CN107078086B - 静电夹具以及制造其之方法 - Google Patents

静电夹具以及制造其之方法 Download PDF

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Publication number
CN107078086B
CN107078086B CN201580007196.XA CN201580007196A CN107078086B CN 107078086 B CN107078086 B CN 107078086B CN 201580007196 A CN201580007196 A CN 201580007196A CN 107078086 B CN107078086 B CN 107078086B
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China
Prior art keywords
electrostatic chuck
dielectric layer
layer
microns
thickness
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Chinese (zh)
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CN107078086A (zh
Inventor
理查德·A·库克
沃弗兰·内夫
卡罗·沃弗莱德
雅各·布莱辛斯基
麦克·汉那根
伟德·罗欧
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Entegris Inc
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Entegris Inc
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/48—Manufacture or treatment of parts, e.g. containers, prior to assembly of the devices, using processes not provided for in a single one of the groups H01L21/18 - H01L21/326 or H10D48/04 - H10D48/07
    • H01L21/4814—Conductive parts
    • H01L21/4846—Leads on or in insulating or insulated substrates, e.g. metallisation
    • H01L21/4857—Multilayer substrates
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67248—Temperature monitoring
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71—Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/768—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics
    • H01L21/76801—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing
    • H01L21/76829—Applying interconnections to be used for carrying current between separate components within a device comprising conductors and dielectrics characterised by the formation and the after-treatment of the dielectrics, e.g. smoothing characterised by the formation of thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H01L21/76832—Multiple layers

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Ceramic Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
CN201580007196.XA 2014-02-07 2015-02-06 静电夹具以及制造其之方法 Active CN107078086B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201461937135P 2014-02-07 2014-02-07
US61/937135 2014-02-07
PCT/US2015/014810 WO2015120265A1 (en) 2014-02-07 2015-02-06 Electrostatic chuck and method of making same

Publications (2)

Publication Number Publication Date
CN107078086A CN107078086A (zh) 2017-08-18
CN107078086B true CN107078086B (zh) 2021-01-26

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Family Applications (1)

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CN201580007196.XA Active CN107078086B (zh) 2014-02-07 2015-02-06 静电夹具以及制造其之方法

Country Status (8)

Country Link
US (1) US10497598B2 (enExample)
EP (1) EP3103136B1 (enExample)
JP (1) JP6527524B2 (enExample)
KR (1) KR102369706B1 (enExample)
CN (1) CN107078086B (enExample)
SG (1) SG10201806706VA (enExample)
TW (1) TWI663681B (enExample)
WO (1) WO2015120265A1 (enExample)

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US20160379806A1 (en) * 2015-06-25 2016-12-29 Lam Research Corporation Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers
WO2017127163A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
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US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
US10186400B2 (en) 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
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US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11279656B2 (en) 2017-10-27 2022-03-22 Applied Materials, Inc. Nanopowders, nanoceramic materials and methods of making and use thereof
KR20200089765A (ko) * 2017-12-18 2020-07-27 엔테그리스, 아이엔씨. 원자 층 증착에 의해 도포되는 내화학약품성 다층 코팅
JP7374103B2 (ja) 2018-01-31 2023-11-06 ラム リサーチ コーポレーション 静電チャック（ｅｓｃ）ペデスタル電圧分離
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US10443126B1 (en) 2018-04-06 2019-10-15 Applied Materials, Inc. Zone-controlled rare-earth oxide ALD and CVD coatings
CN112166497B (zh) * 2018-06-22 2021-12-21 应用材料公司 半导体晶片处理中最小化晶片背侧损伤的方法
US11667575B2 (en) 2018-07-18 2023-06-06 Applied Materials, Inc. Erosion resistant metal oxide coatings
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11031272B2 (en) * 2018-11-06 2021-06-08 Mikro Mesa Technology Co., Ltd. Micro device electrostatic chuck with diffusion blocking layer
US11742781B2 (en) * 2018-11-19 2023-08-29 Entegris, Inc. Electrostatic chuck with charge dissipation coating
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US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
US11335581B2 (en) * 2019-07-31 2022-05-17 Eryn Smith System and method for adhering a semiconductive wafer to an electrostatic carrier by adjusting relative permittivity
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CN112553592B (zh) * 2019-09-25 2023-03-31 中微半导体设备(上海)股份有限公司 一种利用ald工艺对静电吸盘进行处理的方法
CN113053774A (zh) * 2019-12-27 2021-06-29 迪科特测试科技(苏州)有限公司 探测装置
KR102701133B1 (ko) * 2020-03-06 2024-09-03 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
EP4256100A1 (en) * 2020-12-02 2023-10-11 Oerlikon Surface Solutions AG, Pfäffikon Improved plasma resistant coatings for electrostatic chucks
CN112652677B (zh) * 2020-12-09 2023-10-27 晋能光伏技术有限责任公司 一种perc电池背面钝化工艺
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KR102520805B1 (ko) * 2021-05-10 2023-04-13 주식회사 템네스트 이종 복합재료로 이루어진 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척
CN117837273A (zh) * 2021-08-31 2024-04-05 京瓷株式会社 耐等离子层叠体、其制造方法和等离子处理装置
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Also Published As

Publication number Publication date
TW201545268A (zh) 2015-12-01
KR102369706B1 (ko) 2022-03-04
TWI663681B (zh) 2019-06-21
CN107078086A (zh) 2017-08-18
EP3103136B1 (en) 2021-06-23
KR20160118259A (ko) 2016-10-11
SG10201806706VA (en) 2018-09-27
JP6527524B2 (ja) 2019-06-05
US20160336210A1 (en) 2016-11-17
WO2015120265A1 (en) 2015-08-13
US10497598B2 (en) 2019-12-03
JP2017507484A (ja) 2017-03-16
EP3103136A1 (en) 2016-12-14

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