TWI712136B - 覆晶接合結構及其線路基板 - Google Patents
覆晶接合結構及其線路基板 Download PDFInfo
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- TWI712136B TWI712136B TW109106351A TW109106351A TWI712136B TW I712136 B TWI712136 B TW I712136B TW 109106351 A TW109106351 A TW 109106351A TW 109106351 A TW109106351 A TW 109106351A TW I712136 B TWI712136 B TW I712136B
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Abstract
本發明揭露一種覆晶接合結構,其具有一線路基板,該線路基板具有一載板、複數個內引腳、一T型線路及一虛設金屬圖案,該些內引腳、該T型線路及該虛設金屬圖案位於該載板之一內接合區,該T型線路具有一主線段、一連接段及一支線段,該連接段連接該主線段及該支線段,該主線段沿著一橫軸方向延伸,該支線段沿著一縱軸方向延伸,該虛設金屬圖案位於該連接段及該些內引腳之間。
Description
本發明關於一種覆晶接合結構,其晶片接合於具有T型線路及虛設金屬圖案之線路基板。
線路蝕刻製程係藉由蝕刻液蝕刻圖案化光阻顯露的金屬層,將圖案轉移至金屬層以形成精細線路圖案,蝕刻液係於圖案化光阻之間流動,以均勻蝕刻顯露的金屬層,然而當蝕刻液流動至被三面光阻圍繞的空間時,蝕刻液流動性會降低而蓄積於被光阻三面圍繞的空間中,蝕刻液停留時間過長,可能導致過度蝕刻,使得精細線路斷線而失效。
本發明之目的在於提供一覆晶接合結構及其線路基板,於T型線路周圍設置虛設金屬圖案,以避免T型線路因蝕刻液過度蝕刻而斷線。
本發明揭露一種線路基板,其包含一載板、複數個內引腳、至少一T型線路及至少一虛設金屬圖案,該載板具有一表面,該表面定義有一內接合區,該內接合區具有一第一區及一第二區,該第一區位於該第二區外側,該些內引腳位於該第一區,該T型線路位於該第二區且具有一主線段、一連接段及一支線段,該主線段連接該連接段並沿著一橫軸方向延伸,該支線段連接該連接段並沿著一縱軸方向朝該第一區延伸,該支線段用以接合一凸塊,該虛設金屬圖案位於該連接段及該些內引腳之間,該虛設金屬圖案未電性連接該些內引腳及該T型線路。
本發明另揭露一種覆晶接合結構,其包含一線路基板、一晶片及一焊料層,該線路基板具有一載板、複數個內引腳、至少一T型線路及至少一虛設金屬圖案,該載板之一表面定義有一內接合區,該內接合區具有一第一區及一第二區,該第一區位於該第二區外側,該些內引腳位於該第一區,該T型線路位於該第二區且具有一主線段、一連接段及一支線段,該主線段連接該連接段並沿著一橫軸方向延伸,該支線段連接該連接段並沿著一縱軸方向朝該第一區延伸,該虛設金屬圖案位於該連接段及該些內引腳之間,且未電性連接該些內引腳及該T型線路,該晶片設置於該內接合區且具有複數個第一凸塊及至少一第二凸塊,該焊料層位於該線路基板及該晶片之間,用以接合該些第一凸塊及該些內引腳之該內引腳,並用以接合該第二凸塊及該支線段。
本發明於該連接段及該些內引腳之間設置該虛設金屬圖案,使該虛設金屬圖案位於該連接段、該支線段及該些內引腳所圍繞的空間中,因此蝕刻液不會蓄積於該連接段及該支線段周圍,可避免蝕刻液過度蝕刻該T型線路而導致該連接段及/或該支線段斷線。
請參閱第1至3圖,本發明揭露一種線路基板100,該線路基板100具有一載板110及一線路層120,該線路層120位於該載板110之一表面111,該表面111定義有一外接合區112及一內接合區113,該線路層120具有複數個外引腳121及複數個內引腳122,該些外引腳121位於該外接合區112,該些內引腳122位於該內接合區113,該些外引腳121及該些內引腳122沿著一橫軸方向X分別排列於該外接合區112及該內接合區113,該內接合區113具有一第一區113a及一第二區113b,該第一區113a位於該第二區113b外側,在本實施例中,該內接合區113具有兩個第一區113a,該第二區113b位於該些第一區113a之間,該些內引腳122位於該些第一區113a。
較佳地,該載板110可由聚醯亞胺(polyimide, PI)、聚對苯二甲酸乙二酯(polyethylene terephthalate, PET)、玻璃、陶瓷、金屬或其他材料所製成,該線路層120之材質可為銅、鎳、金或其他金屬或合金。
請參閱第2圖,較佳地,該線路基板100另具有一防焊層130,該防焊層130覆蓋該線路層120,但未覆蓋該些外引腳121及該些內引腳122,該防焊層130用以保護該線路層120,而顯露之該些外引腳121及該些內引腳122分別用以接合一電子裝置及一晶片(圖未繪出)。
請參閱第3及4圖,該線路基板100另具有至少一T型線路140,位於該內接合區113之該第二區113b,該T型線路140用以接地或接電源,與該些內引腳122無電性連接,該T型線路140具有一主線段141、一連接段142及一支線段143,該主線段141連接該連接段142並沿著該橫軸方向X延伸,該支線段143連接該連接段142並沿著一縱軸方向Y朝該第一區113a延伸,該支線段143係用以接合一凸塊,在本實施例中,相互連接之該主線段141及該連接段142呈直線狀,而相互連接之該連接段142及該支線段143彼此垂直,但本發明不以此為限制,該主線段141及該連接段142可呈非直線狀,該連接段142及該支線段143之間的夾角可大於、小於或實質上等於90度。
較佳地,該線路基板100具有複數個T型線路140,該些T型線路140之該主線段141沿著該橫軸方向X延伸並彼此連接,該些T型線路140之該支線段143沿著該縱軸方向Y朝向該內接合區113之該第一區113a延伸,以分別接合一凸塊。
請參閱第3及4圖,該線路基板100另具有至少一虛設金屬圖案(dummy pattern)150,該虛設金屬圖案150位於該連接段142及該些內引腳122之間,且未電性連接該T型線路140及該些內引腳122,本發明不限制該虛設金屬圖案150的形狀,可配合周圍線路配置進行調整,該虛設金屬圖案150係用以保護該T型線路140,特別是避免該連接段142及該支線段143因過度蝕刻而斷線,較佳地,該線路基板100具有兩個虛設金屬圖案150,分別位於該支線段143兩側,該些虛設金屬圖案150可為相同圖案,對稱地位於該支線段143兩側,或是不同圖案,不對稱地位於該支線段143兩側。
在本實施例中,該線路層120、該T型線路140及該虛設金屬圖案150係經由同一金屬蝕刻製程形成於該載板110,該虛設金屬圖案150位於該連接段142、該支線段143及該些內引腳122所圍繞的空間內,可避免蝕刻液蓄積在該連接段142及該支線段143周圍,因此可防止該連接段142及該支線段143因過度蝕刻而斷線的情形發生。
第4至8圖分別為不同態樣之該T型線路140,不同於第4圖,第5圖所示之該支線段143沿著該縱軸方向Y朝其中之一該內引腳122延伸,第6圖所示之該支線段143則沿著該縱軸方向Y延伸至相鄰兩個該內引腳122之間,較佳地,該支線段143及該內引腳122之線寬實質上相同,第7圖所示之該支線段143具有一第一端143a及一第二端143b,該第一端143a連接該連接段142,該第二端143b用以接合一凸塊,其中該第一端143a之線寬大於該第二端143b之線寬,以避免該連接段142及該支線段143之間發生斷裂,在本實施例中,該第二端143b位於相鄰兩個該內引腳122之間,不同於第4至7圖,第8圖所示之該支線段143呈非直線狀,該第一端143b及該第二端143b彼此垂直。
請參閱第2及9圖(第9圖為第7圖之剖視圖),本發明另揭露一種覆晶接合結構I,其包含該線路基板100、一晶片200及一焊料層300,該晶片200設置於該載板110之該內接合區113,且具有複數個第一凸塊210及至少一第二凸塊220,該焊料層300位於該線路基板100及該晶片200之間,用以接合該些第一凸塊210及該些內引腳122,並用以接合該第二凸塊220及該支線段143,較佳地,該焊料層300之厚度不大於0.30μm,更佳地,該焊料層300之厚度不大於0.20μm,在本實施例中,該焊料層300形成於該些內引腳122及該T型線路140上,厚度為0.16±0.4 μm,將該晶片200設置於該內接合區113後進行熱壓合製程,該焊料層300受熱軟化後用以接合該晶片200及該線路基板100。
由於該焊料層300受熱軟化後會具有流動性,當該第二凸塊220接合於該支線段143時,位於該T型線路140上的該焊料層300會從不同方向流向該支線段143,而增加該焊料層300溢流的發生率,因此可選擇性地變更該T型線路140之設計,以避免焊料溢流而導致橋接短路。
請參閱4圖,該主線段141沿著該縱軸方向Y具有一第一寬度W1,該連接段142沿著該縱軸方向Y具有一第二寬度W2,較佳地,該第二寬度W2小於該第一寬度W1,縮小該連接段142寬度可有效降低自該連接段142流向該支線段143的焊料量,以避免過多的焊料流向該第二凸塊220而發生溢流,此外,該支線段143沿著該橫軸方向X具有一第三寬度W3,該第二寬度W2與該第三寬度W3之比值大於或等於0.5(
),當比值介於0.5及1之間(
),表示該第二寬度W2小於該第三寬度W3,當比值等於1(
),表示該第二寬度W2等於該第三寬度W3,當比值大於1(
),表示該第二寬度W2大於該第三寬度W3。
除了限制該主線段141、該連接段142及該支線段143之間的線寬比例,亦可根據該第二凸塊220的尺寸調整該連接段142的線寬,請參閱第5圖,較佳地,該第二凸塊220沿著該橫軸方向X具有一第四寬度W4,該第二寬度W2與該第四寬度W4之比值小於2(
),當比值介於1及2之間(
),表示該第二寬度W2大於該第四寬度W4,但小於兩倍的該第四寬度W4,當比值等於1(
),表示該第二寬度W2等於該第四寬度W4,當比值小於1(
),表示該第二寬度W2小於該第四寬度W4。
請參閱第6圖,該連接段142沿著該橫軸方向X具有一第一長度L1,該第二凸塊220沿著該縱軸方向Y具有一第二長度L2,較佳地,該連接段142長度不小於4倍的該第二凸塊220長度,因此該第一長度L1與該第二長度L2之比值大於或等於4(
),可根據該第二凸塊220之長度決定需要縮小寬度的該連接段142長度,在本實施例中,該支線段143位於該連接段142中央,該支線段143至該連接段142兩端的最短距離實質上相同,但本發明不以此為限制,該支線段143根據不同佈線設計需求選擇性地偏向該連接段142的其中一側。
請參閱第6圖,該連接段142至該第二凸塊220之間具有一直線距離LD,該直線距離LD為該連接段142與該第二凸塊220之間的最短距離,該直線距離LD與該第二寬度W2之比值(
)與該焊料層300之厚度成正比,當第二寬度W2固定不變,但該焊料層300之厚度增加時,需要拉長該直線距離LD,以避免過多的焊料流動至該支線段143而造成橋接短路,較佳地,當該焊料層300厚度實質上等於0.16μm時,該直線距離LD須大於或等於3倍的該第二寬度W2,因此該直線距離LD與該第二寬度W2之比值大於或等於3(
),當該焊料層300厚度實質上等於0.18μm時,該直線距離LD須大於或等於4倍的該第二寬度W2,因此該直線距離LD與該第二寬度W2之比值大於或等於4(
)。
第4至7圖所示之實施例中,該第二凸塊220沿著該橫軸方向X具有該第四寬度W4,沿著該縱軸方向Y具有該第二長度L2,且位於該支線段143兩側的該些虛設金屬圖案150為相同圖案,彼此鏡射對稱,不同於第4至7圖,在第8圖所示之實施例中,該第二凸塊220沿著該縱軸方向Y具有該第四寬度W4,沿著該橫軸方向X具有該第二長度L2,且位於該支線段143兩側的該些虛設金屬圖案150為不同圖案,彼此不對稱。
本發明之保護範圍當視後附之申請專利範圍所界定者為準,任何熟知此項技藝者,在不脫離本發明之精神和範圍內所作之任何變化與修改,均屬於本發明之保護範圍。
100:線路基板
110:載板
111:表面
112:外接合區
113:內接合區
113a:第一區
113b:第二區
120:線路層
121:外引腳
122:內引腳
130:防焊層
140:T型線路
141:主線段
142:連接段
143:支線段
143a:第一端
143b:第二端
150:虛設金屬圖案
200:晶片
210:第一凸塊
220:第二凸塊
300:焊料層
400:封裝膠體
I:覆晶接合結構
L1:第一長度
L2:第二長度
LD:直線長度
W1:第一寬度
W2:第二寬度
W3:第三寬度
W4:第四寬度
X:橫軸方向
Y:縱軸方向
第1圖:依據本發明之一實施例,一載板之上視圖。
第2圖:依據本發明之一實施例,一覆晶接合結構之上視圖。
第3圖:依據本發明之一實施例,一線路基板之內接合區之局部上視圖。
第4圖:第3圖之局部放大圖。
第5圖:第3圖之局部放大圖。
第6圖:第3圖之局部放大圖。
第7圖:依據本發明之一實施例,一線路基板之內接合區之局部上視圖。
第8圖:依據本發明之一實施例,一線路基板之內接合區之局部上視圖。
第9圖:依據本發明之一實施例,一覆晶接合結構之剖視圖。
111:表面
113a:第一區
113b:第二區
122:內引腳
140:T型線路
141:主線段
142:連接段
143:支線段
150:虛設金屬圖案
210:第一凸塊
220:第二凸塊
W1:第一寬度
W2:第二寬度
W3:第三寬度
X:橫軸方向
Y:縱軸方向
Claims (19)
- 一種線路基板,其包含: 一載板,具有一表面,該表面定義有一內接合區,該內接合區具有一第一區及一第二區,該第一區位於該第二區外側; 複數個內引腳,位於該第一區; 至少一T型線路,位於該第二區,該T型線路具有一主線段、一連接段及一支線段,該主線段連接該連接段並沿著一橫軸方向延伸,該支線段連接該連接段並沿著一縱軸方向朝該第一區延伸,該支線段用以接合一凸塊;以及 至少一虛設金屬圖案,位於該連接段及該些內引腳之間,該虛設金屬圖案未電性連接該些內引腳及該T型線路。
- 如請求項1之線路基板,其中該主線段沿著該縱軸方向具有一第一寬度,該連接段沿著該縱軸方向具有一第二寬度,該第二寬度小於該第一寬度。
- 如請求項2之線路基板,其中該支線段沿著該橫軸方向具有一第三寬度,該第二寬度與該第三寬度之比值不小於0.5。
- 如請求項1之線路基板,其中該支線段沿著該縱軸方向朝其中之一該內引腳延伸。
- 如請求項1之線路基板,其中該支線段沿著該縱軸方向延伸至相鄰兩個該內引腳之間。
- 如請求項1之線路基板,其中該支線段具有一第一端及一第二端,該第一端連接該連接段,該第二端用以接合該凸塊,該第一端之線寬大於該第二端之線寬。
- 如請求項1之線路基板,其中該支線段具有一第一端及一第二端,該第一端連接該連接段,該第二端用以接合該凸塊,該第一端及該第二端彼此垂直。
- 如請求項1之線路基板,其具有二虛設金屬圖案,該些虛設金屬圖案分別位於該支線段兩側。
- 一種覆晶接合結構,其包含: 一線路基板,具有一載板、複數個內引腳、至少一T型線路及至少一虛設金屬圖案,該載板之一表面定義有一內接合區,該內接合區具有一第一區及一第二區,該第一區位於該第二區外側,該些內引腳位於該第一區,該T型線路位於該第二區且具有一主線段、一連接段及一支線段,該主線段連接該連接段並沿著一橫軸方向延伸,該支線段連接該連接段並沿著一縱軸方向朝該第一區延伸,該虛設金屬圖案位於該連接段及該些內引腳之間,該虛設金屬圖案未電性連接該些內引腳及該T型線路; 一晶片,設置於該內接合區,該晶片具有複數個第一凸塊及至少一第二凸塊;以及 一焊料層,位於該線路基板及該晶片之間,該焊料層用以接合該些第一凸塊及該些內引腳,且該焊料層用以接合該第二凸塊及該支線段。
- 如請求項9之覆晶接合結構,其中該主線段沿著該縱軸方向具有一第一寬度,該連接段沿著該縱軸方向具有一第二寬度,該第二寬度小於該第一寬度。
- 如請求項10之覆晶接合結構,其中該支線段沿著該橫軸方向具有一第三寬度,該第二寬度與該第三寬度之比值不小於0.5。
- 如請求項9之覆晶接合結構,其中該支線段沿著該縱軸方向朝其中之一該內引腳延伸。
- 如請求項9之覆晶接合結構,其中該支線段沿著該縱軸方向延伸至相鄰兩個該內引腳之間。
- 如請求項9之覆晶接合結構,其中該支線段具有一第一端及一第二端,該第一端連接該連接段,該第二端用以接合該第二凸塊,該第一端之線寬大於該第二端之線寬。
- 如請求項9之覆晶接合結構,其中該支線段具有一第一端及一第二端,該第一端連接該連接段,該第二端用以接合該第二凸塊,該第一端及該第二端彼此垂直。
- 如請求項9之覆晶接合結構,其中該線路基板具有二虛設金屬圖案,該些虛設金屬圖案分別位於該支線段兩側。
- 如請求項10之覆晶接合結構,其中該第二凸塊具有一第四寬度,該第二寬度與該第四寬度之比值小於2。
- 如請求項10之覆晶接合結構,其中該連接段沿著該橫軸方向具有一第一長度,該第二凸塊具有一第二長度,該第一長度與該第二長度之比值不小於4。
- 如請求項10之覆晶接合結構,其中該連接段至該第二凸塊之間具有一直線距離,該直線距離與該第二寬度之比值不小於3。
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TW109106351A TWI712136B (zh) | 2020-02-26 | 2020-02-26 | 覆晶接合結構及其線路基板 |
US17/038,237 US11322437B2 (en) | 2020-02-26 | 2020-09-30 | Flip chip interconnection and circuit board thereof |
JP2020170601A JP7030166B2 (ja) | 2020-02-26 | 2020-10-08 | フリップチップボンディング構造体及びその回路基板 |
KR1020200130021A KR102375544B1 (ko) | 2020-02-26 | 2020-10-08 | 플립칩 접합 구조 및 그 회로 기판 |
CN202011077836.3A CN113133183A (zh) | 2019-12-31 | 2020-10-10 | 覆晶接合结构及其线路基板 |
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TWI804319B (zh) * | 2022-05-19 | 2023-06-01 | 頎邦科技股份有限公司 | 覆晶接合構造及其基板 |
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KR102375544B1 (ko) | 2022-03-16 |
JP2021136432A (ja) | 2021-09-13 |
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