TW201120988A - Electrostatic chuck and method of manufacturing the same - Google Patents

Abstract

In an electrostatic chuck for a plasma-applied apparatus, a base body is prepared and a first insulation layer having an amorphous structure is arranged on the base body. An electrode layer for generating an electrostatic force is arranged on the first insulation layer. A dielectric layer is positioned on the electrode layer. Accordingly, the leakage current and the electric arc caused by the leakage current are minimized at the electrostatic chuck, thereby improving endurance limit and electric characteristics of the electrostatic chuck.

Description

201120988 TW6493PA VI, invention, description: [Technical field of the invention] The present invention relates to an electrostatic chuck and system, and is related to a method for pulverizing a plasma device. And the method of making it. Electrostatics of Conductor Devices [Prior Art] A plasma application plate for fabricating a semiconductor device can fix a semiconductor substrate, and thus is used in a plasma to convert a gas source that generally includes a support process into a plasma and in a substrate two device Plasma has been widely used on the support board. Borrow = program. Electrostatic chuck Electrostatic chuck. The evaluation of the power substrate system fixed to the conventional electrostatic chuck usually includes the electric power layer which can be applied to the electrode layer and the electrostatic force is produced, and the second layer avoids the thermal chucking of the electrostatic chuck in the plasma application device on the electrostatic chuck. It can be coated by using a thermal coating procedure including a emulsified powder and an oxidized Is. The thermal spray layer usually has a crystalline structure based on the ceramic grade, and thus when the thermal spray coating is electrostatic chuck The electric material system is relatively good. 屯曰心; 丨电特 However, the crystallization thermal spray layer is porous and has a relatively low volume: two leakage current is generated from the thermal spray layer, and therefore the arc is often In the fr electric chuck. For these reasons, the filling procedure of filling the thermal spray θ porosity with the filler is recommended, thereby increasing the volume resistance,

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TW6493PA, the volume resistance of the dielectric layer still decreases with the increase and increase of the operation of the electrostatic chuck, and therefore the arc is still generated in the electrostatic chuck, and the substrate is unstable and adsorbed or unstable. Fixed to the electrostatic chuck. That is to say, the reduction in volume resistance due to the porosity of the thermal spray coating and the arc often cause the deterioration of the adsorption quality of the electrostatic chuck. Further, as the substrate is recently increased, the power applied to the electrode layer needs to be increased. When high voltage power is applied to the electrode layer of the electrostatic chuck, cracking occurs between the substrate and the dielectric layer of the thermal spray layer because of the different coefficients of thermal expansion between the substrate and the dielectric layer. And therefore the electrode layer and the dielectric layer will not be sufficient or electrically insulated from each other, which is known as insulation cracking. As a result, the adsorption quality of the electrostatic chuck tends to be more degraded as the substrate size becomes larger. Therefore, there is a strong need to improve electrostatic chucks in which the dielectric layer has sufficient volume resistance and a stable dielectric constant for electrostatic forces and minimal leakage current. SUMMARY OF THE INVENTION The present invention relates to an electrostatic chuck having an improved volume resistance and no degradation of a dielectric constant of a dielectric layer, thereby avoiding leakage current from a dielectric layer. The arc caused. According to some embodiments of the invention, an electrostatic chuck is provided. The electrostatic chuck includes a substrate, a first insulating layer, an electrode layer, and a dielectric layer. The first insulating layer is disposed on the substrate and the first insulating layer has an amorphous structure. The electrode layer is disposed on the first insulating layer and the electrode layer generates an electrostatic force. The dielectric layer is on the electrode layer. In an embodiment, the dielectric layer includes a first dielectric layer and a second 201120988

TW6493PA ::, layer. The first dielectric layer covers the electrode layer and the first dielectric layer has an amorphous dielectric layer on the first dielectric layer and the second dielectric layer has - in the embodiment the 'first dielectric layer has The thickness is between about 100: meters and about 300 microns, and the second dielectric layer* has a thickness of between about 2 microns and about 400 microns. In one embodiment, the first dielectric layer has a porosity of between about 5% and about 2%, and the second dielectric layer has a porosity of between about 7% and about 7%. In one embodiment, the first dielectric layer has a surface roughness of from about 4 microns to about 8 microns and the second dielectric layer has a surface roughness of from about 3 microns to about 5 microns. In one embodiment, the first dielectric layer and the second dielectric layer have a hardness of at least about 650 Hv, and the first dielectric layer and the second dielectric layer have an adhesion strength of at least about 14 MPa. In one embodiment, the first dielectric layer and the second dielectric layer together have a volume resistance of between about 1 〇 14 ohm centimeters (acm) to about 1015 micrometers ohm centimeters. The electrode layer is covered by the first dielectric layer 'the first dielectric layer is covered by the second dielectric layer. The first insulating layer has a thickness of between about 400 microns and about 600 microns. In one embodiment, a second insulating layer is disposed between the substrate and the electrode layer. The first insulating layer has a thickness of between about 1 Å and about 300 Å. The second insulating layer has a thickness of between about 200 microns and about 400 microns. In some other embodiments, an electrostatic chuck is provided. Electrostatic chuck 5 201120988

TW6493PA is a substrate, an insulating layer, an electrode layer, a first dielectric layer, and a second dielectric layer. The insulating layer is on the substrate. The electrode layer is disposed on the insulating layer and the electrode layer generates an electrostatic force. The first dielectric layer is disposed on the electrode layer and has an amorphous structure. The second dielectric layer is disposed on the first dielectric layer and has a crystalline structure. In some embodiments, a method of making an electrostatic chuck is provided. First, a substrate is prepared and a first insulating layer is formed on the substrate. The first insulating layer has an amorphous structure. Then, an electrode layer is formed on the first insulating layer, and the electrode layer generates an electrostatic force. Next, a dielectric layer is formed on the electrode layer. In one embodiment, the steps of forming a dielectric layer are as follows. A first dielectric layer is formed on the electrode layer such that the first dielectric layer has an amorphous structure. Then, a second dielectric layer is formed on the first dielectric layer to have the second dielectric layer have a crystalline structure. In an embodiment, the electrode layer may be covered by the first dielectric layer, and the second dielectric layer may be formed on the first dielectric layer, the first insulating layer, and the substrate to enable the first dielectric layer, An insulating layer and the substrate are covered by the second dielectric layer. In one embodiment, the first insulating layer, the first dielectric layer, and the second dielectric layer are coated by an atmospheric ly plasma spray coating process, a rapid oxy-combustion thermal spray coating A process (rapid oxygen-fuel thermal spray coating Pr〇), a vacuum plasma spray coating process, and a dynamic spray coating process are formed. In an embodiment, a filling process is further performed to fill a plurality of fillers in the first insulating layer, the first dielectric layer and the second dielectric layer.

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TW6493PA One • Internal space. In one embodiment, forming the electrode layer further includes forming a second insulating layer on one of the first insulating layer and the substrate. In one embodiment, a filling process is further performed to fill a plurality of fillings in the inner space of at least one of the first insulating layer, the second insulating layer, the first dielectric layer and the second dielectric layer. The second insulating layer is coated by an atmospheric plasma spray coating process, a rapid oxygen-fuel thermal spray coating process, and a vacuum beam spray coating. A vacuum plasma spray coating process is formed with one of a power spray coating process. In some embodiments, a method of making an electrostatic chuck is provided. A substrate is prepared and an insulating layer is formed on the substrate. An electrode layer is formed on the insulating layer. The electrode layer generates an electrostatic force. A first dielectric layer is formed on the electrode layer such that the first dielectric layer has an amorphous structure. A second dielectric layer is formed on the first dielectric layer such that the second dielectric layer has a crystalline structure. In some embodiments, the dielectric of the electrostatic chuck may include a plurality of layers including an amorphous thermal spray layer and a crystalline thermal spray layer, thereby increasing the volumetric electrical power of the dielectric without any deterioration of the dielectric constant. . Therefore, leakage current can be minimized in the electrostatic chuck, and thus damage due to leakage current in the electrostatic chuck can be minimized. Therefore, the overall electrical characteristics of the electrostatic chuck can be significantly improved by the multilayer dielectric. In addition, the insulator of the electrostatic chuck may also include multiple layers 'multilayer including amorphous thermal spray coating and crystalline thermal spray coating' due to the complementary crystalline thermal spray coating and improved insulation resistance between the substrate and the electrode layer in the electrostatic chuck. 7 201120988

Volume resistance of TW6493PA insulator. Further, the buffer layer can be formed in the contact area of the joint, and a high electric power is applied to the contact area of the joint, and thus the crack of the thermal stress due to the contact area of the joint can be avoided. Therefore, the electrostatic chuck can improve its long-term limitation and operational life, and thus the electrostatic chuck is greatly reduced. & + Therefore, the electrostatic chuck proposed in this embodiment can be applied to different electrical polymerization applications, such as plasma (4) devices and plasma deposition devices which improve power characteristics and long-term limitations. In order to better understand the above and other aspects of the present invention, the preferred embodiments of the present invention are described in detail below with reference to the accompanying drawings in which: FIG. A more complete description in which the figures illustrate various embodiments of the invention. The invention may be embodied in a variety of different embodiments and is not limited to the embodiments described below. The embodiments described below are intended to fully disclose the present invention, and the invention may be fully understood by those skilled in the art. For the sake of clarity, the dimensions and (4) dimensions of the layers and regions of the present invention may be exaggerated when appearing as "one component is on top of another component" and "one component is connected to another component". In the description of the "component", a member can be placed directly on the other component, or directly connected or lightly connected to another H or has a re-element or an intermediate layer in between. In contrast, - the component is directly on the other component."

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201120988 1W6493PA 于" or "One component is directly connected to another component" Description There are no other components or intermediate layers. Similar components are labeled with similar symbols. , 士 + i ^ "The term used herein and / or" includes all the meanings of the listed items. The first, second, third or other descriptions may be used at b to describe different elements, knives, regions, layers and/or portions, however these elements, components, regions, layers and/or portions are not limited thereto. It is to be understood that the description is only intended to be a singular singer, a different element, component, region, layer and/or portion. Therefore, in the present invention, the "element", "component", "region", "layer" or "layer" may be described as a second element, component, region, layer or portion. "This space-relative term, such as "below", "below", "upper" or "upper" or other similar terms, may be used to simply describe as depicted in the drawings. A component, or a relationship of a feature to another component or feature. It can be understood that these spatially relative terms include descriptions of other orientations and are not limited by the orientation in the drawings. For example, when the device in the drawing is up and down, the phrase "the component is located under another component or feature" becomes "the component is located on the other component or feature." Therefore, the term "Τ" is used in both "upper" and "lower" directions. The elements can be oriented in other directions (rotated 90 degrees or toward other directions), and the space used herein is interpreted correspondingly to the words. The words used herein are merely illustrative of the embodiments of the invention and are not intended to limit the invention. The singular forms "a" and "the" are used in the s The features, integers, steps, operations, components or components described in the "including" and "including" are used to exclude the other features, integers, steps, operations, components, 201120988

TW6493PA ingredients or a combination thereof. * - The embodiments described in the specification and the reference cross-sectional illustrations are illustrative of idealized embodiments (and intermediate architectures). For its part, it is expected that the result of the change in shape (for example, manufacturing techniques or errors) will be expected. Thus, embodiments are not to be understood as limiting a certain region to a particular shape' but should include variations derived from the particular shape, such as manufacturing tolerances. For example, 'illustrated as a rectangular implanted area, basically its corners will always have the characteristics of rounded corners or curved corners, and / or the gradient of the implant concentration is not black or white changed from implanted to non-planted Into the area. Similarly, a buried region formed by implantation may result in some implantation between the buried region and the surface being implanted. The regions illustrated in the drawings are therefore in the nature of the invention, and are not intended to be construed as limiting the scope of the invention. Unless otherwise defined, all terms (including technical and scientific terms) used herein are the same as those of ordinary skill in the art. Moreover, unless otherwise defined, the terms defined by the ordinary dictionary used herein are consistent with the meaning of the terms used in the related art, and # refers to an idealized or overly formalized sound. In the present specification, the embodiments will be described in detail with reference to the drawings. In particular, the following embodiments of the invention may disclose a single electrode with a single pole. However, the technical characteristics, the implementation of the Laijiao transfer can also be applied to the bipolar electrostatic chuck, which is commonly known in the field. Figure 1 is a plan view of the invention in accordance with the present invention. Section of the electrostatic chuck of one embodiment

201120988 1W6493PA. Referring to FIG. 1, a 100 according to an embodiment of the present invention may include a substrate 110, a first insulating layer 12, an electrode layer (10), a first dielectric layer 150, and a second dielectric. Layer 16〇 and a connection ^丨7〇. In one embodiment, the first insulating layer 12 and the first dielectric reed comprise a thermal spray-coated layer, and the layer has an amorphous structure. The second dielectric layer (10) may comprise a thermal spray layer and a thermal spray layer having a crystalline structure. Therefore, the electrostatic chuck can be covered by multiple layers. This multilayer includes an amorphous hot money layer to thermally spray the layer. The combination of amorphous and crystalline thermal spray coatings in multiple layers allows the electrostatic force of the electrical chuck 1GG to provide sufficient dielectric constant and high volume resistance (volume reslst) to improve the electrical characteristics of the electrostatic chuck (10). In particular, the first insulating layer 12A for electrically insulating the substrate 11 and the electrode layer 14A may include an amorphous age (four), thereby improving the volume resistance and increasing the electrical insulating properties due to the amorphous structure. The base 110 may have a flat or cylindrical shape and may have a size corresponding to the object to be processed, and the object may be, for example, a base b. That is, the base 110 may have an equal or larger size than a substrate used in a semiconductor device or a flat panel display device. . For example, the substrate 110 may comprise a metal such as aluminum (A1). Further, the substrate 110 may further include a metal layer coated on the substrate 11A. The first insulating layer 120 may be located on the substrate 11A. For example, the first insulating layer 120 may be located on a portion of the surface above the substrate 11'. For example, the first insulating layer 120 may have an amorphous structure and may be formed by a thermal spraying process using the first powder. That is, the first powder can be provided to form an amorphous thermal spray coating. For example, the first powder can include oxidation

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TW6493PA Crude or alumina coarse particles having an average diameter of from about 2 microns to about 6 microns. In particular, the first powder may comprise coarse particles obtained from a slurry of the first slurry and the second slurry. The first slurry may include a plurality of yttria (Y203) particles having a diameter of about 0.01 μm to about 2 μm for uniformly dispersing the first dispersant of the cerium oxide particles, and bonding the first binder of the cerium oxide particles. With a first solvent. The cerium oxide particles, the first dispersing agent and the first binder are dissolved in the first solvent. The second slurry may include a plurality of alumina (A1203) particles having a diameter of about 0.5 μm to about 2 μm, a second dispersant for uniformly dispersing the alumina particles, and a second binder for adhering the alumina particles. With a second solvent. The aluminum oxide particles, the second dispersing agent and the second binder are dissolved in the second solvent. The weight ratio of cerium oxide to aluminum oxide in the slurry mixture ranges from about 1 · 0.4 to 1.1. The first powder will be described in detail herein. The first insulating layer 120 may have a thickness of about 4 Å to about 600 μm, and the substrate 110 and the electrode layer 14 电 may be electrically insulated from each other. If the first insulating layer 120 can have a thickness of less than 4 Å, although there is sufficient volume resistance, the dielectric withstanding voltage of the first insulating layer 12 可 can be significantly degraded, which will result in the substrate 11 〇 and the electrode The electrical insulation between layers 140 is degraded. The first insulating layer 12 can have a high volume resistance due to the amorphous structure. For example, the volume resistance of the first insulating layer 120 can be improved to about 1 〇h ohm by centimeter (Q.cm) by an additional filling procedure for filling the porosity of the thermal sprayed layer (p〇r〇si ty). ) to approximately 1015 ohms. centimeters (Ω.cm). The conventional volume resistance is approximately 1 〇 13 ohms and centimeters (Ω.cm). Further, the first insulating layer 12A may have an amorphous structure, and thus the void space in the first insulating layer 120 may be relatively small. Because 12 201120988

TW6493PA This '.th insulating layer 120' may have a relatively small porosity. For example, the first insulating layer 120 may have a porosity of less than about 2%, and preferably less than about 1%. In the present embodiment, the first insulating layer 120 may have a porosity of from about 0.5% to about 2%, preferably from about 0.5% to about 1%. Further, the first insulating layer 120 may have a surface roughness (Ra) of about 4 μm to about 8 μm, and thus has an adhesion strength of about UMPa and may also have a hardness of about 650 Hv. The adhesive layer 115 can be further disposed between the base 110 and the first insulating layer 120, and can be used as an adhesive between the base 110 and the first insulating layer 12A. The thermal expansion ratio of the adhesive layer 115 may be an average value of the thermal expansion ratio of the base 110 and the first insulating layer 120. Therefore, the adhesive layer 115 can be used as a thermal buffer of the substrate 11A and the first insulating layer 120 having different thermal expansion ratios. For example, the adhesive layer 115 can comprise a metal alloy such as a nickel-sand alloy and can have a thickness of from about 3 Å to about 50 microns and have a porosity of less than or equal to about 5%. The electrode layer 140 may be disposed on the first insulating layer 12 and generate an electrostatic force. For example, electrode layer 140 can be located on a portion of the surface above first electrode layer 12A. In particular, the electrode layer 140 can generate an electrostatic force in the dielectric of the first and second dielectric layers 150 and 160. Therefore, an electrostatic force can be applied to the upper surface of the second dielectric layer 160, and the substrate is fixed to the upper surface of the second dielectric layer 160 by electrostatic force. The electrode layer 14A may include a conductive material such as tungsten, and may be formed by a thermal spray process or a screen printing process. In the present embodiment, the 'electrode layer 140 may have a size of about 3 〇 to a large 13 201120988

TW6493PA is approximately 50 microns thick. When the Thunder electrode layer 140 can have a thickness less than about go, the electrode layer 140 & about the micro-methane m ^ due to the defect and porosity of the electrode layer 140 instead of bearing back 'is therefore an electrostatic card . 14Π -ra The chuck quality of the 1st plate has deteriorated significantly. When the electrode layer 140 may have a thickness greater than about 50 micrometers of the field js ιαπ ^ ^, an arc may be caused in the electrode layer 140. Accordingly, the electrode layer 14 can preferably have a thickness of from about 3 Å to about 50 microns. The page η 川 Π 0 is applied to the electrode layer 140. An insulating layer 120 is coupled to the electrodes. A high voltage power can be passed through the connector 11 through the substrate 11 and the first layer 140. Fig. 2 is a cross-sectional view showing the first embodiment of the connector of Fig. 1. Referring to Figure 2, the connector 170 according to an embodiment of the flute can include a terminal 171, a ridge, a rim 172, and a buffer layer 173. The joint 171 can extend through the base and the first insulating layer 120 and in contact with the electrode layer 140. The external power source (not shown) can apply power to the electrode layer 140 via the joint 171. Therefore, the base 11 and the first insulating layer 120 may include through holes (not shown) through which the joint m may pass. For example, the joint 171 can include a conductive material such as tungsten, molybdenum, and titanium. The insulator 172 can electrically insulate the connector ι 71 to the environment and can cover the connector 171. Therefore, the insulator 172 can be disposed between the joint 171 and the base 110 and between the joint 171 and the first insulating layer 12A. Further, when the central portion of the joint 171 can contact the electrode layer 140, the insulating layer 172 can be disposed between the electrode layer 140 and the peripheral portion of the joint 171. For example, insulator 172 can include a sintered ceramic body having a small porosity and good insulating properties. In addition, the insulator 172 can have a large

201120988 1 W64y^FA The thickness of the micron and approximately 01 micro_about 2 micro roughness to reduce arcing. A process towel is applied to the substrate on the electrostatic card Qq, at which temperature - thermal stress can be applied to the electrostatic chuck 1 (). The electrostatic chuck can be thermally expanded in the plasma program and the thermal expansion ratios of the substrate 110, the first insulating layer 12, and the insulator 172 can be different from each other, so thermal stress can be applied to each of the substrate 110 and the first insulating layer 12. 〇 and insulator 172. In particular, the 敎 stress may be the largest at the boundary portion between the insulator Π 2 and the kelong 〇 and the edge surface between the insulator 172 and the first edge layer 120. Due to the relatively small force of the insulator μ, thermal stress can be transmitted to the first insulation and thus rupture. Then, the rupture can continue to the first dielectric layer 15A and the second dielectric layer 160' so that the electrostatic chuck 1 ruptures. The buffer layer 173 is provided to cause thermal stress to cause damage to the electrostatic chuck 1 . The buffer layer 173 can cover the upper portion of the insulator 172. For example, the buffer layer 173 may be located on a portion of the boundary surface between the insulator 172 and the substrate 11A, the boundary surface between the insulator 172 and the first insulating layer 12A, and the insulator 172 and the electrode layer 14 On the boundary surface between. The buffer layer 173 may include ceramic. For example, ceramics may include alumina (A1203), oxidized (Y203), oxidized/oxidized (A1203/Y203), oxidized (Zr02), aluminum carbide (A1C), titanium nitride (TiN), nitrogen Aluminum (A1N), titanium carbide (TiC), magnesium oxide (Mg〇), calcium oxide (ca〇), cerium oxide (Ce02), titanium oxide (Ti02), boron carbide (BxCy), boron nitride (BN) , yttrium oxide (SiO 2 ), tantalum carbide (SiC), yttrium aluminum garnet (yag), mullite (Mullite), chaotic Ming (A1F3) and so on. The above compounds can be used alone or in groups 15 201120988

TW6493PA is used together. The buffer layer 173 can be formed by a thermal spray process. The buffer layer 173 may have a thickness of from about 100 microns to about 250 microns, preferably from about 150 microns to about 200 microns. When the buffer layer 173 may have a thickness exceeding 250 μm, the void space of the buffer layer 173 may be relatively large, and thus the crack tends to be generated in the buffer layer 173. Further, when the buffer layer 173 may have less than 100 μm, thermal stress is not sufficiently absorbed by the buffer layer 173. Accordingly, it is preferred that the buffer layer 173 can have a thickness of from about 100 microns to about 250 microns. Further, the buffer layer 173 may have a surface roughness of about 0.1 μm to about 2 μm, thereby reducing surface resistance and arcing in the buffer layer 173. The thermal stress in the electrostatic chuck 100 is generated at a high temperature in the plasma program, and the thermal stress can be sufficiently absorbed by the buffer layer 173 so that the electrostatic chuck 100 is not damaged by thermal stress. For example, when the electrostatic chuck 100 can be heated and the substrate 110 can be thermally expanded in a plasma program, the buffer layer 173 can absorb the thermal stress in the substrate 110 instead of the insulator 172. For example, the porosity of the buffer layer 172 may be equal to or excess of the porosity of the substrate 110, the first insulating layer 120, the first dielectric layer 150, and the second dielectric layer 160, thus improving the stress absorption efficiency of the buffer layer 173. Buffer layer 173 can have a porosity of from about 2% to about 10%, preferably from about 2% to about 7%. If the porosity of the buffer layer 173 may be greater than about 10%, the force of the buffer layer 173 may be insufficient and the buffer layer 173 may be separated from the insulator 172, the substrate 110, and the insulating layer 120. When the porosity of the buffer layer 173 may be less than about 2%, cracking may occur in the buffer layer 173. Further, when the buffer layer 173 has the pointed edge portion, the edge portion of the buffer layer 173 can be formed into a circular arc or a chamfer because the thermal stress can be concentrated 201120988

TW6493PA is at the edge of the buffer layer '173. Stress concentration on the edge portion of the buffer layer i73 generally causes cracking of the buffer layer 173. Figure 3 is a cross-sectional view showing a second embodiment of the connector in the second diagram. The connector 170 of the second embodiment may have substantially the same configuration and structure as the connector ι7 of the first embodiment of Fig. 2 except for the shape and arrangement of the components. Therefore, the description of the elements having the same functions in Fig. 3 can be referred to in Fig. 2, and any further details regarding the same functions and configurations will be deleted herein. Referring to Fig. 3, the connector 170 according to the second embodiment may include a joint 177, an insulator 178, and a buffer layer 179. The connector 177 can extend through the base 110 and the first insulating layer 120 and contact the electrode layer 140' so that power can be applied to the electrode layer 140 via the connector 177 by an external power source. The insulator 178 can be disposed between the base 110 and the joint 177, and can electrically insulate the base 110 and the joint 177 from each other. In particular, the insulator 178 may be disposed only between the base 110 and the joint 177, and not between the second insulating layer 120 and the joint 177. The buffer layer 179 is provided to reduce the damage of the electrostatic chuck 1 caused by thermal stress, and the buffer layer 179 includes the first buffer 179a and the second buffer 179b. The first buffer 179a extends along the surface of the insulator 178 and the upper portion of the joint 177. Therefore, the first buffer 179a may be located on a portion of the edge surface between the insulator 178 and the substrate 110, on the edge surface between the insulator 178 and the first insulating layer 120, and the edge surface between the joint 177 and the first insulating layer 120. on. Therefore, the thermal stress in the electrostatic chuck 100 can be borrowed 201120988

The TW6493PA is absorbed by the first buffer 179a. If the thermal stress is not sufficiently absorbed by the first buffer .179a, the second buffer 179b can supplement the thermal stress in the electrostatic chuck 1吸收. For example, when thermal stress is not completely absorbed by the first buffer 179a, cracking may occur at the edge surface ' between the substrate 110 and the insulator 178' and grow to the first and first dielectric layers 150 and 160. The second buffer 179b can absorb the residual thermal stress that is not absorbed by the first buffer 179a, so that the crack caused by the residual thermal stress can be prevented from growing to the first and second dielectric layers 150 and 160. For example, 'the' - the buffer 179b can be located around the upper portion of the insulator 1 μ. In the present embodiment, the second buffer 179b may be located on an edge surface between the insulator 178 and the first insulating layer 120, and a portion of the edge surface between the substrate HQ and the second insulating layer 120. As a result, both the first and second buffers 179a and 179b can be located on the edge surface between the insulator 178 and the second insulating layer 120. The second buffer 179b may have substantially the same structural configuration as the first buffer 179a except for the position in the electrostatic chuck 10 (10), such as composition, thickness, and surface roughness. Therefore, thermal stress can be concentrated on the edge surface between the insulator 178 and the base 11 (), and the first and second buffers 179 & 179b can be located on the edge surface between the insulator 178 and the substrate no. Therefore, the thermal stress in the electrostatic chuck can be absorbed twice, particularly at the edge surface between the insulator 178 and the substrate 11〇, thereby avoiding stress concentration and causing crack propagation due to thermal stress. Therefore, the durability of the electrostatic chuck 100 can be greatly improved, and the maintenance cost of the static chuck can be reduced. The second buffer 179b can be supplementally provided to the electrostatic chuck 1A, so those skilled in the art will recognize that the second buffer 179b can be deleted according to program requirements. 201120988

1W6493FA In the present embodiment, the base 110 may include a first tilt at the upper edge portion.

The inclined portion > such as + A - the upper surface of the insulator 178 may be lower than the base 110 of the substrate 110 may be disposed closer to the electrode layer 140 than the insulator 178, and the thickness of the key and the insulating layer 120 may be in the first region A is larger than the second area B. The first region A of the inner layer 120 of the flute can be defined as a region between the insulator 17 8 and the sapole layer 140, and the second region of the first insulating layer 120 — β 1疋Between the upper surfaces of the substrate, except for the inclined portion of the first insulating layer 120. Although the first insulating layer 120# density may be smaller than the first-region Α, the thickness of the first insulating layer 120 may be greater than the second region 第 in the first region, thereby compensating for the first The smaller density of the first region A of the insulating layer 120. Therefore, the leakage current of the first region A of the first insulating layer 120 can be sufficiently avoided due to its thick thickness, thereby avoiding an arc between the substrate 110 and the electrode layer 140. Further, since thermal stress is surrounded by the edge portions of the substrate 110 and the insulator 178, the first insulating layer 120 can sufficiently avoid breakage, thereby avoiding arcing between the substrate 11 and the electrode layer 14A. In an embodiment, the electrode layer 140 may also include a second inclined portion corresponding to the first inclined portion of the base no, so that the electrode layer 140 corresponding to the joint 177 may be recessed. As such, the first upper surface of the electrode layer 14 on the substrate 11A can be higher than the second upper surface of the electrode layer H0 on the joint 177. Therefore, the total thickness of the first and second dielectric layers 15A and (10) is greater in the third region C than the fourth region D. The first and second dielectric layers 15A and (10) of the third region C may define a region of the total dielectric layer on the joint m, and the fourth region D of the first and second dielectric layers 150 and 160 may define the substrate 11 The area of the total "electric layer" is therefore 'when high voltage power can be applied via connector 177

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TW6493PA is on the electrode layer 140. The substrate on the electrostatic chuck loo is spaced apart from the electrode layer 140 in the third region c, thereby avoiding discharge between the connector I and the substrate. Referring again to FIG. 1, the first dielectric layer 150 may be disposed on the electrode layer 140 such that the electrode layer 140 may be buried in the first dielectric layer 15A. Therefore, the electrode layer 140 can be covered by the first dielectric layer 150. For example, the first dielectric layer 150 may be disposed on the surface contour of the electrode layer 140 to be located on the first insulating layer 120. Therefore, the first dielectric layer 150 may be located on the electrode layer 140 and the first insulating layer 120. For example, the first dielectric layer 15 can be subjected to a thermal spray process using the first powder, and thus the first dielectric layer can have an amorphous structure. That is, the same powder can be used for the thermal spraying process to form the first dielectric layer 150 and the first insulating layer 120. For example, the first dielectric layer 150 can have a thickness of from about 100 microns to about 300 microns. Further, the first dielectric layer 150 may have a relatively low porosity' because the internal space of the first dielectric layer 15A may become smaller due to the amorphous structure. The porosity of the first dielectric layer 15 can be less than about 2%, more preferably less than about 1%. 5%至约1%。 In the present embodiment, the first dielectric layer 丨5 〇 of the aperture ratio may be in the range of about 0.5% to about 2%, more preferably, about 0.5% to about 1%. Still further, the first dielectric layer 150 may have a surface roughness (Ra) of from about 4 microns to about 8 microns, thereby having an adsorption strength of greater than about 14 MPa. The first insulating layer 15 can also have a hardness of more than about 650 Hv. The second dielectric layer 160 can be on the first dielectric layer 150, and the transferred substrate can be on the second dielectric layer 16A. For example, the second dielectric layer 160 may be located only on the surface of the first dielectric layer 15 or may be located on the substrate.

S 20 201120988

The TW6493PA 110, the surface on which the first insulating layer 120 is exposed, and the surface of the first dielectric layer 150. Therefore, when the first insulating layer 丨2 〇 and the first dielectric layer 15 〇 can be stacked on the substrate 110, the second dielectric layer 16 〇 can be disposed on the substrate 11 。. Therefore, the first dielectric layer 150, the first insulating layer 120 and the substrate 110 may be covered by the second dielectric layer 160, thereby reducing the first dielectric layer 150, the first insulating layer 120 and the substrate 11 caused by the plasma. hurt. For example, the second dielectric layer 16 can be formed by a thermal spraying process using a second powder, so the second dielectric layer 160 can have a crystalline structure. The second dielectric layer can comprise ceramic. For example, ceramics may include alumina (A1203), yttrium oxide (Y203), alumina/yttria (A1203/Y203), yttrium oxide (Zr02), stone resolving (A1C), titanium nitride (TiN) Niobium (A1N), titanium carbide (Tic), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (ce〇2), titanium oxide (Ti02), boron carbide (BxCy), boron nitride ( BN), cerium oxide (si 〇 2), cerium carbide (SiC), yttrium aluminum garnet (YAG), mullite (Muliite), aluminum fluoride (A1F3), and the like. The above compounds may be used singly or in combination. For example, the second dielectric layer 160 may have a thickness of from about 2 Å to about 400 μm. Further, the second dielectric layer ι6 〇 may have a higher porosity than the first dielectric layer 150 because of its crystalline structure. The porosity of the second dielectric layer 16A may range from about 3% to about 7%. Still further, the second dielectric layer 160 may have a surface roughness (Ra) of from about 3 microns to about 5 microns, thereby having an adsorption strength of greater than about 14 MPa. The second insulating layer 160 may also have a hardness of more than about 650 Hv. The first and second dielectric layers 150 and 160 can each have a thickness of between about 1 micron to about 300 microns and about 200 microns to 400 microns, with a total dielectric of the first and second dielectric layers 150 and 160. Constant view, total S. 21 201120988

The TW6493PA volume resistance is, for example, an insulation resistance of the first and second dielectric layers 150 and 160 and an adsorption force for fixing the substrate to the electrostatic chuck 100. When the total thickness of the first dielectric layer and the second dielectric layers 150 and 160, that is, the thickness of the dielectric body may be greater than about 500 micrometers, the substrate and the electrode layer are excessively separated from each other, so the substrate cannot be well fixed to The electrostatic chuck 100 is preferably so that the total thickness of the first and second dielectric layers 150 and 160 can be less than about 500 microns. In addition, when the second dielectric layer 160 may have a thickness of less than about 200 microns, the dielectric constant of the dielectric is insufficient to cause an electrostatic force to chuck the substrate because the dielectric constant is decisively crystalline. The second dielectric layer 160 is determined. Further, when the first dielectric layer 150 may have a thickness of less than about 100 micrometers, the volume resistance of the dielectric body is insufficient to cause an electrostatic force to attract the substrate because the volume resistance is decisively determined by the first medium having an amorphous structure. The electrical layer 150 determines. Thus, with the first dielectric layer 150 having a thickness greater than about 100 microns and the second dielectric layer 160 having a thickness greater than about 200 microns, the total of the first and second dielectric layers 150 and 160 The thickness cannot be greater than about 500 microns. For these reasons, the first dielectric layer 150 can have a thickness ranging from about 100 microns to about 300 microns, and the second dielectric layer 160 can have a thickness ranging from about 200 microns to about 400 microns. Therefore, the dielectric of the electrostatic chuck 100 can include a multilayer having an amorphous sprayed layer and a crystalline sprayed layer, thereby increasing the volume resistance of the electrostatic chuck 100 without reducing any dielectric constant. . For example, the first dielectric layer 150 may have a volume resistance of about 109 ohm centimeters (Ω·αη) to about 1011 ohm centimeters (Ω·αη), which is a volume resistance of a conventional crystalline thermal spray coating; The electrical layer 160 can have approximately 1 〇 13 ohms 22 201120988

Volume resistance of TW6493PA (Ω.cm), which is the volume resistance of a conventional amorphous thermal spray coating. Additionally, the dielectric of electrostatic chuck 100 can have a total volume resistance of approximately 1013 ohms. Therefore, the dielectric of the electrostatic chuck 100 may include a plurality of layers having a crystalline layer and an amorphous layer, which may increase the volume resistance of the dielectric without degrading the dielectric constant. The improvement in volume resistance can lead to an increase in the dielectric properties of the dielectric, thereby improving the overall electrical properties of the dielectric. In addition, the first insulating layer 120 may include an amorphous thermal sprayed layer having a good volume resistance to improve the overall volume resistance and electrical properties of the dielectric. A post-treatment can be performed on the first insulating layer 120 and the dielectric including the first and second dielectric layers 150 and 160. For example, a procedure of filling a different inner space with a filler may be performed on the first insulating layer 120 and the dielectric, and thus the void spaces and cracks in the first insulating layer 120 and the dielectric may be sufficiently filled. Filled up. The filling process can be performed simultaneously on the entire first insulating layer 120, the first dielectric layer 150, and the second dielectric layer 160. In addition, the filling process can also be separately performed on each of the first insulating layer 120, the first dielectric layer 150, and the second dielectric layer 160. The filler may comprise a resin such as acrylic vinegar based on > The volume resistance of the insulating layer 120 and the dielectric can be increased by a filling procedure. For example, the volume resistivity of the second dielectric layer 160 having a crystalline structure can be increased from about 1 〇 9 ohm centimeters to about 1011 ohm centimeters to about 1013 ohms by the filling procedure. Further, the volume resistance of the first dielectric layer 150 and the first insulating layer 120 having an amorphous structure can be increased from 1013 ohm centimeters to about 10 u ohm centimeters to about 1015 ohm centimeters by a filling procedure. Furthermore, the total volume resistance of the dielectric can also be increased from approximately 1013 ohms to approximately 1014 ohms by the filling procedure. 23 201120988

TW6493PA centimeters to approximately 1015 ohm centimeters. Therefore, the electrostatic chuck 100 having a multilayer structure of an amorphous layer and a crystalline layer, the volume resistance of the dielectric of the electrostatic chuck can be sufficiently increased under the dielectric constant without degradation, thereby reducing Leakage current and arc of the dielectric. Further, the insulating properties of the insulating layer can be sufficiently improved by the high volume resistance of the amorphous thermal spray coating. If the first dielectric layer 150 can include a crystalline thermal spray coating and the second dielectric layer 160 can include an amorphous thermal spray coating opposite to the configuration of the dielectric described above, the total volume resistance of the dielectric can also be Any deterioration in dielectric constant is improved. However, the amorphous structure may have more chance of cracking because the amorphous thermal spray coating has a relatively small coefficient of thermal expansion despite its high volume resistance. In addition, the amorphous structure may also have more chance of arcing due to an increase in dielectric constant. For these reasons, preferably, a crystalline thermal spray coating, rather than an amorphous thermal spray coating, can be placed on top of the electrostatic chuck 100. Accordingly, the second dielectric layer 160 including the crystalline thermal spray coating can be located on the first dielectric layer 150 including the amorphous thermal spray coating, and thus the crystalline thermal spray coating can be disposed on top of the electrostatic chuck 100. Fig. 4 is a cross-sectional view showing an electrostatic chuck in accordance with another embodiment of the present invention. The electrostatic chuck 200 shown in Fig. 4 has a similar structure and configuration to the electrostatic chuck 100 of Fig. 1, and the same reference numerals in Fig. 4 as those in Fig. 1 denote the same elements. Referring to FIG. 4, an electrostatic chuck 200 according to another embodiment of the present invention may include a substrate 110, a first insulating layer 220, a second insulating layer 230, an electrode layer 140, and a first dielectric layer. 150. A second dielectric layer 160 and a connector 170.

S 24 201120988

The TW6493PA 1 substrate 110 may have a flat or cylindrical shape and may have a size corresponding to the object being processed, and the object may be, for example, a substrate. For example, the substrate 110 may comprise a metal, such as aluminum (A1). Further, the substrate 11 may further comprise a metal layer coated on the substrate 11A. The first insulating layer 220 may be located on the substrate 11A. For example, the first insulating layer 220 may be located on a portion of the surface above the substrate ι1〇. The first insulating layer 220 may have an amorphous structure and may be formed by a thermal spraying process using the first powder. The first insulating layer 220 may have a thickness of more than about 1 〇〇 micron. Preferably, it has a thickness of about 1 〇〇 to 300 μm and the substrate 110 and the electrode layer 14 电 may be electrically insulated from each other. If the first insulating layer 220 may have a thickness of less than about 10,000 μm, the volume resistance of the first insulating layer 22 ‘ ' may be too small to electrically insulate the substrate 11 〇 from the electrode layer 140 from each other. Thus, the first insulating layer 220 can have a thickness of at least about 1 微米 microns. Further, the porosity of the first insulating layer 220 may be less than about 2%, and preferably, less than about 1%. In the present embodiment, the first insulating layer 220 may have a porosity of about 5% to about 2%, preferably about 0.5% to about 1%. Further, the first insulating layer 220 may also have a surface roughness (Ra) of about 4 to about 8 μm and thus have an adhesion strength of about 14 MPa and may also have a hardness of about 650 Hv. The second insulating layer 230 may be located on the first insulating layer 220. For example, the second insulating layer 230 may be applied only to the upper surface of the first insulating layer 220 by a thermal spraying process using the second powder, and thus the second insulating layer 230 may have a crystalline structure. The second insulating layer 220 may include ceramic. For example, ceramics may include alumina (A1203), yttrium oxide (Y203), alumina/oxidation 5 25 201120988

TW6493PA 钇(A1203/Y203), yttrium oxide (Zr〇2), aluminum carbide (A1C), titanium nitride (TiN), aluminum nitride (A1N), titanium carbide (TiC), magnesium oxide (Mg〇), oxidation Calcium (CaO), cerium oxide (Ce〇2), titanium oxide (Ti〇2), boron carbide (BxCy), boron nitride (BN), yttrium oxide (Si〇2), tantalum carbide (SiC), yttrium aluminum Garnet (YAG), mullite (Mullite), aluminum fluoride (A1F3), and the like. The above compounds may be used singly or in combination. The first insulating layer 230 may have a thickness of about 2 μm to about 4 μm and because the porosity of the second insulating layer 230 is greater than the porosity of the first insulating layer 22 because the second insulating layer has a crystalline structure. . For example, the first insulating layer 230 can have a porosity of from about 3% to about 7%. The second insulating layer 230 may also have a surface roughness (Ra) of from about 3 microns to about 5 microns having an adhesion strength of about 14 MPa and may also have a hardness of about 65 〇 Hv. When the second insulating layer 230 can be located on the first insulating layer 220 in the electrostatic chuck 200, the second insulating layer 230 can be modified to be located on the substrate 110, in particular, disposed on the substrate 110 and the first Between the insulating layers 22〇. That is, the first and second insulating layers 220 and 230 may together form an insulator between the substrate 110 and the electrode layer 14A, and the stacking order of the first and second insulating layers may be exchanged in the insulator. Therefore, the insulator for electrically insulating the substrate 11 〇 and the electrode layer 14 静电 in the electrostatic chuck 200 may include a plurality of layers in which a crystalline structure layer and an amorphous structural layer may be stacked to improve the electrostatic chuck 200. Volume resistance and insulation properties. The electrode layer 140 may be disposed on the second insulating layer 230 and generate an electrostatic force. For example, the electrode layer 140 may be located on a portion of the surface above the second insulating layer 23" "The electrode layer 140 may comprise a conductive material, such as tungsten (w) e 26 201120988

^ A dielectric layer 16 〇 llh, the field 1 ' 丨 Jr K w electrical layer 150 and 160 can be continuously located in the electrode layer w electrical function, the electrode layer 140 can be produced by the dielectric layer 150 can be The first powder is used and the second dielectric layer 160 can have a crystalline structure by using the second powder & 'so the first dielectric layer 150 can have an amorphous junction 160.

The dielectric body that generates an electrostatic force in the electric chuck 200 and the crystalline layer of the dielectric body of the non-曰曰-shaped thermal spray layer 8 can sufficiently improve the dielectric constant to generate an electrostatic force, and the amorphous layer of the dielectric body It can improve the volume resistance and insulation properties of the electrostatic card. The electrostatic chuck 2 has no reduction in volume, has an improved volume resistance, and has excellent insulation properties. Therefore, the "electrostatic chuck 200 can sufficiently avoid the damage caused by the leakage current" to improve the electrical characteristics of the electrostatic chuck 200. For example, the connector 170 can penetrate the base 110, the first insulating layer 220 and the second insulating layer 23, and thus contact the electrode layer ι4〇. High voltage power can be applied to the electrode layer 14 from an external power source. ★ The connector 17〇 in this embodiment may have substantially the same structure and configuration as the connector illustrated in FIGS. 2 and 3, except that the second insulating layer 230 may be additionally placed on the substrate i1G and the electrode layer. Between 14 (). Therefore, any detailed description about the connector 170 will be omitted. The insulation resistance of the electrostatic chuck of the present embodiment below and preferred experiments can be compared with conventional electrostatic chucks. The conditions used in the experiments carried out were the same as those used in the conventional electrostatic chucks of the present embodiment. The dimensions of the electrostatic chuck are approximately 27 201120988 TW6493PA 300φ and 45T, and in the range of approximately 1050 microns, in the dielectric; 2 950 microns to approximately _ microns. The application of micrometers is often from about 500 tex to about ** card:: the unit step of the electrode layer power. Specifically, a schematic diagram of the relationship between the power of the electrostatic chuck is shown by a picture of about 500 volts. Resistor /, applied to the electrostatic chuck In Fig. 5, the edge resistor of this embodiment has a conventional dielectric body which is at least approximately an absolute crystal layer of the chuck 1:: dielectric. The delay is greater than the singularity because the insulation resistance is improved, and the decrease from the static component is made, and therefore the leakage current of the static ram card 100 can be prevented. + Electricity generated by leakage current In particular, the traditional electrostatic chuck has a thunder of about 2,500 volts of power: 1 for a static mine + about μ from about 500 gangs, the pressure change is relative to this embodiment. The feeling of the disk. According to the experimental results, the traditional electrostatic card is about 5530 Ω Ω 'when the power of about _ volts is 2 layers; the insulation resistance is increased to at most about 5 biliary, when the sophomore:: special power is applied to the electrode electrostatic card in the traditional electrostatic chuck The insulation resistance of the disk is measured to be about 56 nautical, about 1000 = 65 volts when the power is applied to the electrode layer of volts in the large "volts and leaks volts. Also disagree, the higher the power of reading, in the traditional electrostatic card The leakage current is more, in the -like 28 201120988

The current under the TW6493PA resistor is proportional to the voltage. Therefore, the arc generated by the leakage current in the voltage chuck of the electric power is conventionally high, and the voltage, the power of the conventional electrostatic chuck is special: this is the opposite of the electrostatic chuck of the present embodiment. The voltage change to the power of approximately volts is relative to the electrostatic chuck just described in Example k. A power of about 500 volts is applied to the electrode layer, and the electrostatic card:: the large resistance starts at about 149_; when the voltage of the voltage is about == electrostatic chuck 100 + electrode layer, the insulation resistance is greatly increased to 24600 Ω, which increases The initial insulation resistance is about two. The insulation resistance of the two electrostatic chucks is about 182_ and (iv) 嶋, when the power is applied to the electrode layer, the volts are about volts, volts and volts. That is, although the voltage of the electric power increases, the leakage current is minimized because the insulation resistance continuously increases as the voltage of the electric power increases. Therefore, although the voltage of the electric power is increased in the electrostatic chuck, the arc due to the leakage current can be sufficiently avoided. Therefore, the electrostatic chuck 1 or 2 according to the embodiment of the present invention may include a plurality of dielectric bodies or insulators having a stacked crystal layer and an amorphous layer, thereby increasing the insulation resistance of the dielectric or insulator. Therefore, the leakage current in the electrostatic chuck 1GG or 2GG can be sufficiently reduced, and the arc due to the leakage current can be greatly reduced in the electrostatic chuck 1 or 2〇〇. Fig. 6 is a view showing the relationship between leakage current and operation time, and leakage of helium and operation time when a conventional electrostatic chuck and an electrostatic chuck of the present invention are operated. Figure 6 shows more clearly at the same operating time, electrostatic chuck

S 29 201120988

The leakage current in the TW6493PA is lower than the leakage current of the conventional electrostatic chuck. The temperature of the substrate is generally increased by the plasma source used to fabricate the semiconductor device to apply the plasma device, and the high temperature of the substrate causes many different process defects. Therefore, a cooling gas such as helium gas is often supplied through the through holes to the back surface of the substrate, and thus the substrate can be cooled to a desired temperature. In this case, the through holes pass through the substrate, insulator and/or dielectric in the electrostatic chuck. The amount of cooling gas is often determined by the chuck quiality of the electrostatic chuck. The adsorption quality of the electrostatic chuck means the degree of adhesion of the electrostatic chuck to the substrate. When the electrostatic chuck has good adsorption quality, the gap space between the substrate and the electrostatic chuck is sufficiently sealed and the environment is isolated, and the helium gas does not leak from the gap space between the substrate and the electrostatic chuck. In other words, the better the adsorption quality, the less the amount of helium leaks. Conversely, when the electrostatic chuck has degraded adsorption quality, the gap space between the substrate and the electrostatic chuck 100 cannot be sufficiently sealed and insulated from the environment, and the helium gas is likely to be separated from the gap between the substrate and the electrostatic chuck. Space leaks out. That is to say, the worse the adsorption quality, the more the amount of helium leaks. The experimental results of Fig. 6 show that the amount of helium leakage in the electrostatic chuck 100 is much smaller than that of the conventional electrostatic chuck, and the results show that the adsorption quality of the electrostatic chuck 100 can be much superior to that of the conventional electrostatic chuck. In addition, the amount of gas in the conventional electrostatic chuck jumps with the passage of the operation time, and the amount of helium in the electrostatic chuck 100 is consistent with the passage of the operation time. That is to say, the amount of helium leakage is much higher in the electrostatic chuck 100 than in the conventional electrostatic chuck. Therefore, the experimental results in FIGS. 5 and 6 show that the leakage current and the helium gas leakage in the electrostatic chuck 100 are far less than those of the conventional electrostatic chuck, which shows that the adsorption quality of the electrostatic chuck 100 can be far superior to the conventional static electricity. Chuck adsorption

201120988 IW6493PA Product:,. The uniformity of the adsorbent f of the 'in step 15 and the electric chuck _ in the figure 6 is much better than the traditional static electricity. The 7th drawing includes the i-th image, the electric thief, the thief, the secret m ^ The side scale of the electrostatic plasma application device with the electrostatic chuck in the figure shows a schematic diagram of the etching amount of the application electric device of the mB electrostatic chuck.栝Traditional The first thunder of the electrostatic chuck 100 The young plasma etching device has the same program conditions as the mth device with a conventional electrostatic chuck. The substrates are operated in first and second plasma etching apparatus, respectively. Next, the etching area of each substrate is divided into a plurality of matrices, and the etching amount of each matrix of the substrate is measured and plotted in Figs. 7A and 7B. The plasna space has a height of about 120 cm (mm) and an internal pressure of about 250 mTorr for each of the first and second plasma remnant devices. Approximately 5,000 watts of power is applied to each of the plasma etching devices to produce a plasma etch source. Further, sulfur hexafluoride (SF6) gas of about 400 mTorr and oxygen of about 7000 mTorr are respectively supplied to the plasma etching apparatus as a gas source for the plasma etching process. The amount of etching of the first plasma etching apparatus. Table 1 1 3 3 4 5 1 12308 12975 13450 13667 12831 2 12434 13071 13942 13887 14205 3 12563 13219 13675 13950 14085 4 12332 13212 13788 13634 13809 5 12448 13004 13242 13510 13016 The uniformity of the average silver engraving program (Uniformity) λ 31 201120988

TW6493PA

13290.7 7.15% J Etching amount of the second plasma etching apparatus. Table 2 1 2 3 4 5 1 10261 11557 12407 11961 11856 2 8851 9824 10942 9505 11956 3 10254 10077 10649 10717 12766 4 8729 9047 10450 8953 11930 5 10269 11262 12165 11694 12032 Uniformity of the average silver engraving etching procedure (Uni forty ty ) 10804.7 18.8% The uniformity of the etching procedure is calculated by equation (1). The uniformity of the money engraving program = (maximum silver engraving - minimum money engraving) / (maximum amount of money + minimum button engraving) - equation (1). The experimental results in Tables 1 and 2 above are visually drawn in Figures 7 and 7. Referring to Figures 7 and 7, the average etching amount in the first plasma etching apparatus is about 13290.7, and the average etching amount in the second plasma etching apparatus is about 10840. Therefore, the experimental results of the first plasma etching apparatus including the electrostatic chuck 100 show superior performance to the second plasma etching apparatus including the conventional electrostatic chuck. Furthermore, the uniformity of the etching process in the second plasma etching apparatus is about 18.8%, and the uniformity of the etching procedure in the first plasma etching apparatus is about ««% 32 201120988

i W04yjFA 7. 15% 〇. Therefore, the experimental results of the first plasma shoe engraving device including the electrostatic chuck 100 also show superior uniformity than the second plasma remnant device including the conventional electrostatic chuck. Therefore, the reliability of the etching process can be improved by using a more uniformity in which the electrostatic chuck substrate can be etched in the plasma etching apparatus. The following 'first powder for the amorphous thermal spray coating layer' will be described in detail. Fig. 8 is a photograph showing the molecular structure of the first powder used to form the amorphous thermal sprayed layer of Fig. 1. Referring to Figure 8, the first powder can be obtained from a mixture of the first and second liquids. The amount of "slurry" below may be described on a weight percent basis. The first slurry may include a plurality of yttria (Y203) particles, a first dispersant, a first binder, and a first solvent. The oxidized particles may have a diameter of from about 0.1 to about 2 microns. When the cerium oxide particles have a diameter of less than about 〇.〇丨micrometer, the average diameter of the first powder is too small that the particles of the first powder have coarse-grained particles, which are difficult to have a spherical shape. Conversely, when the cerium oxide particles have a diameter greater than about 2 microns, the average diameter of the cerium oxide particles is too large to cause agglomeration' and thus the average diameter of the coarse particles of the first powder is extremely increased. The first dispersant uniformly disperses the oxidized particles in the first mash. For example, the first dispersant may comprise a base material. The base material may include, for example, a carboxy-based material, an ester-based material, an amide-based, or the like. These can be used singly or in combination. The pH of the first dispersant may range from about 1 Torr to about 丨2, and more preferably, about 33

201120988 TW6493PA is 10: The second dispersant may comprise a base material, and the amount of the first dispersant in the negative-slurry of the cerium oxide particles may range from about 3%.3% to more than about 1. When the amount of the first-dispersant can be processed in the first slurry, a spherical "day/(four) dry jetting procedure is formed (the Liaomachi ^ ^ ^ is reversed, when the amount of the first dispersant is in the first slurry) 0.3〇/〇' The first public liquid may have excessive viscosity. - Forging liquid is in the first - (four) + chemical bonding oxide filament. The first: the first combination, the amount can be from about 2% to about 3% of the granules Difficult; 'The S of the agent may be less than about 2% in the first slurry, the oxidized knot and thus the first powder is difficult to form a sphere, when the first; the knot: = summer is greater than about 3%, the first liquid may have an excessive viscosity The agent may include a vinyl-based material, an acryl-based material, etc. The first slurry may include a residual amount of the first solvent (residual oxidation peak, first-minute (four) and - the binder is dissolved in 8. When the first binder can comprise an ethylene based material, the first solvent can comprise an organic base material, such as ethanol. Conversely, when the first binder can comprise - propylene based Material, the first solvent can include the aqueous phase bottom material ° ethylene based (four) can include ethylene vinyl acetate (four) (4) valence vinyl acetate) resin, polyvinyl chloride resin, polyvinyl pyrr〇lidine, polyvinyl alcohol resin (p〇lyvinyi alcohol) resin, polyvinyl butyral (p) 〇lyvinyl ^ statin "), polyvinyi acetate, polyvinyl ether, etc. These may be used singly or in combination. In addition, 34 201120988

1 W5493FA propylene-based materials may include methacry 1 vinegar, polymethyl methacrylate resin, polyacrylonitrile resin, butyl acrylate Normai butylacryl resin, polystyrene polymethyl methacryl resin, and the like. These can be used individually or in combination. The first slurry can be formed by a ball mill. The amount of dry composition in the first slurry can be proportional to the amount of the first dispersant. When the amount of the dry composition is less than about 20% in the first slurry, the cerium oxide particles are scarce in the first slurry so that the diameter of the coarse particles of the first powder is extremely small. Conversely, when the amount of dry composition can be greater than about 30% in the first slurry, the first slurry can have a high viscosity such that it is difficult to properly control the procedure for making the first powder, and the first powder can form a non-spherical shape. Thus, the amount of dry composition in the first slurry can range from about 20% to about 30%. The second slurry may include a plurality of oxidized particles, a second dispersant, a second binder, and a second solvent. The oxidized particles may have a diameter of from about 0.5 microns to about 2 microns. When the oxidized particles have a diameter of less than about 0.5 μm, the average diameter of the first powder is too small and the first powder is difficult to form spherical coarse particles. In contrast, when the alumina particles have a diameter larger than about 2 μm, the average diameter of the alumina particles is so large that the alumina agglomerates, and thus the average diameter of the coarse particles of the first powder is extremely increased. The second dispersant can uniformly disperse the alumina particles in the second slurry. For example, the second dispersant may include acid materials. A basic material such as ruthenium may include a carbon-based (carb〇Xyl-baSe(J) material, an ester group)

S 35 201120988

TW6493PA (ester-based) material, amino material (amide_based), etc. These can be used individually or in combination. The second dispersant may have a pH of from about 2 to about 4, and more preferably, about 2, when the second dispersant may include an acid material, and the aluminum oxide particles have a positive surface charge. The amount of the second dispersant in the second slurry may range from about 0.3% to about 2%. When the amount of the second dispersant may be greater than about 0.5% in the first slurry, it is difficult for the second slurry to form a spherical shape by a dry injection process. Conversely, when the amount of the second dispersant can be less than about 0.3%, the second slurry can have an excessive viscosity. The second binder can chemically bond the alumina particles in the second slurry. The amount of the second binder in the first slurry may range from about 2% to about 3%. When the amount of the first binder is less than about 2% in the second liquid, the alumina particles are difficult to bond to each other and thus the first powder is difficult to form a sphere, when the amount of the second binder is greater than about 3% 'second The slurry can have an excessive viscosity. The binder-substrate may have substantially the same structure and group as the first binder, and the first slurry may include a residual amount of the second solvent in which the alumina particles, the second dispersant and the second binder are dissolved. . The first solvent may have substantially the same structure and configuration as the first solvent, and thus the further description of the second slurry will be omitted. The second slurry may be formed by a ball mill. The amount of dry composition in the second polymer can be proportional to the amount of the second dispersant. When the amount of the dry composition is less than about 20% in the second slurry, the alumina particles are lacking in the second slurry so that the size of the coarse particles of the first powder can be extremely small. Conversely, when the amount of dry composition can be greater than about 30% in the second slurry, in the second liquid 36

201120988 TW6493PA can be made with high viscosity, making it difficult to properly control the manufacture of the first powder. The first powder can form a non-spherical shape. Thus, the order in the second slurry can range from about 20% to about 30%. The amount of t composition The mixture of the first and second slurries has a cerium oxide to oxygen ratio of from about 1:9 to about 4:6, and the weight of the particles in the first powder may be more than that of the cerium oxide particles. Therefore, the material properties of alumina, the aluminum is used in the thermal sprayed layer of the first powder, and thus the first to be dominant coating has the characteristics of high mechanical strength and low adsorption strength. The weight ratio of cerium oxide to aluminum oxide in the mixture of the first phase and the second slurry is in the range of 2 = 8:2 to about 9:1, and in the first powder, the cerium oxide particles are more than the alumina particles. Therefore, the material properties of cerium oxide can dominate the use of the thermal sprayed layer of the first powder and thus the thermal spray coating using the first powder has the characteristics of low mechanical strength and low adsorption strength. Therefore, the weight ratio of cerium oxide to aluminum oxide in the mixture of the first and second liquids is in the range of about 5:5 to about 7:3, more preferably about 5:5. The first powder may comprise coarse particles, and the coarse particles may be obtained from a mixture of the first and second slurries' coarse particles having an average diameter of from about 20 microns to about 60 microns, more preferably from about 30 microns to about 4 microns. When the average diameter of the first powder may be less than about 20 microns, the size of the first powder is too small to make it difficult for the first powder to reach an object in the application of the plasma device. Conversely, when the average diameter of the first powder is Above about 60 microns, the size of the first powder is too large to cause the first powders to agglomerate with one another and thus the first powder is difficult to evenly sprinkle onto the object in the application of the plasma device. Figure 9 is a flow chart showing the unit procedure steps of the method for forming the first powder in Figure 8. 201120988

TW6493PA Referring to Fig. 9, the first slurry can be formed by a ball mill to form a first powder (step S110). The first slurry may comprise a plurality of cerium oxide particles having a diameter of from about 0.01 micron to about 2 microns, the first dispersing agent for uniformly dispersing the cerium oxide particles, the first binding agent for binding the cerium oxide particles, and The particles, the first dispersant and the first binder are dissolved in the first solvent. If the oxidized particles are sufficiently bonded to each other, the first binder may not be included in the first slurry, as is known in the art. Figure 10 is a flow chart showing the method for forming the first slurry in Figure 9. Referring to Fig. 10, a first solvent is prepared (step S111) and the cerium oxide particles having a diameter of about 0.01 μm to about 2 μm are supplied to the first solvent (step S112). Thereafter, the first dispersant may be supplied to the first solvent, and the concentration of the first dispersant in the first slurry is in a range of about 0.3% to about 0.5% (step S113), and the first binder may provide To the first solvent, the concentration of the first binder in the first slurry is in the range of about 2% to about 3% (step S114). The cerium oxide particles may have a negative surface charge due to the first dispersant. The order in which the cerium oxide particles are supplied, the order in which the first dispersing agent is supplied to the first solvent is interchangeable, as is known in the art. Thereafter, the cerium oxide particles, the first dispersing agent and the first binder may be mixed with the other in a first solvent by a ball mill to form a first slurry. Referring again to Figure 9, the second slurry can be formed by a ball mill. (Step S120) The second slurry may include a plurality of alumina particles having a diameter of about 0.5 μm to about 2 μm, and a second dispersant for uniformly dispersing the alumina 38 201120988 TW6493PA particles, 'width 1, / tan The ~ binder is used to bind the alumina particles, and the alumina particles, the bulk metal, and the first binder are dissolved in the second solvent. If the oxidized particles are sufficiently bonded to each other, the second binder may not be included in the second slurry, which is known to those of ordinary skill in the art.芳程| U diagram shows the method for forming the second slurry in Fig. 9: Referring to Fig. 11, preparing a second solvent (step 8121) and alumina = sub-eight has about 〇 5 μm to about 2 The diameter of the micron can be supplied to the second + agent C step green S122). Thereafter, the second dispersant may be supplied to the second solvent, and the concentration of the second dispersant in the first liquid is about 0.3% to about % of the range (step S123), and the second binder may be supplied to the first The concentration of the first binding agent in the poly-liquid is approximately in the range of 2% to 3% (step S124). The alumina particles may have a positive surface charge due to the second dispersant. The order in which the oxidized filaments are supplied, the order in which the second dispersant is supplied to the second solvent, and the second agent are exchangeable, as is well known in the art. Next, the alumina particles, the second dispersing agent and the second binder may be mixed with the other by a ball mill in a second solvent to form a second slurry. Referring again to Fig. 9, the first slurry and the second slurry are mixed with each other, and the weight ratio of cerium oxide to aluminum oxide is about 7:3 to about 5:5, that is, 1:0.4 to 1, thereby forming a slurry mixture. (Step sl3〇). Fig. 12 is a schematic view showing a method for forming the slurry mixture in Fig. 9. Referring to Figure 12, the oxidized particles have a negative surface charge that can be attracted to the oxidized cerium particles by electrostatically attracting alumina particles with positive surface charge.

TW6493PA Sub-alumina and alumina particles "." Referring again to Figure 9, the slurry mixture can be formed into coarse particles having oxidized particles and oxidized particles by a dry spray process (step S14 0 ). The slurry mixture can be sprayed at elevated temperatures, for example, about 8 〇. c to a spray chamber of approximately 1500 °C. Spraying at a high temperature increases the hardness of the coarse particles of the first powder. For example, the slurry mixture can include coarse particles having cerium oxide and aluminum oxide and can have an average particle diameter of from about 20 microns to about 60 microns. The unit steps of steps S110 through S140 are used to form the first powder shown in Figure 9, which can be carried out under atmospheric air, hydrogen, oxygen, nitrogen, and a mixture. Hereinafter, a method of manufacturing an electrostatic chuck according to the present embodiment will be described in detail. The electrostatic chuck of Fig. 4, including the connector of Fig. 3, can be a preferred description herein for making an electrostatic chuck. Figure 13 is a flow chart showing the steps of a unit procedure of a method of manufacturing an electrostatic chuck in accordance with an embodiment of the present invention. Referring to Figures 3, 4 and 14, the substrate 11〇 is prepared (step 821〇) for fabricating the electrostatic chuck 2 of Figure 4 (the base 11 has a flat or cylindrical shape. The base 110 may include a through hole) The connector 17 can be penetrated and the connector 17 can be prepared (step S22A), independent of the base 110. The configuration of the prepared connector 170 can be such that the connector 177 is wrapped around the insulator 178 and the first buffer 179a may be disposed on the upper portion of the insulator 178. Thereafter, the connector 170 may be inserted into the through hole of the base HQ (step $230) 201120988 iw〇4yjm The dead base 11G and the connection ^ 170 may self-align with each other in the through hole. The buffer 179b may be formed in a first edge region between the first insulating layer 22 and the insulator 78, and in a second edge region between the first insulating layer 22 and the substrate ιι. Then, the adhesive layer 115 may be formed. On the upper surface of the substrate 11 , except for the connector 170 and the second buffer (step S24 〇), the adhesive layer 115 may have an adhesive function between the substrate 110 and the first insulating layer 22 , and may include a metal alloy such as Is a nickel aluminum alloy. The first insulating layer 220 can be formed on The body 11 is coated with an adhesive layer 115 (step S250). For example, the first insulating layer 22 can be formed by a thermal spraying process using the first powder, and thus the amorphous thermal spray layer can be formed. As the first insulating layer 220 on the substrate 110, the first insulating layer 220 may be formed on the entire surface or a portion of the upper surface of the substrate 110, and the adhesive layer 115 may be coated thereon. The first powder may be included with the eighth The same structure and configuration as explained in Fig. 12, therefore any further detailed description on the first powder will be omitted. The thermal spray procedure may include an atmospherically plasma spray coating procedure, fast A rapid oxygen-fuel thermal spray coating process, a vacuum plasma spray coating process, and a kinetic spray coating process. The second insulating layer 230 may be formed on the first insulating layer 220 by using a second powder thermal spraying process (step S260). Therefore, the second insulating layer 230 may be formed on the entire surface of the first insulating layer 220, and Crystal thermal spray coating may be formed on the first insulating layer 230. For the second insulating layer 201 120 988 220

TW6493PA For example, the first insulating layer 230 may include Tauman. For example, the ceramics may include alumina (A1203), yttrium oxide (Y203), alumina/yttria (A1203/Y203), zirconia (Zr02), aluminum carbide (A1C), titanium nitride (TiN). ), aluminum nitride (A1N), titanium carbide (TiC), magnesium oxide (MgO), oxidation #5 (Ca0), cerium oxide (Ce02), titanium oxide (Ti02), boron carbide (BxCy), boron nitride ( BN), yttrium oxide (Si〇2), lanthanum carbide (SiC), yttrium aluminum garnet (YAG), mullite (Mullite), aluminum fluoride (A1F3), and the like. The above compounds may be used singly or in combination. The first and second insulating layers 220 and 230 can be thermally sprayed by, for example, an atmospherically plasma spray coating process, a rapid oxyfuel spray process (rapid 〇Xygen_fuel thermal spray coating process) ), a vacuum plasma spray coating process, and a kinetic spray coating process, except for the powder used to form the respective thermal spray coating. Therefore, the upper surface of the second insulating layer 230 can be further flattened by the planarization process. Further, the second insulating layer 230 of the corresponding connector 170 may be partially removed in the planarization process' and thus the upper surface of the connector 170 may be exposed. If the electrostatic chuck 1 in FIG. 1 is used, only the first insulating layer 120 does not include the second insulating layer and may be formed between the substrate 110 and the electrode layer 140. The connector 170 may also be used to flatten the first insulating layer. The 12-inch flattening procedure was exposed. The electrode layer 140 may be formed on the second insulating layer 230 (step S270). The electrode layer 140 may be formed on a portion of the upper surface of the second insulating layer 230 and may include a conductive material such as tungsten. That is, the electrode layer 140 42 201120988 1 W64y3m may be stacked on the second insulating layer 230 and have a size smaller than that of the second insulating layer 230. The first dielectric layer 150 may be formed on the second insulating layer 230 and the electrode layer 140 by using a thermal spraying procedure of the first powder, and thus the amorphous thermal spray layer may be formed on the electrode layer 140 as a A dielectric layer 150 (step S280). The first dielectric layer 150 may be coated on the entire surface of the second insulating layer, and the electrode layer 140 may be formed on the second insulating layer, and thus the electrode layer 140 may be completely covered by the first dielectric layer 150. The first dielectric layer 150 can be formed by a thermal spray process using the same first powder as the first insulating layer 220. Thereafter, the second dielectric layer 160 can be formed on the first dielectric layer 150 by a thermal spraying process using the second powder, and thus the crystalline thermal spray layer can be formed on the dielectric layer 150 as a second dielectric layer. The electric layer 160 (step S290). In particular, the second dielectric layer 160 may be formed on the upper portion of the electrostatic chuck 200 and the first dielectric layer 150. That is, the edge portion of the base 110 cannot be coated with the first dielectric layer 150, and the side surface of the base 110, the side surfaces of the first and second insulating layers 220 and 230, and the side surface of the first dielectric layer 150 may be A second dielectric layer 160 is applied. Therefore, all exposed surfaces of the substrate 110, the first and second insulating layers 220 and 230, and the first dielectric layer 150 may be covered by the second dielectric layer 160. In such a situation, between the substrate 110 and the second dielectric layer 160, between the first and second insulating layers 220 and 230 and the second dielectric layer 160, and between the first dielectric layer The spray boundary surface between 150 and the second dielectric layer 160 can create cracks and arcs. For these reasons, the side surfaces of the first and second insulating layers 220 and 230 and the first dielectric layer 150 and the side surface of the substrate 110 may also be covered by the second dielectric layer 160.

TW6493PA cover. The second dielectric layer 160 may be formed as the second insulating layer 230 by the same thermal spraying process using the same powder. In addition, the thermal spray process for forming the second dielectric layer 160 may also include an atmospheric ly plasma spray coating process and a rapid oxygen-fuel thermal spray process. a coating process), a vacuum plasma spray coating process, and a kinetic spray coating process, except for forming a powder of a respective thermal spray coating, for example, A thermal spray process is performed to form the first insulating layer 220. The second dielectric layer 160 can also be planarized by a planarization process, and thus the bumps on the surface above the second dielectric layer can be removed. Then, a filling process can be performed on the dielectric including the first and second dielectric layers 150 and 160, and the first and second insulating layers 220 and 230 are included on the insulator (step S300). Therefore, various internal spaces of the dielectric body and the insulator can be filled with the filler. For example, the void spaces and ruptures in the dielectric and insulator can be filled by the filler, thereby increasing the volume resistance of the dielectric and insulator. The filler may include a resin such as an acrylic resin. When the present embodiment discloses that the filling procedure can be performed after the dielectric and the insulator are formed, the sequence and time according to the program conditions and the required filling procedure and the "electric body and the insulator" Forming systems are interchangeable, as is known to those of ordinary skill in the art. For example, 'the first filling procedure can be performed on the insulator after the first and second insulating layers 220 and 230; and the second filling procedure is performed on On the dielectric body, after the first and second dielectric layers 15 and 16 。. Otherwise, 44 201120988

The I WMWHA filling process can be performed three to four times between the first insulating layer 220, the second insulating layer 230, the first dielectric layer 150, and the second dielectric layer 160. That is, the filling process may be performed between each of the first and second insulating layers and the first and second dielectric layers, or the first and second insulating layers and the first and second dielectric layers. Executed on the combination. In addition, the planarization process can also be performed on each of the adhesive layer 115, the first insulating layer 220, the electrode layer 140, the first dielectric layer 150 and the second dielectric layer 160, and the second insulating layer 230. Usually known to the knowledge. The method of manufacturing the electrostatic chuck 200 disclosed in the above preferred embodiments, wherein the insulator may comprise a plurality of layers having first and second insulating layers 220 and 230. As shown in Figure 4. However, the insulator in the electrostatic chuck 100 may include a single first insulating layer as shown in FIG. 1 except that the process step S260 of forming the second insulating layer 260 may be manufactured in the same manner as described above, which is a common knowledge in the field. Known. According to an embodiment of the present invention, the dielectric of the electrostatic chuck may include a plurality of layers including an amorphous thermal spray coating layer and a crystalline thermal spray coating layer so that no dielectric constant is degraded due to the amorphous thermal spray coating layer. Increase the volume resistance of the dielectric. Therefore, the leakage current of the electrostatic chuck can be minimized and thus the crack due to the leakage current can also be minimized in the electrostatic chuck. Therefore, the overall electrical characteristics of the electrostatic chuck can be greatly improved by the multilayer dielectric. In addition, the insulator of the electrostatic chuck may also include an amorphous thermal spray coating because the amorphous thermal spray coating improves the insulation resistance between the substrate and the electrode layer in the electrostatic chuck, thereby increasing the volume resistance of the insulator.

S 45 201120988

The TW6493PA is more advanced. The buffer layer can be formed at the high voltage applied contact area of the power of the joint and thus the crack due to thermal stress can occur in the contact area of the joint. ^This, the electrostatic chuck can have improved durability and operational life, and thus the maintenance cost of the electrostatic chuck can be greatly reduced. Accordingly, the electrostatic chuck provided by the present invention can be used in different application devices such as plasma etching devices and plasma deposition devices: electrical characteristics and durability. 。 。 , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , , Scale hair ^ Fan Fan (four) view _ of the application of Guangdong [schematic description of the simple] Figure 1 green display according to the invention _ ^ surface. The shaving diagram of the electrostatic chuck of the month-by-example. Figure 3 shows the connection diagram in Figure 1. Figure 4 is a cross-sectional view showing another aspect of the present invention. Fig. 5 is a view showing the insulation of the electrostatic chuck. Fig. 2 is a view showing the second embodiment of the scraper of the first embodiment of the connector of Fig. 1. Fig. 6 is a view showing the operation of the conventional static electricity. Chuck and the armor of the present invention 46 201120988

TW6493PA = graph leakage current and operation time - leakage and operation time plus "=== and the second fiscal electrostatic chuck. The 7β diagram shows the traditional rhyme diagram. Electrostatic Applicator of Electric Chuck Figure 8 depicts a photograph of the molecular structure used to form the (3)-powder. Fig. 9 of the #4 thermal spray layer shows a flow chart for forming the steps of the eighth embodiment. The method of the dry method of the first stage is shown in the first drawing to show a flow chart of the method for forming the first slurry in Fig. 9. Fig. 11 is a flow chart showing a method for forming the second slurry in Fig. 9. Fig. 12 is a schematic view showing a method for forming the slurry mixture in Fig. 9. Figure 13 is a flow chart showing the steps of a unit procedure of a method of manufacturing an electrostatic chuck in accordance with an embodiment of the present invention. [Main component symbol description] 100, 200: electrostatic chuck 110: base 115: adhesive layer 120, 220: first insulating layer 140. electrode layer

47 S 201120988

TW6493PA 150: first dielectric layer 160: second dielectric layer 170: connectors 171, 177: joints 172, 178: insulators 173, 179: buffer layer 179a: first buffer 179b: second buffer 230: Two insulation layers

Claims (1)

201120988 iw〇4yjm VII, the scope of application for patents: 1. An electrostatic chuck, comprising: a substrate; a first insulating layer disposed on the substrate and the first insulating layer has an amorphous structure; an electrode layer, set And forming an electrostatic force on the first insulating layer; and a dielectric layer on the electrode layer. 2. The electrostatic chuck of claim 1, wherein the dielectric layer comprises: a first dielectric layer covering the electrode layer and the first dielectric layer has an amorphous structure, and a second a dielectric layer is disposed on the first dielectric layer and the second dielectric layer has a crystalline structure. 3. The electrostatic chuck of claim 2, wherein the first dielectric layer has a thickness of between about 100 microns and about 300 microns, and the second dielectric layer has a thickness of between about 200 microns. To about 400 microns. 4. The electrostatic chuck of claim 2, wherein the first dielectric layer has a porosity of between about 0.5% and about 2%, and the second dielectric layer has a porosity of between about 3% to about 7%. 5. The electrostatic chuck of claim 2, wherein the first dielectric layer has a surface roughness of between about 4 microns and about 8 microns, and the second dielectric layer has a surface roughness It is from about 3 microns to about 5 microns. The electrostatic chuck 1 of claim 2, wherein the first dielectric layer and the second dielectric layer have a hardness of at least about 650 Hv, the first dielectric layer and the first The two dielectric layers have an adhesion strength of at least about 14 MPa. 7. The electrostatic chuck of claim 2, wherein the first dielectric layer and the second dielectric layer together have a volume resistance of about 1014 ohms (Ω·αη) To approximately 1015 micrometers ohm centimeters. 8. The electrostatic chuck of claim 2, wherein the electrode layer is covered by the first dielectric layer, the first dielectric layer being covered by the second dielectric layer. 9. The electrostatic chuck of claim 1, wherein the first insulating layer has a thickness of between about 400 microns and about 600 microns. 10. The electrostatic chuck of claim 1, further comprising a second insulating layer disposed between the substrate and the electrode layer. 11. The electrostatic chuck of claim 10, wherein the first insulating layer has a thickness of between about 100 microns and about 300 microns, and the second insulating layer has a thickness of between about 200 microns and about 400 microns. 12. An electrostatic chuck comprising: a substrate; an insulating layer on the substrate; an electrode layer disposed on the insulating layer and the electrode layer generating an electrostatic force; S 50 201120988 1 W04WA, a first a dielectric layer disposed on the electrode layer and having an amorphous structure; and a second dielectric layer disposed on the first dielectric layer and having a crystalline structure. 13. A method of manufacturing an electrostatic chuck, comprising: preparing a substrate; forming a first insulating layer on the substrate, the first insulating layer having an amorphous structure; forming an electrode layer on the first insulating layer, The electrode layer generates an electrostatic force; and a dielectric layer is formed on the electrode layer. 14. The method of claim 13, wherein the forming the dielectric layer comprises: forming a first dielectric layer on the electrode layer such that the first dielectric layer has an amorphous structure, and Forming a second dielectric layer on the first dielectric layer such that the second dielectric layer has a crystalline structure. 15. The method of claim 14, wherein the electrode layer is coated by the first dielectric layer, and the second dielectric layer is formed on the first dielectric layer, the first insulation And a layer on the substrate such that the first dielectric layer, the first insulating layer, and the substrate are covered by the second dielectric layer. 16. The method of claim 14, wherein the first insulating layer, the first dielectric layer, and the second dielectric layer are subjected to an atmospheric plasma spray coating process. Process), a rapid oxythermal combustion spray coating process (rapid 51 201120988 TW6493PA oxygen-fuel thermal spray coating process) 1, vacuum plasma spray coating process and a power spray coating One of the processes is formed. 17. The method of claim 14, further comprising filling a plurality of fillers in an interior space of the first insulating layer, the first dielectric layer, and at least one of the two dielectric layers. 18. The method of claim 14, wherein forming the electrode layer further comprises forming a second insulating layer on one of the first insulating layer and the substrate. The method of claim 18, further comprising performing a filling process for filling a plurality of fillers on the first insulating layer, the second insulating layer, the first dielectric layer, and the second An internal space of at least one of the dielectric layers; wherein the second insulating layer is subjected to an atmospheric plasma spray coating process, a rapid oxygen combustion thermal spray coating process (rapid oxygen- A fuel thermal spray coating process, a vacuum plasma spray coating process, and a power spray coating process are formed. 20. A method of manufacturing an electrostatic chuck, comprising: preparing a substrate; forming an insulating layer on the substrate; forming an electrode layer on the insulating layer, the electrode layer generating an electrostatic force; forming a first dielectric Laminating on the electrode layer such that the first dielectric layer 52 201120988 I W64y3FA has an amorphous structure; and forming a second dielectric layer on the first dielectric layer to make the second dielectric layer Has a crystalline structure.