TWI687985B - 分割裝置及晶圓之分割方法 - Google Patents

分割裝置及晶圓之分割方法 Download PDF

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Publication number
TWI687985B
TWI687985B TW105125171A TW105125171A TWI687985B TW I687985 B TWI687985 B TW I687985B TW 105125171 A TW105125171 A TW 105125171A TW 105125171 A TW105125171 A TW 105125171A TW I687985 B TWI687985 B TW I687985B
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TW
Taiwan
Prior art keywords
wafer
tape
ring
ring frame
dividing
Prior art date
Application number
TW105125171A
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English (en)
Chinese (zh)
Other versions
TW201719735A (zh
Inventor
植木篤
Original Assignee
日商迪思科股份有限公司
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Application filed by 日商迪思科股份有限公司 filed Critical 日商迪思科股份有限公司
Publication of TW201719735A publication Critical patent/TW201719735A/zh
Application granted granted Critical
Publication of TWI687985B publication Critical patent/TWI687985B/zh

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67092—Apparatus for mechanical treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/68—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for positioning, orientation or alignment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2221/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof covered by H01L21/00
    • H01L2221/67—Apparatus for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components; Apparatus not specifically provided for elsewhere

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Dicing (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Laser Beam Processing (AREA)
TW105125171A 2015-09-18 2016-08-08 分割裝置及晶圓之分割方法 TWI687985B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
JP2015-185495 2015-09-18
JP2015185495A JP6570942B2 (ja) 2015-09-18 2015-09-18 分割装置及びウエーハの分割方法

Publications (2)

Publication Number Publication Date
TW201719735A TW201719735A (zh) 2017-06-01
TWI687985B true TWI687985B (zh) 2020-03-11

Family

ID=58391743

Family Applications (1)

Application Number Title Priority Date Filing Date
TW105125171A TWI687985B (zh) 2015-09-18 2016-08-08 分割裝置及晶圓之分割方法

Country Status (3)

Country Link
JP (1) JP6570942B2 (ja)
CN (1) CN107039261B (ja)
TW (1) TWI687985B (ja)

Families Citing this family (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6934327B2 (ja) * 2017-06-07 2021-09-15 株式会社ディスコ ウエーハの分割方法及び分割装置
JP6941022B2 (ja) * 2017-10-06 2021-09-29 株式会社ディスコ 拡張方法及び拡張装置
JP7109916B2 (ja) * 2017-12-27 2022-08-01 株式会社ディスコ 分割装置
JP7115862B2 (ja) * 2018-02-13 2022-08-09 株式会社ディスコ 分割装置及び分割方法
JP7112205B2 (ja) * 2018-02-13 2022-08-03 株式会社ディスコ 分割装置
KR20200132857A (ko) * 2018-03-30 2020-11-25 도쿄엘렉트론가부시키가이샤 레이저 가공 장치 및 레이저 가공 방법
JP7313219B2 (ja) * 2019-07-22 2023-07-24 株式会社ディスコ エキスパンド方法及びエキスパンド装置
TW202119521A (zh) * 2019-11-12 2021-05-16 力成科技股份有限公司 晶圓擴片裝置
CN113510610A (zh) * 2021-07-30 2021-10-19 深圳市诺泰芯装备有限公司 一种晶圆盘自动上料及扩膜设备

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100920A (ja) * 2009-11-09 2011-05-19 Disco Abrasive Syst Ltd チップ間隔拡張方法
JP2012186445A (ja) * 2011-02-16 2012-09-27 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法
TW201302969A (zh) * 2011-07-01 2013-01-16 Furukawa Electric Co Ltd 接著膜、切割晶片接合膜及使用其之半導體加工方法
JP2014232782A (ja) * 2013-05-28 2014-12-11 株式会社ディスコ チップ間隔維持装置
TW201446933A (zh) * 2013-05-29 2014-12-16 Mitsui Chemicals Tohcello Inc 半導體晶圓保護用膜及半導體裝置的製造方法

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP5313036B2 (ja) * 2009-05-11 2013-10-09 株式会社ディスコ 粘着テープの拡張方法
CN102646584B (zh) * 2011-02-16 2014-06-25 株式会社东京精密 工件分割装置及工件分割方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2011100920A (ja) * 2009-11-09 2011-05-19 Disco Abrasive Syst Ltd チップ間隔拡張方法
JP2012186445A (ja) * 2011-02-16 2012-09-27 Tokyo Seimitsu Co Ltd ワーク分割装置及びワーク分割方法
TW201302969A (zh) * 2011-07-01 2013-01-16 Furukawa Electric Co Ltd 接著膜、切割晶片接合膜及使用其之半導體加工方法
JP2014232782A (ja) * 2013-05-28 2014-12-11 株式会社ディスコ チップ間隔維持装置
TW201446933A (zh) * 2013-05-29 2014-12-16 Mitsui Chemicals Tohcello Inc 半導體晶圓保護用膜及半導體裝置的製造方法

Also Published As

Publication number Publication date
CN107039261B (zh) 2021-08-17
JP6570942B2 (ja) 2019-09-04
JP2017059765A (ja) 2017-03-23
TW201719735A (zh) 2017-06-01
CN107039261A (zh) 2017-08-11

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