CN103325725A - Static chuck - Google Patents
Static chuck Download PDFInfo
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- CN103325725A CN103325725A CN2013100633461A CN201310063346A CN103325725A CN 103325725 A CN103325725 A CN 103325725A CN 2013100633461 A CN2013100633461 A CN 2013100633461A CN 201310063346 A CN201310063346 A CN 201310063346A CN 103325725 A CN103325725 A CN 103325725A
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- Prior art keywords
- lug boss
- oxide
- glass substrate
- electrostatic chuck
- approximately
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68757—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a coating or a hardness or a material
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- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
Abstract
The present invention discloses a static chunk. The static chunk comprises a pedestal base material, a ceramic insulating layer formed on the pedestal base material, an electrode layer formed on the ceramic insulating layer to generate an electrostatic force; a dielectric layer formed on the electrode layer and possessing a surface bearing a lining; and a protruding part protruded from the surface of the dielectric layer. The dielectric layer is composed of an aluminum oxide, and the protruding part is composed of an amorphous phase oxide comprising aluminum and yttrium.
Description
Technical field
The present invention relates to electrostatic chuck, say in more detail by electrostatic force to come for the electrostatic chuck that loads substrate.
Background technology
Usually, in the manufacturing of the integrated circuit component that uses glass substrate etc., can carry out and utilize isoionic etching work procedure etc., utilize in the execution of isoionic etching work procedure etc. herein, can load glass substrate etc. by the electrostatic chuck that utilizes electrostatic force.Particularly, described electrostatic chuck possesses lug boss is arranged, from the mounting rat of mounting glass substrate etc.As mentioned above, possess lug boss and be in order to guide refrigerating gas to flow at the back side of glass substrate etc. more easily, thereby prevent that the temperature when carrying out etching work procedure etc. from rising.
In addition, in open 2002-66198 number of Japanese Patent Publication 2008-160093 number (below, be referred to as " citing document 1 "), the Korean Patent (below, be referred to as " citing document 2 ") etc., an example that possesses the electrostatic chuck that described lug boss is arranged is disclosed.
According to citing document 1, be to form described lug boss by carrying out the aerosol deposition (aerosol deposition) of using yittrium oxide., carry out aerosol when deposition herein, because be difficult to carry out the large tracts of land deposition, therefore exist the large tracts of land that is not easy to be formed for to load glass substrate etc. with the lug boss of electrostatic chuck.Therefore in addition, because lug boss is to be made of the yittrium oxide of hardness less than glass substrate hardness, in the time of can causing contact with the glass substrate back side, there is the shortcoming that the situation that lug boss self easily weares and teares occurs continually.
According to citing document 2, lug boss is to utilize aluminium oxide etc. to form.Particularly, such as citing document 2 described lug bosses, when utilizing aluminium oxide etc. to form, because the hardness of aluminium oxide is greater than the hardness of glass substrate, therefore when contact with the glass substrate back side, existing can be to the shortcoming of glass substrate back side generation cut.
Summary of the invention
(technical problem that will solve)
The object of the present invention is to provide electrostatic chuck, hardly to the generations such as glass substrate damages and possess the outstanding lug boss such as durability.
(means of dealing with problems)
In order to reach described purpose, the electrostatic chuck according to one embodiment of the invention comprises: base substrate; Ceramic insulating layer is formed on the described base substrate; Electrode layer is formed on the described ceramic insulating layer for electrostatic force occurs; Dielectric layer is formed on the described electrode layer, has the surface of mounting substrate; And lug boss, from the rat of described dielectric layer, described dielectric layer is to be made of aluminium oxide, described lug boss is that the oxide by the amorphous phase that comprises aluminium and yttrium consists of.
In the electrostatic chuck according to one embodiment of the invention that is mentioned to, described lug boss can have 500 to 700Hv hardness.
In the electrostatic chuck according to one embodiment of the invention that is mentioned to, described lug boss has hemispherical dome structure, and can be from rat 1 to the 200 μ m of described dielectric layer.
In the electrostatic chuck according to one embodiment of the invention that is mentioned to, described lug boss can have 0.1 to 2.0% the porosity.
In the electrostatic chuck according to one embodiment of the invention that is mentioned to, described lug boss is that the oxide of the amorphous phase that forms of the material powder by the yittrium oxide that comprises 30 to 50% aluminium oxide and 50 to 70% consists of.
In the electrostatic chuck according to one embodiment of the invention that is mentioned to, described lug boss can have the surface roughness of 4 to 7 μ m.
In the electrostatic chuck according to one embodiment of the invention that is mentioned to, described lug boss can form by the atmospheric plasma hot-spraying coating.
(effect of invention)
According to aforesaid the present invention, comprise mounting glass substrate etc. dielectric layer the mounting surface and consist of from the lug boss, particularly lug boss of the mounting rat oxide by the amorphous phase that comprises aluminium and yttrium.
As mentioned above, because being the oxide by the amorphous phase that comprises aluminium and yttrium, lug boss consists of, also can prevent from occuring on the glass substrate back side cut etc. even therefore contact with the glass substrate back side, in addition, also can prevent the easily situation of wearing and tearing even lug boss contacts with the glass substrate back side.
Meanwhile, consist of because lug boss is oxide by the amorphous phase that comprises the yttrium that anti-isoiony is outstanding, therefore can prolong the useful life of the electrostatic chuck that causes because of plasma in etching process.In addition, because being oxide by the amorphous phase that comprises the aluminium that has price competitiveness, lug boss consists of the manufacturing cost that therefore can cut down electrostatic chuck.
Particularly, lug boss formed have approximately 0.1 to 2% the porosity, thereby can guarantee for the lug boss durability of physical impact etc. more outstanding.
Description of drawings
Fig. 1 is the cutaway view that schematically shows according to the electrostatic chuck of one embodiment of the invention.
Fig. 2 is the photo of the suffered damage in the glass substrate back side when confirming that electrostatic chuck with Fig. 1 loads glass substrate.
Fig. 3 is the photo of the suffered damage in the glass substrate back side when confirming to load glass substrate with in the past electrostatic chuck.
Fig. 4 is in order to confirm the photo for the porosity of the lug boss of the electrostatic chuck of Fig. 1.
Fig. 5 is in order to confirm the photo for the porosity of the lug boss of in the past electrostatic chuck.
Fig. 6 is for the chart for the anti-isoiony of the lug boss of the electrostatic chuck of Fig. 1 is described.(description of reference numerals)
10: base substrate 12: insulating barrier
14: electrode layer 16: dielectric layer
18: lug boss 100: electrostatic chuck
Embodiment
Below, with reference to accompanying drawing to being described in detail according to the present invention.The present invention can implement numerous variations and can have variform, will be illustrated among the figure and by this paper for specific embodiment to be described in detail.But this is not specifically to disclose form for the present invention is defined in, and should be understood to, and thought of the present invention and technical scope comprise: all changes, equivalent and substitute in inventive concept and the technical scope.When each figure was described, similarly reference marks was used on the similar member.About accompanying drawing, for definition of the present invention, the size of works has carried out enlarging diagram than actual size.Although the term of first, second grade is that multiple member has been described, described member can't be defined in described term.The purpose of using described term only is in order to distinguish a member and another member.For example, in the situation that do not break away from technical scope of the present invention, the first member can the called after second component, and second component also can called after the first member simultaneously.The term that uses among the application only is to use for specific embodiment is described, and is not to be for limiting the present invention.Single expression when not carrying out clear and definite statement in article, is to have comprised a plurality of expression.Among the application, " comprising " or the term of " having " etc. is feature, numeral, step, action, member, parts or its combination of putting down in writing in the specification in order to point out to have, is not for the existence of getting rid of in advance one or more other features or numeral, step, action, member, parts or its combination or subsidiary possibility.In the situation that do not carry out other definition, comprise that all terms that use herein of technical or scientific term have, have the identical meaning of the common understanding of usually knowing the knowledgeable with the technical field of the invention.The term identical with the defined meaning of normally used dictionary should be interpreted as, the meaning that unanimously in the correlation technique article, has, and do not carry out in the clearly defined situation, and be not interpreted as in this application desirability or the excessive meaning of formality.
(embodiment)
Fig. 1 is the cutaway view that schematically shows according to the electrostatic chuck of one embodiment of the invention.
With reference to Fig. 1, electrostatic chuck 100 among the present invention mainly is the large tracts of land substrate of glass substrate etc. that is used in the manufacturing of liquid crystal display cells, organic illuminated display element etc. for mounting, in addition, can be used for carrying out with plasma the lower electrode of the etching work procedure of etching work procedure etc.In addition, the electrostatic chuck 100 among the present invention has in the situation of structure of the lug boss 18 of mounting rat, can not be defined in the range of application of mentioned mounting such as large tracts of land substrate etc.
Described electrostatic chuck 100 can possess base substrate 10, insulating barrier 12, electrode layer 14, dielectric layer 16 and from the lug boss 18 of the rat of dielectric layer 16.
In addition, be formed with dielectric layer 16 at electrode layer 14.Dielectric layer 16 has dielectric function, thereby cause electrode layer 14 forms electrostatic force.Particularly, the dielectric layer 16 that uses among the present invention can exemplify aluminium oxide etc.In addition, dielectric layer 16 can also form by carrying out the atmospheric plasma hot-spraying coating.In addition, the upper face of dielectric layer 16 can be the surface of mounting substrate.
In addition, lug boss 18 of the present invention need to minimize the glass substrate back side bad such as cut occurs when contacting with the glass substrate back side, needs simultaneously to minimize when contacting with the glass substrate back side wearing and tearing of lug boss 18 self.
Herein, lug boss 18 is when dielectric layer 16 utilizes aluminium oxide to form as described, although can minimize the wearing and tearing of lug boss when contacting with the glass substrate back side 18 self, but because cut greater than glass substrate, might occur at the glass substrate back side when therefore contacting with the glass substrate back side in the hardness of aluminium oxide.In addition, when lug boss 18 utilizes yittrium oxide to form, although can minimize when contacting with the glass substrate back side cut is occured at the glass substrate back side, but because the hardness of yittrium oxide is less than glass substrate, therefore when contacting with the glass substrate back side, the wearing and tearing of lug boss 18 self easily occur, and shorten the useful life of electrostatic chuck 100.
Therefore, the lug boss described in the present invention 18 can form as material powder with aluminium oxide and yittrium oxide.Herein, when forming lug boss 18, aluminium oxide accounts for less than 30%, and yittrium oxide accounts for 70% when above, and the easy wearing and tearing of lug boss 18 self of the feature that is made of yittrium oxide can occur lug boss 18, therefore preferably do not use; Aluminium oxide accounts for less than 50%, and yittrium oxide accounts for 50% when above, and what the feature that is made of aluminium oxide can occur lug boss 18 easily produces cut at the glass substrate back side, therefore preferably do not use.Therefore according to the above, the amorphous phase oxide that the lug boss 18 among the present invention can be formed by the material powder of the yittrium oxide that comprises 30 to 50% aluminium oxide and 50 to 70% consists of.That is, the lug boss among the present invention 18 is by consisting of as the amorphous phase oxide that material powder forms with described aluminium oxide and yittrium oxide.In other words, although the lug boss 18 among the present invention is to form as material powder with aluminium oxide and yittrium oxide, the final physical character of the described lug boss 18 that forms as material powder with aluminium oxide and yittrium oxide comprises: the amorphous phase oxide that comprises aluminium and yttrium.
As mentioned above, protrusions of the present invention section 18 is to form with aluminium oxide and yittrium oxide, particularly, the feature that has for the aluminium oxide that maximizes and yittrium oxide have feature, blend range is adjusted to as mentioned above, thereby when contacting with the glass substrate back side, can prevent not only on the glass substrate antarafacial that cut occurs and can prevent the easy wearing and tearing of lug boss 18 self.
In addition, lug boss 18 of the present invention, with have about 500Hv less than hardness when forming, because the hardness less than glass substrate, therefore easily wear and tear when contacting with the glass substrate back side, its result can cause reducing the useful life of electrostatic chuck 100, because preferably do not use; When having the above hardness of about 700Hv and forming, because greater than the hardness of glass substrate, therefore when contact with the glass substrate back side, cut can occur at the glass substrate back side, therefore preferably use.Particularly, lug boss 18 conducts of the present invention, as mentioned above, the coating that is consisted of by the amorphous phase oxide that comprises aluminium and yttrium, therefore in the hardness less than 700Hv that has less than the hardness of glass substrate, has the hardness above 500Hv, even contact thereby have with the glass substrate back side, the physical features that also can cut not occur and can not wear and tear easily at the glass substrate back side.
Thus, lug boss 18 of the present invention forms and has approximately 500 to 700Hv hardness.Particularly, the lug boss 18 among the present invention be by with about 30 to 50% aluminium oxide and approximately 50 to 70% yittrium oxide consist of as the amorphous phase oxide that material powder forms, have 500 to 700Hv hardness thereby can form.
In addition, in the present invention, the lug boss 18 that the amorphous phase oxide that is formed by the material powder that comprises aluminium oxide and yittrium oxide consists of, can have relatively outstanding anti-characteristics of plasma, its result is, when electrostatic chuck 100 in the present invention is applied to use isoionic Etaching device etc., can expect to prolong the advantage in the useful life of the electrostatic chuck 100 that plasma causes.
In addition, lug boss 18 of the present invention, have hemispherical dome structure and from the rat of dielectric layer 16 approximately 1 to 200 μ m form.Herein, lug boss 18 is to form hemispherical dome structure in order to reduce with the contact area at the glass substrate back side, because when lug boss 18 and the contact area at the glass substrate back side are wide, the probability that the probability of generation cut and lug boss 18 self wear and tear can be relatively high.In addition, lug boss 18 projections because refrigerating gas etc. are not easy to flow between the glass substrate back side and lug boss 18, are not therefore preferably used during approximately less than 1 μ m; Lug boss 18 when being used to form the coating of lug boss 18, easily occurs from the situation of dielectric layer 16 sur-face peelings, therefore preferably use when approximately 200 μ m are above in lug boss 18 projection.
In addition, it is to reach by the coating that is used to form lug boss 18 that lug boss 18 of the present invention forms the porosity that has approximately less than 0.1%, does not therefore preferably use.Simultaneously, the porosity of lug boss 18 forms approximately 2.0% when above, because low to the durability of physical impact, does not therefore preferably use.Therefore, among the present invention, lug boss 18 forms has approximately 0.1 to 2.0% the porosity.
Thus, lug boss 18 among the present invention by comprise approximately 30 to 50% aluminium oxide and approximately the amorphous phase oxide that forms of the material powder of 50 to 70% yittrium oxide consist of, when forming from dielectric layer 16 rats 1 to 200 μ m with hemispherical dome structure, form and have 500 to 700Hv hardness and have approximately 0.1 to 2.0% the porosity.
In addition, lug boss 18 of the present invention can form by carrying out the atmospheric plasma hot-spraying coating.Particularly, in the formation of lug boss 18 be the anchor clamps that utilize with the metal material of rounded form perforation.For this reason, the formation of lug boss 18 is after will being positioned at the surface of dielectric layer 16 with the anchor clamps of the metal material of rounded form perforation, by high-temperature fusion as the alumina powder of material powder and yttrium oxide powder the time, utilize spray gun (spray gun) to come to spray melt substance and reach to being positioned at the anchor clamps of dielectric layer 16 surfaces with the metal material of rounded form perforation.
In addition, as mentioned above, lug boss 18 of the present invention can be understood as, utilize material powder to make thermal spray powder after, it is carried out coating, thereby forms the coating of amorphous phase oxide.
Herein, the operation that forms the described coating that is made of the oxide of amorphous phase is to spray the spray powders that obtains from the mixed slurry composition by the melting that is made of atmospheric plasma thermal spraying operation and form the coating that is made of the amorphous phase oxide that comprises yttrium and aluminium.Described mixed slurry composition is to be made of the first paste compound and the second paste compound, and described the first paste compound comprises: yttrium oxide particle; The first dispersant disperses yttrium oxide particle equably; The first bond provides adhesion to yttrium oxide particle; The first solvent of surplus.Described the second paste compound comprises: aluminium oxide particles; The second dispersant, equably dispersed alumina particle; The second bond provides adhesion to aluminium oxide particles; The second solvent of surplus.
The method that below comprises the coating that the amorphous phase oxide of yttrium and aluminium consists of for formation.
At first, obtain spray powders.Herein, spray powders can obtain from the mixed slurry composition of the first paste compound and the second paste compound.
Herein, described the first paste compound comprises: the first solvent of yttrium oxide particle, the first dispersant, the first bond and surplus.Particularly, yttrium oxide particle has the approximately diameter of 0.01 μ m to 2 μ m.In addition, the first dispersant plays the homodisperse effect of the yttrium oxide particle that makes in the first paste compound, and the first dispersant can have alkalescence.Herein, itself can have alkalescence the first dispersant, also can make the first dispersant have alkalescence by the dispersant that mixes aqueous or solid shape and the solvent with alkalescence in addition.Described the first dispersant can exemplify, and carboxylic acid is that material, acid esters are that material, acid amides are material etc.Can use separately them or mix two with on use.In addition, the first dispersant pH can be about 10 to 12.Simultaneously, have in the first dispersant of alkalescence, yittrium oxide has (-) surface charge.In addition, in the first paste compound, the content of the first dispersant is about 0.3% to 0.5%.In addition, the first bond provides adhesion between the yttrium oxide particle in the first paste compound.Herein, the content of the first bond is about 2% to 3%.In addition, as the example of the first bond, can exemplify ethene is material, acrylic acid series material etc.Particularly, the first bond is ethene when being material, and the first solvent is preferably the organic substance such as ethanol etc., and when the first bond was the acrylic acid series material, the first solvent was preferably water system.Described ethene is that material can exemplify, ethylene vinyl acetate resin, Corvic, polyvinylpyrrolidone, polyvinyl alcohol resin, polyvinyl butyral, polyvinyl acetate, polyvingl ether etc., can use separately them or mix two with on use.Described acrylic acid series material can exemplify, methacrylic resin, plexiglass, polyacrylonitrile resin, normal-butyl acrylic resin, polystyrene plexiglass etc., can use separately them or mix two with on use.Simultaneously, the first paste compound comprises the first solvent of described surplus.Herein, the first solvent can be described organic substance or water system.In addition, the first paste compound can use ball mill (ball mill) to form.That is, obtain the first paste compound by mix described yttrium oxide particle, the first dispersant, the first bond and the first solvent with ball mill.
The second paste compound comprises: the second solvent of aluminium oxide particles, the second dispersant, the second bond and surplus.For example, aluminium oxide particles has the approximately diameter of 0.5 μ m to 2 μ m.In addition, the second dispersant plays the homodisperse effect of the aluminium oxide particles that makes in the second paste compound, and the second dispersant can have acidity.Herein, itself can have acidity the second dispersant, also can make the second dispersant have acidity by the dispersant that mixes aqueous or solid shape and the solvent with acidity in addition.Described the second dispersant can exemplify, and carboxylic acid is that material, acid esters are that material, acid amides are material etc.Can use separately them or mix two with on use.In addition, the second dispersant material pH can be about 2 to 4.Simultaneously, have in the second dispersant of alkalescence, aluminium oxide has (+) surface charge.In addition, in the second paste compound, the content of the second dispersant is about 0.3% to 2%.In addition, the second bond provides adhesion between the aluminium oxide particles in the second paste compound.Herein, the content of the second bond is about 2% to 3%.In addition, as the example of the second bond, can exemplify ethene is material, acrylic acid series material etc.Particularly, the second bond is ethene when being material, and the second solvent is preferably the organic substance such as ethanol etc., and when the second bond was the acrylic acid series material, the second solvent was preferably water system.Described ethene is that material can exemplify, ethylene vinyl acetate resin, Corvic, polyvinylpyrrolidone, polyvinyl alcohol resin, polyvinyl butyral, polyvinyl acetate, polyvingl ether etc., can use separately them or mix two with on use.Described acrylic acid series material can exemplify, methacrylic resin, plexiglass, polyacrylonitrile resin, normal-butyl acrylic resin, polystyrene plexiglass etc., can use separately them or mix two with on use.Simultaneously, the second paste compound comprises the second solvent of described surplus.Herein, the second solvent can be described organic substance or water system.In addition, the second paste compound forms with the same ball mill (ball mill) that can also use of the first paste compound.That is, obtain the second paste compound by mix described aluminium oxide particles, the second dispersant, the second bond and the second solvent with ball mill.
Afterwards, comprise the first paste compound of yttrium oxide particle and comprise that the second paste compound of aluminium oxide particles obtains the mixed slurry composition by mutual mixing is described.At first, the mixed slurry composition need to be carried out spray drying (spray drying) operation and form the composition particles that comprises yittrium oxide and aluminium oxide.Herein, the spray drying operation is to spray the mixed slurry composition to carry out high-temperature heating and carry out from spray dryer.Particularly, described spray drying operation is to carry out in being about 800 ℃ to 1500 ℃ temperature.As mentioned above, be to be formed by the composition particles that comprises yittrium oxide and aluminium oxide by carrying out described spray drying operation mixed slurry composition.Herein, described thermal spray powder is to be made of the composition particles that comprises yittrium oxide and aluminium oxide, is made of the amorphous phase oxide when coating of therefore utilizing thermal spray powder to form can have as described later 0.1 to 2.0% the porosity.
In addition, as mentioned above, spray powders sprays to form amorphous phase coating by the melting that is made of atmospheric plasma thermal spraying operation.That is, among the present invention, form the coating of the amorphous phase oxide formation that from the material powder that comprises yittrium oxide and aluminium oxide, forms.Particularly, among the present invention, aluminium oxide and yittrium oxide are formed as material powder, but as mentioned above, the final physical character of the lug boss 18 that forms as raw material with aluminium oxide and yittrium oxide can be made of the amorphous phase oxide that comprises aluminium oxide and yittrium oxide.
Herein, although be to have illustrated that described lug boss 18 is to form as material powder with aluminium oxide and yittrium oxide, described lug boss 18 can also form as material powder with aluminium, yttrium and oxide.That is, the lug boss 18 among the present invention, can with, the amorphous phase oxide that forms from the material powder that comprises aluminium, yttrium and oxide consists of.In other words, the lug boss 18 among the present invention can use the spray powders that obtains from the mixed slurry composition of respectively aluminum mixture, yttrium and oxide, form the coating that is made of the amorphous phase oxide.Described oxide can comprise that not only metal oxide can also comprise nonmetal oxide, in addition, among the present invention, also can comprise oxygen itself.
In addition, among the present invention, formation is made of aluminium oxide and has an approximately dielectric layer 16 of 3 to 5% porositys, by grinding the roughness with dielectric layer 16, namely, surface roughness be adjusted to approximately 2 μ m following after, carry out described operation at dielectric layer 16 and consist of and have the lug boss 18 as coating that the about amorphous phase oxide of 0.1 to 2.0% porosity consists of.Herein, the porosity of the dielectric layer 16 that is made of aluminium oxide is about 5% when above, because therefore durability can lowly preferably not used.In addition, the surface roughness of the described dielectric layer 16 that is made of aluminium oxide is about 2 μ m when above, might cause occuring in the operation electric arc because residual charge occurs, cause being not easy to consist of the damage that release (dechucking) causes glass substrate because of residual charge simultaneously.
As mentioned above, lug boss 18 of the present invention be by, from comprising that approximately 30 to 50% aluminium oxide and the amorphous phase oxide that approximately forms the material powder of 50 to 70% yittrium oxide consist of, and with hemispherical dome structure from about 1 to the 200 μ m of the rat of dielectric layer 16, form simultaneously and have approximately 500 to 700Hv hardness and about 0.1 to 2.0% the porosity.
Therefore, electrostatic chuck 100 of the present invention even lug boss 18 contacts with the glass substrate back side, can prevent that also the glass substrate back side from cut etc. occuring, even lug boss 18 contacts with the glass substrate back side simultaneously, also can prevent the easily situation of wearing and tearing.In addition, lug boss 18 of the present invention is because anti-isoiony is outstanding, therefore can prolong the useful life of the electrostatic chuck 100 that causes because of plasma in the etching work procedure, simultaneously, because lug boss 18 has the approximately porosity below 2%, it is hereby ensured the more outstanding durability to physical impact.
In addition, when the surface roughness of lug boss 18 (Ra) is about less than 4 μ m, the refrigerating gas moving section at the position, the glass substrate back side that contacts with 18 of lug bosses can reduce, and thus the temperature difference occurs and causes occuring on the glass substrate generating the situation that stains, and does not therefore preferably use; When approximately 7 μ m were above, the durability of lug boss 18 self reduced, and not only caused thus shorten the useful life of lug boss 18, and was to act as the cause that particle occurs, and did not therefore preferably use.Thus, described lug boss 18 is preferably to form and has the approximately surface roughness of 4 to 7 μ m.
In addition, although illustrate, electrostatic chuck 100 of the present invention can also possess binder course between base substrate 10 and insulating barrier 12.Herein, binder course has the function of bond substrates base material 10 and insulating barrier 12.Simultaneously, binder course can be made of metal alloy, can use the metal alloy as tack coat can exemplify nickel alumin(i)um alloy.In addition, electrostatic chuck 100 of the present invention can also possess the parts that can apply to electrode layer 14 electric power.Thus, apply electric power by described parts to electrode layer 14, thereby can electrostatic force occur at electrode layer 14.
(confirming that whether cut occurs)
Fig. 2 is the photo of the suffered damage in the glass substrate back side when confirming that electrostatic chuck with Fig. 1 loads glass substrate, and Fig. 3 is the photo of the suffered damage in the glass substrate back side when confirming to load glass substrate with in the past electrostatic chuck.
At first, by carrying out the atmospheric plasma hot-spraying coating, formed by the lug boss from comprising that approximately 50% aluminium oxide and the amorphous phase oxide that approximately forms the material powder of 50% yittrium oxide consist of.That is, sample 1 is the electrostatic chuck that possesses lug boss, and described lug boss is by from comprising that approximately 50% aluminium oxide and the amorphous phase oxide that approximately forms the material powder of 50% yittrium oxide consist of.In addition, by carrying out the air plasma spraying coating, formed the lug boss that is consisted of by about 100% aluminium oxide.That is, sample 2 is the electrostatic chucks that possess lug boss, and described lug boss is to be made of about 100% aluminium oxide.
Herein, respectively sample 1 and sample 2 are contacted with the glass substrate back side.Afterwards, confirmed to be contacted with respectively the glass substrate back side of sample 1 and sample 2.
Above-mentioned affirmation result demonstration, cut can be confirmed not occur in the glass substrate back side that is contacted with sample 1; Obvious cut can be confirmed to have occured in the glass substrate back side that is contacted with sample 2.
Therefore, use as of the present invention, when possessing the electrostatic chuck of the lug boss that is made of the amorphous phase oxide that forms from the material powder that comprises aluminium and yttrium, can confirm when contacting with the glass substrate back side, cut does not occur in the glass substrate back side.
(for the porosity of lug boss)
Fig. 4 is in order to confirm the photo for the porosity of the lug boss of the electrostatic chuck of Fig. 1, and Fig. 5 is in order to confirm the photo for the porosity of the lug boss of in the past electrostatic chuck.
At first, respectively the porosity of described sample 1 and sample 2 is confirmed.Confirm that the result shows, during sample 1, as shown in Figure 4, the porosity is about 0.8% as can be known; During sample 2, as shown in Figure 5, the porosity is about 4.0% as can be known.
Therefore, can confirm, the lug boss that consists of such as the amorphous phase oxide by forming from the material powder that comprises aluminium and yttrium of the present invention has the porosity below 2.0%, and in contrast, the lug boss that only has aluminium oxide to consist of has and surpasses 2.0% the porosity.
Therefore, among the present invention, form the lug boss that is consisted of by the amorphous phase oxide that from the material powder that comprises aluminium and yttrium, forms and also can have the porosity below 2.0%, have thus the outstanding durability to physical impact.
(according to the abrasion evaluation of the lug boss porosity)
[table 1]
At first, as shown in table 1, sample 3 is only to have possessed and be made of aluminium oxide by carrying out the atmospheric plasma hot-spraying coating, and has approximately 3.0 to 5.0% the porosity and the about lug boss of 700 to 750Hv hardness; Sample 4 is only to have possessed and be made of aluminium oxide by carrying out the atmospheric plasma hot-spraying coating, and has approximately 7.0 to 10.0% the porosity and the about lug boss of 700 to 750Hv hardness.
Simultaneously, sample 5 be by carry out the atmospheric plasma hot-spraying coating possessed by, from comprising that about 50% aluminium oxide and the amorphous phase oxide that approximately forms the material powder of 50% yittrium oxide consist of, and have approximately 1.0 to 2.0% the porosity and the about lug boss of 600 to 650Hv hardness; Sample 6 be by carry out the atmospheric plasma hot-spraying coating possessed by, from comprising that about 50% aluminium oxide and the amorphous phase oxide that approximately forms the material powder of 50% yittrium oxide consist of, and have approximately 3.0 to 5.0% the porosity and the about lug boss of 600 to 650Hv hardness.
Afterwards, make respectively 3 to 6 pairs of glass substrate contacts of described sample 10 times, 20 times and 30 times.Particularly, sample else contacted the glass substrate of soda ash material in 3 to 6 minutes above the lug boss, and under the state of the vertical stress that applies 29.4N, after the contact glass substrate makes it to apply the horizontal stress that is respectively 10 times, 20 times and 30 times, the microscopic examination by about 80 multiplying powers the degree of wear of glass substrate.
Its result shows, during sample 3, when contacting 10 times with glass substrate, can confirm the approximately wearing and tearing of 6 μ m, when contacting 20 times with glass substrate, can confirm the approximately wearing and tearing of 9 μ m, when contacting 30 times with glass substrate, can confirm the approximately wearing and tearing of 12 μ m.During sample 4, when contacting 10 times with glass substrate, can confirm the approximately wearing and tearing of 8 μ m, when contacting 20 times with glass substrate, can confirm the approximately wearing and tearing of 13 μ m, when contacting 30 times with glass substrate, can confirm the approximately wearing and tearing of 16 μ m.During sample 5, when contacting 10 times with glass substrate, can confirm the approximately wearing and tearing of 4 μ m, when contacting 20 times with glass substrate, can confirm the approximately wearing and tearing of 8 μ m, when contacting 30 times with glass substrate, can confirm the approximately wearing and tearing of 11 μ m.During sample 6, when contacting 10 times with glass substrate, can confirm the approximately wearing and tearing of 7 μ m, when contacting 20 times with glass substrate, can confirm the approximately wearing and tearing of 10 μ m, when contacting 30 times with glass substrate, can confirm the approximately wearing and tearing of 14 μ m.
Thus, the best according to abrasion that as mentioned above can confirmatory sample 5.
Therefore, lug boss among the present invention is as the coating that is made of the amorphous phase oxide that forms from the material powder that comprises aluminium oxide and yittrium oxide, has approximately 0.1 to 2.0% the porosity, more preferably has approximately 1.0 to 2.0 the porosity, in addition, have 500 to 700Hv hardness, more preferably have 600 to 650Hv hardness.
(anti-isoiony measurement)
Fig. 6 is for the chart for the anti-isoiony of the lug boss of the electrostatic chuck of Fig. 1 is described.
First-selection has been carried out the plasma etching operation with above-mentioned sample 1 and sample 2 as object respectively.Herein, the plasma etching operation is that CF4, Ar and O2 are amounted to respectively approximately 100sccm, 1000sccm and 10sccm, carries out approximately 2 hours applying under the state of about 1300W high frequency electric source.
Carry out the result of described plasma etching operation, as shown in Figure 6, can confirm during sample 1 the approximately thickness of 0.7 μ m etched, can confirm during sample 2 the approximately thickness of 1.1 μ m etched.
Therefore, can confirm as of the present invention, in the situation of the lug boss that is consisted of by the amorphous phase oxide that from the material powder that comprises aluminium and yttrium, forms, have more outstanding anti-isoiony than the lug boss that is only consisted of by aluminium oxide.
Utilizability on the industry
As mentioned above, when using the electrostatic chuck that possesses lug boss of the present invention, because can prevent the glass substrate back side cut etc. occuring, thereby can promote process efficiency, therefore can expect to promote the reliability that integrated circuit component is made.
In addition, when using the electrostatic chuck that possesses lug boss of the present invention, instant lug boss contact with the glass substrate back side also can prevent easy situation of wearing and tearing, in addition, because have IMAGE and anti-isoiony, therefore can prolong the useful life of electrostatic chuck.Therefore can reduce the maintenance cost that possesses the electrostatic chuck of lug boss of the present invention.
Above, be illustrated with reference to the preferred embodiments of the present invention, but those skilled in the art should be appreciated that in the thought of the present invention that does not break away from technical scope of the present invention and scope and can carry out multiple modifications and changes to the present invention.
Claims (7)
1. an electrostatic chuck is characterized in that, comprising:
Base substrate;
Ceramic insulating layer is formed on the described base substrate;
Electrode layer is formed on the described ceramic insulating layer for electrostatic force occurs;
Dielectric layer is formed on the described electrode layer, has the surface of mounting substrate; And
Lug boss, from the rat of described dielectric layer,
Described dielectric layer is to be made of aluminium oxide, and described lug boss is that the oxide by the amorphous phase that comprises aluminium and yttrium consists of.
2. electrostatic chuck according to claim 1 is characterized in that,
Described lug boss has 500 to 700Hv hardness.
3. electrostatic chuck according to claim 1 is characterized in that,
Described lug boss has hemispherical dome structure, and from rat 1 to the 200 μ m of described dielectric layer.
4. electrostatic chuck according to claim 1 is characterized in that,
Described lug boss has 0.1 to 2.0% the porosity.
5. electrostatic chuck according to claim 1 is characterized in that,
Described lug boss is that the oxide of the amorphous phase that forms of the material powder by the yittrium oxide that comprises 30 to 50% aluminium oxide and 50 to 70% consists of.
6. electrostatic chuck according to claim 1 is characterized in that,
Described lug boss has the surface roughness of 4 to 7 μ m.
7. electrostatic chuck according to claim 1 is characterized in that,
Described lug boss forms by the atmospheric plasma hot-spraying coating.
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020120028573A KR101974386B1 (en) | 2012-03-21 | 2012-03-21 | Electrode static chuck |
| KR10-2012-0028573 | 2012-03-21 |
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| Publication Number | Publication Date |
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| CN103325725A true CN103325725A (en) | 2013-09-25 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN2013100633461A Pending CN103325725A (en) | 2012-03-21 | 2013-02-28 | Static chuck |
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| KR (1) | KR101974386B1 (en) |
| CN (1) | CN103325725A (en) |
Cited By (3)
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| CN104752135B (en) * | 2013-12-30 | 2018-01-23 | 中微半导体设备(上海)有限公司 | The preparation method of plasma processing apparatus and electrostatic chuck and electrostatic chuck |
| CN110060912A (en) * | 2019-06-05 | 2019-07-26 | 芜湖通潮精密机械股份有限公司 | Prevent dry etching lower electrode surface glass substrate from carrying on the back the structure and its process scraped |
| CN113748500A (en) * | 2019-06-28 | 2021-12-03 | 日本碍子株式会社 | Electrostatic chuck |
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| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN107078086B (en) * | 2014-02-07 | 2021-01-26 | 恩特格里斯公司 | Electrostatic chuck and method of manufacturing the same |
| KR101694754B1 (en) * | 2016-09-08 | 2017-01-11 | (주)브이앤아이솔루션 | eletectrostatic chuck and manufacturing method for the same |
| KR102401806B1 (en) * | 2021-10-21 | 2022-05-26 | (주)코리아스타텍 | Hybrid electrostatic chuck |
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Also Published As
| Publication number | Publication date |
|---|---|
| KR20130106916A (en) | 2013-10-01 |
| KR101974386B1 (en) | 2019-05-03 |
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