TWI662115B - 具有陽離子界面活性劑之硏光漿料 - Google Patents

具有陽離子界面活性劑之硏光漿料 Download PDF

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Publication number
TWI662115B
TWI662115B TW103126727A TW103126727A TWI662115B TW I662115 B TWI662115 B TW I662115B TW 103126727 A TW103126727 A TW 103126727A TW 103126727 A TW103126727 A TW 103126727A TW I662115 B TWI662115 B TW I662115B
Authority
TW
Taiwan
Prior art keywords
chloride
quaternary ammonium
salt
cationic surfactant
ammonium salt
Prior art date
Application number
TW103126727A
Other languages
English (en)
Chinese (zh)
Other versions
TW201510201A (zh
Inventor
霜 紀
Original Assignee
美商戴蒙創新公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 美商戴蒙創新公司 filed Critical 美商戴蒙創新公司
Publication of TW201510201A publication Critical patent/TW201510201A/zh
Application granted granted Critical
Publication of TWI662115B publication Critical patent/TWI662115B/zh

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Classifications

    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09GPOLISHING COMPOSITIONS; SKI WAXES
    • C09G1/00Polishing compositions
    • C09G1/02Polishing compositions containing abrasives or grinding agents
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1436Composite particles, e.g. coated particles
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1463Aqueous liquid suspensions
    • CCHEMISTRY; METALLURGY
    • C09DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
    • C09KMATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
    • C09K3/00Materials not provided for elsewhere
    • C09K3/14Anti-slip materials; Abrasives
    • C09K3/1454Abrasive powders, suspensions and pastes for polishing
    • C09K3/1472Non-aqueous liquid suspensions
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/304Mechanical treatment, e.g. grinding, polishing, cutting
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30625With simultaneous mechanical treatment, e.g. mechanico-chemical polishing

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • Organic Chemistry (AREA)
  • Materials Engineering (AREA)
  • General Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Composite Materials (AREA)
  • Finish Polishing, Edge Sharpening, And Grinding By Specific Grinding Devices (AREA)
  • Mechanical Treatment Of Semiconductor (AREA)
TW103126727A 2013-08-23 2014-08-05 具有陽離子界面活性劑之硏光漿料 TWI662115B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
US13/974,588 US9388328B2 (en) 2013-08-23 2013-08-23 Lapping slurry having a cationic surfactant
US13/974,588 2013-08-23

Publications (2)

Publication Number Publication Date
TW201510201A TW201510201A (zh) 2015-03-16
TWI662115B true TWI662115B (zh) 2019-06-11

Family

ID=51352791

Family Applications (1)

Application Number Title Priority Date Filing Date
TW103126727A TWI662115B (zh) 2013-08-23 2014-08-05 具有陽離子界面活性劑之硏光漿料

Country Status (13)

Country Link
US (1) US9388328B2 (enExample)
EP (2) EP3653683A1 (enExample)
JP (1) JP6491208B2 (enExample)
KR (1) KR102262967B1 (enExample)
CN (1) CN105579548A (enExample)
BR (1) BR112016003781B1 (enExample)
CA (1) CA2920837C (enExample)
DK (1) DK3036299T3 (enExample)
ES (1) ES2874899T3 (enExample)
MY (1) MY179920A (enExample)
SG (1) SG11201601038WA (enExample)
TW (1) TWI662115B (enExample)
WO (1) WO2015026477A1 (enExample)

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* Cited by examiner, † Cited by third party
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US9633831B2 (en) * 2013-08-26 2017-04-25 Rohm And Haas Electronic Materials Cmp Holdings, Inc. Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same
CN106147617A (zh) * 2015-04-28 2016-11-23 天津诺邦科技有限公司 一种多晶金刚石水基抛光液及其制备方法
EP3456624B1 (en) 2017-09-14 2020-01-01 AIRBUS HELICOPTERS DEUTSCHLAND GmbH A composite sandwich panel with a sandwich area
TWI640434B (zh) * 2017-12-14 2018-11-11 明志科技大學 Composite separator and preparation method thereof
CN108892509A (zh) * 2018-08-03 2018-11-27 宁波哈泰雷碳化物有限公司 一种用于陶瓷浇注成型的纳米碳化硅浆料的制备方法
CN114958302B (zh) * 2022-05-26 2024-06-18 珠海戴蒙斯科技有限公司 一种高效的研磨液及其制备方法和应用
CN120858152A (zh) * 2023-03-30 2025-10-28 戴蒙得创新股份有限公司 具有改善的碳化硅去除速率的金刚石系抛光组合物

Citations (3)

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TW200530377A (en) * 2003-10-01 2005-09-16 Asahi Kasei Chemicals Corp Metal-polishing composition
TW201111488A (en) * 2009-07-07 2011-04-01 Kao Corp Polishing liquid composition for silicon wafers
CN103254799A (zh) * 2013-05-29 2013-08-21 陈玉祥 一种亲水金刚石悬浮研磨抛光液及其制备方法

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TW200530377A (en) * 2003-10-01 2005-09-16 Asahi Kasei Chemicals Corp Metal-polishing composition
TW201111488A (en) * 2009-07-07 2011-04-01 Kao Corp Polishing liquid composition for silicon wafers
CN103254799A (zh) * 2013-05-29 2013-08-21 陈玉祥 一种亲水金刚石悬浮研磨抛光液及其制备方法

Also Published As

Publication number Publication date
ES2874899T3 (es) 2021-11-05
BR112016003781A2 (enExample) 2017-08-01
JP6491208B2 (ja) 2019-03-27
JP2016532757A (ja) 2016-10-20
MY179920A (en) 2020-11-19
SG11201601038WA (en) 2016-03-30
US9388328B2 (en) 2016-07-12
CA2920837A1 (en) 2015-02-26
WO2015026477A1 (en) 2015-02-26
CN105579548A (zh) 2016-05-11
CA2920837C (en) 2021-07-27
EP3036299B1 (en) 2021-04-21
KR20160047504A (ko) 2016-05-02
DK3036299T3 (da) 2021-06-28
EP3653683A1 (en) 2020-05-20
TW201510201A (zh) 2015-03-16
US20150052822A1 (en) 2015-02-26
EP3036299A1 (en) 2016-06-29
KR102262967B1 (ko) 2021-06-08
BR112016003781B1 (pt) 2022-05-17

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