SG11201601038WA - Lapping slurry having a cationic surfactant - Google Patents
Lapping slurry having a cationic surfactantInfo
- Publication number
- SG11201601038WA SG11201601038WA SG11201601038WA SG11201601038WA SG11201601038WA SG 11201601038W A SG11201601038W A SG 11201601038WA SG 11201601038W A SG11201601038W A SG 11201601038WA SG 11201601038W A SG11201601038W A SG 11201601038WA SG 11201601038W A SG11201601038W A SG 11201601038WA
- Authority
- SG
- Singapore
- Prior art keywords
- cationic surfactant
- lapping slurry
- lapping
- slurry
- cationic
- Prior art date
Links
Classifications
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09G—POLISHING COMPOSITIONS; SKI WAXES
- C09G1/00—Polishing compositions
- C09G1/02—Polishing compositions containing abrasives or grinding agents
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1436—Composite particles, e.g. coated particles
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1463—Aqueous liquid suspensions
-
- C—CHEMISTRY; METALLURGY
- C09—DYES; PAINTS; POLISHES; NATURAL RESINS; ADHESIVES; COMPOSITIONS NOT OTHERWISE PROVIDED FOR; APPLICATIONS OF MATERIALS NOT OTHERWISE PROVIDED FOR
- C09K—MATERIALS FOR MISCELLANEOUS APPLICATIONS, NOT PROVIDED FOR ELSEWHERE
- C09K3/00—Materials not provided for elsewhere
- C09K3/14—Anti-slip materials; Abrasives
- C09K3/1454—Abrasive powders, suspensions and pastes for polishing
- C09K3/1472—Non-aqueous liquid suspensions
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/304—Mechanical treatment, e.g. grinding, polishing, cutting
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer
- H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having at least one potential-jump barrier or surface barrier, e.g. PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic System or AIIIBV compounds with or without impurities, e.g. doping materials
- H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
- H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
- H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
- H01L21/30625—With simultaneous mechanical treatment, e.g. mechanico-chemical polishing
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US13/974,588 US9388328B2 (en) | 2013-08-23 | 2013-08-23 | Lapping slurry having a cationic surfactant |
| PCT/US2014/047980 WO2015026477A1 (en) | 2013-08-23 | 2014-07-24 | Lapping slurry having a cationic surfactant |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| SG11201601038WA true SG11201601038WA (en) | 2016-03-30 |
Family
ID=51352791
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| SG11201601038WA SG11201601038WA (en) | 2013-08-23 | 2014-07-24 | Lapping slurry having a cationic surfactant |
Country Status (13)
| Country | Link |
|---|---|
| US (1) | US9388328B2 (en) |
| EP (2) | EP3036299B1 (en) |
| JP (1) | JP6491208B2 (en) |
| KR (1) | KR102262967B1 (en) |
| CN (1) | CN105579548A (en) |
| BR (1) | BR112016003781B1 (en) |
| CA (1) | CA2920837C (en) |
| DK (1) | DK3036299T3 (en) |
| ES (1) | ES2874899T3 (en) |
| MY (1) | MY179920A (en) |
| SG (1) | SG11201601038WA (en) |
| TW (1) | TWI662115B (en) |
| WO (1) | WO2015026477A1 (en) |
Families Citing this family (6)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US9633831B2 (en) * | 2013-08-26 | 2017-04-25 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Chemical mechanical polishing composition for polishing a sapphire surface and methods of using same |
| CN106147617A (en) * | 2015-04-28 | 2016-11-23 | 天津诺邦科技有限公司 | A kind of water base polishing fluid of polycrystalline diamond and preparation method thereof |
| EP3456624B1 (en) | 2017-09-14 | 2020-01-01 | AIRBUS HELICOPTERS DEUTSCHLAND GmbH | A composite sandwich panel with a sandwich area |
| TWI640434B (en) * | 2017-12-14 | 2018-11-11 | 明志科技大學 | Composite separator and preparation method thereof |
| CN108892509A (en) * | 2018-08-03 | 2018-11-27 | 宁波哈泰雷碳化物有限公司 | A kind of preparation method of the nanometer silicon carbide slurry for ceramic moulding by casting |
| CN114958302A (en) * | 2022-05-26 | 2022-08-30 | 珠海戴蒙斯科技有限公司 | Efficient grinding fluid and preparation method and application thereof |
Family Cites Families (29)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US4038048A (en) | 1975-02-14 | 1977-07-26 | Thrower Jr Herbert T | Lapping composition containing a carboxy vinyl polymer |
| US4468339B1 (en) * | 1982-01-21 | 1989-05-16 | Aqueous compositions containing overbased materials | |
| US4867757A (en) | 1988-09-09 | 1989-09-19 | Nalco Chemical Company | Lapping slurry compositions with improved lap rate |
| JP3247419B2 (en) * | 1991-04-10 | 2002-01-15 | 株式会社日立製作所 | Lap surface plate and lap liquid |
| US5456735A (en) | 1991-07-12 | 1995-10-10 | Norton Company | Method of abrading with boron suboxide (BxO) and the boron suboxide (BxO) articles and composition used |
| JP3576261B2 (en) * | 1995-03-29 | 2004-10-13 | 東京磁気印刷株式会社 | Free abrasive slurry with controlled dispersion / aggregation state, method for producing the same, and method for dispersing the same |
| US5855633A (en) | 1997-06-06 | 1999-01-05 | Lockheed Martin Energy Systems, Inc. | Lapping slurry |
| US6258140B1 (en) * | 1999-09-27 | 2001-07-10 | Fujimi America Inc. | Polishing composition |
| US6491843B1 (en) * | 1999-12-08 | 2002-12-10 | Eastman Kodak Company | Slurry for chemical mechanical polishing silicon dioxide |
| JP2003138248A (en) * | 2001-10-16 | 2003-05-14 | Ppt Research Inc | Cutting or polishing slurry composition and use thereof |
| US7018560B2 (en) * | 2003-08-05 | 2006-03-28 | Rohm And Haas Electronic Materials Cmp Holdings, Inc. | Composition for polishing semiconductor layers |
| JP3974127B2 (en) * | 2003-09-12 | 2007-09-12 | 株式会社東芝 | Manufacturing method of semiconductor device |
| JP2007012638A (en) * | 2003-10-01 | 2007-01-18 | Asahi Kasei Chemicals Corp | Polishing composition for metal |
| US7253111B2 (en) | 2004-04-21 | 2007-08-07 | Rohm And Haas Electronic Materials Cmp Holding, Inc. | Barrier polishing solution |
| US20060196849A1 (en) | 2005-03-04 | 2006-09-07 | Kevin Moeggenborg | Composition and method for polishing a sapphire surface |
| US20060289387A1 (en) | 2005-06-23 | 2006-12-28 | Lombardi John L | Non-aqueous lapping composition and method using same |
| KR20070012209A (en) * | 2005-07-21 | 2007-01-25 | 가부시키가이샤 후지미인코퍼레이티드 | Polishing composition and polishing method |
| US20080148649A1 (en) * | 2006-12-21 | 2008-06-26 | Zhendong Liu | Ruthenium-barrier polishing slurry |
| JP2008270584A (en) * | 2007-04-23 | 2008-11-06 | Nippon Chem Ind Co Ltd | Polishing composition for semiconductor wafer and polishing processing method |
| JP5646996B2 (en) * | 2007-09-21 | 2014-12-24 | キャボット マイクロエレクトロニクス コーポレイション | Polishing composition and method of using abrasive particles treated with aminosilane |
| JP2009158810A (en) * | 2007-12-27 | 2009-07-16 | Toshiba Corp | Slurry for chemical-mechanical polishing and manufacturing method of semiconductor device |
| JP2010028086A (en) * | 2008-06-16 | 2010-02-04 | Hitachi Chem Co Ltd | Cmp abrasive, and polishing method using the same |
| JP2011171689A (en) * | 2009-07-07 | 2011-09-01 | Kao Corp | Polishing liquid composition for silicon wafer |
| JP2011040427A (en) * | 2009-08-06 | 2011-02-24 | Yamaguchi Seiken Kogyo Kk | Abrasive composition |
| JP5452175B2 (en) | 2009-11-04 | 2014-03-26 | 昭和電工株式会社 | Lapping method |
| JP2011171446A (en) * | 2010-02-17 | 2011-09-01 | Hitachi Chem Co Ltd | Polishing liquid for cmp and polishing method using the same |
| CN101974296A (en) * | 2010-11-12 | 2011-02-16 | 大连三达奥克化学股份有限公司 | Core/shell type composite nano abrasive silicon slice polishing liquid |
| JP5705813B2 (en) * | 2011-12-02 | 2015-04-22 | 古河電気工業株式会社 | Diamond abrasive manufacturing method, wire tool manufacturing method, and wire tool |
| CN103254799A (en) * | 2013-05-29 | 2013-08-21 | 陈玉祥 | Hydrophilic diamond-suspended grinding and polishing solution and preparation method thereof |
-
2013
- 2013-08-23 US US13/974,588 patent/US9388328B2/en active Active
-
2014
- 2014-07-24 JP JP2016536097A patent/JP6491208B2/en active Active
- 2014-07-24 EP EP14750870.9A patent/EP3036299B1/en active Active
- 2014-07-24 KR KR1020167007365A patent/KR102262967B1/en active IP Right Grant
- 2014-07-24 MY MYPI2016000325A patent/MY179920A/en unknown
- 2014-07-24 DK DK14750870.9T patent/DK3036299T3/en active
- 2014-07-24 CN CN201480046820.2A patent/CN105579548A/en active Pending
- 2014-07-24 ES ES14750870T patent/ES2874899T3/en active Active
- 2014-07-24 CA CA2920837A patent/CA2920837C/en active Active
- 2014-07-24 EP EP19208934.0A patent/EP3653683A1/en not_active Withdrawn
- 2014-07-24 SG SG11201601038WA patent/SG11201601038WA/en unknown
- 2014-07-24 WO PCT/US2014/047980 patent/WO2015026477A1/en active Application Filing
- 2014-07-24 BR BR112016003781-2A patent/BR112016003781B1/en active IP Right Grant
- 2014-08-05 TW TW103126727A patent/TWI662115B/en active
Also Published As
| Publication number | Publication date |
|---|---|
| EP3036299A1 (en) | 2016-06-29 |
| MY179920A (en) | 2020-11-19 |
| KR20160047504A (en) | 2016-05-02 |
| JP2016532757A (en) | 2016-10-20 |
| US20150052822A1 (en) | 2015-02-26 |
| CA2920837C (en) | 2021-07-27 |
| JP6491208B2 (en) | 2019-03-27 |
| CN105579548A (en) | 2016-05-11 |
| WO2015026477A1 (en) | 2015-02-26 |
| TW201510201A (en) | 2015-03-16 |
| DK3036299T3 (en) | 2021-06-28 |
| BR112016003781A2 (en) | 2017-08-01 |
| TWI662115B (en) | 2019-06-11 |
| EP3653683A1 (en) | 2020-05-20 |
| CA2920837A1 (en) | 2015-02-26 |
| ES2874899T3 (en) | 2021-11-05 |
| EP3036299B1 (en) | 2021-04-21 |
| KR102262967B1 (en) | 2021-06-08 |
| US9388328B2 (en) | 2016-07-12 |
| BR112016003781B1 (en) | 2022-05-17 |
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