管芯片的固接方法,其特征在于,在提供该电路基板的步骤后,还进一步包括:将多个该导电体分别设置在该些导电焊点上,或将至少两个该导电体设置在每一该发光二极管芯片;其中,在该发光二极管芯片被固接在该电路基板上的步骤后,还进一步包括:将该雷射光源产生模块所产生的该雷射光源投向该发光二极管芯片与该导电体的接触接口,而降低该发光二极管芯片与该导电体之间的连接强度,以使得该发光二极管芯片容易脱离该导电体而从该电路基板上取下。
5.一种发光二极管芯片的固接装置,其特征在于,该发光二极管芯片的固接装置包括:
一承载模块,其用于承载一电路基板,该电路基板包括多个导电焊点,多个导电体分别设置在该些导电焊点上;
一芯片取放模块,其用于将多个发光二极管芯片设置在该电路基板,每一该发光二极管芯片设置在至少两个该导电体上;以及
一雷射光源产生模块,其所产生的一雷射光源投向每一该发光二极管芯片,以使得该雷射光源直接穿过该发光二极管芯片后再投射在至少两个该导电体上;
其中,设置在该发光二极管芯片与该电路基板之间的该导电体通过该雷射光源的照射而固化,以使得该发光二极管芯片被固接在该电路基板上。
6.根据权利要求5所述的发光二极管芯片的固接装置,其特征在于,每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度能够调整;其中,该雷射光源不穿过该电路基板,而只穿过该发光二极管芯片。
7.根据权利要求5所述的发光二极管芯片的固接装置,其特征在于,每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该基层为蓝宝石基层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度能够调整;其中,该雷射光源不穿过该电路基板,而只穿过该发光二极管芯片。
8.一种发光二极管芯片的固接装置,其特征在于,该发光二极管芯片的固接装置包括一承载模块、一芯片取放模块以及一雷射光源产生模块,该雷射光源产生模块所产生的一雷射光源投向一发光二极管芯片,以使得该雷射光源直接穿过该发光二极管芯片后再投射在至少两个导电体上,该导电体通过该雷射光源的照射而固化,以使得该发光二极管芯片被固接在一电路基板上。
9.根据权利要求8所述的发光二极管芯片的固接装置,其特征在于,每一该发光二极管芯片包括呈堆栈状设置的一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度能够调整;其中,该雷射光源不穿过该电路基板,而只穿过该发光二极管芯片。
10.根据权利要求8所述的发光二极管芯片的固接装置,其特征在于,每一该发光二极管芯片包括呈堆栈状设置的一基层、一n型导电层、一被该雷射光源穿过的发光层以及一p型导电层,该基层为蓝宝石基层,该n型导电层为n型氮化镓材料层或n型砷化镓材料层,该发光层为多量子阱结构层,该p型导电层为p型氮化镓材料层或p型砷化镓材料层;其中,该雷射光源的照射面积只涵盖一个该导电体或者一个该发光二极管芯片,且该雷射光源产生模块所产生的该雷射光源的强度能够调整;其中,该雷射光源不穿过该电路基板,而只穿过该发光二极管芯片。
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