TWI711347B - 覆晶接合結構及其線路基板 - Google Patents

覆晶接合結構及其線路基板 Download PDF

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TWI711347B
TWI711347B TW108148760A TW108148760A TWI711347B TW I711347 B TWI711347 B TW I711347B TW 108148760 A TW108148760 A TW 108148760A TW 108148760 A TW108148760 A TW 108148760A TW I711347 B TWI711347 B TW I711347B
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馬宇珍
黃信豪
周文復
許國賢
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頎邦科技股份有限公司
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Priority to KR1020200073577A priority patent/KR102408726B1/ko
Priority to CN202010554734.XA priority patent/CN113130410A/zh
Priority to JP2020104396A priority patent/JP6989653B2/ja
Priority to US16/910,461 priority patent/US11581283B2/en
Priority to CN202011077836.3A priority patent/CN113133183A/zh
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Abstract

一種覆晶接合結構具有一線路基板、一晶片及一焊料層，該晶片設置於該線路基板之一內接合區，該焊料層位於該線路基板及該晶片之間，用以將凸塊接合於該內接合區內的複數個內引腳及一T型線路，該T型線路具有一主線段、一連接段及一支線段，該連接段連接該主線段及該支線段，該主線段沿著一橫向方向延伸，該支線段沿著一縱向方向朝向該內接合區延伸，該連接段之寬度小於該主線段之寬度，以避免該焊料層溢流至該支線段而造成橋接短路。

Description

覆晶接合結構及其線路基板
本發明關於一種覆晶接合結構，特別是一種具有T型線路之覆晶接合結構。
覆晶封裝技術大多使用熱壓合方式，使焊料受熱軟化以接合晶片及基板，於熱壓合過程中，軟化的焊料會沿著線路朝向凸塊流動，然而當凸塊鄰近線寬較寬的線路時，線路上的焊料會以較快的速度受熱軟化而流向凸塊，導致凸塊周圍發生焊料過量而溢流的情形，甚至發生橋接短路而降低良率。
本發明之目的在於提供一種具有T型線路之覆晶接合結構，藉由縮小T型線路連接段之寬度，有效避免因焊料溢流而橋接短路的情形發生。
本發明揭露一種覆晶接合結構，其包含一線路基板、一晶片及一焊料層，該線路基板具有一載板、複數個內引腳及至少一T型線路，該載板之一表面定義有一內接合區，該內接合區包含一第一內接合區及一第二內接合區，該些內引腳位於該第一內接合區，該T型線路位於該第二內接合區，該T型線路具有一主線段、一連接段及一支線段，該主線段連接該連接段並沿著一橫向方向延伸，該支線段連接該連接段並沿著一縱向方向朝向該第一內接合區延伸，該主線段沿著該縱向方向具有一第一寬度，該連接段沿著該縱向方向具有一第二寬度，該第二寬度小於該第一寬度，該晶片設置於該內接合區且具有複數個第一凸塊及至少一第二凸塊，該焊料層位於該線路基板及該晶片之間，該些第一凸塊藉由該焊料層接合於該些內引腳，該第二凸塊藉由該焊料層接合於該支線段。
本發明另揭露一種線路基板，其包含一載板、複數個內引腳及至少一T型線路，該載板具有一表面，該表面定義有一內接合區，該內接合區包含一第一內接合區及一第二內接合區，該些內引腳位於該第一內接合區，該T型線路位於該第二內接合區，該T型線路具有一主線段、一連接段及一支線段，該主線段連接該連接段並沿著一橫向方向延伸，該支線段連接該連接段並沿著一縱向方向朝向該第一內接合區延伸，該支線段用以接合一凸塊，該主線段沿著該縱向方向具有一第一寬度，該連接段沿著該縱向方向具有一第二寬度，該第二寬度小於該第一寬度。
當接合該線路基板及該晶片時，該焊料層會受熱軟化而從不同方向流向該支線段上的凸塊接合處，因此本發明縮小該連接段寬度，減少自該連接段流向該支線段的焊料量，以避免焊料自凸塊接合處向外溢流而導致橋接短路。
請參閱第1至3圖，本發明揭露一種覆晶接合結構I，其可為薄膜覆晶封裝結構(Chip on Film, COF)、玻璃覆晶封裝結構(Chip on Glass, COG)或其他覆晶封裝結構，該覆晶接合結構I包含一線路基板100及一晶片200，該線路基板100具有一載板110、複數個外引腳120及複數個內引腳130，該載板110可由聚醯亞胺(polyimide, PI)、聚對苯二甲酸乙二酯(polyethylene terephthalate, PET)、玻璃、陶瓷、金屬或其他材料所製成，該載板110具有一表面111，該些外引腳120及該些內引腳130形成於該表面111，該表面111定義有二外接合區112及一內接合區113，該些外接合區112分別位於該載板110之兩側，該內接合區113位於該些外接合區112之間，該些外引腳120位於該些外接合區112內，該些內引腳130位於該內接合區113內。
請參閱第2及3圖，較佳地，該覆晶接合結構I另具有一防焊層300，該防焊層300覆蓋該載板110之該表面111，並顯露該些外接合區112及該內接合區113，該晶片200設置於該內接合區113，在本實施例中，該晶片200係藉由熱壓合技術接合於該些內引腳130上，該些外引腳120用以接合外部裝置(圖未繪出)。
請參閱第3及4圖，該內接合區113包含一第一內接合區113a及一第二內接合區113b，該些內引腳130位於該第一內接合區113a，該線路基板100另具有至少一T型線路140，該T型線路140位於該第二內接合區113b，該T型線路140與該些內引腳130之間無電性連接，係用以接地或接電源，較佳地，該內接合區113包含二個第一內接合區113a，該些第一內接合區113a位於兩側，該第二內接合區113b位於該些第一內接合區113a之間，該些內引腳130沿著該內接合區113兩側邊緣排列，該T型線路140位於兩側的該些內引腳130之間，在本實施例中，該些內引腳130及該T型線路140係經由圖案化銅箔基材所形成。
請參閱第3及4圖，其為本發明之一實施例，該T型線路140具有一主線段141、一連接段142及一支線段143，該主線段141連接該連接段142並沿著一橫向方向D1延伸，該支線段143連接該連接段142並沿著一縱向方向D2朝該第一內接合區113a延伸，該支線段143用以接合該晶片200之一凸塊，在本實施例中，該連接段142與該支線段143實質上垂直，但本發明不以此為限制，該連接段142及該支線段143之間的夾角可大於、小於或實質上等於90度。
較佳地，該線路基板100具有複數個T型線路140，各該T型線路140之該主線段141沿著該橫向方向D1相互連接，各該T型線路140之該支線段143沿著該縱向方向D2分別朝向該第一內接合區113a延伸。
第5、6及7圖為不同實施例之該支線段143，第5圖所示之該支線段143係沿著該縱向方向D2朝向其中之一該內引腳130延伸，但未連接該內引腳130，第6圖所示之該支線段143係沿著該縱向方向D2延伸至相鄰兩個該內引腳130之間，第7圖所示之該支線段143具有一第一端143a及一第二端143b，該第一端143a連接該連接段142，該第二端143b用以接合該晶片200之一凸塊，其中該第一端143a之線寬大於該第二端143b之線寬，以避免該連接段142與該支線段143之間發生斷裂，較佳地，該第二端143b位於相鄰兩個該內引腳130之間。
請參閱第3至8圖，該晶片200具有複數個第一凸塊210及至少一第二凸塊220，該覆晶接合結構I另具有一焊料層400，該焊料層400位於該線路基板100及該晶片200之間，該些第一凸塊210藉由該焊料層400接合於該些內引腳130，該第二凸塊220藉由該焊料層400接合於該支線段143，較佳地，該焊料層400之厚度小於或實質上等於0.30 μm，更佳地，該焊料層400之厚度小於或實質上等於0.20 μm，在本實施例中，該線路基板100包含該焊料層400，該焊料層400形成於該些內引腳130及該T型線路140之該主線段141、該連接段142及該支線段143，其厚度為0.16 μm±0.4 μm，當接合該晶片200及該線路基板100時，該些內引腳130藉由該焊料層400與該些第一凸塊210接合，該支線段143藉由該焊料層400與該第二凸塊220接合。
請參閱第7圖，在本實施例中，該支線段143之該第二端143b係用以接合該第二凸塊220，因此當該晶片200接合於該線路基板100時，該第二端143b藉由該焊料層400接合該第二凸塊220。
請參閱第8圖，較佳地，該覆晶接合結構I另具有一封裝膠體500，該封裝膠體500填充於該線路基板100及該晶片200之間，該封裝膠體500可為底部填充膠(underfill)，但本發明不以此為限制。
該焊料層400於熱壓合過程中會受熱軟化而具有流動性，當該第二凸塊220接合於該支線段143時，位於該T型線路140上的該焊料層400會從不同方向流向該第二凸塊220的接合處而提高溢流的可能性，為了避免發生橋接短路，本發明針對該T型線路140進行佈線設計。
請參閱第4圖，該主線段141沿著該縱向方向D2具有一第一寬度W1，該連接段142沿著該縱向方向D2具有一第二寬度W2，該第二寬度W2小於該第一寬度W1，藉由縮小該連接段142寬度，以有效降低從該連接段142流向該支線段143的焊料量，因此可避免過多的焊料流向該第二凸塊220而發生溢流，較佳地，該支線段143沿著該橫向方向D1具有一第三寬度W3，該第二寬度W2與該第三寬度W3之比值大於或實質上等於0.5(W2/W3≥0.5)，其中當比值介於0.5及1時[0.5>(W2/W3)>1]，表示該第二寬度W2小於該第三寬度W3，當比值實質上等於1時(W2/W3=1)，表示該第二寬度W2實質上等於該第三寬度W3，當比值大於1時(W2/W3>1)，表示該第二寬度W2大於該第三寬度W3，在本實施例中，該支線段143之線寬與該些內引腳130之線寬實質上相同。
請參閱第5圖，該第二凸塊220沿著該橫向方向D1具有一第四寬度W4，該第二寬度W2與該第四寬度W4之比值小於2(W2/W4>2)，其中比值可介於1及2之間[1>(W2/W4)>2]，即該第二寬度W2大於該第四寬度W4，但小於兩倍的該第四寬度W4，比值可實質上等於1(W2/W4=1)，使該第二寬度W2及該第四寬度W4實質上相同，比值亦可介於0及1之間[0>(W2/W4)>1]，使該第二寬度W2小於該第四寬度W4，佈線設計時可根據該第二凸塊220之寬度決定該連接段142之寬度，使該第二寬度W2與該第四寬度W4之比值小於2。
請參閱第6圖，該連接段142沿著該橫向方向D1具有一第一長度L1，該第二凸塊220沿著該縱向方向D2具有一第二長度L2，該第一長度L1與該第二長度L2之比值大於或實質上等於4(L1/L2≥4)，使該連接段142長度不小於4倍的該第二凸塊220長度，因此可根據該第二凸塊220之長度決定需要內縮的該連接段142長度，在本實施例中，該支線段143位於該連接段142中央，即該支線段143至該連接段142兩端的最短距離實質上相同，但本發明不以此為限制，該支線段143根據不同佈線設計需求選擇性地偏向該連接段142的其中一端。
請參閱第6圖，該連接段142邊緣至該第二凸塊220邊緣之間具有一直線距離LD，該直線距離LD為該連接段142與該第二凸塊220之間的最短距離，當該焊料層400之厚度增加時，需要提高該直線距離LD與該第二寬度W2之比值，也就是該直線距離LD與該第二寬度W2之比值必須與該焊料層400之厚度成正比，以避免過多的焊料於熱壓合過程中流動至該支線段143與該第二凸塊220的接合處，而造成橋接短路，較佳地，當該焊料層400之厚度實質上等於0.16 μm時，該直線距離LD與該第二寬度W2之比值須大於或實質上等於3(LD/W2≥3)，使該直線距離LD大於或等於3倍的該第二寬度W2，當該焊料層400之厚度實質上等於0.18 μm時，該直線距離LD與該第二寬度W2之比值須大於或實質上等於4(LD/W2≥4)，使該直線距離LD大於或等於4倍的該第二寬度W2。
為了避免過多的該焊料層400自該T型線路140流向該第二凸塊220，本發明縮小該連接段142之寬度，藉此減少自該連接段142流向該支線段143的焊料量，並可根據不同需求，選擇性地調整該連接段142之寬度、長度及其與該第二凸塊220之間的距離，以大幅降低因焊料溢流而橋接短路的發生率，有效提昇產品良率。
本發明之保護範圍當視後附之申請專利範圍所界定者為準，任何熟知此項技藝者，在不脫離本發明之精神和範圍內所作之任何變化與修改，均屬於本發明之保護範圍。
100:線路基板 110:載板 111:表面 112:外接合區 113:內接合區 113a:第一內接合區 113b:第二內接合區 120:外引腳 130:內引腳 140:T型線路 141:主線段 142:連接段 143:支線段 143a:第一端 143b:第二端 200:晶片 210:第一凸塊 220:第二凸塊 300:防焊層 400:焊料層 500:封裝膠體 D1:橫向方向 D2:縱向方向 I:覆晶接合結構 L1:第一長度 L2:第二長度 LD:直線距離 W1:第一寬度 W2:第二寬度 W3:第三寬度 W4:第四寬度
第1圖：依據本發明之一較佳實施例，一載板之上視圖。 第2圖：依據本發明之一較佳實施例，一覆晶接合結構之上視圖。 第3圖：依據本發明之一較佳實施例，一線路基板之內接合區之局部上視圖。 第4圖：依據本發明之一較佳實施例，一線路基板之內接合區之局部上視圖。 第5圖：依據本發明之一較佳實施例，一線路基板之內接合區之局部上視圖。 第6圖：依據本發明之一較佳實施例，一線路基板之內接合區之局部上視圖。 第7圖：依據本發明之一較佳實施例，一線路基板之內接合區之局部上視圖。 第8圖：沿第7圖A-A剖線之剖視圖。
111:表面
113:內接合區
130:內引腳
140:T型線路
141:主線段
142:連接段
143:支線段
210:第一凸塊
220:第二凸塊
D1:橫向方向
D2:縱向方向
W1:第一寬度
W2:第二寬度
W3:第三寬度

Claims (17)

  1. 一種覆晶接合結構，其包含： 一線路基板，具有一載板、複數個內引腳及至少一T型線路，該載板之一表面定義有一內接合區，該內接合區包含一第一內接合區及一第二內接合區，該些內引腳位於該第一內接合區，該T型線路位於該第二內接合區，該T型線路具有一主線段、一連接段及一支線段，該主線段連接該連接段並沿著一橫向方向延伸，該支線段連接該連接段並沿著一縱向方向朝該第一內接合區延伸，該主線段沿著該縱向方向具有一第一寬度，該連接段沿著該縱向方向具有一第二寬度，該第二寬度小於該第一寬度； 一晶片，設置於該內接合區，該晶片具有複數個第一凸塊及至少一第二凸塊；以及 一焊料層，位於該線路基板及該晶片之間，該些第一凸塊藉由該焊料層接合於該些內引腳，該第二凸塊藉由該焊料層接合於該支線段。
  2. 如申請專利範圍第1項所述之覆晶接合結構，其中該支線段沿著該縱向方向朝向其中之一該內引腳延伸。
  3. 如申請專利範圍第1項所述之覆晶接合結構，其中該支線段沿著該縱向方向延伸至相鄰兩個該內引腳之間。
  4. 如申請專利範圍第1項所述之覆晶接合結構，其中該支線段具有一第一端及一第二端，該第一端連接該連接段，該第二端接合該第二凸塊，該第一端之線寬大於該第二端之線寬。
  5. 如申請專利範圍第1項所述之覆晶接合結構，其中該支線段沿著該橫向方向具有一第三寬度，該第二寬度與該第三寬度之比值大於或實質上等於0.5。
  6. 如申請專利範圍第1項所述之覆晶接合結構，其中該第二凸塊沿著該橫向方向具有一第四寬度，該第二寬度與該第四寬度之比值小於2。
  7. 如申請專利範圍第6項所述之覆晶接合結構，其中該第二寬度及該第四寬度實質上相同。
  8. 如申請專利範圍第6項所述之覆晶接合結構，其中該連接段沿著該橫向方向具有一第一長度，該第二凸塊沿著該縱向方向具有一第二長度，該第一長度與該第二長度之比值大於或實質上等於4。
  9. 如申請專利範圍第1項所述之覆晶接合結構，其中該連接段至該第二凸塊之間具有一直線距離，該直線距離與該第二寬度之比值大於或實質上等於3。
  10. 如申請專利範圍第1項所述之覆晶接合結構，其中該焊料層之厚度小於或實質上等於0.30 μm。
  11. 一種線路基板，其包含： 一載板，具有一表面，該表面定義有一內接合區，該內接合區包含一第一內接合區及一第二內接合區； 複數個內引腳，位於該第一內接合區；以及 至少一T型線路，位於該第二內接合區，該T型線路具有一主線段、一連接段及一支線段，該主線段連接該連接段並沿著一橫向方向延伸，該支線段連接該連接段並沿著一縱向方向朝該第一內接合區延伸，該支線段用以接合一凸塊，該主線段沿著該縱向方向具有一第一寬度，該連接段沿著該縱向方向具有一第二寬度，該第二寬度小於該第一寬度。
  12. 如申請專利範圍第11項所述之線路基板，其中該支線段沿著該縱向方向朝向其中之一該內引腳延伸。
  13. 如申請專利範圍第11項所述之線路基板，其中該支線段沿著該縱向方向延伸至相鄰兩個該內引腳之間。
  14. 如申請專利範圍第11項所述之線路基板，其中該支線段具有一第一端及一第二端，該第一端連接該連接段，該第二端用以接合該凸塊，該第一端之線寬大於該第二端之線寬。
  15. 如申請專利範圍第11項所述之線路基板，其中該支線段沿著該橫向方向具有一第三寬度，該第二寬度與該第三寬度之比值大於或實質上等於0.5。
  16. 如申請專利範圍第11項所述之線路基板，其另包含一焊料層，該焊料層形成於該支線段，該支線段藉由該焊料層與該凸塊接合。
  17. 如申請專利範圍第16項所述之線路基板，其中該焊料層之厚度小於或實質上等於0.30 μm。
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JP6989653B2 (ja) 2022-01-05
JP2021111771A (ja) 2021-08-02
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US20210202422A1 (en) 2021-07-01
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TW202127966A (zh) 2021-07-16
KR20210086935A (ko) 2021-07-09

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