TWI714591B - 用於處理具有多晶磨光之半導體晶圓之方法 - Google Patents

用於處理具有多晶磨光之半導體晶圓之方法 Download PDF

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Publication number
TWI714591B
TWI714591B TW105116794A TW105116794A TWI714591B TW I714591 B TWI714591 B TW I714591B TW 105116794 A TW105116794 A TW 105116794A TW 105116794 A TW105116794 A TW 105116794A TW I714591 B TWI714591 B TW I714591B
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TW
Taiwan
Prior art keywords
wafer
polishing
silicon layer
pad
contour
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Application number
TW105116794A
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English (en)
Chinese (zh)
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TW201705254A (zh
Inventor
國強 張
馬可Ｓ 科魯克斯
翠西Ｍ 雷根
Original Assignee
環球晶圓股份有限公司
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Publication of TW201705254A publication Critical patent/TW201705254A/zh
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    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B1/00—Processes of grinding or polishing; Use of auxiliary equipment in connection with such processes
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B53/00—Devices or means for dressing or conditioning abrasive surfaces
    • B24B53/017—Devices or means for dressing, cleaning or otherwise conditioning lapping tools
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/402—Chemomechanical polishing [CMP] of semiconductor materials
    • B—PERFORMING OPERATIONS; TRANSPORTING
    • B24—GRINDING; POLISHING
    • B24B—MACHINES, DEVICES, OR PROCESSES FOR GRINDING OR POLISHING; DRESSING OR CONDITIONING OF ABRADING SURFACES; FEEDING OF GRINDING, POLISHING, OR LAPPING AGENTS
    • B24B29/00—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents
    • B24B29/02—Machines or devices for polishing surfaces on work by means of tools made of soft or flexible material with or without the application of solid or liquid polishing agents designed for particular workpieces
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3402—Deposited materials, e.g. layers characterised by the chemical composition
    • H10P14/3404—Deposited materials, e.g. layers characterised by the chemical composition being Group IVA materials
    • H10P14/3411—Silicon, silicon germanium or germanium
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/20—Formation of materials, e.g. in the shape of layers or pillars of semiconductor materials
    • H10P14/34—Deposited materials, e.g. layers
    • H10P14/3451—Structure
    • H10P14/3452—Microstructure
    • H10P14/3456—Polycrystalline
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P52/00—Grinding, lapping or polishing of wafers, substrates or parts of devices
    • H10P52/40—Chemomechanical polishing [CMP]
    • H10P52/403—Chemomechanical polishing [CMP] of conductive or resistive materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0428—Apparatus for mechanical treatment or grinding or cutting
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/23—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by multiple measurements, corrections, marking or sorting processes
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P90/00—Preparation of wafers not covered by a single main group of this subclass, e.g. wafer reinforcement
    • H10P90/12—Preparing bulk and homogeneous wafers
    • H10P90/123—Preparing bulk and homogeneous wafers by grinding or lapping
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects

Landscapes

  • Engineering & Computer Science (AREA)
  • Mechanical Engineering (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Grinding-Machine Dressing And Accessory Apparatuses (AREA)
  • Constituent Portions Of Griding Lathes, Driving, Sensing And Control (AREA)
TW105116794A 2015-05-29 2016-05-27 用於處理具有多晶磨光之半導體晶圓之方法 TWI714591B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201562168247P 2015-05-29 2015-05-29
US62/168,247 2015-05-29

Publications (2)

Publication Number Publication Date
TW201705254A TW201705254A (zh) 2017-02-01
TWI714591B true TWI714591B (zh) 2021-01-01

Family

ID=56108731

Family Applications (2)

Application Number Title Priority Date Filing Date
TW105116794A TWI714591B (zh) 2015-05-29 2016-05-27 用於處理具有多晶磨光之半導體晶圓之方法
TW109141370A TWI742938B (zh) 2015-05-29 2016-05-27 用於處理具有多晶磨光之半導體晶圓之方法

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW109141370A TWI742938B (zh) 2015-05-29 2016-05-27 用於處理具有多晶磨光之半導體晶圓之方法

Country Status (6)

Country Link
US (2) US10699908B2 (enExample)
EP (2) EP3576136A1 (enExample)
JP (2) JP6613470B2 (enExample)
CN (2) CN114102269B (enExample)
TW (2) TWI714591B (enExample)
WO (1) WO2016196216A1 (enExample)

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JP6732382B2 (ja) * 2016-10-12 2020-07-29 株式会社ディスコ 加工装置及び被加工物の加工方法
CN110497303B (zh) * 2018-05-16 2024-06-07 长鑫存储技术有限公司 化学机械研磨制程方法及系统
JP7258443B2 (ja) * 2019-10-02 2023-04-17 株式会社ディスコ ドレッシング工具
US12482662B2 (en) * 2022-02-21 2025-11-25 Globalwafers Co., Ltd. Systems and methods for producing epitaxial wafers
JP7757902B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置
JP7757903B2 (ja) * 2022-08-09 2025-10-22 株式会社Sumco ウェーハの片面研磨方法、ウェーハの製造方法、およびウェーハの片面研磨装置

Citations (3)

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EP1017090A1 (en) * 1996-09-20 2000-07-05 Speedfam Co., Ltd. Semiconductor wafer polishing device
US20060046371A1 (en) * 2004-09-01 2006-03-02 Moon Jae Y Methods of forming gate electrodes in semiconductor devices
US20120315829A1 (en) * 2011-06-08 2012-12-13 Mutsumi Tanikawa Method and apparatus for conditioning a polishing pad

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EP1017090A1 (en) * 1996-09-20 2000-07-05 Speedfam Co., Ltd. Semiconductor wafer polishing device
US20060046371A1 (en) * 2004-09-01 2006-03-02 Moon Jae Y Methods of forming gate electrodes in semiconductor devices
US20120315829A1 (en) * 2011-06-08 2012-12-13 Mutsumi Tanikawa Method and apparatus for conditioning a polishing pad

Also Published As

Publication number Publication date
JP6955537B2 (ja) 2021-10-27
TW201705254A (zh) 2017-02-01
WO2016196216A1 (en) 2016-12-08
CN114102269B (zh) 2024-09-24
TW202113960A (zh) 2021-04-01
CN107851579B (zh) 2021-11-09
US11355346B2 (en) 2022-06-07
EP3304580A1 (en) 2018-04-11
JP2018518050A (ja) 2018-07-05
US20200312671A1 (en) 2020-10-01
WO2016196216A8 (en) 2017-12-14
US20180151384A1 (en) 2018-05-31
EP3576136A1 (en) 2019-12-04
JP6613470B2 (ja) 2019-12-04
US10699908B2 (en) 2020-06-30
JP2020025110A (ja) 2020-02-13
TWI742938B (zh) 2021-10-11
CN107851579A (zh) 2018-03-27
EP3304580B1 (en) 2019-07-10
CN114102269A (zh) 2022-03-01

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