TWI699848B - 基板收納方法及基板處理裝置 - Google Patents
基板收納方法及基板處理裝置 Download PDFInfo
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Abstract
本發明之目的在於延長基板壽命以及提高生產量。
本發明之解決手段係提供一種基板處理裝置之基板收納方法,該基板處理裝置具備有:處理室,係對基板施以處理;第1以及第2基板收納容器,係收納基板;搬送室,係連結該處理室與該第1以及第2基板收納容器,用以搬送基板;具有下述步驟:第1步驟,將收納於該第1基板收納容器之未處理基板搬送至該第2基板收納容器;第2步驟,將收納於該第2基板收納容器之未處理基板搬送至該處理室,來對該未處理基板進行處理;第3步驟,係將該未處理基板經處理後之處理結束的基板從該處理室搬送至該第1基板收納容器;以及第4步驟,係對該第1基板收納容器內導入惰性氣體。
Description
本發明係關於一種基板收納方法及基板處理裝置。
存在有用以收納複數片的晶圓而進行搬送之FOUP(Front Opening Unified Pod)。FOUP係配置於在基板處理裝置所設之加載埠(LP:Load Port)。FOUP內的晶圓於既定時機被搬出,在基板處理裝置所設之處理室經處理後再回到原來的FOUP。若在所有的未處理晶圓從FOUP搬出之前有處理結束的晶圓回到該FOUP,會成為處理結束的晶圓與未處理晶圓相混,而會於晶圓上所形成之元件產生缺失(缺陷)或是於元件特性產生變化。
是以,例如專利文獻1提議了一種技術,為了防止未處理晶圓與處理結束的晶圓相混而使得處理結束的晶圓暫時退避至儲藏部。專利文獻1中揭示了在所有的未處理晶圓從FOUP搬出之時機,使得處理結束的晶圓從儲藏部返回FOUP。此外,專利文獻2中揭示了為了優化FOUP內之雰圍而藉由N2氣體來置換加載埠上的FOUP內之氣體、亦即進行N2沖洗。
先前技術文獻
專利文獻1 日本特開2010-251655號公報
專利文獻2 日本特開2013-179287號公報
但是,儲藏部為晶圓之暫時保管場所,若處理結束的晶圓退避至儲藏部之時間愈長,則晶圓愈會發生缺失或是元件特性出現變化造成在晶圓所形成之元件的壽命(以下也稱為「晶圓壽命」)變短。例如對儲藏部內進行N2沖洗之情況與對FOUP內進行N2沖洗之情況,FOUP較儲藏部更能夠局部性
進行N2氣體所做的氣體置換。因此,對FOUP內進行N2沖洗之效果會比對儲藏部內進行N2沖洗之效果來得高。從而,為了避免於晶圓發生缺失等,減少晶圓停滯於儲藏部之時間、儘早讓處理結束的晶圓返回加載埠上之FOUP內為佳。
針對上述課題,一觀點中,本發明之目的在於延長在基板所形成之元件的壽命並提高生產量。
為了解決上述課題,依據一態樣,係提供一種基板處理裝置之基板收納方法,該基板處理裝置具備有:處理室,係對基板施以處理;第1以及第2基板收納容器,係收納基板;搬送室,係連結該處理室與該第1以及第2基板收納容器,用以搬送基板;具有下述步驟:第1步驟,將收納於該第1基板收納容器之未處理基板搬送至該第2基板收納容器;第2步驟,將收納於該第2基板收納容器之未處理基板搬送至該處理室,來對該未處理基板進行處理;第3步驟,係將該未處理基板經處理後之處理結束的基板從該處理室搬送至該第1基板收納容器;以及第4步驟,係對該第1基板收納容器內導入惰性氣體。
依據一觀點,可延長於基板所形成之元件的壽命並提高生產量。
11‧‧‧處理室
12‧‧‧搬送室
13‧‧‧加載模組
14~16‧‧‧加載埠
17‧‧‧儲藏部
101~125‧‧‧晶圓
LLM‧‧‧加載互鎖室
VTM‧‧‧共通搬送室
圖1係顯示一實施形態相關之基板處理裝置以及基板收納方法之一例之圖。
圖2係顯示比較例相關之基板收納方法之圖。
圖3係顯示一實施形態相關之基板收納處理之一例之流程圖。
圖4係顯示一實施形態相關之基板收納方法之其他例之圖。
圖5係顯示一實施形態相關之基板收納方法之其他例之圖。
以下,針對實施本發明之形態,參見圖式來說明。此外,本說明書以及圖式中針對實質相同構成係賦予相同符號而省略重複說明。
〔基板處理裝置〕
首先,針對本發明之一實施形態相關之基板處理裝置,參見圖1來說明。基板處理裝置具有:處理室(PM:Process Module)11、搬送室(VTM:Vacuum Transfer Module,LLM:Load Lock Module)12、加載模組(LM:Loader Module)13、3個加載埠(Load Port)14~16、以及儲藏部17。
處理室11係對晶圓施行既定處理。處理室11之數量可為1個也可為複數個。處理室11係連結配置於搬送室12。處理室11與搬送室12之間係藉由閘閥來可開閉地連接,分別保持於既定真空狀態。處理室11係在減壓至既定真空雰圍的狀態下利用電漿或是無電漿來對晶圓施以蝕刻處理、成膜處理、潔淨處理、灰化(ashing)處理等既定處理。
搬送室12之加載互鎖室LLM係設置於搬送室12之共通搬送室VTM與加載模組LM之間。加載互鎖室LLM與共通搬送室VTM之間係以閘閥來可開閉地連接著。加載互鎖室LLM係於大氣雰圍與真空雰圍做切換而將晶圓從大氣側的加載模組LM搬送至真空側之搬送室VTM、或是從真空側之搬送室VTM搬送至大氣側之加載模組LM。
於加載模組13之長邊側壁具備有3個加載埠14~16。加載埠14~16分別安裝著例如收容有25片晶圓的FOUP或是空的FOUP。處理前的晶圓(以下也稱為「未處理晶圓」)係從加載埠14~16上之FOUP往處理室11搬出。於處理室11經過處理後的晶圓(以下也稱為「處理結束的晶圓」)係返回原來的FOUP。加載埠之數量可為1個也可為複數個。於加載模組LM以及搬送室12之內部配置著可保持並搬送晶圓之搬送裝置。
儲藏部17係將晶圓暫時保管。儲藏部17相較於個別加載埠14~16具有寬廣的空間,相較於各加載埠14~16可載置更多的晶圓。儲藏部17也可在加載模組13內。
此外,加載埠14~16為第1基板收納容器之一例,儲藏部17為第2基板收納容器之一例。搬送室12(VTM,LLM)以及加載模組13為搬送晶圓之搬送室之一例。
控制部20具有CPU(Central Processing Unit)21、ROM(Read Only Memory)22、RAM(Random Access Memory)23以及HDD(Hard Disk Drive)24。此外,控制部20不限於HDD24也可具有SSD(Solid State Drive)等其他記憶區
域。
CPU21係依據設定了程序順序或程序條件之配方來控制處理室11中晶圓的處理。HDD24儲存有程序配方(設定有對晶圓施以既定處理之際的順序、程序條件)。其中,程序配方之記憶區域也可為ROM22、RAM23。HDD24、RAM23也可記憶著用以實行後述基板收納方法之程式。用以實行程序配方、基板收納方法之程式也可儲存於記憶媒體而被提供。此外,此等程序配方以及程式也可經由網路而從外部裝置被提供。此外,控制部20之機能可藉由使用軟體進行動作的方式來實現,也可藉由使用硬體進行動作來實現。
〔N2沖洗〕
一旦處理結束的晶圓搬入至加載埠14~16上的FOUP,來自一個處理結束的晶圓之外界氣體會和來自其他處理結束的晶圓之外界氣體起反應而於晶圓W上的元件產生缺失或是造成元件特性出現變化。
是以,本實施形態之加載埠14~16,為了延長在晶圓所形成之元件的壽命而對加載埠14~16內導入N2(氮)氣體,進行FOUP之內部氣體以N2氣體做置換之N2沖洗。亦可取代N2氣體而改為導入Ar(氬)氣體等惰性氣體。藉此,來自晶圓之外界氣體可排氣至加載埠14~16外。此外,針對儲藏部17也可對其內部導入N2氣體,而進行儲藏部17內之氣體以N2氣體做置換之N2沖洗。
〔基板收納方法:比較例〕
此處,針對比較例之基板收納方法,參見圖2來說明。比較例之基板收納方法顯示了加載埠14上之FOUP內的未處理晶圓「101」、「102」...係依序搬送至真空處理側而於處理室11受到處理,處理結束的晶圓「101」、「102」...係依序搬送至儲藏部17之狀態。處理結束的晶圓「101」、「102」...係返回加載埠14上的原本FOUP。
將處理結束的晶圓從儲藏部17搬送至加載埠14上之FOUP之際,判定加載埠14上之FOUP內是否有未處理晶圓。如圖2(a)所示般,若FOUP內有未處理晶圓,則處理結束的晶圓「101」、「102」...不會從儲藏部17搬送至FOUP。另一方面,如圖2(b)所示般,一旦FOUP內變空,則處理結束的晶圓「101」、「102」...從儲藏部17搬送至FOUP。
此時,若處理結束的晶圓退避至儲藏部17之時間愈長,則晶圓上愈會發生缺失或是元件特性出現變化造成晶圓所形成之元件的壽命縮短。例如對儲藏部17內進行N2沖洗之情況與對加載埠14~16內進行N2沖洗之情況,由於加載埠14~16相較於儲藏部17可更局部性地進行N2沖洗,而可更為抑制缺失等的發生。因此,為了延長晶圓壽命,減少晶圓停滯於儲藏部17之時間,儘早讓處理結束的晶圓返回加載埠14~16上之FOUP內為佳。是以,本實施形態係藉由以下所說明之基板收納方法來搬送基板。
〔基板收納方法:本實施形態例〕
關於本實施形態之基板收納方法,參見圖1以及圖3來說明。圖3係顯示本實施形態相關之基板收納處理之一例的流程圖。圖1係顯示使用本實施形態相關之基板處理裝置的基板收納方法之一例。
一旦開始圖3所示基板收納處理,則控制部20會將加載埠上的收納於FOUP之未處理晶圓搬送至儲藏部17(步驟S10:第1步驟)。例如,如圖1(a)所示般,於加載開始後立即開始進行加載埠14上之FOUP內的未處理晶圓之搬送,將所有的未處理晶圓「101」~「125」搬送、收納至儲藏部17。
其次,控制部20判定原本的FOUP是否變空(步驟S12)。控制部20係等待直到原本的FOUP變空,一旦判定原本的FOUP變空,則將收納於儲藏部17之未處理晶圓經由加載模組13以及搬送室12搬送至處理室11,於處理室11對未處理晶圓施以既定處理(步驟S14:第2步驟)。
其次,將處理結束的晶圓從處理室11搬送到原本的FOUP(步驟S16:第3步驟)。其次,控制部20對FOUP內導入N2氣體(步驟S18:第4步驟),結束本處理。此外,對FOUP內導入N2氣體之時機可為第3步驟之動作前或是和第3步驟之動作併行。藉此,如圖1(b)所示般,處理結束的晶圓在不和未處理晶圓相混的狀態下配置於經N2沖洗之加載埠14上的FOUP內。
以上,依據本實施形態之基板收納方法,可一面避免未處理晶圓與處理結束的晶圓在FOUP內相混、一面將處理結束的晶圓配置於經N2沖洗的FOUP內來抑制於晶圓出現缺失等。藉此,可延長於晶圓所形成之元件的壽命。
具體而言,藉由於批次開始後立即將加載埠上的未處理晶圓全數先搬
送至儲藏部17,可防止處理結束的晶圓與未處理晶圓之相混,並可讓處理結束的晶圓儘速回到經N2沖洗之加載埠上原本的FOUP內。藉此,可更為提高N2沖洗效果,有效抑制缺失或於元件特性出現變化,可延長晶圓的壽命。
此外,依據本實施形態之基板收納方法,可提高生產量。從前的序列係等待FOUP變空,在FOUP變空後從儲藏部進行晶圓往FOUP之回收。如此之方法,若晶圓於處理室11之處理時間變長,由於FOUP變空會變慢,故晶圓回收作業之開始會變慢。相對於此,本實施形態之基板收納方法,即使於處理室11之處理時間變長,由於最初的晶圓在處理室11受處理之階段FOUP已變空,故處理室11之處理時間不會成為處理效率上之關鍵因素,可進行晶圓朝FOUP之回收。藉此,可提高生產量。
〔搬送時機〕
以上所說明之本實施形態的基板收納方法,也可從加載埠上之FOUP搬出所有的未處理晶圓後,將收納於儲藏部17之未處理晶圓搬送至處理室11。
(變形例1)
在其他變形例方面,舉出FOUP內所有的未處理晶圓搬入儲藏部17前,將收納於儲藏部17之未處理晶圓朝處理室11搬出之方法。例如,可在FOUP內之未處理晶圓成為既定片數(例如1片~數片)之時點將收納於儲藏部17之未處理晶圓朝處理室11搬送。藉此,可提高生產量。
(變形例2)
此外,例如從FOUP最後搬出的既定片數之未處理晶圓也可不搬送至儲藏部17而是直接搬送至處理室11,處理後,直接返回原本的FOUP。
例如搬入儲藏部17之未處理晶圓能以「125」、「124」...的方式從晶圓編號在後面的未處理晶圓依序進行搬送。最後之未處理晶圓「101」若直接搬送至處理室11經處理後,在FOUP內變空後直接返回原本的FOUP,可提高生產量故為所喜好者。最後起算第二片的晶圓「102」可搬送至儲藏部17,也可搬送至搬送室12,於晶圓「101」之處理後再搬送至處理室11。處理結束的晶圓「102」和第一片的處理結束的晶圓「101」同樣地回到原本的FOUP內為佳。再者,也可將未處理晶圓「103」以及後續的未處理晶圓搬送至搬送室12,再依序搬送至處理室11。即便於此情況,若處理結束的晶圓直接
返回原本的FOUP內,可進而提高生產量。
圖4(a)顯示從FOUP最後搬出之3片的未處理晶圓「101」、「102」、「103」不搬送至儲藏部17而是直接搬送至處理室11,處理後,再直接返回原本的FOUP之例。從FOUP搬送至儲藏部17之剩餘的未處理晶圓「104」~「125」係於未處理晶圓「101」、「102」、「103」之處理後搬送至處理室11,於處理後返回原本的FOUP。藉此,可減少經由儲藏部17搬送至處理室11之晶圓片數,可提高生產量。
當原本的FOUP內不存在未處理晶圓之情況,處理結束的晶圓「101」、「102」、「103」於處理後立即從處理室11直接返回原本的FOUP內。另一方面,當原本的FOUP內存在著未處理晶圓之情況,如圖4(b)所示般,在處理室11經過處理之處理結束的晶圓「101」係暫時地保管於儲藏部17內。此外,也可在FOUP內之未處理晶圓全數搬出後將處理結束的晶圓「101」從儲藏部17搬送至原本的FOUP。於此情況,處理結束的晶圓「101」儘可能保管於遠離儲藏部17內之未處理晶圓的載置場所之場所為佳。藉此,可減少於晶圓上發生缺失等的風險。處理結束的晶圓「102」、「103」在處理室11受到處理後,係從處理室11直接返回已搬送處理結束的晶圓「101」之原本的FOUP內。
(變形例3)
此外,例如當處理室11為複數之情況,至少將對應於處理室11個數的未處理晶圓直接搬送至處理室11側,在原本的FOUP內變空後,讓處理結束的晶圓直接返回FOUP內,由於可更為提高生產量故為所喜好者。
(變形例4)
此外,例如對同一FOUP內之未處理晶圓施以處理之條件(程序條件)不同的情況,也可依據程序條件來改變搬送路徑。例如,當有容易因來自處理結束的晶圓之外界氣體而產生缺失的程序條件A以及不易產生缺失的程序條件B之情況,被施以了容易產生缺失之程序條件A之處理的處理結束的晶圓也可從處理室11直接返回FOUP內。此外,被施以了不易產生缺失之程序條件B之處理的處理結束的晶圓可從處理室11暫時收納於儲藏部17,再從儲藏部17返回FOUP內。藉此,可使得容易因外界氣體而產生缺失之處理結
束的晶圓儘可能於早期返回FOUP內,可減少程序條件不同的處理結束的晶圓在FOUP內相混之時間。藉此,可提高FOUP內之N2沖洗的效果,可延長在晶圓所形成之元件的壽命。
例如,如圖5(a)所示般,實行基於程序條件A(容易因來自處理結束的晶圓之外界氣體而產生缺失)之處理的晶圓「101」~「103」係直接搬送至處理室11。此外,處理後,晶圓「101」~「103」可經由直接返回FOUP內的第2搬送路徑。
另一方面,如圖5(a)以及(b)所示般,實行基於程序條件B(不易因來自處理結束的晶圓之外界氣體而產生缺失)之處理的晶圓「104」~「125」可經由儲藏部17→處理室11→返回原本的FOUP之第1搬送路徑。晶圓「104」~「125」能以儲藏部17→處理室11→儲藏部17→返回原本的FOUP的方式來變更搬送路徑。
以上,藉由上述實施形態說明了基板收納方法以及基板處理裝置,但本發明之基板收納方法以及基板處理裝置不限定於上述實施形態,可在本發明之範圍內進行各種變形以及改良。上述複數實施形態所記載之事項可在不產生矛盾的範圍內進行組合。
例如,本發明相關之基板收納方法可適用於具有二個以上(例如六個)處理室之基板處理裝置或是例如具有二個處理室之平行型基板處理裝置。處理室係對晶圓施以電漿處理或熱處理。當對晶圓施以電漿處理之情況,可使用電容耦合型電漿(CCP:Capacitively Coupled Plasma)裝置、感應耦合型電漿(ICP:Inductively Coupled Plasma)裝置、使用輻線狹縫天線之電漿處理裝置、螺旋波激發型電漿(HWP:Helicon Wave Plasma)裝置、電子迴旋共振電漿(ECR:Electron Cyclotron Resonance Plasma)裝置。
本說明書雖在蝕刻對象係針對半導體晶圓W做了說明,但也可為LCD(Liquid Crystal Display)、FPD(Flat Panel Display)等所使用之各種基板、光罩、CD基板、印刷基板等。
11‧‧‧處理室
12‧‧‧搬送室
13‧‧‧加載模組
14~16‧‧‧加載埠
17‧‧‧儲藏部
20‧‧‧控制部
21‧‧‧CPU
22‧‧‧ROM
23‧‧‧RAM
24‧‧‧HDD
101~125‧‧‧晶圓
LLM‧‧‧加載互鎖室
VTM‧‧‧共通搬送室
Claims (5)
- 一種基板處理裝置之基板收納方法,該基板處理裝置具備有:處理室,係對基板施以處理;第1以及第2基板收納容器,係收納基板;搬送室,係連結該處理室與該第1以及第2基板收納容器,用以搬送基板;具有下述步驟:第1步驟,將收納於該第1基板收納容器之未處理基板搬送至該第2基板收納容器;第2步驟,將收納於該第2基板收納容器之未處理基板搬送至該處理室,來對該未處理基板進行處理;第3步驟,係將該未處理基板經處理後之處理結束的基板從該處理室搬送至該第1基板收納容器;以及第4步驟,係對該第1基板收納容器內導入惰性氣體;該第1基板收納容器內之未處理基板當中最後搬出之既定片數的未處理基板並不經由該第2基板收納容器即搬送至該處理室,而返回該第1基板收納容器。
- 如申請專利範圍第1項之基板收納方法,其中該第3步驟在該第1基板收納容器中無未處理基板之情況,將處理結束的基板從該處理室搬送至該第1基板收納容器。
- 如申請專利範圍第1或2項之基板收納方法,其中該第3步驟在該第1基板收納容器具有未處理基板之情況,係將處理結束的基板從該處理室搬送至該第2基板收納容器;在所有的未處理基板從該第1基板收納容器搬出後,將該第2基板收納容器內之處理結束的基板搬送至該第1基板收納容器。
- 如申請專利範圍第1或2項之基板收納方法,其中該第2步驟係從該第1基板收納容器將所有的未處理基板搬出後,將未處理基板從該第2基板收納容器搬送至該處理室。
- 一種基板處理裝置,具備有:處理室,係對基板施以處理;第1以及第2基板收納容器,係收納基板;搬送室,係連結該處理室與該第1以及第2 基板收納容器,用以搬送基板;以及控制部;該控制部係將收納於該第1基板收納容器之未處理基板搬送至該第2基板收納容器;將收納於該第2基板收納容器之未處理基板搬送至該處理室,對該未處理基板進行處理;將該未處理基板經處理後之處理結束的基板從該處理室搬送至該第1基板收納容器;對該第1基板收納容器內導入惰性氣體;該第1基板收納容器內之未處理基板當中最後搬出之既定片數的未處理基板並不經由該第2基板收納容器即搬送至該處理室,而返回該第1基板收納容器。
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