CN102150233B - Electrostatic chuck (ESC) comprising a double buffer layer (DBL) to reduce thermal stress - Google Patents

Electrostatic chuck (ESC) comprising a double buffer layer (DBL) to reduce thermal stress Download PDF

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Publication number
CN102150233B
CN102150233B CN200980135897.6A CN200980135897A CN102150233B CN 102150233 B CN102150233 B CN 102150233B CN 200980135897 A CN200980135897 A CN 200980135897A CN 102150233 B CN102150233 B CN 102150233B
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China
Prior art keywords
main body
substrate
resilient coating
electrostatic chuck
terminal
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CN102150233A (en
Inventor
崔镇植
崔正德
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Meike Co ltd
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KOH MI DOO KK
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
    • H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
    • H01L21/6833—Details of electrostatic chucks
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/324—Thermal treatment for modifying the properties of semiconductor bodies, e.g. annealing, sintering
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67098—Apparatus for thermal treatment
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02N—ELECTRIC MACHINES NOT OTHERWISE PROVIDED FOR
    • H02N13/00—Clutches or holding devices using electrostatic attraction, e.g. using Johnson-Rahbek effect

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
  • Jigs For Machine Tools (AREA)

Abstract

Disclosed is an electrostatic chuck comprising a buffer layer to absorb thermal stress. The electrostatic chuck comprises: a main body having transverse holes; a base plate disposed on the upper side of said main body and including insertion holes corresponding to said transverse holes, and an electrode layer partially exposed through said insertion holes, to secure an object to be held by the electrostatic energy of said electrode layer; a terminal unit having a contact terminal connected to said electrode layer through said transverse holes and said insertion holes; and a buffer layer disposed at at least one boundary between said contact terminal, said main body, and said base plate so as to be able to absorb thermal stress from said main body.; According to the present invention, the buffer layer of the electrostatic chuck absorbs thermal stress, thereby minimising cracks due to thermal stress and extending the life of the chuck.

Description

Include the electrostatic chuck of the resilient coating for reducing thermal stress
Technical field
The embodiment of example relates to a kind of electrostatic chuck in process chamber, especially relate to a kind of electrostatic chuck that is coated with resilient coating, this resilient coating is for the thermal stress of the process that reduces to use electrostatic chuck and process and make described thermal stress cause the crackle minimum of the electrostatic chuck producing.
Background technology
By and large, for the manufacture of the technique of semiconductor device and the board device such as liquid crystal display (LCD) device, comprise depositing operation such as chemical vapour deposition (CVD) (CVD) and the etch process such as reactive ion etching process.In above-mentioned depositing operation and etch process, the substrate such as silicon wafer and face glass need to be fastened on the electrode slice in process chamber, to improve reliability of technology.Conventionally with electrostatic chuck (ESC), described substrate is fastened on the electrode slice in described process chamber.
Fig. 1 is the cutaway view that is shown in the existing electrostatic chuck in process chamber.
With reference to figure 1, existing electrostatic chuck 100 comprises the main body 101, the substrate 102 that is positioned with regularly substrate above that contain aluminium, be arranged on substrate 102 inner and produce the electrode 103 of electrostatic force, for high pressure being applied to the terminal 104 of described electrode and surrounding the insulating component 105 of terminal 104.
By terminal 104, high pressure is applied to electrode 103 from external power source, can produces electrostatic force at electrode 103 places, then, under the effect of electrostatic force, the substrate on substrate 102 is attracted to substrate 102, and is secured on electrostatic chuck 100.
In existing depositing operation or etch process, substrate 102 is by the plasma in described process chamber (plasma) heating, and because the plasma temperature in process chamber is high, the substrate 102 of electrostatic chuck 100 is under large thermal stress conventionally.Especially, heat is delivered to aluminium main body 101 from substrate 102, thereby makes main body 101 in all directions thermal expansion.Because the hot coefficient of main body 101, substrate 102 and insulating component 105 is conventionally different, thermal stress can be applied on main body 101, substrate 102 and insulating component 105.In existing electrostatic chuck 100, A place, the upper end thermal stress maximum of the borderline region contacting with each other at main body 101, substrate 102 and insulating component 105.
Due to the strength ratio main body 101 of substrate 102 and the intensity of insulating component 105 much smaller, impact comparison main body 101 in the thermal stress at A place, the upper end of described borderline region on substrate 102 and the impact of insulating component 105 are much bigger, therefore below the substrate 102 at the A place, upper end near described borderline region, partly crack.Along with electrostatic chuck 100 is repeated operation, described crackle can be diffused into the upper section of substrate 102 until whole substrate 102, and final, substrate 102 is because crackle ruptures.
Therefore, strongly need a kind of improved electrostatic chuck, the crackle wherein producing because of thermal stress can be minimized, thereby prevents the fault of electrostatic chuck.
Summary of the invention
Example embodiment provide a kind of comprise resilient coating for electrostatic chuck terminal unit and form the method for described terminal unit, described resilient coating is for being absorbed in the thermal stress of the operating process that uses electrostatic chuck.
Example embodiment also provides the electrostatic chuck with above-mentioned terminal unit and the method for manufacturing this electrostatic chuck.
According to some example embodiment, a kind of electrostatic chuck (ESC) is provided, comprise the main body with through hole; Be arranged on the substrate in described main body, on this substrate, be fastened with substrate by electrostatic force, the electrode that described substrate has the insertion portion corresponding with the through hole of described main body and is positioned the inner side of described substrate and comes out by described insertion portion part; Have by the through hole of described main body and the insertion portion of described substrate and form with described electrode the terminal unit contacting; And resilient coating, described resilient coating is arranged on the borderline region place between at least one in described terminal and described main body and described substrate and absorbs the thermal stress of described main body.
In example embodiment, described main body comprises conductive of material, described terminal unit comprises the insulating component of getting involved between the terminal in described main body and described through hole, makes described resilient coating be arranged on the borderline region place between described main body and described insulating component.Described resilient coating is further arranged on the borderline region place between described insulating component and described substrate.
An example embodiment, described substrate and described resilient coating comprise the material based on ceramic material.The porosity of described resilient coating equals or higher than the porosity of described substrate.The porosity of described resilient coating be about 2% to about 10% scope.The thickness of described resilient coating is in the scope of about 250 μ m at about 100 μ m.The surface roughness of described resilient coating is in the scope of about 2 μ m at about 0.1 μ m.
According to some example embodiment, a kind of terminal unit for electrostatic chuck is provided, comprise and be electrically connected to power supply and electricity is imposed on to electrode to produce the terminal of electrostatic force; The insulating component of terminal is stated in local envelopment residence, and described terminal and surrounding environment are opened by described insulating component electric insulation; And be arranged at least one in described terminal and described insulating component and absorb from around the resilient coating of the thermal stress that applies.
According to some example embodiment, provide a kind of method of manufacturing electrostatic chuck.Preparation has the main body of through hole, corresponding to described through hole providing end subelement.Described terminal has for being absorbed in the thermal stress in described body surfaces.Described main body and described terminal unit can combine mutually, make described terminal unit penetrate described through hole, and outstanding from the top surface of described main body.In described main body, form infrabasal plate, the top surface of described terminal is come out, on described infrabasal plate, form electrode, described electrode is contacted with come out terminal unit.On described infrabasal plate and described electrode, form upper substrate.
According to some example embodiment, provide a kind of method of the terminal unit that is formed for electrostatic chuck.Prepare by this way terminal, make described terminal penetrate the main body of described electrostatic chuck, and be electrically connected to external power source.Described terminal is inserted in insulator, is come out in the end of described terminal.In the exposure of described terminal, form resilient coating, this resilient coating absorbs the thermal stress that surrounding environment applies.
In an example embodiment, described resilient coating forms in the following manner: remove described insulator from described terminal, thereby come out in the end of described terminal, and be coated with described resilient coating on the terminal coming out.Described resilient coating can be coated on described terminal by atmospheric plasma spraying coating process.After forming described resilient coating, can further on described resilient coating, carry out chamfer angle technique, thereby make the edge part of resilient coating become circle.
According to some example embodiment, the thermal stress of described ESC can be absorbed into the resilient coating in described ESC, therefore can fully reduce the crackle being caused by described thermal stress, thereby has increased the viability of ESC.
Brief description of the drawings
Will more clearly understand by reference to the accompanying drawings example embodiment from detailed description below.
Fig. 1 is the cutaway view that is shown in the electrostatic chuck of the prior art in process chamber;
Fig. 2 is the cutaway view of diagram electrostatic chuck of the example embodiment of design according to the present invention.
Embodiment
Below with reference to the accompanying drawing that shows some example embodiment, various example embodiment are described more fully.The present invention can be embodied as many different forms, and can not be interpreted as being subject to the restriction of the embodiment of enumerating in this place.On the contrary, it is in order to make this disclosure detailed and complete that these example embodiment are provided, and makes those skilled in the art understand scope of the present invention completely.In the accompanying drawings, for the sake of clarity, layer wherein and size and the relative size in region may be exaggerated.
Should understand, when claim element or layer be another element or layer " on ", during with another element or layer " coupling " or " connection ", it can be directly on another element or layer, be directly connected or couple with other elements or layer, or have element in the middle of occuping or layer.On the contrary, when claim element be " directly on another element or layer ", with another element or layer " directly coupling " or " being directly connected ", so just do not occupy middle element or layer.Middle same numeral refers to identical element in the whole text.Word "and/or" as used in this specification comprises the one or more all combinations in the enumerated project being associated.
Although should be understood that herein and may describe various parts, element, region, layer and/or part by words such as first, second, third, etc., these parts, element, region, layer and/or part should not be subject to the restriction of these words.These words are only for distinguishing parts, element, region, layer or part and another region, layer or part.Therefore, in the time not departing from instruction of the present invention, first component, assembly, region, the layer of below discussing or partly can be known as second component, assembly, region, layer or part.
In this manual, may use such as " in ... below ", " ... below ", D score, " in ... top ", " on " etc. and so on the word relevant to locus so that the relationship description of illustrated parts or feature and another parts or feature gets up easily in accompanying drawing.It being understood that the word relevant to locus is intended to contain except the orientation of the device described in accompanying drawing, the different azimuth of device in use or in operation.For example, if the device in accompanying drawing turns, be described as other parts or feature " below " or the orientation of the parts of " below " be " top " in described other parts or feature.Therefore, the word of example " ... can contain above and two orientation below below ".This device can do other towards (rotate 90 degree or other towards), the description of relative space position as used in this specification will be done explanation accordingly.
In this specification, the object of term used, just in order to describe concrete example embodiment, is not intended to limit the present invention.Singulative " one " and " described " are also intended to comprise plural form as used in this description, unless separately there is clearly statement in context.Further should be understood that, wording used in specification " comprises ", clearly state and had described feature, entirety (integer), step, operation, element and/or assembly, occurred or additional one or more further features, entirety (integer), step, operation, element, assembly and/or their combination but do not get rid of.
In this article, describe the embodiment of example of the present invention with reference to cutaway view, these cutaway views are schematic diagrames of the Utopian embodiment of the present invention (and intermediate structure).Like this, expection for example can produce the variation of the diagram shape causing because of manufacturing technology and/or tolerance.Therefore, the embodiment of example of the present invention is not appreciated that and is subject to the restriction of the given shape in illustrated region herein, but for example comprises the deviation by the shape causing.For example, be shown as the implantation region of rectangle, conventionally there is circle or curved feature and/or form the gradient of implanting density at its edge, but not change to the binary in non-implantation region from implanting region.Similarly, form by implantation imbed district can cause this imbed district and occur implant surface between region in have some implantation.Therefore, the essence in shown region is schematically, and its shape be not intended to illustrate the accurate shape of component area, is also not intended to limit scope of the present invention.
Under the meaning of all terms (comprising scientific and technical terminology) that use in this specification unless otherwise defined, and the present invention, the those of ordinary skill of art is common understood consistent.It will also be appreciated that such as defined those terms in common dictionary and be appreciated that the meaning having with correlative technology field is consistent, should not be construed as idealized or excessive mechanical implication, unless otherwise defined.
Next describe example embodiment in detail with reference to accompanying drawing.
Fig. 2 is the cutaway view of diagram electrostatic chuck of the example embodiment of design according to the present invention.
With reference to figure 2, according to the present invention the electrostatic chuck (ESC) 200 of example embodiment of design comprise main body 201, be arranged in main body 201 and the inner substrate 202 that comprises electrode 203, have by be applied to the terminal 204 of electrode 203 from the high pressure of external power source (not shown) and surround terminal 204 insulating component 205 terminal unit and for absorbing the resilient coating 206 of thermal stress of main body 201.Substrate (not shown) pending in process chamber is fixedly positioned on substrate 202, and resilient coating 206 is located at least a portion of borderline region of main body 201 and substrate 202.
In example embodiment, main body 201 can comprise the conductive of material such as aluminium, and as the base support of electrostatic chuck 200.Prepare through hole 207 at the middle body of main body 201, comprise that the terminal unit of terminal 204 and insulating component 205 inserts described through hole 207, thereby penetrate described main body 201.
In example embodiment, substrate 202 can comprise that dielectric substance also can be sprayed by atmospheric plasma (APS) skill and be coated in main body 201.Substrate 202 can comprise the ceramic material with dielectric substance.The example of ceramic material can comprise aluminium oxide (Al 2o 3), yittrium oxide (Y 2o 3), aluminium oxide (Al 2o 3) and yittrium oxide (Y 2o 3) mixture, zirconia (ZrO 2), aluminium carbide (AlC), titanium nitride (TiN), aluminium nitride (AlN), titanium carbide (TiC), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (CeO 2), titanium oxide (TiO 2), boron carbide (BxCy), boron nitride (BN), silicon dioxide (SiO 2), carborundum (SiC), yttrium aluminium garnet (YAG, Y 3al 5o 12), mullite (aluminosilicate, 3Al 2o 32SiO 3), aluminum fluoride (AlF 3) etc.These materials may be used singly or in combin.
Described substrate is fastened on substrate 202, and locates regularly by electrostatic force, and described electrostatic force can produce by the electric energy being applied on the electrode 203 that is arranged on substrate 202 inside.The top surface of substrate 202 is flat, thereby described substrate flatly can be positioned on substrate 202.In the embodiment of this example, electrode 203 is arranged essentially parallel to the top surface of substrate 202 and installs.
Provide insertion portion 208 at the middle body of substrate 202, terminal 204 is inserted in insertion portion 208.Terminal 204 can form and contact with electrode 203 via the insertion portion of substrate 202 208.Therefore, terminal 204 can insert in main body 201 through through hole 207, and extends to electrode 203 through the insertion portion 208 of substrate 202.That is to say, terminal 204 can be couple on electrode 203 through the through hole 207 of main body 201 and the insertion portion 208 of substrate 202.
As mentioned above, electrode 203 can be arranged in substrate 202, via terminal 204, high pressure is applied on electrode 203.Therefore, electrostatic force can be applied to the substrate on substrate 202, this substrate is secured on substrate 202.That is to say, described substrate is fixedly positioned on substrate 202 by described electrostatic force.
For example, electrode 203 can comprise the conductive of material such as nickel (Ni).
In illustrated embodiments of the invention, can electrode 203 be formed in substrate 202 by continuous atmospheric plasma spraying (APS) technique.First, can in main body 201, form infrabasal plate 202a via an APS coating processes, can on infrabasal plate 202a, form electrode layer (not shown) via APS coating processes or silk-screen printing technique.Can described electrode layer be formed as on infrabasal plate 202a by Patternized technique to electrode 203.Then, can on infrabasal plate 202a, be formed with the upper substrate 202b of abundant thickness by the 2nd APS coating processes, with coated electrode 203.
For example, infrabasal plate layer 202a can be formed as to the thickness of about 400 μ m to 600 μ m, electrode 203 can have the thickness of about 5 μ m to about 65 μ m.In addition, upper substrate 202b can be formed as to the thickness of about 400 μ m to about 750 μ m.
Terminal 204 is connected to electrode 203 through through hole 207 and insertion portion 208, and high pressure is applied to electrode 203 from external power source (not shown) by terminal 204.Terminal 204 can comprise the conductive metal material such as tungsten (W), molybdenum (Mo) and titanium (Ti).
In an example embodiment, insulating component 205 is got involved between main body 201 and terminal 204, thereby makes main body 201 and terminal 204 electric insulation mutually.For example, insulating component 205 can comprise sintered ceramic material, because the hole much less in sintered ceramic material, thereby the electric insulation between main body 201 and terminal 204 is maximized.
For example, insulating component 205 can have the thickness of about 2000 μ m, and has about 0.1 μ m to the surface roughness of about 2 μ m, so that skin resistance minimizes, and prevents electric arc.In this example, insulating component 205 can have about 1 μ m or less surface roughness.
In an example embodiment, resilient coating 206 is positioned in the part of first side boundary region of main body 201 and insulating component 205, on substrate 202 and the second boundary region of insulating component 205 and the 3rd borderline region of substrate 202 and terminal 204.For example, resilient coating 206 can comprise ceramic material.The example of ceramic material comprises aluminium oxide (Al 2o 3), yittrium oxide (Y 2o 3), aluminium oxide (Al 2o 3) and yittrium oxide (Y 2o 3) mixture, zirconia (ZrO 2), aluminium carbide (AlC), titanium nitride (TiN), aluminium nitride (AlN), titanium carbide (TiC), magnesium oxide (MgO), calcium oxide (CaO), cerium oxide (CeO 2), titanium oxide (TiO 2), boron carbide (BxCy), boron nitride (BN), silicon dioxide (SiO 2), carborundum (SiC), yttrium aluminium garnet (YAG, Y 3al 5o 12), mullite (aluminosilicate, 3Al 2o 32SiO 3), aluminum fluoride (AlF 3) etc.These ceramic materials may be used singly or in combin.Can form resilient coating 206 by APS coating processes at described first, second, and third borderline region.
For example, resilient coating 206 can have the thickness of about 100 μ m to about 250 μ m, more preferably, has the thickness of about 150 μ m to about 200 μ m.In the time that resilient coating 206 has the thickness that is greater than about 250 μ m, can in resilient coating 206, be easy to produce pore, can cause in resilient coating 206 and occur crackle like this, in the time being less than the thickness of about 100 μ m, resilient coating 206 is often too thin to such an extent as to make resilient coating 206 be difficult to absorb the thermal stress of main body 201.
In addition, the same with insulating component 205, resilient coating 206 can have about 0.1 μ m to the surface roughness of about 2 μ m, so that skin resistance minimizes, and prevents electric arc.In this example, resilient coating 206 can have about 1 μ m or less surface roughness.Resilient coating 206 can absorb the thermal stress of electrostatic chuck 200, and the increase of this thermal stress Yin Wendu in plasma deposition technique or plasma etching process process causes.The aluminium main body of existing ESC can cause thermal expansion due to the high temperature of existing ESC in plasma process, various thermal stress can impose on existing ESC, in same plasma process, the thermal expansion of the main body of ESC of the present invention can be absorbed in resilient coating 206.Therefore, the thermal stress of the main body of described ESC can not be applied on described insulating component.Especially, resilient coating 206 can fully prevent that stress from concentrating on the edge point (corresponding to the part A in Fig. 1) of described ESC, therefore prevent the crackle of the borderline region between main body 201 and the insulating component 205 of described ESC, thereby increased the viability of described ESC.
In this example embodiment, the porosity of resilient coating 206 (porosity) is identical or larger than the porosity of substrate 202 with the porosity of substrate 202, thereby makes the absorbability of thermal stress maximize and make the crackle of described ESC to minimize.That is to say, the porosity of resilient coating 206 is identical with the porosity of infrabasal plate 202a or upper substrate 202b, or large than them.For example, resilient coating 206 can have about 2% to about 10% porosity, more preferably, and about 2% to about 7%.In the time that the porosity of resilient coating 206 exceedes 10%, described hole in described resilient coating is often too much, can reduce like this intensity of resilient coating 206, finally make resilient coating 206 separate from insulating component 205 and substrate 202, and lower than about 2% porosity, often easily and promptly crack, make resilient coating 206 be difficult to absorb thermal stress.
Further, the edge part of resilient coating 206 can be formed as circle or chamfering, thereby can remove sharp-pointed part from resilient coating 206.In the time that described resilient coating comprises sharp-pointed edge part, described thermal stress is concentrated in described sharp parts, crackle can be rapidly from the sharp edge of resilient coating 206 along some growth out.
Refer again to Fig. 2, because main body 201 has inclined-plane S at the middle body of ESC200, cause the center thickness A of infrabasal plate 202a larger than the peripheral thickness B of infrabasal plate 202a.Therefore, infrabasal plate 202a is little in the density at ESC200 periphery place at the density ratio of ESC200 central portion office.But, because the thickness of infrabasal plate 202a is larger, the electric current that fully minimizing is leaked by the pore of the infrabasal plate 202a of the central portion office at ESC200, thus prevent from producing electric arc between main body 201 and electrode 203.
In addition, because infrabasal plate 202a has larger thickness in the central portion office of ESC200, can fully prevent from cracking in the described first side boundary region of main body 201 and insulating component 205, thereby prevent from producing electric arc between main body 201 and electrode 203.
Between main body 201 and infrabasal plate 202a, can add adhesive layer (not shown), thereby firmly main body 201 and infrabasal plate 202a be tightened together.The hot coefficient of described adhesive layer can change between the hot coefficient of described main body and the hot coefficient of infrabasal plate 202a, thereby can make the thermal stress of main body 201 be absorbed into described adhesive layer, and can not be applied to completely on infrabasal plate 202a.Described adhesive layer can comprise the metal alloy such as nickel-aluminium alloy.
Refer again to Fig. 2, on main body 201, terminal 204 and insulating component 205, can, with this formation of structure infrabasal plate 202a, make infrabasal plate 202a higher than the top surface of terminal 204 at the top surface of the peripheral part of ESC200.Therefore, upper substrate 202b is greater than the peripheral thickness D in the periphery office of ESC200 at the center thickness C of ESC central portion office.Therefore,, in the time that high pressure is applied on electrode 203 by terminal 204, can fully prevent from electrode 203 and be positioned between the substrate on upper substrate 202b producing electric arc.
Afterwards, describe the method for the ESC200 shown in shop drawings 2 in detail.
First, described terminal unit is arranged in main body 201.Described terminal unit comprises terminal 204, insulating component 205 and resilient coating 206.Terminal 204 can be electrically connected to external power source, to operate ESC200.Insulating component 205 surrounds terminal 204, thereby main body 201 and terminal 204 can be electrically insulated from each other.Resilient coating 206 is formed in a part for insulating component 205, can absorb the thermal stress in ESC200, thereby reduces the crackle causing due to thermal stress in ESC200.
Can process separately and there is the insulator (not shown) of preliminary dimension and shape and prepare terminal 204.Then, terminal 204 is inserted through in the insulator of processing, thereby the combination of terminal 204 and described insulator can be provided with such structure, make described terminal to be lived by described insulator local envelopment.Surround the insulator of terminal 204 as insulating component 205.Then, in a part for terminal 204, form resilient coating 206.For example, can remove described insulator from the end of terminal 204, thereby in terminal 204 formation buffer areas, place.On the described buffer area of the end of terminal 204, form resilient coating 206.
In addition, the edge part of terminal 204 and insulating component 205 can be formed as circle, or chamfering.Afterwards, can be by planarization process by resilient coating 206 levelings, thus reduce its surface roughness.Comprise the through hole 207 of the terminal unit through-body 201 of terminal 204, insulating component 205 and resilient coating 206, thereby described terminal unit and main body 201 are combined.
Then, in main body 201, with this formation of structure substrate 202, make electrode 203 can be arranged on the inside of substrate 202.That is to say, first infrabasal plate 202a is formed in main body 201, then on infrabasal plate 202a, forms described electrode layer (not shown).Described electrode layer can be patterned as electrode 203 on infrabasal plate 202a.Then the upper substrate 202b that, forms adequate thickness on infrabasal plate 202a is with coated electrode 203.
Particularly, can carry out planarizing process on surface, the surface of electrode layer and the surface of upper substrate 202b of infrabasal plate 202a respectively, thereby reduce fully the roughness on described surface, increase surface flatness.
In this example embodiment, can be with this formation of structure infrabasal plate 202a in main body 201, make the top surface of the terminal 204 of through-body 201 can not covered by infrabasal plate 202a.For example, before forming substrate layer 202a, can first form mask layer (not shown) at the top surface of terminal 204, after forming substrate 202a, this mask layer be removed from terminal 204.In addition, can in main body 201, form the infrabasal plate (not shown) of preparation, can remove from main body 201 parts the middle body of the infrabasal plate of this preparation, thereby form an opening (not shown), the top surface of terminal 204 can be come out by this opening.
According to some example embodiment, the thermal stress of described ESC can be absorbed by the resilient coating in described ESC, thereby can fully reduce the crackle being caused by thermal stress, thereby has increased the viability of described ESC.
Above-mentioned is illustrating of example embodiment, should not be understood to be its restriction.Although described some example embodiment, those skilled in the art should know, and do not depart from itself in the situation of innovative teachings of the present invention and advantage, can carry out many possible amendments to example embodiment.Correspondingly, all such modifications are intended to be included in the category of the present invention that claim limits.In the claims, the sentence formula that device adds function is intended to contain described herein for carrying out the structure of described in detail function, and it is not only contained structural equivalent and also contains equivalent structure simultaneously.Therefore, should be understood that, description is above illustrating of various example embodiment, should not be read as the restriction that is subject to disclosed concrete example embodiment, the amendment of disclosed example embodiment and other example embodiment is intended to be comprised in the category of claim.

Claims (7)

1. an electrostatic chuck, comprising:
There is the main body of through hole;
Be arranged on the substrate in described main body, on this substrate, be fastened with substrate by electrostatic force, within described substrate has the insertion portion corresponding with the through hole of described main body and is located in described substrate and the electrode being come out by part by described insertion portion;
Terminal unit, it has by the through hole of described main body and the insertion portion of described substrate and forms with described electrode the terminal contacting; And
Resilient coating, it is arranged on the borderline region between described main body and described substrate the two and described terminal unit, and absorbs thermal stress;
Wherein said substrate and described resilient coating comprise the material based on ceramic material.
2. electrostatic chuck according to claim 1, wherein said main body comprises conductive of material, described terminal unit comprises the insulating component being arranged between described main body and the terminal in described through hole, makes described resilient coating be arranged on the borderline region between described main body and described insulating component.
3. electrostatic chuck according to claim 2, wherein said resilient coating is also arranged on the borderline region between described insulating component and described substrate.
4. electrostatic chuck according to claim 1, the porosity of wherein said resilient coating equals or higher than the porosity of described substrate.
5. electrostatic chuck according to claim 4, the porosity of wherein said resilient coating is in 2% to 10% scope.
6. electrostatic chuck according to claim 1, the thickness of wherein said resilient coating is in the scope of 100 μ m to 250 μ m.
7. electrostatic chuck according to claim 1, the surface roughness of wherein said resilient coating is in the scope of 0.1 μ m to 2 μ m.
CN200980135897.6A 2008-09-09 2009-09-08 Electrostatic chuck (ESC) comprising a double buffer layer (DBL) to reduce thermal stress Active CN102150233B (en)

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CN102150233A (en) 2011-08-10
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CN103227138A (en) 2013-07-31
TW201021154A (en) 2010-06-01
KR100995250B1 (en) 2010-11-18
KR20100030168A (en) 2010-03-18
TWI401768B (en) 2013-07-11

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