JP6639584B2 - Method for manufacturing parts for plasma processing apparatus - Google Patents

Description

  Embodiments of the present invention relate to a method for manufacturing a component for a plasma processing apparatus.

  In manufacturing an electronic device such as a semiconductor device, plasma etching is applied to an object to be processed. Accuracy required for plasma etching is increasing year by year with miniaturization of electronic devices. In order to realize high-precision plasma etching, it is necessary to suppress generation of particles.

  The processing vessel of the plasma processing apparatus used for such plasma etching is made of a metal such as aluminum. The inner wall surface of the processing container is exposed to the plasma. Therefore, in the plasma processing apparatus, a plasma-resistant coating is provided along the inner wall of the processing container. Generally, a film made of yttrium oxide is used as such a film.

  When the yttrium oxide film is exposed to a fluorocarbon gas plasma, it reacts with an active species such as fluorine in the plasma. As a result, the film made of yttrium oxide is consumed. Therefore, attempts have been made to form the coating from yttrium fluoride. The coating made of yttrium fluoride is formed by thermal spraying as described in Patent Document 1.

JP 2013-140950 A

  As the accuracy required for plasma etching increases, it is also required to suppress particles of a size that has not conventionally been a problem. For that purpose, it is necessary to further suppress the generation of particles from the thermal spray coating made of yttrium fluoride.

  In one aspect, a component is provided that is exposed to plasma in a plasma processing apparatus. This part has a base material and a film. The substrate is made of, for example, aluminum or an aluminum alloy. An alumite film may be formed on the surface of the substrate. The coating is formed by spraying yttrium fluoride on the surface of a substrate or a substrate including a layer provided on the substrate. The porosity in the coating of this part is 4% or less, and the arithmetic average roughness (Ra) of the surface of the coating is 4.5 μm or less. The arithmetic average roughness (Ra) is specified in JIS B0601 1994.

  The coating that coats the substrate in the above component is a sprayed yttrium fluoride coating, which is a dense coating having a small porosity and a small specific surface area. Therefore, surface fluctuations due to exposure to plasma are small, and fluctuations in process performance are small. Therefore, generation of particles from the film can be suppressed.

  The component of one embodiment may further include a first intermediate layer of an yttrium oxide coating formed by an atmospheric pressure plasma spray method between the substrate and the coating. Although a high breakdown voltage may be required for components in the plasma processing apparatus, the breakdown voltage of the sprayed yttrium fluoride coating is relatively low. According to this embodiment, since the first intermediate layer made of the sprayed yttrium oxide film is provided as the underlayer of the film, the multilayer film including the film and the first intermediate layer and having a high dielectric breakdown voltage is used as the base material. Provided above.

  In one embodiment, the coating is not formed on the region including the edge of the first intermediate layer, and may be formed on the first intermediate layer inside the region. The adhesion of the yttrium fluoride coating to the substrate is relatively low. According to this embodiment, since the film is not in contact with the substrate at the edge, peeling of the film at the edge can be suppressed.

  In one embodiment, the component may further comprise a second intermediate layer between the first intermediate layer and the coating. In one embodiment, the second intermediate layer may have a coefficient of linear expansion between the coefficient of linear expansion of the first intermediate layer and the coefficient of linear expansion of the coating. According to this embodiment, it is possible to suppress the peeling of the film due to the difference in linear expansion coefficient between the first intermediate layer and the film. In one example, the second intermediate layer may comprise a yttria-stabilized zirconia spray coating or a forsterite spray coating formed by atmospheric pressure plasma spraying. In another embodiment, the second intermediate layer may be composed of an alumina spray coating or a gray alumina spray coating formed by an atmospheric pressure plasma spray method. According to this embodiment, a multilayer film including a coating, a first intermediate layer, and a second intermediate layer and having a high breakdown voltage is provided on a substrate.

  In one embodiment, the component may further comprise another intermediate layer between the substrate and the first intermediate layer. Another intermediate layer may be composed of, for example, an alumina sprayed coating or a gray alumina sprayed coating formed by an atmospheric pressure plasma spraying method. According to this embodiment, a multilayer film including a coating, a first intermediate layer, and another intermediate layer and having a high breakdown voltage is provided on the substrate.

  In another aspect, there is provided a manufacturing method suitable for manufacturing the above-described component for a plasma processing apparatus. This manufacturing method is a step of adjusting the surface of the surface of the base to form a film by thermal spraying, the surface of the base, the surface of the substrate, or the surface of the layer formed on the surface of the substrate, And a step of forming a film on the surface by spraying yttrium fluoride (hereinafter, referred to as a “film forming step”). In the film forming step, the nozzle of the spray gun that discharges the flame in the high-speed flame spraying method, or from the nozzle of the spray gun in the direction along the central axis of the nozzle of the spray gun that discharges the plasma jet in the atmospheric pressure plasma spraying method A slurry containing particles of yttrium fluoride having an average particle diameter of 1 μm or more and 8 μm or less is supplied at a position distant from the downstream side or at the tip of the nozzle of the spray gun.

  In this manufacturing method, since a film is formed on the surface of the base whose surface has been adjusted, the surface roughness of the film is reduced. Since such a coating has a small specific surface area, surface fluctuations due to exposure to plasma are small, and fluctuations in process performance are small. Therefore, generation of particles from the film can be suppressed. Further, since the average particle size of the particles contained in the slurry is 1 μm or more and 8 μm or less, aggregation of the particles is suppressed, and a uniform film is formed. Further, since the average particle diameter of the particles contained in the slurry is 1 μm or more and 8 μm or less, a film having a high interparticle bonding force can be formed. Further, since the slurry is supplied to the above-described position, the adhesion of the spray material to the inner wall of the nozzle of the spray gun can be suppressed. As a result, occurrence of spitting is suppressed. Therefore, according to this manufacturing method, a film having a low porosity and a small specific surface area, that is, a dense film is formed. Further, the formed film is dense, and thus has a high sectional hardness. Therefore, according to this manufacturing method, a film capable of suppressing generation of particles is provided.

  In the film forming step of one embodiment, a high-speed flame spraying method is used, and the position where the slurry is supplied is a position within a range of 0 mm or more and 100 mm or less from the tip of the nozzle of the spray gun in a direction along the central axis. .

  In the film forming step of one embodiment, an atmospheric pressure plasma spraying method is used, and the slurry is supplied at a position within a range from 0 mm to 30 mm from the tip of the nozzle of the spray gun in a direction along the central axis. is there.

  In one embodiment, the angle formed by the center axis of the slurry supply nozzle for supplying the slurry on the tip side of the nozzle of the spray gun with respect to the center axis of the nozzle of the spray gun is 45 degrees or more and 135 degrees or less.

  In the film forming step of one embodiment, the temperature of the substrate is set to a temperature of 100 ° C. or more and 300 ° C. or less. Since yttrium fluoride has a large coefficient of thermal expansion, when the sprayed particles of yttrium fluoride adhere to the surface of the substrate, the sprayed particles are rapidly cooled and solidified. This may cause cracks in the formed film. According to this embodiment, since the temperature of the substrate is set to a temperature of 100 ° C. or more and 300 ° C. or less, it is possible to suppress the occurrence of cracks in the film.

  In one embodiment, the manufacturing method may further include a step of forming a first intermediate layer made of yttrium oxide between the substrate and the coating. The first intermediate layer can be formed by thermal spraying.

  In one embodiment, the manufacturing method further includes a step of masking a region including an edge of the first intermediate layer. In the masking step, the film forming step may be performed while the region including the edge is masked. Good. According to this aspect, it is possible to form a film only on the region of the first intermediate layer that recedes from the edge of the first intermediate layer.

  In one embodiment, the manufacturing method may further include a step of forming a second intermediate layer between the first intermediate layer and the coating. The second intermediate layer may be a layer having a linear expansion coefficient between the linear expansion coefficient of the first intermediate layer and the linear expansion coefficient of the coating. For example, the second intermediate layer may be composed of a sprayed yttria-stabilized zirconia coating or a sprayed forsterite coating. Alternatively, the second intermediate layer may be composed of a sprayed alumina film or a sprayed gray alumina film. The second intermediate layer composed of any of these materials can be formed by thermal spraying.

  In one embodiment, the manufacturing method may further include a step of forming another intermediate layer between the substrate and the first intermediate layer. Another intermediate layer may be composed of an alumina sprayed coating or a gray alumina sprayed coating. Another intermediate layer composed of any of these materials can be formed by thermal spraying.

  In one embodiment, the manufacturing method may further include a step of forming an alumite film on the surface of the substrate.

  As described above, it is possible to suppress the generation of particles from the yttrium fluoride coating.

It is a figure showing an example of a plasma processing device. It is sectional drawing which expands and shows some components for plasma processing apparatuses which concern on one Embodiment. It is sectional drawing which expands and shows some components for plasma processing apparatuses concerning another embodiment. It is sectional drawing which expands and shows some components for plasma processing apparatuses which concern on another embodiment. 4 is a flowchart illustrating a manufacturing method according to one embodiment. FIG. 6 is a diagram illustrating a product manufactured in each step of the manufacturing method illustrated in FIG. 5. FIG. 6 is a diagram illustrating a product manufactured in each step of the manufacturing method illustrated in FIG. 5. It is a figure explaining the high-speed flame spraying method of one Embodiment. It is a figure explaining the atmospheric pressure plasma spraying method of one Embodiment. 4 is a graph showing a dielectric breakdown voltage of a film. 4 is a graph showing a breakdown voltage of a multilayer film. 5 is a graph showing a relationship between a plasma processing time and the number of particles.

  Hereinafter, various embodiments will be described in detail with reference to the drawings. In the drawings, the same or corresponding portions are denoted by the same reference numerals.

  First, an example of a plasma processing apparatus to which components having a plasma-resistant coating according to various embodiments are applied will be described. FIG. 1 is a diagram illustrating an example of a plasma processing apparatus. The plasma processing apparatus 10 shown in FIG. 1 is a capacitively-coupled plasma etching apparatus and includes a processing container 12. The processing container 12 has a substantially cylindrical shape. The processing container 12 is made of, for example, aluminum, and an inner wall surface of the processing container 12 is anodized. The processing container 12 is grounded for security.

  On the bottom of the processing container 12, a substantially cylindrical support portion 14 is provided. The support 14 is made of, for example, an insulating material. The support portion 14 extends vertically from the bottom of the processing container 12 in the processing container 12. A mounting table PD is provided in the processing container 12. The mounting table PD is supported by the support unit 14.

  The mounting table PD holds the wafer W on its upper surface. The mounting table PD has a lower electrode LE and an electrostatic chuck ESC. The lower electrode LE includes a first plate 18a and a second plate 18b. The first plate 18a and the second plate 18b are made of a metal such as aluminum, for example, and have a substantially disk shape. The second plate 18b is provided on the first plate 18a and is electrically connected to the first plate 18a.

  An electrostatic chuck ESC is provided on the second plate 18b. The electrostatic chuck ESC has a structure in which electrodes, which are conductive films, are arranged between a pair of insulating layers or insulating sheets. A DC power supply 22 is electrically connected to the electrodes of the electrostatic chuck ESC via a switch 23. The electrostatic chuck ESC sucks the wafer W by electrostatic force such as Coulomb force generated by a DC voltage from the DC power supply 22. Thereby, the electrostatic chuck ESC can hold the wafer W.

  A focus ring FR is disposed on the peripheral portion of the second plate 18b so as to surround the edge of the wafer W and the electrostatic chuck ESC. The focus ring FR is provided to improve the uniformity of etching. The focus ring FR is made of a material appropriately selected according to a material of a film to be etched, and may be made of, for example, quartz.

  A coolant channel 24 is provided inside the second plate 18b. The coolant channel 24 constitutes a temperature control mechanism. A coolant is supplied to the coolant channel 24 from a chiller unit provided outside the processing container 12 via a pipe 26a. The refrigerant supplied to the refrigerant passage 24 is returned to the chiller unit via the pipe 26b. In this way, the coolant is supplied to the coolant channel 24 so as to circulate. By controlling the temperature of the coolant, the temperature of the wafer W supported by the electrostatic chuck ESC is controlled.

  Further, the plasma processing apparatus 10 is provided with a gas supply line 28. The gas supply line 28 supplies a heat transfer gas, for example, He gas, from the heat transfer gas supply mechanism between the upper surface of the electrostatic chuck ESC and the back surface of the wafer W.

  Further, the plasma processing apparatus 10 is provided with a heater HT as a heating element. The heater HT is, for example, embedded in the second plate 18b. A heater power supply HP is connected to the heater HT. When power is supplied from the heater power supply HP to the heater HT, the temperature of the mounting table PD is adjusted, and the temperature of the wafer W mounted on the mounting table PD is adjusted. Note that the heater HT may be built in the electrostatic chuck ESC.

  Further, the plasma processing apparatus 10 includes an upper electrode 30. The upper electrode 30 is disposed above the mounting table PD so as to face the mounting table PD. The lower electrode LE and the upper electrode 30 are provided substantially in parallel with each other. A processing space S for performing plasma processing on the wafer W is provided between the upper electrode 30 and the lower electrode LE.

  The upper electrode 30 is supported on the upper part of the processing container 12 via an insulating shielding member 32. In one embodiment, the upper electrode 30 may be configured such that the distance in the vertical direction from the upper surface of the mounting table PD, that is, the wafer mounting surface, is variable. The upper electrode 30 may include an electrode plate 34 and an electrode support 36. The electrode plate 34 faces the processing space S, and the electrode plate 34 is provided with a plurality of gas discharge holes 34a. The electrode plate 34 is an example of a component having plasma resistance.

  The electrode support 36 detachably supports the electrode plate 34, and may be made of a conductive material such as aluminum. This electrode support 36 may have a water-cooled structure. Inside the electrode support 36, a gas diffusion chamber 36a is provided. A plurality of gas flow holes 36b communicating with the gas discharge holes 34a extend downward from the gas diffusion chamber 36a. Further, the electrode support 36 is formed with a gas inlet 36c for guiding the processing gas to the gas diffusion chamber 36a, and a gas supply pipe 38 is connected to the gas inlet 36c.

  A gas source group 40 is connected to the gas supply pipe 38 via a valve group 42 and a flow controller group 44. The gas source group 40 has a plurality of gas sources. The plurality of gas sources are sources of different types of gas. The valve group 42 includes a plurality of valves, and the flow controller group 44 includes a plurality of flow controllers such as a mass flow controller. The plurality of gas sources of the gas source group 40 are connected to the gas supply pipe 38 via corresponding valves of the valve group 42 and corresponding flow controllers of the flow controller group 44, respectively.

  In the plasma processing apparatus 10, a deposition shield 46 is provided detachably along the inner wall of the processing container 12. The deposit shield 46 is also provided on the outer periphery of the support portion 14. The deposition shield 46 prevents an etching by-product (depot) from adhering to the processing container 12 and is an example of a component having plasma resistance.

An exhaust plate 48 is provided on the bottom side of the processing container 12 and between the support portion 14 and the side wall of the processing container 12. The exhaust plate 48 can be configured by, for example, coating an aluminum material with ceramic such as Y ₂ O ₃ . An exhaust port 12 e is provided below the exhaust plate 48 and in the processing container 12. An exhaust device 50 is connected to the exhaust port 12e via an exhaust pipe 52. The exhaust device 50 has a vacuum pump such as a turbo molecular pump, and can reduce the pressure in the space inside the processing container 12 to a desired degree of vacuum. Further, a loading / unloading port 12g for the wafer W is provided on a side wall of the processing container 12, and the loading / unloading port 12g can be opened and closed by a gate valve 54.

  Further, the plasma processing apparatus 10 further includes a first high frequency power supply 62 and a second high frequency power supply 64. The first high-frequency power supply 62 is a power supply that generates a first high-frequency power for plasma generation, and generates a high-frequency power of a frequency of 27 to 100 MHz, for example, 40 MHz. The first high frequency power supply 62 is connected to the lower electrode LE via a matching unit 66. The matching unit 66 is a circuit for matching the output impedance of the first high-frequency power supply 62 with the input impedance on the load side (lower electrode LE side). Note that the first high-frequency power supply 62 may be connected to the upper electrode 30 via a matching device 66.

  The second high-frequency power supply 64 is a power supply for generating a second high-frequency power for attracting ions to the wafer W, that is, a high-frequency bias power, and has a frequency in a range of 400 kHz to 13.56 MHz, for example, 3.2 MHz. Of high frequency bias power. The second high frequency power supply 64 is connected to the lower electrode LE via the matching device 68. The matching unit 68 is a circuit for matching the output impedance of the second high-frequency power supply 64 with the input impedance on the load side (lower electrode LE side).

  In the plasma processing apparatus 10, a gas is supplied into the processing chamber 12 from a gas source selected from a plurality of gas sources in a gas source group 40. Further, the space inside the processing container 12 is reduced to a predetermined pressure by the exhaust device 50. Further, a plasma is generated in the processing chamber 12 by a high-frequency electric field generated by high-frequency power supplied from the first high-frequency power supply 62. An inner wall surface defining a space in the processing container 12 is exposed to the generated plasma. Therefore, the deposition shield 46 and the electrode plate 34 are coated with plasma resistance.

  Hereinafter, various embodiments of components having plasma resistance will be described. FIG. 2 is an enlarged sectional view showing a part of a part for a plasma processing apparatus according to one embodiment. The component 100 shown in FIG. 2 can be used, for example, as the above-described deposit shield 46.

The component 100 has a base material 102 and a film 104. The base material 102 can be made of aluminum or an aluminum alloy. For example, the base material 102 is a plate-like body of A5052. Note that the base material 102 is made of alumina (Al ₂ O ₃ ), silicon carbide, silicon oxide, silicon, stainless steel, carbon, or a composite material thereof (for example, Si—SiC or alumina-silicon carbide). You may.

  In one embodiment, the substrate 102 may include an alumite film 106 formed on one main surface side. The alumite film 106 is formed by anodizing the base material 102. In one embodiment, the alumite film 106 is formed only on the surface portion of a partial region including the edge of the base material 102.

  In one embodiment, one main surface of the substrate 102 has a surface roughness equal to or less than a predetermined value. As described later, the surface roughness (arithmetic average roughness: Ra) of the film formed on one main surface of the substrate 102 is 4.5 μm. Since the surface roughness of the coating can reflect the surface roughness of the substrate 102, the surface roughness of the substrate 102 can be adjusted to a predetermined value or less. For example, the arithmetic average roughness Ra of the substrate 102 can be adjusted to 4.5 μm or less. The arithmetic average roughness (Ra) is defined by JIS B0601 1994.

  On the base material 102, a film 104 is formed. The coating 104 is made of yttrium fluoride and formed by thermal spraying. The coating 104 has a porosity of 0.01% or more and 4% or less. In the film 104 having such a porosity, the bonding force between particles is large, and therefore, generation of particles from the film 104 is suppressed. The porosity is defined as a value measured by a porosity measurement method described below.

[Porosity measurement method]
In the porosity measurement method, a field emission scanning electron microscope SU8200 manufactured by Hitachi High-Technologies Corporation is used. As measurement conditions, the acceleration voltage is set to 1 kV, the emission power is set to 20 μA, and the work distance is set to 8 mm. The porosity is measured according to the following procedures (1) to (5).
(1) Cut the initial sample with the coating.
(2) The cut surface is smoothed and cleaned by ion milling (see the following description on ion milling).
(3) The magnification of the field emission scanning electron microscope is set to 1000 times, and the cut surface is focused.
(4) The field emission scanning electron microscope is set so that the brightness and contrast of the obtained image are the same each time, and a backscattered electron image (BEI image) of the cut surface is obtained.
(5) The BEI image is binarized with a threshold 175 using image processing software (Win Roof V50, Mitani Corporation) to obtain a binary image. The porosity is defined as the ratio of the area of the pore portion to the total area of the cut surface in the binary image.

[Ion milling]
(1) Sample cutting A sample of 1 cm square is cut out from an initial sample by a precision cutting machine.
(2) A resin-embedded epoxy resin is prepared, the film surface is immersed in the epoxy resin, and degassed in vacuum.
(3) The sample is polished with water-resistant abrasive paper (# 1000) so that the distance between the polishing observation target portion and the upper surface of the sample is within a range of 100 to 500 μm.
The sample is polished with water-resistant abrasive paper (# 1000) so that the distance between the observation target portion and the processed surface is about 50 μm.
The substrate is polished with water-resistant abrasive paper (# 400) so as to be parallel to the upper surface of the sample.
(4) An ion beam irradiation sample is set in the apparatus, and a beam is irradiated to the observation target portion vertically from the upper surface of the sample to process a cross section.
(Conditions: acceleration voltage 6 [kV], discharge voltage 1.5 [kV], gas flow rate 0.07 to 0.1 [cm < ³ > / mi], time 4 hours)

  In addition, the coating 104 has a surface roughness of an arithmetic average roughness Ra of 4.5 μm or less. According to the film 104 having such a surface roughness, generation of particles is suppressed.

  In one embodiment, the coating 104 may have a thickness between 10 μm and 200 μm. According to the coating 104 having a thickness of 10 μm or more, even if the coating 104 is consumed in a plasma environment, exposure of the base of the coating 104 can be prevented. Further, according to the coating 104 having a thickness of 200 μm or less, the adhesion between the coating 104 and the base is maintained.

  In one embodiment, only a single layer of coating 104 may be formed directly on substrate 102. In another embodiment, for example, as shown in FIG. 2, a multilayer film ML including a film 104 may be formed on the base material 102.

  In the embodiment illustrated in FIG. 2, the multilayer film ML further includes an intermediate layer 108 in addition to the film 104. The intermediate layer 108 is made of yttrium oxide and is formed by thermal spraying such as atmospheric plasma spraying. In one embodiment, the intermediate layer 108 is formed over the solid surface of the substrate 102 and over a portion of the alumite film 106 that is continuous with the solid surface. That is, the intermediate layer 108 is not formed on a region including the edge of the base material 102.

  Here, the adhesion of the yttrium fluoride film to the substrate 102 is 8.8 MPa, and the adhesion of the yttrium oxide film to the substrate 102 is 12.8 MPa. Therefore, by interposing the intermediate layer 108 between the base material 102 and the film 104, the adhesion of the multilayer film ML to the base material 102 can be increased. Further, the intermediate layer 108 may have a porosity of, for example, 3% to 10%. Further, the intermediate layer 108 may have a thickness of 10 μm or more and 200 μm or less. According to the intermediate layer 108 having such a film thickness, it is possible to maintain the above-mentioned adhesion.

  Further, yttrium fluoride forming the film 104 has a relatively low dielectric breakdown voltage. On the other hand, yttrium oxide constituting the intermediate layer 108 has a relatively high dielectric breakdown voltage. By interposing the intermediate layer 108 between the film 104 and the base material 102, it is possible to increase the dielectric breakdown voltage of the multilayer film ML including the intermediate layer 108 and the film 104.

  In one embodiment, the thickness of each of the coating 104 and the intermediate layer 108 may be 100 μm or more. According to the multilayer film ML including the film 104 and the intermediate layer 108 having such a thickness, a high dielectric breakdown voltage can be obtained even in a high-temperature environment.

  In one embodiment, the coating 104 is not formed on the region R1 including the edge of the intermediate layer 108, but is formed on the region R2 inside the region R1. In the region R1 including the edge, the coating is easily cracked at the time of thermal spraying. Therefore, by not forming the coating 104 in the region R1, the cracking of the coating 104 can be prevented.

  FIG. 3 is an enlarged sectional view showing a part of a part for a plasma processing apparatus according to another embodiment. The component 100A shown in FIG. 3 can be used as, for example, the electrode plate 34 described above. For this reason, holes HL corresponding to the gas discharge holes 34a are formed in the base material 102 of the component 100A shown in FIG. The hole HL has a tapered shape in the vicinity of the opening end and expanding as approaching the opening end.

  On the base material 102 of the component 100A, an alumite film 106 is formed on a surface portion defining the hole HL and a partial region continuous with the surface portion. In the component 100A, the intermediate layer 108 is formed on the solid surface of the base material 102 and on the alumite film 106. In the component 100A, the intermediate layer 108 extends to the inside of the hole HL. The film 104 is not formed near the hole HL, that is, on the region R1 including the edge of the intermediate layer 108, but is formed on the flat region R2 of the intermediate layer 108. In the region R1 of the component 100A, the coating is easily cracked during thermal spraying. Therefore, by not forming the coating in the region R1, the cracking of the coating 104 can be prevented.

  Hereinafter, components according to still another embodiment will be described with reference to FIG. FIG. 4 is an enlarged sectional view showing a part of a part for a plasma processing apparatus according to still another embodiment. In the component 100B shown in FIG. 4A, the multilayer film ML further has an intermediate layer 110. The intermediate layer 110 is provided between the film 104 and the intermediate layer 108. The intermediate layer 110 can be formed by thermal spraying. The intermediate layer 110 may have a thickness of, for example, 10 μm or more and 500 μm or less due to its adhesion.

In one example, the intermediate layer 110 is made of yttria-stabilized zirconia (YSZ) or forsterite. The intermediate layer 110 can be formed by an atmospheric pressure plasma spray method. Here, the coefficient of linear expansion of the film 104 is about 14 × 10 ⁻⁶ K ⁻¹ . The coefficient of thermal expansion of the intermediate layer 108 is about 7.3 × 10 ⁻⁶ K ⁻¹ . The linear expansion coefficient of YSZ is 9 × 10 ⁻⁶ K ⁻¹ , and the linear expansion coefficient of forsterite is 10 × 10 ⁻⁶ K ⁻¹ . That is, the intermediate layer 110 made of YSZ or forsterite has a linear expansion coefficient between the linear expansion coefficient of the coating 104 and the linear expansion coefficient of the intermediate layer 108. Therefore, by interposing the intermediate layer 110 between the film 104 and the intermediate layer 108, it is possible to suppress the peeling of the film 104 due to the difference in the linear expansion coefficient between the film 104 and the intermediate layer 108.

  In another example, the intermediate layer 110 may comprise a sprayed alumina coating or a sprayed gray alumina (alumina-about 2.5% titania) coating. According to the intermediate layer 110, the multilayer film ML including the coating 104, the intermediate layer 108, and the intermediate layer 110 and having a high dielectric breakdown voltage is provided on the base material 102.

  In the component 100C shown in FIG. 4B, the multilayer film ML further has an intermediate layer 112. The intermediate layer 112 is interposed between the base material 102 and the intermediate layer 108. The intermediate layer 112 may have a thickness of, for example, 10 μm or more and 500 μm or less due to its adhesion. Intermediate layer 112 may be comprised of an alumina sprayed coating or gray alumina (alumina-about 2.5% titania). This intermediate layer 112 can be formed by the atmospheric pressure plasma spraying method. According to the intermediate layer 112, the multilayer film ML including the coating 104, the intermediate layer 108, and the intermediate layer 112 and having a high breakdown voltage is provided on the substrate 102.

  Hereinafter, manufacturing methods suitable for manufacturing the components of the above-described various embodiments will be described. FIG. 5 is a flowchart illustrating a manufacturing method according to an embodiment. 6 and 7 are views showing products manufactured in each step of the manufacturing method shown in FIG.

  The manufacturing method PM shown in FIG. 5 starts from step S1. In step S1, the alumite treatment (anodizing treatment) of the base material 102 is performed. In step S1, a mask MK1 is provided on the base material 102 as shown in FIG. The mask MK1 is provided on the base material 102 so as to expose only a region to which the alumite treatment is applied. Next, by performing an alumite treatment, an alumite film 106 is formed as shown in FIG.

Next, as shown in FIG. 5, a step S2 is performed. In step S2, the surface of the substrate 102 is adjusted. Surface adjustment using a diamond grindstone, a SiC grinding stone, a diamond film, or the like, or a buff surface adjustment can be employed for the surface adjustment in step S2. Alternatively, CO ₂ blasting, blasting using alumina or SiC can be employed for the surface adjustment in step S2. In this step S2, the surface of the base material 102 is surface-adjusted so that the surface roughness (arithmetic average roughness Ra) is Ra 4.5 μm or less when the surface is a single layer, and Ra 5.5 or less when there is an intermediate layer. .

  In the following step S3, an intermediate layer is formed. When producing the component 100 and the component 100A, the intermediate layer 108 is formed. When producing the component 100B, the intermediate layer 108 and the intermediate layer 110 are formed. When producing the component 100C, the intermediate layer 112 and the intermediate layer 108 are formed. In the formation of each intermediate layer in step S3, thermal spraying using a slurry containing particles of a material constituting each intermediate layer is performed. For the thermal spraying, various thermal spraying methods such as an atmospheric pressure plasma spraying (APS) method or a high-speed flame spraying (HVOF) method can be used. Note that a slurry containing particles having a particle size of 10 μm or more and 35 μm or less can be used for forming the intermediate layer 108. A slurry containing particles of such a particle size can be prepared at low cost.

  FIGS. 7A and 7B show the products produced in forming the intermediate layer 108 of the component 100. In one embodiment, as shown in FIG. 7A, a mask MK2 exposing a region where an intermediate layer is to be formed is formed on the base material. Next, an intermediate layer is formed by thermal spraying. For example, as shown in FIG. 7B, the intermediate layer 108 is formed by thermal spraying.

In the following step S4, the surface of the underlayer, which is the uppermost intermediate layer, is adjusted. For the surface adjustment in step S4, a surface adjustment using a diamond grindstone, a SiC grindstone, a diamond film, or the like, or a buff surface adjustment can be employed. Alternatively, CO ₂ blasting, blasting using alumina or SiC can be employed for the surface adjustment in step S4. In this step S4, the surface of the base is adjusted so that the surface roughness (arithmetic average roughness Ra) becomes 4.5 μm or less. When the film 104 is formed directly on the base material 102, the steps S3 and S4 are unnecessary.

  In the following step S5, a film 104 is formed. In step S5, as shown in FIG. 7C, a mask MK3 that exposes an underlying region (for example, region R2) on which the film 104 is formed is formed thereon. Next, as shown in FIG. 7D, a film 104 is formed by thermal spraying using a slurry containing particles of yttrium fluoride.

  FIG. 8 is a diagram illustrating a high-speed flame spraying method according to one embodiment. FIG. 9 is a diagram illustrating an atmospheric pressure plasma spraying method according to one embodiment. For the thermal spraying in step S5, a high-speed flame spraying (HVOF) method shown in FIG. 8 or an atmospheric pressure plasma spraying (APS) method shown in FIG. 9 can be used.

  As shown in FIG. 8, the thermal spraying apparatus SA1 used in the HVOF method for forming the coating 104 includes a thermal spray gun SG1 and a slurry supply nozzle SN. The thermal spray gun SG1 has a combustion vessel BC defining a combustion chamber BS, a nozzle NG1 connected to the combustion vessel BC, and an ignition device ID. In the thermal spray gun SG1, a gas containing high-pressure oxygen and fuel is supplied to the combustion chamber BS, and the ignition device ID ignites the gas. Then, the flame (combustion flame) generated in the combustion chamber BS is narrowed by the nozzle NG1, and the flame is released from the nozzle NG1. When the slurry is supplied from the nozzle SN to the frame released in this way, the particles in the slurry become a molten or semi-molten body and are sprayed onto the product WP on which the film 104 is to be formed. .

  In the formation of the coating 104 by the HVOF method, as shown in FIG. 8, the slurry is separated from the tip of the nozzle NG1 in the direction along the central axis AX1 of the nozzle NG1 of the spray gun SG1 or the tip of the nozzle NG1. Supplied to the location. That is, the distance X from the tip of the nozzle NG1 to the slurry supply position is set to 0 mm or more.

  As shown in FIG. 9, the thermal spraying apparatus SA2 used in the APS method for forming the film 104 includes a thermal spray gun SG2 and a nozzle SN for supplying slurry. The thermal spray gun SG2 has a container PC defining a plasma generation space PS, a nozzle NG2 continuous with the container PC, and an electrode ET. The container PC is made of an insulator, and the nozzle NG2 is made of a conductor. The electrode ET is provided in the container PC. In the spray gun SG2, a working gas is supplied into the container PC, and a voltage is applied between the electrode ET and the nozzle NG2. Thereby, plasma of the working gas is generated, and the plasma is emitted from the nozzle NG2. When the slurry is supplied from the nozzle SN to the plasma thus emitted, the particles in the slurry become a molten or semi-molten body and are sprayed onto the product WP on which the film 104 is to be formed. .

  In the formation of the coating 104 by the APS method, as shown in FIG. 9, the slurry is separated from the tip of the nozzle NG2 in the direction along the central axis AX1 of the nozzle NG2 of the spray gun SG2, or the tip of the nozzle NG2. Supplied to the location. That is, the distance X from the tip of the nozzle NG2 to the slurry supply position is set to 0 mm or more.

  Also, in step S5 using either the HVOF method or the APS method, the slurry may include yttrium fluoride particles, a dispersion medium, and an organic dispersant. The dispersion medium is water or alcohol. The slurry contains yttrium fluoride particles at a mass ratio of 5 to 40%. The particle size of the yttrium fluoride particles is 1 μm or more and 8 μm or less. The average particle size of the particles is defined as a particle size measured by a laser diffraction / scattering method (microtrack method).

  When the coating 104 is formed by the thermal spraying described above, and then the mask MK2 and the mask MK3 are removed, the component is completed, and the manufacturing method PM ends.

  In this manufacturing method PM, since the film 104 is formed on the surface of the base whose surface has been adjusted, the surface roughness of the film 104 is reduced. Since the coating 104 has a small specific surface area, generation of particles from the coating 104 can be suppressed. Further, since the average particle size of the particles contained in the slurry is 1 μm or more and 8 μm or less, aggregation of the particles is suppressed, and a uniform film 104 is formed. Further, since the average particle diameter of the particles contained in the slurry is 1 μm or more and 8 μm or less, a film having a high interparticle bonding force can be formed. Further, since the slurry is supplied to the above-described position, the adhesion of the spray material to the inner wall of the nozzle of the spray gun or the like can be suppressed. As a result, occurrence of spitting is suppressed. Therefore, according to this manufacturing method PM, a film having a low porosity and a small specific surface area, that is, a dense film 104 is formed. According to the film 104, the surface fluctuation due to the exposure to the plasma is small, and the fluctuation of the process performance is small. Therefore, according to this manufacturing method PM, a film capable of suppressing generation of particles is provided.

  When the HVOF method is used in step S5 of the embodiment, the slurry is supplied at a position within a range of 0 mm or more and 100 mm or less in the direction along the central axis AX1 from the tip of the nozzle NG1 of the spray gun SG1. is there. That is, X shown in FIG. 8 is a distance within a range of 0 mm or more and 100 mm or less. In the step S5 of the embodiment, when the APS method is used, the position where the slurry is supplied is in a range of 0 mm or more and 30 mm or less in the direction along the central axis AX1 from the tip of the nozzle NG2 of the thermal spray gun SG2. Position. That is, X shown in FIG. 9 is a distance within a range of 0 mm or more and 30 mm or less.

  In addition, regardless of the HVOF method or the APS method used in the step S5, the angle θ shown in FIGS. 8 and 9 is 0 degree or an angle in a range of 45 degrees or more and 135 degrees or less. . Is the angle formed by the center axis AX2 of the nozzle SN with respect to the center axis AX1 on the tip side of the nozzle of the spray gun.

  In step S5 of one embodiment, the temperature of the product WP including the base material 102 during thermal spraying is set to a temperature of 100 ° C or more and 300 ° C or less. Since yttrium fluoride has a large coefficient of thermal expansion, when the sprayed particles of yttrium fluoride adhere to the surface of the substrate, the sprayed particles are rapidly cooled and solidified. This may cause cracks in the formed film. According to this embodiment, since the temperature of the product WP including the base material 102 is set to a temperature of 100 ° C. or more and 300 ° C. or less, it is possible to suppress the occurrence of cracks in the film 104.

  When the HVOF method is used in step S5, the acid-fuel ratio is set to a higher acid-fuel ratio than the stoichiometric ratio required for complete combustion of the fuel. Thus, the occurrence of soot due to incomplete combustion can be prevented, and the incorporation of soot into the film 104 can be prevented.

  Although various embodiments have been described above, various modifications can be made without being limited to the above-described embodiments. For example, a plasma processing apparatus using the above-described component having plasma resistance is not limited to a capacitively coupled plasma processing apparatus. The components having plasma resistance described above can be applied to any type of plasma processing apparatus such as an inductively coupled plasma processing apparatus or a plasma processing apparatus that generates plasma by microwaves.

  Hereinafter, an experiment performed for evaluating the manufacturing method PM and the film 104 will be described.

  <Evaluation regarding X and θ in thermal spraying in step S5 of manufacturing method PM>

  Using HVOF method and APS method, a sprayed coating made of yttrium fluoride was formed while variously changing X and θ shown in FIGS. 8 and 9. A slurry containing yttrium fluoride particles having an average particle size of 1.5 μm at a mass ratio of 35% was used for forming the thermal spray coating. In the thermal spraying, the temperature of the thermal spraying target, that is, the temperature of the product including the base material was set to 250 ° C.

Then, the formed thermal spray coating was evaluated based on the evaluation items described below. In the following evaluation items, “after plasma processing” means that the sample after the thermal spray coating is formed is placed in the plasma processing apparatus 10, and a gas containing CF 4, Ar, and O ₂ is supplied into the processing container 12. This means that the sprayed coating of the sample is exposed to plasma generated by setting the high frequency power of the first high frequency power supply 62 to 1500 W for 10 hours.

<Evaluation items>
[Waste]
The step after the plasma treatment between the masked area and the unmasked area of the sprayed coating of the sample is measured by a step gauge, and if a step equal to or more than the thickness of the sprayed coating is confirmed, the sample is depleted. It was determined that.
[Cracks / cracks]
In the case where a clear streak-like or network-like crack was generated in the thermal spray coating by visual inspection, it was evaluated as “cracked” or “cracked”. When a crack penetrating in the thickness direction of the sprayed coating or a continuous crack having a length of 30 μm or more is observed by SEM observation of the cross section of the sprayed coating, it is determined as “cracked” or “cracked”. did.
[Peeling]
It was judged that the thermal spray coating was peeled when the thermal spray coating was clearly peeled by visual inspection or when a gap was seen between the thermal spray coating and the base. In addition, when a continuous gap having a length of 50 μm or more was found at the interface between the sprayed coating and the base in SEM observation of the cross section of the sprayed coating, it was determined that the sprayed coating was peeled.
[Adhesion rate]
The ratio of the weight of the sprayed coating to the weight of the particles used was determined by calculation, and when the ratio was 1% or less, it was determined that the “adhesion rate was low”.
[Adhesion of material to spray gun nozzle]
When the adhesion of the molten particles to the spray gun was observed by visual inspection of the inner wall of the nozzle of the spray gun and the vicinity of the outlet of the nozzle, it was determined that the particles were melt-adhered.
[Particle evaluation]
A carbon tape was placed on the sprayed coating after the plasma treatment, and a polytetrafluoroethylene weight having a weight of 26 g was placed on the carbon tape. Next, after removing the weight, the carbon tape was peeled off, and the carbon tape was observed by SEM. Next, the ratio of the area of the transferred material to the total area of the carbon tape in the SEM image was calculated, and this was defined as the transfer rate. When the transfer rate is larger than the transfer rate of the thermal spray coating formed by the APS method using the slurry containing the particles of yttrium fluoride having an average particle diameter of 50 μm at the setting of X = 5 mm and θ = 90 degrees, The thermal spray coating to be evaluated was determined to be “particle defect”.

  Table 1 shows the values of X and θ, and the evaluation results of the formed thermal spray coating. In the evaluation results, “good” means that the thermal spray coating had good characteristics for all of the above evaluation items.

  As shown in Table 1, according to the HVOF method, when X was 130 mm, it was determined that "particle defect". In the HVOF method, when X was a negative value, fusion adhesion of particles was observed on the inner wall of the nozzle of the thermal spray gun. In addition, it was confirmed that a good thermal spray coating was obtained when X was 0 mm or more and 100 mm in the HVOF method. In addition, in the HVOF method, when θ was 30 degrees, it was determined that “the adhesion rate was low”. In addition, when θ was 150 degrees, fusion adhesion of particles was observed near the nozzle outlet of the spray gun. In addition, it was confirmed that when θ is 45 degrees or more and 135 degrees or less, a good thermal spray coating can be formed.

  Further, according to the APS method, when X was 40 mm, it was determined to be “particle defect”. Further, when X was a negative value, fusion adhesion of particles to the nozzle of the thermal spray gun was observed. Further, it was confirmed that when X was 0 mm or more and 30 mm or less, a good thermal spray coating could be formed. Further, in the APS method, when θ was 30 degrees, it was determined that “the adhesion rate was low”. In addition, when θ was 150 degrees, fusion adhesion of particles was observed near the nozzle outlet of the spray gun. Therefore, it was confirmed that when θ is 45 degrees or more and 135 degrees or less, a good thermal spray coating can be formed.

  <Evaluation of substrate temperature in thermal spraying in step S5 of production method PM>

  Using the HVOF method and the APS method, a sprayed coating made of yttrium fluoride was formed while variously changing the temperature of the product including the base material. A slurry containing yttrium fluoride particles having an average particle size of 1.5 μm at a mass ratio of 35% was used for forming the thermal spray coating. In the HVOF method, X was set to 50 mm and θ was set to 90 degrees. In the APS method, X was set to 15 mm and θ was set to 90 degrees. Then, the formed thermal spray coating was evaluated from the viewpoint of the cracks in the evaluation items described above and the deformation of the base material. Table 2 shows the evaluation results.

  As shown in Table 2, when the temperature of the product including the base material is 48 ° C, cracks occur in the sprayed coating, and when the temperature is 350 ° C, relatively large deformation occurs in the base material. Was. When the temperature was 100 ° C. or more and 300 ° C. or less, no crack was generated and no deformation of the substrate occurred. From this fact, it was confirmed that when the substrate temperature during thermal spraying was 100 ° C. or more and 300 ° C. or less, no crack was generated in the thermal sprayed coating and no deformation of the substrate was generated.

  <Evaluation on Particle Size of Particles in Slurry in Thermal Spraying in Step S5 of Manufacturing Method PM>

  Using HVOF method and APS method, a sprayed coating made of yttrium fluoride was formed while changing the average particle size of the yttrium fluoride particles in various ways. A slurry containing particles of yttrium fluoride at a mass ratio of 35% was used for forming the thermal spray coating. In the HVOF method, X was set to 50 mm and θ was set to 90 degrees. In the APS method, X was set to 15 mm and θ was set to 90 degrees. Further, the temperature of the product including the base material was set to 250 ° C. Then, the prepared thermal spray coating was evaluated according to the evaluation items described above. Further, the porosity and the film thickness of the formed thermal spray coating were determined. Table 3 shows the evaluation results.

  As shown in Table 3, when the average particle size of the particles in the slurry was 15 μm, it was determined to be “particle defect”, and when the average particle size was 0.82 μm, cracks were observed in the sprayed coating. When the average particle size was 1 μm or more and 8 μm or less, a good thermal spray coating was obtained. From this, it was confirmed that when the average particle diameter of the particles in the slurry was 1 μm or more and 8 μm or less, a good thermal spray coating could be formed. In addition, when the porosity of the formed thermal spray coating was 4.4%, it was determined to be “particle defect”, and when the porosity was 4% or less, no defect regarding the particles was confirmed. From this, it was confirmed that when the porosity was 4% or less, generation of particles was suppressed. When the thickness of the formed thermal spray coating was 5 μm, it was determined that the consumption after the plasma treatment was large. Further, when the thickness of the formed thermal spray coating was 250 μm, peeling was observed. From this, if the thickness of the thermal spray coating is 10 μm or more and 200 μm or less, it is possible to maintain the thermal spray coating even if it is consumed by the plasma treatment, and to prevent peeling of the thermal spray coating. Was confirmed.

  <Evaluation on surface roughness>

  By adjusting the surface roughness of the base, thermal spray coatings made of yttrium fluoride having different surface roughness were prepared. The HVOF method was used for thermal spraying. For the thermal spraying, a slurry containing yttrium fluoride particles having an average particle diameter of 1.5 μm at a mass ratio of 35% was used. In the HVOF method, X was set to 50 mm and θ was set to 90 degrees. When the particle evaluation of the above-mentioned evaluation items was performed, it was determined that “particle defect” was obtained when Ra was 4.8 μm, and the particle defect was determined when Ra was 4.5 μm and 3.5 μm. Not observed. From this, it was confirmed that the generation of particles is suppressed when the thermal spray coating has a surface roughness Ra of 4.5 μm or less.

  <Evaluation on dielectric breakdown voltage>

  A single-layer film made of yttrium fluoride was formed on a substrate while variously changing the film thickness of the film. Further, a multilayer film including an intermediate layer made of yttrium oxide having a thickness of 100 μm and a film made of yttrium fluoride having a thickness of 100 μm was formed on the base material. Then, the dielectric breakdown voltage of the formed single-layer film and the multilayer film was measured while changing the temperature. FIG. 10 shows the dielectric breakdown voltage of the single-layer film. In FIG. 10, the vertical axis indicates the breakdown voltage, the upper numerical value along the horizontal axis indicates the film thickness (μm) of the single-layer film, and the lower numerical value indicates the film temperature at the time of measuring the dielectric breakdown voltage. (° C.). "RT" indicates room temperature. FIG. 11 shows the dielectric breakdown voltage of the multilayer film. In FIG. 11, the vertical axis represents the breakdown voltage, and the numerical values shown along the horizontal axis represent the temperature (° C.) of the multilayer film at the time of measuring the breakdown voltage.

  As shown in FIG. 10, it was confirmed that the larger the thickness of the single-layer film made of yttrium fluoride, the higher the breakdown voltage, but the breakdown voltage was reduced in a high temperature environment. As shown in FIG. 11, by interposing an intermediate layer made of yttrium oxide having a thickness of 100 μm between the film and the substrate, the dielectric breakdown voltage of the multilayer film can be reduced even in a high temperature environment. It was confirmed that the suppression was possible.

  <Evaluation of the number of particles generated by plasma processing in a plasma processing apparatus including an electrode plate 34 having a film and an intermediate layer>

An yttrium fluoride intermediate layer having a thickness of 150 μm and having a thickness of 50 μm, a surface roughness (arithmetic mean roughness Ra) of 1.43 μm, and a porosity of 2.39% is provided on an aluminum substrate. Processing apparatus 10 having an electrode plate 34 (refer to component 100A in FIG. 3) having a coating (hereinafter referred to as “coating 1”) on an intermediate layer (hereinafter, “plasma processing apparatus 10 having coating 1”). Was prepared, and a wafer was mounted on the mounting table PD of the plasma processing apparatus 10 to perform plasma processing. In the plasma processing, a mixed gas including a C ₄ F ₈ gas, a C ₄ F ₆ gas, a CF ₄ gas, an Ar gas, an O ₂ gas, and a CH ₄ gas is supplied into the processing chamber 12 at a total flow rate of 425 sccm, and The total power of the high-frequency power of the high-frequency power supply 62 and the high-frequency power of the second high-frequency power supply 64 was set to 5000 W. Then, the relationship between the processing time of the plasma processing and the number of particles generated on the wafer was determined. In the measurement of the number of particles, the number of particles having a size of 45 nm or more was measured using Surfscan SP2 manufactured by KLA-Tencor.

  Further, it has a 150 μm-thick yttrium oxide intermediate layer, a 50 μm-thick film having a surface roughness (arithmetic mean roughness Ra) of 5.48 μm and a porosity of 5.21%. A plasma processing apparatus 10 (hereinafter, referred to as a “plasma processing apparatus 10 having a coating 2”) having an electrode plate 34 having a “coating 2” on an intermediate layer is prepared, and a mounting table PD of the plasma processing apparatus 10 is provided. A wafer was mounted on the wafer, and the same plasma processing as that performed when a plasma processing apparatus having the coating 1 was used was performed. Then, as in the case of using the plasma processing apparatus having the coating 1, the relationship between the processing time of the plasma processing and the number of particles generated on the wafer was determined.

  The graph of FIG. 12 shows the relationship between the processing time of the plasma processing and the number of particles. In FIG. 12, the horizontal axis indicates the processing time (h) of the plasma processing, and the vertical axis indicates the number of particles. Further, a solid line in the graph indicates a regression line of the number of particles generated at each of a plurality of processing times when the plasma processing apparatus 10 having the film 1 is used, and a dashed line in the graph indicates the film 2 2 shows a regression line of the number of particles generated in each of a plurality of processing times when the plasma processing apparatus 10 having the above configuration is used. As shown in FIG. 12, the number of particles generated by the plasma processing in the plasma processing apparatus 10 having the coating 1 is considerably smaller than the number of particles generated by the plasma processing in the plasma processing apparatus 10 having the coating 2. Was. That is, according to the plasma processing apparatus provided with the electrode plate 34 having a coating having a porosity of 4% or less and a surface roughness (arithmetic mean roughness Ra) of 4.5 μm or less, generation of particles by plasma processing is performed. Was confirmed to be suppressed.

  DESCRIPTION OF SYMBOLS 10 ... Plasma processing apparatus, 30 ... Upper electrode, 34 ... Electrode plate, 50 ... Exhaust device, 62 ... First high frequency power supply, 100, 100A, 100B, 100C ... Parts, 102 ... Base material, 104 ... Coating, 106 ... Alumite film, 108 ... intermediate layer, 110 ... intermediate layer, 112 ... intermediate layer, ML ... multilayer film, SA1, SA2 ... spraying device, SG1, SG2 ... spraying gun, NG1, NG2 ... nozzle, SN ... nozzle (nozzle for slurry) ).

Claims (11)

A method for manufacturing a part for a plasma processing apparatus,
A step of adjusting the surface of the surface of the base to form a coating by thermal spraying, the surface of the base, including the surface of the substrate, or the surface of the layer formed on the surface of the substrate, the step,
Forming a coating on the surface by spraying yttrium fluoride,
Including
In the step of forming the coating, high-speed flame spraying method is used,
In the step of forming the coating, 1 μm or more and 8 μm at a position away from the nozzle of the spray gun or a tip position of the nozzle of the spray gun in a direction along the central axis of the nozzle of the spray gun that discharges the frame. Supply a slurry containing particles of yttrium fluoride having the following average particle size,
The position slurry is supplied, outside of the nozzle, and, Ri position der ranging from the tip 100mm below more 0mm of the nozzle in the direction along the central axis,
Arithmetic average roughness Ra of the surface of the coating is 4.5 μm or less;
Production method.   The angle formed between the center axis of the slurry supply nozzle for supplying the slurry and the center axis of the spray gun nozzle on the tip side of the spray gun nozzle is 45 degrees or more and 135 degrees or less. 2. The production method according to 1.   3. The method according to claim 1, wherein in the step of forming the film, the temperature of the base material is set to a temperature of 100 ° C. or more and 300 ° C. or less. 4.   The manufacturing method according to any one of claims 1 to 3, further comprising a step of forming a first intermediate layer made of yttrium oxide between the substrate and the film.   The method according to claim 4, further comprising forming a second intermediate layer between the first intermediate layer and the coating.   The manufacturing method according to claim 5, wherein the second intermediate layer has a linear expansion coefficient between a linear expansion coefficient of the first intermediate layer and a linear expansion coefficient of the coating.   The method according to claim 6, wherein the second intermediate layer is formed of a sprayed yttria-stabilized zirconia coating or a sprayed forsterite coating.   The manufacturing method according to claim 5, wherein the second intermediate layer is formed of an alumina thermal spray coating or a gray alumina thermal spray coating.   The method according to claim 4, further comprising a step of forming another intermediate layer between the base material and the first intermediate layer.   The manufacturing method according to claim 9, wherein the another intermediate layer is formed of an alumina thermal spray coating or a gray alumina thermal spray coating.   The method according to any one of claims 1 to 10, further comprising a step of forming an alumite film on the surface of the substrate.

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