KR102364319B1 - 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램 - Google Patents

기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램 Download PDF

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KR102364319B1
KR102364319B1 KR1020167020130A KR20167020130A KR102364319B1 KR 102364319 B1 KR102364319 B1 KR 102364319B1 KR 1020167020130 A KR1020167020130 A KR 1020167020130A KR 20167020130 A KR20167020130 A KR 20167020130A KR 102364319 B1 KR102364319 B1 KR 102364319B1
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recipe
processing
substrate
partial
recipes
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KR20170004951A (ko
Inventor
미츠루 사사키
다츠야 미우라
도시히로 오노
가즈무네 오노
쇼코 엔도
류 기타하라
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도쿄엘렉트론가부시키가이샤
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
KR1020167020130A 2014-05-20 2015-05-18 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램 Active KR102364319B1 (ko)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JPJP-P-2014-104206 2014-05-20
JP2014104206 2014-05-20
JPJP-P-2015-087044 2015-04-21
JP2015087044A JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム
PCT/JP2015/064214 WO2015178348A1 (ja) 2014-05-20 2015-05-18 基板処理装置、基板処理方法及び基板処理プログラム

Publications (2)

Publication Number Publication Date
KR20170004951A KR20170004951A (ko) 2017-01-11
KR102364319B1 true KR102364319B1 (ko) 2022-02-16

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KR1020167020130A Active KR102364319B1 (ko) 2014-05-20 2015-05-18 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램

Country Status (6)

Country Link
US (1) US10128121B2 (enExample)
JP (1) JP6501601B2 (enExample)
KR (1) KR102364319B1 (enExample)
CN (1) CN106233427B (enExample)
TW (1) TWI684664B (enExample)
WO (1) WO2015178348A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517845B2 (ja) * 2017-01-17 2019-05-22 株式会社荏原製作所 スケジューラ、基板処理装置、及び基板搬送方法
JP6586443B2 (ja) * 2017-10-10 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法
JP7261786B2 (ja) * 2018-02-16 2023-04-20 東京エレクトロン株式会社 加工装置
JP7226949B2 (ja) * 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
WO2021240572A1 (ja) * 2020-05-25 2021-12-02 株式会社日立ハイテク 半導体装置製造システムおよび半導体装置製造方法
JPWO2024185561A1 (enExample) * 2023-03-06 2024-09-12

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム
JP2010505209A (ja) 2006-09-28 2010-02-18 ラム リサーチ コーポレーション 汎用方法を利用したレシピ作成方法および装置
US20110194924A1 (en) 2007-09-05 2011-08-11 Hiroyuki Kobayashi Method for transporting object to be processed in semiconductor manufacturing apparatus

Family Cites Families (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982589A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置の処理システム
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
JP5128080B2 (ja) 2006-03-29 2013-01-23 東京エレクトロン株式会社 基板処理装置の制御装置およびその制御方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2010505209A (ja) 2006-09-28 2010-02-18 ラム リサーチ コーポレーション 汎用方法を利用したレシピ作成方法および装置
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム
US20110194924A1 (en) 2007-09-05 2011-08-11 Hiroyuki Kobayashi Method for transporting object to be processed in semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
JP6501601B2 (ja) 2019-04-17
US10128121B2 (en) 2018-11-13
WO2015178348A1 (ja) 2015-11-26
TW201610210A (zh) 2016-03-16
CN106233427B (zh) 2019-07-09
TWI684664B (zh) 2020-02-11
JP2016001726A (ja) 2016-01-07
CN106233427A (zh) 2016-12-14
KR20170004951A (ko) 2017-01-11
US20170040177A1 (en) 2017-02-09

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