CN106233427B - 基板处理装置和基板处理方法 - Google Patents

基板处理装置和基板处理方法 Download PDF

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Publication number
CN106233427B
CN106233427B CN201580020853.4A CN201580020853A CN106233427B CN 106233427 B CN106233427 B CN 106233427B CN 201580020853 A CN201580020853 A CN 201580020853A CN 106233427 B CN106233427 B CN 106233427B
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China
Prior art keywords
processing
substrate
procedure
processing procedure
treatment process
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CN201580020853.4A
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English (en)
Chinese (zh)
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CN106233427A (zh
Inventor
佐佐木满
三浦达也
大野利弘
小野和宗
远藤翔子
北原竜
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Tokyo Electron Ltd
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Tokyo Electron Ltd
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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/3065—Plasma etching; Reactive-ion etching
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32926—Software, data control or modelling
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32917—Plasma diagnostics
    • H01J37/32935—Monitoring and controlling tubes by information coming from the object and/or discharge
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02299—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer pre-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02296—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer
    • H01L21/02318—Forming insulating materials on a substrate characterised by the treatment performed before or after the formation of the layer post-treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
    • H01L21/67207—Apparatus for manufacturing or treating in a plurality of work-stations comprising a chamber adapted to a particular process

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Plasma & Fusion (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Drying Of Semiconductors (AREA)
CN201580020853.4A 2014-05-20 2015-05-18 基板处理装置和基板处理方法 Active CN106233427B (zh)

Applications Claiming Priority (5)

Application Number Priority Date Filing Date Title
JP2014-104206 2014-05-20
JP2014104206 2014-05-20
JP2015-087044 2015-04-21
JP2015087044A JP6501601B2 (ja) 2014-05-20 2015-04-21 基板処理装置、基板処理方法及び基板処理プログラム
PCT/JP2015/064214 WO2015178348A1 (ja) 2014-05-20 2015-05-18 基板処理装置、基板処理方法及び基板処理プログラム

Publications (2)

Publication Number Publication Date
CN106233427A CN106233427A (zh) 2016-12-14
CN106233427B true CN106233427B (zh) 2019-07-09

Family

ID=54554018

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201580020853.4A Active CN106233427B (zh) 2014-05-20 2015-05-18 基板处理装置和基板处理方法

Country Status (6)

Country Link
US (1) US10128121B2 (enExample)
JP (1) JP6501601B2 (enExample)
KR (1) KR102364319B1 (enExample)
CN (1) CN106233427B (enExample)
TW (1) TWI684664B (enExample)
WO (1) WO2015178348A1 (enExample)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP6517845B2 (ja) * 2017-01-17 2019-05-22 株式会社荏原製作所 スケジューラ、基板処理装置、及び基板搬送方法
JP6586443B2 (ja) * 2017-10-10 2019-10-02 東京エレクトロン株式会社 被処理体を処理する方法
JP7261786B2 (ja) * 2018-02-16 2023-04-20 東京エレクトロン株式会社 加工装置
JP7226949B2 (ja) * 2018-09-20 2023-02-21 株式会社Ｓｃｒｅｅｎホールディングス 基板処理装置および基板処理システム
WO2021240572A1 (ja) * 2020-05-25 2021-12-02 株式会社日立ハイテク 半導体装置製造システムおよび半導体装置製造方法
JPWO2024185561A1 (enExample) * 2023-03-06 2024-09-12

Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
US20090120580A1 (en) * 2001-06-29 2009-05-14 Akira Kagoshima Disturbance-Free, Recipe-Controlled Plasma Processing System And Method
US20110194924A1 (en) * 2007-09-05 2011-08-11 Hiroyuki Kobayashi Method for transporting object to be processed in semiconductor manufacturing apparatus
JP5296693B2 (ja) * 2006-09-28 2013-09-25 ラム リサーチ コーポレーション 汎用方法を利用したレシピ作成方法および装置

Family Cites Families (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH0982589A (ja) * 1995-09-18 1997-03-28 Kokusai Electric Co Ltd 半導体製造装置の処理システム
JP5128080B2 (ja) 2006-03-29 2013-01-23 東京エレクトロン株式会社 基板処理装置の制御装置およびその制御方法
JP2009054674A (ja) * 2007-08-24 2009-03-12 Tokyo Electron Ltd 製造装置、操作ログ蓄積方法、及びプログラム

Patent Citations (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20090120580A1 (en) * 2001-06-29 2009-05-14 Akira Kagoshima Disturbance-Free, Recipe-Controlled Plasma Processing System And Method
US7292906B2 (en) * 2004-07-14 2007-11-06 Tokyo Electron Limited Formula-based run-to-run control
JP5296693B2 (ja) * 2006-09-28 2013-09-25 ラム リサーチ コーポレーション 汎用方法を利用したレシピ作成方法および装置
US20110194924A1 (en) * 2007-09-05 2011-08-11 Hiroyuki Kobayashi Method for transporting object to be processed in semiconductor manufacturing apparatus

Also Published As

Publication number Publication date
JP6501601B2 (ja) 2019-04-17
US10128121B2 (en) 2018-11-13
WO2015178348A1 (ja) 2015-11-26
TW201610210A (zh) 2016-03-16
TWI684664B (zh) 2020-02-11
JP2016001726A (ja) 2016-01-07
KR102364319B1 (ko) 2022-02-16
CN106233427A (zh) 2016-12-14
KR20170004951A (ko) 2017-01-11
US20170040177A1 (en) 2017-02-09

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