TWI671829B - 半導體裝置之製造方法 - Google Patents

半導體裝置之製造方法 Download PDF

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Publication number
TWI671829B
TWI671829B TW104138110A TW104138110A TWI671829B TW I671829 B TWI671829 B TW I671829B TW 104138110 A TW104138110 A TW 104138110A TW 104138110 A TW104138110 A TW 104138110A TW I671829 B TWI671829 B TW I671829B
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Taiwan
Prior art keywords
lower mold
mold cavity
block
aforementioned
cavity block
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TW104138110A
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English (en)
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TW201628107A (zh
Inventor
原田晴彥
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日商瑞薩電子股份有限公司
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    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
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    • B29C45/02—Transfer moulding, i.e. transferring the required volume of moulding material by a plunger from a "shot" cavity into a mould cavity
    • B—PERFORMING OPERATIONS; TRANSPORTING
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    • B29C45/14655—Injection moulding, i.e. forcing the required volume of moulding material through a nozzle into a closed mould; Apparatus therefor incorporating preformed parts or layers, e.g. injection moulding around inserts or for coating articles for obtaining an insulating effect, e.g. for electrical components connected to or mounted on a carrier, e.g. lead frame
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Abstract

本發明係一種藉由抑制模製步驟中樹脂毛刺之發生而提高半導體裝置之可靠性及生產效率的半導體裝置之製造方法。
在模製模具中，使設置於下模模腔區塊CVa之背面側之推升銷UP之前端面、及下模模腔區塊CVa之背面中推升銷UP之前端面所接觸之面，以隨著朝向被供給模製樹脂之灌注區塊PB之灌注腔PO側而與下模模腔區塊CVa之表面之距離變長之方式傾斜。藉此，在將下模模腔區塊CVa返回至初始位置時，因下模模腔區塊CVa係一邊稍許朝灌注區塊PB側移動一邊上升，故在灌注區塊PB之側面與下模模腔區塊CVa之側面之間不會形成縫隙。

Description

半導體裝置之製造方法
本發明係關於一種半導體裝置之製造技術，其係能夠適宜地利用於例如利用轉注成形方式來樹脂密封半導體晶片之半導體裝置之製造者。
按，例如在日本特開2006-049697號公報(專利文獻1)中，記載有下述技術：在將樹脂注入具有上模及下模之成形模具之模腔中並使上模與下模隔開後，利用銷件使基板安裝台朝上方移動，而使相對於基底構件之基板安裝台的高度位置回歸至初始位置。
又，在日本特開2002-343819號公報(專利文獻2)中，尚記載有下述技術：在進行樹脂密封時，藉由將熔融樹脂之樹脂壓力施加於作為剛性構件之可動錐形構件而使上模與基板之間不會產生縫隙。藉此來抑制樹脂毛刺，另外，利用壓縮彈簧以合適之夾壓來夾持基板。
[先前技術文獻]
[專利文獻]
[專利文獻1]日本特開2006-049697號公報
[專利文獻2]日本特開2002-343819號公報
在樹脂密封半導體晶片之模製步驟中，若模製樹脂附著在搭載 有半導體晶片之封裝基板之側面上等等之情況下，則此模製樹脂會成為樹脂毛刺，且飛散而成為異物。而且，經本發明者之研究而明確發現：由於此異物之原因而降低了半導體裝置之可靠性及生產效率。
本發明其他課題與新穎的特徵可由本說明書之記述及附圖來闡明。
根據一實施形態，在包含上模具、下模具及灌注區塊之模製模具中，使設置於下模模腔區塊之背面側之推升銷之前端面、及下模模腔區塊之背面中推升銷之前端面所接觸之面，以隨著朝向被供給模製樹脂之灌注腔側而與下模模腔區塊之表面之距離變長之方式傾斜。
根據一實施形態，藉由抑制模製步驟中之樹脂毛刺之發生，能夠提高半導體裝置之可靠性及生產效率。
AB‧‧‧晶粒接合材(接著劑)
BE‧‧‧接合電極
BL‧‧‧凸塊銲盤(電極墊)
BW‧‧‧導電性構件(接合線)
CAVa‧‧‧下模模腔
CAVb‧‧‧上模模腔
CB‧‧‧料道區塊
CH‧‧‧連接孔
CL1‧‧‧配線層
CL2‧‧‧配線層
CL3‧‧‧配線層
CL4‧‧‧配線層
CM‧‧‧導電性構件
CO‧‧‧芯材
CS‧‧‧壓縮彈簧
CVa‧‧‧下模模腔區塊
CVb‧‧‧上模模腔區塊
DM‧‧‧下模具(第1模具)
DMU‧‧‧下模單元
EP‧‧‧電極墊
EJP‧‧‧頂出銷
GA‧‧‧澆口
H1‧‧‧長度
H2‧‧‧長度
IL1‧‧‧絕緣層
IL2‧‧‧絕緣層
L‧‧‧尺寸
MB1‧‧‧樹脂毛刺
MB2‧‧‧樹脂毛刺
MB3‧‧‧樹脂毛刺
MB4‧‧‧樹脂毛刺
MTA‧‧‧模製樹脂
PB‧‧‧灌注區塊
PF1‧‧‧保護膜
PF2‧‧‧保護膜
PL‧‧‧柱塞
PO‧‧‧灌注腔
PS‧‧‧封裝基板(基板、配線基板)
PSx‧‧‧上面(表面)
PSy‧‧‧下面(背面)
RA‧‧‧流動通路(澆道)
RS‧‧‧樹脂密封體(密封體)
SB‧‧‧銲球(外部端子)
SC‧‧‧半導體晶片
SD‧‧‧半導體裝置(BGA封裝)
ST‧‧‧基材
TH‧‧‧貫通孔(導通孔)
UM‧‧‧上模具(第2模具)
UP‧‧‧推升銷
UPH‧‧‧供插入推升銷之孔(推升銷用之孔)
圖1係顯示一實施形態之半導體裝置(BGA封裝)之主要部分剖面圖。
圖2(a)及圖2(b)分別係顯示一實施形態之模製裝置之一例的主要部分剖面圖、及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
圖3係顯示一實施形態之搭載有下模模腔區塊之下模單元的主要部分俯視圖。
圖4係一實施形態之半導體裝置之製造方法之模製步驟的步驟圖。
圖5(a)及圖5(b)分別係說明一實施形態之模製步驟之模製裝置之狀態的主要部分剖面圖、及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
圖6係說明一實施形態之模製步驟之模製裝置之狀態而透視模製模具之上模具的主要部分俯視圖。
圖7(a)及圖7(b)分別係說明繼圖5及圖6之後、模製步驟之模製裝置之狀態的主要部分剖面圖，及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
圖8(a)及圖8(b)分別係說明繼圖7之後、模製步驟之模製裝置之狀態的主要部分剖面圖，及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
圖9係說明繼圖7之後、模製步驟之模製裝置之狀態而透視模製模具之上模具的主要部分俯視圖。
圖10(a)及圖10(b)分別係說明繼圖8及圖9之後、模製步驟之模製裝置之狀態的主要部分剖面圖，及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
圖11係說明繼圖8及圖9之後、模製步驟之模製裝置之狀態而透視模製模具之上模具的主要部分俯視圖。
圖12(a)及圖12(b)分別係說明繼圖10及圖11之後、模製步驟之模製裝置之狀態的主要部分剖面圖，及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
圖13係說明繼圖12之後、模製步驟之模製裝置之狀態的主要部分剖面圖。
圖14係顯示一實施形態之模製裝置之變化例的主要部分剖面圖。
圖15係說明一實施形態之模製步驟之模製裝置之變化例的狀態而將下模單元之一部分擴大顯示的主要部分剖面圖。
圖16(a)及圖16(b)分別係顯示本發明者比較研究後之模製裝置之一例的主要部分剖面圖、及將模製裝置之下模單元之一部分擴大顯示 的主要部分剖面圖。
圖17(a)係說明附著在封裝基板之側面上的樹脂毛刺而將下模單元之一部分擴大顯示的主要部分剖面圖，圖17(b)係說明附著在封裝基板之側面上之樹脂毛刺的其他例而將下模單元之一部分擴大顯示的主要部分剖面圖。
圖18係說明附著在半導體裝置(BGA封裝)之外部端子的接合部之樹脂毛刺的背面圖。
在下述實施形態中，為便於說明，在有必要時係分割為複數個部分或實施形態而說明，除特別明示之情形以外，其等並非係彼此無關者，而是其一者為其他者之一部分或全部之變化例、細節、補充說明等之關係。
又，在下述實施形態中，在言及要件之數目等(包含個數、數值、量、範圍等)時，除特別明示之情形及在原理上明確地限定於特定之數目之情形等外，其並未限定於該特定之數目者，即可為特定之數目以上亦可為以下。
又，應瞭解在下述實施形態中，其構成要件(包含要件步驟等)除特別明示之情形及被認為在原理上明確為必須之情形外，並不一定為必須者。
又，應瞭解在提及「由A組成」、「由A構成」、「具有A」、「包含A」時，除特別明示只包含該要件之意思之情形等外，並不排除其以外之要件。同樣，在下述實施形態中，在言及構成要件等之形狀、位置關係等時，除特別明示之情形及被認為在原理上明確地並非如此之情形外，係包含實質上與其形狀等近似或類似者等。此一事宜針對上述數值及範圍亦相同。
又，在下述實施形態所使用之圖式中，即便在平面圖中，亦有 為便於觀察圖式而附加陰影線之情形。另外，在用於說明下述實施形態之所有圖式中，原則上對具有相同功能者賦予相同之符號，而省略其重複說明。以下，基於圖式詳細地說明本發明之實施形態。
(對模製步驟中之課題的詳細說明)
為使本實施形態的半導體裝置之製造方法更加明確，而詳細地說明由本發明者所發現之在樹脂密封半導體晶片之模製步驟中的課題。
在例如BGA(球柵陣列)封裝般之基板品的製造中，有使用模製模具(上模具、下模具及灌注區塊)來樹脂密封半導體晶片之模製步驟。
圖16(a)及圖16(b)分別係顯示本發明者比較研究後之模製裝置之一例的主要部分剖面圖、及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。
即便模製模具在搭載於下模模腔區塊CVa之下模模腔CAVa之表面上的基材ST(具體而言係搭載著半導體晶片SC之封裝基板(基板、配線基板)PS)之厚度上有不均一，下模模腔區塊CVa亦能夠以吸收其厚度之不一致之方式而處於能夠滑動(上下移動)之狀態。此外，為使在前一個模製步驟完成後能夠進行後一個模製步驟，將用於使下模模腔區塊CVa返回至初始位置之推升銷UP設置在下模模腔區塊CVa之背面側。
另，為使下模模腔區塊CVa能夠滑動而在下模模腔區塊CVa之側面與供給模製樹脂MTA之灌注區塊PB之側面之間設置例如5~10μm左右之縫隙。其結果是自灌注區塊PB供給至上模模腔CAVb內之模製樹脂MTA的一部分，在與模製樹脂MTA之流動通路(例如圖11所示之澆道RA)相當部分中進入上述縫隙。
而且，例如如圖17(a)所示般，進入上述縫隙之模製樹脂MTA逐漸蓄積，若該模製樹脂MTA一旦成為樹脂毛刺MB1，則會阻礙下模模 腔區塊CVa之滑動，從而導致下模模腔區塊CVa不再返回至初始位置。若在下模模腔區塊CVa尚未完全返回至初始位置之狀態下進行後一個模製步驟，則模製樹脂MTA之一部分(樹脂毛刺MB2)會附著在封裝基板PS之側面上，之後自封裝基板PS之側面上脫離之樹脂毛刺MB2將成為異物之原因。
又，例如如圖17(b)所示般，在模製樹脂MTA之一部分(樹脂毛刺MB3)附著在灌注區塊PB側面上時，亦與上述樹脂毛刺MB1相同，附著在灌注區塊PB之側面上之樹脂毛刺MB3會阻礙下模模腔區塊CVa之滑動，從而導致下模模腔區塊CVa不再返回至初始位置。若在下模模腔區塊CVa尚未完全返回至初始位置之狀態下進行後一個模製步驟，則模製樹脂MTA之一部分(樹脂毛刺MB4)會附著在封裝基板PS之側面上，之後自封裝基板PS之側面上脫離之樹脂毛刺MB4將成為異物之原因。
進而，例如如圖18所示般，成為異物之原因之樹脂毛刺MB2、MB4飛散，若樹脂毛刺MB2、MB4附著在半導體裝置(BGA封裝)SD之銲球(外部端子)SB之接合部(銲盤)上，則因銲球SB無法連接而製造出有缺陷的不合格品，從而降低半導體裝置SD之可靠性及生產效率。
因此，有必要使模製樹脂MTA不會進入下模模腔區塊CVa之側面與灌注區塊PB之側面之間。
(實施形態) 1、半導體裝置之構造
本實施形態之半導體裝置係在封裝基板上搭載有半導體晶片之樹脂密封型半導體封裝。以下，取BGA封裝作為本實施形態之半導體裝置之一例，利用圖1說明其構造。圖1係顯示半導體裝置(BGA封裝)之主要部分剖面圖。
如圖1所示，本實施形態之半導體裝置(BGA封裝)SD之封裝構造 具備封裝基板(基板、配線基板)PS，該封裝基板PS係具有上面(表面)PSX、及與該上面PSx相反側之下面(背面)PSy者。此外，在封裝基板PS之上面PSx側上具有：形成有半導體元件之半導體晶片SC、及密封半導體晶片SC之樹脂密封體(密封體)RS；在封裝基板PS之下面PSy側上具有：複數個凸塊銲盤(電極墊)BL、及連接於複數個凸塊銲盤BL上之複數個銲球(外部端子)SB。針對封裝基板PS、半導體晶片SC及銲球SB詳細地說明如下。
<<封裝基板PS>>
封裝基板PS之與其厚度方向交叉之平面形狀形成為四邊形。封裝基板PS包含多層配線構造，在本實施形態中其具有4個配線層。封裝基板PS之厚度為例如0.2~0.6mm左右。
若詳細地來說明，則封裝基板PS具有：芯材CO、形成於該芯材CO之表面(上面PSx側)上之配線層CL1、以覆蓋該配線層CL1之方式形成之絕緣層IL1、及形成於該絕緣層IL1之表面上之配線層CL2。此處，複數個接合電極BE包含最上層之配線層CL2之一部分，且自保護膜PF1露出，該保護膜PF1係以覆蓋該最上層之配線層CL2之方式形成者。
又，封裝基板PS還具有：形成於位於與芯材CO之表面之相反側之背面(下面PSy側)的配線層CL3、以覆蓋該配線層CL3之方式而形成之絕緣層IL2、及形成於該絕緣層IL2之表面之配線層CL4。此處，複數個凸塊銲盤BL包含最下層之配線層CL4之一部分，且自保護膜PF2露出，該保護膜PF2係以覆蓋該最下層之配線層CL4之方式形成者。
又，自封裝基板PS之上面PSX朝向下面PSy或自芯材CO之表面朝向背面形成有複數個貫通孔(導通孔)TH，在複數個貫通孔TH之內部(內壁)上分別形成有使各配線層CL1、CL2、CL3、CL4彼此電性地連接之導電性構件CM。又，經由形成於絕緣層IL1、IL2之複數個連接 孔CH，配線層CL1與配線層CL2電性地連接，且配線層CL3與配線層CL4電性地連接。
芯材CO及各絕緣層IL1、IL2係由使例如環氧樹脂系或聚醯亞胺系之熱固性絕緣樹脂含浸於玻璃纖維之高彈性樹脂而形成。又，各配線層CL1、CL2、CL3、CL4係由例如以銅為主要成分之金屬膜形成。
被覆封裝基板PS之上面PSX側之保護膜PF1主要係以保護封裝基板PS之最上層的配線層CL2為目的而形成，而被覆封裝基板PS之下面PSy側之保護膜PF2主要係以保護封裝基板PS之最下層的配線層CL4為目的而形成。保護膜PF1、PF2係包含例如以環氧樹脂系或聚醯亞胺系之熱固性絕緣樹脂為主要成分之阻焊劑。
<<半導體晶片SC>>
半導體晶片SC之與其厚度方向交叉之平面形狀形成為四邊形，其構成為：具有例如包含矽之半導體基板、形成於該半導體基板之主面(表面)上之複數個半導體元件、將絕緣層與配線層分別積層成複數層之多層配線層、及以覆蓋該多層配線層之方式形成之表面保護膜。
半導體晶片SC係使與半導體晶片SC之主面(表面)相反側之背面和保護膜PF1相對向，經由晶粒接合材(接著劑)AB搭載於封裝基板PS之上面PSx側。在本實施形態中所使用之晶粒接合材AB係例如為糊狀或薄膜狀之接著劑。
在半導體晶片SC之主面上，沿半導體晶片SC之各邊配置有與複數個半導體元件電性地連接的複數個電極墊EP。該等電極墊EP包含多層配線層中之最上層之配線，且自開口部露出，該開口部係在半導體晶片SC之表面保護膜上與各個電極墊EP相對應而形成者。
又，複數個電極墊EP與配置於封裝基板PS之上面PSx上之複數個接合電極BE係藉由複數個導電性構件(接合線)BW而分別電性地連接。導電性構件BW使用例如金線。導電性構件BW利用例如將超音波 振動併用在熱壓接中之釘頭式接合(球銲)法，將配置於半導體晶片SC之主面上之電極墊EP與配置於封裝基板PS之上面PSx上之接合電極BE予以連接。
半導體晶片SC及導電性構件BW由被覆封裝基板PS之上面PSx側之樹脂密封體RS密封。為追求低應力化之目的，樹脂密封體RS係由添加有例如酚系硬化劑、矽膠及大量的填充劑(例如二氧化矽)等環氧樹脂系之熱固性絕緣樹脂形成。樹脂密封體RS係利用如後述之轉注成形法而形成。
<<銲球SB>>
在形成於封裝基板PS之下面PSy上之複數個凸塊銲盤BL上，接合有複數個銲球SB。複數個凸塊銲盤BL自開口部露出，該開口部係在被覆封裝基板PS之下面PSy側之保護膜PF2上與各個凸塊銲盤BL相對應而形成者，並且複數個銲球SB分別與複數個凸塊銲盤BL電性地且機械地連接。銲球SB使用由實質上不含鉛之無鉛焊料組成的焊料凸塊、例如由Sn-3〔wt%〕、Ag-0.5〔wt%〕、Cu所組成之焊料凸塊等。
2、模製裝置(成形裝置)的構造
利用圖2(a)、圖2(b)及圖3說明本實施形態之模製裝置(成形裝置)之構造。圖2(a)及圖2(b)分別係顯示模製裝置之一例的主要部分剖面圖、及將模製裝置之下模單元之一部分擴大顯示的主要部分剖面圖。圖3係顯示搭載有下模模腔區塊之下模單元的主要部分俯視圖。
如圖2(a)及圖2(b)所示，本實施形態之模製裝置係轉注成形用之半導體製造裝置。模製裝置之模製模具具有：配置有搭載著半導體晶片之封裝基板的下模具DM(第1模具)；及與下模具DM相對向、且與該下模具DM卡合而將搭載有半導體晶片之封裝基板密閉的上模具UM(第2模具)。另外，模製裝置之模製模具還具有供給模製樹脂之灌注區塊PB。在以下說明中，將下模具DM與灌注區塊PB合稱為下模單 元DMU，在圖2(a)中，下模單元DMU之用虛線包圍之區域係灌注區塊PB，其他之區域係下模具DM。
上模具UM形成為與下模具DM相對應之構成。在上模具UM中具備：上模模腔CAVb(模腔部)，成為樹脂密封半導體晶片之封裝區域；澆口GA，在圖2(a)及圖2(b)中省略其圖示，在模製樹脂流入上模模腔CAVb內時成為入口(參照圖11)；及上模模腔區塊CVb，在該上模模腔區塊CVb中形成有經由澆口GA與上模模腔CAVb連通而成為模製樹脂之流入通路之澆道RA(參照圖11)等。另外，在上模模腔區塊CVb中，形成有成為模製樹脂之流入源、且在閉合上模具UM與下模具DM時與形成於上模具UM中之澆道RA相連通之料道區塊CB等。
構成下模單元DMU之下模具DM係灌注區塊PB以外之區域，在下模具DM上具備形成有成為樹脂密封半導體晶片之封裝區域之下模模腔CAVa的下模模腔區塊CVa。在本實施形態中，在灌注區塊PB之兩側配置有下模模腔區塊CVa(參照後述之圖3)。在下模模腔CAVa之表面(成形面、主面)上，配置有搭載著半導體晶片之封裝基板。另外，在本實施形態中，由於係將下模模腔CAVa之表面與下模模腔區塊CVa之表面設為同一平面，故在言及下模模腔區塊CVa之表面時，亦包含下模模腔CAVa之表面。
再者，在下模具DM中，具備用於將樹脂密封有半導體晶片之基材自下模模腔區塊CVa推升之複數個頂出銷EJP。又，在下模具DM中，尚具備在模製步驟後可推升下模模腔區塊CVa而將其返回至初始位置之複數個推升銷UP、及可使下模模腔區塊CVa對應於夾壓而上升或下降之複數個壓縮彈簧CS。
頂出銷EJP之一端係例如以自下模模腔區塊CVa之表面突出30~50μm左右之方式而設置。
又，推升銷UP之前端面(推升下模模腔區塊CVa之面、推升面)係 以隨著朝向灌注區塊PB側而與下模模腔區塊CVa之表面(下模模腔CAVa中搭載封裝基板之表面)之距離變長之方式傾斜。換言之，從剖面觀察，推升銷UP之前端面之朝上模模腔CAVb內注入樹脂側(灌注腔PO側)與下模模腔區塊CVa之表面(下模模腔CAVa中搭載封裝基板之表面)的長度(H1)，較推升銷UP之前端面之上模模腔CAVb的中心側與下模模腔區塊CVa之表面(下模模腔CAVa中搭載封裝基板之表面)的長度(H2)更長。又，從剖面觀察，推升銷UP之前端面，係以朝向樹脂之流動方向而與下模模腔區塊CVa之表面(下模模腔CAVa中搭載封裝基板之表面)的距離變短之方式傾斜。又，與下模模腔CAVa之表面相反側之背面中推升銷UP之前端面所接觸之面亦與上述情形相同，仿效推升銷UP之前端面，以隨著朝向灌注區塊PB側而與下模模腔區塊CVa之表面(搭載下模模腔CAVa之封裝基板之表面)之距離變長之方式傾斜。
進而，推升銷UP之前端面係經施以鏡面加工，使其表面之粗糙度為例如3μm以下之十點平均粗糙度(Rz)。藉由施以鏡面加工，能夠使推升銷UP之移動變得滑順。又，在推升銷UP之前端面尚施以硬質鉻鍍覆。藉由在推升銷UP之前端面形成鍍覆膜，能夠使推升銷UP之前端面不易磨損，且能夠使推升銷UP之移動變得滑順。鍍覆膜之厚度係例如1μm左右。
在構成下模單元DMU之灌注區塊PB內，形成有經投入料片(利用壓力使模製樹脂固化者)之灌注腔PO。在該灌注腔PO內設置有上下移動之柱塞PL。藉由利用伺服馬達使柱塞PL上升而加壓並熔融已投入至灌注腔PO內之料片。料片經熔融而成為流動化之模製樹脂，經由料道區塊CB、澆道RA及澆口GA等被注入至上模模腔CAVb內。
又，如圖3所示，例如在第1方向上具有複數個灌注腔PO之灌注區塊PB的兩側(在下模模腔區塊CVa之表面與第1方向正交之第2方向) 上，分別配置有下模模腔區塊CVa。而且，在該等下模模腔區塊CVa之基材搭載區內、亦即在下模模腔CAVa內，載置有搭載著複數個半導體晶片之封裝基板。
又，模製模具(上模具UM及下模單元DMU(下模具DM及灌注區塊PB))之構造並非限定於利用圖2(a)、圖2(b)及圖3所說明之構造者。例如在本實施形態中，係將料道區塊及澆道等一起形成於上模具UM中，但亦可將料道區塊形成於上模具UM中而將澆道形成於下模具DM中，或亦可將料道區塊及澆道等一起形成於下模具DM中。
3、半導體裝置之製造方法
利用圖4~圖13說明本實施形態之半導體裝置之製造方法(以模製步驟為主)。圖4係半導體裝置之製造方法之模製步驟之步驟圖。圖5、圖7、圖8、圖10及圖12之各個(a)及(b)分別係說明模製步驟之模製裝置之狀態的主要部分剖面圖、及將模製裝置之下模單元之一部分擴大顯示之主要部分剖面圖。圖6、圖9及圖11係說明模製步驟之模製裝置之狀態而透視模製模具之上模具的主要部分俯視圖。圖13係說明模製步驟之模製裝置之狀態的主要部分剖面圖。
本實施形態之主要特徵在於：藉由防止在模製步驟中發生樹脂毛刺而追求半導體裝置之高可靠性及生產效率之提高，針對其細節及效果等係利用後述之說明來闡明。
〔半導體晶片準備步驟〕
在半導體晶圓之電路形成面上形成有積體電路。積體電路係在被稱為前步驟或擴散步驟之製造步驟中，根據特定的製造製程以晶片單位形成在半導體晶圓上。其後，對在半導體晶圓上形成之各半導體晶片之合格、不合格進行判定後，切割半導體晶圓而使其單片化為各半導體晶片。
〔封裝基板準備步驟〕
準備具有上面、及與上面相反側之下面之多層配線構造的封裝基板。例如封裝基板之構成係在長邊方向上配置有3個相當於1個半導體產品份額的晶片搭載區域(參照後述之圖6)。
〔晶粒接合步驟〕
其次，在封裝基板之上面(主面、表面)的各晶片搭載區域上，經由晶粒接合材(接著劑)接合半導體晶片。
〔線接合步驟〕
其次，利用例如將超音波振動併用在熱壓接中之釘頭式接合法，經由導電性構件(接合線)分別電性地連接在半導體晶片之主面上所形成之複數個電極墊與在封裝基板之上面所配置之接合電極(參照後述之圖6)。接合線係使用例如15~20μmΦ之金線。
〔模製步驟〕 <<步驟1：基材(參照下述)之安裝>>
首先，如圖5(a)、圖5(b)及圖6所示，在下模模腔區塊CVa表面上，定位並載置搭載有被密封物即複數個半導體晶片SC之封裝基板PS(以下稱為基材ST。)。其次，在將下模具DM之溫度設定為例如175℃左右之狀態下，對基材ST施加20秒左右的預熱處理。該處理係出於利用熱來使基材ST之變形穩定等之目的而進行。其次，在將下模具DM及上模具UM之溫度設定為例如175℃左右之狀態下，使基材ST與下模模腔CAVa之表面密著。
此處，下模模腔區塊CVa相對於下模單元DMU處於初始位置。亦即，在初始位置中，下模模腔區塊CVa之表面與灌注區塊PB之上面處於同一平面。又，在初始位置中，係以在下模模腔區塊CVa之側面與灌注區塊PB之側面之間不會形成縫隙之方式設計下模模腔區塊CVa及灌注區塊PB。進而，在初始位置中，以下模模腔區塊CVa之側面與封裝基板PS之側面在上下方向(下模模腔區塊CVa及封裝基板PS之厚度 方向)上成為同一面之方式，將基材ST載置於下模模腔區塊CVa之表面上。
<<步驟2：合模>>
其次，如圖7(a)及圖7(b)所示，使下模單元DMU整體朝上方移動(上升)直至合模位置。並且，使基材ST之尚未搭載半導體晶片SC、且尚未連接導電性構件BW之封裝基板PS之外周部的上面與上模具UM之上模模腔區塊CVb接觸，從而合模上模具UM與下模具DM。藉此，在上模具UM與下模具DM之間以模製樹脂不會漏出之方式而無縫隙地夾著封裝基板PS，從而固定基材ST。此時，壓縮彈簧CS由合模力(夾力、夾壓)壓縮，在維持適切的壓力之狀態下，下模模腔區塊CVa及基材ST相對於下模單元DMU朝下方移動(下降)至合適之位置。下模模腔區塊CVa朝下方移動封裝基板PS之厚度份額之距離。
此處，即便在下模模腔區塊CVa及基材ST相對於下模單元DMU朝下方移動至適切之位置之情形下，仍以在灌注區塊PB之側面與下模模腔區塊CVa之側面之間不會形成縫隙之方式設計下模模腔區塊CVa。
又，如前述般，在初始位置中，以下模模腔區塊CVa之側面與封裝基板PS之側面在上下方向上成為同一面之方式，將基材ST載置於下模模腔區塊CVa之表面上。
<<步驟3：下模模腔之固定>>
其次，以下模模腔區塊CVa不會因在向上模模腔CAVb內注入模製樹脂時之壓力、或向注入至上模模腔CAVb內之模製樹脂所施加之壓力等而朝下方移動(下降)之方式，固定下模模腔區塊CVa。
其次，將利用例如高周波加熱機等預先加熱而軟化至某種程度之料片投入到灌注腔PO內。料片係使用例如藉由壓力使環氧樹脂系樹脂或低分子系樹脂固化者。
<<步驟4：樹脂密封>>
其次，如圖8(a)、圖8(b)及圖9所示，使柱塞PL上升而按壓料片，料片熔融後，使經液化之模製樹脂MTA自灌注腔PO加壓移動。而且，在固定下模模腔區塊CVa之狀態下，使模製樹脂MTA自料道區塊CB經由澆道RA及澆口GA注入至上模模腔CAVb內。
藉此，如圖10(a)、圖10(b)及圖11所示，一併地密封搭載於封裝基板PS之上面之複數個半導體晶片SC及複數個導電性構件BW等，而在封裝基板PS之上面側上形成內包複數個半導體晶片之一體式之立體形狀的樹脂密封體RS。其後，進行例如90秒左右之固化，直至模製樹脂MTA硬化。
此處，以在灌注區塊PB之側面與下模模腔區塊CVa之側面之間不會形成縫隙之方式設計下模模腔區塊CVa。又，亦以在灌注區塊PB之側面與封裝基板PS之側面之間不會形成縫隙之方式將基材ST載置於下模模腔區塊CVa之表面上。藉此，模製樹脂MTA不會進入灌注區塊PB之側面與下模模腔區塊CVa之側面之間、及灌注區塊PB之側面與封裝基板PS之側面之間。
<<步驟5：開模及將下模模腔區塊返回至初始位置之動作>>
其次，如圖12(a)及圖12(b)所示，經過特定時間後，在模製樹脂MTA經硬化而已形成樹脂密封體RS之際，藉由使下模單元DMU整體自合模位置下降，而打開上模具UM與下模單元DMU。
進而，將下模模腔區塊CVa返回至初始位置。將下模模腔區塊CVa返回至初始位置之動作，係使下模單元DMU朝下方移動，直至推升銷UP之前端面與下模模腔區塊CVa之背面接觸，且下模模腔區塊CVa被推升銷UP支持。
此處，推升銷UP之前端面、及下模模腔區塊CVa之背面中，推升銷UP之前端面所接觸之面，係以隨著朝向灌注區塊PB側而與下模模 腔區塊CVa之搭載封裝基板之表面之距離變長之方式傾斜。藉此，因下模模腔區塊CVa一邊稍許朝灌注區塊PB側移動一邊上升，故在灌注區塊PB之側面與下模模腔區塊CVa之側面之間不會形成縫隙。
通常情況下，考量模製模具之滑動性及模製模具之加工不均一等，以預先在灌注區塊PB之側面與下模模腔區塊CVa之側面之間能夠形成稍許縫隙之方式設計下模模腔區塊CVa。因此，例如在合模時(前述之步驟2)，與下模模腔區塊CVa下降之同時，有在灌注區塊PB之側面與下模模腔區塊CVa之側面之間形成縫隙之情形。
又，由於在下模模腔區塊CVa之表面上載置基材ST時之不均一或封裝基板PS之加工不均一等，導致有在灌注區塊PB之側面與封裝基板PS之側面之間形成縫隙之情形。
然而，假設在灌注區塊PB之側面與下模模腔區塊CVa之側面之間形成有縫隙，或在灌注區塊PB之側面與封裝基板PS之側面之間形成有縫隙，即便模製樹脂MTA進入上述縫隙，在將下模模腔區塊CVa返回至初始位置時，仍能夠將模製樹脂MTA自上述縫隙刮出。藉此除去附著在上述縫隙之模製樹脂MTA，從而能夠將下模模腔區塊CVa返回至初始位置。
<<步驟6：分離基材之動作>>
其次，如圖13所示，使複數個頂出銷EJP上升，且將複數個頂出銷EJP之一端側自下模模腔區塊CVa之表面突出。進而，使複數個頂出銷EJP上升，將安裝於下模模腔區塊CVa之被密封物即基材(樹脂密封複數個半導體晶片SC之封裝基板PS)ST朝上方推升，從而將基材(樹脂密封複數個半導體晶片SC之封裝基板PS)ST自下模模腔區塊CVa分離。
<<步驟7：基材之取出>>
其次，將自下模模腔區塊CVa分離之基材ST從模製模具中取出。 其後，藉由使下模單元DMU整體自基材ST之取出位置上升而將模製模具返回至初始之狀態。
〔切斷步驟〕
其次，將在封裝基板PS之上面側內包複數個半導體晶片SC之一體式之樹脂密封體RS自模製裝置中取出，在切斷步驟中將其切分為各個半導體裝置(BGA封裝)。其後，根據產品規格對加工完成之半導體裝置加以選別，經過檢查步驟後，將經判斷為合格品的半導體裝置出貨。
如此般，根據本實施形態，推升銷UP之前端面、及下模模腔區塊CVa之背面中推升銷UP之前端面所接觸之面，係以隨著朝向灌注區塊PB側而與下模模腔區塊CVa之搭載封裝基板PS之表面之距離變長之方式傾斜。藉此，在樹脂密封後，在將下模模腔區塊CVa返回至初始位置時，能夠使下模模腔區塊CVa一邊稍許朝灌注區塊PB側移動一邊上升。因此，能夠在下模模腔區塊CVa之側面與灌注區塊PB之側面之間不形成縫隙地將下模模腔區塊CVa返回至初始位置，亦即下模模腔區塊CVa之表面與灌注區塊PB之上面處於同一平面之位置。
因在樹脂密封後，下模模腔區塊CVa能夠返回至適切之位置，故能夠解決在封裝基板PS之側面上發生樹脂毛刺之問題。又，即便在下模模腔區塊CVa之側面與灌注區塊PB之側面之間形成有縫隙，模製樹脂MTA進入該縫隙，且模製樹脂MTA附著在灌注區塊PB之側面上，因在下模模腔區塊CVa返回至初始位置時將其自上述縫隙刮出，故亦能夠解決在灌注區塊PB之側面上發生樹脂毛刺之問題。
進而，由於成為異物之原因的樹脂毛刺不再飛散，因此能夠減少例如因樹脂毛刺附著在半導體裝置SD之銲球SB之接合部上而導致之有缺陷的不合格品的製造，從而能夠追求半導體裝置之可靠性及生產效率之提高。
(變化例)
利用圖14及圖15來說明本實施形態之變化例。圖14係顯示模製裝置之變化例的主要部分剖面圖。圖15係說明模製步驟中模製裝置之變化例的狀態而將下模單元之一部分擴大顯示的主要部分剖面圖。
針對與前述實施形態相異之點說明如下。
在前述實施形態之模製裝置中，如圖2所示般，推升銷UP之前端面、及下模模腔區塊CVa之背面中推升銷UP之前端面所接觸之面，係以隨著朝向灌注區塊PB側而與下模模腔區塊CVa之搭載封裝基板PS之表面之距離變長之方式傾斜。
與此相對，在變化例之模製裝置中，如圖14及圖15所示，推升銷UP之前端面、及下模模腔區塊CVa之背面中推升銷UP之前端面所接觸之面，係以與下模模腔區塊CVa之搭載封裝基板PS之表面大致平行之方式形成。而且，在下模模腔區塊CVa上所形成之供插入推升銷UP之孔(以下記為推升銷用之孔)UPH之側面的一部分呈傾斜狀。其他之構造與前述實施形態之模製裝置大致相同。上述推升銷用之孔UPH並非在其厚度方向上將下模模腔區塊CVa貫通，而是形成於下模模腔區塊CVa之背面側。
具體而言，如圖15所示，在樹脂密封體RS已形成之際，藉由使下模單元DMU整體自合模位置下降而打開上模具UM與下模單元DMU。其後，將下模模腔區塊CVa返回至初始位置，進而利用複數個頂出銷EJP將基材(樹脂密封複數個半導體晶片SC之封裝基板PS)ST自下模模腔區塊CVa分離。
將下模模腔區塊CVa返回至初始位置之動作，係使下模單元DMU朝下方移動，直至使推升銷UP之前端面與在下模模腔區塊CVa形成之推升銷用之孔UPH之側面相接觸，且下模模腔區塊CVa被推升銷UP支持。
此處，推升銷用之孔UPH之側面具有以隨著朝向上方(下模模腔區塊CVa之搭載封裝基板PS之表面側)而推升銷用之孔UPH之直徑變小之方式傾斜之部分。若推升銷UP在推升銷用之孔UPH內朝上方移動，則推升銷UP之灌注區塊PB側之側面會與推升銷用之孔UPH之灌注區塊PB側之側面接觸，下模模腔區塊CVa會以推升銷UP為基準而朝灌注區塊PB方向移動(圖15之左圖所示之尺寸L)。藉此，能夠使在灌注區塊PB之側面與下模模腔區塊CVa之側面之間不會形成縫隙。
又，因推升銷用之孔UPH之側面具有傾斜之部分，故亦有使推升銷UP易於進入推升銷用之孔UPH此一效果。
如此般，根據本實施形態之變化例，與前述之實施形態大致相同，能夠將下模模腔區塊CVa返回至初始位置。又，由於樹脂毛刺不再發生及飛散，因此能夠減少例如因樹脂毛刺附著在半導體裝置之銲球之接合部上而導致之有缺陷的不合格品的製造，從而能夠追求半導體裝置之可靠性及生產效率之提高。
以上基於實施形態具體地說明了本發明者所完成之發明，但本發明並非限定於前述實施形態，應瞭解在不脫離本發明之要旨之範圍內可進行各種變更。
在前述實施形態中係以BGA封裝為例進行了說明，但並非限定於此者。本發明之主要之特徵亦可適用於使用引線框架作為配線構件的QFP(四側引腳扁平封裝)之模製步驟、及QFN(四邊扁平無引腳封裝)之模製步驟等。

Claims (10)

  1. 一種半導體裝置之製造方法，其包含以下步驟：(a)準備模製模具之步驟，該模製模具具有：具備上模模腔區塊之上模具、具備下模模腔區塊及推升銷之下模具、及具備供給樹脂之灌注腔的灌注區塊；(b)準備搭載於基板之上面之半導體晶片之步驟；(c)將前述基板配置於前述下模模腔區塊之表面上之步驟；(d)以使前述半導體晶片位於前述上模模腔區塊之上模模腔內之方式，利用前述上模具與前述下模具夾著前述基板之步驟；(e)將前述樹脂自前述灌注區塊之前述灌注腔供給至前述上模模腔內而樹脂密封前述半導體晶片之步驟；及(f)將前述推升銷推抵至前述下模模腔區塊之與前述表面相反側之背面，將在前述(d)步驟中下沉之前述下模模腔區塊返回至初始位置之步驟；且此處，前述推升銷之前端面、及前述下模模腔區塊之前述背面中前述推升銷之前述前端面所接觸之面，係以隨著朝向前述灌注腔側而與前述下模模腔區塊之前述表面之距離變長之方式傾斜。
  2. 如請求項1之半導體裝置之製造方法，其中前述推升銷之前端面經鏡面加工。
  3. 如請求項2之半導體裝置之製造方法，其中前述推升銷之前端面之表面粗糙度係為3μm以下之十點平均粗糙度。
  4. 如請求項1之半導體裝置之製造方法，其中對前述推升銷之前端面經施以鍍覆處理。
  5. 如請求項4之半導體裝置之製造方法，其中前述推升銷之前端面係經施以硬質鉻鍍覆。
  6. 如請求項1之半導體裝置之製造方法，其中將2個以上之前述推升銷推抵至前述下模模腔區塊之前述背面。
  7. 如請求項1之半導體裝置之製造方法，其中於前述下模模腔區塊之初始位置，前述下模模腔區塊之前述表面與前述灌注區塊之上面係處於同一平面者。
  8. 一種半導體裝置之製造方法，其包含以下步驟：(a)準備模製模具之步驟，該模製模具具有：具備上模模腔區塊之上模具、具備下模模腔區塊及推升銷之下模具、及具備供給樹脂之灌注腔的灌注區塊；(b)準備搭載於基板之上面之半導體晶片之步驟；(c)將前述基板配置於前述下模模腔區塊之表面上之步驟；(d)以使前述半導體晶片位於前述上模模腔區塊之上模模腔內之方式，利用前述上模具與前述下模具夾著前述基板之步驟；(e)將前述樹脂自前述灌注區塊之前述灌注腔供給至前述上模模腔內而樹脂密封前述半導體晶片之步驟；及(f)將前述推升銷插入形成於前述下模模腔區塊之與前述表面相反側之背面之孔內，且推抵至前述孔之內壁，從而將在前述(d)步驟中下沉之前述下模模腔區塊返回至初始位置之步驟；且此處，前述推升銷所插入之前述孔之側面的一部分係在隨著自前述下模模腔區塊之前述背面側朝向前述表面側而前述孔之直徑變小之方向上傾斜。
  9. 如請求項8之半導體裝置之製造方法，其中將2個以上之前述推升銷分別插入形成於前述下模模腔區塊之2個以上之前述孔內。
  10. 如請求項8之半導體裝置之製造方法，其中於前述下模模腔區塊之初始位置，前述下模模腔區塊之前述表面與前述灌注區塊之上面係處於同一平面者。
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