US20200287352A1 - Laser heating device for mounting led - Google Patents
Laser heating device for mounting led Download PDFInfo
- Publication number
- US20200287352A1 US20200287352A1 US16/559,728 US201916559728A US2020287352A1 US 20200287352 A1 US20200287352 A1 US 20200287352A1 US 201916559728 A US201916559728 A US 201916559728A US 2020287352 A1 US2020287352 A1 US 2020287352A1
- Authority
- US
- United States
- Prior art keywords
- predetermined range
- laser source
- laser
- conductor
- layer
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Abandoned
Links
- 238000004093 laser heating Methods 0.000 title claims abstract description 47
- 239000004020 conductor Substances 0.000 claims abstract description 89
- 239000000758 substrate Substances 0.000 claims abstract description 79
- 230000003287 optical effect Effects 0.000 claims abstract description 52
- 239000000463 material Substances 0.000 claims description 26
- JBRZTFJDHDCESZ-UHFFFAOYSA-N AsGa Chemical compound [As]#[Ga] JBRZTFJDHDCESZ-UHFFFAOYSA-N 0.000 claims description 12
- 229910002601 GaN Inorganic materials 0.000 claims description 12
- 229910001218 Gallium arsenide Inorganic materials 0.000 claims description 12
- JMASRVWKEDWRBT-UHFFFAOYSA-N Gallium nitride Chemical compound [Ga]#N JMASRVWKEDWRBT-UHFFFAOYSA-N 0.000 claims description 12
- 229910052594 sapphire Inorganic materials 0.000 claims description 3
- 239000010980 sapphire Substances 0.000 claims description 3
- 238000010586 diagram Methods 0.000 description 14
- 238000000034 method Methods 0.000 description 5
- 230000008569 process Effects 0.000 description 5
- 230000004048 modification Effects 0.000 description 4
- 238000012986 modification Methods 0.000 description 4
- 229910000679 solder Inorganic materials 0.000 description 2
- 230000008901 benefit Effects 0.000 description 1
- 239000003086 colorant Substances 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006073 displacement reaction Methods 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 229910052715 tantalum Inorganic materials 0.000 description 1
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0062—Processes for devices with an active region comprising only III-V compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2222—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties
- H01S5/2227—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence
- H01S5/2228—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers having special electric properties special thin layer sequence quantum wells
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/02—Bonding areas ; Manufacturing methods related thereto
- H01L24/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L24/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23K—SOLDERING OR UNSOLDERING; WELDING; CLADDING OR PLATING BY SOLDERING OR WELDING; CUTTING BY APPLYING HEAT LOCALLY, e.g. FLAME CUTTING; WORKING BY LASER BEAM
- B23K1/00—Soldering, e.g. brazing, or unsoldering
- B23K1/005—Soldering by means of radiant energy
- B23K1/0056—Soldering by means of radiant energy soldering by means of beams, e.g. lasers, E.B.
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21V—FUNCTIONAL FEATURES OR DETAILS OF LIGHTING DEVICES OR SYSTEMS THEREOF; STRUCTURAL COMBINATIONS OF LIGHTING DEVICES WITH OTHER ARTICLES, NOT OTHERWISE PROVIDED FOR
- F21V19/00—Fastening of light sources or lamp holders
- F21V19/001—Fastening of light sources or lamp holders the light sources being semiconductors devices, e.g. LEDs
- F21V19/0015—Fastening arrangements intended to retain light sources
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
- H01L21/67115—Apparatus for thermal treatment mainly by radiation
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
- H01L21/67248—Temperature monitoring
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/75—Apparatus for connecting with bump connectors or layer connectors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies
- H01L24/799—Apparatus for disconnecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L24/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/98—Methods for disconnecting semiconductor or solid-state bodies
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L25/00—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof
- H01L25/03—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes
- H01L25/04—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers
- H01L25/075—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00
- H01L25/0753—Assemblies consisting of a plurality of individual semiconductor or other solid state devices ; Multistep manufacturing processes thereof all the devices being of a type provided for in the same subgroup of groups H01L27/00 - H01L33/00, or in a single subclass of H10K, H10N, e.g. assemblies of rectifier diodes the devices not having separate containers the devices being of a type provided for in group H01L33/00 the devices being arranged next to each other
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
- H01L33/62—Arrangements for conducting electric current to or from the semiconductor body, e.g. lead-frames, wire-bonds or solder balls
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01S—DEVICES USING THE PROCESS OF LIGHT AMPLIFICATION BY STIMULATED EMISSION OF RADIATION [LASER] TO AMPLIFY OR GENERATE LIGHT; DEVICES USING STIMULATED EMISSION OF ELECTROMAGNETIC RADIATION IN WAVE RANGES OTHER THAN OPTICAL
- H01S5/00—Semiconductor lasers
- H01S5/20—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers
- H01S5/22—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure
- H01S5/2205—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers
- H01S5/2214—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides
- H01S5/2216—Structure or shape of the semiconductor body to guide the optical wave ; Confining structures perpendicular to the optical axis, e.g. index or gain guiding, stripe geometry, broad area lasers, gain tailoring, transverse or lateral reflectors, special cladding structures, MQW barrier reflection layers having a ridge or stripe structure comprising special burying or current confinement layers based on oxides or nitrides nitrides
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F21—LIGHTING
- F21Y—INDEXING SCHEME ASSOCIATED WITH SUBCLASSES F21K, F21L, F21S and F21V, RELATING TO THE FORM OR THE KIND OF THE LIGHT SOURCES OR OF THE COLOUR OF THE LIGHT EMITTED
- F21Y2115/00—Light-generating elements of semiconductor light sources
- F21Y2115/10—Light-emitting diodes [LED]
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/02—Bonding areas; Manufacturing methods related thereto
- H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
- H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
- H01L2224/061—Disposition
- H01L2224/06102—Disposition the bonding areas being at different heights
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L2224/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
- H01L2224/13001—Core members of the bump connector
- H01L2224/13099—Material
- H01L2224/131—Material with a principal constituent of the material being a metal or a metalloid, e.g. boron [B], silicon [Si], germanium [Ge], arsenic [As], antimony [Sb], tellurium [Te] and polonium [Po], and alloys thereof
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L2224/10—Bump connectors; Manufacturing methods related thereto
- H01L2224/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L2224/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
- H01L2224/161—Disposition
- H01L2224/16151—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
- H01L2224/16221—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
- H01L2224/16225—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation
- H01L2224/16227—Disposition the bump connector connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being non-metallic, e.g. insulating substrate with or without metallisation the bump connector connecting to a bond pad of the item
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75261—Laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7525—Means for applying energy, e.g. heating means
- H01L2224/75261—Laser
- H01L2224/75263—Laser in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/757—Means for aligning
- H01L2224/75743—Suction holding means
- H01L2224/75745—Suction holding means in the upper part of the bonding apparatus, e.g. in the bonding head
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/759—Means for monitoring the connection process
- H01L2224/75901—Means for monitoring the connection process using a computer, e.g. fully- or semi-automatic bonding
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/74—Apparatus for manufacturing arrangements for connecting or disconnecting semiconductor or solid-state bodies and for methods related thereto
- H01L2224/75—Apparatus for connecting with bump connectors or layer connectors
- H01L2224/7598—Apparatus for connecting with bump connectors or layer connectors specially adapted for batch processes
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/8119—Arrangement of the bump connectors prior to mounting
- H01L2224/81192—Arrangement of the bump connectors prior to mounting wherein the bump connectors are disposed only on another item or body to be connected to the semiconductor or solid-state body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/80—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected
- H01L2224/81—Methods for connecting semiconductor or other solid state bodies using means for bonding being attached to, or being formed on, the surface to be connected using a bump connector
- H01L2224/812—Applying energy for connecting
- H01L2224/8122—Applying energy for connecting with energy being in the form of electromagnetic radiation
- H01L2224/81224—Applying energy for connecting with energy being in the form of electromagnetic radiation using a laser
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
- H01L2224/93—Batch processes
- H01L2224/95—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips
- H01L2224/97—Batch processes at chip-level, i.e. with connecting carried out on a plurality of singulated devices, i.e. on diced chips the devices being connected to a common substrate, e.g. interposer, said common substrate being separable into individual assemblies after connecting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/12—Structure, shape, material or disposition of the bump connectors prior to the connecting process
- H01L24/13—Structure, shape, material or disposition of the bump connectors prior to the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
- H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
- H01L24/10—Bump connectors ; Manufacturing methods related thereto
- H01L24/15—Structure, shape, material or disposition of the bump connectors after the connecting process
- H01L24/16—Structure, shape, material or disposition of the bump connectors after the connecting process of an individual bump connector
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2924/00—Indexing scheme for arrangements or methods for connecting or disconnecting semiconductor or solid-state bodies as covered by H01L24/00
- H01L2924/10—Details of semiconductor or other solid state devices to be connected
- H01L2924/11—Device type
- H01L2924/12—Passive devices, e.g. 2 terminal devices
- H01L2924/1204—Optical Diode
- H01L2924/12041—LED
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L2933/00—Details relating to devices covered by the group H01L33/00 but not provided for in its subgroups
- H01L2933/0008—Processes
- H01L2933/0033—Processes relating to semiconductor body packages
- H01L2933/0066—Processes relating to semiconductor body packages relating to arrangements for conducting electric current to or from the semiconductor body
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/0004—Devices characterised by their operation
- H01L33/0008—Devices characterised by their operation having p-n or hi-lo junctions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/005—Processes
- H01L33/0095—Post-treatment of devices, e.g. annealing, recrystallisation or short-circuit elimination
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
- H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
- H01L33/06—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction within the light emitting region, e.g. quantum confinement structure or tunnel barrier
Definitions
- the present disclosure relates to a laser heating device, and more particularly to a laser heating device for mounting LED.
- LED Light-emitting diodes
- a conventional display device adopts a combination of red, green, and blue light-emitting diode chips to form a full color light-emitting diode display device.
- the full-color light-emitting diode display device can respectively emit three colors of red, green and blue light through three kinds of red, green and blue light-emitting diode chips, so that a full-color light is formed to display relevant information after the mixing of light.
- the substrate carrying the LED chip needs to be removed first.
- the present disclosure provides a laser heating device for mounting LED.
- the present disclosure provides a laser heating device for mounting LED, including: a carrier substrate, an optical module, and a laser generation module.
- the carrier substrate is disposed to carry a circuit substrate, and the circuit substrate includes a plurality of conductive pads, a plurality of conductors, and a plurality of LED chips.
- the conductors are respectively disposed on the conductive pads, and each of the LED chips is disposed on at least two of the corresponding conductors.
- the optical module is disposed above the carrier substrate.
- the laser generation module is adjacent to the optical module to provide a laser source having a first predetermined range.
- the conductor is irradiated by the laser source to mount the LED chip, the first predetermined range of the laser source forms a second predetermined range by optical adjustment of the optical module, and the first predetermined range is greater than, less than, or equal to the second predetermined range.
- the present disclosure provides another laser heating device for mounting LED, including: a carrier substrate, an optical module, and a laser generation module.
- the laser generation module is adjacent to the optical module to provide a laser source having a first predetermined range.
- the conductor is irradiated by the laser source to mount the LED chip, the first predetermined range of the laser source forms a second predetermined range by optical adjustment of the optical module, and the first predetermined range is greater than, less than, or equal to the second predetermined range.
- the present disclosure provides still another laser heating device for mounting LED, including: a carrier substrate, an optical module, a laser generation module, a temperature control module and a control module.
- the carrier substrate is used to carry a plurality of conductors.
- the optical module is disposed above the carrier substrate.
- a laser generation module is adjacent to the optical module to provide a laser source having a first predetermined range.
- the temperature control module is adjacent to the carrier substrate for detecting the temperature of the conductor to obtain a conductor temperature information.
- the control module is electrically connected between the temperature control module and the laser generation module.
- the first predetermined range of the laser source is optically adjusted by the optical module to form a second predetermined range.
- the first predetermined range is greater than, less than, or equal to the second predetermined range, and the first predetermined range has the same or a different shape as the second predetermined range.
- the control module adjusts the power output by the laser generation module according to the conductor temperature information.
- the laser heating device for mounting LED has the technical features of “a laser heating device for mounting LED, including: a carrier substrate, an optical module, and a laser generation module,” “the optical module being disposed above the carrier substrate,” “the laser generation module being adjacent to the optical module to provide a laser source having a first predetermined range” and “the conductor being irradiated by the laser source to mount the LED chip, the first predetermined range of the laser source forming a second predetermined range by optical adjustment of the optical module, and the first predetermined range being greater than, less than, or equal to the second predetermined range” so that the LED chip can be mounted on a circuit substrate.
- FIG. 1 is a first operational schematic diagram of a laser heating device for mounting LED according to a first embodiment of the present disclosure.
- FIG. 2 is a second operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 3 is a third operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 4 is a fourth operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 5 is a fifth operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 6 is an enlarged schematic view of a portion VI of FIG. 5 .
- FIG. 7 is a schematic diagram of irradiation of a second predetermined range of a laser source according to the first embodiment of the present disclosure.
- FIG. 8 is a sixth operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 9 is a seventh operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 10 is a eighth operational schematic diagram of the laser heating device for mounting LED according to the first embodiment of the present disclosure.
- FIG. 11 is a first operational schematic diagram of a laser heating device for mounting LED according to a second embodiment of the present disclosure.
- FIG. 12 is a second operational schematic diagram of the laser heating device for mounting LED according to the second embodiment of the present disclosure.
- FIG. 13 is a schematic structural view of a partial module of a laser heating device for mounting LED according to a third embodiment of the present disclosure.
- FIG. 14 is a functional block diagram of the laser heating device for mounting LED according to the third embodiment of the present disclosure.
- FIG. 15 is a first operational schematic diagram of a laser heating device for mounting LED according to a fourth embodiment of the present disclosure.
- FIG. 16 is a second operational schematic diagram of the laser heating device for mounting LED according to the fourth embodiment of the present disclosure.
- Numbering terms such as “first”, “second” or “third” can be used to describe various components, signals or the like, which are for distinguishing one component/signal from another one only, and are not intended to, nor should be construed to impose any substantive limitations on the components, signals or the like.
- a first embodiment of the present disclosure provides a laser heating device Z for mounting LED, including: a carrier substrate M 1 , an optical module M 2 , and a laser generation module M 3 .
- the carrier substrate M 1 carries a circuit substrate 10
- the load module M 1 can be a stage device with a displacement function, but is not limited thereto.
- the circuit substrate 10 includes a plurality of conductive pads 100 , a plurality of conductors 101 , and a plurality of LED chips 102 .
- the conductors 101 are respectively disposed on the conductive pads 100 .
- at least one of the conductors 101 can be disposed on each of the conductive pads 100 , and the conductor 101 can be a solder ball or other type of conductive material, but the present disclosure is not limited thereto.
- the LED chips 102 are disposed on the circuit substrate 10 , and each of the LED chips 102 is disposed on at least two conductors 101 .
- the laser heating device Z for mounting LED provided by the present disclosure further includes: a pick and place module M 4 adjacent to the carrier substrate M 1 for placing each of the LED chips 102 on the corresponding at least two of the conductors 101 .
- the present disclosure can also place a plurality of LED chips 102 on the circuit substrate 10 by pick and place module M 4 , and each of the LED chips 102 corresponds to at least two conductors 101 .
- the pick and place module M 4 can be a vacuum nozzle or any kind of pick and place machine.
- the present disclosure is not limited thereto.
- the optical module M 2 is disposed above the carrier substrate M 1 and is located between the laser generation module M 3 and the circuit substrate 10 .
- the optical module M 2 may be a lens structure or a light guide plate structure, but is not limited thereto.
- the laser source generating module M 3 can provide a laser source L having a first predetermined range R 1 and direct the light from the light source to the optical module M 2 .
- the first predetermined range R 1 of the laser source L is formed by the optical adjustment of the optical module M 2 to form a second predetermined range R 2 .
- the first predetermined range R 1 may be greater than, less than, or equal to the second predetermined range R 2 .
- the first predetermined range R 1 may be smaller than the second predetermined range R 2 , but the present disclosure is not limited thereto.
- the first predetermined range R 1 and the second predetermined range R 2 may have the same or different shapes.
- each of the LED chips 102 may be a micro-semiconductor light-emitting element (Micro LED) including an n-type conductive layer N disposed in a stack, a light-emitting layer M passed through by the laser source L, and a p-type conductive layer P.
- Micro LED micro-semiconductor light-emitting element
- the n-type conductive layer N may be an n-type gallium nitride material layer or an n-type gallium arsenide material layer
- the light-emitting layer M is a multi-quantum well structure layer
- the p-type conductive layer P may be a p-type gallium nitride material layer or a p-type gallium arsenide material layer, but is not limited thereto.
- the above-mentioned examples are only one of the possible embodiments and the present disclosure is not limited thereto.
- the second predetermined range R 2 of the laser source L may cover a plurality of LED chips 102 .
- the second predetermined range R 2 may cover 4 ⁇ 4 LED chips 102 , but the present disclosure is not limited thereto.
- the intensity 3 of the laser source L of the module M of the present disclosure may be adjusted by adjusting the laser source, so that the laser source L 3 generated by the laser source generating module M 3 passes only through the LED chip 102 without passing through the circuit substrate 10 .
- the above-mentioned examples are only one of the possible embodiments and the present disclosure is not limited thereto.
- the conductor 101 disposed between the LED chip 102 and the circuit substrate 10 is cured by the irradiation of the laser source L, so that the LED chip 102 is mounted onto the circuit substrate 10 .
- the conductor 101 disposed between the LED chip 102 and the circuit substrate 10 is irradiated by the laser source L, the conductor 101 is softened, and a connection with the LED chip 102 is made.
- the LED chip 102 is mounted onto the circuit substrate 10 and electrically connected to the circuit substrate 10 through the conductor 101 .
- the present disclosure is not limited thereto.
- the laser heating device Z for mounting LED provided by the present disclosure can further project the light from the laser source L generated by the laser source generating module M 3 to the contact interface F of the LED chip 102 and the conductor 101 , thereby reducing the connection strength between the LED chip 102 and the conductor 101 .
- the LED chip 102 is removed from the circuit substrate 10 so that the LED chip 102 is easily detached from the conductor 101 .
- the present disclosure can also direct the laser source L generated by the laser source generating module M 3 to the contact interface F between the LED chip 102 and the cured conductor 101 so as to soften part of the conductor 101 close to the contact interface F, and reduce the connection strength and bonding force between the LED chip 102 and the conductor 101 , so that the LED chip 102 can be easily detached from the conductor 101 and removed from the circuit substrate 10 . Then, at least two old conductors 101 separate from the LED chip 102 can be removed from the circuit substrate 10 using a special instrument (such as a scraper or grinder) to facilitate repositioning of the new conductor 101 .
- a special instrument such as a scraper or grinder
- the present disclosure provides a laser heating device Z for mounting LED, including: a circuit substrate 10 , an optical module M 2 , and a laser generation module M 3 .
- the circuit substrate 10 is used to carry a plurality of conductors 101 and a plurality of LED chips 102 .
- the optical module M 2 is disposed above the circuit substrate 10 .
- the laser generation module M 3 is adjacent to the optical module M 2 to provide a laser source L having a first predetermined range R 1 .
- the conductor 101 is irradiated by the laser source L to fix the LED chip 102 , and the first predetermined range R 1 of the laser source L is optically adjusted by the optical module M 2 to form a second predetermined range R 2 , which is greater than, less than or equal to the second predetermined range R 2 .
- a second embodiment of the present disclosure provides a laser heating device Z for mounting LED that is similar to that described in the first embodiment, and therefore similar steps in the process will not be described again. Further, with reference to FIG. 6 and according to FIG. 11 and FIG. 12 and FIG. 5 and FIG.
- each of the LED chips 102 of the present embodiment may be a sub-millimeter light-emitting diode (Mini LED) including a base layer 1020 disposed in a stacked manner, an n-type conductive layer N, a light-emitting layer M passed through by the laser source L and a p-type conductive layer P.
- Min LED sub-millimeter light-emitting diode
- the base layer 1020 is a sapphire material layer
- the n-type conductive layer N may be an n-type gallium nitride material layer or an n-type gallium arsenide material layer
- the light-emitting layer M is a multi-quantum well structure layer
- the p-type conductive layer P may be a p-type gallium nitride material layer or a p-type gallium arsenide material layer, but the present disclosure is not limited thereto.
- the base layer 1020 may also be a quartz base layer, a glass base layer, a tantalum base layer, or a base layer of any material.
- the above-mentioned examples are only one of the possible embodiments and the present disclosure is not limited thereto.
- the light from the laser source L of the second predetermined range R 2 is directed to each of the LED chips 102 , the light passes through the base layer 1020 , the n-type conductive layer N, the light-emitting layer M, and the p-type conductive layer P, and is projected onto at least two conductors 101 of the circuit substrate 10 .
- the conductor 101 disposed between the LED chip 102 and the circuit substrate 10 is cured by irradiation of the laser source L so that the LED chip 102 is mounted on the circuit substrate 10 .
- the above-mentioned examples are only one of the possible embodiments and the present disclosure is not limited thereto.
- a third embodiment of the present disclosure provides a laser heating device Z for mounting LED that is similar to that described in the first embodiment, and therefore similar steps in the process will not be described again. Further, the difference between the third embodiment and the first embodiment of the present disclosure is that, the laser heating device Z for mounting LED provided by the present disclosure further includes: a temperature control module M 5 and a control module M 6 .
- the temperature control module M 5 is adjacent to the carrier substrate M 1 for detecting the temperature of the conductor 101 to obtain a conductor temperature information.
- the control module M 6 is electrically connected between the temperature control module M 5 and the laser generation module M 3 .
- the control module M 6 adjusts the power output by the laser generation module M 3 according to the conductor temperature information.
- the temperature control module M 5 can be a temperature sensor or a temperature controller, but the present disclosure is not limited thereto.
- a sensing end of the temperature control module M 5 may be disposed on the carrier substrate M 1 and adjacent to the circuit substrate 10 , or the sensing end of the temperature control module M 5 may be located outside the carrier substrate M 1 and adjacent to one or a part of the conductor 101 on the circuit substrate 10 .
- the control module M 6 is electrically connected to the carrier substrate M 1 , the laser generation module M 3 , the pick and place module M 4 , and the temperature control module M 5 . Therefore, at the same time as or after the laser source L is projected onto the conductor 101 on the circuit substrate 10 , the temperature of the conductor 101 can be detected by the temperature control module M 5 to obtain a conductor temperature information.
- control module M 6 can determine whether the power output by the laser generation module M 3 is sufficient, too low or too high according to the conductor temperature information (for example, comparing the conductor temperature information with a preset temperature information, but the present disclosure is not limited thereto), and then the power output by the laser generation module M 3 is appropriately adjusted.
- the conductor temperature information for example, comparing the conductor temperature information with a preset temperature information, but the present disclosure is not limited thereto.
- the present disclosure further provides a laser heating device Z for mounting LED, including: a circuit substrate 10 , an optical module M 2 , a laser generation module M 3 , a temperature control module M 5 , and a control module M 6 .
- the circuit substrate 10 is used to carry a plurality of conductors 101 .
- the optical module M 2 is disposed above the circuit substrate 10 .
- the laser generation module M 3 is adjacent to the optical module M 2 to provide a laser source L having a first predetermined range R 1 .
- the temperature control module M 5 is adjacent to the circuit substrate 10 for detecting the temperature of the conductor 101 to obtain a conductor temperature information.
- the control module M 6 is electrically connected between the temperature control module M 5 and the laser generation module M 3 .
- the first predetermined range R 1 of the laser source L is optically adjusted by the optical module M 2 to form a second predetermined range R 2 .
- the first predetermined range R 1 is greater than, less than or equal to the second predetermined range R 2 , and the first predetermined range R 1 and the second predetermined range R 2 have the same or different shapes.
- the control module M 6 adjusts the power output by the laser generation module M 3 according to the conductor temperature information.
- a fourth embodiment of the present disclosure provides a laser heating device Z for mounting LED that is similar to that described in the first embodiment, and therefore similar steps in the process will not be described again. Further, according to FIG. 15 , FIG. 2 and FIG. 3 , the difference between the fourth embodiment and the first embodiment of the present disclosure is that the laser heating device Z for mounting LED provided by the present disclosure can also have at least two conductors 101 disposed on each of the LED chips 102 .
- At least two conductors 101 may be disposed on each of the LED chips 102 , and the conductor 101 may be a solder ball, or other conductive materials having different shapes or structures, but the present disclosure is not limited thereto.
- a plurality of LED chips 102 are placed on the circuit substrate 10 by a pick and place module M 4 , and at least two conductors 101 of each of the LED chips 102 correspond to the conductive pads 100 of the circuit substrate 10 . Then, the light from the laser source L generated by the laser generation module is directed to the LED chip 102 .
- the conductor 101 disposed between the LED chip 102 and the circuit substrate 10 is irradiated by the laser source L, the conductor 101 is softened, and a connection with the circuit substrate 10 is made. Finally, after the conductor 101 is cured, the LED chip 102 is mounted onto the circuit substrate 10 and electrically connected to the circuit substrate 10 through the conductor 101 .
- the above-mentioned examples are only one of the possible embodiments and the present disclosure is not limited thereto.
- the laser heating device for mounting LED Z has the technical features of “a laser heating device Z for mounting LED, including: a carrier substrate M 1 , an optical module M 2 , and a laser generation module M 3 ,” “the optical module M 2 being disposed above the carrier substrate M 1 ,” “the laser generation module M 3 being adjacent to the optical module M 2 to provide a laser source L having a first predetermined range R 1 ” and “the conductor 101 being irradiated by the laser source L to mount the LED chip 102 , the first predetermined range R 1 of the laser source L forming a second predetermined range R 2 by optical adjustment of the optical module M 2 , and the first predetermined range R 1 being greater than, less than, or equal to the second predetermined range R 2 ” so that the LED chip can be mounted on a circuit substrate 10 .
- the laser heating device Z for mounting LED provided by the present disclosure can convert the first predetermined range R 1 of the laser source L into the second predetermined range R 2 by using the optical adjustment of the optical module M 2 by the above-mentioned technical solution, so as to conduct the solid crystal process of the LED chip 102 .
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Optics & Photonics (AREA)
- Geometry (AREA)
- Electromagnetism (AREA)
- General Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Toxicology (AREA)
- Health & Medical Sciences (AREA)
- Led Device Packages (AREA)
- Semiconductor Lasers (AREA)
- Electric Connection Of Electric Components To Printed Circuits (AREA)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US17/984,263 US20230068569A1 (en) | 2019-03-06 | 2022-11-10 | Method for soldering electronic component and method for manufacturing led display |
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
TW108107398A TWI693119B (zh) | 2019-03-06 | 2019-03-06 | 應用於固接led的雷射加熱裝置 |
TW108107398 | 2019-03-06 |
Related Child Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/984,263 Continuation US20230068569A1 (en) | 2019-03-06 | 2022-11-10 | Method for soldering electronic component and method for manufacturing led display |
Publications (1)
Publication Number | Publication Date |
---|---|
US20200287352A1 true US20200287352A1 (en) | 2020-09-10 |
Family
ID=71896077
Family Applications (2)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US16/559,728 Abandoned US20200287352A1 (en) | 2019-03-06 | 2019-09-04 | Laser heating device for mounting led |
US17/984,263 Pending US20230068569A1 (en) | 2019-03-06 | 2022-11-10 | Method for soldering electronic component and method for manufacturing led display |
Family Applications After (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
US17/984,263 Pending US20230068569A1 (en) | 2019-03-06 | 2022-11-10 | Method for soldering electronic component and method for manufacturing led display |
Country Status (3)
Country | Link |
---|---|
US (2) | US20200287352A1 (zh) |
CN (1) | CN111668132A (zh) |
TW (1) | TWI693119B (zh) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TWI751449B (zh) * | 2019-11-12 | 2022-01-01 | 博隆精密科技股份有限公司 | 雷射加工佈線方法 |
TWI747585B (zh) * | 2020-10-30 | 2021-11-21 | 昱凱科技股份有限公司 | 顯示裝置的製造方法 |
Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4657169A (en) * | 1984-06-11 | 1987-04-14 | Vanzetti Systems, Inc. | Non-contact detection of liquefaction in meltable materials |
US20080047939A1 (en) * | 2006-08-25 | 2008-02-28 | Stefan Hummelt | Process and apparatus for joining at least two elements |
Family Cites Families (17)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH052111U (ja) * | 1991-06-19 | 1993-01-14 | 日本電気レーザ機器エンジニアリング株式会社 | レーザ出射光学機構 |
JP2000033489A (ja) * | 1998-07-22 | 2000-02-02 | Mitsubishi Electric Corp | レーザ装置 |
JP2002111197A (ja) * | 2000-10-02 | 2002-04-12 | Sony Corp | 部品交換方法および部品交換装置 |
JP3925169B2 (ja) * | 2001-11-26 | 2007-06-06 | 株式会社デンソー | レーザー光による材料の同時一括溶融方法及び装置 |
JP2006305608A (ja) * | 2005-04-28 | 2006-11-09 | Toshiba Corp | レーザ加工装置、及びレーザ加工方法 |
CN102280393A (zh) * | 2011-07-25 | 2011-12-14 | 上海祯显电子科技有限公司 | 一种芯片的焊接方法 |
JP6311858B2 (ja) * | 2013-12-12 | 2018-04-18 | 澁谷工業株式会社 | ボンディング装置 |
CN104759723B (zh) * | 2015-04-01 | 2017-03-01 | 华中科技大学 | 一种激光焊接装置与方法 |
CN107833526B (zh) * | 2016-09-15 | 2021-05-28 | 伊乐视有限公司 | 拾取-移除系统以及发光显示器的修复方法 |
KR101950725B1 (ko) * | 2016-10-20 | 2019-02-21 | 크루셜머신즈 주식회사 | 광 균질화 모듈 및 그를 포함하는 레이저 본딩장치 |
TWI616996B (zh) * | 2016-10-21 | 2018-03-01 | 矽品精密工業股份有限公司 | 半導體組件的回焊方法 |
TWI662638B (zh) * | 2017-04-21 | 2019-06-11 | 台灣愛司帝科技股份有限公司 | 半導體晶片修補方法以及半導體晶片修補裝置 |
KR20190019745A (ko) * | 2017-08-18 | 2019-02-27 | 주식회사 루멘스 | 발광소자 및 그 제조방법 |
CN107511551B (zh) * | 2017-08-31 | 2020-02-18 | 歌尔股份有限公司 | 锡球激光焊接方法 |
TWM554224U (zh) * | 2017-10-02 | 2018-01-11 | 盟立自動化股份有限公司 | 雷射輔助接合裝置 |
CN108346597B (zh) * | 2017-12-28 | 2021-01-08 | 大族激光科技产业集团股份有限公司 | 一种真空加热系统、晶片剥离装置及方法 |
CN108873985A (zh) * | 2018-08-06 | 2018-11-23 | 武汉博联特科技有限公司 | 一种激光软钎焊的温度控制方法及系统 |
-
2019
- 2019-03-06 TW TW108107398A patent/TWI693119B/zh active
- 2019-03-18 CN CN201910203644.3A patent/CN111668132A/zh active Pending
- 2019-09-04 US US16/559,728 patent/US20200287352A1/en not_active Abandoned
-
2022
- 2022-11-10 US US17/984,263 patent/US20230068569A1/en active Pending
Patent Citations (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US4657169A (en) * | 1984-06-11 | 1987-04-14 | Vanzetti Systems, Inc. | Non-contact detection of liquefaction in meltable materials |
US20080047939A1 (en) * | 2006-08-25 | 2008-02-28 | Stefan Hummelt | Process and apparatus for joining at least two elements |
Also Published As
Publication number | Publication date |
---|---|
TWI693119B (zh) | 2020-05-11 |
US20230068569A1 (en) | 2023-03-02 |
CN111668132A (zh) | 2020-09-15 |
TW202033300A (zh) | 2020-09-16 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
US7947947B2 (en) | LED-based light module package including a ceramic layer and a light sensor | |
US7922352B2 (en) | Device and method for emitting output light using multiple light sources with photoluminescent material | |
US20180206411A1 (en) | Led flip chip plant grow light | |
KR101662038B1 (ko) | 칩 패키지 | |
US20230068569A1 (en) | Method for soldering electronic component and method for manufacturing led display | |
CN109994589B (zh) | 发光器件封装 | |
US7402842B2 (en) | Light emitting diode package | |
US10910530B2 (en) | LED chip mounting method and device | |
US20070158666A1 (en) | Backlight Unit | |
TW201909451A (zh) | 發光裝置封裝 | |
US20200135996A1 (en) | Led mounting method and device | |
KR102472710B1 (ko) | 반도체 소자 패키지 | |
KR101578768B1 (ko) | 발광 소자 패키지 모듈과, 백라이트 유닛 및 조명 장치 | |
CN102339822A (zh) | 发光二极管的封装结构 | |
US20080298061A1 (en) | Light Emitting Module and Manufacturing Method | |
US20200365426A1 (en) | High-frequency heating device for mounting led | |
US11742456B2 (en) | Chip-detecting method, chip-detecting structure and chip-carrying structure | |
CN217641277U (zh) | 用于固接电子组件的装置 | |
KR20150024518A (ko) | 발광 소자 패키지 및 이를 갖는 백라이트 유닛 | |
KR101550778B1 (ko) | 발광 소자 패키지, 백라이트 유닛 및 조명 장치 | |
KR102509089B1 (ko) | 반도체 소자 패키지 | |
KR102509075B1 (ko) | 반도체 소자 패키지 | |
TW202341413A (zh) | 半導體光耦合器 | |
KR20150093038A (ko) | 발광 소자 패키지 모듈과, 백라이트 유닛 및 조명 장치 | |
KR20110129136A (ko) | 발광 장치 |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
AS | Assignment |
Owner name: ASTI GLOBAL INC., TAIWAN, TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:LIAO, CHIEN-SHOU;REEL/FRAME:050260/0640 Effective date: 20190827 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: DOCKETED NEW CASE - READY FOR EXAMINATION |
|
AS | Assignment |
Owner name: STROKE PRECISION ADVANCED ENGINEERING CO., LTD., TAIWAN Free format text: ASSIGNMENT OF ASSIGNORS INTEREST;ASSIGNOR:ASTI GLOBAL INC., TAIWAN;REEL/FRAME:059952/0616 Effective date: 20220413 |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: RESPONSE TO NON-FINAL OFFICE ACTION ENTERED AND FORWARDED TO EXAMINER |
|
STPP | Information on status: patent application and granting procedure in general |
Free format text: NON FINAL ACTION MAILED |
|
STCB | Information on status: application discontinuation |
Free format text: ABANDONED -- FAILURE TO RESPOND TO AN OFFICE ACTION |