JP6378389B2 - Manufacturing method of parts for plasma processing apparatus - Google Patents

Description

  Embodiments described herein relate generally to a method for manufacturing a component for a plasma processing apparatus.

  In manufacturing an electronic device such as a semiconductor device, plasma etching is applied to an object to be processed. The accuracy required for plasma etching is increasing year by year with the miniaturization of electronic devices. In order to achieve high accuracy of plasma etching, it is necessary to suppress the generation of particles.

  A processing container of a plasma processing apparatus used for such plasma etching is made of a metal such as aluminum. The inner wall surface of the processing container is exposed to plasma. Therefore, in the plasma processing apparatus, a plasma-resistant film is provided along the inner wall of the processing container. As such a film, a film made of yttrium oxide is generally used.

  When exposed to a fluorocarbon-based plasma, the yttrium oxide film reacts with active species such as fluorine in the plasma. As a result, the yttrium oxide film is consumed. Thus, attempts have been made to configure the coating from yttrium fluoride. A film made of yttrium fluoride is formed by thermal spraying as described in Patent Document 1.

JP 2013-140950 A

  As the accuracy required for plasma etching increases, suppression of particles having a size that has not been a problem in the past is also required. For that purpose, it is necessary to further suppress the generation of particles from the thermal spray coating made of yttrium fluoride.

  In one aspect, a component that is exposed to plasma in a plasma processing apparatus is provided. This part has a substrate and a coating. The base material is made of, for example, aluminum or an aluminum alloy. An alumite film may be formed on the surface of the substrate. The coating is formed by spraying yttrium fluoride on the surface of the base including the base or the layer provided on the base. The porosity in the film of this part is 4% or less, and the arithmetic average roughness (Ra) of the surface of the film is 4.5 μm or less. This arithmetic average roughness (Ra) is specified in JIS B0601 1994.

  The coating covering the substrate in the above component is a yttrium fluoride sprayed coating, which is a dense coating having a low porosity and a small specific surface area. Accordingly, there is little surface variation due to exposure to plasma, and process performance variation is reduced. Therefore, the generation of particles from the film can be suppressed.

  The component of one embodiment may further include a first intermediate layer made of an yttrium oxide film formed by an atmospheric pressure plasma spraying method between the substrate and the film. Although a high breakdown voltage may be required for the components in the plasma processing apparatus, the breakdown voltage of the yttrium fluoride sprayed coating is relatively low. According to this embodiment, since the first intermediate layer made of the yttrium oxide sprayed coating is provided as the underlayer of the coating, the multilayer film including the coating and the first intermediate layer and having a high dielectric breakdown voltage is the base material. Provided above.

  In one embodiment, the film may not be formed on the region including the edge of the first intermediate layer, and may be formed on the first intermediate layer inside the region. The adhesion of the yttrium fluoride film to the substrate is relatively low. According to this embodiment, since the coating is not in contact with the substrate at the edge, peeling of the coating at the edge can be suppressed.

  In one embodiment, the component may further comprise a second intermediate layer between the first intermediate layer and the coating. In one embodiment, the second intermediate layer may have a linear expansion coefficient that is between the linear expansion coefficient of the first intermediate layer and the linear expansion coefficient of the coating. According to this embodiment, it is possible to suppress the peeling of the film due to the difference in the linear expansion coefficient between the first intermediate layer and the film. In one example, the second intermediate layer may be composed of a yttria-stabilized zirconia spray coating or a forsterite spray coating formed by atmospheric pressure plasma spraying. In another embodiment, the second intermediate layer may be composed of an alumina sprayed coating or a gray alumina sprayed coating formed by an atmospheric pressure plasma spraying method. According to this embodiment, a multilayer film comprising a coating, a first intermediate layer, and a second intermediate layer and having a high breakdown voltage is provided on the substrate.

  In one embodiment, the component may further comprise another intermediate layer between the substrate and the first intermediate layer. Another intermediate | middle layer may be comprised from the alumina sprayed coating formed by the atmospheric pressure plasma spraying method, or a gray alumina sprayed coating, for example. According to this embodiment, a multilayer film comprising a coating, a first intermediate layer, and another intermediate layer and having a high breakdown voltage is provided on the substrate.

  In another aspect, a manufacturing method suitable for manufacturing the above-described component for a plasma processing apparatus is provided. This manufacturing method is a step of performing surface adjustment of the surface of a base on which a film is formed by thermal spraying, and the surface of the base includes the surface of the substrate or the surface of a layer formed on the surface of the substrate. This step includes a step of forming a film on the surface by thermal spraying of yttrium fluoride (hereinafter referred to as “film forming step”). In the coating forming process, the nozzle of the spray gun that discharges the flame in the high-speed flame spraying method or the nozzle of the spray gun in the direction along the central axis of the nozzle of the spray gun that discharges the plasma jet in the atmospheric pressure plasma spraying method. Slurry containing particles of yttrium fluoride having an average particle diameter of 1 μm or more and 8 μm or less is supplied to a position away from the downstream side or the tip position of the nozzle of the spray gun.

  In this manufacturing method, since the film is formed on the surface of the base whose surface has been adjusted, the surface roughness of the film is reduced. Since such a coating has a small specific surface area, there is little surface variation due to exposure to plasma, and process performance variation is reduced. Therefore, the generation of particles from the film can be suppressed. Moreover, since the average particle diameter of the particle | grains contained in a slurry is 1 micrometer or more and 8 micrometers or less, aggregation of particle | grains is suppressed and a uniform membrane | film | coat is formed. Moreover, since the average particle diameter of the particles contained in the slurry is 1 μm or more and 8 μm or less, a film having a high interparticle bonding force can be formed. Furthermore, since the slurry is supplied to the position described above, adhesion of the spray material to the nozzle inner wall of the spray gun can be suppressed. As a result, the occurrence of spitting is suppressed. Therefore, according to this manufacturing method, a film having a low porosity and a small specific surface area, that is, a dense film is formed. Moreover, since the formed film is dense, it has high cross-sectional hardness. Therefore, according to this manufacturing method, the film | membrane which can suppress generation | occurrence | production of a particle is provided.

  In the film forming process of one embodiment, a high-speed flame spraying method is used, and the position where the slurry is supplied is a position in the range of 0 mm to 100 mm from the tip of the nozzle of the spray gun in the direction along the central axis. .

  In one embodiment, the atmospheric pressure plasma spraying method is used, and the slurry is supplied at a position in the range of 0 mm to 30 mm from the tip of the nozzle of the spray gun in the direction along the central axis. is there.

  In one embodiment, the angle formed by the center axis of the slurry supply nozzle for supplying the slurry with respect to the center axis of the nozzle of the spray gun is 45 degrees or more and 135 degrees or less.

  In the film forming step of one embodiment, the temperature of the substrate is set to a temperature of 100 ° C. or higher and 300 ° C. or lower. Since yttrium fluoride has a large thermal expansion coefficient, when the sprayed particles of yttrium fluoride adhere to the surface of the base, the sprayed particles are rapidly cooled and solidified. Thereby, a crack may arise in the membrane | film | coat formed. According to this embodiment, since the temperature of the base material is set to a temperature of 100 ° C. or higher and 300 ° C. or lower, it is possible to suppress the occurrence of cracks in the film.

  In one embodiment, the manufacturing method may further include a step of forming a first intermediate layer made of yttrium oxide between the substrate and the coating. The first intermediate layer can be formed by thermal spraying.

  In one embodiment, the manufacturing method further includes a step of masking a region including the edge of the first intermediate layer, and the film forming step is performed in a state where the region including the edge is masked in the masking step. Good. According to this aspect, it is possible to form a film only on the region of the first intermediate layer that has receded from the edge of the first intermediate layer.

  In one embodiment, the manufacturing method may further include a step of forming a second intermediate layer between the first intermediate layer and the coating. The second intermediate layer may be a layer having a linear expansion coefficient between the linear expansion coefficient of the first intermediate layer and the linear expansion coefficient of the coating. For example, the second intermediate layer may be composed of a yttria-stabilized zirconia spray coating or a forsterite spray coating. Or the 2nd intermediate | middle layer may be comprised from the alumina sprayed coating or the gray alumina sprayed coating. The second intermediate layer composed of any of these materials can be formed by thermal spraying.

  In one embodiment, the manufacturing method may further include a step of forming another intermediate layer between the base material and the first intermediate layer. Another intermediate layer may be composed of an alumina sprayed coating or a gray alumina sprayed coating. Another intermediate layer composed of any of these materials can be formed by thermal spraying.

  In one embodiment, the manufacturing method may further include a step of forming an alumite film on the surface of the substrate.

  As described above, the generation of particles from the yttrium fluoride film can be suppressed.

It is a figure which shows an example of a plasma processing apparatus. It is sectional drawing which expands and shows some components for plasma processing apparatuses which concern on one Embodiment. It is sectional drawing which expands and shows some components for plasma processing apparatuses which concern on another embodiment. It is sectional drawing which expands and shows some components for plasma processing apparatuses which concern on another embodiment. It is a flowchart which shows the manufacturing method which concerns on one Embodiment. It is a figure which shows the product manufactured in each process of the manufacturing method shown in FIG. It is a figure which shows the product manufactured in each process of the manufacturing method shown in FIG. It is a figure explaining the high-speed flame spraying method of one Embodiment. It is a figure explaining the atmospheric pressure plasma spraying method of one Embodiment. It is a graph which shows the dielectric breakdown voltage of a film | membrane. It is a graph which shows the dielectric breakdown voltage of a multilayer film. It is a graph which shows the relationship between the processing time of a plasma processing, and the number of particles.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding parts are denoted by the same reference numerals.

  First, an example of a plasma processing apparatus to which a component having a coating having plasma resistance according to various embodiments is applied will be described. FIG. 1 is a diagram illustrating an example of a plasma processing apparatus. A plasma processing apparatus 10 shown in FIG. 1 is a capacitively coupled plasma etching apparatus and includes a processing container 12. The processing container 12 has a substantially cylindrical shape. The processing container 12 is made of, for example, aluminum, and an inner wall surface thereof is anodized. The processing container 12 is grounded for safety.

  A substantially cylindrical support portion 14 is provided on the bottom of the processing container 12. The support part 14 is comprised from the insulating material, for example. The support portion 14 extends in the vertical direction from the bottom of the processing container 12 in the processing container 12. In addition, a mounting table PD is provided in the processing container 12. The mounting table PD is supported by the support unit 14.

  The mounting table PD holds the wafer W on the upper surface thereof. The mounting table PD includes a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of a metal such as aluminum, for example, and have a substantially disk shape. The second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.

  An electrostatic chuck ESC is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which an electrode which is a conductive film is disposed between a pair of insulating layers or insulating sheets. A DC power source 22 is electrically connected to the electrode of the electrostatic chuck ESC via a switch 23. The electrostatic chuck ESC attracts the wafer W by an electrostatic force such as a Coulomb force generated by a DC voltage from the DC power supply 22. Thereby, the electrostatic chuck ESC can hold the wafer W.

  A focus ring FR is disposed on the peripheral edge of the second plate 18b so as to surround the edge of the wafer W and the electrostatic chuck ESC. The focus ring FR is provided in order to improve the etching uniformity. The focus ring FR is made of a material appropriately selected according to the material of the film to be etched, and can be made of, for example, quartz.

  A coolant channel 24 is provided inside the second plate 18b. The refrigerant flow path 24 constitutes a temperature adjustment mechanism. Refrigerant is supplied to the refrigerant flow path 24 from a chiller unit provided outside the processing container 12 via a pipe 26a. The refrigerant supplied to the refrigerant flow path 24 is returned to the chiller unit via the pipe 26b. Thus, the refrigerant is supplied to the refrigerant flow path 24 so that the refrigerant circulates. By controlling the temperature of the refrigerant, the temperature of the wafer W supported by the electrostatic chuck ESC is controlled.

  The plasma processing apparatus 10 is provided with a gas supply line 28. The gas supply line 28 supplies the heat transfer gas from the heat transfer gas supply mechanism, for example, He gas, between the upper surface of the electrostatic chuck ESC and the back surface of the wafer W.

  Further, the plasma processing apparatus 10 is provided with a heater HT which is a heating element. The heater HT is embedded in the second plate 18b, for example. A heater power source HP is connected to the heater HT. By supplying electric power from the heater power supply HP to the heater HT, the temperature of the mounting table PD is adjusted, and the temperature of the wafer W mounted on the mounting table PD is adjusted. The heater HT may be built in the electrostatic chuck ESC.

  In addition, the plasma processing apparatus 10 includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table PD so as to face the mounting table PD. The lower electrode LE and the upper electrode 30 are provided substantially parallel to each other. A processing space S for performing plasma processing on the wafer W is provided between the upper electrode 30 and the lower electrode LE.

  The upper electrode 30 is supported on the upper portion of the processing container 12 via an insulating shielding member 32. In one embodiment, the upper electrode 30 may be configured such that the distance in the vertical direction from the upper surface of the mounting table PD, that is, the wafer mounting surface, is variable. The upper electrode 30 can include an electrode plate 34 and an electrode support 36. The electrode plate 34 faces the processing space S, and the electrode plate 34 is provided with a plurality of gas discharge holes 34a. The electrode plate 34 is an example of a component having plasma resistance.

  The electrode support 36 detachably supports the electrode plate 34 and can be made of a conductive material such as aluminum. The electrode support 36 may have a water cooling structure. A gas diffusion chamber 36 a is provided inside the electrode support 36. A plurality of gas flow holes 36b communicating with the gas discharge holes 34a extend downward from the gas diffusion chamber 36a. The electrode support 36 is formed with a gas introduction port 36c that guides the processing gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas introduction port 36c.

  A gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow rate controller group 44. The gas source group 40 has a plurality of gas sources. The plurality of gas sources are different types of gas sources. The valve group 42 includes a plurality of valves, and the flow rate controller group 44 includes a plurality of flow rate controllers such as a mass flow controller. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via the corresponding valve of the valve group 42 and the corresponding flow rate controller of the flow rate controller group 44, respectively.

  In the plasma processing apparatus 10, a deposition shield 46 is detachably provided along the inner wall of the processing container 12. The deposition shield 46 is also provided on the outer periphery of the support portion 14. The deposition shield 46 prevents an etching byproduct (depot) from adhering to the processing container 12 and is an example of a component having plasma resistance.

An exhaust plate 48 is provided on the bottom side of the processing container 12 and between the support 14 and the side wall of the processing container 12. The exhaust plate 48 can be configured by, for example, coating an aluminum material with ceramics such as Y ₂ O ₃ . An exhaust port 12 e is provided below the exhaust plate 48 and in the processing container 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a vacuum pump such as a turbo molecular pump, and can depressurize the space in the processing container 12 to a desired degree of vacuum. Further, a loading / unloading port 12 g for the wafer W is provided on the side wall of the processing container 12, and the loading / unloading port 12 g can be opened and closed by a gate valve 54.

  The plasma processing apparatus 10 further includes a first high frequency power source 62 and a second high frequency power source 64. The first high-frequency power source 62 is a power source that generates a first high-frequency power for plasma generation, and generates a high-frequency power of 27 to 100 MHz, in one example, 40 MHz. The first high frequency power supply 62 is connected to the lower electrode LE via the matching unit 66. The matching unit 66 is a circuit for matching the output impedance of the first high-frequency power source 62 with the input impedance on the load side (lower electrode LE side). Note that the first high-frequency power source 62 may be connected to the upper electrode 30 via a matching unit 66.

  The second high-frequency power source 64 is a power source that generates a second high-frequency power for drawing ions into the wafer W, that is, a power source that generates high-frequency bias power, and has a frequency within a range of 400 kHz to 13.56 MHz, for example, 3.2 MHz. High frequency bias power is generated. The second high frequency power supply 64 is connected to the lower electrode LE via the matching unit 68. The matching unit 68 is a circuit for matching the output impedance of the second high-frequency power source 64 with the input impedance on the load side (lower electrode LE side).

  In the plasma processing apparatus 10, a gas is supplied into the processing container 12 from a gas source selected from a plurality of gas sources in the gas source group 40. Further, the space inside the processing container 12 is reduced to a predetermined pressure by the exhaust device 50. Further, plasma is generated in the processing container 12 by a high-frequency electric field generated by high-frequency power supplied from the first high-frequency power source 62. The inner wall surface that defines the space in the processing container 12 is exposed to the generated plasma. For this reason, the deposition shield 46 and the electrode plate 34 are coated with plasma resistance.

  Hereinafter, various embodiments of components having plasma resistance will be described. FIG. 2 is an enlarged cross-sectional view showing a part of a component for a plasma processing apparatus according to an embodiment. The component 100 shown in FIG. 2 can be used as the deposition shield 46 described above, for example.

The component 100 has a base material 102 and a film 104. The substrate 102 can be made of aluminum or an aluminum alloy. For example, the base material 102 is an A5052 plate. The base material 102 is made of alumina (Al ₂ O ₃ ), silicon carbide, silicon oxide, silicon, stainless steel, carbon, or a composite material thereof (for example, Si—SiC or alumina-silicon carbide). May be.

  In one embodiment, the substrate 102 may include an alumite film 106 formed on one main surface side thereof. The alumite film 106 is formed by anodizing the base material 102. In one embodiment, the alumite film 106 is formed only on the surface portion of a partial region including the edge of the base material 102.

  In one embodiment, one main surface of substrate 102 has surface roughness below a predetermined value. As will be described later, the surface roughness (arithmetic average roughness: Ra) of the film formed on one main surface of the substrate 102 is 4.5 μm. Since the surface roughness of the film can reflect the surface roughness of the base material 102, the surface roughness of the base material 102 can be adjusted to a predetermined value or less. For example, the arithmetic average roughness Ra of the substrate 102 can be adjusted to 4.5 μm or less. The arithmetic average roughness (Ra) is specified in JIS B0601 1994.

  A coating 104 is formed on the substrate 102. The film 104 is made of yttrium fluoride and is formed by thermal spraying. The film 104 has a porosity of 0.01% or more and 4% or less. In the film 104 having such a porosity, the bonding force between particles is large, and therefore generation of particles from the film 104 is suppressed. The porosity is defined as a value measured by a porosity measurement method described below.

[Porosity measurement method]
In the porosity measurement method, a field emission scanning electron microscope SU8200 manufactured by Hitachi High-Tech is used. As measurement conditions, the acceleration voltage is set to 1 kV, the emission electricity is set to 20 μA, and the work distance is set to 8 mm. And the porosity is measured in the following procedures (1) to (5).
(1) Cutting an initial sample having a film.
(2) The cut surface is smoothed and cleaned by ion milling (see the following description regarding ion milling).
(3) The magnification of the field emission scanning electron microscope is set to 1000 times, and the cut surface is focused.
(4) A field emission scanning electron microscope is set so that the brightness and contrast of the obtained image are the same each time, and a backscattered electron image (BEI image) of the cut surface is acquired.
(5) A BEI image is binarized with a threshold value 175 using image processing software (Mitani Corporation Win Roof V50) to obtain a binary image. The ratio of the area of the pore portion to the total area of the cut surface in the binary image is defined as the porosity.

[Ion milling]
(1) Sample cutting A 1 cm square sample is cut out from an initial sample by a precision cutting machine.
(2) A resin-embedded epoxy resin is prepared, the film surface is immersed in the epoxy resin, and vacuum defoaming is performed.
(3) The sample is polished with water-resistant polishing paper (# 1000) so that the distance between the polishing observation target portion and the upper surface of the sample is within a range of 100 to 500 μm.
The sample is polished with water-resistant polishing paper (# 1000) so that the distance between the observation target portion and the processed surface is about 50 μm.
The substrate portion is polished with water-resistant polishing paper (# 400) so as to be parallel to the upper surface of the sample.
(4) An ion beam irradiation sample is set in the apparatus, and the cross section is processed by irradiating the observation target part with a beam perpendicularly from the upper surface of the sample.
(Conditions: acceleration voltage 6 [kV [, discharge voltage 1.5 [kV], gas flow rate 0.07 to 0.1 [cm ³ / mi], time 4 hours)

  Moreover, the film | membrane 104 has the surface roughness of arithmetic mean roughness Ra of 4.5 micrometers or less. According to the film 104 having such a surface roughness, the generation of particles is suppressed.

  In one embodiment, the film 104 may have a thickness of 10 μm or more and 200 μm or less. According to the film 104 having a film thickness of 10 μm or more, even if the film 104 is consumed in a plasma environment, exposure of the base of the film 104 can be prevented. Further, according to the film 104 having a film thickness of 200 μm or less, the adhesion between the film 104 and the base is maintained.

  In one embodiment, only a single layer coating 104 may be formed directly on the substrate 102. In another embodiment, for example, as shown in FIG. 2, a multilayer film ML including a film 104 may be formed on the substrate 102.

  In the embodiment shown in FIG. 2, the multilayer film ML further includes an intermediate layer 108 in addition to the film 104. The intermediate layer 108 is made of yttrium oxide and is formed by thermal spraying such as atmospheric pressure plasma spraying. In one embodiment, the intermediate layer 108 is formed on a solid surface of the substrate 102 and over a partial region of the alumite film 106 continuous with the solid surface. That is, the intermediate layer 108 is not formed on the region including the edge of the base material 102.

  Here, the adhesion force of the yttrium fluoride film to the substrate 102 is 8.8 MPa, and the adhesion force of the yttrium oxide film to the substrate 102 is 12.8 MPa. Therefore, by interposing the intermediate layer 108 between the base material 102 and the film 104, the adhesion of the multilayer film ML to the base material 102 can be increased. Further, the intermediate layer 108 may have a porosity of 3% to 10%, for example. Further, the intermediate layer 108 may have a thickness of 10 μm or more and 200 μm or less. According to the intermediate layer 108 having such a film thickness, the above-described adhesion can be maintained.

  Moreover, the yttrium fluoride which comprises the membrane | film | coat 104 has a comparatively low dielectric breakdown voltage. On the other hand, yttrium oxide constituting the intermediate layer 108 has a relatively high breakdown voltage. By interposing the intermediate layer 108 between the coating 104 and the base material 102, it is possible to increase the dielectric breakdown voltage of the multilayer film ML including the intermediate layer 108 and the coating 104.

  In one embodiment, the film thickness of each of the film 104 and the intermediate layer 108 may be 100 μm or more. According to the multilayer film ML including the film 104 and the intermediate layer 108 having such a film thickness, a high dielectric breakdown voltage can be obtained even in a high temperature environment.

  In one embodiment, the film 104 is not formed on the region R1 including the edge of the intermediate layer 108, but is formed on the region R2 inside the region R1. In the region R1 including the edge, cracking of the coating is likely to occur during thermal spraying. Therefore, the coating 104 can be prevented from cracking by not forming the coating 104 in the region R1.

  FIG. 3 is an enlarged cross-sectional view showing a part of a component for a plasma processing apparatus according to another embodiment. The component 100A shown in FIG. 3 can be used as the electrode plate 34 described above, for example. For this reason, a hole HL corresponding to the gas discharge hole 34a is formed in the base material 102 of the component 100A shown in FIG. The hole HL has a tapered shape that expands near the opening end in the vicinity of the opening end.

  On the base material 102 of the component 100A, an alumite film 106 is formed on a surface portion that defines the hole HL and a partial region that is continuous therewith. In the component 100 </ b> A, the intermediate layer 108 is formed on the solid surface of the base material 102 and the alumite film 106. In the component 100A, the intermediate layer 108 extends to the inside of the hole HL. Further, the film 104 is not formed in the vicinity of the hole HL, that is, on the region R1 including the edge of the intermediate layer 108, but is formed on the flat region R2 of the intermediate layer 108. In the region R1 of the component 100A, since the coating is easily cracked during thermal spraying, the coating 104 can be prevented from cracking by not forming the coating in the region R1.

  Hereinafter, components according to still another embodiment will be described with reference to FIG. FIG. 4 is an enlarged cross-sectional view showing a part of a component for a plasma processing apparatus according to still another embodiment. In the component 100 </ b> B illustrated in FIG. 4A, the multilayer film ML further includes an intermediate layer 110. The intermediate layer 110 is provided between the coating 104 and the intermediate layer 108. The intermediate layer 110 can be formed by thermal spraying. The intermediate layer 110 may have a film thickness of, for example, 10 μm or more and 500 μm or less because of its adhesion.

In one example, the intermediate layer 110 is made of yttria stabilized zirconia (YSZ) or forsterite. The intermediate layer 110 can be formed by atmospheric pressure plasma spraying. Here, the linear expansion coefficient of the film 104 is about 14 × 10 ⁻⁶ K ⁻¹ . Further, the thermal expansion coefficient of the intermediate layer 108 is approximately 7.3 × 10 ⁻⁶ K ⁻¹ . YSZ has a linear expansion coefficient of 9 × 10 ⁻⁶ K ⁻¹ and forsterite has a linear expansion coefficient of 10 × 10 ⁻⁶ K ⁻¹ . That is, the intermediate layer 110 made of YSZ or forsterite has a linear expansion coefficient between the linear expansion coefficient of the coating 104 and the linear expansion coefficient of the intermediate layer 108. Accordingly, by interposing the intermediate layer 110 between the coating 104 and the intermediate layer 108, it is possible to suppress peeling of the coating 104 due to a difference in linear expansion coefficient between the coating 104 and the intermediate layer 108.

  In another example, the intermediate layer 110 may be composed of an alumina spray coating or a gray alumina (alumina—about 2.5% titania) spray coating. According to the intermediate layer 110, the multilayer film ML including the coating 104, the intermediate layer 108, and the intermediate layer 110 and having a high breakdown voltage is provided on the substrate 102.

  In the component 100 </ b> C illustrated in FIG. 4B, the multilayer film ML further includes an intermediate layer 112. The intermediate layer 112 is interposed between the base material 102 and the intermediate layer 108. The intermediate layer 112 may have a film thickness of, for example, 10 μm or more and 500 μm or less because of its adhesion. The intermediate layer 112 may be composed of an alumina sprayed coating or gray alumina (alumina—about 2.5% titania). The intermediate layer 112 can be formed by atmospheric pressure plasma spraying. According to the intermediate layer 112, the multilayer film ML including the coating 104, the intermediate layer 108, and the intermediate layer 112 and having a high breakdown voltage is provided on the substrate 102.

  Hereinafter, manufacturing methods suitable for manufacturing the components of the various embodiments described above will be described. FIG. 5 is a flowchart showing a manufacturing method according to an embodiment. 6 and 7 are diagrams showing products manufactured in each step of the manufacturing method shown in FIG.

  The manufacturing method PM shown in FIG. 5 starts from step S1. In step S1, an alumite treatment (anodization treatment) of the base material 102 is performed. In step S1, a mask MK1 is provided on the base material 102 as shown in FIG. The mask MK1 is provided on the base material 102 so as to expose only the region to which the alumite treatment is applied. Next, an alumite treatment is performed to form an alumite film 106 as shown in FIG.

Next, as shown in FIG. 5, step S2 is performed. In step S2, surface adjustment of the surface of the base material 102 is performed. For surface adjustment in step S2, surface adjustment using a diamond grindstone, SiC grindstone, diamond film, or buff surface adjustment can be employed. Alternatively, CO ₂ blasting, blasting using alumina or SiC can be employed for the surface adjustment in step S2. In this step S2, the surface of the base material 102 is adjusted so that the surface roughness (arithmetic average roughness Ra) is Ra 4.5 μm or less in the case of a single layer, and Ra 5.5 or less μm if there is an intermediate layer. .

  In the subsequent step S3, an intermediate layer is formed. When creating the component 100 and the component 100A, the intermediate layer 108 is formed. When producing the component 100B, the intermediate layer 108 and the intermediate layer 110 are formed. When producing the component 100C, the intermediate layer 112 and the intermediate layer 108 are formed. In the formation of each intermediate layer in step S3, thermal spraying is performed using a slurry containing particles of the material constituting each intermediate layer. Various thermal spraying methods such as an atmospheric pressure plasma spraying (APS) method or a high-speed flame spraying (HVOF) method can be used for the thermal spraying. Note that a slurry containing particles having a particle size of 10 μm to 35 μm can be used for forming the intermediate layer 108. A slurry containing particles having such a particle size can be prepared at low cost.

  7 (a) and 7 (b) show the product created in forming the intermediate layer 108 of the part 100. FIG. In one embodiment, as shown in FIG. 7A, a mask MK <b> 2 that exposes a region for forming an intermediate layer is formed on the substrate 102. An intermediate layer is then formed by thermal spraying. For example, as shown in FIG. 7B, the intermediate layer 108 is formed by thermal spraying.

In the subsequent step S4, the surface of the base, which is the uppermost intermediate layer, is adjusted. For surface adjustment in step S4, surface adjustment using a diamond grindstone, SiC grindstone, diamond film, or buff surface adjustment can be employed. Alternatively, blasting using CO ₂ blasting, alumina, or SiC can be employed for the surface adjustment in step S4. In step S4, the surface of the base is adjusted so that the surface roughness (arithmetic average roughness Ra) is 4.5 μm or less. In addition, when the film | membrane 104 is directly formed on the base material 102, process S3 and process S4 are unnecessary.

  In the subsequent step S5, the film 104 is formed. In step S5, as shown in FIG. 7C, a mask MK3 that exposes a base region (for example, region R2) on which the film 104 is to be formed is formed thereon. Next, as shown in FIG. 7D, a film 104 is formed by thermal spraying using a slurry containing yttrium fluoride particles.

  FIG. 8 is a diagram for explaining a high-speed flame spraying method according to an embodiment. FIG. 9 is a diagram illustrating an atmospheric pressure plasma spraying method according to an embodiment. For the spraying in step S5, a high-speed flame spraying (HVOF) method shown in FIG. 8 or an atmospheric pressure plasma spraying (APS) method shown in FIG. 9 can be used.

  As shown in FIG. 8, the thermal spraying device SA1 used in the HVOF method for forming the coating 104 includes a thermal spraying gun SG1 and a slurry supply nozzle SN. Thermal spray gun SG1 has combustion container part BC which defines combustion chamber BS, nozzle NG1 continuing to the combustion container part BC, and ignition device ID. In the spray gun SG1, a gas containing high-pressure oxygen and fuel is supplied to the combustion chamber BS, and the ignition device ID ignites the gas. The flame (combustion flame) generated in the combustion chamber BS is throttled by the nozzle NG1, and the flame is discharged from the nozzle NG1. By supplying the slurry from the nozzle SN to the frame thus released, the particles in the slurry are melted or semi-molten and sprayed onto the product WP on which the film 104 is to be formed. .

  In the formation of the coating 104 by the HVOF method, as shown in FIG. 8, the slurry is away from the tip of the nozzle NG1 in the direction along the central axis AX1 of the nozzle NG1 of the spray gun SG1, or the tip of the nozzle NG1. Supplied to the position. That is, the distance X from the tip of the nozzle NG1 to the slurry supply position is set to 0 mm or more.

  As shown in FIG. 9, the thermal spraying apparatus SA2 used in the APS method for forming the coating 104 includes a thermal spraying gun SG2 and a slurry supply nozzle SN. The thermal spray gun SG2 includes a container part PC that defines a plasma generation space PS, a nozzle NG2 that is continuous with the container part PC, and an electrode ET. Container part PC is comprised from the insulator, and nozzle NG2 is comprised from the conductor. The electrode ET is provided in the container part PC. In the spray gun SG2, the working gas is supplied into the container part PC, and a voltage is applied between the electrode ET and the nozzle NG2. Thereby, plasma of working gas is generated and the plasma is emitted from the nozzle NG2. By supplying the slurry from the nozzle SN to the plasma thus released, the particles in the slurry are melted or semi-molten and sprayed onto the product WP on which the film 104 is to be formed. .

  In the formation of the film 104 by the APS method, as shown in FIG. 9, the slurry is positioned away from the tip of the nozzle NG2 in the direction along the central axis AX1 of the nozzle NG2 of the spray gun SG2, or the tip of the nozzle NG2. Supplied to the position. That is, the distance X from the tip of the nozzle NG2 to the slurry supply position is set to 0 mm or more.

  Also, in step S5 using either the HVOF method or the APS method, the slurry may contain yttrium fluoride particles, a dispersion medium, and an organic dispersant. The dispersion medium is water or alcohol. This slurry contains yttrium fluoride particles at a mass ratio of 5 to 40%. The particle diameter of the yttrium fluoride particles is 1 μm or more and 8 μm or less. The average particle size of the particles is defined as a particle size measured by a laser diffraction / scattering method (microtrack method).

  When the coating 104 is formed by the thermal spraying described above, and then the mask MK2 and the mask MK3 are removed, the parts are completed, and the manufacturing method PM ends.

  In this manufacturing method PM, since the film 104 is formed on the surface of the base whose surface has been adjusted, the surface roughness of the film 104 is reduced. Since the coating 104 has a small specific surface area, generation of particles from the coating 104 can be suppressed. Moreover, since the average particle diameter of the particle | grains contained in a slurry is 1 micrometer or more and 8 micrometers or less, aggregation of particle | grains is suppressed and the uniform membrane | film | coat 104 is formed. Moreover, since the average particle diameter of the particles contained in the slurry is 1 μm or more and 8 μm or less, a film having a high interparticle bonding force can be formed. Furthermore, since the slurry is supplied to the above-described position, it is possible to suppress the adhesion of the thermal spray material to the nozzle inner wall or the like of the thermal spray gun. As a result, the occurrence of spitting is suppressed. Therefore, according to this manufacturing method PM, a film having a low porosity and a small specific surface area, that is, a dense film 104 is formed. According to such a coating 104, there is little surface variation due to exposure to plasma, and process performance variation is reduced. Therefore, according to this manufacturing method PM, a film capable of suppressing the generation of particles is provided.

  When the HVOF method is used in step S5 of the embodiment, the slurry is supplied at a position in the range of 0 mm to 100 mm in the direction along the central axis AX1 from the tip of the nozzle NG1 of the spray gun SG1. is there. That is, X shown in FIG. 8 is a distance within the range of 0 mm to 100 mm. Further, in the step S5 of the embodiment, when the APS method is used, the position where the slurry is supplied ranges from 0 mm to 30 mm in the direction along the central axis AX1 from the tip of the nozzle NG2 of the spray gun SG2. Is the position. That is, X shown in FIG. 9 is a distance within the range of 0 mm to 30 mm.

  Moreover, even if the thermal spraying method used in step S5 is either the HVOF method or the APS method, the angle θ shown in FIGS. 8 and 9 is an angle within a range of 0 degree or 45 degrees to 135 degrees. . The angle θ is an angle formed by the center axis AX2 of the nozzle SN on the tip side of the nozzle of the thermal spray gun with respect to the center axis AX1.

  Moreover, in process S5 of one Embodiment, the temperature of the product WP containing the base material 102 is set to the temperature of 100 degreeC or more and 300 degrees C or less during thermal spraying. Since yttrium fluoride has a large thermal expansion coefficient, when the sprayed particles of yttrium fluoride adhere to the surface of the base, the sprayed particles are rapidly cooled and solidified. Thereby, a crack may arise in the membrane | film | coat formed. According to this embodiment, since the temperature of the product WP including the base material 102 is set to a temperature of 100 ° C. or higher and 300 ° C. or lower, the occurrence of cracks in the coating 104 can be suppressed.

  When the HVOF method is used in step S5, the acid fuel ratio is set to an acid fuel ratio higher than the theoretical acid fuel ratio required for complete combustion of the fuel. Thereby, generation | occurrence | production of soot by incomplete combustion can be prevented, and mixing of soot in the membrane | film | coat 104 can be prevented.

  Although various embodiments have been described above, various modifications can be made without being limited to the above-described embodiments. For example, a plasma processing apparatus using the above-described plasma-resistant component is not limited to a capacitively coupled plasma processing apparatus. The plasma-resistant component described above can be applied to any type of plasma processing apparatus such as an inductively coupled plasma processing apparatus or a plasma processing apparatus that generates plasma by microwaves.

  Hereinafter, experiments conducted for evaluating the manufacturing method PM and the coating 104 will be described.

  <Evaluation on X and θ in Thermal Spraying of Step S5 of Manufacturing Method PM>

  Using the HVOF method and the APS method, a sprayed coating made of yttrium fluoride was prepared while variously changing X and θ shown in FIGS. For the preparation of the thermal spray coating, a slurry containing yttrium fluoride particles having an average particle diameter of 1.5 μm at a mass ratio of 35% was used. Further, in the thermal spraying, the temperature of the product to be sprayed, that is, the product including the base material was set to 250 ° C.

And the produced sprayed coating was evaluated based on the evaluation item demonstrated below. In the following evaluation items, “after plasma treatment” means that the sample after the thermal spray coating is formed in the plasma treatment apparatus 10, and a gas containing CF 4, Ar, and O ₂ is supplied into the treatment container 12, This means that the thermal spray coating of the sample is exposed to plasma generated by setting the high frequency power of the first high frequency power supply 62 to 1500 W for 10 hours.

<Evaluation items>
[Consumption]
The level difference after plasma treatment between the masked area and the unmasked area of the sample sprayed coating is measured by a step gauge, and it is consumed when a step greater than the film thickness of the sprayed coating is confirmed. Judged to be a thing.
[Break / crack]
When a streak-like or mesh-like crack apparent in the thermal spray coating was observed by visual inspection, it was evaluated as “cracked” or “cracked”. Also, when cracks penetrating in the thickness direction of the thermal spray coating or continuous cracks with a length of 30 μm or more are observed by SEM observation of the cross section of the thermal spray coating, it is judged as “cracked” or “cracked” did.
[Peeling]
It was judged that the thermal spray coating was peeled off when the thermal spray coating was clearly peeled off by visual appearance or when a gap was found between the thermal spray coating and the substrate. Moreover, when the continuous gap | interval whose length was 50 micrometers or more was seen in the interface of a thermal spray coating and a base | substrate in SEM observation of the cross section of a thermal spray coating, it determined with the thermal spray coating having peeled.
[Adhesion rate]
The ratio of the weight of the sprayed coating to the weight of the particles used was determined by calculation, and when the ratio was 1% or less, it was determined that the “adhesion rate was low”.
[Material adhering to nozzle of thermal spray gun]
When adhesion of molten particles to the thermal spray gun was observed by visual observation of the inner wall of the nozzle of the thermal spray gun and the vicinity of the outlet of the nozzle, it was determined that the particles were melted and adhered.
[Particle evaluation]
A carbon tape was placed on the sprayed coating after the plasma treatment, and a weight made of polytetrafluoroethylene weighing 26 g was placed on the carbon tape. Next, after removing the weight, the carbon tape was peeled off, and the carbon tape was observed with an SEM. Subsequently, the ratio of the area of the transferred material in the total area of the carbon tape in the SEM image was calculated, and this was used as the transfer rate. When the transfer rate is higher than the transfer rate of the sprayed coating prepared by the APS method using the slurry containing yttrium fluoride particles having an average particle diameter of 50 μm with the setting of X = 5 mm and θ = 90 degrees. The sprayed coating to be evaluated was determined to be “particle failure”.

  Table 1 shows the values of X and θ, and the evaluation results for the created sprayed coating. In the evaluation results, “good” means that the thermal spray coating had good characteristics for all the evaluation items described above.

  As shown in Table 1, in the HVOF method, when X was 130 mm, it was determined as “particle failure”. In the HVOF method, when X is a negative value, melt adhesion of particles was observed on the nozzle inner wall of the spray gun. In addition, it was confirmed that in the HVOF method, a good thermal spray coating can be obtained when X is 0 mm or more and 100 mm. Further, in the HVOF method, it was determined that “the adhesion rate was low” when θ was 30 degrees. Further, when θ is 150 degrees, melt adhesion of particles was observed near the nozzle outlet of the spray gun. Further, it was confirmed that a good thermal spray coating can be formed when θ is not less than 45 degrees and not more than 135 degrees.

  In the APS method, when X is 40 mm, it was determined as “particle failure”. In addition, when X is a negative value, melt adhesion of particles to the nozzle of the spray gun was observed. Moreover, it was confirmed that a favorable thermal spray coating can be formed when X is 0 mm or more and 30 mm or less. In the APS method, it was determined that the “adhesion rate was low” when θ was 30 degrees. Further, when θ is 150 degrees, melt adhesion of particles was observed near the nozzle outlet of the spray gun. Therefore, it was confirmed that a good thermal spray coating can be formed when θ is not less than 45 degrees and not more than 135 degrees.

  <Evaluation on temperature of base material in thermal spraying of step S5 of manufacturing method PM>

  Using the HVOF method and the APS method, a thermal spray coating made of yttrium fluoride was prepared while variously changing the temperature of the product including the base material. For the preparation of the thermal spray coating, a slurry containing yttrium fluoride particles having an average particle diameter of 1.5 μm at a mass ratio of 35% was used. In the HVOF method, X = 50 mm and θ = 90 degrees were set. In the APS method, X = 15 mm and θ = 90 degrees were set. And the created sprayed coating was evaluated from the viewpoint of the crack of the evaluation item mentioned above and the deformation | transformation of a base material. Table 2 shows the evaluation results.

  As shown in Table 2, when the temperature of the product including the base material is 48 ° C., cracks occur in the sprayed coating, and when the temperature is 350 ° C., a relatively large deformation occurs in the base material. It was. Moreover, when the said temperature was 100 degreeC or more and 300 degrees C or less, there was no generation | occurrence | production of a crack and the deformation | transformation of the base material was not produced. From this, it was confirmed that if the substrate temperature during thermal spraying is 100 ° C. or higher and 300 ° C. or lower, cracks do not occur in the sprayed coating, and deformation of the substrate does not occur.

  <Evaluation on Particle Size of Particles in Slurry in Thermal Spraying of Step S5 of Manufacturing Method PM>

  Using the HVOF method and the APS method, a thermal spray coating made of yttrium fluoride was prepared while variously changing the average particle diameter of the yttrium fluoride particles. A slurry containing yttrium fluoride particles at a mass ratio of 35% was used for forming the thermal spray coating. In the HVOF method, X = 50 mm and θ = 90 degrees were set. In the APS method, X = 15 mm and θ = 90 degrees were set. In addition, the temperature of the product including the substrate was set to 250 ° C. And the produced sprayed coating was evaluated according to the evaluation item mentioned above. Moreover, the porosity and film thickness of the sprayed coating produced were determined. Table 3 shows the evaluation results.

  As shown in Table 3, when the average particle diameter of the particles in the slurry was 15 μm, it was determined as “particle failure”, and when it was 0.82 μm, cracks were observed in the sprayed coating. Moreover, when the average particle size was 1 μm or more and 8 μm or less, a good thermal spray coating was obtained. From this, it was confirmed that if the average particle diameter of the particles in the slurry is 1 μm or more and 8 μm or less, a good thermal spray coating can be formed. Moreover, when the porosity of the produced sprayed coating was 4.4%, it was determined as “particle failure”, and when the porosity was 4% or less, no defect with respect to particles was confirmed. From this, it was confirmed that the generation of particles is suppressed when the porosity is 4% or less. Moreover, when the film thickness of the produced sprayed coating was 5 μm, it was determined that the consumption after the plasma treatment was large. Moreover, peeling was observed when the film thickness of the prepared sprayed coating was 250 μm. From this, if the film thickness of the thermal spray coating is 10 μm or more and 200 μm or less, the thermal spray coating can be maintained even if the plasma treatment is consumed, and the thermal spray coating can be prevented from being peeled off. Was confirmed.

  <Evaluation on surface roughness>

  A thermal spray coating made of yttrium fluoride having different surface roughness was prepared by adjusting the surface roughness of the base. In addition, the HVOF method was used for the thermal spraying. For the thermal spraying, a slurry containing yttrium fluoride particles having an average particle diameter of 1.5 μm at a mass ratio of 35% was used. In the HVOF method, X = 50 mm and θ = 90 degrees were set. When the particle evaluation of the evaluation items described above was performed, when Ra is 4.8 μm, it is determined as “particle failure”, and when Ra is 4.5 μm and 3.5 μm, the particle failure is Not observed. From this, it was confirmed that the generation of particles is suppressed if Ra is a sprayed coating having a surface roughness of 4.5 μm or less.

  <Evaluation for dielectric breakdown voltage>

  A single layer film made of yttrium fluoride was formed on the substrate while changing the film thickness of the film in various ways. A multilayer film including an intermediate layer made of yttrium oxide and having a thickness of 100 μm and a film made of yttrium fluoride and having a thickness of 100 μm was formed on the base material. And the dielectric breakdown voltage of the produced single layer film and the multilayer film was measured while changing the temperature. FIG. 10 shows the breakdown voltage of the single layer film. In FIG. 10, the vertical axis represents the dielectric breakdown voltage, the upper numerical value shown along the horizontal axis is the film thickness (μm) of the single layer film, and the lower numerical value represents the film temperature when measuring the dielectric breakdown voltage. (° C). “RT” indicates room temperature. FIG. 11 shows the breakdown voltage of the multilayer film. In FIG. 11, the vertical axis represents the breakdown voltage, and the numerical value shown along the horizontal axis represents the temperature (° C.) of the multilayer film when measuring the breakdown voltage.

  As shown in FIG. 10, it was confirmed that the single layer film made of yttrium fluoride has a higher breakdown voltage as the film thickness increases, but the breakdown voltage decreases in an environment of higher temperature. As shown in FIG. 11, by interposing an intermediate layer made of yttrium oxide having a thickness of 100 μm between the film and the base material, the dielectric breakdown voltage of the multilayer film can be reduced even under a high temperature environment. It was confirmed that it can be suppressed.

  <Evaluation of Number of Particles Generated by Plasma Treatment in Plasma Treatment Apparatus Comprising Electrode Plate 34 Having Film and Intermediate Layer>

Yttrium fluoride having an intermediate layer made of yttrium oxide with a film thickness of 150 μm on an aluminum substrate, having a film thickness of 50 μm, a surface roughness (arithmetic average roughness Ra) of 1.43 μm, and a porosity of 2.39% Plasma processing apparatus 10 (hereinafter referred to as “plasma processing apparatus 10 having coating 1”) provided with an electrode plate 34 (see component 100A in FIG. 3) having a coating film (hereinafter referred to as “coating 1”) on an intermediate layer. And a wafer was mounted on the mounting table PD of the plasma processing apparatus 10 to perform plasma processing. In the plasma processing, a mixed gas containing C ₄ F ₈ gas, C ₄ F ₆ gas, CF ₄ gas, Ar gas, O ₂ gas, and CH ₄ gas is supplied into the processing container 12 at a total flow rate of 425 sccm, and the first The total power of the high frequency power of the high frequency power source 62 and the high frequency power of the second high frequency power source 64 was set to 5000 W. The relationship between the plasma processing time and the number of particles generated on the wafer was determined. In the measurement of the number of particles, the number of particles having a size of 45 nm or more was measured using Surfscan SP2 manufactured by KLA-Tencor.

  In addition, it has an intermediate layer made of yttrium oxide having a film thickness of 150 μm, a film made of yttrium fluoride having a film thickness of 50 μm, a surface roughness (arithmetic mean roughness Ra) of 5.48 μm, and a porosity of 5.21% A plasma processing apparatus 10 (hereinafter referred to as “plasma processing apparatus 10 having a coating 2”) provided with an electrode plate 34 having “film 2” on an intermediate layer is prepared, and a mounting table PD of the plasma processing apparatus 10 is prepared. A wafer was placed thereon, and the same plasma treatment as that in the case of using the plasma treatment apparatus having the coating 1 was performed. Then, as in the case of using the plasma processing apparatus having the coating 1, the relationship between the processing time of the plasma processing and the number of particles generated on the wafer was obtained.

  The graph of FIG. 12 shows the relationship between the plasma processing time and the number of particles. In FIG. 12, the horizontal axis indicates the plasma processing time (h), and the vertical axis indicates the number of particles. In addition, the solid line in the graph indicates a regression line of the number of particles generated at each of a plurality of processing times when the plasma processing apparatus 10 having the film 1 is used, and the broken line in the graph indicates the film 2. A regression line of the number of particles generated at each of a plurality of processing times when the plasma processing apparatus 10 having the above is used is shown. As shown in FIG. 12, the number of particles generated by the plasma processing in the plasma processing apparatus 10 having the coating 1 is considerably smaller than the number of particles generated by the plasma processing in the plasma processing apparatus 10 having the coating 2. It was. That is, according to the plasma processing apparatus including the electrode plate 34 having a film having a porosity of 4% or less and a surface roughness (arithmetic average roughness Ra) of 4.5 μm or less, generation of particles due to the plasma processing is generated. Was confirmed to be suppressed.

  DESCRIPTION OF SYMBOLS 10 ... Plasma processing apparatus, 30 ... Upper electrode, 34 ... Electrode plate, 50 ... Exhaust device, 62 ... 1st high frequency power supply, 100, 100A, 100B, 100C ... Parts, 102 ... Base material, 104 ... Film | membrane, 106 ... Anodizing film, 108 ... intermediate layer, 110 ... intermediate layer, 112 ... intermediate layer, ML ... multilayer film, SA1, SA2 ... spraying device, SG1, SG2 ... spraying gun, NG1, NG2 ... nozzle, SN ... nozzle (nozzle for slurry) ).

Claims (12)

A method for manufacturing a component for a plasma processing apparatus,
A step of adjusting a surface of a base on which a film is formed by thermal spraying, the surface of the base including a surface of a base material or a surface of a layer formed on the surface of the base;
Forming a film on the surface by thermal spraying of yttrium fluoride;
Including
In the step of forming the coating, high-speed flame spraying or atmospheric pressure plasma spraying is used,
In the step of forming the coating, in the direction along the central axis of the nozzle of the spray gun that discharges the flame in the high-speed flame spraying method or the nozzle of the spray gun that discharges the plasma jet in the atmospheric pressure plasma spraying method, the spray gun A slurry containing yttrium fluoride particles having an average particle diameter of 1 μm or more and 8 μm or less at a position remote from the nozzle of the nozzle or the tip position of the nozzle of the spray gun ,
The manufacturing method is as follows:
Forming a first intermediate layer made of yttrium oxide between the substrate and the coating;
Masking a region including an edge of the first intermediate layer;
Further including
The manufacturing method, wherein the step of forming the film is performed in a state where the region including the edge is masked in the step of masking . In the step of forming the film, a high-speed flame spraying method is used,
The position where the slurry is supplied is a position in the range of 0 mm to 100 mm from the tip of the nozzle in the direction along the central axis.
The manufacturing method according to claim 1. In the step of forming the coating, atmospheric pressure plasma spraying is used,
The position where the slurry is supplied is a position in the range of 0 mm to 30 mm from the tip of the nozzle in the direction along the central axis.
The manufacturing method according to claim 1.   The angle formed by the central axis of the nozzle for supplying the slurry with respect to the central axis of the nozzle of the spray gun is 45 degrees or more and 135 degrees or less. The manufacturing method as described in any one of 1-3.   In the process of forming the said film | membrane, the temperature of the said base material is set to the temperature of 100 to 300 degreeC, The manufacturing method as described in any one of Claims 1-4. The manufacturing method as described in any one of Claims 1-5 which further includes the process of forming a 2nd intermediate | middle layer between a said 1st intermediate | middle layer and the said membrane | film | coat. The manufacturing method according to claim 6 , wherein the second intermediate layer has a linear expansion coefficient between the linear expansion coefficient of the first intermediate layer and the linear expansion coefficient of the coating. The said 2nd intermediate | middle layer is a manufacturing method of Claim 7 comprised from the yttria stabilized zirconia sprayed coating or the forsterite sprayed coating. The said 2nd intermediate | middle layer is a manufacturing method of Claim 6 comprised from the alumina sprayed coating or the gray alumina sprayed coating. Between the said base first intermediate layer, further comprising forming a further intermediate layer, the manufacturing method according to claim 1. The manufacturing method according to claim 10 , wherein the another intermediate layer is formed of an alumina sprayed coating or a gray alumina sprayed coating. Further comprising, a manufacturing method according to any one of claim 1 to 11 to form alumite film on the surface of the substrate.

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