TWI684664B - 基板處理裝置，基板處理方法及基板處理程式 - Google Patents

基板處理裝置，基板處理方法及基板處理程式 Download PDF

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Publication number
TWI684664B
TWI684664B TW104115712A TW104115712A TWI684664B TW I684664 B TWI684664 B TW I684664B TW 104115712 A TW104115712 A TW 104115712A TW 104115712 A TW104115712 A TW 104115712A TW I684664 B TWI684664 B TW I684664B
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TW
Taiwan
Prior art keywords
recipe
program
processing
substrate processing
substrate
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TW104115712A
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English (en)
Chinese (zh)
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TW201610210A (zh
Inventor
佐佐木滿
三浦達也
大野利弘
小野和宗
遠藤翔子
北原龍
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日商東京威力科創股份有限公司
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
TW104115712A 2014-05-20 2015-05-18 基板處理裝置，基板處理方法及基板處理程式 TWI684664B (zh)

Applications Claiming Priority (4)

Application Number Priority Date Filing Date Title
JP2014-104206 2014-05-20
JP2014104206 2014-05-20
JP2015-087044 2015-04-21
JP2015087044A JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム

Publications (2)

Publication Number Publication Date
TW201610210A TW201610210A (zh) 2016-03-16
TWI684664B true TWI684664B (zh) 2020-02-11

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Family Applications (1)

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TW104115712A TWI684664B (zh) 2014-05-20 2015-05-18 基板處理裝置，基板處理方法及基板處理程式

Country Status (6)

Country Link
US (1) US10128121B2 (enExample)
JP (1) JP6501601B2 (enExample)
KR (1) KR102364319B1 (enExample)
CN (1) CN106233427B (enExample)
TW (1) TWI684664B (enExample)
WO (1) WO2015178348A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517845B2 (ja) * 2017-01-17 2019-05-22 株式会社荏原製作所 スケジューラ、基板処理装置、及び基板搬送方法
JP6586443B2 (ja) * 2017-10-10 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法
JP7261786B2 (ja) * 2018-02-16 2023-04-20 東京エレクトロン株式会社 加工装置
JP7226949B2 (ja) * 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
WO2021240572A1 (ja) 2020-05-25 2021-12-02 株式会社日立ハイテク 半導体装置製造システムおよび半導体装置製造方法
WO2023181265A1 (ja) 2022-03-24 2023-09-28 株式会社日立ハイテク 装置診断システム、装置診断装置、半導体装置製造システムおよび装置診断方法
JPWO2024185561A1 (enExample) * 2023-03-06 2024-09-12

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080188970A1 (en) * 2006-09-28 2008-08-07 Chung-Ho Huang Methods and Arrangement for Creating Recipes Using Best-Known Methods
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982589A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置の処理システム
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
JP5128080B2 (ja) 2006-03-29 2013-01-23 東京エレクトロン株式会社 基板処理装置の制御装置およびその制御方法
JP5028193B2 (ja) * 2007-09-05 2012-09-19 株式会社日立ハイテクノロジーズ 半導体製造装置における被処理体の搬送方法

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20080188970A1 (en) * 2006-09-28 2008-08-07 Chung-Ho Huang Methods and Arrangement for Creating Recipes Using Best-Known Methods
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム

Also Published As

Publication number Publication date
JP6501601B2 (ja) 2019-04-17
US20170040177A1 (en) 2017-02-09
CN106233427A (zh) 2016-12-14
KR102364319B1 (ko) 2022-02-16
JP2016001726A (ja) 2016-01-07
WO2015178348A1 (ja) 2015-11-26
TW201610210A (zh) 2016-03-16
KR20170004951A (ko) 2017-01-11
CN106233427B (zh) 2019-07-09
US10128121B2 (en) 2018-11-13

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