CN113130410A - 覆晶接合结构及其线路基板 - Google Patents

覆晶接合结构及其线路基板 Download PDF

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CN113130410A
CN113130410A CN202010554734.XA CN202010554734A CN113130410A CN 113130410 A CN113130410 A CN 113130410A CN 202010554734 A CN202010554734 A CN 202010554734A CN 113130410 A CN113130410 A CN 113130410A
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马宇珍
黄信豪
周文复
许国贤
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Chipbond Technology Corp
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Abstract

本发明是一种覆晶接合结构及其线路基板。该覆晶接合结构具有线路基板、芯片及焊料层，该芯片设置于该线路基板的内接合区，该焊料层位于该线路基板及该芯片之间，用以将凸块接合于该内接合区内的多个内引脚及T型线路，该T型线路具有主线段、连接段及支线段，该连接段连接该主线段及该支线段，该主线段沿着横向方向延伸，该支线段沿着纵向方向朝向该内接合区延伸，该连接段的宽度小于该主线段的宽度，以避免该焊料层溢流至该支线段而造成桥接短路。

Description

覆晶接合结构及其线路基板
技术领域
本发明关于一种覆晶接合结构，特别是一种具有T型线路的覆晶接合结构。
背景技术
覆晶封装技术大多使用热压合方式，使焊料受热软化以接合芯片及基板，于热压合过程中，软化的焊料会沿着线路朝向凸块流动，然而当凸块邻近线宽较宽的线路时，线路上的焊料会以较快的速度受热软化而流向凸块，导致凸块周围发生焊料过量而溢流的情形，甚至发生桥接短路而降低良率。
发明内容
本发明的目的在于提供一种具有T型线路的覆晶接合结构，借由缩小T型线路连接段的宽度，有效避免因焊料溢流而桥接短路的情形发生。
本发明揭露一种覆晶接合结构，其包含线路基板、芯片及焊料层，该线路基板具有载板、多个内引脚及至少一个T型线路，该载板的表面定义有内接合区，该内接合区包含第一内接合区及第二内接合区，所述内引脚位于该第一内接合区，该T型线路位于该第二内接合区，该T型线路具有主线段、连接段及支线段，该主线段连接该连接段并沿着横向方向延伸，该支线段连接该连接段并沿着纵向方向朝向该第一内接合区延伸，该主线段沿着该纵向方向具有第一宽度，该连接段沿着该纵向方向具有第二宽度，该第二宽度小于该第一宽度，该芯片设置于该内接合区且具有多个第一凸块及至少一个第二凸块，该焊料层位于该线路基板及该芯片之间，所述第一凸块借由该焊料层接合于所述内引脚，该第二凸块借由该焊料层接合于该支线段。
较佳地，其中该支线段沿着该纵向方向朝向其中之一该内引脚延伸。
较佳地，其中该支线段沿着该纵向方向延伸至相邻两个该内引脚之间。
较佳地，其中该支线段具有第一端及第二端，该第一端连接该连接段，该第二端接合该第二凸块，该第一端的线宽大于该第二端的线宽。
较佳地，其中该支线段沿着该横向方向具有第三宽度，该第二宽度与该第三宽度的比值不小于0.5。
较佳地，其中该第二凸块沿着该横向方向具有第四宽度，该第二宽度与该第四宽度的比值小于2。
较佳地，其中该第二宽度及该第四宽度相同。
较佳地，其中该连接段沿着该横向方向具有第一长度，该第二凸块沿着该纵向方向具有第二长度，该第一长度与该第二长度的比值不小于4。
较佳地，其中该连接段至该第二凸块之间具有直线距离，该直线距离与该第二宽度的比值不小于3。
较佳地，其中该焊料层的厚度不大于0.30μm。
本发明另揭露一种线路基板，其包含载板、多个内引脚及至少一个T型线路，该载板具有表面，该表面定义有内接合区，该内接合区包含第一内接合区及第二内接合区，所述内引脚位于该第一内接合区，该T型线路位于该第二内接合区，该T型线路具有主线段、连接段及支线段，该主线段连接该连接段并沿着横向方向延伸，该支线段连接该连接段并沿着纵向方向朝向该第一内接合区延伸，该支线段用以接合凸块，该主线段沿着该纵向方向具有第一宽度，该连接段沿着该纵向方向具有第二宽度，该第二宽度小于该第一宽度。
较佳地，其中该支线段沿着该纵向方向朝向其中之一该内引脚延伸。
较佳地，其中该支线段沿着该纵向方向延伸至相邻两个该内引脚之间。
较佳地，其中该支线段具有第一端及第二端，该第一端连接该连接段，该第二端用以接合该凸块，该第一端的线宽大于该第二端的线宽。
较佳地，其中该支线段沿着该横向方向具有第三宽度，该第二宽度与该第三宽度的比值不小于0.5。
较佳地，其另包含焊料层，该焊料层形成于该支线段，该支线段借由该焊料层与该凸块接合。
较佳地，其中该焊料层的厚度不大于0.30μm。
当接合该线路基板及该芯片时，该焊料层会受热软化而从不同方向流向该支线段上的凸块接合处，因此本发明缩小该连接段宽度，减少自该连接段流向该支线段的焊料量，以避免焊料自凸块接合处向外溢流而导致桥接短路。
附图说明
图1：依据本发明之一较佳实施例，载板的俯视图。
图2：依据本发明之一较佳实施例，覆晶接合结构的俯视图。
图3：依据本发明之一较佳实施例，线路基板的内接合区的局部俯视图。
图4：依据本发明之一较佳实施例，线路基板的内接合区的局部俯视图。
图5：依据本发明之一较佳实施例，线路基板的内接合区的局部俯视图。
图6：依据本发明之一较佳实施例，线路基板的内接合区的局部俯视图。
图7：依据本发明之一较佳实施例，线路基板的内接合区的局部俯视图。
图8：沿图7A-A剖线的剖视图。
【主要元件符号说明】
100：线路基板 110：载板
111：表面 112：外接合区
113：内接合区 113a：第一内接合区
113b：第二内接合区 120：外引脚
130：内引脚 140：T型线路
141：主线段 142：连接段
143：支线段 143a：第一端
143b：第二端 200：芯片
210：第一凸块 220：第二凸块
300：防焊层 400：焊料层
500：封装胶体 D1：横向方向
D2：纵向方向 I：覆晶接合结构
L1：第一长度 L2：第二长度
LD：直线距离 W1：第一宽度
W2：第二宽度 W3：第三宽度
W4：第四宽度
具体实施方式
请参阅图1至图3，本发明揭露一种覆晶接合结构I，其可为薄膜覆晶封装结构(Chip on Film,COF)、玻璃覆晶封装结构(Chip on Glass,COG)或其他覆晶封装结构，该覆晶接合结构I包含线路基板100及芯片200，该线路基板100具有载板110、多个外引脚120及多个内引脚130，该载板110可由聚酰亚胺(polyimide,PI)、聚对苯二甲酸乙二酯(polyethylene terephthalate,PET)、玻璃、陶瓷、金属或其他材料所制成，该载板110具有表面111，所述外引脚120及所述内引脚130形成于该表面111，该表面111定义有二个外接合区112及内接合区113，所述外接合区112分别位于该载板110的两侧，该内接合区113位于所述外接合区112之间，所述外引脚120位于所述外接合区112内，所述内引脚130位于该内接合区113内。
请参阅图2及图3，较佳地，该覆晶接合结构I另具有防焊层300，该防焊层300覆盖该载板110的该表面111，并显露所述外接合区112及该内接合区113，该芯片200设置于该内接合区113，在本实施例中，该芯片200是借由热压合技术接合于所述内引脚130上，所述外引脚120用以接合外部装置(图未绘出)。
请参阅图3及图4，该内接合区113包含第一内接合区113a及第二内接合区113b，所述内引脚130位于该第一内接合区113a，该线路基板100另具有至少一个T型线路140，该T型线路140位于该第二内接合区113b，该T型线路140与所述内引脚130之间无电性连接，是用以接地或接电源，较佳地，该内接合区113包含二个第一内接合区113a，所述第一内接合区113a位于两侧，该第二内接合区113b位于所述第一内接合区113a之间，所述内引脚130沿着该内接合区113两侧边缘排列，该T型线路140位于两侧的所述内引脚130之间，较佳地，所述内引脚130及该T型线路140是经由图案化铜箔基材所形成。
请参阅图3及图4，其为本发明之一实施例，该T型线路140具有主线段141、连接段142及支线段143，该主线段141连接该连接段142并沿着横向方向D1延伸，该支线段143连接该连接段142并沿着纵向方向D2朝该第一内接合区113a延伸，该支线段143用以接合该芯片200的凸块，在本实施例中，该连接段142与该支线段143相互垂直，但本发明不以此为限制，该连接段142及该支线段143之间的夹角可大于、小于或等于90度。
较佳地，该线路基板100具有多个T型线路140，各该T型线路140的该主线段141沿着该横向方向D1相互连接，各该T型线路140的该支线段143沿着该纵向方向D2分别朝向该第一内接合区113a延伸。
图5、图6及图7为不同实施例的该支线段143，图5所示的该支线段143是沿着该纵向方向D2朝向其中之一该内引脚130延伸，但未连接该内引脚130，图6所示的该支线段143是沿着该纵向方向D2延伸至相邻两个该内引脚130之间，图7所示的该支线段143具有第一端143a及第二端143b，该第一端143a连接该连接段142，该第二端143b用以接合该芯片200的凸块，其中该第一端143a的线宽大于该第二端143b的线宽，以避免该连接段142与该支线段143之间发生断裂，较佳地，该第二端143b位于相邻两个该内引脚130之间。
请参阅图3至图8，该芯片200具有多个第一凸块210及至少一个第二凸块220，该覆晶接合结构I另具有焊料层400，该焊料层400位于该线路基板100及该芯片200之间，所述第一凸块210借由该焊料层400接合于所述内引脚130，该第二凸块220借由该焊料层400接合于该支线段143，较佳地，该焊料层400的厚度不大于0.30μm，更佳地，该焊料层400的厚度不大于0.20μm，在本实施例中，该线路基板100包含该焊料层400，该焊料层400形成于所述内引脚130及该T型线路140的该主线段141、该连接段142及该支线段143，其厚度为0.16μm±0.4μm，当接合该芯片200及该线路基板100时，所述内引脚130借由该焊料层400与所述第一凸块210接合，该支线段143借由该焊料层400与该第二凸块220接合。
请参阅图7，在本实施例中，该支线段143的该第二端143b是用以接合该第二凸块220，因此当该芯片200接合于该线路基板100时，该第二端143b借由该焊料层400接合该第二凸块220。
请参阅图8，较佳地，该覆晶接合结构I另具有封装胶体500，该封装胶体500填充于该线路基板100及该芯片200之间，该封装胶体500可为底部填充胶(underfill)，但本发明不以此为限制。
该焊料层400于热压合过程中会受热软化而具有流动性，当该第二凸块220接合于该支线段143时，位于该T型线路140上的该焊料层400会从不同方向流向该第二凸块220的接合处而增加溢流的发生率，为了避免发生桥接短路，本发明针对该T型线路140进行布线设计。
请参阅图4，该主线段141沿着该纵向方向D2具有第一宽度W1，该连接段142沿着该纵向方向D2具有第二宽度W2，该第二宽度W2小于该第一宽度W1，借由缩小该连接段142宽度，有效降低从该连接段142流向该支线段143的焊料量，因此可避免过多的焊料流向该第二凸块220而发生溢流，较佳地，该支线段143沿着该横向方向D1具有第三宽度W3，该第二宽度W2与该第三宽度W3的比值不小于0.5
Figure BDA0002543812850000071
其中当比值介于0.5及1时
Figure BDA0002543812850000072
Figure BDA0002543812850000073
表示该第二宽度W2小于该第三宽度W3，当比值等于1时
Figure BDA0002543812850000074
表示该第二宽度W2等于该第三宽度W3，当比值大于1时
Figure BDA0002543812850000075
表示该第二宽度W2大于该第三宽度W3，在本实施例中，该支线段143的线宽与所述内引脚130的线宽相同。
请参阅图5，该第二凸块220沿着该横向方向D1具有第四宽度W4，该第二宽度W2与该第四宽度W4的比值小于2
Figure BDA0002543812850000076
其中比值可介于1及2之间
Figure BDA0002543812850000077
即该第二宽度W2大于该第四宽度W4，但小于两倍的该第四宽度W4，比值可等于1
Figure BDA0002543812850000078
使该第二宽度W2及该第四宽度W4相同，比值亦可介于0及1之间
Figure BDA0002543812850000079
使该第二宽度W2小于该第四宽度W4，布线设计时可根据该第二凸块220的宽度决定该连接段142的宽度，使该第二宽度W2与该第四宽度W4的比值小于2。
请参阅图6，该连接段142沿着该横向方向D1具有第一长度L1，该第二凸块220沿着该纵向方向D2具有第二长度L2，该第一长度L1与该第二长度L2的比值不小于4
Figure BDA00025438128500000710
使该连接段142长度不小于4倍的该第二凸块220长度，因此可根据该第二凸块220的长度决定需要缩小宽度的该连接段142长度，在本实施例中，该支线段143位于该连接段142中央，即该支线段143至该连接段142两端的最短距离相同，但本发明不以此为限制，该支线段143可根据不同布线设计需求选择性地偏向该连接段142的其中一端。
请参阅图6，该连接段142边缘至该第二凸块220边缘之间具有直线距离LD，该直线距离LD为该连接段142与该第二凸块220之间的最短距离，当该焊料层400的厚度增加时，需要提高该直线距离LD与该第二宽度W2的比值，也就是该直线距离LD与该第二宽度W2的比值必须与该焊料层400的厚度成正比，以避免过多的焊料于热压合过程中流动至该支线段143与该第二凸块220的接合处，而造成桥接短路，较佳地，当该焊料层400的厚度为0.16μm时，该直线距离LD与该第二宽度W2的比值须不小于3
Figure BDA0002543812850000081
使该直线距离LD大于或等于3倍的该第二宽度W2，当该焊料层400的厚度为0.18μm时，该直线距离LD与该第二宽度W2的比值须不小于4
Figure BDA0002543812850000082
使该直线距离LD大于或等于4倍的该第二宽度W2。
为了避免过多的该焊料层400自该T型线路140流向该第二凸块220，本发明缩小该连接段142的宽度，借此减少自该连接段142流向该支线段143的焊料量，并可根据不同需求，选择性地调整该连接段142的宽度、长度及其与该第二凸块220之间的距离，以大幅降低因焊料溢流而桥接短路的发生率，有效提升产品良率。
本发明的保护范围当视申请专利范围所界定者为准，任何熟知此项技艺者，在不脱离本发明的精神和范围内所作的任何变化与修改，均属于本发明的保护范围。

Claims (17)

1.一种覆晶接合结构，其特征在于，其包含：
线路基板，具有载板、多个内引脚及至少一个T型线路，该载板的表面定义有内接合区，该内接合区包含第一内接合区及第二内接合区，所述内引脚位于该第一内接合区，该T型线路位于该第二内接合区，该T型线路具有主线段、连接段及支线段，该主线段连接该连接段并沿着横向方向延伸，该支线段连接该连接段并沿着纵向方向朝该第一内接合区延伸，该主线段沿着该纵向方向具有第一宽度，该连接段沿着该纵向方向具有第二宽度，该第二宽度小于该第一宽度；
芯片，设置于该内接合区，该芯片具有多个第一凸块及至少一个第二凸块；以及
焊料层，位于该线路基板及该芯片之间，所述第一凸块借由该焊料层接合于所述内引脚，该第二凸块借由该焊料层接合于该支线段。
2.根据权利要求1所述的覆晶接合结构，其特征在于，其中该支线段沿着该纵向方向朝向其中之一该内引脚延伸。
3.根据权利要求1所述的覆晶接合结构，其特征在于，其中该支线段沿着该纵向方向延伸至相邻两个该内引脚之间。
4.根据权利要求1所述的覆晶接合结构，其特征在于，其中该支线段具有第一端及第二端，该第一端连接该连接段，该第二端接合该第二凸块，该第一端的线宽大于该第二端的线宽。
5.根据权利要求1所述的覆晶接合结构，其特征在于，其中该支线段沿着该横向方向具有第三宽度，该第二宽度与该第三宽度的比值不小于0.5。
6.根据权利要求1所述的覆晶接合结构，其特征在于，其中该第二凸块沿着该横向方向具有第四宽度，该第二宽度与该第四宽度的比值小于2。
7.根据权利要求6所述的覆晶接合结构，其特征在于，其中该第二宽度及该第四宽度相同。
8.根据权利要求6所述的覆晶接合结构，其特征在于，其中该连接段沿着该横向方向具有第一长度，该第二凸块沿着该纵向方向具有第二长度，该第一长度与该第二长度的比值不小于4。
9.根据权利要求1所述的覆晶接合结构，其特征在于，其中该连接段至该第二凸块之间具有直线距离，该直线距离与该第二宽度的比值不小于3。
10.根据权利要求1所述的覆晶接合结构，其特征在于，其中该焊料层的厚度不大于0.30μm。
11.一种线路基板，其特征在于，其包含：
载板，具有表面，该表面定义有内接合区，该内接合区包含第一内接合区及第二内接合区；
多个内引脚，位于该第一内接合区；以及
至少一个T型线路，位于该第二内接合区，该T型线路具有主线段、连接段及支线段，该主线段连接该连接段并沿着横向方向延伸，该支线段连接该连接段并沿着纵向方向朝该第一内接合区延伸，该支线段用以接合凸块，该主线段沿着该纵向方向具有第一宽度，该连接段沿着该纵向方向具有第二宽度，该第二宽度小于该第一宽度。
12.根据权利要求11所述的线路基板，其特征在于，其中该支线段沿着该纵向方向朝向其中之一该内引脚延伸。
13.根据权利要求11所述的线路基板，其特征在于，其中该支线段沿着该纵向方向延伸至相邻两个该内引脚之间。
14.根据权利要求11所述的线路基板，其特征在于，其中该支线段具有第一端及第二端，该第一端连接该连接段，该第二端用以接合该凸块，该第一端的线宽大于该第二端的线宽。
15.根据权利要求11所述的线路基板，其特征在于，其中该支线段沿着该横向方向具有第三宽度，该第二宽度与该第三宽度的比值不小于0.5。
16.根据权利要求11所述的线路基板，其特征在于，其另包含焊料层，该焊料层形成于该支线段，该支线段借由该焊料层与该凸块接合。
17.根据权利要求16所述的线路基板，其特征在于，其中该焊料层的厚度不大于0.30μm。
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US9520853B2 (en) * 2015-03-09 2016-12-13 Raytheon Company Radio frequency (RF) series attenuator module for bridging two RF transmission lines on adjacent circuit substrates
TWI657545B (zh) * 2018-03-12 2019-04-21 頎邦科技股份有限公司 半導體封裝結構及其線路基板
TWI712136B (zh) * 2020-02-26 2020-12-01 頎邦科技股份有限公司 覆晶接合結構及其線路基板

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KR102408726B1 (ko) 2022-06-13
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TW202127966A (zh) 2021-07-16
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