TWI667706B - 基板處理方法以及基板處理裝置 - Google Patents
基板處理方法以及基板處理裝置 Download PDFInfo
- Publication number
- TWI667706B TWI667706B TW107108202A TW107108202A TWI667706B TW I667706 B TWI667706 B TW I667706B TW 107108202 A TW107108202 A TW 107108202A TW 107108202 A TW107108202 A TW 107108202A TW I667706 B TWI667706 B TW I667706B
- Authority
- TW
- Taiwan
- Prior art keywords
- molar ratio
- water
- mixed acid
- concentration
- acid
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 235
- 238000003672 processing method Methods 0.000 title claims abstract description 20
- 238000012545 processing Methods 0.000 title claims description 123
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 claims abstract description 337
- 229910001868 water Inorganic materials 0.000 claims abstract description 336
- 239000002253 acid Substances 0.000 claims abstract description 319
- NBIIXXVUZAFLBC-UHFFFAOYSA-N Phosphoric acid Chemical compound OP(O)(O)=O NBIIXXVUZAFLBC-UHFFFAOYSA-N 0.000 claims abstract description 172
- 229910000147 aluminium phosphate Inorganic materials 0.000 claims abstract description 86
- 238000005530 etching Methods 0.000 claims abstract description 67
- GRYLNZFGIOXLOG-UHFFFAOYSA-N Nitric acid Chemical compound O[N+]([O-])=O GRYLNZFGIOXLOG-UHFFFAOYSA-N 0.000 claims abstract description 37
- 229910017604 nitric acid Inorganic materials 0.000 claims abstract description 37
- 238000010438 heat treatment Methods 0.000 claims abstract description 32
- 229910052751 metal Inorganic materials 0.000 claims abstract description 26
- 239000002184 metal Substances 0.000 claims abstract description 26
- 230000003247 decreasing effect Effects 0.000 claims abstract description 9
- 239000011259 mixed solution Substances 0.000 claims abstract description 6
- QTBSBXVTEAMEQO-UHFFFAOYSA-N Acetic acid Chemical compound CC(O)=O QTBSBXVTEAMEQO-UHFFFAOYSA-N 0.000 claims description 66
- 230000008859 change Effects 0.000 claims description 10
- 238000002156 mixing Methods 0.000 claims description 9
- 238000001514 detection method Methods 0.000 claims description 2
- 238000007599 discharging Methods 0.000 claims description 2
- 230000002401 inhibitory effect Effects 0.000 claims 1
- 210000005069 ears Anatomy 0.000 abstract 1
- 239000007788 liquid Substances 0.000 description 105
- 239000000126 substance Substances 0.000 description 38
- 230000032258 transport Effects 0.000 description 37
- 239000010408 film Substances 0.000 description 21
- 229910052721 tungsten Inorganic materials 0.000 description 21
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 19
- 239000010937 tungsten Substances 0.000 description 19
- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 11
- 238000010586 diagram Methods 0.000 description 11
- 230000007423 decrease Effects 0.000 description 10
- 238000000034 method Methods 0.000 description 10
- 230000003647 oxidation Effects 0.000 description 10
- 238000007254 oxidation reaction Methods 0.000 description 10
- 230000000694 effects Effects 0.000 description 9
- 239000001257 hydrogen Substances 0.000 description 9
- 229910052739 hydrogen Inorganic materials 0.000 description 9
- 230000008569 process Effects 0.000 description 9
- 230000002123 temporal effect Effects 0.000 description 9
- 238000001704 evaporation Methods 0.000 description 7
- 230000008020 evaporation Effects 0.000 description 7
- 230000000087 stabilizing effect Effects 0.000 description 7
- 238000001035 drying Methods 0.000 description 6
- 239000000969 carrier Substances 0.000 description 5
- 238000006243 chemical reaction Methods 0.000 description 5
- 239000004065 semiconductor Substances 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- KRHYYFGTRYWZRS-UHFFFAOYSA-N Fluorane Chemical compound F KRHYYFGTRYWZRS-UHFFFAOYSA-N 0.000 description 4
- 238000004891 communication Methods 0.000 description 4
- 239000000203 mixture Substances 0.000 description 4
- 230000002093 peripheral effect Effects 0.000 description 4
- 239000003814 drug Substances 0.000 description 3
- 239000004973 liquid crystal related substance Substances 0.000 description 3
- 238000011068 loading method Methods 0.000 description 3
- 239000013589 supplement Substances 0.000 description 3
- 239000002344 surface layer Substances 0.000 description 3
- 239000010409 thin film Substances 0.000 description 3
- 238000011144 upstream manufacturing Methods 0.000 description 3
- 238000009835 boiling Methods 0.000 description 2
- 230000007246 mechanism Effects 0.000 description 2
- 230000015654 memory Effects 0.000 description 2
- 238000012544 monitoring process Methods 0.000 description 2
- 230000009467 reduction Effects 0.000 description 2
- 239000007921 spray Substances 0.000 description 2
- 230000006641 stabilisation Effects 0.000 description 2
- 238000011105 stabilization Methods 0.000 description 2
- 230000001502 supplementing effect Effects 0.000 description 2
- 238000012546 transfer Methods 0.000 description 2
- 150000003658 tungsten compounds Chemical class 0.000 description 2
- VHUUQVKOLVNVRT-UHFFFAOYSA-N Ammonium hydroxide Chemical compound [NH4+].[OH-] VHUUQVKOLVNVRT-UHFFFAOYSA-N 0.000 description 1
- CBENFWSGALASAD-UHFFFAOYSA-N Ozone Chemical compound [O-][O+]=O CBENFWSGALASAD-UHFFFAOYSA-N 0.000 description 1
- 230000005856 abnormality Effects 0.000 description 1
- 229910052782 aluminium Inorganic materials 0.000 description 1
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 1
- 235000011114 ammonium hydroxide Nutrition 0.000 description 1
- 239000007864 aqueous solution Substances 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 238000000354 decomposition reaction Methods 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- 238000011010 flushing procedure Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- JEGUKCSWCFPDGT-UHFFFAOYSA-N h2o hydrate Chemical compound O.O JEGUKCSWCFPDGT-UHFFFAOYSA-N 0.000 description 1
- DKAGJZJALZXOOV-UHFFFAOYSA-N hydrate;hydrochloride Chemical compound O.Cl DKAGJZJALZXOOV-UHFFFAOYSA-N 0.000 description 1
- 150000002431 hydrogen Chemical class 0.000 description 1
- QOSATHPSBFQAML-UHFFFAOYSA-N hydrogen peroxide;hydrate Chemical compound O.OO QOSATHPSBFQAML-UHFFFAOYSA-N 0.000 description 1
- 238000002347 injection Methods 0.000 description 1
- 239000007924 injection Substances 0.000 description 1
- 238000012423 maintenance Methods 0.000 description 1
- 238000005259 measurement Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 125000000896 monocarboxylic acid group Chemical group 0.000 description 1
- 238000004064 recycling Methods 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 238000000926 separation method Methods 0.000 description 1
- 230000000153 supplemental effect Effects 0.000 description 1
- 230000009466 transformation Effects 0.000 description 1
- 238000001291 vacuum drying Methods 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3205—Deposition of non-insulating-, e.g. conductive- or resistive-, layers on insulating layers; After-treatment of these layers
- H01L21/321—After treatment
- H01L21/3213—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer
- H01L21/32133—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only
- H01L21/32134—Physical or chemical etching of the layers, e.g. to produce a patterned layer from a pre-deposited extensive layer by chemical means only by liquid etching only
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23F—NON-MECHANICAL REMOVAL OF METALLIC MATERIAL FROM SURFACE; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL; MULTI-STEP PROCESSES FOR SURFACE TREATMENT OF METALLIC MATERIAL INVOLVING AT LEAST ONE PROCESS PROVIDED FOR IN CLASS C23 AND AT LEAST ONE PROCESS COVERED BY SUBCLASS C21D OR C22F OR CLASS C25
- C23F1/00—Etching metallic material by chemical means
- C23F1/46—Regeneration of etching compositions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30604—Chemical etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/308—Chemical or electrical treatment, e.g. electrolytic etching using masks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/31—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to form insulating layers thereon, e.g. for masking or by using photolithographic techniques; After treatment of these layers; Selection of materials for these layers
- H01L21/3105—After-treatment
- H01L21/311—Etching the insulating layers by chemical or physical means
- H01L21/31105—Etching inorganic layers
- H01L21/31111—Etching inorganic layers by chemical means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67017—Apparatus for fluid treatment
- H01L21/67063—Apparatus for fluid treatment for etching
- H01L21/67075—Apparatus for fluid treatment for etching for wet etching
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67242—Apparatus for monitoring, sorting or marking
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Weting (AREA)
- Cleaning Or Drying Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2017-061394 | 2017-03-27 | ||
| JP2017061394A JP6850650B2 (ja) | 2017-03-27 | 2017-03-27 | 基板処理方法および基板処理装置 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201836004A TW201836004A (zh) | 2018-10-01 |
| TWI667706B true TWI667706B (zh) | 2019-08-01 |
Family
ID=63675528
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107108202A TWI667706B (zh) | 2017-03-27 | 2018-03-12 | 基板處理方法以及基板處理裝置 |
Country Status (5)
| Country | Link |
|---|---|
| JP (1) | JP6850650B2 (ja) |
| KR (1) | KR102337608B1 (ja) |
| CN (1) | CN110383429B (ja) |
| TW (1) | TWI667706B (ja) |
| WO (1) | WO2018180054A1 (ja) |
Families Citing this family (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| WO2023132286A1 (ja) * | 2022-01-04 | 2023-07-13 | 東京エレクトロン株式会社 | 基板処理装置および基板処理方法 |
Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009266893A (ja) * | 2008-04-22 | 2009-11-12 | Hirama Rika Kenkyusho:Kk | エッチング液調合装置及びエッチング液濃度測定装置 |
| TW201419396A (zh) * | 2012-11-05 | 2014-05-16 | Dainippon Screen Mfg | 基板處理裝置 |
| TW201430947A (zh) * | 2012-12-13 | 2014-08-01 | Kurita Water Ind Ltd | 基板洗淨液及基板洗淨方法 |
| TW201521106A (zh) * | 2013-09-27 | 2015-06-01 | Tokyo Electron Ltd | 蝕刻方法、蝕刻裝置及記憶媒體 |
| JP2015195270A (ja) * | 2014-03-31 | 2015-11-05 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
| TW201618216A (zh) * | 2014-09-30 | 2016-05-16 | 思可林集團股份有限公司 | 基板處理裝置 |
Family Cites Families (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JPH0651914B2 (ja) * | 1989-07-07 | 1994-07-06 | キヤノン株式会社 | 薄膜エッチング装置 |
| JP3492901B2 (ja) * | 1997-12-03 | 2004-02-03 | 大日本スクリーン製造株式会社 | 基板の表面処理方法および表面処理装置 |
| US6162370A (en) * | 1998-08-28 | 2000-12-19 | Ashland Inc. | Composition and method for selectively etching a silicon nitride film |
| JP4001575B2 (ja) * | 2002-12-26 | 2007-10-31 | 大日本スクリーン製造株式会社 | 基板処理装置 |
| JP2013168563A (ja) * | 2012-02-16 | 2013-08-29 | Dainippon Screen Mfg Co Ltd | 基板処理装置及びそのための処理液濃度判定方法 |
| KR102204850B1 (ko) * | 2013-03-15 | 2021-01-18 | 티이엘 매뉴팩처링 앤드 엔지니어링 오브 아메리카, 인크. | 가열된 에칭 용액을 제공하기 위한 시스템 |
| JP6657770B2 (ja) | 2014-11-27 | 2020-03-04 | 三菱瓦斯化学株式会社 | 液体組成物およびこれを用いたエッチング方法 |
-
2017
- 2017-03-27 JP JP2017061394A patent/JP6850650B2/ja active Active
-
2018
- 2018-02-22 CN CN201880015617.7A patent/CN110383429B/zh active Active
- 2018-02-22 KR KR1020197018896A patent/KR102337608B1/ko active IP Right Grant
- 2018-02-22 WO PCT/JP2018/006407 patent/WO2018180054A1/ja active Application Filing
- 2018-03-12 TW TW107108202A patent/TWI667706B/zh active
Patent Citations (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2009266893A (ja) * | 2008-04-22 | 2009-11-12 | Hirama Rika Kenkyusho:Kk | エッチング液調合装置及びエッチング液濃度測定装置 |
| TW201419396A (zh) * | 2012-11-05 | 2014-05-16 | Dainippon Screen Mfg | 基板處理裝置 |
| TW201430947A (zh) * | 2012-12-13 | 2014-08-01 | Kurita Water Ind Ltd | 基板洗淨液及基板洗淨方法 |
| TW201521106A (zh) * | 2013-09-27 | 2015-06-01 | Tokyo Electron Ltd | 蝕刻方法、蝕刻裝置及記憶媒體 |
| JP2015195270A (ja) * | 2014-03-31 | 2015-11-05 | 芝浦メカトロニクス株式会社 | 基板処理装置 |
| TW201618216A (zh) * | 2014-09-30 | 2016-05-16 | 思可林集團股份有限公司 | 基板處理裝置 |
Also Published As
| Publication number | Publication date |
|---|---|
| JP6850650B2 (ja) | 2021-03-31 |
| WO2018180054A1 (ja) | 2018-10-04 |
| TW201836004A (zh) | 2018-10-01 |
| CN110383429A (zh) | 2019-10-25 |
| KR102337608B1 (ko) | 2021-12-08 |
| JP2018164034A (ja) | 2018-10-18 |
| CN110383429B (zh) | 2023-06-09 |
| KR20190085140A (ko) | 2019-07-17 |
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