TWI663681B - 靜電夾具以及製造其之方法 - Google Patents

靜電夾具以及製造其之方法 Download PDF

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Publication number
TWI663681B
TWI663681B TW104104028A TW104104028A TWI663681B TW I663681 B TWI663681 B TW I663681B TW 104104028 A TW104104028 A TW 104104028A TW 104104028 A TW104104028 A TW 104104028A TW I663681 B TWI663681 B TW I663681B
Authority
TW
Taiwan
Prior art keywords
dielectric layer
electrode
layer
electrostatic fixture
electrostatic
Prior art date
Application number
TW104104028A
Other languages
English (en)
Chinese (zh)
Other versions
TW201545268A (zh
Inventor
Richard A. Cooke
理查A 庫克
Wolfram Neff
沃弗蘭 內夫
Carlo Waldfried
卡羅 沃弗萊德
Jakub Rybczynski
雅各 萊辛斯基
Michael Hanagan
麥克 漢那根
Wade Krull
偉德 羅歐
Original Assignee
Entegris, Inc.
美商恩特葛瑞斯股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris, Inc., 美商恩特葛瑞斯股份有限公司 filed Critical Entegris, Inc.
Publication of TW201545268A publication Critical patent/TW201545268A/zh
Application granted granted Critical
Publication of TWI663681B publication Critical patent/TWI663681B/zh

Links

Classifications

    • H10P72/722
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833Details of electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005Apparatus not specifically provided for elsewhere
    • H01L21/67242Apparatus for monitoring, sorting or marking
    • H01L21/67248Temperature monitoring
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832Multiple layers
    • H10P14/6326
    • H10P72/72
    • H10W70/05

Landscapes

  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Ceramic Engineering (AREA)
TW104104028A 2014-02-07 2015-02-06 靜電夾具以及製造其之方法 TWI663681B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US201461937135P 2014-02-07 2014-02-07
US61/937,135 2014-02-07

Publications (2)

Publication Number Publication Date
TW201545268A TW201545268A (zh) 2015-12-01
TWI663681B true TWI663681B (zh) 2019-06-21

Family

ID=52544589

Family Applications (1)

Application Number Title Priority Date Filing Date
TW104104028A TWI663681B (zh) 2014-02-07 2015-02-06 靜電夾具以及製造其之方法

Country Status (8)

Country Link
US (1) US10497598B2 (enExample)
EP (1) EP3103136B1 (enExample)
JP (1) JP6527524B2 (enExample)
KR (1) KR102369706B1 (enExample)
CN (1) CN107078086B (enExample)
SG (1) SG10201806706VA (enExample)
TW (1) TWI663681B (enExample)
WO (1) WO2015120265A1 (enExample)

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US20160379806A1 (en) * 2015-06-25 2016-12-29 Lam Research Corporation Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers
WO2017127163A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
US10186400B2 (en) * 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
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US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11279656B2 (en) 2017-10-27 2022-03-22 Applied Materials, Inc. Nanopowders, nanoceramic materials and methods of making and use thereof
TWI748145B (zh) 2017-12-18 2021-12-01 美商恩特葛瑞斯股份有限公司 藉由原子層沉積塗覆所得之耐化學性多層塗層
KR102905674B1 (ko) 2018-01-31 2025-12-29 램 리써치 코포레이션 정전 척 (electrostatic chuck, ESC) 페데스탈 전압 분리
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US10443126B1 (en) 2018-04-06 2019-10-15 Applied Materials, Inc. Zone-controlled rare-earth oxide ALD and CVD coatings
SG11202010673RA (en) * 2018-06-22 2021-01-28 Applied Materials Inc Methods of minimizing wafer backside damage in semiconductor wafer processing
US11667575B2 (en) 2018-07-18 2023-06-06 Applied Materials, Inc. Erosion resistant metal oxide coatings
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11031272B2 (en) * 2018-11-06 2021-06-08 Mikro Mesa Technology Co., Ltd. Micro device electrostatic chuck with diffusion blocking layer
JP7240497B2 (ja) * 2018-11-19 2023-03-15 インテグリス・インコーポレーテッド 電荷散逸コーティングを施した静電チャック
US11180847B2 (en) 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
US11673161B2 (en) * 2019-03-11 2023-06-13 Technetics Group Llc Methods of manufacturing electrostatic chucks
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
US11335581B2 (en) * 2019-07-31 2022-05-17 Eryn Smith System and method for adhering a semiconductive wafer to an electrostatic carrier by adjusting relative permittivity
KR102790475B1 (ko) 2019-09-16 2025-04-08 삼성디스플레이 주식회사 금속 마스크, 이의 제조 방법, 및 표시 패널 제조 방법
CN112553592B (zh) * 2019-09-25 2023-03-31 中微半导体设备(上海)股份有限公司 一种利用ald工艺对静电吸盘进行处理的方法
CN113053774A (zh) * 2019-12-27 2021-06-29 迪科特测试科技(苏州)有限公司 探测装置
KR102701133B1 (ko) * 2020-03-06 2024-09-03 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
EP4256100A1 (en) * 2020-12-02 2023-10-11 Oerlikon Surface Solutions AG, Pfäffikon Improved plasma resistant coatings for electrostatic chucks
CN112652677B (zh) * 2020-12-09 2023-10-27 晋能光伏技术有限责任公司 一种perc电池背面钝化工艺
US11417557B2 (en) * 2020-12-15 2022-08-16 Entegris, Inc. Spiraling polyphase electrodes for electrostatic chuck
US11955361B2 (en) 2021-04-15 2024-04-09 Applied Materials, Inc. Electrostatic chuck with mesas
KR102520805B1 (ko) * 2021-05-10 2023-04-13 주식회사 템네스트 이종 복합재료로 이루어진 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척
KR102548445B1 (ko) * 2021-05-10 2023-06-28 부경대학교 산학협력단 클래드재 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척
JP7572569B2 (ja) * 2021-08-31 2024-10-23 京セラ株式会社 耐プラズマ積層体、その製造方法、ならびにプラズマ処理装置
EP4423804A4 (en) * 2021-10-28 2025-09-24 Entegris Inc ELECTROSTATIC CHUCK THAT INCLUDES A TOP CERAMIC LAYER THAT INCLUDES A DIELECTRIC LAYER, AND RELATED METHODS AND STRUCTURES
KR102697860B1 (ko) * 2022-02-08 2024-08-22 (주)아이씨디 정전 장치 및 그 동작 방법
US20230294208A1 (en) * 2022-03-21 2023-09-21 Applied Materials, Inc. Electrostatic chuck with laser-machined mesas
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JP2023170413A (ja) * 2022-05-19 2023-12-01 新光電気工業株式会社 セラミックス基板及びその製造方法、静電チャック、基板固定装置、半導体装置用パッケージ
JP2024020855A (ja) * 2022-08-02 2024-02-15 新光電気工業株式会社 静電チャック、基板固定装置、ペースト
WO2025004883A1 (ja) * 2023-06-29 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置

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Also Published As

Publication number Publication date
TW201545268A (zh) 2015-12-01
JP6527524B2 (ja) 2019-06-05
SG10201806706VA (en) 2018-09-27
CN107078086A (zh) 2017-08-18
WO2015120265A1 (en) 2015-08-13
CN107078086B (zh) 2021-01-26
KR102369706B1 (ko) 2022-03-04
KR20160118259A (ko) 2016-10-11
US10497598B2 (en) 2019-12-03
JP2017507484A (ja) 2017-03-16
EP3103136A1 (en) 2016-12-14
US20160336210A1 (en) 2016-11-17
EP3103136B1 (en) 2021-06-23

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