TWI683401B - 半導體結構及其形成方法 - Google Patents

半導體結構及其形成方法 Download PDF

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TWI683401B
TWI683401B TW107125096A TW107125096A TWI683401B TW I683401 B TWI683401 B TW I683401B TW 107125096 A TW107125096 A TW 107125096A TW 107125096 A TW107125096 A TW 107125096A TW I683401 B TWI683401 B TW I683401B
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Taiwan
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die
rewiring
rewiring structure
semiconductor
conductive
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TW107125096A
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TW201923998A (zh
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裴浩然
謝靜華
劉重希
陳正庭
林志偉
林修任
陳威宇
張家綸
鄭佳申
曹智強
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台灣積體電路製造股份有限公司
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Abstract

一種半導體結構，包括：晶粒，嵌入於模製材料中，晶粒在第一側上具有晶粒連接件；第一重佈線結構，位於晶粒之第一側處，第一重佈線結構經由晶粒連接件電性耦接至晶粒；第二重佈線結構，位於與第一側相對的晶粒之第二側處；以及導熱材料，位於第二重佈線結構中，晶粒插入於導熱材料與第一重佈線結構之間，導熱材料延伸穿過第二重佈線結構，且導熱材料經電性隔離。

Description

半導體結構及其形成方法
本發明的實施例是有關於半導體結構及其形成方法。
歸因於多種電子組件(例如，電晶體、二極體、電阻器、電容器等)之積體密度的持續改進，半導體行業已經歷快速發展。在最大程度上，積體密度的此改進來自最小特徵大小之反覆減小，這允許將更多組件整合於給定區域中。由於近年來對甚至更小的電子裝置之需求增長，因而對半導體晶粒的更小及更具創造性之封裝技術的需求增長。
這些封裝技術的實例為疊層封裝(Package-on-Package；POP)技術。在PoP封裝中，頂部半導體封裝體堆疊於底部半導體封裝體之頂部上以允許高水準之整合及組件密度。另一實例為多晶片模組(Multi-Chip-Module；MCM)技術，其中多個半導體晶粒封裝於一個半導體封裝體中以提供具有積體功能之半導體裝置。
進階封裝技術之高水準的整合能夠產生具有增強型功能及小佔據面積的半導體裝置，這有利於諸如移動電話、平板電腦 以及數字音樂播放器的小外觀尺寸裝置。另一優勢為連接半導體封裝體內之互操作部件的導電路徑之縮短長度。此改進半導體裝置之電學效能，因為電路之間的互連件之較短佈線得到較快信號傳播以及減少之雜訊及串擾。
本發明實施例的一種半導體結構，包括：晶粒，嵌入於模製材料中，所述晶粒在第一側上具有晶粒連接件；第一重佈線結構，位於所述晶粒之所述第一側，所述第一重佈線結構經由所述晶粒連接件電性耦接至所述晶粒；第二重佈線結構，位於與所述第一側相對的所述晶粒之第二側；以及導熱材料，位於所述第二重佈線結構中，所述晶粒插入於所述導熱材料與所述第一重佈線結構之間，所述導熱材料延伸穿過所述第二重佈線結構，且所述導熱材料經電性隔離。
本發明實施例的一種半導體結構，包括：第一重佈線結構；第二重佈線結構；晶粒，插入於所述第一重佈線結構與所述第二重佈線結構之間，其中所述晶粒之前側面向所述第一重佈線結構；模製材料，圍繞所述晶粒且插入於所述第一重佈線結構與所述第二重佈線結構之間；熱耗散結構，至少部分地嵌入於所述第二重佈線結構中，其中所述熱耗散結構經電性隔離且自所述第二重佈線結構之第一側延伸至所述第二重佈線結構之相對第二側，且其中所述晶粒在所述熱耗散結構與所述第一重佈線結構之間；以及半導體封裝體，電性耦接至所述第二重佈線結構。
本發明實施例的一種形成半導體結構的方法，包括：將晶 粒貼合至第一重佈線結構的第一側；在所述第一重佈線結構之所述第一側上形成導電柱；在所述晶粒與所述導電柱之間形成模製材料；在所述晶粒、所述導電柱以及所述模製材料上方形成第二重佈線結構；在所述第一重佈線結構中形成第一開口，所述第一開口在所述晶粒之側向範圍內，所述第一開口延伸穿過所述第一重佈線結構；以及在所述第一開口中形成金屬膏，所述金屬膏經電性隔離。
101‧‧‧載體
110、140‧‧‧重佈線結構
111、113、142、144、146、148‧‧‧介電層
111U、166U‧‧‧上部表面
112、112P‧‧‧虛設金屬圖案
114‧‧‧導電特徵
115、143‧‧‧導電線
116、116A、116B‧‧‧開口
118‧‧‧黏著膜
119‧‧‧導電柱
120‧‧‧晶粒
121‧‧‧元件
123、132‧‧‧虛設金屬層
126‧‧‧接墊
127‧‧‧鈍化膜
128‧‧‧晶粒連接件
129‧‧‧介電材料
130、165‧‧‧模製材料
145‧‧‧通孔
147‧‧‧凸塊下金屬化(UBM)結構
155‧‧‧連接件
157‧‧‧框架
159‧‧‧載帶
160、1100、1100A、1100B、1100C、1100D、1200、1300、1400、1400A、1400B、1400C、1400D、1400E、1400F、1400G、1400H‧‧‧半導體封裝體
161‧‧‧基底
162‧‧‧半導體晶粒
163‧‧‧導電接墊
164‧‧‧焊錫膏
166‧‧‧導熱材料/金屬膏
166S‧‧‧側壁
167‧‧‧接線
168、173‧‧‧導電接合部
168L‧‧‧下部部分
168T‧‧‧介面
168U‧‧‧上部部分
169、175‧‧‧底填充材料
171‧‧‧電氣裝置
300‧‧‧區域
3000、3010、3020、3030、3040、3050、3060‧‧‧方法
A-A、B-B、C-C、D-D‧‧‧直線
D1、D2‧‧‧距離
P‧‧‧偏移量
W1、W2‧‧‧寬度
當結合附圖閱讀時，自以下詳細描述最佳地理解本揭露內容之態樣。應注意，根據業界中之標準慣例，各種特徵未按比例繪製。實際上，為論述之清楚起見，可任意增大或減小各種特徵之尺寸。
圖1至圖8根據實施例說明各製造階段處之半導體封裝體的橫截面視圖。
圖9至圖11、圖12A、圖12B、圖13至圖15、圖16A、圖16B、圖17至圖23根據各種實施例說明各種半導體封裝體的橫截面視圖。
圖24根據一些實施例說明用於形成半導體封裝體之方法的流程圖。
以下揭露內容提供用於實施本發明之不同特徵的許多不同實施例或實例。下文描述組件及配置之特定實例以簡化本揭露 內容。當然，這些組件及配置僅為實例且不意欲為限制性的。舉例而言，在以下描述中，第一特徵在第二特徵上方或上之形成可包含第一特徵與第二特徵直接接觸地形成的實施例，且亦可包含額外特徵可在第一特徵與第二特徵之間形成以使得第一特徵與第二特徵可不直接接觸的實施例。
此外，為易於描述，可在本文中使用諸如「在…下方」「在…下」、「下部」、「在…上」、「上部」及類似者的空間相對術語以描述如圖式中所說明的一個元件或特徵與另一(一些)元件或特徵的關係。除了圖式中所描繪之定向以外，空間相對術語亦意欲涵蓋裝置在使用或操作中的不同定向。設備可以其他方式定向(旋轉90度或處於其他定向)，且本文中所使用之空間相對描述詞可同樣相應地進行解釋。
本揭露內容之實施例論述於半導體封裝體及形成所述半導體封裝體且尤其積體扇出型(integrated fan-out；InFO)半導體封裝體之方法的上下文中。在一些實施例中，半導體封裝體具有嵌入於模製材料中之晶粒，以及晶粒之相對側上的重佈線結構(例如背側重佈線結構及前側重佈線結構)。在一些實施例中，背側重佈線結構之介電層的部分經移除以在背側重佈線結構中形成一或多個開口。在一些實施例中，一或多個開口直接在晶粒之背側上方。在所說明之實施例中，諸如銅膏、銀膏或焊錫膏的金屬膏形成於一或多個開口中，且在後續回焊製程中固化。由於金屬膏之高熱導率，因而改進半導體封裝體之熱耗散。
圖1至圖8根據實施例說明各製造階段處之半導體封裝體1100的橫截面視圖。在圖1中，重佈線結構110形成於載體101 上方。重佈線結構110包括形成於一或多個介電層(例如介電層111及介電層113)中之導電特徵(例如導電線115)。圖1亦說明重佈線結構110的虛設金屬圖案112，所述虛設金屬圖案112經電性隔離。導電柱119形成於重佈線結構110上方且經電性耦接至重佈線結構110。
載體101可由諸如矽、聚合物、聚合物複合物、金屬箔、陶瓷、玻璃、玻璃環氧樹脂、氧化鈹、載帶的材料或用於結構支撐的其他適合之材料製成。重佈線結構110形成於載體101上方。重佈線結構110包括導電特徵，諸如一或多層的導電線(例如導電線115)及通孔(未展示)；以及一或多個介電層(例如介電層111、介電層113)。儘管在圖1中說明兩個介電層，但大於或小於兩個介電層可形成於重佈線結構110中。同樣，一或多層之導電線及一或多層之導電通孔可形成於重佈線結構110中。
在一些實施例中，黏著層(未展示)在形成重佈線結構110之前沈積或層壓於載體101上方。黏著層可為感光性的且可藉由例如在後續載體剝離製程中於載體101上照射紫外(ultra-violet；UV)光來容易地自載體101剝落。舉例而言，黏著層可為由明尼蘇達州聖保羅的3M公司(3M Company)製造的光-熱轉換(light-to-heat-conversion；LTHC)塗層。
接下來，介電層111形成於載體101上方，或若形成有黏著層，則形成於黏著層(例如LTHC塗層)上方。在一些實施例中，介電層111由以下各者形成：聚合物，諸如聚苯并噁唑(polybenzoxazole；PBO)、聚醯亞胺、苯并環丁烯(benzocyclobutene；BCB)或類似者；氮化物，諸如氮化矽；氧化 物，諸如氧化矽、磷矽酸鹽玻璃(phosphosilicate glass；PSG)、硼矽酸鹽玻璃(borosilicate glass；BSG)、硼摻雜磷矽酸鹽玻璃(boron-doped phosphosilicate glass；BPSG)或類似者。介電層111可藉由諸如旋塗、化學氣相沈積(chemical vapor deposition；CVD)、層壓、類似者或其組合的合適之沈積製程來形成。
接下來，重佈線結構110之導電特徵(例如導電特徵115、導電特徵112)形成於介電層111上方。在一些實施例中，重佈線結構110之導電特徵包括由諸如銅、鈦、鎢、鋁或類似者的合適之導電材料形成的導電線(例如導電線115)及虛設金屬圖案(例如虛設金屬圖案112)。在一些實施例中，導電特徵(例如導電線115及虛設金屬圖案112)藉由以下來形成：在介電層111上方形成晶種層(未展示)；在晶種層上方形成具有經設計圖案(例如開口)之經圖案化光阻；將導電材料電鍍(例如電鍍或無電電鍍)於經設計圖案中且電鍍於晶種層上方；以及移除光阻及不形成導電材料的晶種層之部分。形成重佈線結構110之其他方法亦為可能的且全部意欲包含於本揭露內容之範疇內。
如圖1中之實例所說明，虛設金屬圖案112使用與形成導電線115相同的材料在相同處理步驟中形成。虛設金屬圖案112經電性隔離(例如未連接至功能性電路)。虛設金屬圖案112形成於晶粒120(參見圖2)將貼合至重佈線結構110的區域中。如將在下文中更詳細地論述，虛設金屬圖案112可有利地改進所形成半導體封裝體1100之熱耗散。在一些實施例中，省略虛設金屬圖案112。
接下來，介電層113形成於導電特徵(例如導電特徵115 及導電特徵112)上方且形成於介電層111上方。介電層113之材料及介電層113之形成方法可與介電層111的材料及形成方法相同或類似，因此不重複細節。在下文中之論述中，重佈線結構110亦可稱為背側重佈線結構。
仍參考圖1，導電柱119形成於重佈線結構110上方。導電柱119可藉由以下來形成：在重佈線結構110之最上部介電層(例如介電層113)中形成開口以暴露下伏導電特徵(例如銅接墊或銅線)；在重佈線結構110之最上部介電層上方及在開口中形成晶種層；在晶種層上方形成經圖案化光阻，其中經圖案化光阻中之開口中的每一者與待形成之導電柱119的位置相對應；使用例如電鍍或無電電鍍利用諸如銅的導電材料來填充開口；使用例如灰化(ashing)或剝除(stripping)製程移除光阻；以及移除晶種層上不形成導電柱119之部分。用於形成導電柱119之其他方法亦為可能的且全部意欲包含於本揭露內容之範疇內。
本揭露內容之各種實施例說明具有背側重佈線結構110的半導體封裝體(例如半導體封裝體1100、半導體封裝體1200、半導體封裝體1300、半導體封裝體1400、半導體封裝體1400A至半導體封裝體1400H、半導體封裝體1100A至半導體封裝體1100D)。然而，本揭露內容之原理適用於不具有背側重佈線結構的半導體封裝體。因此，可省略所揭露實施例(例如1100、1200、1300、1400、1400A至1400H、1100A至1100D)中之每一者的背側重佈線結構110。在不形成背側重佈線結構110之實施例中，導電柱119可藉由以下處理形成於載體101上方：在載體101上方形成黏著層(例如LTHC塗層)；在黏著層(例如LTHC塗層)上 方形成介電層(例如介電層111)；在介電層(例如介電層111)上方形成晶種層；在晶種層上方形成經圖案化光阻，其中經圖案化光阻中之開口中的每一者與待形成之導電柱119的位置相對應；使用例如電鍍或無電電鍍利用諸如銅的導電材料來填充開口；使用例如灰化或剝除製程移除光阻；以及移除晶種層上不形成導電柱119的部分。對於不具有背側重佈線結構110之實施例，後續處理步驟可類似於下文中針對具有背側重佈線結構之實施例所描述的彼等者。在閱讀本揭露內容時，本領域的技術人員將能夠修改下文中之描述以用於不具有背側重佈線結構110之實施例中。這些及其他修改全部意欲包含於本揭露內容之範疇內。
接下來，在圖2中，其背側上具有虛設金屬層123的半導體晶粒120(亦可稱為晶粒或積體電路(integrated circuit；IC)晶粒)貼合至重佈線結構110之上部表面。諸如晶粒貼合膜(die attaching film；DAF)的黏著膜118可用於將晶粒120貼合至重佈線結構110。
在黏著至重佈線結構110之前，晶粒120可根據可應用製造製程進行處理以在晶粒120中形成積體電路。舉例而言，晶粒120可包含半導體基底及一或多個上覆金屬化層，共同地說明為元件121。半導體基底可為例如經摻雜或未經摻雜的矽，或絕緣層上半導體(semiconductor-on-insulator；SOI)基底之主動層。半導體基底可包含：其他半導體材料，諸如鍺；化合物半導體，包含碳化矽、砷化鎵、磷化鎵、氮化鎵、磷化銦、砷化銦及/或銻化銦；合金半導體，包含矽鍺(SiGe)、磷化鎵砷(GaAsP)、砷化銦鋁(AlInAs)、砷化鎵鋁(AlGaAs)、砷化銦鎵(GaInAs)、磷化銦鎵 (GaInP)及/或磷砷化銦鎵(GaInAsP)；或其組合。亦可使用其他基底，諸如多層基底或梯度基底。諸如電晶體、二極體、電容器、電阻器等的裝置(未展示)可形成於半導體基底中且/或形成於半導體基底上，且可藉由例如半導體基底上之一或多個介電層中的金屬化圖案的金屬化層來進行互連以形成積體電路。
晶粒120進一步包括進行外部連接之接墊126，諸如鋁接墊。接墊126在可稱為晶粒120之主動側或前側的位置上。晶粒120進一步包括晶粒120之前側處及接墊126之部分上的鈍化膜127。開口延伸穿過鈍化膜127至接墊126。諸如導電柱(例如包括諸如銅的金屬)的晶粒連接件128延伸至鈍化膜127之開口中且機械及電性耦接至相應接墊126。晶粒連接件128可藉由例如電鍍或類似方法來形成。晶粒連接件128電性耦接至晶粒120之積體電路。
介電材料129形成於晶粒120之主動側上，諸如形成於鈍化膜127及/或晶粒連接件128上形成。介電材料129側向包封晶粒連接件128，且介電材料129與晶粒120側向共端。介電材料129可為：聚合物，諸如聚苯并噁唑(PBO)、聚醯亞胺、苯并環丁烯(BCB)或類似者；氮化物，諸如氮化矽或類似者；氧化物，諸如氧化矽、磷矽酸鹽玻璃(PSG)、硼矽酸鹽玻璃(BSG)、硼摻雜磷矽酸鹽玻璃(BPSG)或類似者；或其組合，且可例如藉由旋塗、層壓、CVD或類似製程來形成。
圖2進一步說明在晶粒120之背側上形成之虛設金屬層123。舉例而言，虛設金屬層123可具有與晶粒120之背側相同的大小(例如長度、寬度以及面積)。虛設金屬層123可包括用於熱 耗散的合適之金屬，例如銅，且可藉由電鍍、濺鍍、塗佈、層壓或其他合適之方法形成於晶粒120之背側上方。儘管其他尺寸亦為可能的，但虛設金屬層123之厚度可介於幾微米(例如約2微米)至數十微米(例如小於100微米)之範圍內，。在所說明之實施例中，虛設金屬層123經電性隔離，且因此不連接至任何功能性電路。
接下來，在圖3中，模製材料130形成於重佈線結構110上方、晶粒120周圍以及導電柱119周圍。作為實例，模製材料130可包括環氧樹脂、有機聚合物、添加或不添加矽石類或玻璃填充劑的聚合物或其他材料。在一些實施例中，模製材料130在應用時包括作為凝膠型液體之液體模製化合物(liquid molding compound；LMC)。模製材料130在應用時亦可包括液體或固體。可替代地，模製材料130可包括其他絕緣及/或包封材料。模製材料130在一些實施例中使用晶圓級模製製程來應用。模製材料130可使用例如壓縮模製、轉移模製或其他方法來模製。
接下來，模製材料130在一些實施例中使用固化製程來固化。固化製程可包括使用退火製程或其他加熱製程在預定時間段將模製材料130加熱至預定溫度。固化製程亦可包括紫外(UV)曝光製程、紅外(infrared；IR)能量曝光製程、其組合或其與加熱製程之組合。可替代地，模製材料130可使用其他方法來固化。在一些實施例中，不包含固化製程。
接下來，可執行諸如化學及機械研磨(chemical and mechanical polish；CMP)的平坦化製程以移除模製材料130在晶粒120之前側上方的過量部分。在平坦化製程之後，在一些實施 例中，模製材料130、導電柱119以及晶粒連接件128具有共面的上部表面。
接下來參考圖4，重佈線結構140(亦可稱為前側重佈線結構)形成於模製材料130、導電柱119以及晶粒120上方。重佈線結構140包括形成於一或多個介電層(例如介電層142、介電層144、介電層146以及介電層148)中的一或多層之導電特徵(例如導電線143、通孔145)。
在一些實施例中，一或多個介電層(例如介電層142、介電層144、介電層146以及介電層148)由以下各者形成：聚合物，諸如PBO、聚醯亞胺、BCB或類似者；氮化物，諸如氮化矽；氧化物，諸如氧化矽、PSG、BSG、BPSG或類似者。一或多個介電層可藉由諸如旋塗、CVD、層壓、類似者或其組合的合適之沈積製程來形成。
在一些實施例中，重佈線結構140之導電特徵包括由諸如銅、鈦、鎢、鋁或類似者的合適之導電材料形成的導電線(例如導電線143)及導電通孔(例如導電通孔145)。重佈線結構140可藉由以下來形成：形成介電層，在介電層中形成開口以暴露下伏導電特徵，在介電層上方及開口中形成晶種層(未展示)，在晶種層上方形成具有經設計圖案之經圖案化光阻(未展示)，將導電材料電鍍(例如電鍍或無電電鍍)於經設計圖案中及晶種層上方，以及移除光阻及晶種層上不形成導電材料之部分。形成重佈線結構140之其他方法亦為可能的且全部意欲包含於本揭露內容之範疇內。
圖4之重佈線結構140中之介電層的數目及導電特徵之層 的數目僅為非限制性實例。介電層之其他數目及導電特徵之層的其他數目亦為可能的且全部意欲包含於本揭露內容之範疇內。
圖4亦說明形成於重佈線結構140上方且電性耦接至所述重佈線結構的凸塊下金屬化(under bump mctallization；UBM)結構147。為形成UBM結構147，開口形成於重佈線結構140之最頂部介電層(例如，介電層142)中以暴露重佈線結構140之導電特徵(例如銅線或銅接墊)。在形成開口之後，UBM結構147可形成為與經暴露之導電特徵電接觸。在一實施例中，UBM結構147包括三個導電材料層，諸如鈦層、銅層以及鎳層。然而，存在材料及層的許多合適之配置，諸如適用於形成UBM結構147的鉻/鉻銅合金/銅/金之配置、鈦/鈦鎢/銅之配置或銅/鎳/金之配置。可用於UBM結構147的任何合適之材料或材料層全部意欲包含於本揭露內容之範疇內。
UBM結構147可藉由以下來形成：在最頂部介電層(例如介電層142)上方及沿最頂部介電層中之開口的內部形成晶種層；在晶種層上方形成經圖案化罩幕層(例如光阻)；在經圖案化罩幕層之開口中及晶種層上方形成(例如藉由電鍍)一或多種導電材料；移除罩幕層；以及移除晶種層上不形成一或多種導電材料之部分。用於形成UBM結構147之其他方法為可能的且全部意欲包含於本揭露內容之範疇內。圖4中之UBM結構147之上部表面僅作為一實例說明為平面的，UBM結構147之上部表面可不為平面的。舉例而言，每一UBM結構147之部分(例如周邊部分)可形成於最頂部介電層(例如介電層142)上方，且每一UBM結構147之其他部分(例如中心部分)可沿由對應開口暴露之最頂 部介電層之側壁共形地形成，如本領域的技術人員應理解。
接下來，在圖5中，連接件155根據一些實施例形成於UBM結構147上方。連接件155可為焊球、金屬柱、受控塌陷晶片連接(C4)凸塊、微型凸塊、無電鍍鎳-無電鍍鈀-浸鍍金技術(electroless nickel-electroless palladium-immersion gold technique；ENEPIG)形成式凸塊、其組合(例如具有貼合至其之焊球的金屬柱)或類似者。連接件155可包含導電材料，諸如焊料、銅、鋁、金、鎳、銀、鈀、錫、類似者或其組合。在一些實施例中，作為實例，連接件155包括共晶材料，且可包括焊料凸塊或焊球。舉例而言，焊料材料可為鉛類焊料及無鉛焊料，諸如鉛類焊料Pb-Sn組合物；無鉛焊料包含InSb；錫、銀以及銅(tin,silver,and copper；SAC)組合物；以及具有公共熔點且在電應用中形成導電焊料連接的其他共晶材料。對於無鉛焊料，作為實例，可使用變化組合物之SAC焊料，諸如SAC 105(錫98.5%、銀1.0%、銅0.5%)、SAC 305以及SAC 405。諸如焊球之無鉛連接件亦可自SnCu化合物形成，而不使用銀(Ag)。替代地，無鉛焊料連接件可包含錫及銀(Sn-Ag)，而不使用銅。連接件155可形成柵格，諸如球柵陣列封裝(ball grid array；BGA)。在一些實施例中，可執行回焊製程，從而使連接件155呈一些實施例中的部分球面之形狀。可替代地，連接件155可包括其他形狀。舉例而言，連接件155亦可包括非球面導電連接件。
在一些實施例中，連接件155包括藉由濺鍍、印刷、電鍍、無電電鍍、CVD或類似者形成之金屬柱(諸如銅柱)，在所述金屬柱上具有或不具有焊料材料。金屬柱可不含焊料，且具有實質上 豎直之側壁或楔形側壁。
圖5進一步說明諸如積體被動裝置(integrated passive device；IPD)之電氣裝置171，其經由例如UBM結構147電性耦接至重佈線結構140。導電接合部173可形成於電氣裝置171與重佈線結構140之間。導電接合部173可由與連接件155相同之材料(例如焊料)形成。另外，底填充材料175可形成於電氣裝置171與重佈線結構140之間的間隙中。
接下來，在圖6中，半導體封裝體1100經翻轉，且連接件155經貼合至藉由框架157支撐之載帶159(例如切割帶)。接下來，藉由諸如蝕刻、磨削(grinding)或機械剝落(peel off)的合適之方法將載體101自重佈線結構110剝離。在黏著層(例如LTHC膜)形成於載體101與重佈線結構110之間的實施例中，載體101藉由將載體101暴露於雷射或UV光來剝離。雷射或UV光破壞黏著至載體101之黏著層的化學接合，且載體101可隨後容易地去黏著。
在將載體101剝離之後，開口116A形成於重佈線結構110之介電層111中以暴露重佈線結構110之導電特徵114(例如導電接墊)。另外，開口116B形成於直接位於晶粒120上方之區域300中以暴露晶粒120之背側上之虛設金屬層123的部分。如圖6中所說明，開口116B形成於含有虛設金屬圖案112的重佈線結構110之區域300中。在一些實施例中，開口116B形成於鄰近虛設金屬圖案112之間。開口116B亦可形成於重佈線結構110之周邊虛設金屬圖案112P(例如最遠離虛設金屬圖案之中心的虛設金屬圖案)與功能性導電特徵之間，其中所述功能性導電特徵指在半導體封 裝體之正常操作期間具有流動穿過之電流的導電線或導電通孔。換言之，功能性導電特徵為非虛設導電特徵。
為形成開口116(例如開口116A、開口116B)，可使用雷射鑽孔製程、蝕刻製程、類似製程或其組合。在一些實施例中，諸如電漿蝕刻製程的合適之蝕刻製程用以形成開口116。在一些實施例中，用以形成開口116之蝕刻製程(例如電漿蝕刻製程)對重佈線結構110之一或多種介電材料具有選擇性(例如具有較高蝕刻速率)。在一例示性實施例中，經圖案化罩幕層(未展示)形成於重佈線結構110上方，其中經圖案化罩幕層之圖案(例如開口)與開口116之位置相對應。選擇性蝕刻製程(例如電漿蝕刻製程)可隨後經執行以在實質上並不移除導電特徵(例如導電特徵114、導電特徵112以及導電特徵123)之情況下，移除藉由經圖案化罩幕層之圖案暴露的重佈線結構110之一或多種介電材料。在一些實施例中，導電特徵(例如導電特徵114、導電特徵112以及導電特徵123)充當用於選擇性蝕刻製程之蝕刻終止層。因此，在一些實施例中，儘管開口116A及開口116B使用單個罩幕層形成於相同蝕刻製程中，但開口116A及開口116B仍可以不同處理步驟(例如不同蝕刻製程)且/或使用多個罩幕層來形成。
如圖6中所說明，在形成開口116A之後，介電層111自虛設金屬圖案112側向偏移之部分(例如在區域300外)保留。相比之下，在開口116B之形成期間，移除直接位於虛設金屬圖案112上方(例如在區域300中)之介電層111，且因此，虛設金屬圖案112之上部表面及側壁藉由開口116B暴露。
如圖6中所說明，開口116B延伸穿過重佈線結構110且 穿過黏著膜118。在所說明實施例中，開口116B終止於虛設金屬層123在遠離晶粒120的表面處，且因此，開口116B並不延伸穿過虛設金屬層123。由於開口116B延伸穿過黏著膜118，故在形成開口116B之後，黏著膜118可稱為穿孔黏著膜。
在圖6之實例中，區域300之寬度W1小於晶粒120之寬度W2。換言之，區域300之邊界位於晶粒120之邊界(例如側壁)內。在一些實施例中，儘管區域300之邊界與晶粒120之邊界之間的偏移量P(例如距離)可介於約100微米與約200微米之間，但其他尺寸亦為可能的且充分意欲包含於本揭露內容之範疇內。在一些實施例中，偏移量P經選擇以調和用以形成開口116B之雷射鑽孔製程或蝕刻製程中的不準確度。因此，在圖6之所說明實例中，黏著配置膜118具有寬度P之部分經配置於重佈線結構110與虛設金屬層123之間。在其他實施例中，區域300之寬度W1等於晶粒120之寬度W2，且因此，區域300之邊界與晶粒120之邊界對準(例如P=0)。
接下來，在圖7中，焊錫膏(solder paste)164形成於開口116A中(見圖6)，且導熱材料166形成於開口116B中(見圖6)。在所說明實施例中，導熱材料166為金屬膏，其可包括諸如其中分散有金屬填充劑(例如銀粒子、銅粒子)之環氧樹脂的黏著材料，且因此，導熱材料166為導電的。黏著材料(例如環氧樹脂)亦可稱為用於金屬填充劑之溶劑。在一些實施例中，導熱材料166包括具有良好熱導率(例如大於15瓦每米-凱文(W/(m-k)))及高熱容量(例如約1焦耳每公克每攝氏度(J/(g℃))或大於1J/(g℃))的導電材料(例如銅、鋁、銀)。儘管導熱材 料166可藉由例如使金屬膏沈積於開口116B中來形成，但視導熱材料166之組合物(例如材料)而定，諸如CVD、濺鍍、電鍍、分配、噴射、打印、熱接合的其他合適之方法亦可用以形成導熱材料166。在一些實施例中，導熱材料166為具有良好熱導率(例如大於15W/(m-k))及高熱容量(例如約1J/(g℃)或大於1J/(g℃))的介電材料。
在本文中之各種實施例論述中，金屬膏用作導熱材料166，且因此，在理解除金屬膏以外，可使用任何合適之導熱材料而不背離本揭露內容之精神，導熱材料166亦可稱為金屬膏166。
在一些實施例中，金屬膏166具有高於黏著膜118及重佈線結構110之介電材料(例如聚合物)的熱導率。舉例而言，金屬膏可具有介於約15W/(m-k)與約30W/(m-k)之間的熱導率。相比之下，黏著膜118(例如DAF)及重佈線結構110之一或多種介電材料(例如聚合物)具有低得多之熱傳導率。舉例而言，用作黏著膜118的DAF之熱導率可為約0.2W/(m-k)。上文所揭露之熱導率範圍(例如約15W/(m-k)至約30W/(m-k))僅為非限制性實例，其他合適之熱導率範圍(見下文論述)亦為可能的且充分意欲包含於本揭露內容之範疇內。
在一些實施例中，金屬膏166不同於焊錫膏164，且包括銅膏、銀膏，或具有高於焊錫膏164之熱導率的其他金屬膏。舉例而言，銀膏具有介於約15W/(m-k)與約95W/(m-k)之間的熱導率，且焊錫膏具有介於約35W/(m-k)與約65W/(m-k)之間的熱導率。在其他實施例中，金屬膏166與焊錫膏164相同。亦即，焊錫膏用以填充開口116A及開口116B兩者。由於金屬膏166(例 如銀膏、銅膏或焊錫膏)具有高於重佈線結構110之黏著膜118及介電材料(例如聚合物)的熱導率，所以藉由用金屬膏166替換黏著膜118之部分且替換重佈線結構110之介電材料之部分，晶粒120之熱耗散可極大改進，從而改進所形成半導體封裝體之可靠性及效能。
接下來參考圖8，諸如包括記憶體裝置之封裝的半導體封裝體160(也稱為頂部封裝)貼合至圖7中所示之半導體封裝體1100(也稱為底部封裝)以形成圖8中之半導體封裝體1100，從而形成具有疊層封裝(PoP)結構之半導體封裝體1100。
如圖8中所說明，半導體封裝體160具有基底161及貼合至基底161之上部表面的一或多個半導體晶粒162(例如記憶體晶粒)。在一些實施例中，基底161包含矽、砷化鎵、絕緣體上矽(silicon on insulator；「SOI」)或其他類似材料。在一些實施例中，基底161為多層電路板。在一些實施例中，基底161包含雙順丁烯二醯亞胺三嗪(bismaleimide triazine；BT)樹脂、FR-4(由編織玻璃纖維布與耐火的環氧樹脂接合劑組成之複合材料)、陶瓷、玻璃、塑料、載帶、膜或其他支撐材料。基底161可包含形成於基底161中/上之導電特徵(例如導電線及通孔，未展示)。如圖8中所示，基底161具有形成於基底161之上部表面及下部表面上之導電接墊163，所述導電接墊163電性耦接至基底161之導電特徵。一或多個半導體晶粒162藉由例如接合線167電性耦接至導電接墊163。可包括環氧樹脂、有機聚合物、聚合物或類似者的模製材料165形成於基底161上方及半導體晶粒162周圍。在一些實施例中，如圖8中所說明，模製材料165可與基底161相接。
在一些實施例中，回焊製程經執行以使半導體封裝體160電性耦接及機械耦接至重佈線結構110。可藉由使半導體封裝體160之外部連接件與熔融焊錫膏164相接合而形成之導電接合部168形成於導電接墊163與導電特徵114之間。圖8說明導電接合部168之上部部分168U與導電接合部168之下部部分168L之間的介面168T，其中上部部分168U可與半導體封裝體160之外部連接件之至少部分相對應，且下部部分168L可與用以形成導電接合部168之焊錫膏(例如圖7中之焊錫膏164)之至少部分相對應。為簡單起見，介面168T可能未在後續圖式中說明。在一些實施例中，導電接合部168包括焊料區域、導電柱(例如具有位於銅柱之至少末端表面上之焊料區域的銅柱)或任何其他合適之導電接合部。
在一些實施例中，回焊製程亦固化(例如硬化)金屬膏166以使得金屬膏166轉變為經固化金屬膏166。如圖8中所說明，經固化金屬膏166填充開口116B(見圖6)且實體地接觸晶粒120之背側上的虛設金屬層132。在圖8中，作為實體地接觸虛設金屬層123之表面的經固化金屬膏166之最下部表面比重佈線結構110面向晶粒120之下部表面更接近於晶粒120。在一些實施例中，在回焊製程之後，經固化金屬膏166、虛設金屬圖案112以及虛設金屬層123連接至一起以形成電性隔離之導熱特徵，所述導熱特徵充當用於半導體封裝體1100之熱耗散結構，且因此亦可稱為熱耗散結構。在本發明之其他實施例中，如下文中將論述，可省略虛設金屬圖案112及/或虛設金屬層123，在此情況下，熱耗散結構可包含經固化金屬膏166、經固化金屬膏166及虛設金屬圖案 112，或經固化金屬膏166及虛設金屬層123。
在圖8之實例中，經固化金屬膏166之上部表面與重佈線結構110之最頂部介電層(例如介電層111)之上部表面111U齊平。如下文中將論述，經固化金屬膏166之上部表面亦可高於(例如更遠離晶粒120)或低於(例如更接近於晶粒120)上部表面111U。
儘管未展示，但仍可在形成導電接合部168之後執行切割製程以使半導體封裝體1100與形成於相同處理步驟中之其他鄰近半導體封裝體(未展示)分離，從而形成多個個別半導體封裝體1100。個別半導體封裝體1100可隨後自載帶159移除。
圖9至圖11根據本發明之各種實施例說明半導體封裝體的橫截面視圖。在圖9至圖11中，除非另外指明，否則圖1至圖8中之相同圖式元件符號指代相同部件。舉例而言，具有相同圖式元件符號之組件可由相同或類似材料形成，且可使用相同或類似形成方法來形成。為簡單起見，可不重複細節。
圖9說明類似於圖8之半導體封裝體1100但不具有晶粒120之背側上之虛設金屬層123的半導體封裝體1200之橫截面視圖。因此，在無虛設金屬層123之情況下相應地執行圖1至圖8中所示之處理。舉例而言，在開口116B(見圖6)之形成期間，因為省略虛設金屬層123，所以開口116B經形成以暴露晶粒120之背側的部分。如圖9中所說明，經固化金屬膏166實體地接觸晶粒120之背側。在圖9之實例中，經固化金屬膏166之上部表面與重佈線結構110之最頂部介電層(例如介電層111)之上部表面111U齊平。如下文中將論述，經固化金屬膏166之上部表面亦 可高於或低於上部表面111U。
圖10說明類似於圖8之半導體封裝體1100但不同之處在於重佈線結構110不具有虛設金屬圖案112的半導體封裝體1300之橫截面視圖。舉例而言，金屬圖案(虛設或非虛設)未形成於重佈線結構110直接位於晶粒120上方之區域(見例如圖6中之區域300)中。在所說明實施例中，重佈線結構110直接位於晶粒120上方之部分經移除以形成穿孔，且所述穿孔經填充有金屬膏166。如圖10中所說明，經固化金屬膏166實體地接觸晶粒120之背側上的虛設金屬層123。在圖10之實例中，經固化金屬膏166之上部表面與重佈線結構110之最頂部介電層(例如介電層111)之上部表面111U齊平。如下文中將論述，經固化金屬膏166之上部表面亦可高於或低於上部表面111U。
圖11說明類似於圖10之半導體封裝體1300但不具有晶粒120之背側上之虛設金屬層123的半導體封裝體1400之橫截面視圖。如圖11中所說明，經固化金屬膏166實體地接觸晶粒120之背側。在圖11之實例中，經固化金屬膏166之上部表面與重佈線結構110之最頂部介電層(例如介電層111)之上部表面111U齊平。如下文中將論述，經固化金屬膏166之上部表面亦可高於或低於上部表面111U。
所揭露實施例之改變為可能的且充分意欲包含於本揭露內容之範疇內。舉例而言，金屬膏166的量可經調節以使得在回焊製程之後，經固化金屬膏166之上部表面可與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U齊平(如圖6中所說明)、高於(例如更遠離晶粒120)或低於(例如更接近於 晶粒120)所述重佈線結構之所述頂部介電層之所述上部表面。另外，底填充材料可形成於半導體封裝體160與重佈線結構110之間的間隙中。底填充材料可為連續性底填充材料(見例如圖12A及圖12B中之底填充材料169)，或可包括底填充材料(見例如圖16A及圖16B中之底填充材料169)之離散(例如實體分離)部分。藉由將上文所述之特徵(例如經固化金屬膏166之上部表面的位置及底填充材料169之形狀)之不同變化與圖8至圖11中之所揭露實施例中之每一者進行組合，可衍生額外實施例。額外實施例中之一些(但並非所有)說明於圖12A、圖12B、圖13至圖15、圖16A、圖16B以及圖17至23中。
圖12A、圖12B以及圖13至圖15說明根據本發明之各種實施例之半導體封裝體的橫截面視圖。除非另外指明，否則圖12A、圖12B以及圖13至圖15中之相同圖式元件符號指代圖1至圖11中之相同部件。舉例而言，具有相同圖式元件符號之組件可由相同或類似材料形成，且可使用相同或類似形成方法來形成。為簡單起見，可不重複細節。
圖12A說明類似於圖11之半導體封裝體1400但其中金屬膏166的量(例如體積)經調節(例如增大)且其中底填充材料169形成於半導體封裝體160與重佈線結構110之間的間隙中的半導體封裝體1400A之橫截面視圖。圖12B為圖12A中之半導體封裝體1400A沿直線A-A之橫截面視圖，且圖12A為圖12B中之半導體封裝體1400A沿直線B-B之橫截面視圖。
如圖12A中所說明，經固化金屬膏166自晶粒120之背側連續地延伸至半導體封裝體160之基底161。換言之，經固化金屬 膏166實體地接觸晶粒120及基底161。圖12A亦說明半導體封裝體160與重佈線結構110之間的間隙中之底填充材料169。底填充材料169之實例材料包括(但不限於)環氧樹脂、聚合物以及其他合適之介電材料。底填充材料169可使用例如針或噴射分配器來分配於半導體封裝體160與重佈線結構110之間的間隙中。可執行固化製程以固化底填充材料169。經固化金屬膏166可用於控制導電接合部168之支座高度。
現參考圖12B，底填充材料169自一個導電接合部168連續地延伸至另一導電接合部168。另外，底填充材料169沿經固化金屬膏166之側壁166S連續地延伸。因此，底填充材料169為連續體積之介電材料。換言之，底填充材料169由一個連續介電材料(例如環氧樹脂、聚合物)組成。圖12A及圖12B中所說明之導電接合部分168的數目為說明性且非限制性的。其他數目亦為可能的且充分意欲包含於本揭露內容之範疇內。
圖13至圖15分別說明類似於圖12A之半導體封裝體1400A但其中金屬膏166的量(例如體積)經調節(例如減小)以使得經固化金屬膏166之上部表面166U低於(因而不接觸)半導體封裝體160之基底161的半導體封裝體1400B、半導體封裝體1400C以及半導體封裝體1400D之橫截面視圖。具體而言，在圖13中，經固化金屬膏166之上部表面166U位於基底161與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U之間。在圖14中，經固化金屬膏166之上部表面166U與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U齊平。在圖15中，經固化金屬膏166之上部表面166U比重佈線結構110 之頂部介電層(例如介電層111)之上部表面111U更接近於晶粒120。如圖15中所說明，底填充材料169直接位於晶粒120上方之部分比底填充材料169不直接位於晶粒120上方之部分(例如接觸導電接合部168之部分)更接近於晶粒120。
圖16A、圖16B以及圖17至圖19根據本發明之各種實施例說明半導體封裝體的橫截面視圖。除非另外指明，否則圖16A、圖16B以及圖17至圖19中之相同圖式元件符號指代圖1至圖11中之相同部件。舉例而言，具有相同圖式元件符號之組件可由相同或類似材料形成，且可使用相同或類似形成方法來形成。為簡單起見，可不重複細節。
圖16A說明類似於圖12A之半導體封裝體1400A但其中底填充材料169包括形成於導電接合部168周圍之離散(例如實體分離)部分的半導體封裝體1400E之橫截面視圖。圖16B為圖16A中之半導體封裝體1400E沿直線C-C之橫截面視圖，且圖16A為圖16B中之半導體封裝體1400E沿直線D-D之橫截面視圖。
如圖16A中所說明，經固化金屬膏166自晶粒120之背側連續地延伸至半導體封裝體160之基底161。換言之，經固化金屬膏166實體地接觸晶粒120及基底161。圖16A亦說明半導體封裝體160與重佈線結構110之間的間隙中之底填充材料169。底填充材料169可藉由在用以將半導體封裝體160之外部連接件接合至重佈線結構110之導電特徵114的回焊製程之前，將環氧樹脂焊劑塗佈於半導體封裝體160之外部連接件上來形成。舉例而言，半導體封裝體160之外部連接件可在回焊製程之前浸漬至環氧樹脂焊劑中。在回焊製程之後，環氧樹脂焊劑經固化且形成底填充 材料169彼此實體分離之個別部分，如圖16B中所說明。
現參考圖16B，底填充材料169之每一個別部分包圍相應導電接合部168，且與底填充材料169圍繞另一導電接合部168之另一部分實體分離。圖16A及圖16B中所說明之導電接合部168的數目及底填充材料169之獨立部分的數目為說明性且非限制性的。其他數目亦為可能的且充分意欲包含於本揭露內容之範疇內。
圖17至圖19分別說明類似於圖16A之半導體封裝體1400E但其中金屬膏166的量(例如體積)經調節(例如減小)以使得經固化金屬膏166之上部表面166U低於(因而不接觸)半導體封裝體160之基底161的半導體封裝體1400F、半導體封裝體1400G以及半導體封裝體1400H之橫截面視圖。具體而言，在圖17中，經固化金屬膏166之上部表面166U位於基底161與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U之間。在圖18中，經固化金屬膏166之上部表面166U與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U齊平。在圖19中，經固化金屬膏166之上部表面166U比重佈線結構110之頂部介電層(例如介電層111)之上部表面111U更接近於晶粒120。如圖19中所說明，經固化金屬膏166與基底161之間的距離D1大於基底161與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U之間的距離D2。
圖20至圖23根據本發明之各種實施例說明半導體封裝體的橫截面視圖。在圖20至圖23中，除非另外指明，否則相同圖式元件符號指代圖1至圖11中之相同部件。舉例而言，具有相同圖式元件符號之組件可由相同或類似材料形成，且可使用相同或 類似形成方法來形成。為簡單起見，可不重複細節。
圖20說明類似於圖8之半導體封裝體1100但其中金屬膏166的量(例如體積)經調節(例如增大)且其中底填充材料169形成於半導體封裝體160與重佈線結構110之間的間隙中的半導體封裝體1100A之橫截面視圖。
如圖20中所說明，經固化金屬膏166自晶粒120之背側上之虛設金屬層123連續地延伸至半導體封裝體160之基底161。換言之，經固化金屬膏166實體地接觸虛設金屬層123及基底161。圖20亦說明半導體封裝體160與重佈線結構110之間的間隙中之底填充材料169。底填充材料169之實例材料包括(但不限於)環氧樹脂、聚合物以及其他合適之非導電材料。底填充材料169可使用例如針或噴射分配器來分配於半導體封裝體160與重佈線結構110之間的間隙中。可執行固化製程以固化底填充材料169。在一些實施例中，底填充材料169自一個導電接合部168連續地延伸至另一導電接合部168。另外，類似於圖12B，底填充材料169沿經固化金屬膏166之側壁166S連續地延伸。因此，底填充材料169為連續的。換言之，底填充材料169由連續介電材料(例如環氧樹脂、聚合物)組成。
圖21至圖23分別說明類似於圖20之半導體封裝體1100A但其中金屬膏166的量(例如體積)經調節(例如減小)以使得經固化金屬膏166之上部表面166U低於(因而不接觸)半導體封裝體160之基底161的半導體封裝體1100B、半導體封裝體1100C以及半導體封裝體1100D之橫截面視圖。具體而言，在圖21中，經固化金屬膏166之上部表面166U位於基底161與重佈線結構 110之頂部介電層(例如介電層111)之上部表面111U之間。在圖22中，經固化金屬膏166之上部表面166U與重佈線結構110之頂部介電層(例如介電層111)之上部表面111U齊平。在圖23中，經固化金屬膏166之上部表面166U比重佈線結構110之頂部介電層(例如介電層111)之上部表面111U更接近於晶粒120。如圖23中所說明，底填充材料169直接位於晶粒120上方之部分比底填充材料169不直接位於晶粒120上方之部分(例如接觸導電接合部168之部分)更接近於晶粒120。
上文所說明之各種實施例是出於說明之目的且非限制性的。所揭露實施例之額外改變為可能的且充分意欲包含於本揭露內容之範疇內。
實施例可達成優勢。藉由用具有較高熱導率之金屬膏替換具有低熱導率之重佈線結構110之一或多種介電材料之部分及黏著膜118之部分，改進了所形成半導體封裝體之熱耗散的效率。經改進之熱耗散的效率改進了半導體封裝體之可靠性及壽命且降低由過度加熱引起之損壞。因為半導體晶粒可在產生較大熱量之較高時脈頻率(較高效能)下操作，所以經改進之熱耗散的效率亦允許較高效能及/或較高積體密度。另外，較多電晶體可經整合於半導體封裝體之晶粒中，從而允許在先前不具有當前揭露之結構的情況下由於熱耗散限制而不可能的較高積體密度及降低之製造成本。
圖24根據一些實施例說明構造半導體裝置之方法3000之流程圖。應理解，圖24中所示之實施例方法僅為許多可能實施例方法之實例。於本領域具通常知識者將認識到許多改變、替代物 以及修改。舉例而言，可添加、移除、替換、重新配置以及重複如圖24中所示之各種步驟。
參考圖24，在步驟3010處，晶粒經貼合至第一重佈線結構之第一側。在步驟3020處，導電柱形成於第一重佈線結構之第一側上。在步驟3030處，模製材料形成於晶粒與導電柱之間。在步驟3040處，第二重佈線結構形成於晶粒、導電柱以及模製材料上方。在步驟3050處，第一開口形成於第一重佈線結構中，所述第一開口位於晶粒之側向範圍內，所述第一開口延伸穿過第一重佈線結構。在步驟3060處，金屬膏形成於第一開口中，金屬膏經電性隔離。
在一實施例中，半導體結構包括：晶粒，嵌入於模製材料中，所述晶粒於第一側上具有晶粒連接件；第一重佈線結構，位於晶粒之第一側，所述第一重佈線結構經由晶粒連接件電性耦接至晶粒；第二重佈線結構，位於與晶粒的第一側相對的第二側；以及導熱材料，位於第二重佈線結構中，晶粒插入於導熱材料與第一重佈線結構之間，導熱材料延伸穿過第二重佈線結構，且導熱材料經電性隔離。在一實施例中，導熱材料包括其中分散有金屬粒子之黏著材料。在一實施例中，半導體結構進一步包含延伸穿過模製材料之金屬柱，所述金屬柱使第一重佈線結構電性耦接至第二重佈線結構。在一實施例中，導熱材料實體地接觸晶粒之第二側。在一實施例中，第二重佈線結構進一步包括虛設金屬圖案，其中所述虛設金屬圖案接觸導熱材料。在一實施例中，半導體結構進一步包含第二重佈線結構與晶粒之間的介電膜，所述介電膜與晶粒相接，其中所述導熱材料延伸穿過介電膜。在一實施 例中，半導體結構進一步包含配置於晶粒之第二側上之虛設金屬層，所述虛設金屬層經電性隔離。在一實施例中，導熱材料實體地接觸虛設金屬層。在一實施例中，第二重佈線結構進一步包含虛設金屬圖案，其中所述導熱材料配置於虛設金屬圖案中的個別虛設金屬圖案之間。在一實施例中，半導體結構進一步包含位於第二重佈線結構與虛設金屬層之間的介電膜，所述介電膜與虛設金屬層具有相同寬度，其中導熱材料延伸穿過介電膜。在一實施例中，導熱材料在遠離晶粒之表面與第二重佈線結構在遠離晶粒之表面齊平。在一實施例中，導熱材料在遠離晶粒之表面比第二重佈線結構在遠離晶粒之表面更接近於晶粒。在一實施例中，導熱材料在遠離晶粒之表面比第二重佈線結構在遠離晶粒之表面更遠離晶粒。
在一實施例中，半導體結構包含：第一重佈線結構；第二重佈線結構；晶粒，插入於第一重佈線結構與第二重佈線結構之間，晶粒之前側面向第一重佈線結構；模製材料，圍繞晶粒且插入於第一重佈線結構與第二重佈線結構之間；熱耗散結構，至少部分地嵌入於第二重佈線結構中，其中所述熱耗散結構經電性隔離且自第二重佈線結構之第一側延伸至第二重佈線結構之相對第二側，且其中晶粒位於熱耗散結構與第一重佈線結構之間；半導體封裝體，電性耦接至第二重佈線結構。在一實施例中，熱耗散結構包含：第二重佈線結構之虛設金屬圖案；以及金屬膏，至少部分地嵌入於第二重佈線結構中，所述金屬膏接觸虛設金屬圖案。在一實施例中，半導體結構進一步包含第二重佈線結構與晶粒之間的介電膜，其中所述介電膜具有與晶粒相同之寬度，且其 中熱耗散結構自介電膜之第一側延伸至介電膜之相對第二側。在一實施例中，熱耗散結構面向晶粒之第一表面比第二重佈線結構面向晶粒之第一側更接近於晶粒。
在一實施例中，形成半導體結構的方法包含：將晶粒貼合至第一重佈線結構之第一側；在第一重佈線結構之第一側上形成導電柱；在晶粒與導電柱之間形成模製材料；在晶粒、導電柱以及模製材料上方形成第二重佈線結構；在第一重佈線結構中形成第一開口，所述第一開口位於晶粒之側向範圍內，第一開口延伸穿過第一重佈線結構；以及在第一開口中形成金屬膏，所述金屬膏經電性隔離。在一實施例中，方法進一步包含：在第一重佈線結構中形成第二開口以暴露第一重佈線結構之導電特徵；將半導體封裝體之連接件貼合至第一重佈線結構之經暴露的導電特徵；以及執行回焊製程，所述回焊製程固化金屬膏且使半導體封裝體之連接件與第一重佈線結構之經暴露的導電特徵相接合。在一實施例中，方法進一步包含在貼合晶粒之前，在晶粒之背側上形成虛設金屬層，所述虛設金屬層經電性隔離。
前文概述若干實施例之特徵，以使得本領域的技術人員可較佳地理解本揭露內容之態樣。本領域的技術人員應瞭解，其可易於使用本發明作為用於設計或修改用於實現本文中所引入之實施例的相同目的及/或達成相同優勢之其他過程及結構的基礎。本領域的技術人員亦應認識到，這類等效構造並不脫離本揭露內容之精神及範疇，且其可在不脫離本揭露內容之精神及範疇的情況下在本文中進行各種改變、替代以及更改。
1100‧‧‧半導體封裝體
110、140‧‧‧重佈線結構
111、113‧‧‧介電層
114‧‧‧導電特徵
118‧‧‧黏著膜
119‧‧‧導電柱
120‧‧‧晶粒
123‧‧‧虛設金屬層
130‧‧‧模製材料
155‧‧‧連接件
157‧‧‧框架
159‧‧‧載帶
164‧‧‧焊錫膏
166‧‧‧導熱材料/金屬膏

Claims (10)

  1. 一種半導體結構，包括：晶粒，嵌入於模製材料中，所述晶粒在第一側上具有晶粒連接件；第一重佈線結構，位於所述晶粒之所述第一側，所述第一重佈線結構經由所述晶粒連接件電性耦接至所述晶粒；第二重佈線結構，位於與所述第一側相對的所述晶粒之第二側，其中所述第二重佈線結構包括虛設金屬圖案；以及導熱材料，位於所述第二重佈線結構中，所述晶粒插入於所述導熱材料與所述第一重佈線結構之間，所述導熱材料延伸穿過所述第二重佈線結構，所述導熱材料接觸所述虛設金屬圖案，所述虛設金屬圖案的材料不同於所述導熱材料的材料，且所述導熱材料經電性隔離。
  2. 如申請專利範圍第1項所述之半導體結構，其中所述導熱材料包括其中分散有金屬粒子的黏著材料。
  3. 如申請專利範圍第1項所述之半導體結構，其中所述導熱材料實體地接觸所述晶粒的所述第二側。
  4. 如申請專利範圍第3項所述之半導體結構，更包括所述第二重佈線結構與所述晶粒之間的介電膜，所述介電膜與所述晶粒相接，其中所述導熱材料延伸穿過所述介電膜。
  5. 如申請專利範圍第1項所述之半導體結構，更包括配置於所述晶粒之所述第二側上的虛設金屬層，所述虛設金屬層經電性隔離。
  6. 如申請專利範圍第5項所述之半導體結構，其中所述導 熱材料實體地接觸所述虛設金屬層。
  7. 一種半導體結構，包括：第一重佈線結構；第二重佈線結構；晶粒，插入於所述第一重佈線結構與所述第二重佈線結構之間，其中所述晶粒之前側面向所述第一重佈線結構；模製材料，圍繞所述晶粒且插入於所述第一重佈線結構與所述第二重佈線結構之間；熱耗散結構，至少部分地嵌入於所述第二重佈線結構中，其中所述熱耗散結構經電性隔離且自所述第二重佈線結構之第一側延伸至所述第二重佈線結構之相對第二側，所述熱耗散結構包括虛設金屬圖案以及至少部分地嵌入於所述第二重佈線結構中的金屬膏，所述金屬膏接觸所述虛設金屬圖案，且其中所述晶粒在所述熱耗散結構與所述第一重佈線結構之間；以及半導體封裝體，電性耦接至所述第二重佈線結構。
  8. 如申請專利範圍第7項所述之半導體結構，更包括所述第二重佈線結構與所述晶粒之間的介電膜，其中所述介電膜具有與所述晶粒相同的寬度，且其中所述熱耗散結構自所述介電膜之第一側延伸至所述介電膜之相對第二側。
  9. 一種形成半導體結構的方法，包括：將晶粒貼合至第一重佈線結構的第一側；在所述第一重佈線結構之所述第一側上形成導電柱；在所述晶粒與所述導電柱之間形成模製材料；在所述晶粒、所述導電柱以及所述模製材料上方形成第二重 佈線結構；在所述第一重佈線結構中形成第一開口，所述第一開口在所述晶粒之側向範圍內，所述第一開口延伸穿過所述第一重佈線結構；以及在所述第一開口中形成金屬膏，所述金屬膏經電性隔離。
  10. 如申請專利範圍第9項所述之方法，更包括：在所述第一重佈線結構中形成第二開口以暴露所述第一重佈線結構的導電特徵；將半導體封裝體之連接件貼合至所述第一重佈線結構之經暴露的所述導電特徵；以及執行回焊製程，所述回焊製程固化所述金屬膏且使所述半導體封裝體之所述連接件與所述第一重佈線結構之經暴露的所述導電特徵相接合。
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Families Citing this family (19)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10460987B2 (en) * 2017-05-09 2019-10-29 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor package device with integrated antenna and manufacturing method thereof
US10840227B2 (en) * 2017-11-02 2020-11-17 Taiwan Semiconductor Manufacturing Company, Ltd. Under-bump-metallization structure and redistribution layer design for integrated fan-out package with integrated passive device
US10566261B2 (en) * 2017-11-15 2020-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages with embedded heat dissipation structure
KR102071457B1 (ko) * 2018-03-13 2020-01-30 삼성전자주식회사 팬-아웃 반도체 패키지
US10510595B2 (en) * 2018-04-30 2019-12-17 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages and methods of forming the same
US20200161206A1 (en) * 2018-11-20 2020-05-21 Advanced Semiconductor Engineering, Inc. Semiconductor package structure and semiconductor manufacturing process
US11728238B2 (en) * 2019-07-29 2023-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor package with heat dissipation films and manufacturing method thereof
CN110544679B (zh) * 2019-08-30 2021-05-18 颀中科技（苏州）有限公司 芯片重布线结构及其制备方法
CN110707056B (zh) * 2019-09-27 2021-06-15 南京矽力微电子技术有限公司 封装组件及其制造方法、以及降压型变换器的封装组件
KR20210095442A (ko) 2020-01-23 2021-08-02 삼성전자주식회사 반도체 패키지 및 그 제조 방법
US20210280507A1 (en) * 2020-03-05 2021-09-09 Qualcomm Incorporated Package comprising dummy interconnects
KR102635846B1 (ko) * 2020-04-03 2024-02-13 주식회사 네패스 반도체 패키지 및 그 제조방법
US11948891B2 (en) 2020-04-03 2024-04-02 Nepes Co., Ltd. Semiconductor package and manufacturing method thereof
US11576262B2 (en) * 2020-04-27 2023-02-07 Apple Inc. Fabric-mounted components
KR20210146608A (ko) * 2020-05-27 2021-12-06 삼성전자주식회사 반도체 패키지
US11527518B2 (en) * 2020-07-27 2022-12-13 Taiwan Semiconductor Manufacturing Co., Ltd. Heat dissipation in semiconductor packages and methods of forming same
KR20220047066A (ko) 2020-10-08 2022-04-15 삼성전자주식회사 반도체 패키지 장치
TWI768593B (zh) * 2020-12-15 2022-06-21 華泰電子股份有限公司 半導體封裝件及其製法
US20220199593A1 (en) * 2020-12-22 2022-06-23 Mediatek Inc. Semiconductor device with dummy thermal features on interposer

Citations (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186449A (ja) * 1997-12-25 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
CN103219316A (zh) * 2012-01-24 2013-07-24 台湾积体电路制造股份有限公司 封装组件及其形成方法
TWI463573B (zh) * 2007-12-26 2014-12-01 Stats Chippac Ltd 半導體裝置及使用犧牲載體形成該裝置之方法
US9245770B2 (en) * 2012-12-20 2016-01-26 Stats Chippac, Ltd. Semiconductor device and method of simultaneous molding and thermalcompression bonding
KR101594492B1 (ko) * 2014-06-02 2016-02-16 앰코 테크놀로지 코리아 주식회사 반도체 패키지 구조물 및 그 제작 방법
US9379076B2 (en) * 2014-10-01 2016-06-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US9502380B2 (en) * 2012-09-28 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional integrated circuits stacking approach
US9543373B2 (en) * 2013-10-23 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof

Family Cites Families (45)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US170341A (en) * 1875-11-23 Improvement in watch-case springs
US14292A (en) * 1856-02-19 Improvement in temples for looms
KR20110085481A (ko) * 2010-01-20 2011-07-27 삼성전자주식회사 적층 반도체 패키지
US9048233B2 (en) 2010-05-26 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Package systems having interposers
US9064879B2 (en) 2010-10-14 2015-06-23 Taiwan Semiconductor Manufacturing Company, Ltd. Packaging methods and structures using a die attach film
JP5316602B2 (ja) 2010-12-16 2013-10-16 株式会社日本自動車部品総合研究所 熱拡散部材の接合構造、発熱体の冷却構造、及び熱拡散部材の接合方法
US8797057B2 (en) 2011-02-11 2014-08-05 Taiwan Semiconductor Manufacturing Company, Ltd. Testing of semiconductor chips with microbumps
US9000584B2 (en) 2011-12-28 2015-04-07 Taiwan Semiconductor Manufacturing Company, Ltd. Packaged semiconductor device with a molding compound and a method of forming the same
US9111949B2 (en) 2012-04-09 2015-08-18 Taiwan Semiconductor Manufacturing Company, Ltd. Methods and apparatus of wafer level package for heterogeneous integration technology
JP2014056992A (ja) * 2012-09-13 2014-03-27 Sumitomo Bakelite Co Ltd 電子機器および電子機器の製造方法
US9735087B2 (en) * 2012-09-20 2017-08-15 Taiwan Semiconductor Manufacturing Company, Ltd. Wafer level embedded heat spreader
US8889484B2 (en) 2012-10-02 2014-11-18 Taiwan Semiconductor Manufacturing Company, Ltd. Apparatus and method for a component package
US9263511B2 (en) 2013-02-11 2016-02-16 Taiwan Semiconductor Manufacturing Co., Ltd. Package with metal-insulator-metal capacitor and method of manufacturing the same
US9048222B2 (en) 2013-03-06 2015-06-02 Taiwan Semiconductor Manufacturing Company, Ltd. Method of fabricating interconnect structure for package-on-package devices
KR101445964B1 (ko) * 2013-03-11 2014-09-29 앰코 테크놀로지 코리아 주식회사 반도체 디바이스 및 그 제조 방법
US9368460B2 (en) 2013-03-15 2016-06-14 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out interconnect structure and method for forming same
US10014292B2 (en) * 2015-03-09 2018-07-03 Monolithic 3D Inc. 3D semiconductor device and structure
US9281254B2 (en) 2014-02-13 2016-03-08 Taiwan Semiconductor Manufacturing Company, Ltd. Methods of forming integrated circuit package
US9224709B2 (en) 2014-02-13 2015-12-29 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor device including an embedded surface mount device and method of forming the same
US9412714B2 (en) * 2014-05-30 2016-08-09 Invensas Corporation Wire bond support structure and microelectronic package including wire bonds therefrom
US9496189B2 (en) 2014-06-13 2016-11-15 Taiwan Semiconductor Manufacturing Company, Ltd. Stacked semiconductor devices and methods of forming same
US9543170B2 (en) 2014-08-22 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages and methods of forming the same
US9941207B2 (en) 2014-10-24 2018-04-10 STATS ChipPAC Pte. Ltd. Semiconductor device and method of fabricating 3D package with short cycle time and high yield
TWI571983B (zh) 2014-11-25 2017-02-21 矽品精密工業股份有限公司 電子封裝件及其製法
US9633934B2 (en) * 2014-11-26 2017-04-25 Taiwan Semiconductor Manufacturing Company, Ltd. Semicondutor device and method of manufacture
US9812337B2 (en) * 2014-12-03 2017-11-07 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated circuit package pad and methods of forming
US20160211221A1 (en) * 2015-01-16 2016-07-21 Amkor Technology, Inc. Semiconductor device and manufacturing method thereof
US9786623B2 (en) * 2015-03-17 2017-10-10 STATS ChipPAC Pte. Ltd. Semiconductor device and method of forming PoP semiconductor device with RDL over top package
US9613931B2 (en) * 2015-04-30 2017-04-04 Taiwan Semiconductor Manufacturing Company, Ltd. Fan-out stacked system in package (SIP) having dummy dies and methods of making the same
US10079192B2 (en) * 2015-05-05 2018-09-18 Mediatek Inc. Semiconductor chip package assembly with improved heat dissipation performance
KR101923659B1 (ko) * 2015-08-31 2019-02-22 삼성전자주식회사 반도체 패키지 구조체, 및 그 제조 방법
US9620482B1 (en) * 2015-10-19 2017-04-11 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
KR20170067426A (ko) 2015-12-08 2017-06-16 앰코 테크놀로지 코리아 주식회사 반도체 패키지의 제조 방법 및 이를 이용한 반도체 패키지
KR102487563B1 (ko) * 2015-12-31 2023-01-13 삼성전자주식회사 반도체 패키지 및 그 제조방법
US10204883B2 (en) * 2016-02-02 2019-02-12 Taiwan Semidonductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof
US10163800B2 (en) * 2016-07-08 2018-12-25 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure with dummy feature in passivation layer
US10332843B2 (en) * 2016-08-19 2019-06-25 Samsung Electro-Mechanics Co., Ltd. Fan-out semiconductor package
US10276548B2 (en) * 2016-09-14 2019-04-30 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor packages having dummy connectors and methods of forming same
US10163802B2 (en) * 2016-11-29 2018-12-25 Taiwan Semicondcutor Manufacturing Company, Ltd. Fan-out package having a main die and a dummy die, and method of forming
US10170341B1 (en) * 2017-06-30 2019-01-01 Taiwan Semiconductor Manufacturing Company, Ltd. Release film as isolation film in package
US10224301B2 (en) * 2017-07-05 2019-03-05 Advanced Semiconductor Engineering, Inc. Semiconductor package device and method of manufacturing the same
US10566261B2 (en) * 2017-11-15 2020-02-18 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages with embedded heat dissipation structure
US10504858B2 (en) * 2018-04-27 2019-12-10 Taiwan Semiconductor Manufacturing Co., Ltd. Package structure and method of fabricating the same
US11309294B2 (en) * 2018-09-05 2022-04-19 Taiwan Semiconductor Manufacturing Company, Ltd. Integrated fan-out packages and methods of forming the same
US10658348B2 (en) * 2018-09-27 2020-05-19 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor devices having a plurality of first and second conductive strips

Patent Citations (9)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JPH11186449A (ja) * 1997-12-25 1999-07-09 Mitsubishi Electric Corp 半導体装置およびその製造方法
TWI463573B (zh) * 2007-12-26 2014-12-01 Stats Chippac Ltd 半導體裝置及使用犧牲載體形成該裝置之方法
CN103219316A (zh) * 2012-01-24 2013-07-24 台湾积体电路制造股份有限公司 封装组件及其形成方法
US9502380B2 (en) * 2012-09-28 2016-11-22 Taiwan Semiconductor Manufacturing Co., Ltd. Three dimensional integrated circuits stacking approach
US9245770B2 (en) * 2012-12-20 2016-01-26 Stats Chippac, Ltd. Semiconductor device and method of simultaneous molding and thermalcompression bonding
US9543373B2 (en) * 2013-10-23 2017-01-10 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor structure and manufacturing method thereof
US20170098640A1 (en) * 2013-10-23 2017-04-06 Taiwan Semiconductor Manufacturing Company, Ltd. Semiconductor Structure and Manufacturing Method Thereof
KR101594492B1 (ko) * 2014-06-02 2016-02-16 앰코 테크놀로지 코리아 주식회사 반도체 패키지 구조물 및 그 제작 방법
US9379076B2 (en) * 2014-10-01 2016-06-28 Taiwan Semiconductor Manufacturing Company Ltd. Semiconductor device and manufacturing method thereof

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