TW200410611A - Pad-less design of high-density circuit board and its manufacturing method - Google Patents

Pad-less design of high-density circuit board and its manufacturing method Download PDF

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Publication number
TW200410611A
TW200410611A TW91135705A TW91135705A TW200410611A TW 200410611 A TW200410611 A TW 200410611A TW 91135705 A TW91135705 A TW 91135705A TW 91135705 A TW91135705 A TW 91135705A TW 200410611 A TW200410611 A TW 200410611A
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circuit board
external
patent application
scope
item
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TW91135705A
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TW551011B (en
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Han-Kun Hsieh
Wei-Feng Lin
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Silicon Integrated Sys Corp
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Abstract

A kind of pad-less design of high-density circuit board and its manufacturing method are revealed in the present invention. The invention includes the following steps: providing a circuit board substrate; forming an external circuit on the circuit board substrate, in which the external circuit contains plural external contacts and the width of external contact is not larger than the line width of the external circuit; forming a solder mask layer for covering the circuit board substrate and the external circuit, in which the solder mask layer is provided with plural solder mask openings to expose external contacts and the diameter of each solder mask opening is not larger than its exposed external contact width; and forming plural conductive bumps on the external contact within the opening range of the solder mask layer for connecting an external device, so as to form high-density circuit board with pad-less design.

Description

200410611 五、發明說明(1) 領域 製造明ί有關於—種無銲墊設計之高密度電路板及其 設叶之古二:別係有關於-種用於電子產品組裴之蛊銲墊 计之円岔度電路板及其製造方法。 .,,、 Α前後jg =市場上對電子產品要輕、薄、短、 板,放入爭夕沾带Γ计 夫,在有限面積的半導體基 H .更夕的電子70件之外;在電路板的設計上,特別 5其4封裝上述IC晶片連接的覆晶封裝基板、一般BGA封 板:或是用來連接半導體晶片封裝體、發光元件、連 必;;在另:電路板、或其他元件的電路板,也 貝在有限面積中,放入更高密度的電路走線。秋200410611 V. Description of the invention (1) The field of manufacture is related to a kind of high-density circuit board without pad design and the second one of its design: don't be related to it- a kind of pads used in the electronics product group The bifurcation degree circuit board and its manufacturing method. . ,,, Α before and after jg = electronic products on the market should be light, thin, short, and board, put in the Zixi band with Γ count, in a limited area semiconductor substrate H. more than 70 electronics; in In the design of the circuit board, special 5 and 4 packages of the above-mentioned IC chips are connected to the flip-chip package substrate, general BGA package: or used to connect semiconductor chip packages, light-emitting components, and even; in another: circuit boards, or Other components of the circuit board, also in a limited area, put higher density circuit traces. autumn

路設計中,其外部接點的設計成了;"上 冤路走線密度的一重要因素。 w丄I 請參考第1圖,係以一傳統的覆晶封裝基板為 在以外Λ接1"的設計如㈣其電路走線的密度造成限制。 在第1圖中,銲墊112為外部線路η〇的外部接點, 的直徑比通常為外部線路110線寬W的2〜1〇倍大,外 中各導線114之間的線距因此受到銲墊112的制約y 了不使相鄰的線路發生短路,外部線路11()中各導線丨’丨”、、 間的線距必須大於導線丨14線寬ψ與銲墊丨12直徑匕之和之 (W + RJ之一半。在設計線路間距大於18〇 的^路^時 ’尚未造成很大的影響;但是在設計例如覆晶封裝基板 電路板時,其所連接的j c晶片的接點間距常常小於认In the design of the road, the design of its external contacts has become an important factor in the density of the road. w 丄 I Please refer to Figure 1, which is based on a conventional flip-chip package substrate. The design of Λ1 " outside, such as the density of the circuit traces, limits it. In FIG. 1, the bonding pad 112 is an external contact of the external circuit η0, and its diameter is 2 to 10 times larger than the width W of the external circuit 110, which generally results in a line pitch between the outer and middle wires 114. Restrictions of the pad 112 prevent short circuits between adjacent lines. The wire spacing between the wires in the external circuit 11 () must be greater than the wire, 14 line width, and pad diameter. (W + RJ half and one half. When designing the circuit pitch greater than 18 ^ ^ ^ 'has not caused much impact; but when designing, for example, a flip-chip package substrate circuit board, the contacts of the jc chip to which it is connected Spacing is often less than

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πι ’常常有因受限於銲塾112直徑’而無法以縮小 110中各導線114之間的線距為手段來增加單 二= ,密度的情形了,只能以增加覆晶封裝基板!。。的積線内的線 板1〇°的面積來容納所需要的線路^ f本,,…最後成品尺寸的縮減。而在其他的電氣: ^ : Γ Ϊ辦例如一般ΜΑ封裝基板,或是用來連接半 ¥體明片封裝ϋ、發光元#、連接器、被動元彳、另 ::内:其他元件的電路板’也遇到了相同的問題。 一有鑑於此,本發明之主要目的係提供一種無銲墊設 · 之南密度電路板,在線路走線設計時,免除上述銲墊尺寸 2約因素’而能夠在不增加電路板的電路層數或表面積 的情形^在同-層的電路中,纟納更多的線路數量,以 降低上述高密度電路板的厚度、表面積與製造成本,並能 夠幫助最後成品尺寸的縮減。 本發明之另一目的係提供一種無銲墊設計之高密度電 路板之製造方法,在不增加電路板的電路層數或表面積的 It开y下,在同一層的電路中,容納更多的線路數量,以降 低上述高密度電路板的厚度、表面積與製造成本,並能夠 _ 幫助最後成品尺寸的縮減。 為達成本發明之上述目的,本發明係提供一種無銲墊 5又计之南密度電路板,包含·· 一電路板基材,上述電路板 基材的一表面為一介電質層;一外部線路,形成於上述介π ’often because of the limitation of the diameter of the solder pad 112, it is not possible to increase the unit size by reducing the line spacing between the wires 114 in 110 =. In the case of density, you can only increase the flip-chip package substrate! . The area of the wiring board within the product line is 10 ° to accommodate the required wiring, f ..., and finally the size of the finished product is reduced. And in other electrical: ^: Γ, for example, general MA packaging substrate, or used to connect half-body chip package, light emitting element #, connector, passive element, and other :: inside: the circuit of other components Board 'also encountered the same problem. In view of this, the main purpose of the present invention is to provide a non-padding circuit board with south density. When designing the wiring of the circuit, the above-mentioned factors of pad size are eliminated, and the circuit layer of the circuit board can not be increased. Number or surface area ^ In the same-layer circuit, a larger number of circuits can be accommodated to reduce the thickness, surface area, and manufacturing cost of the high-density circuit board described above, and can help reduce the size of the final product. Another object of the present invention is to provide a method for manufacturing a high-density circuit board without a pad design. It does not increase the number of circuit layers or the surface area of the circuit board, and accommodates more circuits in the same layer of circuits. The number of circuits can reduce the thickness, surface area and manufacturing cost of the high-density circuit board, and can help reduce the final product size. In order to achieve the above-mentioned object of the present invention, the present invention provides a solderless pad 5 and a south-density circuit board including a circuit board substrate, and one surface of the circuit board substrate is a dielectric layer; External circuit

ZUU410611 發明說明(3) 電質層上 部接點的寬^ ^ 1卜部線路包含複數個外部接點,且該些外 上述介電質i盥上外部線路的線寬;一防銲層,覆蓋 層開口,暖二ϊ ΐ述外部線路,該防銲層具有複數個防銲 不小於所暴露的Υ外。卩接點,上述防銲層開口的直徑分別 凸塊,分別报士述各外部接點的寬度;以及複數個導電 上,用以鱼二外:上2防銲層開口範圍内的上述外部接點 本〃、外。卩疋件形成電性連結。 方法,包含並一種無銲墊設計之高密度電路板的製造 面為-介電質斧:、:電路板基材,上述電路板基材的-表 述外部線路包‘複數=電質層上形成一外部線路,上 不大於爷外邱娩々外部接點,且上述外部接點的寬度 Γ線形成-防銲層,覆蓋上述㈡ 貝旧”上迷外部線路,上 4 ’丨电 ,曝露上述外部接# 、 θ,、有複數個防銲層開口 ^ Η ^ 卜卩接點’上述防銲層開口的直泸合S,丨π , 顯易士述和其…、特徵、和優點能更明 、 下文特舉出較佳實施例,並配合所附pi + , 細說明如下: 儿口所附圖式,作詳 實施方式 以下係以覆晶封裝基板為例,提出二告 應:比較例,•說明本發明之特徵與 = 般脱封裝基板,或是用來連接半導ZUU410611 Description of the invention (3) The width of the upper contact of the electrical layer ^ ^ 1 The line includes a plurality of external contacts, and the line width of the external circuit on the dielectric layer i; a solder resist layer, a cover layer Opening, warm second description of the external circuit, the solder mask has a plurality of solder masks not less than the exposed mask.卩 Contacts, the diameter of the above solder mask openings are bumps, respectively, to report the width of each external contact; and a plurality of conductive conductors, for the second fish: the above external contacts within the opening range of 2 solder masks Click on this, outside. The files form an electrical connection. Method, the manufacturing surface of a high-density circuit board including a padless design is-a dielectric axe ::: a circuit board substrate, the above-mentioned circuit board substrate-the expression external circuit package 'plurality = is formed on a dielectric layer An external circuit is not larger than the external contact of the external contact, and the width of the external contact Γ line forms a solder resist layer, covering the above-mentioned external circuit, which is exposed on the external circuit and exposed to the above. The external connection #, θ, there are a plurality of solder mask openings ^ Η ^ bu 卩 contact 'the above-mentioned solder mask openings S, π, it is easy to describe and its ..., characteristics, and advantages can be more The following is a detailed description of the preferred embodiments with the following pi +, and the detailed description is as follows: The drawings of the children's mouth, detailed implementation The following is a flip-chip package substrate as an example. , · Describe the characteristics of the present invention and the general de-packaged substrate, or used to connect the semiconductor

200410611200410611

元件、連接器、被動元件 路板上,料以應用本;明::::板、或其他元件的電 積、低厚产、高魂败~發月觀心來設計以及製造出小面 積低7子度冋線路密度的電路板。 第一實施例: 請參考第2A〜2C圖,仫u a0 ^ ^ . y f ^ 係一糸列之剖面圖,用以說明本 貫;例之作為覆晶封裝基板的無銲墊設計之高密 其製造方法。本發明可藉由無銲墊的設計了 ί 加间雄度電路板的線路齋庚 仏十1 冰岭在度,並在外部接點上形成導電凸Components, connectors, and passive component boards are designed for application; Ming :::: The electrical product, low-thickness output, high soul-loss of board or other components is designed and manufactured with low area and low area. 7 sub-degree circuit board with circuit density. First embodiment: Please refer to Figures 2A ~ 2C. 仫 u00 ^ ^. Yf ^ is a cross-sectional view to illustrate the principle; for example, the high-density pad design of a flip-chip package substrate method. In the present invention, a circuit without a solder pad can be designed. Ί The circuit of the circuit board with a high degree of stiffness. Zhai Geng 仏 10 1 degree of ice ridge, and a conductive bump is formed on the external contact.

塊來取代省知技術中4ΐτ Λ. L· JJU 八白力孜何甲鲜墊之功能,用以連接一形成有引腳 或凸塊的外部元件,包括下列步驟:, ,5丨腳 步驟一 請參考第2A圖,在電路板基材25〇上形成一外部線路 210。外部線路21〇具有複數條導線(化3“111^)214,外 部接點212通常位於導線214的—端,用以與—外部元件形 成電性連結,而適用於本發明第一實施例之覆晶封裝基板 200々的外部元件,可以是一Ic晶片、一電路板、或被動元 件等,而在本發明第一實施例中,外部接點212係在後述 的第一應用比較例中,與一 Ic晶片丨〇形成電性連結(請參 考第3B圖);而本發明之外部接點212的特徵在於其寬度不 大於導線2 1 4的線寬,因此,外部線路2 1 〇中的各導線2 j 4 之間的間距最小能夠縮小至約6〇 # m。 、 外部線路210的材質通常為銅,其形成方式可為:使 電路板基材250的一表面與一銅箔(未繪示於圖面)貼合,The block replaces the function of 4ΐτ Λ. L · JJU Babai Lizijia fresh pad in the provincial technology. It is used to connect an external component with a pin or a bump. It includes the following steps: Referring to FIG. 2A, an external circuit 210 is formed on the circuit board substrate 25. The external circuit 21 has a plurality of conductive lines (formed as "111") 214, and the external contact point 212 is usually located at the -end of the conductive line 214 to form an electrical connection with an external component, and is suitable for the first embodiment of the present invention. The external components of the flip-chip package substrate 200々 may be an IC chip, a circuit board, or a passive component. In the first embodiment of the present invention, the external contacts 212 are in a first application comparative example described later. An electrical connection is formed with an IC chip (refer to FIG. 3B); and the external contact 212 of the present invention is characterized in that its width is not greater than the line width of the wire 2 1 4. Therefore, the external line 2 1 0 The distance between the wires 2 j 4 can be reduced to a minimum of about 60m. The material of the external circuit 210 is usually copper, and the formation method can be as follows: a surface of the circuit board substrate 250 and a copper foil (not (Illustrated in the drawing)

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再蝕刻上述的銅箔以形成所要的外部線路21 〇 ;日 路板基材250的一表面施以一適當的罩幕未緣疋電 成錄(sputtering)等物理氣相沉積法將鋼原子形 =電路板基材25G ’形成外部線路⑴;再移除/述子的形罩 步驟二 ”B圖’將防銲層22〇以網版印刷法或旋轉塗 佈法70全覆盍電路板基材25 〇與外部線路2丨〇 ;再施以一 烤(pre-cure)措施,使防銲層22〇局部硬化;再以曝 顯影的方式,|防銲層220形成防銲層開口 222,曝 部接點212&,再施以一烘烤步冑,说防銲層22〇完全硬化 防銲層220的作用在於保護導線214在後續製程時不受 焊料污染而與鄰近的其他導線214橋接而發生短路現象, 亦保護導線2 14在覆晶封裝基板2 〇〇的儲存或使用過程中不 受水氣入侵而發生電遷移現象而與鄰近的其他導線214橋 接而發生短路現象。 防銲層開口 2 2 2的直控通常不小於外部接點21 2的寬度 ’而為外部接點21 2的寬度的1 · 2倍〜2倍大,較好為能使外 部接點21 2完全曝露。 步驟三 清參考第2 C圖’因應上述無辉墊設計之外部接點2 1 2 ’以無電解電鍍法將覆晶封裝基板2 〇 〇浸入一含所要鐘上 的導電凸塊230之成份的無電解電鍍溶液(未緣示於圖面)The above-mentioned copper foil is etched again to form the desired external circuit 21; one surface of the substrate of the circuit board 250 is subjected to a suitable masking physical vapor deposition method such as sputtering, and the steel is atomically shaped = Circuit board substrate 25G 'Form external circuit; remove / remove the shape cover Step 2 "B picture'" Cover the circuit board base with solder mask 22 by screen printing or spin coating 70 Material 25 〇 and the external circuit 2 丨 0; and then apply a pre-cure measures to partially harden the solder mask layer 22; and then by way of exposure development, the solder mask 220 forms a solder mask opening 222, The exposed part contact 212 & is then subjected to a baking step, saying that the solder resist layer 22 is completely hardened. The role of the solder resist layer 220 is to protect the wire 214 from being contaminated by solder during subsequent processes and to bridge with other neighboring wires 214. The occurrence of a short circuit also protects the wires 2 14 from electromigration during the storage or use of the flip-chip package substrate 2000, and bridges with other neighboring wires 214 to cause a short circuit. The direct control of the opening 2 2 2 is usually not less than the width of the external contact 21 2 'The width of the external contact 21 2 is 1 to 2 times to 2 times as large, and it is preferable that the external contact 21 2 is fully exposed. Step 3 refers to Figure 2C.' Contact 2 1 2 'The electroless plating method is used to immerse the flip-chip package substrate 2000 in an electroless plating solution containing the components of the conductive bump 230 on the clock (not shown in the figure).

rif02-8994TW(nl);91P61;Dwwang.ptd 第 9 頁 200410611 五、發明說明(6) 中在外部接點212上形成導電凸塊23〇來取代習知技術中 銲墊之功能。 導電凸塊23 0的高度不高於防銲層220,以方便在後續 的封裝製程中與形成有覆晶凸塊的Ic晶片結合。而導電凸 塊2 30的材質可以是:銅、鍍上金的鎳、錫鉛合金、或不 含鉛的錫基合金。 另外’如果覆晶封裝基板2 〇 〇是具有二層以上線路的 層積電路板,電路板基材25 0係一表面為一介電質層的層 積電路基板,在步驟一形成外部線路2丨〇之前,必須在上 述介電質層上形成複數個導通孔(via h〇ie)(未繪示於圖 面)’並以濺鍍等物理氣相沉積法在上述導通孔形成一材 質較好為銅的金屬層,在形成外部線路21〇之後,導線21 4 的另一端可以與電路板基材250内的層積電路形成電路連 結。前述内容係一習知之技術,且非相關本發明之特徵, 故僅簡述於本發明第一實施例之步驟之後。 如果覆晶封裝基板2 〇〇是具有一層線路的電路板,電 路板基材250係為一介電質層,導線214的另一端通常成為 另 種形式的外部接點(未繪示於圖面),通常與外部接^ 212連接不同的外部元件,而在完成上述步驟三後,尚包 含在電路板基材25 0的另一表面形成複數個開口以曝露出 上述與外部接點2 1 2連接不同的外部元件的另一種形式的 外部接點。前述内容係一習知之技術,且非相關本發明之 特徵’故僅簡述於本發明第一實施例之步驟之後。rif02-8994TW (nl); 91P61; Dwwang.ptd page 9 200410611 V. In the description of the invention (6), a conductive bump 23 is formed on the external contact 212 to replace the function of the pad in the conventional technology. The height of the conductive bump 230 is not higher than the solder resist layer 220, so as to facilitate the bonding with the IC chip with the flip-chip bump formed in the subsequent packaging process. The conductive bumps 2 30 can be made of copper, gold-plated nickel, tin-lead alloy, or tin-based alloys that do not contain lead. In addition, if the flip-chip package substrate 2000 is a laminated circuit board with more than two layers of circuits, the circuit board substrate 250 is a laminated circuit substrate with a dielectric layer on one surface, and the external circuit 2 is formed in step 1.丨 〇 Before, a plurality of via holes (via h0ie) (not shown in the drawing) must be formed on the dielectric layer and a material is formed on the via hole by a physical vapor deposition method such as sputtering. It is preferably a metal layer of copper. After the external circuit 21o is formed, the other end of the conductive wire 21 4 may be connected to the laminated circuit in the circuit board substrate 250 to form a circuit. The foregoing is a conventional technique and is not related to the features of the present invention, so it is only briefly described after the steps of the first embodiment of the present invention. If the flip-chip package substrate 2000 is a circuit board with one layer of circuit, the circuit board substrate 250 is a dielectric layer, and the other end of the wire 214 usually becomes another form of external contact (not shown in the figure) ), Usually with different external components ^ 212 to connect different external components, and after completing the above three steps, still includes forming a plurality of openings on the other surface of the circuit board substrate 250 to expose the above external contacts 2 1 2 Another form of external contact that connects different external components. The foregoing is a conventional technique and is not related to the features of the present invention ', so it is only briefly described after the steps of the first embodiment of the present invention.

200410611200410611

圖之其Λ 3A圖之覆晶封裝基板300與㈣ = 係同為被設計來與具有覆晶凸塊12 星右Γ=°δ的覆晶封裝基板’惟覆晶封裝基板300係 =示具有銲塾設計的電路板;而覆晶封裝基 板200係上述本發明之第一實施例之作為覆晶封裝基板 無銲墊設計之高密度電路板。 比較覆晶封裝基板3 00與覆晶封裝基板2〇〇 :覆晶封裝 基板20 0具有無銲墊設計的外部接點212,在第3b圖中外^ 接點212之間可容許二條導線214通過;而覆晶封裝基板 300具有直徑大於所屬之導線314線寬的銲墊312,在第μ 圖中,銲墊312具有與第3Β圖中的外部接點212相同的間距 ,而只能容納一條導線314通過;因此覆晶封裝基板2〇〇因 具有較大的線路密度而可以具有較少的電路層數或表面積 ^有利於後製的最後成品體積的縮減,係達成本發明之、 在不增加電路板的電路層數或表面積的情形下,在同— 層的電路中,谷納更多的線路數量,以降低上述高密度電 路板的厚度、表面積與製造成本,並能夠幫助最後成品尺 寸的縮減」的目的。 另外第3 Α圖中的覆晶封裝基板3 〇 〇與I c晶片1 〇結合後 ’ ^具有較大的銲墊312的設計,覆晶凸塊12在結合後, 其高度會減少而寬度增加,增加了鄰近的覆晶凸塊1 2橋接 而發生短路的風險。不只在覆晶封裝基板的應用上,在其 他的領域中’例如用來連接半導體晶片封裝體、發光元件Figure Λ 3A of the flip-chip package substrate 300 and ㈣ = are both designed to be the same as the flip-chip package substrate with flip-chip bumps 12 star right Γ = ° δ. A circuit board designed by soldering; and the flip-chip package substrate 200 is a high-density circuit board designed as a flip-chip package substrate without a pad in the first embodiment of the present invention. Comparing the flip-chip package substrate 300 with the flip-chip package substrate 2000: The flip-chip package substrate 200 has a padless external contact 212, and two wires 214 can be allowed to pass between the external contact 212 in FIG. 3b The flip-chip package substrate 300 has solder pads 312 having a diameter larger than the line width of the wires 314. In the μ diagram, the solder pads 312 have the same pitch as the external contacts 212 in FIG. 3B, and can only accommodate one pad. The lead 314 passes; therefore, the flip-chip package substrate 200 can have a smaller number of circuit layers or surface area due to its larger circuit density. It is conducive to the reduction of the volume of the final product of the post-production. In the case of increasing the number of circuit layers or surface area of the circuit board, in the same-layer circuit, the number of circuits is increased to reduce the thickness, surface area and manufacturing cost of the high-density circuit board, and can help the final product size Reduction. " In addition, after the flip-chip package substrate 300 in FIG. 3A is combined with the IC chip 10, the design of the large solder pad 312 is large. After the flip-chip bump 12 is combined, its height decreases and its width increases. , Which increases the risk of short-circuiting due to bridging of adjacent flip-chip bumps 12. Not only in the application of flip-chip packaging substrates, but also in other fields ’, for example, to connect semiconductor chip packages and light-emitting devices.

200410611 五、發明說明(8) 、連接器、被動7L件、另一電路板、或其他 上,在連接其上述所要連接的外部元件之 2的電路板 上述增加鄰近的覆晶凸塊12橋接而發 發生如同 問題。而特別在覆晶封裝基板的應用i,::::的同樣 程中必須在覆晶封裝基板30 0與1(:晶片10 的封裝製 (under f i 11)的製程;而上述覆曰 订真底膠 度的增加,思味者在灌底膠的製程中底膠流战/與見 係造成填底#製程時間的延長以 & =減少 (void)的風險。 知土展膠空洞 然而’第3B圖中本發明第一實施例之作為覆 ?200的無銲墊設計之高密度電路板 銲曰a y 外部接點212與取代鲜墊功能的凸塊23〇,在^塾曰^之 合後’覆晶凸塊12的高度與寬度幾 =到1:片2 7鄰近的覆晶凸塊12因橋接而短路的風險覆?: 裝基板的應用上,在其他的# # 在覆日日封 晶片封裝體、發光元; 牛;;:中被:如:來連接半導體 、或其他元件的電路板上,在m?件、*-電路板 元件之後,亦減低了如上述述所要連接的外部 ^ ^ ^ 】如上建鄰近的覆晶凸塊1 2橋接而發生 S因ί Ϊ Ϊ: : Ϊ問題。而特別在覆晶封裝基板的應用上 的高度與寬度幾乎不會受到影響,在 ? : 1裝基板20 0與1(;晶片J 〇之間可有足夠的空間在填充 底膝k供底膠流動,不但可減少填底膠的製程時間,亦可 以降低發生底膠空洞的風&。上述係本發明之無鲜塾設計 之南抢度電路板在「在不增加電路板的電路層數或表面積200410611 V. Description of the invention (8), connector, passive 7L piece, another circuit board, or other, on the circuit board connecting 2 of the above-mentioned external components to be connected, the above-mentioned addition of the adjacent flip-chip bump 12 bridges and It happened like a problem. In particular, the application of the flip-chip package substrate i :::: must be performed in the same process as the flip-chip package substrates 300 and 1 (under chip 11); The increase in the base rubber degree, the thinker in the process of filling the bottom glue in the bottom glue flow / and see the system caused the bottom filling # process time extension with & = reduce the risk of void. In FIG. 3B, the first embodiment of the present invention is a high-density circuit board with a padless design of 200? The external contact 212 and the bump 23 which replaces the function of the fresh pad are combined. What is the height and width of the rear flip-chip bump 12 = to 1: the chip 2 7 The risk of short-circuit of the neighboring flip-chip bump 12 due to bridging ?: In the application of mounting substrates, in other # # Encapsulation chip package, light emitting element; cattle ;; quilt: such as: to connect semiconductor or other components on the circuit board, after m? Pieces, * -circuit board components, also reduces the number of connections to be connected as described above (External ^ ^ ^) As above, the adjacent flip-chip bumps 1 and 2 are bridged and S occurs because of ί Ϊ ::: Ϊ problem. Especially in flip-chip sealing The height and width of the application of the substrate are hardly affected. There is enough space between the mounting substrates 20 0 and 1 (; wafer J 〇) to fill the bottom knee k for the primer to flow, which can reduce the filling. The processing time of the primer can also reduce the wind & that occurs in the cavity of the primer. The above-mentioned southern rush-free circuit board of the present invention is designed without increasing the number of circuit layers or surface area of the circuit board.

200410611200410611

的情形下,在同一 降低上述高密度電 夠幫助最後成品尺 附加優點。 層的電路中,容納 路板的厚度、表面 寸的縮減」之外, 更多的線路數量,以 積與製造成本,並能 再為產業界所提供的 第一貫施例: 請參考第4A〜4D圖,俜一备而丨+ 發明第二實施例之作為覆曰二歹匕剖面圖,用以說明本 :法。本發明可藉由無鲜墊的設計,: 路密度,並在外部接點上形成導電: 塊的外部元件。 塾之功用以連接-無引腳或凸 U明第二實施例之覆晶封裝基板4〇 方 步驟一與步驟二與上述第-實施例㈣,故在此 ίίϊ ’請參考上述本發明之第―實施例之步驟-盘牛 驟二與第2 Α〜2Β圖之說明。 ”步 步驟^ 請參考第4A〜4C圖,因應上述無銲墊設計之外 1/二鑛法在外部#點412上形成導電凸塊43。來^ "知技術中銲塾之功能。上述的電錢法尚包含下列子步驟 防請參考第4Α^,形成—導電的金屬層440,覆蓋在 = :: 420、P方銲層開口 422和外部接點412上;金屬層 的形成方式可以是例如為濺链法的物理氣相沉積法。In the case of the same, reducing the above-mentioned high-density electricity can help the final product with additional advantages. In the layered circuit, the thickness of the circuit board and the reduction in surface size are accommodated. In addition, the number of circuits is larger, in order to increase product and manufacturing costs, and can be the first consistent example provided by the industry. Please refer to Section 4A The ~ 4D figure is prepared, and the second embodiment of the invention is a cross-sectional view of the second embodiment, which is used to explain this method. The invention can adopt the design of a fresh pad, the density of the road, and an external element of a conductive conductive block formed on the external contact. The work of 用以 is used to connect-no pins or convex U. The flip-chip package substrate 40 of the second embodiment, step 1 and step 2 and the above-mentioned first embodiment ㈣, so here please refer to the above-mentioned first paragraph of the present invention ―Steps of the Example-Explanation of Panniu Step 2 and 2A ~ 2B. Step by step ^ Please refer to Figures 4A to 4C. In accordance with the above-mentioned padless design, the conductive bump 43 is formed on the external #point 412 in accordance with the 1/2 / two-ore method. Come to the function of the welding pad in the known technology. The above The electric money method also includes the following sub-steps. Please refer to Section 4A ^, Forming-a conductive metal layer 440, which covers = :: 420, P square welding layer openings 422, and external contacts 412. The metal layer can be formed in the following manner: This is a physical vapor deposition method such as a sputtering chain method.

200410611 五、發明說明(10) (2)請參考第4B圖,形成阻劑層460,覆蓋在金屬層 上後將阻劑層460圖形化’形成阻劑層開口 462以曝 露出覆蓋在防銲層開口 422和外部接點412上的金屬層440 ’再將覆晶封裝基板4〇〇置於一電鍍液(未繪示於圖面)中 ’並使金屬層44 0通電,將導電凸塊430鍍在外部接點4 12 上。以及 (3)請參考第4C圖,將覆蓋在防銲層420上的阻劑層 460以及金屬層440去除。 一導電凸塊430的高度高於防銲層42 0,而導電凸塊43〇 的同度較好為高於防銲層42〇的厚度2〇 〜6〇 vm,以方 便在後續的封裝製程中與無覆晶凸塊'的IC晶片結合。而導 電凸塊430的材質可以是··銅、金、錫鉛合金、 的錫基合金。 :¾不3乳 、請參考第4D圖,如果導電凸塊430的材質為銅或金, 為了幫助與無覆晶凸塊的IC晶片連結後的迴銲幻製 程、,可以熱浸鍍、噴附、電鍍等方式,將金屬声432 = 的表面上。而金屬層432的材質;以是錫鉛 口金或不3鉛的錫基合金。另外上述的熱浸鍍的方式係將 導電凸塊430浸入錫鉛合金或不含鉛的錫基合 /、、 ’:以在導電凸塊43 0的表面上形成金屬層432 ;而喷:的方 1係將錫鉛合金或不含鉛的錫基合金的熔湯噴在導電凸塊 430的表面上以形成金屬層432 ;而電鍍的式 上 述(2)中一併實施。 八了併入上 然而,如果導電凸塊43 0的材質僅為鋼或金,可藉由 .Q702-8994TWF(nl) ;91P61 ;Dwwang.ptd 第14頁 200410611 五、發明說明(11) 一導電膠的製程,不經迴銲就可使覆晶封裝基板4〇〇連接 上述無覆晶凸塊的IC晶片。此部份將描述於後述的第二應 用比較例中。 另外’覆晶封裝基板4 0 0亦可以是具有二層以上線路 的層積電路板或是具有一層線路的電路板的情形,亦如同 在上述第一實施例的步驟三之後的描述,在此亦省略。 第二應用比較例: 請參考第3A圖與第5A〜5C圖,第3A圖之覆晶封裝基板 3 0 0係同為被設計來與具有覆晶凸塊丨2之I c晶片1 〇結合的 覆晶封裝基板;而第5A〜5C圖之覆晶封裝基板4〇〇係同為被 設計來與無覆晶凸塊之{ c晶片2〇結合的覆晶封裝基板;其 中1C晶片1〇與1C晶片20僅在有無覆晶凸塊12的差別,兩者 係具有相同的設計與功能的IC晶片。覆晶封裝基板3〇〇係 具有如第1圖所示具有銲墊設計的電路板;而覆晶封裝基 板400係上述本發明之第二實施例之作為覆晶封裝基板的 無銲墊設計之高密度電路板。 比較覆晶封裝基板3 00與覆晶封裝基板4〇〇 ··覆晶封裝 基板40 0具有無銲墊設計的外部接點412,在第5A〜5(:圖中 外部接點41 2之間可容許二條導線414通過;而覆晶封裝基 板300具有直徑大於所屬之導線3 14線寬的銲墊3 1 2,在第 3A圖中,銲墊3 12具有與第5A〜5C圖中的外部接點412相同 的間距,而只能容納一條導線3丨4通過;因此覆晶封裴基 板400因具有較大的線路密度而可以具有較少的電路層數200410611 V. Description of the invention (10) (2) Please refer to FIG. 4B to form a resist layer 460. After covering the metal layer, pattern the resist layer 460 to form a resist layer opening 462 to expose and cover the solder resist. Layer opening 422 and the metal layer 440 on the external contact 412 'then placing the flip-chip package substrate 400 in a plating solution (not shown in the drawing)' and energizing the metal layer 4 40 to conduct the conductive bumps 430 is plated on the external contacts 4 12. (3) Please refer to FIG. 4C to remove the resist layer 460 and the metal layer 440 covering the solder resist layer 420. The height of a conductive bump 430 is higher than the solder mask 420, and the same degree of the conductive bump 43 is preferably higher than the thickness of the solder mask 420 by 20 to 60 vm so as to facilitate the subsequent packaging process. In combination with IC chip without flip-chip bumps. The material of the conductive bump 430 may be copper, gold, tin-lead alloy, or tin-based alloy. : ¾ No 3 milk, please refer to Figure 4D. If the material of the conductive bump 430 is copper or gold, in order to help the magic process of re-soldering after connecting with the IC chip without flip-chip bumps, hot dip plating, spray coating can be used. Attach, electroplating, etc., the metal sound 432 = on the surface. The material of the metal layer 432 is tin-lead gold or tin-based alloy without 3 lead. In addition, the above-mentioned hot dip plating method is to immerse the conductive bump 430 in a tin-lead alloy or lead-free tin-based alloy to form a metal layer 432 on the surface of the conductive bump 430; and spray: Formula 1 is a method in which a molten tin of a tin-lead alloy or a tin-based alloy containing no lead is sprayed on the surface of the conductive bump 430 to form a metal layer 432. The plating method is implemented in the above (2). Eight are incorporated. However, if the material of the conductive bump 43 0 is only steel or gold, you can use .Q702-8994TWF (nl); 91P61; Dwwang.ptd Page 14 200410611 V. Description of the invention (11) A conductive In the manufacturing process of the adhesive, the flip-chip package substrate 400 can be connected to the IC chip without the flip-chip bump without re-soldering. This portion will be described in a second application comparative example described later. In addition, the case of the flip-chip package substrate 400 can also be a laminated circuit board with more than two layers of circuits or a circuit board with one layer of circuits, as described after step 3 of the first embodiment above, here Also omitted. Second application comparative example: Please refer to FIG. 3A and FIGS. 5A to 5C. The flip-chip package substrate 3 0 0 of FIG. 3A is also designed to be combined with an IC chip 1 with flip-chip bumps 2 The flip-chip package substrate 400 shown in Figures 5A to 5C is the same as the flip-chip package substrate designed to be combined with the {c-chip 2o without the flip-chip bumps; 1C chip 1〇 The difference between the 1C chip 20 and the presence or absence of the flip-chip bumps 12 is that they are IC chips with the same design and function. The flip-chip package substrate 300 is a circuit board having a pad design as shown in FIG. 1; and the flip-chip package substrate 400 is a padless design of the flip-chip package substrate according to the second embodiment of the present invention described above. High density circuit board. Compare the flip-chip package substrate 300 with the flip-chip package substrate 400. The flip-chip package substrate 400 has a padless external contact 412 between the 5A to 5 (: external contact 41 2 in the figure) Two wires 414 are allowed to pass through; the flip-chip package substrate 300 has pads 3 1 2 having a diameter larger than the wire 3 14 of the respective wires. In FIG. 3A, the pads 3 12 have the same outer dimensions as those in FIGS. 5A to 5C. The contacts 412 have the same pitch and can only accommodate one wire 3 丨 4 to pass through. Therefore, the flip-chip substrate 400 can have a smaller number of circuit layers due to its larger circuit density.

200410611 五、發明說明(12) 或表面積,有利於後製的最後成品體積的縮減,係達成本 發明之「在不增加電路板的電路層數或表面積的情形下, 在同一層的電路中,容納更多的線路數量,以降低上述高 检度電路板的厚度、表面積與製造成本,並能夠幫助最後 成品尺寸的縮減」的目的。 請參考第5A〜5C圖,本發明第二實施例之作為覆晶封 裝基板的無銲塾設計之高密度電路板因具有高度高於防銲 層420的導電凸塊4 3〇,與其連接的外部元件Ic晶片2〇可以 不作形成凸塊的製程而直接與覆晶封裝基板4〇〇形成電性 連接。然而,不只在覆晶封裝基板的應用上,在其他的領 ,中、’例如用來連接半導體晶片封裝'體、發光元件、連接 =被動元件、另一電路板、或其他外部元件的電路板的 I制i,上述的外部元件都可以跳過例如植球等形成引腳 少ί ίi ί與面密度電路板形成電性連接’如此可以減 i 或電子產品組裝的製程步驟,不但可以縮短 、’ θ加產出,而且在減少一製程步驟便減少一次 良率降低的風險的情形下,f可梧 產成太· i ^ 更可以挺升製程良率,降低生 ’再為產業界提供上述的附加優點。 ,因= :的覆晶封裝基板3 00與Ic晶片10結合後 盆古^, 墊312的設計,覆晶凸塊12在結合後, 度增加,增加了鄰近的覆晶凸塊12橋接 他的領域中,例如 ^ - 、連接哭、#叙_ μ 日片封裝體、發光元件 接…皮動凡件、另一電路板、或其他元件的電路板 1 ::JQ702- 8994TW(nl);91P61;Dwwang ptd 第16頁 200410611 五、發明說明(13)200410611 V. Description of the invention (12) or surface area is beneficial to the reduction of the volume of the final product of the post-production, which is the cost of the invention "without increasing the number of circuit layers or surface area of the circuit board, in the circuit of the same layer, To accommodate a larger number of circuits in order to reduce the thickness, surface area, and manufacturing cost of the above-mentioned highly inspected circuit board, and to help reduce the size of the final product ". Please refer to FIGS. 5A to 5C. The second embodiment of the present invention is a flip-chip package substrate of a solderless design high-density circuit board having a conductive bump 4 30 which is higher than the solder mask layer 420. The external component IC wafer 20 can directly form an electrical connection with the flip-chip package substrate 400 without a bump forming process. However, not only in the application of flip-chip packaging substrates, but also in other fields, such as a circuit board that is used to connect a semiconductor chip package, a light-emitting element, connection = passive element, another circuit board, or other external components. The above-mentioned external components can be skipped to form a pin such as a ball, etc. to form an electrical connection with the areal density circuit board. This can reduce the manufacturing steps of i or the assembly of electronic products, not only shortening, 'θ plus output, and in the case of reducing one process step and reducing the risk of yield reduction once, f can be produced into a too. i ^ can also increase the process yield and reduce production. Additional advantages. Due to the combination of the flip-chip package substrate 3 00 and the IC chip 10, the design of the pad 312, the flip-chip bump 12 increases in degree after the bonding, and the neighboring flip-chip bump 12 bridges his In the field, for example, ^-, connection cry, # 述 _ μ Japanese film package, light-emitting element connection ... leather moving parts, another circuit board, or circuit board of other components 1: JQ702- 8994TW (nl); 91P61 ; Dwwang ptd Page 16 200410611 V. Description of the Invention (13)

十:在連接其上述所要連接的外部元件之後,亦 上述增加鄰近的覆晶凸坡〗2 生如R pps。1 塊1 2橋接而發生短路的風險的同樣 鋥中二音J:在覆晶封裝基板的應用i,在後續的封裝製 (unde ; π Π 3 0 1 C ^ 1 〇 - ^ ^ ^ Λ 、衣私,而上述覆晶凸塊1 2高度的減少與寬 :4 ^加,意味著在灌底膠的製程中底膠流動空間的減少 係造成填底膠製程時間的延長以及增加發生底膠空广 (void)的風險。 然而,第5A〜5C圖中本發明第二實施例之作為 裝基板400的無銲墊設計之高密度電路板因具有無銲塾曰設 计之外部接點41 2與取代銲墊功能的凸塊43〇,在盥Ic曰 2〇結合後,導電凸塊43〇的高度與寬度幾乎不會受到影θ曰塑 ’降低了鄰近的導電凸塊43 0因橋接而短路的風險。^二 在覆晶封裝基板的應用上,在其他的領域中,例如用來連 接半導體晶片封裝體、發光元件、連接器、被動元件、另 一電路板、或其他元件的電路板上,在連接其上述所要連 接的外部元件之後,亦減低了如上述鄰近的導電凸塊43〇 橋接而發生短路的風險的同樣問題。而特別在覆晶封裝基 板的應用上,可藉由在覆晶封裝基板4〇{)的製程中09調整 <導" 電凸塊430的高度與寬度,來使得填充底膠製程時”,在覆 曰曰封裝基板400與1C晶片20之間可有足夠的空間在填充底 膠時供底膠流動,不但可減少填底膠的製程時間,亦可以 降低發生底膠空洞的風險。上述係本發明之無鮮塾設計之 高密度電路板在「在不增加電路板的電路層數或表面積的Ten: After connecting the external components to be connected as described above, increase the neighboring flip-chip bumps as described above, such as R pps. The risk of a short circuit occurring when 1 block is bridged to 2 is the same. Second tone J: Application in flip chip packaging substrate i, in subsequent packaging (unde; π Π 3 0 1 C ^ 1 〇 ^ ^ ^ Λ, Clothing, and the above-mentioned flip-chip bumps 12 decrease in height and width: 4 ^ increase, which means that in the process of filling the bottom of the glue to reduce the flow of the primer is caused by the extension of the filling process and increase the occurrence of primer The risk of void. However, the high-density circuit board with a padless design as the mounting substrate 400 in the second embodiment of the present invention in FIGS. 5A to 5C has external contacts without a solderless design 41 2 and the bump 43 instead of the solder pad function. After the combination of Ic and 20, the height and width of the conductive bump 43 will be hardly affected by the difference. The adjacent conductive bump 43 is reduced due to bridging. The risk of a short circuit. ^ In the application of flip-chip packaging substrates, in other areas, such as circuits used to connect semiconductor chip packages, light-emitting components, connectors, passive components, another circuit board, or other components On the board, after connecting the external components to be connected as described above, The same problem as the risk of short-circuiting of the adjacent conductive bumps 43 bridged as described above is reduced. Especially in the application of the flip-chip package substrate, it can be adjusted by 09 in the process of the flip-chip package substrate 40 () "Guide" the height and width of the electric bumps 430, so that when filling the primer process, there is enough space between the package substrate 400 and the 1C chip 20 for the primer to flow when the primer is filled, Not only can reduce the process time of primer filling, but also reduce the risk of occurrence of primer voids. The above-mentioned high-density circuit board of the present invention is designed without increasing the number of circuit layers or surface area of the circuit board.

9]p2-8994TW(nl);91P61;Dwwang.ptd 200410611 五、發明說明(14) 情形下’在同一層的電路中,容納更多的線路數量,以降 低上述高密度電路板的厚度、表面積與製造成本,並能夠 幫助最後成品尺寸的縮減」之外,再為產業界所提供 加優點。 ' 附帶一提,在第5A圖中,在導電凸塊43〇的材質為銅 或金的情形下,在覆晶封裝基板4〇()與1(:晶片2〇接合時’, 可以網版印刷(screen print)或沾附(dipping)的方式 導電凸塊430上形成一導電膠3〇後,覆晶封裝基板4〇〇 經傳統的迴銲製程,直接與1(:晶片2〇形成電性連結; ’在第5B圖中,在導電凸塊43〇的材質為銅或金的情形下 ,如果要以傳統的迴銲製程使覆晶封,裝基板4〇〇盥K曰 可先在導電凸塊43°上形成-材質為錫錯:ί ,不3錯的錫基合金的金屬層432,再經由迴銲製程使 板4 00與1C晶片20形成電性連接 ; 的的材質為錫錯合金或不含錯=基π 的if形下’可直接經由迴銲萝曰 晶片20形成電性連接。雖秋:=:曰曰封裝基板4〇〇與1C 計之高密度電路板在覆晶封=:本$明之無銲墊設 以應用在其他的領域中:J 半=觀念亦可 件的電路板上。 千另 電路板、或其他元 雖然本發明已以起 限定本發明,任何熟習此;】Γ 離;其並非用以 和範圍内,當可作些許之潤:不= 0702.8994TW(nl);91P61;Dwwang.9] p2-8994TW (nl); 91P61; Dwwang.ptd 200410611 V. Description of the invention (14) In the case of 'in the same layer of the circuit, accommodate more circuits in order to reduce the thickness and surface area of the above-mentioned high-density circuit board And manufacturing costs, and can help reduce the size of the final product, "in addition to providing advantages for the industry. 'In addition, in FIG. 5A, when the material of the conductive bump 43o is copper or gold, when the flip-chip package substrate 4o () and 1 (: wafer 20 are bonded), the screen can be used. After a conductive paste 30 is formed on the conductive bump 430 in a screen print or dipping manner, the flip-chip package substrate 400 is directly formed with 1 (: wafer 20) through a conventional reflow soldering process. In the case of FIG. 5B, in the case that the material of the conductive bump 43o is copper or gold, if the flip-chip is to be sealed by the traditional re-soldering process, the mounting substrate 400 may be placed in The conductive bumps are formed at 43 °-the material is tin fault: ί, not 3 wrong tin-based alloy metal layer 432, and then the board 400 and the 1C wafer 20 are electrically connected through a reflow process; the material is tin Wrong alloy or if-shaped without fault = base π can form an electrical connection directly by re-soldering wafer 20. Although autumn: =: said package substrate 400 and 1C high-density circuit boards are covered Crystal Seal =: This Ming Ming pad is designed to be used in other fields: J Semi = concept can also be a circuit board. Another circuit board, or other Although the invention has to be limiting of the present invention, any of those skilled in this;} Γ away; it is not used and the range, can be made to run a little of: no = 0702.8994TW (nl); 91P61; Dwwang.

Ptd 第18頁 200410611 五、發明說明(15) 範圍當視後附之申請專利範圍所界定者為準。 ill·! 第19頁 0702-8994TWF(nl);91P61;Dwwang.ptd 200410611 圖式簡單說明 第1圖為一上視圖,係以一 制。 /、電路走線的密度造成限 第2 A〜2C圖為—系列剖面w,用 施例之作為覆晶封裝基板說月本發明第-實 其製造方法。 蛩又冲之问岔度電路板及 第3 A〜3B圖為—系列剖面圖, — 施::作為覆晶封裝基板的無銲墊又二明-實 一傳統的覆晶封裝基板。 在度電路板與 第巧〜4D圖為-系列剖面圖’用以說 杏 覆晶封裝基板的無料設計之高密度電路V及 第5A'5C圖為一系列剖面圖,用以比較本發明第二 施例之作為覆晶封裝基板的無銲墊設 第3A圖之-傳統的覆晶封裝基板。 -在度電路板與 符號說明 10 、 20〜1C晶片 30〜導電膠 100 '200 〜300 110 >210 \ 310 112、212 〜312 114、214、314 120 ^ 22 0 ^ 320 122 > 22 2 ^ 322 on τη 〇 ti 12〜覆晶凸塊 4〇〇〜覆晶封裝基板 41 〇〜外部線路 41 2〜銲墊 41 4〜導線 42 0〜防銲層 422〜防銲層開口Ptd Page 18 200410611 V. Description of Invention (15) The scope shall be determined by the scope of the attached patent application. ill ·! Page 19 0702-8994TWF (nl); 91P61; Dwwang.ptd 200410611 Illustration of the diagram is simple The first picture is a top view, which is based on one system. /. The density of circuit traces is limited. Figures 2A to 2C show a series of sections w. Using the example as a flip-chip package substrate, the method of the present invention is described. The circuit board and the 3A ~ 3B diagrams are shown in a series of cross-sectional views. Application: The solderless pads used as flip-chip package substrates are clear-a traditional flip-chip package substrate. The 4D and 4D drawings of the circuit board and the circuit board are a series of cross-sectional views. The solderless pad as the flip-chip package substrate of the second embodiment is shown in FIG. 3A-a conventional flip-chip package substrate. -Description of circuit board and symbols 10, 20 ~ 1C chip 30 ~ Conductive glue 100'200 ~ 300 110 > 210 \ 310 112, 212 ~ 312 114, 214, 314 120 ^ 22 0 ^ 320 122 > 22 2 ^ 322 on τη 〇ti 12 ~ Flip-chip bump 4〇〇 ~ Flip-chip package substrate 41 0 ~ External wiring 41 2 ~ Pad 41 4 ~ Wire 42 0 ~ Solder mask 422 ~ Seal mask opening

第20頁 200410611 圖式簡單說明 23 0、43 0〜導電凸塊 25 0、35 0、45 0〜電路板基材 4 4 0〜金屬層 4 3 2〜金屬層Page 20 200410611 Brief description of drawings 23 0, 43 0 to conductive bumps 25 0, 35 0, 45 0 to circuit board substrate 4 4 0 to metal layer 4 3 2 to metal layer

,¢702 -89941HVF( η 1); 91P61; Dwwang. p td 第21頁, ¢ 702 -89941HVF (η 1); 91P61; Dwwang. P td p.21

Claims (1)

200410611 六、申請專利範圍 1· 一種無銲墊設計之高密度電路板,至少包含: 一電路板基材,該電路板基材的一表面為—介電 ; 負層 一外部線路’形成於該介電質層上,該外部線路勺 複數個外部接點,且該些外部接點的寬度不大嗲 ^含 路的線寬; 、以Γ 4線 一防銲層,覆蓋該介電質層與該外部線路,該防銲芦 具有複數個防銲層開口,曝露該些外部接點,該些防銲^ 開口的直徑分別不小於所暴露的各該外部接點的&度;二 及 的該二鬼用::形成於該些防銲層開口範圍内 二卜邛接;上用以與一外部元件形成電性連結。 •如申請專利範圍第1項所述之無銲墊設計之高密户 ,其中該些防銲層開口的直徑分別為所暴露的“ 外部接點的寬度的1 · 2倍〜2倍。 该 3如巾請專利範圍第μ所述之無銲墊設計之高密户 Χϊΐΐ外部線路之間的間距不小於6〇 _。又 電路板13:範圍第1項所述之無銲墊設計之高密度 電路板,其中該電路板基材伤 ^ 層積電路基板、由該介電質;、一表面為該介電質層的 5.如申請㈣ 電路板,其中該外部元件項^返之無銲墊設計之高密度 R ^由4W 為+導體晶片。 6·如申请專利範圍第1項 一 電路板,其中該外部元件至、小/之無銲墊設計之尚密度 丨兀仵至少包含:半導體晶片、半導體 :-5702-8994TWF(nl);91P61;Dwwang.ptd 200410611 ~—"""«I 六、申請專利範圍 y封裝體、發光元件、連接器、被動元件、或另-電路 7. 如申請專利範圍第1項所述之鉦銲熱#叶之 電路板,其中該些導電凸 .、,、#墊6又计之间费度 8. 如申請專利範圍第i項的: 述成之方么\無電+解電錢。 電路板,…些導電凸塊的形成方式為電設二之高密度 9·如申請專利範圍第7項所述之無銲墊嗖^ $ 電路板,其中該些導電凸塊的材 1 网岔度 錄、錫鉛合金、或不含鉛的錫基合金。…、鍍上金的 10.如申請專利範圍第7項所述之無銲塾設 〜 電路板,其中該些導電凸塊的古 t 阿费度 。 的网度不兩於該防焊層的厚度 雷故如甘申請專利範圍第8項所述之無銲墊設計之高密产 =,其中該些導電凸塊的材質係擇自:銅、, 銅、鑛上不含錯的錫基合金的銅、*、鍍上錫錯: 錯的錫基合金。 基口金的金、錫錯合金'或不含 12.如申請專利範圍第8項所述之無銲墊設計之高密 電路板,其中該些導電凸塊的高度高於該防銲層的厚度20 // m 〜60 fim 〇 13· —種無銲塾設計之高密度電路板的製造方法,包 含: 提供一電路板基材,該電路板基材的一表面為一介電 質層,200410611 VI. Application Patent Scope 1. A high-density circuit board without pad design, including at least: a circuit board substrate, one surface of the circuit board substrate is dielectric; a negative layer and an external circuit are formed in the On the dielectric layer, the external circuit has a plurality of external contacts, and the widths of the external contacts are not large. 含 Including the line width of the circuit; Γ 4 wires and a solder mask covering the dielectric layer With the external circuit, the solder reed has a plurality of solder resist openings, exposing the external contacts, and the diameters of the solder resist ^ openings are not less than the & degrees of the exposed external contacts, respectively; and The two ghosts are: formed in the solder mask openings, and connected to an external component. • The high-density households without pad design as described in item 1 of the scope of the patent application, wherein the diameters of the openings of these solder mask layers are respectively 1 to 2 times to 2 times the width of the exposed "external contacts. The 3 For example, please contact the high-density customer with a padless design as described in the patent scope μ. The distance between external circuits is not less than 60 °. And the circuit board 13: a high-density circuit with a padless design as described in item 1 Board, wherein the substrate of the circuit board is damaged ^ a laminated circuit substrate, the dielectric; a surface of the dielectric layer 5. If an application is made ㈣ a circuit board, wherein the external component item is returned without a solder pad Designed high-density R ^ from 4W for + conductor wafer. 6 · For example, the scope of the patent application No. 1 a circuit board, where the external component to the small density of the padless design 丨 Vulture at least includes: semiconductor wafer 、 Semiconductor: -5702-8994TWF (nl); 91P61; Dwwang.ptd 200410611 ~-" " " `` I VI. Patent application scope: package, light-emitting component, connector, passive component, or other-circuit 7 . As described in item 1 of the patent application, the soldering heat # leaf of the circuit Board, in which the conductive bumps. ,,, # MAT6 are counted between the costs 8. As in the scope of the patent application item i: What is the formula \ no electricity + electricity money. Circuit boards, ... some conductive bumps The formation method of the block is the high density of the electric device 2. The solderless pad as described in item 7 of the scope of the patent application ^ ^ $ circuit board, in which the material of the conductive bumps 1 is recorded, tin-lead alloy, or Tin-based alloys that do not contain lead ...., gold-plated 10. The solderless installation as described in item 7 of the scope of the patent application ~ circuit board, where the conductive bumps are ancient. No less than the thickness of the solder mask layer. Therefore, the high-density output of the padless design as described in item 8 of the patent application scope =, where the material of the conductive bumps is selected from: copper, copper, copper Copper, *, tin-coated tin-free alloys with no wrong tin-based alloys: wrong tin-based alloys. Gold-based gold, tin-coated alloys' or no 12. No solder pads as described in item 8 of the scope of patent applications Designed high-density circuit board, where the height of the conductive bumps is higher than the thickness of the solder resist layer 20 // m ~ 60 fim 〇13 · —A solderless installation A method for producing high-density circuit board, comprises: providing a circuit board substrate, a surface of the circuit board substrate-dielectric layer, 第23頁 ,0702-8994TWF(η1);91P61;Dwwang.p td 200410611P. 23, 0702-8994TWF (η1); 91P61; Dwwang.p td 200410611 口範圍内的該些外部接點上 形 分別於該些防銲層開 成複數個導電凸塊。 14 ·如申請專利範圍第1 3項所述之無銲墊設計之高密 度電路板的製造方法,其中該些防銲層開口的直徑分別為 所暴露的各該外部接點的寬度的丨· 2倍〜2倍。 1 5 ·如申請專利範圍第丨3項所述之無銲墊設計之高密 度電路板的製造方法,其中該外部線路之間的間距為不小 於60 "m 〇 1 6 ·如申請專利範圍第1 3項所述之無銲墊設計之高密 度電路板,其中該電路板基材係择自一表面為該介電質層 的層積電路基板、由該介電質層所構成的電路板基材。 1 7 ·如申請專利範圍第1 3項所述之無銲墊設計之高密 度電路板的製造方法,其中該些導電凸塊的形成方式為無 電解電鍍。 1 8 ·如申請專利範圍第1 3項所述之無鲜塾設計之向密 度電路板的製造方法,其中該些導電凸塊的形成方式為電 鍍。The external contacts within the opening range are respectively formed with a plurality of conductive bumps on the solder resist layers. 14 · The method for manufacturing a high-density circuit board without a pad design as described in item 13 of the scope of the patent application, wherein the diameters of the solder resist openings are respectively the width of the exposed external contacts 丨 · 2 times to 2 times. 1 5 · The method for manufacturing a high-density circuit board without a pad design as described in item 丨 3 of the scope of patent application, wherein the distance between the external circuits is not less than 60 " m 〇1 6 · If the scope of patent application The high-density circuit board of the padless design according to item 13, wherein the substrate of the circuit board is selected from a laminated circuit substrate whose surface is the dielectric layer, and a circuit composed of the dielectric layer. Board substrate. 17 • The method for manufacturing a high-density circuit board with a padless design as described in item 13 of the scope of the patent application, wherein the conductive bumps are formed by electroless plating. 18 · The method for manufacturing a non-fresh design-oriented directional density circuit board as described in item 13 of the scope of patent application, wherein the conductive bumps are formed by electroplating. .〇7〇2-8994TWF(nl);91P61 ;D^ang.Ptd 200410611.〇07〇2-8994TWF (nl); 91P61; D ^ ang.Ptd 200410611 19·如申請專利範圍第17項所述之無銲墊設計之高密 度電路板的製造方法,其中該些導電凸塊的材質係擇自: 銅、链上金的鎳、錫鉛合金、或不含鉛的錫基合金。 2 0 ·如申請專利範圍第1 7項所述之無銲墊設計之高密 度電路板的製造方法,其中該/該些導電凸塊的高度不高 於遠防鮮層的厚度。 ° 2 1 ·如申請專利範圍第1 8項所述之無銲墊設計之高密 度電路板的製造方法,其中該些導電凸塊的形成方式更' 含: 匕 形成一導電的金屬層,覆蓋在該防銲層、該些防銲層 開口和該些外部接點上; ’ 9 形成一阻劑層,覆蓋在該導電的金屬層上; 圖形化該阻劑層,曝露出覆蓋在該些防銲層開口和兮 些外部接點上的該導電的金屬層; 將該電路板基材置於一電鍍液中,並使該導電的金屬 層通電,將該些導電凸塊鍍在該些外部接點上;以及 去除覆蓋在該防銲層上的該阻劑層以及該導電的 層。 金屬 22 ·如申請專利範圍第1 8項所述之無銲墊設計之高密 度電路板的製造方法,其中該些導電凸塊的材質係擇自进 銅、鍍上錫鉛合金的銅、鍍上不含鉛的錫基合金的鋼、· 、鑛上錫錯合金的金、鍍上不含錯的錫基合金的合 μ金 人 巫、踢金l 合金、或不含鉛的錫基合金。 2 3 ·如申請專利範圍第1 8項所述之無銲墊設計夕^19. The method of manufacturing a high-density circuit board without a pad design as described in item 17 of the scope of the patent application, wherein the material of the conductive bumps is selected from: copper, gold-on-chain nickel, tin-lead alloy, or Lead-free tin-based alloy. 20 • The method for manufacturing a high-density circuit board with a padless design as described in item 17 of the scope of the patent application, wherein the height of the conductive bumps is not higher than the thickness of the anti-frying layer. ° 2 1 · The method for manufacturing a high-density circuit board with a padless design as described in item 18 of the scope of the patent application, wherein the conductive bumps are formed in a more 'inclusive' manner: a conductive metal layer is formed to cover On the solder resist layer, the solder resist openings and the external contacts; '9 forming a resist layer covering the conductive metal layer; patterning the resist layer, exposing and covering the resist layer The solder resist opening and the conductive metal layer on the external contacts; the substrate of the circuit board is placed in a plating solution, the conductive metal layer is energized, and the conductive bumps are plated on the conductive bumps. External contacts; and removing the resist layer and the conductive layer overlying the solder mask. Metal 22 · The method for manufacturing a high-density circuit board without a pad design as described in item 18 of the scope of the patent application, wherein the materials of the conductive bumps are selected from copper, copper-plated tin-lead alloy, and copper-plated Lead-free tin-based alloy steel, gold, tin-based alloy gold, μ-plated tin-based alloy μμ witch, gold kick alloy, or lead-free tin-based alloy . 2 3 · Padless design as described in item 18 of the scope of patent application ^ 200410611 _iimi麵 1 - 六、申請專利範圍 3造方法…該些導電凸塊的高度高於該防 曰 J 7手度_~60 // m。 报種無銲塾設計之高密度電路板,適用於與一已 ^成^腳或凸塊的外部元件形成電性連結,至少包含: 電路板基材,該電路板基材的一表面為一介電質層 複數=料路,形成於料電㈣上,料喊路包含 稷個外°卩接點,且該些外部接點的寬度不大於該外部線 路的線寬; 、防鲜層’覆蓋該介電質層與該外部線路,該防銲層 具有複數個防銲層開口,曝露該些外部接點,該些防銲層 開口的直控分別不小於所暴露的各該外部接點的寬度;以 及 複,個金屬凸塊,以無電解電鍍分別形成於該些防銲 層^ 口範圍内的該些外部接點上,且該些金屬凸塊的高度 不高於該防銲層的厚度。 2 5 ·如申請專利範圍第2 4項所述之無銲墊設計之高密 度電路板’其中該些防銲層開口的直徑分別為所暴露的各 該外部接點的寬度的1 · 2倍〜2倍。 26·如申請專利範圍第24項所述之無銲墊設計之高密 度電路板,其中該外部線路之間的間距不小於6 〇 v m。 2 7 ·如申請專利範圍第2 4項所述之無銲墊設計之高密 度電路板’其中該電路板基材係擇自一表面為該介電質層 的層積電路基板、由該介電質層所構成的電路板基材。 第26頁 及7〇2 - 8994TWF (η 1); 91Ρ61; Dwwang. p t d 200410611 六、申請專利範圍 2 8 ·如申凊專利範圍第2 4項所述之無鮮塾設計之高密 度電路板’其中該外部元件至少包含··半導體晶片、半導 體晶片封裝體、發光元件、連接器、被動元件、或另一 路板。 2 9 ·如申睛專利範圍第2 4項所述之無鮮塾設計之高密 度電路板,其中該些金屬凸塊的材質係擇自··銅、锻上金 的鎳、錫鉛合金、或不含鉛的錫基合金。 30· —種無銲墊設計之高密度電路板,適用於與一無 引腳或凸塊的外部元件形成電性連結,至少包含·· ’、、 一電路板基材,該電路板基材的一表面為一介電質層 複數路,形成於該介電質層上— 複數個外接點,且該此外 路的線寬; /二外。卩接點的寬度不大於該外部線 一防麵·層’覆蓋該介電質声血 且右游叙徊IHr I日、曰一該外4線路’該防銲声 具有複數個防銲層開口,曝露該些 兮此& Γ層 開口的直徑分別不小於所暴 :j點,該坠防銲層 及 7恭路的各該外部接點的寬度;以 複數個金屬凸塊,以電鍍分 範圍内的該些外部接點上,且誃此^成於該些防銲層開口 防銲層的厚度20 #^60 。〜些金屬凸塊的高度高於該 3 1 ·如申請專利範圍第3 〇項 度電路板,其中該些防銲層開口 之-無銲墊設計之高密 該外部接點的寬度的丨· 2倍〜2倍。、直徑分別為所暴露的各200410611 _iimi surface 1-VI. Patent application scope 3 Manufacturing methods ... The height of the conductive bumps is higher than the anti-J 7 hand _ ~ 60 // m. The reported high-density circuit board without solder pads is suitable for forming an electrical connection with an external component that has been formed into a foot or a bump, and includes at least: a circuit board substrate, one surface of the circuit board substrate is a The multiple dielectric layer = material path is formed on the material circuit. The material circuit includes an external contact, and the width of the external contacts is not greater than the line width of the external circuit. Covering the dielectric layer and the external circuit, the solder mask has a plurality of solder mask openings, exposing the external contacts, and the direct control of the solder mask openings is not less than the exposed external contacts, respectively. The width of the metal bumps; and a plurality of metal bumps formed by electroless plating on the external contacts within the solder mask layer, respectively, and the height of the metal bumps is not higher than the solder mask layer. thickness of. 2 5 · The high-density circuit board with a padless design as described in item 24 of the scope of the patent application, wherein the diameters of the openings of the solder resist layers are each 1 · 2 times the width of the exposed external contacts. ~2 times. 26. The high-density circuit board with a padless design as described in item 24 of the scope of the patent application, wherein the distance between the external circuits is not less than 60 v m. 2 7 · The high-density circuit board with a padless design as described in item 24 of the scope of the patent application, wherein the circuit board substrate is selected from a laminated circuit substrate with a dielectric layer on one surface, A circuit board substrate composed of a dielectric layer. Page 26 and 7〇2-8994TWF (η 1); 91P61; Dwwang. Ptd 200410611 VI. Patent Application Scope 2 8 · High-density circuit board with no fresh design as described in item 24 of the patent application scope ' The external component includes at least a semiconductor wafer, a semiconductor wafer package, a light emitting device, a connector, a passive device, or another circuit board. 2 9 · The high-density circuit-free design of the high-density circuit board as described in item 24 of the patent application, where the material of the metal bumps is selected from the group consisting of: copper, gold-plated nickel, tin-lead alloy, Or lead-free tin-based alloys. 30 · —A high-density circuit board without a pad design, suitable for forming an electrical connection with an external component without pins or bumps, including at least a circuit board substrate, the circuit board substrate One surface of is a plurality of dielectric layers, formed on the dielectric layer-a plurality of external points, and the line width of the external path;宽度 The width of the contact is not greater than the outer surface of a shield. The layer 'covers the dielectric sound blood and travels to the right IHr I day, said one outer 4 lines' The solder sound has a plurality of solder mask openings The diameters of the openings of the & Γ layer are not less than the exposed diameters: point j, the width of the external solder joint and the external contact points of 7 Gonglu; with a plurality of metal bumps, the points are separated by electroplating. The external contacts within the range are formed by the thickness of the solder mask opening solder mask 20 # ^ 60. ~ The height of some metal bumps is higher than the 3 1 · For example, the circuit board of the 30th degree of the scope of patent application, wherein the openings of the solder resist layer-the design of the pad-free high density of the width of the external contact 丨 · 2 Times to 2 times. , Diameters are each of the exposed 200410611 六、申請專利範圍 ---- 32·如申請專利範園第3〇項所述之無銲墊設計之高密 度電路板,其中該外部線路之間的間距不小於6 〇 // m。 33·如申請專利範圍第3〇項所述之無銲墊設計之高密 度電路板,其中該電路板基材係擇自一表面為該介電質層 的層積電路基板、由該介電質層戶斤構成的電路板基材。 34 ·如申請專利範圍第3 〇項所述之無銲墊設計之高密 度電路板,其中該外部元件至少包含:半導體晶片、半導 體晶片封裝體、發光元件、連接器、或被動元件。 35·如申請專利範圍第3Q項所述之無銲塾設計之高密 度電路板,其中該些導電凸塊的材質係擇自:銅、鍍上錫 船合金的銅、鐘上不含鉛的錫基合金的銅、金、鑛上錫錯 合金的金、鍍上不含鉛的錫基合金的金、錫鉛合金、或不 含錯的錫基合金。200410611 VI. Scope of Patent Application ---- 32. The high-density circuit board with padless design as described in item 30 of the patent application park, where the distance between the external lines is not less than 6 0 // m. 33. The high-density circuit board with a padless design as described in item 30 of the scope of the patent application, wherein the substrate of the circuit board is selected from a laminated circuit substrate with a dielectric layer on one surface, Circuit board substrate consisting of multiple layers. 34. A high-density circuit board with a padless design as described in item 30 of the scope of patent application, wherein the external components include at least: a semiconductor wafer, a semiconductor chip package, a light-emitting component, a connector, or a passive component. 35. The high-density circuit board with solderless design as described in item 3Q of the scope of patent application, wherein the material of the conductive bumps is selected from: copper, copper plated with tin boat alloy, lead-free on the clock Copper, gold of tin-based alloys, gold of tin-based alloys, gold-plated tin-based alloys without lead, tin-lead alloys, or tin-based alloys without faults. _.07p2-8994TWF(nl) ;91P61 ;Dwwang. ptd 第28頁_.07p2-8994TWF (nl); 91P61; Dwwang. Ptd page 28
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Publication number Priority date Publication date Assignee Title
TWI711347B (en) * 2019-12-31 2020-11-21 頎邦科技股份有限公司 Flip chip interconnection and circuit substrate thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TWI711347B (en) * 2019-12-31 2020-11-21 頎邦科技股份有限公司 Flip chip interconnection and circuit substrate thereof
US11581283B2 (en) 2019-12-31 2023-02-14 Chipbond Technology Corporation Flip chip package and circuit board thereof

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