JP5796076B2 - 高導電性静電チャック - Google Patents
高導電性静電チャック Download PDFInfo
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- JP5796076B2 JP5796076B2 JP2013528285A JP2013528285A JP5796076B2 JP 5796076 B2 JP5796076 B2 JP 5796076B2 JP 2013528285 A JP2013528285 A JP 2013528285A JP 2013528285 A JP2013528285 A JP 2013528285A JP 5796076 B2 JP5796076 B2 JP 5796076B2
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- electrostatic chuck
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B23—MACHINE TOOLS; METAL-WORKING NOT OTHERWISE PROVIDED FOR
- B23Q—DETAILS, COMPONENTS, OR ACCESSORIES FOR MACHINE TOOLS, e.g. ARRANGEMENTS FOR COPYING OR CONTROLLING; MACHINE TOOLS IN GENERAL CHARACTERISED BY THE CONSTRUCTION OF PARTICULAR DETAILS OR COMPONENTS; COMBINATIONS OR ASSOCIATIONS OF METAL-WORKING MACHINES, NOT DIRECTED TO A PARTICULAR RESULT
- B23Q3/00—Devices holding, supporting, or positioning work or tools, of a kind normally removable from the machine
- B23Q3/15—Devices for holding work using magnetic or electric force acting directly on the work
- B23Q3/152—Rotary devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Mechanical Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
- Gasket Seals (AREA)
Description
本出願は、2010年9月8日付けで出願された米国仮特許出願第61/380,970号及び2011年7月20日付けで出願された米国仮特許出願第61/509,970号の利益を主張する。これら特許出願の教示内容は、引用により、その全体が本明細書に包含される。
Claims (26)
- 静電チャックであって、
前記静電チャックのガス封止リングの工作物接触表面の少なくとも一部分をカバーする導電性経路であって、前記静電チャックの外側エッジの少なくとも一部分をカバーする被覆を有すると共に接地に対する電気的経路の少なくとも一部分を有する導電性経路を有し、前記導電性経路が、10 5 Ω/sq〜10 7 Ω/sqの範囲内の表面抵抗率を有し、前記静電チャックがさらに、
108 〜1012Ω/sqの範囲内の表面抵抗率を有する前記静電チャックの工作物接触表面の主フィールドエリアを有し、前記主フィールドエリアが、前記主フィールドエリアの周囲部分の上方に延在する少なくとも1つのエンボスと、前記少なくとも1つのエンボスの工作物接触表面上に導電性被覆とを有する静電チャック。 - 前記導電性経路が、ダイアモンド様炭素を有する請求項1に記載の静電チャック。
- 前記導電性経路が、ドーピングされたダイアモンド様炭素を有する請求項2に記載の静電チャック。
- 前記導電性経路が、窒素がドーピングされた水素化炭素を有する請求項3に記載の静電チャック。
- 前記導電性経路が、1ミクロン未満の厚さの被覆を有する請求項1に記載の静電チャック。
- 前記導電性経路が、前記静電チャックの絶縁体層の下部を包む請求項1に記載の静電チャック。
- 前記主フィールドエリアが、炭化珪素を有する請求項1に記載の静電チャック。
- 前記主フィールドエリアが、10 9 〜1011Ω/sqの範囲内の表面抵抗率を有する請求項7に記載の静電チャック。
- 前記静電チャックが、導電性接地層を有し、前記導電性接地層の少なくとも一部分が、前記静電チャックの絶縁体層の下部に位置し、前記導電性接地層が、前記導電性経路に電気的に接触している請求項1に記載の静電チャック。
- 前記導電性接地層の外側エッジの少なくとも一部分が、前記導電性経路によってカバーされる請求項9に記載の静電チャック。
- 前記導電性接地層が、前記静電チャックの接地ピンに電気的に接触している請求項9に記載の静電チャック。
- 前記導電性接地層の少なくとも一部分の下部に位置した導電性エポキシ層を更に有する請求項9に記載の静電チャック。
- 前記静電チャックの前記導電性経路及び前記少なくとも1つのエンボスの前記工作物接触表面上の前記導電性被覆が、それぞれ、ダイアモンド様炭素被覆を有する請求項1に記載の静電チャック。
- 前記静電チャックが、導電性接地層を有し、前記導電性接地層の少なくとも一部分が、前記静電チャックの絶縁体層の下部に位置し、前記導電性接地層が、前記導電性経路に電気的に接触している請求項1に記載の静電チャック。
- 前記静電チャックの基部が、前記基部の1つ又は複数のエッジ上に、面取りされたエリアを有する請求項1に記載の静電チャック。
- 前記導電性経路が、前記面取りされたエリア内の導電性エポキシを通じて前記基部に電気的に接触している請求項15に記載の静電チャック。
- 前記導電性経路が、前記静電チャックの外側エッジの少なくとも一部分をカバーする被覆を有し、前記導電性経路は、前記静電チャックの絶縁体層の下部を包む請求項16に記載の静電チャック。
- 前記静電チャックの前記工作物接触表面上に少なくとも1つの導電性パターンを更に有し、前記少なくとも1つの導電性パターンが、前記導電性経路に電気的に接触している請求項1に記載の静電チャック。
- 前記少なくとも1つの導電性パターンが、導電性被覆によって被覆された金属を有する請求項18に記載の静電チャック。
- 前記少なくとも1つの導電性パターンが、前記静電チャックの中心に向かって延在するスポーク、前記静電チャックのガス孔の周りのリング、及び前記静電チャックの前記工作物接触表面上の少なくとも1つのエンボスの間のトレースのうちの少なくとも1つを有する請求項18に記載の静電チャック。
- 前記静電チャックの前記主フィールドエリアが、ポリマーを有する請求項1に記載の静電チャック。
- 前記主フィールドエリアが、前記主フィールドエリアの周囲部分の上方に延在する少なくとも1つのエンボスを有し、前記少なくとも1つのエンボスが、ポリマーを有する請求項21に記載の静電チャック。
- 前記主フィールドエリアが、108 〜1010Ω/sqの範囲内の表面抵抗率を有する請求項21に記載の静電チャック。
- 前記導電性経路が、導電性被覆を有し、前記導電性被覆が、前記主フィールドエリアの少なくとも一部分をもカバーする請求項21に記載の静電チャック。
- 主フィールドエリアが、カーボンナノチューブを有する請求項1に記載の静電チャック。
- 前記ポリマーが、カーボンナノチューブが充填されたポリエーテルイミド、カーボンナノチューブが充填されたポリエーテルエーテルケトン、及びカーボンナノチューブが充填されたポリイミドのうちの少なくとも1つを有する請求項25に記載の静電チャック。
Applications Claiming Priority (5)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
US38097010P | 2010-09-08 | 2010-09-08 | |
US61/380,970 | 2010-09-08 | ||
US201161509970P | 2011-07-20 | 2011-07-20 | |
US61/509,970 | 2011-07-20 | ||
PCT/US2011/050841 WO2012033922A2 (en) | 2010-09-08 | 2011-09-08 | High conductivity electrostatic chuck |
Publications (2)
Publication Number | Publication Date |
---|---|
JP2013542590A JP2013542590A (ja) | 2013-11-21 |
JP5796076B2 true JP5796076B2 (ja) | 2015-10-21 |
Family
ID=45811160
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
JP2013528285A Active JP5796076B2 (ja) | 2010-09-08 | 2011-09-08 | 高導電性静電チャック |
Country Status (7)
Country | Link |
---|---|
US (1) | US9692325B2 (ja) |
JP (1) | JP5796076B2 (ja) |
KR (1) | KR101896127B1 (ja) |
CN (1) | CN103222043B (ja) |
SG (1) | SG188434A1 (ja) |
TW (1) | TWI534940B (ja) |
WO (1) | WO2012033922A2 (ja) |
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KR101896127B1 (ko) * | 2010-09-08 | 2018-09-07 | 엔테그리스, 아이엔씨. | 고 전도성 정전 척 |
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2011
- 2011-09-08 KR KR1020137008752A patent/KR101896127B1/ko active IP Right Grant
- 2011-09-08 US US13/818,339 patent/US9692325B2/en active Active
- 2011-09-08 CN CN201180043193.3A patent/CN103222043B/zh active Active
- 2011-09-08 JP JP2013528285A patent/JP5796076B2/ja active Active
- 2011-09-08 SG SG2013016738A patent/SG188434A1/en unknown
- 2011-09-08 WO PCT/US2011/050841 patent/WO2012033922A2/en active Application Filing
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TW201216406A (en) | 2012-04-16 |
CN103222043A (zh) | 2013-07-24 |
WO2012033922A3 (en) | 2012-05-31 |
SG188434A1 (en) | 2013-05-31 |
CN103222043B (zh) | 2016-10-12 |
TWI534940B (zh) | 2016-05-21 |
US20130155569A1 (en) | 2013-06-20 |
US9692325B2 (en) | 2017-06-27 |
KR101896127B1 (ko) | 2018-09-07 |
WO2012033922A2 (en) | 2012-03-15 |
JP2013542590A (ja) | 2013-11-21 |
KR20140012613A (ko) | 2014-02-03 |
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