JP6501601B2 - 基板処理装置、基板処理方法及び基板処理プログラム - Google Patents

基板処理装置、基板処理方法及び基板処理プログラム Download PDF

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Publication number
JP6501601B2
JP6501601B2 JP2015087044A JP2015087044A JP6501601B2 JP 6501601 B2 JP6501601 B2 JP 6501601B2 JP 2015087044 A JP2015087044 A JP 2015087044A JP 2015087044 A JP2015087044 A JP 2015087044A JP 6501601 B2 JP6501601 B2 JP 6501601B2
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Japan
Prior art keywords
recipe
processing
substrate
partial
processing procedure
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JP2015087044A
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English (en)
Japanese (ja)
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JP2016001726A5 (enExample
JP2016001726A (ja
Inventor
佐々木　満
満 佐々木
達也 三浦
達也 三浦
利弘 大野
利弘 大野
和宗 小野
和宗 小野
翔子 遠藤
翔子 遠藤
竜 北原
竜 北原
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Priority to JP2015087044A priority Critical patent/JP6501601B2/ja
Application filed by Tokyo Electron Ltd filed Critical Tokyo Electron Ltd
Priority to TW104115712A priority patent/TWI684664B/zh
Priority to US15/304,570 priority patent/US10128121B2/en
Priority to PCT/JP2015/064214 priority patent/WO2015178348A1/ja
Priority to KR1020167020130A priority patent/KR102364319B1/ko
Priority to CN201580020853.4A priority patent/CN106233427B/zh
Publication of JP2016001726A publication Critical patent/JP2016001726A/ja
Publication of JP2016001726A5 publication Critical patent/JP2016001726A5/ja
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    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P50/00—Etching of wafers, substrates or parts of devices
    • H10P50/20—Dry etching; Plasma etching; Reactive-ion etching
    • H10P50/24—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials
    • H10P50/242—Dry etching; Plasma etching; Reactive-ion etching of semiconductor materials of Group IV materials
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6502—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed before formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00—Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60—Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/65—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials
    • H10P14/6516—Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by treatments performed before or after the formation of the materials of treatments performed after formation of the materials
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00—Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/04—Apparatus for manufacture or treatment
    • H10P72/0451—Apparatus for manufacturing or treating in a plurality of work-stations
    • H10P72/0468—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

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  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
JP2015087044A 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム Active JP6501601B2 (ja)

Priority Applications (6)

Application Number Priority Date Filing Date Title
JP2015087044A JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム
US15/304,570 US10128121B2 (en) 2014-05-20 2015-05-18 Substrate processing apparatus, substrate processing method and substrate processing program
PCT/JP2015/064214 WO2015178348A1 (ja) 2014-05-20 2015-05-18 基板処理装置、基板処理方法及び基板処理プログラム
KR1020167020130A KR102364319B1 (ko) 2014-05-20 2015-05-18 기판 처리 장치, 기판 처리 방법 및 기판 처리 프로그램
TW104115712A TWI684664B (zh) 2014-05-20 2015-05-18 基板處理裝置，基板處理方法及基板處理程式
CN201580020853.4A CN106233427B (zh) 2014-05-20 2015-05-18 基板处理装置和基板处理方法

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
JP2014104206 2014-05-20
JP2014104206 2014-05-20
JP2015087044A JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム

Publications (3)

Publication Number Publication Date
JP2016001726A JP2016001726A (ja) 2016-01-07
JP2016001726A5 JP2016001726A5 (enExample) 2018-03-29
JP6501601B2 true JP6501601B2 (ja) 2019-04-17

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JP2015087044A Active JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム

Country Status (6)

Country Link
US (1) US10128121B2 (enExample)
JP (1) JP6501601B2 (enExample)
KR (1) KR102364319B1 (enExample)
CN (1) CN106233427B (enExample)
TW (1) TWI684664B (enExample)
WO (1) WO2015178348A1 (enExample)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517845B2 (ja) * 2017-01-17 2019-05-22 株式会社荏原製作所 スケジューラ、基板処理装置、及び基板搬送方法
JP6586443B2 (ja) * 2017-10-10 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法
JP7261786B2 (ja) * 2018-02-16 2023-04-20 東京エレクトロン株式会社 加工装置
JP7226949B2 (ja) * 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
WO2021240572A1 (ja) 2020-05-25 2021-12-02 株式会社日立ハイテク 半導体装置製造システムおよび半導体装置製造方法
WO2023181265A1 (ja) 2022-03-24 2023-09-28 株式会社日立ハイテク 装置診断システム、装置診断装置、半導体装置製造システムおよび装置診断方法
JPWO2024185561A1 (enExample) * 2023-03-06 2024-09-12

Family Cites Families (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982589A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置の処理システム
JP3708031B2 (ja) * 2001-06-29 2005-10-19 株式会社日立製作所 プラズマ処理装置および処理方法
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
JP5128080B2 (ja) 2006-03-29 2013-01-23 東京エレクトロン株式会社 基板処理装置の制御装置およびその制御方法
US7542820B2 (en) * 2006-09-28 2009-06-02 Lam Research Corporation Methods and arrangement for creating recipes using best-known methods
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム
JP5028193B2 (ja) * 2007-09-05 2012-09-19 株式会社日立ハイテクノロジーズ 半導体製造装置における被処理体の搬送方法

Also Published As

Publication number Publication date
US20170040177A1 (en) 2017-02-09
CN106233427A (zh) 2016-12-14
KR102364319B1 (ko) 2022-02-16
JP2016001726A (ja) 2016-01-07
WO2015178348A1 (ja) 2015-11-26
TWI684664B (zh) 2020-02-11
TW201610210A (zh) 2016-03-16
KR20170004951A (ko) 2017-01-11
CN106233427B (zh) 2019-07-09
US10128121B2 (en) 2018-11-13

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