TWI679696B - 基板處理裝置與基板處理方法 - Google Patents
基板處理裝置與基板處理方法 Download PDFInfo
- Publication number
- TWI679696B TWI679696B TW107137102A TW107137102A TWI679696B TW I679696 B TWI679696 B TW I679696B TW 107137102 A TW107137102 A TW 107137102A TW 107137102 A TW107137102 A TW 107137102A TW I679696 B TWI679696 B TW I679696B
- Authority
- TW
- Taiwan
- Prior art keywords
- processing
- concentration
- substrate
- liquid
- predetermined
- Prior art date
Links
- 238000012545 processing Methods 0.000 title claims abstract description 361
- 239000000758 substrate Substances 0.000 title claims abstract description 141
- 238000003672 processing method Methods 0.000 title claims description 10
- 239000007788 liquid Substances 0.000 claims abstract description 156
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 90
- 238000000034 method Methods 0.000 claims abstract description 49
- 239000000126 substance Substances 0.000 claims abstract description 18
- 238000001514 detection method Methods 0.000 claims abstract description 8
- 230000001934 delay Effects 0.000 claims abstract description 7
- 239000002253 acid Substances 0.000 claims description 99
- 239000007864 aqueous solution Substances 0.000 claims description 77
- 239000000243 solution Substances 0.000 claims description 36
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 30
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims description 22
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims description 11
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims description 10
- 229910017604 nitric acid Inorganic materials 0.000 claims description 10
- 230000001629 suppression Effects 0.000 claims description 10
- 238000005530 etching Methods 0.000 description 15
- 238000010586 diagram Methods 0.000 description 14
- 230000007246 mechanism Effects 0.000 description 9
- 238000012546 transfer Methods 0.000 description 8
- 238000004140 cleaning Methods 0.000 description 5
- 239000003814 drug Substances 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000470 constituent Substances 0.000 description 4
- 238000001704 evaporation Methods 0.000 description 4
- 230000008020 evaporation Effects 0.000 description 4
- 230000005856 abnormality Effects 0.000 description 3
- 238000002474 experimental method Methods 0.000 description 3
- 239000000463 material Substances 0.000 description 3
- 238000005259 measurement Methods 0.000 description 3
- 238000000354 decomposition reaction Methods 0.000 description 2
- 230000007423 decrease Effects 0.000 description 2
- 229940079593 drug Drugs 0.000 description 2
- 238000004519 manufacturing process Methods 0.000 description 2
- 238000003860 storage Methods 0.000 description 2
- 230000009469 supplementation Effects 0.000 description 2
- 230000007723 transport mechanism Effects 0.000 description 2
- 230000015556 catabolic process Effects 0.000 description 1
- 230000007797 corrosion Effects 0.000 description 1
- 238000005260 corrosion Methods 0.000 description 1
- 239000013078 crystal Substances 0.000 description 1
- 238000006731 degradation reaction Methods 0.000 description 1
- 230000009977 dual effect Effects 0.000 description 1
- 230000006870 function Effects 0.000 description 1
- 238000000227 grinding Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910021645 metal ion Inorganic materials 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 230000002093 peripheral effect Effects 0.000 description 1
- 238000005498 polishing Methods 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 238000003303 reheating Methods 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
- 238000011144 upstream manufacturing Methods 0.000 description 1
- 238000005406 washing Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
- H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B08—CLEANING
- B08B—CLEANING IN GENERAL; PREVENTION OF FOULING IN GENERAL
- B08B3/00—Cleaning by methods involving the use or presence of liquid or steam
- B08B3/04—Cleaning involving contact with liquid
- B08B3/048—Overflow-type cleaning, e.g. tanks in which the liquid flows over the tank in which the articles are placed
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
- H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
- H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67155—Apparatus for manufacturing or treating in a plurality of work-stations
- H01L21/67161—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers
- H01L21/67173—Apparatus for manufacturing or treating in a plurality of work-stations characterized by the layout of the process chambers in-line arrangement
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Cleaning Or Drying Semiconductors (AREA)
- Weting (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-206295 | 2017-10-25 | ||
| JP2017206295A JP7004144B2 (ja) | 2017-10-25 | 2017-10-25 | 基板処理装置および基板処理方法 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201923878A TW201923878A (zh) | 2019-06-16 |
| TWI679696B true TWI679696B (zh) | 2019-12-11 |
Family
ID=66246493
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107137102A TWI679696B (zh) | 2017-10-25 | 2018-10-22 | 基板處理裝置與基板處理方法 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP7004144B2 (ko) |
| KR (1) | KR102323310B1 (ko) |
| CN (1) | CN111263975A (ko) |
| TW (1) | TWI679696B (ko) |
| WO (1) | WO2019082662A1 (ko) |
Families Citing this family (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2023135013A (ja) | 2022-03-15 | 2023-09-28 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理方法及び基板処理装置 |
| CN114999899A (zh) * | 2022-08-08 | 2022-09-02 | 广州粤芯半导体技术有限公司 | 一种晶圆清洗方法 |
Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008084954A (ja) * | 2006-09-26 | 2008-04-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置のスケジュール作成方法及びそのプログラム |
| TWI539516B (zh) * | 2013-09-30 | 2016-06-21 | Shibaura Mechatronics Corp | 基板處理方法及基板處理裝置 |
| TWI579037B (zh) * | 2013-11-13 | 2017-04-21 | Tokyo Electron Ltd | Substrate liquid processing device and substrate liquid treatment method |
Family Cites Families (20)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH10261613A (ja) * | 1997-03-19 | 1998-09-29 | Dainippon Screen Mfg Co Ltd | 基板処理装置 |
| JP3254519B2 (ja) * | 1997-11-19 | 2002-02-12 | 東京エレクトロン株式会社 | 洗浄処理方法及び洗浄処理システム |
| JP2000164550A (ja) | 1998-11-27 | 2000-06-16 | Dainippon Screen Mfg Co Ltd | 基板処理装置および基板処理方法 |
| US6399517B2 (en) * | 1999-03-30 | 2002-06-04 | Tokyo Electron Limited | Etching method and etching apparatus |
| JP2002328396A (ja) * | 2001-04-26 | 2002-11-15 | Nec Corp | 液晶表示装置及びその製造方法 |
| JP2003086563A (ja) * | 2001-09-11 | 2003-03-20 | Dainippon Screen Mfg Co Ltd | 基板処理装置のスケジュール作成方法及びそのプログラム |
| JP4033729B2 (ja) * | 2001-09-19 | 2008-01-16 | 東京エレクトロン株式会社 | 塗布膜形成の処理パラメータの決定方法及び塗布膜形成装置 |
| JP2004111668A (ja) * | 2002-09-19 | 2004-04-08 | Citizen Watch Co Ltd | 基板処理装置及び基板処理方法 |
| US20040140365A1 (en) * | 2002-12-26 | 2004-07-22 | Dainippon Screen Mfg. Co., Ltd. | Substrate treating apparatus |
| JP4393260B2 (ja) * | 2004-04-20 | 2010-01-06 | 株式会社東芝 | エッチング液管理方法 |
| JP2006186065A (ja) * | 2004-12-27 | 2006-07-13 | Matsushita Electric Ind Co Ltd | 電子デバイスの洗浄装置及び電子デバイスの製造方法 |
| JP2008028280A (ja) * | 2006-07-25 | 2008-02-07 | Dainippon Screen Mfg Co Ltd | 基板処理装置及び処理液置換方法 |
| JP5046683B2 (ja) * | 2007-02-28 | 2012-10-10 | 大日本スクリーン製造株式会社 | 基板処理装置のスケジュール作成方法及びそのプログラム |
| KR20090038220A (ko) * | 2007-10-15 | 2009-04-20 | 세메스 주식회사 | 반도체 제조 설비의 약액 교환 방법 |
| KR100901460B1 (ko) * | 2008-01-10 | 2009-06-08 | 세메스 주식회사 | 처리액 제공 장치 및 이를 이용한 처리액 교체 방법 |
| JP2010278386A (ja) | 2009-06-01 | 2010-12-09 | Renesas Electronics Corp | 半導体装置の製造方法 |
| JP6074338B2 (ja) | 2013-08-27 | 2017-02-01 | 東京エレクトロン株式会社 | 液処理装置、濃度補正方法及び記憶媒体 |
| CN104862703A (zh) | 2014-06-16 | 2015-08-26 | 叶涛 | 一种高质高效且安全的印刷线路板碱性氯化铜蚀刻液 |
| JP2016111265A (ja) * | 2014-12-09 | 2016-06-20 | 株式会社荏原製作所 | バフ処理装置、および、基板処理装置 |
| JP6947346B2 (ja) * | 2016-09-23 | 2021-10-13 | 株式会社Ｓｃｒｅｅｎホールディングス | 基板処理装置及び基板処理方法 |
-
2017
- 2017-10-25 JP JP2017206295A patent/JP7004144B2/ja active Active
-
2018
- 2018-10-10 CN CN201880068938.3A patent/CN111263975A/zh active Pending
- 2018-10-10 KR KR1020207012440A patent/KR102323310B1/ko active IP Right Grant
- 2018-10-10 WO PCT/JP2018/037812 patent/WO2019082662A1/ja active Application Filing
- 2018-10-22 TW TW107137102A patent/TWI679696B/zh active
Patent Citations (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2008084954A (ja) * | 2006-09-26 | 2008-04-10 | Dainippon Screen Mfg Co Ltd | 基板処理装置のスケジュール作成方法及びそのプログラム |
| TWI539516B (zh) * | 2013-09-30 | 2016-06-21 | Shibaura Mechatronics Corp | 基板處理方法及基板處理裝置 |
| TWI579037B (zh) * | 2013-11-13 | 2017-04-21 | Tokyo Electron Ltd | Substrate liquid processing device and substrate liquid treatment method |
Also Published As
| Publication number | Publication date |
|---|---|
| JP2019079954A (ja) | 2019-05-23 |
| JP7004144B2 (ja) | 2022-01-21 |
| TW201923878A (zh) | 2019-06-16 |
| KR102323310B1 (ko) | 2021-11-05 |
| KR20200060484A (ko) | 2020-05-29 |
| WO2019082662A1 (ja) | 2019-05-02 |
| CN111263975A (zh) | 2020-06-09 |
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