SG10201806706VA - Electrostatic chuck and method of making same - Google Patents

Electrostatic chuck and method of making same

Info

Publication number
SG10201806706VA
SG10201806706VA SG10201806706VA SG10201806706VA SG10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA SG 10201806706V A SG10201806706V A SG 10201806706VA
Authority
SG
Singapore
Prior art keywords
electrostatic chuck
electrode
dielectric layer
disposed over
making same
Prior art date
Application number
SG10201806706VA
Other languages
English (en)
Inventor
Richard Cooke
Wolfram Neff
Carlo Waldfried
Jakub Rybczynski
Michael Hanagan
Wade Krull
Original Assignee
Entegris Inc
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Entegris Inc filed Critical Entegris Inc
Publication of SG10201806706VA publication Critical patent/SG10201806706VA/en

Links

Classifications

    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • H10P72/722Details of electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P14/00Formation of materials, e.g. in the shape of layers or pillars
    • H10P14/60Formation of materials, e.g. in the shape of layers or pillars of insulating materials
    • H10P14/63Formation of materials, e.g. in the shape of layers or pillars of insulating materials characterised by the formation processes
    • H10P14/6326Deposition processes
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/06Apparatus for monitoring, sorting, marking, testing or measuring
    • H10P72/0602Temperature monitoring
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10PGENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P72/00Handling or holding of wafers, substrates or devices during manufacture or treatment thereof
    • H10P72/70Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping
    • H10P72/72Handling or holding of wafers, substrates or devices during manufacture or treatment thereof for supporting or gripping using electrostatic chucks
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W20/00Interconnections in chips, wafers or substrates
    • H10W20/01Manufacture or treatment
    • H10W20/071Manufacture or treatment of dielectric parts thereof
    • H10W20/074Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers
    • H10W20/075Manufacture or treatment of dielectric parts thereof of dielectric parts comprising thin functional dielectric layers, e.g. dielectric etch-stop, barrier, capping or liner layers of multilayered thin functional dielectric layers
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10WGENERIC PACKAGES, INTERCONNECTIONS, CONNECTORS OR OTHER CONSTRUCTIONAL DETAILS OF DEVICES COVERED BY CLASS H10
    • H10W70/00Package substrates; Interposers; Redistribution layers [RDL]
    • H10W70/01Manufacture or treatment
    • H10W70/05Manufacture or treatment of insulating or insulated package substrates, or of interposers, or of redistribution layers

Landscapes

  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
SG10201806706VA 2014-02-07 2015-02-06 Electrostatic chuck and method of making same SG10201806706VA (en)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
US201461937135P 2014-02-07 2014-02-07

Publications (1)

Publication Number Publication Date
SG10201806706VA true SG10201806706VA (en) 2018-09-27

Family

ID=52544589

Family Applications (1)

Application Number Title Priority Date Filing Date
SG10201806706VA SG10201806706VA (en) 2014-02-07 2015-02-06 Electrostatic chuck and method of making same

Country Status (8)

Country Link
US (1) US10497598B2 (enExample)
EP (1) EP3103136B1 (enExample)
JP (1) JP6527524B2 (enExample)
KR (1) KR102369706B1 (enExample)
CN (1) CN107078086B (enExample)
SG (1) SG10201806706VA (enExample)
TW (1) TWI663681B (enExample)
WO (1) WO2015120265A1 (enExample)

Families Citing this family (47)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US10236202B2 (en) * 2013-11-11 2019-03-19 Diablo Capital, Inc. System and method for adhering a semiconductive wafer to a mobile electrostatic carrier through a vacuum
US10497598B2 (en) 2014-02-07 2019-12-03 Entegris, Inc. Electrostatic chuck and method of making same
US20160379806A1 (en) * 2015-06-25 2016-12-29 Lam Research Corporation Use of plasma-resistant atomic layer deposition coatings to extend the lifetime of polymer components in etch chambers
US20170211185A1 (en) * 2016-01-22 2017-07-27 Applied Materials, Inc. Ceramic showerhead with embedded conductive layers
US11326253B2 (en) 2016-04-27 2022-05-10 Applied Materials, Inc. Atomic layer deposition of protective coatings for semiconductor process chamber components
US9850573B1 (en) 2016-06-23 2017-12-26 Applied Materials, Inc. Non-line of sight deposition of erbium based plasma resistant ceramic coating
US20180016678A1 (en) 2016-07-15 2018-01-18 Applied Materials, Inc. Multi-layer coating with diffusion barrier layer and erosion resistant layer
US20180213608A1 (en) * 2017-01-20 2018-07-26 Applied Materials, Inc. Electrostatic chuck with radio frequency isolated heaters
US10186400B2 (en) 2017-01-20 2019-01-22 Applied Materials, Inc. Multi-layer plasma resistant coating by atomic layer deposition
US10844488B2 (en) 2017-01-27 2020-11-24 Veeco Instruments Inc. Chuck systems and methods having enhanced electrical isolation for substrate-biased ALD
US10975469B2 (en) 2017-03-17 2021-04-13 Applied Materials, Inc. Plasma resistant coating of porous body by atomic layer deposition
US11289355B2 (en) 2017-06-02 2022-03-29 Lam Research Corporation Electrostatic chuck for use in semiconductor processing
US11469084B2 (en) 2017-09-05 2022-10-11 Lam Research Corporation High temperature RF connection with integral thermal choke
US11279656B2 (en) 2017-10-27 2022-03-22 Applied Materials, Inc. Nanopowders, nanoceramic materials and methods of making and use thereof
EP3728692A4 (en) * 2017-12-18 2021-09-15 Entegris, Inc. CHEMICAL-RESISTANT MULTI-LAYER PAINTING APPLIED BY ATOMIC DEPOSITION
CN111670491A (zh) 2018-01-31 2020-09-15 朗姆研究公司 静电卡盘(esc)基座电压隔离
US11848177B2 (en) 2018-02-23 2023-12-19 Lam Research Corporation Multi-plate electrostatic chucks with ceramic baseplates
US11086233B2 (en) * 2018-03-20 2021-08-10 Lam Research Corporation Protective coating for electrostatic chucks
US10443126B1 (en) 2018-04-06 2019-10-15 Applied Materials, Inc. Zone-controlled rare-earth oxide ALD and CVD coatings
WO2019245727A1 (en) * 2018-06-22 2019-12-26 Applied Materials, Inc. Methods of minimizing wafer backside damage in semiconductor wafer processing
US11667575B2 (en) 2018-07-18 2023-06-06 Applied Materials, Inc. Erosion resistant metal oxide coatings
US11183368B2 (en) 2018-08-02 2021-11-23 Lam Research Corporation RF tuning systems including tuning circuits having impedances for setting and adjusting parameters of electrodes in electrostatic chucks
US11031272B2 (en) * 2018-11-06 2021-06-08 Mikro Mesa Technology Co., Ltd. Micro device electrostatic chuck with diffusion blocking layer
CN113056816B (zh) * 2018-11-19 2024-11-12 恩特格里斯公司 具有电荷耗散涂层的静电卡盘
US11180847B2 (en) 2018-12-06 2021-11-23 Applied Materials, Inc. Atomic layer deposition coatings for high temperature ceramic components
US11673161B2 (en) * 2019-03-11 2023-06-13 Technetics Group Llc Methods of manufacturing electrostatic chucks
US10858741B2 (en) 2019-03-11 2020-12-08 Applied Materials, Inc. Plasma resistant multi-layer architecture for high aspect ratio parts
US11335581B2 (en) * 2019-07-31 2022-05-17 Eryn Smith System and method for adhering a semiconductive wafer to an electrostatic carrier by adjusting relative permittivity
KR102790475B1 (ko) * 2019-09-16 2025-04-08 삼성디스플레이 주식회사 금속 마스크, 이의 제조 방법, 및 표시 패널 제조 방법
CN112553592B (zh) * 2019-09-25 2023-03-31 中微半导体设备(上海)股份有限公司 一种利用ald工艺对静电吸盘进行处理的方法
CN113053774A (zh) * 2019-12-27 2021-06-29 迪科特测试科技(苏州)有限公司 探测装置
KR102701133B1 (ko) * 2020-03-06 2024-09-03 세메스 주식회사 지지 유닛 및 그를 포함하는 기판 처리 장치
EP4256100A1 (en) * 2020-12-02 2023-10-11 Oerlikon Surface Solutions AG, Pfäffikon Improved plasma resistant coatings for electrostatic chucks
CN112652677B (zh) * 2020-12-09 2023-10-27 晋能光伏技术有限责任公司 一种perc电池背面钝化工艺
US11417557B2 (en) * 2020-12-15 2022-08-16 Entegris, Inc. Spiraling polyphase electrodes for electrostatic chuck
US11955361B2 (en) * 2021-04-15 2024-04-09 Applied Materials, Inc. Electrostatic chuck with mesas
KR102548445B1 (ko) * 2021-05-10 2023-06-28 부경대학교 산학협력단 클래드재 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척
KR102520805B1 (ko) * 2021-05-10 2023-04-13 주식회사 템네스트 이종 복합재료로 이루어진 전극층을 포함하는 정전척의 제조방법 및 이에 의해 제조된 정전척
EP4398684A4 (en) * 2021-08-31 2025-09-17 Kyocera Corp PLASMA-RESISTANT LAMINATE, MANUFACTURING METHOD THEREOF, AND PLASMA PROCESSING APPARATUS
KR102875533B1 (ko) * 2021-10-28 2025-10-27 엔테그리스, 아이엔씨. 유전체 층을 포함하는 상부 세라믹 층을 포함하는 정전 척, 및 관련 방법 및 구조
KR102697860B1 (ko) * 2022-02-08 2024-08-22 (주)아이씨디 정전 장치 및 그 동작 방법
US20230294208A1 (en) * 2022-03-21 2023-09-21 Applied Materials, Inc. Electrostatic chuck with laser-machined mesas
US12512357B2 (en) 2022-04-01 2025-12-30 Applied Materials, Inc. Ceramic engineering by grading materials
JP2023170413A (ja) * 2022-05-19 2023-12-01 新光電気工業株式会社 セラミックス基板及びその製造方法、静電チャック、基板固定装置、半導体装置用パッケージ
JP2024020855A (ja) * 2022-08-02 2024-02-15 新光電気工業株式会社 静電チャック、基板固定装置、ペースト
WO2025004883A1 (ja) * 2023-06-29 2025-01-02 東京エレクトロン株式会社 プラズマ処理装置
WO2026014263A1 (ja) * 2024-07-12 2026-01-15 東京エレクトロン株式会社 プラズマ処理装置、静電チャックの製造方法及び静電チャックの再生方法

Family Cites Families (24)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP4004086B2 (ja) * 1996-07-22 2007-11-07 日本発条株式会社 静電チャック装置
JP3949763B2 (ja) 1996-11-21 2007-07-25 トーカロ株式会社 静電チャック部材
US5909355A (en) 1997-12-02 1999-06-01 Applied Materials, Inc. Ceramic electrostatic chuck and method of fabricating same
JPH11168134A (ja) * 1997-12-03 1999-06-22 Shin Etsu Chem Co Ltd 静電吸着装置およびその製造方法
JPH11260534A (ja) * 1998-01-09 1999-09-24 Ngk Insulators Ltd 加熱装置およびその製造方法
JP4082924B2 (ja) 2002-04-16 2008-04-30 キヤノンアネルバ株式会社 静電吸着ホルダー及び基板処理装置
EP1588404A2 (en) 2003-01-17 2005-10-26 General Electric Company Wafer handling apparatus
JP4307195B2 (ja) 2003-09-17 2009-08-05 京セラ株式会社 静電チャック
US7663860B2 (en) * 2003-12-05 2010-02-16 Tokyo Electron Limited Electrostatic chuck
WO2007005925A1 (en) 2005-06-30 2007-01-11 Varian Semiconductor Equipment Associates, Inc. Clamp for use in processing semiconductor workpieces
JP4811608B2 (ja) * 2005-10-12 2011-11-09 信越化学工業株式会社 静電吸着機能を有するウエハ加熱装置
WO2008082978A2 (en) 2006-12-26 2008-07-10 Saint-Gobain Ceramics & Plastics, Inc. Electrostatic chuck and method of forming
TWI475594B (zh) 2008-05-19 2015-03-01 恩特格林斯公司 靜電夾頭
JP4712836B2 (ja) 2008-07-07 2011-06-29 信越化学工業株式会社 耐腐食性積層セラミックス部材
JP5453902B2 (ja) 2009-04-27 2014-03-26 Toto株式会社 静電チャックおよび静電チャックの製造方法
CN102449754B (zh) 2009-05-15 2015-10-21 恩特格林斯公司 具有聚合物突出物的静电吸盘
KR100997374B1 (ko) * 2009-08-21 2010-11-30 주식회사 코미코 정전척 및 이의 제조 방법
US8637794B2 (en) * 2009-10-21 2014-01-28 Lam Research Corporation Heating plate with planar heating zones for semiconductor processing
CN105196094B (zh) 2010-05-28 2018-01-26 恩特格林斯公司 高表面电阻率静电吸盘
TW201209957A (en) 2010-05-28 2012-03-01 Praxair Technology Inc Substrate supports for semiconductor applications
US9728429B2 (en) * 2010-07-27 2017-08-08 Lam Research Corporation Parasitic plasma prevention in plasma processing chambers
JP5796076B2 (ja) 2010-09-08 2015-10-21 インテグリス・インコーポレーテッド 高導電性静電チャック
KR101974386B1 (ko) * 2012-03-21 2019-05-03 주식회사 미코 정전척
US10497598B2 (en) 2014-02-07 2019-12-03 Entegris, Inc. Electrostatic chuck and method of making same

Also Published As

Publication number Publication date
KR20160118259A (ko) 2016-10-11
JP6527524B2 (ja) 2019-06-05
EP3103136A1 (en) 2016-12-14
WO2015120265A1 (en) 2015-08-13
TW201545268A (zh) 2015-12-01
CN107078086B (zh) 2021-01-26
JP2017507484A (ja) 2017-03-16
TWI663681B (zh) 2019-06-21
EP3103136B1 (en) 2021-06-23
KR102369706B1 (ko) 2022-03-04
CN107078086A (zh) 2017-08-18
US20160336210A1 (en) 2016-11-17
US10497598B2 (en) 2019-12-03

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