CN102150233A - Electrostatic chuck (esc) comprising a double buffer layer (dbl) to reduce thermal stress - Google Patents
Electrostatic chuck (esc) comprising a double buffer layer (dbl) to reduce thermal stress Download PDFInfo
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- CN102150233A CN102150233A CN2009801358976A CN200980135897A CN102150233A CN 102150233 A CN102150233 A CN 102150233A CN 2009801358976 A CN2009801358976 A CN 2009801358976A CN 200980135897 A CN200980135897 A CN 200980135897A CN 102150233 A CN102150233 A CN 102150233A
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- main body
- terminal
- resilient coating
- substrate
- electrostatic chuck
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Links
- 230000008646 thermal stress Effects 0.000 title claims abstract description 38
- 238000003780 insertion Methods 0.000 claims abstract description 15
- 230000037431 insertion Effects 0.000 claims abstract description 15
- 239000000758 substrate Substances 0.000 claims description 83
- 238000000576 coating method Methods 0.000 claims description 82
- 239000011248 coating agent Substances 0.000 claims description 76
- 238000000034 method Methods 0.000 claims description 32
- 239000012212 insulator Substances 0.000 claims description 10
- 229910010293 ceramic material Inorganic materials 0.000 claims description 9
- 239000000463 material Substances 0.000 claims description 7
- 230000003746 surface roughness Effects 0.000 claims description 7
- 238000009413 insulation Methods 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 4
- 238000004519 manufacturing process Methods 0.000 claims description 3
- 238000007750 plasma spraying Methods 0.000 claims description 3
- 230000015572 biosynthetic process Effects 0.000 claims description 2
- 239000010410 layer Substances 0.000 description 25
- 230000008569 process Effects 0.000 description 20
- 208000037656 Respiratory Sounds Diseases 0.000 description 11
- 238000005516 engineering process Methods 0.000 description 7
- 239000004411 aluminium Substances 0.000 description 6
- 229910052782 aluminium Inorganic materials 0.000 description 6
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 6
- 238000010891 electric arc Methods 0.000 description 5
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
- MCMNRKCIXSYSNV-UHFFFAOYSA-N Zirconium dioxide Chemical compound O=[Zr]=O MCMNRKCIXSYSNV-UHFFFAOYSA-N 0.000 description 4
- 239000012790 adhesive layer Substances 0.000 description 4
- TWHBEKGYWPPYQL-UHFFFAOYSA-N aluminium carbide Chemical compound [C-4].[C-4].[C-4].[Al+3].[Al+3].[Al+3].[Al+3] TWHBEKGYWPPYQL-UHFFFAOYSA-N 0.000 description 4
- 238000000151 deposition Methods 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 4
- 229910010271 silicon carbide Inorganic materials 0.000 description 4
- MTPVUVINMAGMJL-UHFFFAOYSA-N trimethyl(1,1,2,2,2-pentafluoroethyl)silane Chemical compound C[Si](C)(C)C(F)(F)C(F)(F)F MTPVUVINMAGMJL-UHFFFAOYSA-N 0.000 description 4
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 description 3
- 238000013461 design Methods 0.000 description 3
- 238000010586 diagram Methods 0.000 description 3
- 238000002513 implantation Methods 0.000 description 3
- 230000004048 modification Effects 0.000 description 3
- 238000012986 modification Methods 0.000 description 3
- 230000002093 peripheral effect Effects 0.000 description 3
- 230000035899 viability Effects 0.000 description 3
- KLZUFWVZNOTSEM-UHFFFAOYSA-K Aluminium flouride Chemical compound F[Al](F)F KLZUFWVZNOTSEM-UHFFFAOYSA-K 0.000 description 2
- PIGFYZPCRLYGLF-UHFFFAOYSA-N Aluminum nitride Chemical compound [Al]#N PIGFYZPCRLYGLF-UHFFFAOYSA-N 0.000 description 2
- 229910052580 B4C Inorganic materials 0.000 description 2
- PZNSFCLAULLKQX-UHFFFAOYSA-N Boron nitride Chemical compound N#B PZNSFCLAULLKQX-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- 229910004298 SiO 2 Inorganic materials 0.000 description 2
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 2
- 229910000323 aluminium silicate Inorganic materials 0.000 description 2
- INAHAJYZKVIDIZ-UHFFFAOYSA-N boron carbide Chemical compound B12B3B4C32B41 INAHAJYZKVIDIZ-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 230000008859 change Effects 0.000 description 2
- 238000005229 chemical vapour deposition Methods 0.000 description 2
- 230000008878 coupling Effects 0.000 description 2
- 238000010168 coupling process Methods 0.000 description 2
- 238000005859 coupling reaction Methods 0.000 description 2
- HNPSIPDUKPIQMN-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Al]O[Al]=O HNPSIPDUKPIQMN-UHFFFAOYSA-N 0.000 description 2
- KZHJGOXRZJKJNY-UHFFFAOYSA-N dioxosilane;oxo(oxoalumanyloxy)alumane Chemical compound O=[Si]=O.O=[Si]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O.O=[Al]O[Al]=O KZHJGOXRZJKJNY-UHFFFAOYSA-N 0.000 description 2
- 239000002223 garnet Substances 0.000 description 2
- 239000007943 implant Substances 0.000 description 2
- 239000000203 mixture Substances 0.000 description 2
- 229910052863 mullite Inorganic materials 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 238000001020 plasma etching Methods 0.000 description 2
- 239000011148 porous material Substances 0.000 description 2
- 239000000377 silicon dioxide Substances 0.000 description 2
- 235000012239 silicon dioxide Nutrition 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- 239000010936 titanium Substances 0.000 description 2
- 229910052727 yttrium Inorganic materials 0.000 description 2
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 description 2
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- 229910000545 Nickel–aluminium alloy Inorganic materials 0.000 description 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 description 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000008901 benefit Effects 0.000 description 1
- 238000005352 clarification Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 230000005611 electricity Effects 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 229910001092 metal group alloy Inorganic materials 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052759 nickel Inorganic materials 0.000 description 1
- 238000012545 processing Methods 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 229910052710 silicon Inorganic materials 0.000 description 1
- 239000010703 silicon Substances 0.000 description 1
- 230000035882 stress Effects 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 description 1
- 229910052721 tungsten Inorganic materials 0.000 description 1
- 239000010937 tungsten Substances 0.000 description 1
Images
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/67005—Apparatus not specifically provided for elsewhere
- H01L21/67011—Apparatus for manufacture or treatment
- H01L21/67098—Apparatus for thermal treatment
-
- H—ELECTRICITY
- H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
- H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
- H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect
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- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Jigs For Machine Tools (AREA)
Abstract
Disclosed is an electrostatic chuck comprising a buffer layer to absorb thermal stress. The electrostatic chuck comprises: a main body having transverse holes; a base plate disposed on the upper side of said main body and including insertion holes corresponding to said transverse holes, and an electrode layer partially exposed through said insertion holes, to secure an object to be held by the electrostatic energy of said electrode layer; a terminal unit having a contact terminal connected to said electrode layer through said transverse holes and said insertion holes; and a buffer layer disposed at at least one boundary between said contact terminal, said main body, and said base plate so as to be able to absorb thermal stress from said main body.; According to the present invention, the buffer layer of the electrostatic chuck absorbs thermal stress, thereby minimising cracks due to thermal stress and extending the life of the chuck.
Description
Technical field
The embodiment of example relates to a kind of electrostatic chuck in process chamber, especially relate to a kind of electrostatic chuck that is coated with resilient coating, this resilient coating is used for reducing using the thermal stress of the process that electrostatic chuck handles and makes described thermal stress cause the crackle minimum of the electrostatic chuck that produces.
Background technology
By and large, be used to make the technology of semiconductor device and the board device such as LCD (LCD) device, comprise depositing operation such as chemical vapor deposition (CVD) and the etch process such as reactive ion etching process.In above-mentioned depositing operation and etch process, need to be fastened on such as the substrate silicon wafer and the face glass on the electrode slice in the process chamber, to improve reliability of technology.Usually with electrostatic chuck (ESC) described substrate is fastened on the electrode slice in the described process chamber.
Fig. 1 is the cutaway view that is shown in the existing electrostatic chuck in the process chamber.
With reference to figure 1, existing electrostatic chuck 100 comprises the main body 101 that contains aluminium, the top substrate 102 that is positioned with substrate regularly, be installed in substrate 102 inner and produce electrostatic force electrode 103, be used for insulating component 105 that high pressure is applied to the terminal 104 of described electrode and surrounds terminal 104.
By terminal 104 high pressure is applied on the electrode 103 from external power source, can produces electrostatic force at electrode 103 places, then, under the effect of electrostatic force, the substrate on the substrate 102 is attracted to substrate 102, and is secured on the electrostatic chuck 100.
In existing depositing operation or etch process, substrate 102 is by the plasma in the described process chamber (plasma) heating, because the plasma temperature height in the process chamber, the substrate 102 of electrostatic chuck 100 is to be under the big thermal stress usually.Especially, heat is delivered to aluminium main body 101 from substrate 102, thereby makes main body 101 in all directions thermal expansion.Because the hot coefficient of main body 101, substrate 102 and insulating component 105 is different usually, thermal stress can be applied on main body 101, substrate 102 and the insulating component 105.In existing electrostatic chuck 100, A place, the upper end thermal stress maximum of the borderline region that contacts with each other at main body 101, substrate 102 and insulating component 105.
Because the strength ratio main body 101 of substrate 102 and the intensity of insulating component 105 are much smaller, much bigger in the thermal stress at A place, the upper end of described borderline region to the influence of the influence comparison main body 101 of substrate 102 and insulating component 105, therefore below near the substrate 102 at the A place, upper end of described borderline region, partly crack.Along with electrostatic chuck 100 is repeated operation, described crackle can be diffused into the upper section of substrate 102 up to whole base plate 102, and final, substrate 102 is owing to crackle ruptures.
Therefore, need a kind of improved electrostatic chuck strongly, wherein the crackle that produces because of thermal stress can be minimized, thereby prevents the fault of electrostatic chuck.
Summary of the invention
Example embodiment provide a kind of comprise resilient coating be used for electrostatic chuck terminal unit and the method that forms described terminal unit, described resilient coating is used for being absorbed in the thermal stress of the operating process of using electrostatic chuck.
Example embodiment also provides electrostatic chuck with above-mentioned terminal unit and the method for making this electrostatic chuck.
According to some example embodiment, a kind of electrostatic chuck (ESC) is provided, comprise main body with through hole; Be arranged on the substrate on the described main body, on this substrate, be fastened with substrate, the electrode that described substrate has the insertion portion corresponding with the through hole of described main body and is positioned the inboard of described substrate and comes out by described insertion portion part by electrostatic force; Have by the through hole of described main body and the insertion portion of described substrate and form the terminal unit that contacts with described electrode; And resilient coating, described resilient coating is arranged on the borderline region place between in described terminal and described main body and the described substrate at least one and absorbs the thermal stress of described main body.
In example embodiment, described main body comprises conductive of material, described terminal unit comprises the insulating component between the terminal of intervention in described main body and described through hole, makes described resilient coating be set at the borderline region place between described main body and the described insulating component.Described resilient coating further is set at the borderline region place between described insulating component and the described substrate.
An example embodiment, described substrate and described resilient coating comprise the material based on ceramic material.The porosity of described resilient coating equals or is higher than the porosity of described substrate.The porosity of described resilient coating be about 2% to about 10% scope.The thickness of described resilient coating be at about 100 μ m to the scope of about 250 μ m.The surface roughness of described resilient coating be at about 0.1 μ m to the scope of about 2 μ m.
According to some example embodiment, a kind of terminal unit that is used for electrostatic chuck is provided, comprise being electrically connected to power supply and electricity being imposed on electrode to produce the terminal of electrostatic force; The insulating component of terminal is stated in the local envelopment residence, makes described terminal and surrounding environment be opened by described insulating component electric insulation; And be arranged on in described terminal and the described insulating component at least one and absorb from around the resilient coating of the thermal stress that applies.
According to some example embodiment, provide a kind of method of making electrostatic chuck.Preparation has the main body of through hole, provides terminal unit corresponding to described through hole.Described terminal has the thermal stress that is used to be absorbed on the described body surfaces.Described main body and described terminal unit can make up mutually, make described terminal unit penetrate described through hole, and outstanding from the top surface of described main body.On described main body, form infrabasal plate, make the top surface of described terminal come out, on described infrabasal plate, form electrode, make described electrode contact with the terminal unit that is come out.On described infrabasal plate and described electrode, form upper substrate.
According to some example embodiment, provide a kind of method that is formed for the terminal unit of electrostatic chuck.Prepare terminal by this way, promptly make described terminal penetrate the main body of described electrostatic chuck, and be electrically connected to external power source.Described terminal is inserted in the insulator, makes the end of described terminal come out.Form resilient coating on the exposure of described terminal, this resilient coating absorbs the thermal stress that surrounding environment applies.
In an example embodiment, described resilient coating forms in the following manner: remove described insulator from described terminal, thereby come out in the end of described terminal, and be coated with described resilient coating on the terminal that comes out.Described resilient coating can be coated on the described terminal by the atmospheric plasma spraying coating process.After forming described resilient coating, can further on described resilient coating, carry out chamfer angle technique, thereby make the edge part of resilient coating become circle.
According to some example embodiment, the thermal stress of described ESC can be absorbed into the resilient coating among the described ESC, therefore can fully reduce the crackle that is caused by described thermal stress, thereby increase the viability of ESC.
Description of drawings
Will more be expressly understood example embodiment in conjunction with the accompanying drawings from following detailed.
Fig. 1 is the cutaway view that is shown in the electrostatic chuck of the prior art in the process chamber;
Fig. 2 is the cutaway view of diagram electrostatic chuck of the example embodiment of design according to the present invention.
Embodiment
Hereinafter will various example embodiment be described more fully with reference to the accompanying drawing that shows some example embodiment.The present invention can be embodied as many different forms, and can not be interpreted as being subjected to the restriction of the embodiment enumerated in this place.On the contrary, it is in order to make this disclosure detailed and complete that these example embodiment are provided, and makes those skilled in the art understand scope of the present invention fully.In the accompanying drawings, for the sake of clarity, the layer wherein and the size and the relative size in zone may be exaggerated.
Should understand, when claim element or layer be another element or layer " on ", during with another element or layer " coupling " or " connection ", it can be directly on another element or layer, directly be connected or couple with other elements or layer, or have in the middle of occuping element or layer.On the contrary, when claim an element be " directly on another element or layer ", with another element or layer " directly coupling " or " directly being connected ", so with regard to do not occupy middle element or layer.Middle in the whole text same numeral refers to components identical.Word as used in this specification " and/or " comprise one or all multinomial combinations in the project of being enumerated that is associated.
Describe various parts, element, zone, layer and/or part though should be understood that words such as may using first, second, third, etc. herein, these parts, element, zone, layer and/or part should not be subjected to the restriction of these words.These words only are used to distinguish parts, element, zone, layer or part and another zone, layer or part.Therefore, when not departing from instruction of the present invention, can be known as second parts, assembly, zone, layer or part of first parts of Tao Luning, assembly, zone, layer or part hereinafter.
In this manual, may use such as " in ... below ", " ... following ", D score, " in ... top ", " on " or the like and so on the word relevant with the locus so that the relationship description of illustrated parts or feature and another parts or feature gets up easily in the accompanying drawing.It being understood that the word relevant with the locus is intended to contain except the orientation of the device described in the accompanying drawing, device in use or the different azimuth in the operation.For example, if the device in the accompanying drawing turns, then be described as other parts or feature " below " or the orientation of the parts of " below " be " top " in described other parts or feature.Therefore, the word of example " ... following " can contain above and following two orientation.This device can do other towards (rotate 90 degree or other towards), the description of relative space position as used in this specification will be done corresponding explanation.
The purpose of used term is not intended to limit the present invention just in order to describe concrete example embodiment in this specification.Singulative " one " and " described " also are intended to comprise plural form as used in this manual, unless clearly statement is arranged in context in addition.Further should be understood that, wording used in specification " comprises ", offered some clarification on and had described feature, integral body (integer), step, operation, element and/or assembly, do not occurred or additional one or more further features, integral body (integer), step, operation, element, assembly and/or their combination but do not get rid of.
In this article, describe the embodiment of example of the present invention with reference to cutaway view, these cutaway views are schematic diagrames of the Utopian embodiment of the present invention (and intermediate structure).Like this, expection for example can produce the variation because of the shape shown that manufacturing technology and/or tolerance caused.Therefore, the embodiment of example of the present invention is not appreciated that and is subjected to the restriction of the given shape in illustrated zone herein, but comprises for example by the deviation of making the shape that is caused.For example, be shown as the implantation region of rectangle, have circle or curved feature usually and/or form the gradient of implanting density, but not change to the regional binary of non-implantation from implanting the zone at its edge.Similarly, by implant to form imbed the district can cause this imbed the district and the surface that takes place to implant between the zone in some implantation are arranged.Therefore, the essence in shown zone is schematically, and its shape and be not intended to illustrate the accurate shape of component area, also is not intended to limit scope of the present invention.
Common understand consistent of those of ordinary skill of the meaning of all terms (comprising scientific and technical terminology) that use in this specification unless otherwise defined, and the affiliated art of the present invention.It will also be appreciated that such as defined those terms in the common dictionary be appreciated that have with correlative technology field in aggregatio mentium, should not be construed as idealized or excessive mechanical implication, unless otherwise defined.
Next will describe example embodiment with reference to the accompanying drawings in detail.
Fig. 2 is the cutaway view of diagram electrostatic chuck of the example embodiment of design according to the present invention.
With reference to figure 2, the electrostatic chuck (ESC) 200 of example embodiment of design comprises main body 201, is installed on the main body 201 and the inner substrate 202 that comprises electrode 203, the resilient coating 206 that has the terminal unit of the insulating component 205 that the high pressure from the external power source (not shown) is applied to the terminal 204 of electrode 203 and surrounds terminal 204 and be used to absorb the thermal stress of main body 201 according to the present invention.Substrate (not shown) pending in process chamber is fixedly positioned on the substrate 202, and resilient coating 206 is located at least a portion of borderline region of main body 201 and substrate 202.
In example embodiment, main body 201 can comprise the conductive of material such as aluminium, and as the base support of electrostatic chuck 200.Middle body in main body 201 prepares through hole 207, comprises that the terminal unit of terminal 204 and insulating component 205 inserts described through hole 207, thereby penetrates described main body 201.
In example embodiment, substrate 202 can comprise that dielectric substance also can be sprayed (APS) skill by atmospheric plasma and be coated on the main body 201.Substrate 202 can comprise the ceramic material with dielectric substance.The example of ceramic material can comprise aluminium oxide (Al
2O
3), yittrium oxide (Y
2O
3), aluminium oxide (Al
2O
3) and yittrium oxide (Y
2O
3) mixture, zirconia (ZrO
2), aluminium carbide (AlC), titanium nitride (TiN), aluminium nitride (AlN), titanium carbide (TiC), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (CeO
2), titanium oxide (TiO
2), boron carbide (BxCy), boron nitride (BN), silicon dioxide (SiO
2), carborundum (SiC), yttrium aluminium garnet (YAG, Y
3Al
5O
12), mullite (aluminosilicate, 3Al
2O
32SiO
3), aluminum fluoride (AlF
3) or the like.These materials may be used singly or in combin.
Described substrate is fastened on the substrate 202, and locatees regularly by electrostatic force, and described electrostatic force can produce by the electric energy that is applied on the electrode 203 that is installed in substrate 202 inside.The top surface of substrate 202 is flat, thereby described substrate flatly can be positioned on the substrate 202.In the embodiment of this example, electrode 203 is arranged essentially parallel to the top surface of substrate 202 and installs.
Middle body at substrate 202 provides insertion portion 208, and terminal 204 is inserted in the insertion portion 208.Terminal 204 can form with electrode 203 via the insertion portion 208 of substrate 202 and contact.Therefore, terminal 204 can pass through hole 207 and insert in the main bodys 201, and the insertion portion 208 that passes substrate 202 extends to electrode 203.That is to say that terminal 204 can pass the through hole 207 of main body 201 and the insertion portion 208 of substrate 202 is couple on the electrode 203.
As mentioned above, electrode 203 can be installed in the substrate 202, via terminal 204 high pressure is applied on the electrode 203.Therefore, electrostatic force can be applied to the substrate on the substrate 202, this substrate is secured on the substrate 202.That is to say that described substrate is fixedly positioned on the substrate 202 by described electrostatic force.
For example, electrode 203 can comprise the conductive of material such as nickel (Ni).
In illustrated embodiments of the invention, can electrode 203 be formed in the substrate 202 by continuous atmospheric plasma spraying (APS) technology.At first, can on main body 201, form infrabasal plate 202a, can on infrabasal plate 202a, form the electrode layer (not shown) via APS coating processes or silk-screen printing technique via an APS coating processes.Can described electrode layer be formed electrode 203 on infrabasal plate 202a by Patternized technique.Then, can on infrabasal plate 202a, be formed with the upper substrate 202b of abundant thickness, with coated electrode 203 by the 2nd APS coating processes.
For example, infrabasal plate layer 202a can be formed the thickness of about 400 μ m to 600 μ m, electrode 203 can have the thickness of about 5 μ m to about 65 μ m.In addition, upper substrate 202b can be formed the thickness of about 400 μ m to about 750 μ m.
In an example embodiment, insulating component 205 is got involved between main body 201 and terminal 204, thereby makes main body 201 and terminal 204 electric insulation mutually.For example, insulating component 205 can comprise sintered ceramic material, because the hole much less in the sintered ceramic material, thereby the electric insulation between main body 201 and the terminal 204 is maximized.
For example, insulating component 205 can have the thickness of about 2000 μ m, and has about 0.1 μ m to the surface roughness of about 2 μ m, so that skin resistance minimizes, and prevents electric arc.In this example, insulating component 205 can have about 1 μ m or littler surface roughness.
In an example embodiment, resilient coating 206 is positioned on the part of first borderline region of main body 201 and insulating component 205, on the 3rd borderline region of second borderline region of substrate 202 and insulating component 205 and substrate 202 and terminal 204.For example, resilient coating 206 can comprise ceramic material.The example of ceramic material comprises aluminium oxide (Al
2O
3), yittrium oxide (Y
2O
3), aluminium oxide (Al
2O
3) and yittrium oxide (Y
2O
3) mixture, zirconia (ZrO
2), aluminium carbide (AlC), titanium nitride (TiN), aluminium nitride (AlN), titanium carbide (TiC), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (CeO
2), titanium oxide (TiO
2), boron carbide (BxCy), boron nitride (BN), silicon dioxide (SiO
2), carborundum (SiC), yttrium aluminium garnet (YAG, Y
3Al
5O
12), mullite (aluminosilicate, 3Al
2O
32SiO
3), aluminum fluoride (AlF
3) or the like.These ceramic materials may be used singly or in combin.Can form resilient coating 206 at described first, second by the APS coating processes with the 3rd borderline region.
For example, resilient coating 206 can have the thickness of about 100 μ m to about 250 μ m, more preferably, has the thickness of about 150 μ m to about 200 μ m.When resilient coating 206 has thickness greater than about 250 μ m, can in resilient coating 206, be easy to produce pore, can cause in the resilient coating 206 like this and crackle occur, when less than the thickness of about 100 μ m, make resilient coating 206 be difficult to absorb the thermal stress of main body 201 to such an extent as to resilient coating 206 is often too thin.
In addition, the same with insulating component 205, resilient coating 206 can have about 0.1 μ m to the surface roughness of about 2 μ m, so that skin resistance minimizes, and prevents electric arc.In this example, resilient coating 206 can have about 1 μ m or littler surface roughness.Resilient coating 206 can absorb the thermal stress of electrostatic chuck 200, and the increase of this thermal stress Yin Wendu in plasma deposition technology or plasma etching process process causes.The aluminium main body of existing ESC can be owing to the high temperature of existing ESC in plasma process causes thermal expansion, various thermal stress can impose on existing ESC, in same plasma process, the thermal expansion of the main body of ESC of the present invention can be absorbed in the resilient coating 206.Therefore, the thermal stress of the main body of described ESC can not be applied on the described insulating component.Especially, resilient coating 206 can prevent fully that stress from concentrating on the edge point (corresponding to the part A among Fig. 1) of described ESC, therefore prevented at the main body 201 of described ESC and the crackle of the borderline region between the insulating component 205, thereby increased the viability of described ESC.
In this example embodiment, the porosity of resilient coating 206 (porosity) is identical or bigger than the porosity of substrate 202 with the porosity of substrate 202, thereby makes the absorbability maximization of thermal stress and the crackle of described ESC is minimized.That is to say that the porosity of resilient coating 206 is identical with the porosity of infrabasal plate 202a or upper substrate 202b, perhaps big than them.For example, resilient coating 206 can have about 2% to about 10% porosity, more preferably, and about 2% to about 7%.When the porosity of resilient coating 206 surpasses 10%, described hole in the described resilient coating is often too much, can reduce the intensity of resilient coating 206 like this, resilient coating 206 is separated from insulating component 205 and substrate 202, and be lower than about 2% porosity, often crack easily and promptly, make resilient coating 206 be difficult to absorb thermal stress.
Further, the edge part of resilient coating 206 can form circle or chamfering, thereby can remove sharp-pointed part from resilient coating 206.When described resilient coating comprised sharp-pointed edge part, described thermal stress was concentrated in described sharp-pointed part, and crackle can be rapidly grows out along part from the sharp edge of resilient coating 206.
Refer again to Fig. 2,, cause the center thickness A of infrabasal plate 202a bigger than the peripheral thickness B of infrabasal plate 202a because main body 201 has inclined-plane S at the middle body of ESC200.Therefore, infrabasal plate 202a is littler than the density of locating at the ESC200 periphery in the density of ESC200 central portion office.But,, can fully reduce by the electric current that pore leaked, thereby prevent between main body 201 and electrode 203, to produce electric arc at the infrabasal plate 202a of the central portion office of ESC200 because the thickness of infrabasal plate 202a is bigger.
In addition, because infrabasal plate 202a has bigger thickness in the central portion office of ESC200, can fully prevent to crack, thereby prevent between main body 201 and electrode 203, to produce electric arc at described first borderline region of main body 201 and insulating component 205.
Between main body 201 and infrabasal plate 202a, can add the adhesive layer (not shown), thereby firmly main body 201 and infrabasal plate 202a be tightened together.The hot coefficient of described adhesive layer can change between the hot coefficient of the hot coefficient of described main body and infrabasal plate 202a, thereby can make the thermal stress of main body 201 be absorbed into described adhesive layer, and can not be applied to fully on the infrabasal plate 202a.Described adhesive layer can comprise the metal alloy such as nickel-aluminium alloy.
Refer again to Fig. 2, on main body 201, terminal 204 and insulating component 205, can form infrabasal plate 202a, promptly make infrabasal plate 202a at the top surface of the peripheral part of ESC200 top surface height than terminal 204 with this structure.Therefore, upper substrate 202b at the center thickness C of ESC central portion office greater than peripheral thickness D in the periphery office of ESC200.Therefore, when high pressure is applied on the electrode 203 by terminal 204, can fully prevent from electrode 203 and be positioned between the substrate on the upper substrate 202b to produce electric arc.
Afterwards, describe the method for making ESC200 shown in Figure 2 in detail.
At first, described terminal unit is installed on the main body 201.Described terminal unit comprises terminal 204, insulating component 205 and resilient coating 206.Terminal 204 can be electrically connected to external power source, with operation ESC200.Insulating component 205 surrounds terminal 204, thereby main body 201 and terminal 204 can be electrically insulated from each other.Resilient coating 206 is formed on the part of insulating component 205, can absorb the thermal stress among the ESC200, thereby reduces among the ESC200 because the crackle that thermal stress causes.
Can individual processing have the insulator (not shown) of preliminary dimension and shape and prepare terminal 204.Then, terminal 204 is inserted through in the insulator of handling, thereby the combination of terminal 204 and described insulator can be provided with such structure, promptly make described terminal to be lived by described insulator local envelopment.The insulator that surrounds terminal 204 is as insulating component 205.Then, on the part of terminal 204, form resilient coating 206.For example, can remove described insulator, thereby form the buffer area at terminal 204 places from the end of terminal 204.On the described buffer area of the end of terminal 204, form resilient coating 206.
In addition, the edge part of terminal 204 and insulating component 205 can form circle, or chamfering.Afterwards, can be by planarization process with resilient coating 206 levelings, thus reduce its surface roughness.The through hole 207 that comprises the terminal unit through-body 201 of terminal 204, insulating component 205 and resilient coating 206, thus described terminal unit and main body 201 are combined.
Then, on main body 201, form substrate 202, promptly make electrode 203 can be installed in the inside of substrate 202 with this structure.That is to say that infrabasal plate 202a at first is formed on the main body 201, on infrabasal plate 202a, form described electrode layer (not shown) then.Described electrode layer can be patterned as electrode 203 on infrabasal plate 202a.Then, on infrabasal plate 202a, form the upper substrate 202b of adequate thickness with coated electrode 203.
Particularly, can carry out planarizing process on the surface of infrabasal plate 202a, the surface of electrode layer and the surface of upper substrate 202b respectively, thereby reduce the roughness on described surface fully, increase surface flatness.
In this example embodiment, on main body 201, can form infrabasal plate 202a with this structure, promptly make the top surface of terminal 204 of through-body 201 can not covered by infrabasal plate 202a.For example, before forming substrate layer 202a, can after forming substrate 202a, this mask layer be removed from terminal 204 earlier at the top surface formation mask layer (not shown) of terminal 204.In addition, can on main body 201, form the infrabasal plate (not shown) of preparation, can remove the middle body of the infrabasal plate of this preparation from main body 201 parts, thereby form an opening (not shown), the top surface of terminal 204 can be come out by this opening.
According to some example embodiment, the thermal stress of described ESC can be absorbed by the resilient coating among the described ESC, thereby can fully reduce the crackle that is caused by thermal stress, thereby has increased the viability of described ESC.
Above-mentioned is illustrating of example embodiment, should not be understood that it is its restriction.Though described some example embodiment, those skilled in the art should know, and do not break away from itself under the situation of innovative teachings of the present invention and advantage, can carry out many possible modifications to example embodiment.Correspondingly, all such modifications are intended to be included in the category of the present invention that claim limits.In the claims, the sentence formula that device adds function is intended to contain the structure that is used to carry out the function that is described in detail described herein, and it is not only contained structural equivalent and also contains equivalent structure simultaneously.Therefore, should be understood that, the description of front is illustrating of various example embodiment, should not be read as the restriction that is subjected to the concrete example embodiment that disclosed, and the modification of disclosed example embodiment and other example embodiment is intended to be comprised in the category of claim.
Claims (14)
1. electrostatic chuck comprises:
Main body with through hole;
Be arranged on the substrate on the described main body, on this substrate, be fastened with substrate, the electrode that described substrate has the insertion portion corresponding with the through hole of described main body and is located within the described substrate and come out by the part by described insertion portion by electrostatic force;
Terminal unit, its insertion portion that has by the through hole of described main body and described substrate forms the terminal that contacts with described electrode; And
Resilient coating, it is arranged on the borderline region between at least one and the described terminal in described main body and the described substrate, and absorbs the thermal stress of described main body.
2. electrostatic chuck according to claim 1, wherein said main body comprises conductive of material, described terminal unit comprises the insulating component that is arranged between described main body and the terminal in described through hole, makes described resilient coating be set at the borderline region between described main body and the described insulating component.
3. electrostatic chuck according to claim 2, wherein said resilient coating also are set at the borderline region between described insulating component and the described substrate.
4. electrostatic chuck according to claim 1, wherein said substrate and described resilient coating comprise the material based on ceramic material.
5. electrostatic chuck according to claim 4, the porosity of wherein said resilient coating equals or is higher than the porosity of described substrate.
6. electrostatic chuck according to claim 5, the porosity of wherein said resilient coating about 2% to about 10% scope.
7. electrostatic chuck according to claim 1, the thickness of wherein said resilient coating at about 100 μ m to the scope of about 250 μ m.
8. electrostatic chuck according to claim 1, the surface roughness of wherein said resilient coating at about 0.1 μ m to the scope of about 2 μ m.
9. terminal unit that is used for electrostatic chuck comprises:
Be electrically connected to power supply and give electrode power supply to produce the terminal of electrostatic force;
The insulating component of terminal is stated in the local envelopment residence, makes described terminal by described insulating component and surrounding environment electric insulation; And
Resilient coating, its be arranged at least one of described terminal and described insulating component and absorb from around the thermal stress that applies.
10. method of making electrostatic chuck comprises:
Preparation has the main body of through hole;
Provide corresponding to described through hole and have the terminal unit of resilient coating, described resilient coating is used to absorb the thermal stress of the main body on the described body surfaces;
Make up described main body and described terminal unit, make described terminal unit penetrate described through hole, and outstanding from the top surface of described main body;
On described main body, form infrabasal plate, make the top surface of described terminal come out;
On described infrabasal plate, form electrode, make described electrode form and contact with the described terminal unit that comes out; And
On described infrabasal plate and described electrode, form upper substrate.
11. a method that is formed for the terminal unit of electrostatic chuck comprises:
Formation penetrates the main body of described electrostatic chuck and is electrically connected to the terminal of external power source;
Described terminal is inserted in the insulator, make the end of described terminal come out; And
On the exposure of described terminal, form resilient coating, this resilient coating absorb from around the thermal stress that applies.
12. method according to claim 11 wherein forms described resilient coating and comprises:
Remove described insulator from described terminal, thereby come out in the end of described terminal; And
Described resilient coating is coated on the described terminal that comes out.
13. method according to claim 12 wherein applies described resilient coating and is included in and carries out the atmospheric plasma spraying coating process on the terminal that is come out.
14. method according to claim 11 after forming described resilient coating, also comprises and carries out chamfer angle technique, thereby make the edge part become circle.
Applications Claiming Priority (3)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1020080088972A KR100995250B1 (en) | 2008-09-09 | 2008-09-09 | Electrostatic chuck containing buffer layer for reducing thermal stress |
| KR10-2008-0088972 | 2008-09-09 | ||
| PCT/KR2009/005070 WO2010030102A2 (en) | 2008-09-09 | 2009-09-08 | Electrostatic chuck (esc) comprising a double buffer layer (dbl) to reduce thermal stress |
Related Child Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101207103A Division CN103227138A (en) | 2008-09-09 | 2009-09-08 | Electrostatic chuck (esc) comprising a double buffer layer (dbl) to reduce thermal stress |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| CN102150233A true CN102150233A (en) | 2011-08-10 |
| CN102150233B CN102150233B (en) | 2014-10-15 |
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ID=42005613
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN200980135897.6A Active CN102150233B (en) | 2008-09-09 | 2009-09-08 | Electrostatic chuck (ESC) comprising a double buffer layer (DBL) to reduce thermal stress |
| CN2013101207103A Pending CN103227138A (en) | 2008-09-09 | 2009-09-08 | Electrostatic chuck (esc) comprising a double buffer layer (dbl) to reduce thermal stress |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN2013101207103A Pending CN103227138A (en) | 2008-09-09 | 2009-09-08 | Electrostatic chuck (esc) comprising a double buffer layer (dbl) to reduce thermal stress |
Country Status (4)
| Country | Link |
|---|---|
| KR (1) | KR100995250B1 (en) |
| CN (2) | CN102150233B (en) |
| TW (1) | TWI401768B (en) |
| WO (1) | WO2010030102A2 (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325725A (en) * | 2012-03-21 | 2013-09-25 | 高美科株式会社 | Static chuck |
| CN112385091A (en) * | 2018-06-28 | 2021-02-19 | 势必锐航空系统有限公司 | Systems and methods employing active thermal buffer elements to improve joule heating |
Families Citing this family (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN102610476B (en) * | 2012-03-12 | 2015-05-27 | 中微半导体设备(上海)有限公司 | Electrostatic chuck |
| KR102119867B1 (en) * | 2013-10-21 | 2020-06-09 | 주식회사 미코세라믹스 | Electrostatic chuck |
| JP7162500B2 (en) * | 2018-11-09 | 2022-10-28 | 株式会社Kelk | Temperature controller |
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| KR100280634B1 (en) * | 1996-05-05 | 2001-02-01 | 세이이치로 미야타 | Electric heating element and electrostatic chuck using the same |
| JP4173212B2 (en) * | 1997-10-08 | 2008-10-29 | 東京エレクトロン株式会社 | Holding device and processing apparatus equipped with holding device |
| JP3771722B2 (en) * | 1998-07-31 | 2006-04-26 | 京セラ株式会社 | Wafer support member |
| WO2001024581A1 (en) * | 1999-09-29 | 2001-04-05 | Tokyo Electron Limited | Multi-zone resistance heater |
| JP3859914B2 (en) * | 1999-10-08 | 2006-12-20 | 東芝セラミックス株式会社 | Ceramic-metal composite part having metal terminal and method for manufacturing the same |
| JP2001287130A (en) * | 2000-04-07 | 2001-10-16 | Taiheiyo Cement Corp | Electrostatic chuck device and its manufacturing method |
| JP2001313331A (en) * | 2000-04-28 | 2001-11-09 | Sumitomo Osaka Cement Co Ltd | Electrostatic attraction device |
| JP4753460B2 (en) * | 2000-08-16 | 2011-08-24 | 株式会社クリエイティブ テクノロジー | Electrostatic chuck and manufacturing method thereof |
| US7161121B1 (en) * | 2001-04-30 | 2007-01-09 | Lam Research Corporation | Electrostatic chuck having radial temperature control capability |
| KR20030044499A (en) * | 2001-11-30 | 2003-06-09 | 삼성전자주식회사 | Electro static chuck and Method of Manufacturing Thereof |
| JP4510745B2 (en) * | 2005-10-28 | 2010-07-28 | 日本碍子株式会社 | Bonding structure of ceramic substrate and power supply connector |
| KR101066798B1 (en) * | 2006-03-14 | 2011-09-23 | 엘아이지에이디피 주식회사 | Esc, support table, chamber and the manufacture methods thereof |
| US7701693B2 (en) * | 2006-09-13 | 2010-04-20 | Ngk Insulators, Ltd. | Electrostatic chuck with heater and manufacturing method thereof |
| CN101512749B (en) * | 2006-09-19 | 2010-07-28 | 创意科技股份有限公司 | Power feed structure and manufacturing method of electrostatic chuck, and method for regeneration of power feed structure of electrostatic chuck |
-
2008
- 2008-09-09 KR KR1020080088972A patent/KR100995250B1/en active IP Right Grant
-
2009
- 2009-09-07 TW TW098130090A patent/TWI401768B/en active
- 2009-09-08 WO PCT/KR2009/005070 patent/WO2010030102A2/en active Application Filing
- 2009-09-08 CN CN200980135897.6A patent/CN102150233B/en active Active
- 2009-09-08 CN CN2013101207103A patent/CN103227138A/en active Pending
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN103325725A (en) * | 2012-03-21 | 2013-09-25 | 高美科株式会社 | Static chuck |
| CN112385091A (en) * | 2018-06-28 | 2021-02-19 | 势必锐航空系统有限公司 | Systems and methods employing active thermal buffer elements to improve joule heating |
Also Published As
| Publication number | Publication date |
|---|---|
| WO2010030102A2 (en) | 2010-03-18 |
| CN103227138A (en) | 2013-07-31 |
| CN102150233B (en) | 2014-10-15 |
| TWI401768B (en) | 2013-07-11 |
| KR100995250B1 (en) | 2010-11-18 |
| KR20100030168A (en) | 2010-03-18 |
| WO2010030102A3 (en) | 2010-07-01 |
| TW201021154A (en) | 2010-06-01 |
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