TWI727461B - 基板處理方法以及基板處理裝置 - Google Patents

基板處理方法以及基板處理裝置 Download PDF

Info

Publication number
TWI727461B
TWI727461B TW108137337A TW108137337A TWI727461B TW I727461 B TWI727461 B TW I727461B TW 108137337 A TW108137337 A TW 108137337A TW 108137337 A TW108137337 A TW 108137337A TW I727461 B TWI727461 B TW I727461B
Authority
TW
Taiwan
Prior art keywords
substrate
nozzle
nozzle portion
processing
outermost position
Prior art date
Application number
TW108137337A
Other languages
English (en)
Chinese (zh)
Other versions
TW202025280A (zh
Inventor
加藤雅彦
Original Assignee
日商斯庫林集團股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 日商斯庫林集團股份有限公司 filed Critical 日商斯庫林集團股份有限公司
Publication of TW202025280A publication Critical patent/TW202025280A/zh
Application granted granted Critical
Publication of TWI727461B publication Critical patent/TWI727461B/zh

Links

Images

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
    • H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
    • H01L21/321—After treatment
    • H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
    • H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
    • H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/6708—Apparatus for fluid treatment for etching for wet etching using mainly spraying means, e.g. nozzles
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
    • H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
    • H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
TW108137337A 2018-11-07 2019-10-16 基板處理方法以及基板處理裝置 TWI727461B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2018209656A JP7088810B2 (ja) 2018-11-07 2018-11-07 基板処理方法および基板処理装置
JP2018-209656 2018-11-07

Publications (2)

Publication Number Publication Date
TW202025280A TW202025280A (zh) 2020-07-01
TWI727461B true TWI727461B (zh) 2021-05-11

Family

ID=70611929

Family Applications (1)

Application Number Title Priority Date Filing Date
TW108137337A TWI727461B (zh) 2018-11-07 2019-10-16 基板處理方法以及基板處理裝置

Country Status (5)

Country Link
JP (1) JP7088810B2 (ja)
KR (2) KR102572925B1 (ja)
CN (1) CN112997279A (ja)
TW (1) TWI727461B (ja)
WO (1) WO2020095598A1 (ja)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102421919B1 (ko) * 2019-12-27 2022-07-18 가부시키가이샤 스크린 홀딩스 기판 처리 장치, 기판 처리 방법, 기판 처리 시스템, 및 학습용 데이터의 생성 방법
JP2023042255A (ja) * 2021-09-14 2023-03-27 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理方法

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1898453A1 (en) * 2005-06-23 2008-03-12 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US20140090669A1 (en) * 2012-09-28 2014-04-03 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
TW201802915A (zh) * 2016-02-25 2018-01-16 Shibaura Mechatronics Corp 基板處理裝置、基板處理方法及基板之製造方法
TW201832013A (zh) * 2013-11-13 2018-09-01 日商東京威力科創股份有限公司 基板洗淨方法、基板洗淨系統及記憶媒體
TW201836049A (zh) * 2017-02-28 2018-10-01 日商斯庫林集團股份有限公司 基板處理裝置以及基板處理方法

Family Cites Families (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW346649B (en) * 1996-09-24 1998-12-01 Tokyo Electron Co Ltd Method for wet etching a film
JP3434750B2 (ja) * 1999-09-30 2003-08-11 Ｎｅｃエレクトロニクス株式会社 洗浄装置のライン構成及びその設計方法
JP4586274B2 (ja) 2001-01-17 2010-11-24 ソニー株式会社 半導体基板の洗浄装置
KR100513276B1 (ko) * 2003-05-23 2005-09-09 삼성전자주식회사 웨이퍼 고정 스핀 척
JP4324527B2 (ja) * 2004-09-09 2009-09-02 東京エレクトロン株式会社 基板洗浄方法及び現像装置
JP2007165629A (ja) 2005-12-14 2007-06-28 Matsushita Electric Ind Co Ltd エッチング方法及びエッチング装置
JP5134774B2 (ja) 2006-01-16 2013-01-30 ルネサスエレクトロニクス株式会社 半導体装置の製造方法
JP2007311439A (ja) * 2006-05-17 2007-11-29 Dainippon Screen Mfg Co Ltd 基板処理方法および基板処理装置
JP5747842B2 (ja) 2012-02-27 2015-07-15 東京エレクトロン株式会社 液処理装置、液処理方法及び記憶媒体
JP5716696B2 (ja) * 2012-03-05 2015-05-13 東京エレクトロン株式会社 液処理装置、液処理方法及びコンピュータ読取可能な記憶媒体
JP6066873B2 (ja) * 2013-09-10 2017-01-25 東京エレクトロン株式会社 基板処理方法、プログラム、コンピュータ記憶媒体及び基板処理システム
KR102030681B1 (ko) * 2014-09-02 2019-10-10 주식회사 제우스 기판 액처리 장치 및 기판 액처리 방법
JP2016184662A (ja) 2015-03-26 2016-10-20 株式会社ディスコ 洗浄装置
JP6910164B2 (ja) 2017-03-01 2021-07-28 東京エレクトロン株式会社 基板処理装置および基板処理方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1898453A1 (en) * 2005-06-23 2008-03-12 Tokyo Electron Limited Substrate processing method and substrate processing apparatus
US20140090669A1 (en) * 2012-09-28 2014-04-03 Dainippon Screen Mfg. Co., Ltd. Substrate treatment method and substrate treatment apparatus
TW201832013A (zh) * 2013-11-13 2018-09-01 日商東京威力科創股份有限公司 基板洗淨方法、基板洗淨系統及記憶媒體
TW201802915A (zh) * 2016-02-25 2018-01-16 Shibaura Mechatronics Corp 基板處理裝置、基板處理方法及基板之製造方法
TW201836049A (zh) * 2017-02-28 2018-10-01 日商斯庫林集團股份有限公司 基板處理裝置以及基板處理方法

Also Published As

Publication number Publication date
TW202025280A (zh) 2020-07-01
JP2020077735A (ja) 2020-05-21
JP7088810B2 (ja) 2022-06-21
KR102572925B1 (ko) 2023-08-30
KR102609673B1 (ko) 2023-12-04
WO2020095598A1 (ja) 2020-05-14
KR20230129580A (ko) 2023-09-08
KR20210066897A (ko) 2021-06-07
CN112997279A (zh) 2021-06-18

Similar Documents

Publication Publication Date Title
TWI613707B (zh) 基板處理裝置及基板處理方法
TWI748628B (zh) 基板處理方法及基板處理裝置
JP4005326B2 (ja) 基板処理装置および基板処理方法
US7803230B2 (en) Substrate cleaning apparatus, substrate cleaning method, and medium for recording program used for the method
WO2015146546A1 (ja) 基板処理装置および基板処理方法
KR102027725B1 (ko) 기판 처리 장치 및 기판 처리 방법
TWI619190B (zh) Liquid processing method, memory medium and liquid processing device
US11967509B2 (en) Substrate processing apparatus, substrate processing method, and storage medium
JP4988510B2 (ja) 基板処理装置および基板処理方法
JP2006041444A (ja) 基板処理装置
JP5954862B2 (ja) 基板処理装置
TWI727461B (zh) 基板處理方法以及基板處理裝置
TWI698926B (zh) 基板處理方法及基板處理裝置
US20170148648A1 (en) Substrate processing apparatus
JP2020115513A (ja) 基板処理方法及び基板処理装置
JP7285741B2 (ja) 基板処理方法および基板処理装置
JP6949510B2 (ja) 基板処理装置および基板処理方法
KR20130111176A (ko) 기판 처리 방법 및 기판 처리 장치
KR20200124166A (ko) 기판 처리 방법 및 기판 처리 장치
CN112885739A (zh) 基片处理装置和基片处理方法
US20190252181A1 (en) Method of processing semiconductor substrate
JP6949509B2 (ja) 基板処理装置および基板処理方法
US11779967B2 (en) Particle removing assembly and method of servicing assembly
US20240001414A1 (en) Particle removing assembly and method of servicing assembly
JP2015192049A (ja) 基板処理装置および基板処理方法