KR102364319B1 - 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램 - Google Patents

기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램 Download PDF

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KR102364319B1
KR102364319B1 KR1020167020130A KR20167020130A KR102364319B1 KR 102364319 B1 KR102364319 B1 KR 102364319B1 KR 1020167020130 A KR1020167020130 A KR 1020167020130A KR 20167020130 A KR20167020130 A KR 20167020130A KR 102364319 B1 KR102364319 B1 KR 102364319B1
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recipe
processing
substrate
partial
recipes
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KR20170004951A (ko
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미츠루 사사키
다츠야 미우라
도시히로 오노
가즈무네 오노
쇼코 엔도
류 기타하라
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도쿄엘렉트론가부시키가이샤
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    • H01L21/3065—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H01L21/02299—
    • H01L21/02318—
    • H01L21/67207—
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020167020130A 2014-05-20 2015-05-18 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램 Active KR102364319B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2014-104206 2014-05-20
JP2014104206 2014-05-20
JP2015087044A JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム
JPJP-P-2015-087044 2015-04-21
PCT/JP2015/064214 WO2015178348A1 (ja) 2014-05-20 2015-05-18 基板処理装置、基板処理方法及び基板処理プログラム

Publications (2)

Publication Number Publication Date
KR20170004951A KR20170004951A (ko) 2017-01-11
KR102364319B1 true KR102364319B1 (ko) 2022-02-16

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KR1020167020130A Active KR102364319B1 (ko) 2014-05-20 2015-05-18 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램

Country Status (6)

Country Link
US (1) US10128121B2 (enExample)
JP (1) JP6501601B2 (enExample)
KR (1) KR102364319B1 (enExample)
CN (1) CN106233427B (enExample)
TW (1) TWI684664B (enExample)
WO (1) WO2015178348A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517845B2 (ja) * 2017-01-17 2019-05-22 株式会社荏原製作所 スケジューラ、基板処理装置、及び基板搬送方法
JP6586443B2 (ja) * 2017-10-10 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法
JP7261786B2 (ja) * 2018-02-16 2023-04-20 東京エレクトロン株式会社 加工装置
JP7226949B2 (ja) * 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
WO2021240572A1 (ja) 2020-05-25 2021-12-02 株式会社日立ハイテク 半導体装置製造システムおよび半導体装置製造方法
WO2023181265A1 (ja) 2022-03-24 2023-09-28 株式会社日立ハイテク 装置診断システム、装置診断装置、半導体装置製造システムおよび装置診断方法
JPWO2024185561A1 (enExample) * 2023-03-06 2024-09-12

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム
JP2010505209A (ja) 2006-09-28 2010-02-18 ラム リサーチ コーポレーション 汎用方法を利用したレシピ作成方法および装置
US20110194924A1 (en) 2007-09-05 2011-08-11 Hiroyuki Kobayashi Method for transporting object to be processed in semiconductor manufacturing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982589A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置の処理システム
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
JP5128080B2 (ja) 2006-03-29 2013-01-23 東京エレクトロン株式会社 基板処理装置の制御装置およびその制御方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010505209A (ja) 2006-09-28 2010-02-18 ラム リサーチ コーポレーション 汎用方法を利用したレシピ作成方法および装置
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム
US20110194924A1 (en) 2007-09-05 2011-08-11 Hiroyuki Kobayashi Method for transporting object to be processed in semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
JP6501601B2 (ja) 2019-04-17
US20170040177A1 (en) 2017-02-09
CN106233427A (zh) 2016-12-14
JP2016001726A (ja) 2016-01-07
WO2015178348A1 (ja) 2015-11-26
TWI684664B (zh) 2020-02-11
TW201610210A (zh) 2016-03-16
KR20170004951A (ko) 2017-01-11
CN106233427B (zh) 2019-07-09
US10128121B2 (en) 2018-11-13

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