TWI684664B - 基板處理裝置,基板處理方法及基板處理程式 - Google Patents
基板處理裝置,基板處理方法及基板處理程式 Download PDFInfo
- Publication number
- TWI684664B TWI684664B TW104115712A TW104115712A TWI684664B TW I684664 B TWI684664 B TW I684664B TW 104115712 A TW104115712 A TW 104115712A TW 104115712 A TW104115712 A TW 104115712A TW I684664 B TWI684664 B TW I684664B
- Authority
- TW
- Taiwan
- Prior art keywords
- recipe
- program
- processing
- substrate processing
- substrate
- Prior art date
Links
Images
Classifications
-
- H10P50/242—
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/3065—Plasma etching; Reactive-ion etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32926—Software, data control or modelling
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32917—Plasma diagnostics
- H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
-
- H10P14/6502—
-
- H10P14/6516—
-
- H10P72/0468—
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Chemical & Material Sciences (AREA)
- Analytical Chemistry (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2014104206 | 2014-05-20 | ||
| JP2014-104206 | 2014-05-20 | ||
| JP2015087044A JP6501601B2 (ja) | 2014-05-20 | 2015-04-21 | 基板処理装置、基板処理方法及び基板処理プログラム |
| JP2015-087044 | 2015-04-21 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201610210A TW201610210A (zh) | 2016-03-16 |
| TWI684664B true TWI684664B (zh) | 2020-02-11 |
Family
ID=54554018
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104115712A TWI684664B (zh) | 2014-05-20 | 2015-05-18 | 基板處理裝置,基板處理方法及基板處理程式 |
Country Status (6)
| Country | Link |
|---|---|
| US (1) | US10128121B2 (enExample) |
| JP (1) | JP6501601B2 (enExample) |
| KR (1) | KR102364319B1 (enExample) |
| CN (1) | CN106233427B (enExample) |
| TW (1) | TWI684664B (enExample) |
| WO (1) | WO2015178348A1 (enExample) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6517845B2 (ja) * | 2017-01-17 | 2019-05-22 | 株式会社荏原製作所 | スケジューラ、基板処理装置、及び基板搬送方法 |
| JP6586443B2 (ja) * | 2017-10-10 | 2019-10-02 | 東京エレクトロン株式会社 | 被処理体を処理する方法 |
| WO2019159735A1 (ja) * | 2018-02-16 | 2019-08-22 | 東京エレクトロン株式会社 | 加工装置 |
| JP7226949B2 (ja) | 2018-09-20 | 2023-02-21 | 株式会社Screenホールディングス | 基板処理装置および基板処理システム |
| WO2021240572A1 (ja) * | 2020-05-25 | 2021-12-02 | 株式会社日立ハイテク | 半導体装置製造システムおよび半導体装置製造方法 |
| CN120883319A (zh) * | 2023-03-06 | 2025-10-31 | 东京毅力科创株式会社 | 计算机程序、信息处理方法以及信息处理装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080188970A1 (en) * | 2006-09-28 | 2008-08-07 | Chung-Ho Huang | Methods and Arrangement for Creating Recipes Using Best-Known Methods |
| JP2009054674A (ja) * | 2007-08-24 | 2009-03-12 | Tokyo Electron Ltd | 製造装置、操作ログ蓄積方法、及びプログラム |
Family Cites Families (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0982589A (ja) * | 1995-09-18 | 1997-03-28 | Kokusai Electric Co Ltd | 半導体製造装置の処理システム |
| JP3708031B2 (ja) * | 2001-06-29 | 2005-10-19 | 株式会社日立製作所 | プラズマ処理装置および処理方法 |
| US7292906B2 (en) * | 2004-07-14 | 2007-11-06 | Tokyo Electron Limited | Formula-based run-to-run control |
| JP5128080B2 (ja) | 2006-03-29 | 2013-01-23 | 東京エレクトロン株式会社 | 基板処理装置の制御装置およびその制御方法 |
| JP5028193B2 (ja) * | 2007-09-05 | 2012-09-19 | 株式会社日立ハイテクノロジーズ | 半導体製造装置における被処理体の搬送方法 |
-
2015
- 2015-04-21 JP JP2015087044A patent/JP6501601B2/ja active Active
- 2015-05-18 CN CN201580020853.4A patent/CN106233427B/zh active Active
- 2015-05-18 WO PCT/JP2015/064214 patent/WO2015178348A1/ja not_active Ceased
- 2015-05-18 US US15/304,570 patent/US10128121B2/en active Active
- 2015-05-18 TW TW104115712A patent/TWI684664B/zh active
- 2015-05-18 KR KR1020167020130A patent/KR102364319B1/ko active Active
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20080188970A1 (en) * | 2006-09-28 | 2008-08-07 | Chung-Ho Huang | Methods and Arrangement for Creating Recipes Using Best-Known Methods |
| JP2009054674A (ja) * | 2007-08-24 | 2009-03-12 | Tokyo Electron Ltd | 製造装置、操作ログ蓄積方法、及びプログラム |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2015178348A1 (ja) | 2015-11-26 |
| KR102364319B1 (ko) | 2022-02-16 |
| CN106233427A (zh) | 2016-12-14 |
| KR20170004951A (ko) | 2017-01-11 |
| CN106233427B (zh) | 2019-07-09 |
| JP2016001726A (ja) | 2016-01-07 |
| JP6501601B2 (ja) | 2019-04-17 |
| US20170040177A1 (en) | 2017-02-09 |
| TW201610210A (zh) | 2016-03-16 |
| US10128121B2 (en) | 2018-11-13 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TWI684664B (zh) | 基板處理裝置,基板處理方法及基板處理程式 | |
| CN106057616B (zh) | 用于斜面聚合物减少的边缘环 | |
| US20080066868A1 (en) | Focus ring and plasma processing apparatus | |
| TWI661463B (zh) | 加熱器供電機構及平台溫度控制方法 | |
| CN112309819B (zh) | 边缘环、载置台、基片处理装置和基片处理方法 | |
| US10553409B2 (en) | Method of cleaning plasma processing apparatus | |
| WO2015178222A1 (ja) | ヒータ給電機構 | |
| CN102208322A (zh) | 等离子体处理装置和半导体装置的制造方法 | |
| US9253862B2 (en) | Plasma processing method and plasma processing apparatus | |
| TWI829915B (zh) | 除電方法、基板處理方法及基板處理裝置 | |
| TW201724162A (zh) | 被處理體之處理方法 | |
| JP2011530170A (ja) | チャンバのプラズマ洗浄プロセス方法 | |
| US10991551B2 (en) | Cleaning method and plasma processing apparatus | |
| US8328981B2 (en) | Method for heating a focus ring in a plasma apparatus by high frequency power while no plasma being generated | |
| TWI884195B (zh) | 載置台、及基板處理裝置 | |
| JP7503951B2 (ja) | エッチング処理装置、石英部材及びプラズマ処理方法 | |
| US9922841B2 (en) | Plasma processing method | |
| US7569478B2 (en) | Method and apparatus for manufacturing semiconductor device, control program and computer storage medium | |
| JP2006332336A (ja) | フォトマスク用プラズマエッチング装置およびエッチング方法 | |
| TW202330120A (zh) | 清潔方法、基板之處理方法及電漿處理裝置 | |
| JP2020126899A (ja) | 基板処理方法及び基板処理装置 | |
| CN113966546B (zh) | 蚀刻方法和蚀刻装置 | |
| EP4521448A1 (en) | Plasma processing method and plasma processing device | |
| JP5618884B2 (ja) | 基板のプラズマ処理方法 | |
| KR20240065117A (ko) | 플라스마 처리 장치 및 플라스마 처리 방법 |