TWI653720B - 半導體元件及其製造方法 - Google Patents

半導體元件及其製造方法 Download PDF

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Publication number
TWI653720B
TWI653720B TW107107334A TW107107334A TWI653720B TW I653720 B TWI653720 B TW I653720B TW 107107334 A TW107107334 A TW 107107334A TW 107107334 A TW107107334 A TW 107107334A TW I653720 B TWI653720 B TW I653720B
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Taiwan
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die
substrate
die stack
integrated circuit
dummy
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TW107107334A
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TW201913920A (zh
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林宗澍
陳琮瑜
文興 洪
李虹錤
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台灣積體電路製造股份有限公司
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Publication of TW201913920A publication Critical patent/TW201913920A/zh

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Abstract

在一實施例中，一種元件包括：晶粒堆疊，位於中介層之上且電性連接至中介層，晶粒堆疊包括最頂部積體電路晶粒。最頂部積體電路晶粒包括基底，其具有前側及與前側相對的後側，基底的前側包括主動表面；虛擬基底穿孔（TSV）自基底的後側至少局部地延伸至基底中，虛擬基底穿孔與主動表面電性隔離；熱介面材料，位於最頂部積體電路晶粒之上；以及虛擬連接件，位於熱介面材料中，熱介面材料環繞虛擬連接件，虛擬連接件與最頂部積體電路晶粒的主動表面電性隔離。

Description

散熱元件及方法
本發明實施例是有關於一種具有散熱元件的半導體元件及其製造方法。
在積體電路的封裝體中，多個半導體晶粒可藉由接合被堆疊起來，且可接合至其他封裝體組件，例如中介層(interposer)及封裝基底等。所得封裝體被稱為三維積體電路(Three-Dimensional Integrated Circuit，3DIC)。在三維積體電路中，熱能耗散是一項挑戰。
對於如何有效地耗散三維積體電路的內晶粒中所產生的熱能可能存在瓶頸。在典型的三維積體電路中，在熱能傳導至散熱器之前，內晶粒中所產生的熱能勢必被耗散至外部組件。然而，在堆疊晶粒與外部組件之間，具有不能有效地傳導熱能的其他材料，例如底部填充劑(underfill)、模塑化合物等。因此，熱能可能會陷於底部堆疊晶粒的內部區域中，而導致過高的局部溫度峰值(有時被稱為熱點(hot spot))。此外，因由高功率消耗晶粒產 生的熱能所導致的熱點可對周圍晶粒造成熱串擾(thermal crosstalk)問題，進而負面地影響周圍晶粒的效能及整個三維積體電路封裝體的可靠性。
本發明實施例提供一種半導體元件包括：晶粒堆疊，位於中介層之上且電性連接至中介層，晶粒堆疊包括最頂部積體電路晶粒。最頂部積體電路晶粒包括基底，其具有前側及與前側相對的後側，基底的前側包括主動表面；虛擬基底穿孔(TSV)自基底的後側至少局部地延伸至基底中，虛擬基底穿孔與主動表面電性隔離；熱介面材料，位於最頂部積體電路晶粒之上；以及虛擬連接件，位於熱介面材料中，熱介面材料環繞虛擬連接件，虛擬連接件與最頂部積體電路晶粒的主動表面電性隔離。
本發明實施例提供一種半導體元件的製造方法，其步驟如下。將晶粒堆疊貼合至中介層；以包封體來包封所述晶粒堆疊；將所述包封體平坦化，所述包封體的頂表面與所述晶粒堆疊的頂表面是齊平的；在所述晶粒堆疊的最頂部積體電路晶粒中形成凹槽，所述最頂部積體電路晶粒包括具有主動表面及後表面的基底，所述基底具有第一高度，所述凹槽自所述基底的所述後表面延伸第一深度，所述第一深度小於所述第一高度；以第一導電材料填充所述凹槽，以形成虛擬基底穿孔(TSV)；在所述虛擬基底穿孔上形成虛擬連接件；將熱介面材料點膠在所述最頂部積體電 路晶粒上，所述熱介面材料環繞所述虛擬連接件；以及將散熱器貼合至所述最頂部積體電路晶粒，所述散熱器覆蓋並環繞所述晶粒堆疊及所述中介層。
本發明實施例提供一種半導體元件的製造方法，其步驟如下。將晶粒堆疊貼合至中介層；以包封體來包封所述晶粒堆疊；將所述包封體平坦化，所述包封體的頂表面與所述晶粒堆疊的頂表面是齊平的；將熱介面材料點膠在所述晶粒堆疊上；在所述熱介面材料中形成虛擬連接件，非導電材料環繞所述虛擬連接件的所有側面上；以及將散熱器貼合至所述晶粒堆疊，所述散熱器覆蓋並環繞所述晶粒堆疊及所述中介層。
50‧‧‧積體電路晶粒
50A‧‧‧第一積體電路晶粒
50B‧‧‧第二積體電路晶粒
52‧‧‧基底
54‧‧‧元件
56‧‧‧導電插塞
58‧‧‧層間電介質
60‧‧‧內連線
62‧‧‧晶粒連接件
64‧‧‧介電材料
66、72‧‧‧通孔
70A、70B‧‧‧晶粒堆疊
100‧‧‧第一元件封裝體
100A、100B‧‧‧元件區
102‧‧‧晶圓
104‧‧‧晶粒連接件
106、206‧‧‧底部填充劑
108‧‧‧包封體
110‧‧‧導電連接件
112‧‧‧膠帶
114‧‧‧凹槽
116‧‧‧虛擬基底穿孔
118‧‧‧虛擬連接件
120‧‧‧中介層
122、210‧‧‧黏合劑
124‧‧‧虛擬金屬化層
126‧‧‧金屬間化合物(共晶化合物)
128‧‧‧開口
200‧‧‧第二元件封裝體
202‧‧‧封裝基底
204‧‧‧接合墊
208‧‧‧散熱器
212、304‧‧‧熱介面材料
300‧‧‧半導體元件
302‧‧‧散熱片
400‧‧‧方法
402、404、406、408、410、412‧‧‧步驟
P1‧‧‧熱路徑
結合附圖閱讀以下詳細說明，會最佳地理解本發明的各態樣。應注意，根據本行業中的標準慣例，各種特徵並非按比例繪製。事實上，為使論述清晰起見，可任意增大或減小各種特徵的尺寸。
圖1是根據一些實施例的積體電路晶粒的剖視圖。
圖2A及圖2B是根據一些實施例的晶粒堆疊的剖視圖。
圖3、圖4、圖5、圖6、圖7、圖8A、圖8B、圖9、圖10、圖11、圖12、圖13、圖14以及圖15是根據一些實施例以形成半導體元件的製程期間的中間步驟的各種視圖。
圖16示出根據一些其他實施例的半導體元件。
圖17示出根據一些其他實施例的半導體元件。
圖18示出根據一些其他實施例的半導體元件。
圖19示出根據一些其他實施例的半導體元件。
圖20示出根據一些其他實施例的半導體元件。
圖21示出根據一些其他實施例的虛擬連接件。
圖22示出根據一些其他實施例用於製造半導體元件的方法的流程圖。
以下揭露內容提供用於實施所提供的目標的不同特徵的許多不同實施例或實例。以下所描述的構件及配置的具體實例是為了以簡化的方式傳達本揭露為目的。當然，這些僅僅為實例而非用以限制。舉例來說，在以下描述中，在第二特徵上方或在第二特徵上形成第一特徵可包括第一特徵與第二特徵形成為直接接觸的實施例，且也可包括第一特徵與第二特徵之間可形成有額外特徵，使得第一特徵與第二特徵可不直接接觸的實施例。此外，本揭露在各種實例中可重複使用元件符號及/或字母。元件符號的重複使用是為了簡單及清楚起見，且並不表示所欲討論的各個實施例及/或配置本身之間的關係。
此外，為易於說明，本文中可能使用例如「在...下方(beneath)」、「在...下面(below)」、「下部的(lower)」、「上方(above)」、「上部的(upper)」等空間相對術語來闡述圖中所示的 一個元件或特徵與另一(些)元件或特徵的關係。所述空間相對術語意欲涵蓋元件在使用或操作時的不同定向。設備可被另外定向(旋轉90度或在其他定向)，而本文所用的空間相對術語相應地作出解釋。
根據一些實施例，在中介層上形成晶粒堆疊，且選擇性地在晶粒堆疊中形成虛擬通孔。在晶粒堆疊之上形成熱介面材料，且在熱介面材料中形成虛擬連接件。利用熱介面材料將散熱器貼合至晶粒堆疊。形成虛擬通孔及/或虛擬連接件可降低沿中介層與散熱器之間的熱路徑的熱阻，進而降低所得元件的操作溫度。
圖1是根據一些實施例的積體電路晶粒50的剖視圖。積體電路晶粒50可為中介層、邏輯元件等。積體電路晶粒50包括基底52、元件54、導電插塞56、層間電介質(inter-layer dielectric，ILD)58、內連線60、晶粒連接件62以及介電材料64。積體電路晶粒50可形成於可包括不同元件區的晶圓(圖中未示出)中，所述不同元件區在後續步驟中被單體化以形成多個積體電路晶粒50。
基底52具有：前表面(例如，在圖1中面向上的表面)，有時被稱為主動側；以及後表面(例如，在圖1中面向下的表面)，有時被稱為非主動側。基底52可為半導體(例如經摻雜的矽或未經摻雜的矽)，或為絕緣體上半導體(semiconductor-on-insulator，SOI)基底的主動層。基底52可包括其他半導體材料，例如：鍺；化合物半導體，包括碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦 以及/或銻化銦；合金半導體，包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP以及/或GaInAsP；或其組合。亦可使用其他基底，例如多層式或漸變式基底。
元件54可形成於基底52的前表面中及/或前表面上。元件54可為電晶體、二極體、電容器、電阻器等。在積體電路晶粒50為邏輯晶粒的實施例中，元件54包括主動元件。在積體電路晶粒50為中介層的實施例中，元件54可為被動元件或可被省略，使得積體電路晶粒50不包括主動元件。導電插塞56電性地並物理性地耦合至元件54。層間電介質58環繞元件54及導電插塞56，且包括一或多個介電層。
內連線60對元件54進行內連，以形成積體電路。內連線60可例如是金屬化圖案，其形成在基底52的前表面上的介電層中。所述金屬化圖案包括形成於一個或多個介電層中的金屬線及通孔。內連線60的金屬化圖案藉由導電插塞56電性耦合至元件54。
晶粒連接件62可為導電柱(例如，包括如銅、鋁、鎢、鎳或其合金的金屬)，並且機械地及電性地耦合至內連線60。晶粒連接件62可例如藉由鍍覆等方法來形成。晶粒連接件62對積體電路晶粒50的相應的積體電路進行電性耦合。
介電材料64位於積體電路晶粒50的主動表面上，例如位於內連線60上。介電材料64橫向包封晶粒連接件62，且介電材料64橫向相鄰(coterminous)積體電路晶粒50。介電材料64 是含矽介電層，且可由氧化矽、SiON、SiN等形成，並且可藉由沈積製程(例如化學氣相沈積(Chemical Vapor Deposition，CVD)、電漿增強化學氣相沈積(Plasma Enhanced Chemical Vapor Deposition，PECVD)、物理氣相沈積(Physical Vapor Deposition，PVD)、原子層沈積(Atom Layer Deposition，ALD)等)來形成。介電材料64可以是內連線60的最頂層。
圖2A及圖2B是根據一些實施例的晶粒堆疊70A及70B的剖視圖。晶粒堆疊70A及70B可各自具有單個功能(例如，邏輯元件、記憶體晶粒等)，或者可具有多個功能(例如，系統晶片(system-on-chip，SoC))。在特定實施例中，晶粒堆疊70A是處理器，且晶粒堆疊70B是記憶體模組。作為另一選擇，晶粒堆疊70A及70B在本文可被稱為晶粒堆疊70，其中所提及的晶粒堆疊70是指晶粒堆疊70A或晶粒堆疊70B。
如圖2A中所示，晶粒堆疊70A包括兩個被接合的積體電路晶粒50。晶粒堆疊70A可為處理器，例如中央處理單元(central processing unit，CPU)、圖形處理單元(graphics processing unit，GPU)、特殊應用積體電路(application-specific integrated circuit，ASIC)等。在具體實施例中，晶粒堆疊70A是圖形處理單元。在一些實施例中，第一積體電路晶粒50A與第二積體電路晶粒50B被接合成使得主動表面彼此面對(「面對面」)。第一積體電路晶粒50A與第二積體電路晶粒50B可藉由混合鍵結(hybrid bonding)、熔融鍵結(fusion bonding)、直接鍵結(direct bonding)、 介電鍵結(dielectric bonding)、金屬鍵結(metal bonding)等方式來連接。在一些實施例中，第一積體電路晶粒50A是處理器晶粒，且第二積體電路晶粒50B是介面晶粒。介面晶粒將處理器晶粒橋接至記憶體晶粒，且在處理器晶粒與記憶體晶粒之間轉譯指令。
在第一積體電路晶粒50A與第二積體電路晶粒50B是藉由混合鍵結而接合的實施例中，利用氧化物層(例如每一晶粒中的介電材料64)來形成共價鍵。在執行接合之前，可對第一積體電路晶粒50A及/或第二積體電路晶粒50B執行表面處理，進而在介電材料64的頂部中形成OH鍵。接下來，可執行預接合製程，以將第一積體電路晶粒50A與第二積體電路晶粒50B的晶粒連接件62及介電材料64對準並壓靠於一起以形成弱鍵。在預接合製程之後，將第一積體電路晶粒50A及第二積體電路晶粒50B退火，以強化所述弱鍵。在退火期間，介電材料64的頂部中的OH鍵斷裂而在第一積體電路晶粒50A與第二積體電路晶粒50B之間形成Si-O-Si鍵，進而強化所述鍵。在混合鍵結期間，在晶粒連接件62之間亦會發生金屬鍵結。
通孔66可穿過積體電路晶粒50中的一者來形成，以便形成外部連接。通孔66可為矽穿孔(through silicon via，TSV)。在所示實施例中，通孔66形成於第二積體電路晶粒50B(例如，介面晶粒)中。通孔66延伸穿過相應積體電路晶粒50的基底52，且可延伸穿過層間電介質58，以物理性地及電性地連接至內連線60的金屬化圖案。
如圖2B中所示，晶粒堆疊70B包括藉由通孔72連接的多個積體電路晶粒50。通孔72可例如為矽穿孔。晶粒堆疊70B可為記憶體元件，例如動態隨機存取記憶體(dynamic random access memory，DRAM)晶粒、靜態隨機存取記憶體(static random access memory，SRAM)晶粒、混合記憶體立方體(hybrid memory cube，HMC)模組、高頻寬記憶體(high bandwidth memory，HBM)模組等。在具體實施例中，晶粒堆疊70B是高頻寬記憶體模組。
晶粒堆疊(例如晶粒堆疊70)可陷獲熱能，進而在隨後所形成的元件封裝體中變為熱點。具體而言，包括處理元件的晶粒堆疊(例如晶粒堆疊70A)可具有高功率密度。舉例而言，在晶粒堆疊70A是圖形處理單元的實施例中，所得元件封裝體的功率密度可為約50瓦/平方公分(W/cm2)至約300瓦/平方公分。在操作期間，熱能可能被陷獲於處理器晶粒與介面晶粒的介面處。
圖3至圖13是根據一些實施例以形成半導體元件300的製程期間的中間步驟的各種視圖。圖3至圖13是剖視圖。在圖3至圖9中，藉由將各種積體電路晶粒接合至晶圓102來形成第一元件封裝體100。在一實施例中，第一元件封裝體100是晶圓上晶片(chip-on-wafer，CoW)封裝體，但應瞭解，各實施例可應用於其他三維積體電路封裝體。圖12示出所得的第一元件封裝體100。在圖13至圖14中，藉由將第一元件封裝體100安裝至基底來形成第二元件封裝體200。在一實施例中，元件封裝體200是基底上晶圓上晶片(chip-on-wafer-on-substrate，CoWoS)封裝體， 但應瞭解，各實施例可應用於其他三維積體電路封裝體。圖15示出實作所得第二元件封裝體200的半導體元件300。
晶圓102中可形成有多個元件。具體而言，在晶圓102中可形成有中介層、積體電路元件等，晶圓102可包括多個元件區100A及100B(在後續步驟中被單體化以形成第一元件封裝體100)。
在一些實施例中，在晶圓102中形成有中介層。所述中介層具有將積體電路晶粒中的主動元件(圖中未示出)進行電性連接以形成功能電路的內連結構。在此實施例中，晶圓102包括具有前表面(例如，在圖3中面向上的表面)及後表面(例如，在圖3中面向下的表面)的半導體基底。內連結構形成在半導體基底的後表面上。穿孔形成在半導體基底中，其自內連結構延伸至半導體基底的前表面。金屬線及通孔藉由例如雙重鑲嵌製程(dual damascene process)形成在半導體基底上的內連結構中。金屬線及通孔可電性連接至穿孔。中介層可(或不可)不包括例如電晶體及二極體等主動元件，且可(或不可)不包括例如電阻器、電感器、電容器等元件。
雖然本文中所說明的實施例是以其中形成有中介層的晶圓102為背景而進行論述，然而應瞭解，可在晶圓102中形成其他類型的元件。舉例而言，可在晶圓102中形成例如邏輯元件等積體電路元件。在此實施例中，晶圓102包括其中形成有主動及/或被動元件的半導體基底。半導體基底可為經摻雜或未經摻雜的 矽，或者為絕緣體上半導體(SOI)基底的主動層。半導體基底可包括其他半導體材料，例如：鍺；化合物半導體，包括碳化矽、砷化鎵、磷化鎵、磷化銦、砷化銦以及/或銻化銦；合金半導體，包括SiGe、GaAsP、AlInAs、AlGaAs、GaInAs、GaInP以及/或GaInAsP；或其組合。亦可使用其他基底，例如多層式或漸變式基底。例如電晶體、二極體、電容器、電阻器等元件可形成於半導體基底中及/或半導體基底上，且所述元件可藉由內連結構而內連，以形成積體電路。所述內連結構例如由半導體基底上的一個或多個介電層中的金屬化圖案所形成。
在圖3中，利用晶粒連接件104將晶粒堆疊70貼合至晶圓102。在一實施例中，可將一個晶粒堆疊70A(例如，圖形處理單元)及多個晶粒堆疊70B(例如，高頻寬記憶體)放置於晶圓102的每一元件區上。可例如使用取放工具(pick-and-place tool)將晶粒堆疊70貼合至晶圓102。晶粒連接件104可由導電材料(例如銲料、銅、鋁、金、鎳、銀、鈀、錫等、或其組合)形成。在一些實施例中，晶粒連接件104可藉由例如蒸鍍、電鍍、印刷、銲料轉移、植球等方法先形成一層銲料來形成。在結構上形成一層銲料之後，便可進行回銲，以將晶粒連接件104成形為所需凸塊形狀。晶粒連接件104在晶圓102上與晶粒堆疊70上對應的連接件之間形成接點，並將晶圓102電性連接至晶粒堆疊70。
在圖4中，可在晶粒堆疊70與晶圓102之間形成環繞晶粒連接件104的底部填充劑106。底部填充劑106可在晶粒堆疊 70被貼合之後藉由毛細管流動製程而形成，或者可在晶粒堆疊70被貼合之前藉由適合的沈積方法而形成。
在圖5中，在各種組件上形成包封體108。包封體108可為模塑化合物、環氧樹脂等，且可藉由壓縮模塑(compression molding)、轉移模塑(transfer molding)等來形成。包封體108可形成於晶圓102之上，以掩埋或覆蓋晶粒堆疊70。接著，固化包封體108。
在圖6中，在晶圓102的後側上形成導電連接件110。在形成導電連接件110之前，可將晶圓102的後側薄化。所述薄化可藉由化學機械拋光(chemical-mechanical polish，CMP)、研磨製程等來達成。導電連接件110電性連接至晶圓102的特徵(例如，邏輯元件、中介層等)，且可為球柵陣列(ball grid array，BGA)連接件、銲料球、金屬柱、受控塌陷晶片連接(controlled collapse chip connection，C4)凸塊、微凸塊、由無電鍍鎳鈀浸金技術(electroless nickel-electroless palladium-immersion gold technique，ENEPIG)所形成的凸塊等。在一些實施例中，導電連接件110藉由例如蒸鍍、電鍍、印刷、銲料轉移、植球等常用的方法先形成一層銲料來形成。在結構上形成一層銲料之後，便可進行回銲，以將材料成形為所需的凸塊形狀。在形成導電連接件110之後，可將晶圓102放置於膠帶112上，以進行後續處理步驟。
在圖7中，薄化包封體108，以暴露出晶粒堆疊70的頂表面。所述薄化可藉由化學機械拋光、研磨製程等來達成。在薄 化之後，包封體108的頂表面與晶粒堆疊70的頂表面是齊平的。
在圖8A及圖8B中，在晶粒堆疊70中形成凹槽114。圖8A是示出在晶圓102的階段上進行處理的剖視圖，且圖8B是示出在晶粒堆疊70A的階段上進行詳細處理的剖視圖。凹槽114是基底穿孔(through substrate via，TSV)開口，稍後將如下所述對其進行填充。凹槽114形成於晶粒堆疊70的最頂部晶粒的基底52中。凹槽114自基底52的後側延伸，且可被形成為完全延伸穿過基底52或僅局部地延伸至基底52中。在一實施例中，凹槽114僅局部地延伸至基底52中，使得凹槽114自基底52的後表面延伸至較基底52的總高度小的深度。因此，儘管凹槽114的深度取決於第一元件封裝體100的整體設計，然而在一些實施例中，所述深度可為基底52的頂表面下方約50微米(μm)至約700微米，例如約300微米的深度。此深度使得隨後所形成的基底穿孔能夠成為用於將晶粒堆疊70冷卻的良好熱能導體時，保持製造成本為低的。此外，儘管凹槽114的寬度取決於第一元件封裝體100的整體設計，然而在一些實施例中，所述寬度可為約10微米至約200微米。凹槽114可藉由可接受的微影及蝕刻技術來形成。舉例而言，可對晶圓102(例如，在包封體108及晶粒堆疊70上)施加適合的光阻，並將光阻顯影。接著，可在蝕刻製程中使用被顯影的光阻作為蝕刻罩幕來形成凹槽114。所述蝕刻製程可為非等向性濕式蝕刻或乾式蝕刻。
形成凹槽114之後，便可在凹槽114中填入襯層(圖中 未單獨示出)。所述襯層可為介電材料(例如氮化矽、氧化矽、介電聚合物、該些材料的組合等)，且可藉由例如化學氣相沈積、氧化、物理氣相沈積、原子層沈積等製程來形成。
在凹槽114中亦可填入障壁層(圖中亦未單獨示出)，使得所述障壁層形成在襯底之上。所述障壁層可為導電材料(例如氮化鈦等)，另外，亦可利用其他材料(例如氮化鉭、鈦、另一電介質等)。所述障壁層可使用化學氣相沈積製程(例如電漿增強化學氣相沈積)來形成，另外，亦可使用例如濺鍍、或金屬有機化學氣相沈積(metal organic chemical vapor deposition，MOCVD)、原子層沈積等其他製程。所述障壁層可被形成為覆形於凹槽114的底層形狀。
在圖9中，在凹槽114中形成導電材料，進而形成虛擬基底穿孔116。導電材料可為銅，另外，亦可利用例如鋁、鎢、合金、經摻雜多晶矽、其組合等其他適合的材料。所述導電材料可藉由在凹槽114中沈積晶種層且接著將銅電鍍至所述晶種層上、進而填充並過度填充凹槽114來形成。凹槽114被填充之後，便可藉由例如化學機械拋光等研磨製程來移除凹槽114以外的多餘障壁層及多餘導電材料，但可使用任意適合的移除製程。
在形成導電材料之後，可進行退火製程。舉例而言，可在約400℃的溫度下，進行熱退火達約1小時的時間跨度。所述退火可強化虛擬基底穿孔116與基底52的介面，且可穩定被電鍍的導電材料的晶粒結構。
虛擬基底穿孔116與周圍元件電性隔離。雖然虛擬基底穿孔116是形成於本身可含有元件54的積體電路晶粒50的基底52中，然而虛擬基底穿孔116與積體電路晶粒50的主動側(例如，與積體電路晶粒50的元件54)電性隔離。舉例而言，凹槽114可形成於積體電路晶粒50的基底52中，以使得虛擬基底穿孔116在除了頂側(例如，虛擬基底穿孔116的與基底52的後側齊平的側)之外的所有側上均被非導電材料環繞。非導電材料可為絕緣材料、塊狀半導體材料(例如，未形成有元件於其中的半導體材料)等。虛擬基底穿孔116不可物理性地或電性地連接至元件54、內連線60的金屬化層等。
雖然僅示出在晶粒堆疊70A中形成虛擬基底穿孔116，然而應瞭解，可在晶粒堆疊70中的任一者或全部中形成虛擬基底穿孔116。舉例而言，可僅在晶粒堆疊70A中、僅在晶粒堆疊70B中或者在晶粒堆疊70A及70B兩者中形成虛擬基底穿孔116。
在圖10中，在相應虛擬基底穿孔116上形成虛擬連接件118。可在相應虛擬基底穿孔116中的每一者上或者在虛擬基底穿孔116的一個子集(subset)上形成虛擬連接件118(例如，虛擬連接件118可僅形成在虛擬基底穿孔116的一個子集上，且可不形成在虛擬基底穿孔116中的其餘部分上)。由於虛擬連接件118形成於虛擬基底穿孔116上，因此虛擬連接件118亦與基底52的主動側電性隔離。虛擬連接件118可由導電材料(例如銲料、銅、鋁、金、鎳、銀、鈀、錫等、或其組合)形成。在所示實施例中， 虛擬連接件118是由可回銲材料(例如銲料、新型銲料(smart solder)等)所形成的凸塊。虛擬連接件118可被形成為僅覆蓋相應的虛擬基底穿孔116，或者可較虛擬基底穿孔116寬以使其覆蓋相應的虛擬基底穿孔116並沿最頂部積體電路晶粒50的基底52的頂表面延伸。虛擬連接件118將虛擬基底穿孔116熱耦合至上覆散熱器(以下示出)。虛擬連接件118大至足以可在操作期間自虛擬基底穿孔116轉移充足的熱能；在一實施例中，虛擬連接件118具有約25微米至約100微米的高度，例如約50微米的高度。
在圖11中，藉由單體化製程將晶圓102及包封體108單體化，進而形成第一元件封裝體100。作為單體化製程的結果，晶圓102被單體化成多個中介層120，其中第一元件封裝體100中的每一者具有一個中介層120。單體化可在晶圓102位於膠帶112上時執行。單體化是沿例如介於相鄰的元件區(例如，元件區100A及100B)之間的切割道區來執行。在一些實施例中，單體化製程包括鋸切製程、雷射製程或其組合。
圖12示出在單體化之後所得的第一元件封裝體100。作為單體化製程的結果，中介層120的邊緣與包封體108的邊緣是共邊界的。換言之，中介層120的外側壁與包封體108的外側壁具有相同的寬度。
在圖13中，藉由將第一元件封裝體100安裝至封裝基底202來形成第二元件封裝體200。封裝基底202可由例如矽、鍺、金剛石等半導體材料形成。另外，亦可使用例如矽鍺、碳化矽、 砷化鎵、砷化銦、磷化銦、碳化矽鍺、磷化鎵砷、磷化鎵銦、該些材料的組合等的化合物材料。另外，封裝基底202可為絕緣體上半導體基底。一般而言，絕緣體上半導體基底包括一層半導體材料，例如磊晶矽、鍺、矽鍺、絕緣體上矽(silicon-on-insulator，SOI)、絕緣體上矽鍺(silicon germanium-on-insulator，SGOI)或其組合。在一個替代性實施例中，封裝基底202是基於絕緣核心層(例如玻璃纖維強化樹脂核心層)。一種示例性核心層材料是玻璃纖維樹脂，例如FR4。另外，核心層材料包括雙馬來醯亞胺三嗪(bismaleimide-triazine，BT)樹脂，或作為另一選擇，包括其他印刷電路板(printed circuit board，PCB)材料或膜。增層膜(例如味之素增層膜(Ajinomoto Build-up Film，ABF)或其他積層)可用於封裝基底202。
封裝基底202可包括主動元件及被動元件(圖中未示出)。如此項技術中具有通常知識者將認識到，可使用各種各樣的元件(例如電晶體、電容器、電阻器、該些元件的組合等)來產生第二元件封裝體200的設計的結構性及功能性要求。可使用任意適合的方法來形成所述元件。
封裝基底202亦可包括金屬化層及通孔(圖中未示出)以及位於所述金屬化層及通孔之上的接合墊204。所述金屬化層可形成於主動元件及被動元件之上，且被設計成對各種元件進行連接以形成功能性電路系統。所述金屬化層可由交替的介電材料(例如，低介電常數介電材料)層及導電材料(例如，銅)層形成(其 中通孔對各導電材料層進行內連)，且可藉由任意適合的製程(例如沈積、鑲嵌、雙重鑲嵌等)來形成。在一些實施例中，封裝基底202實質上不含主動元件及被動元件。
在一些實施例中，對導電連接件110進行回銲，以將第一元件封裝體100貼合至接合墊204，進而將中介層120接合至封裝基底202。導電連接件110將封裝基底202(包括封裝基底202中的金屬化層)電性地及/或物理性地耦合至第一元件封裝體100。在一些實施例中，在將第一元件封裝體100安裝於封裝基底202上之前，可將被動元件(例如，表面安裝元件(surface mount device，SMD)，圖中未示出)貼合至封裝基底202(例如，接合至接合墊204)。在此類實施例中，所述被動元件可與導電連接件110接合至封裝基底202的同一表面。
導電連接件110可具有在其上形成的環氧樹脂助銲劑(圖中未示出)，在第一元件封裝體100貼合至封裝基底202之後，剩餘的環氧樹脂助銲劑中的環氧樹脂部分中的至少一些部分被回銲。此剩餘的環氧樹脂部分可充當底部填充劑，以降低應力並保護因對導電連接件110進行回銲所產生的接點。
可在第一元件封裝體100與封裝基底202之間形成環繞導電連接件110的底部填充劑206。底部填充劑206可在第一元件封裝體100被貼合之後藉由毛細管流動製程而形成，或者可在第一元件封裝體100被貼合之前藉由適合的沈積方法而形成。
在圖14中，將散熱器208貼合至第一元件封裝體100及 封裝基底202，進而覆蓋並環繞第一元件封裝體100。散熱器208可由具有高導熱率的材料(例如鋼、不銹鋼、銅等或其組合)形成。在一些實施例(以下論述)中，散熱器208塗佈有另一金屬(例如金、鎳等)。在一些實施例中，散熱器208是單一連續的材料。在一些實施例中，散熱器208包括可為相同材料或不同材料的多個片塊。
散熱器208黏附至第一元件封裝體100及封裝基底202。黏合劑210將散熱器208貼合至封裝基底202。黏合劑210可為環氧樹脂、膠等，且可為導熱材料。熱介面材料(thermal interface material，TIM)212將散熱器208貼合至第一元件封裝體100。熱介面材料212可為聚合物材料、銲料膏、銦銲料膏等，且可被點膠在第一元件封裝體100上，例如點膠在晶粒堆疊70、包封體108及虛擬連接件118上。顯著地，熱介面材料212環繞虛擬連接件118。熱介面材料212的厚度厚到足以將虛擬連接件118掩埋。舉例而言，在一實施例中，虛擬連接件118被形成為約50微米的高度，熱介面材料212被形成為約25微米至約200微米的厚度，例如約100微米的厚度。
熱介面材料212將第一元件封裝體100與散熱器208熱耦合。由於散熱器208是第一元件封裝體100的主要散熱構件，因此在操作期間沿著散熱器208與晶粒堆疊70的最底部晶粒之間延伸的熱路徑P1的整體熱阻而言，熱介面材料212的導熱率可能是熱瓶頸。由於虛擬連接件118被掩埋於熱介面材料212中，因 此沿熱路徑P1的熱阻可得以減小。在一實施例中，添加虛擬連接件118可將沿熱路徑P1的熱阻減小至十分之一或以下。此外，虛擬基底穿孔116亦可減小沿熱路徑P1的熱阻。
圖15示出實作所得第二元件封裝體200的半導體元件300。在半導體元件300中，利用熱介面材料304將散熱片302黏附至第二元件封裝體200。散熱片302可由選自用於形成散熱器208的候選材料中的材料形成。散熱片302可由與散熱器208相同的材料形成，或者可包括不同的材料。熱介面材料304可類似於熱介面材料212，或者可為不同的。半導體元件300可在用於製造第二元件封裝體200的製程之後以不同的製程來形成。舉例而言，可在第一製程中製造第二元件封裝體200，且可在製造並交付第二元件封裝體200之後在第二製程中形成半導體元件300。
圖16示出根據一些其他實施例的半導體元件300。在所示實施例中，未形成虛擬基底穿孔116使得晶粒堆疊70實質上不含基底穿孔。在此實施例中，虛擬連接件118在所有側上均被非導電材料環繞。雖然虛擬基底穿孔116可減小沿熱路徑P1的熱阻，然而虛擬基底穿孔116的製造成本昂貴。在熱介面材料212中形成虛擬連接件118可充分減小沿熱路徑P1的熱阻，進而藉由避免形成基底穿孔，以降低製造成本。
圖17示出根據一些其他實施例的半導體元件300。在所示實施例中，虛擬連接件118是由導電材料(例如銅、鋁、鎢、合金、經摻雜多晶矽等或其組合)形成的短柱(stud)、柱或凸塊。 在特定實施例中，虛擬連接件118是虛擬銅柱。形成掩埋於熱介面材料212中的銅柱可減小沿熱路徑P1的熱阻。
虛擬銅柱可藉由可接受的微影及鍍覆製程來形成。舉例而言，在凹槽114(例如，參見圖9)中形成虛擬基底穿孔116之後，可對晶圓102(例如，在包封體108及晶粒堆疊70上)施加適合的光阻(圖中未示出)並將光阻顯影。光阻可被圖案化成具有暴露出虛擬基底穿孔116的開口。光阻中的開口可以障壁層來襯砌。所述障壁層可為例如氮化鈦等導電材料、氮化鉭、鈦、另一電介質等，且可藉由化學氣相沈積、電漿增強化學氣相沈積、金屬有機化學氣相沈積、原子層沈積等來形成。接著，可在開口中形成導電材料，進而形成虛擬連接件118(例如，虛擬銅柱)。可藉由在開口中沈積晶種層且接著將導電材料電鍍至晶種層上、進而填充開口來形成導電材料。接著，可藉由灰化(ashing)、剝除(stripping)等來移除光阻。
圖18示出根據一些其他實施例的半導體元件300。在所示實施例中，在第一元件封裝體100上形成有黏合劑122。黏合劑122位於晶粒堆疊70、包封體108及虛擬基底穿孔116上。可在第一元件封裝體100被單體化之前或之後將黏合劑122點膠在第一元件封裝體100上。黏合劑122可為聚合物材料、銲料膏、熱黏合劑等，且可被形成為約25微米至約150微米的厚度。虛擬連接件118形成於黏合劑122上，且可藉由取放方法來形成。在所示實施例中，虛擬連接件118是例如銲料球等凸塊。在一些實施 例中，虛擬連接件118未對準於虛擬基底穿孔116之上。將熱介面材料212點膠在黏合劑122上及虛擬連接件118周圍。虛擬連接件118被掩埋於熱介面材料212中。黏合劑122可使虛擬連接件118適形於第一元件封裝體100的形狀，包括適形於可能已在第一元件封裝體100中引入的任何翹曲。因此，沿熱路徑P1的整體熱阻可得以減小。
圖19示出根據一些其他實施例的半導體元件300。在所示實施例中，在第一元件封裝體100上形成有虛擬金屬化層124。虛擬金屬化層124可在第一元件封裝體100被單體化之前或之後形成於第一元件封裝體100上。虛擬金屬化層124可由導電材料或金屬(例如金、銦、銅等、或其組合)形成。虛擬金屬化層124可藉由在晶圓102之上(例如，在包封體108、晶粒堆疊70及虛擬基底穿孔116上)沈積晶種層，且接著將導電材料電鍍至晶種層上來形成。虛擬金屬化層124亦可藉由將導電材料濺鍍至晶圓102上來形成。如虛擬基底穿孔116一樣，虛擬金屬化層124可與晶粒堆疊70的主動及/或被動元件(例如，元件54)以及其他周圍元件電性隔離。
虛擬連接件118形成於虛擬金屬化層124上，且可藉由取放方法來形成。在所示實施例中，虛擬連接件118是例如銲料球等凸塊。將熱介面材料212點膠在虛擬金屬化層124上以及虛擬連接件118周圍。虛擬連接件118未被掩埋於熱介面材料212中。而是，在形成之後，虛擬連接件118具有與熱介面材料212 齊平或延伸至熱介面材料212上方的頂表面。當將散熱器208貼合至第一元件封裝體100時，對虛擬連接件118進行回銲以將虛擬金屬化層124接合至散熱器208。由此，銲料接點形成在熱介面材料212中，以接合虛擬金屬化層124與散熱器208。在所示實施例中，散熱器208塗佈有另一金屬，例如鎳。在回銲期間，散熱器208的鎳塗層與熱介面材料212及虛擬連接件118的材料混合，以在散熱器208與熱介面材料212的介面處形成金屬間化合物(intermetallic compound，IMC)126。金屬間化合物126可具有不同區。舉例而言，金屬間化合物126可具有第一區與第二區。所述第一區具有第一金屬間化合物，其是由虛擬連接件118及散熱器208的材料所形成，所述第二區具有第二金屬間化合物，其是由熱介面材料212及散熱器208的材料所形成。虛擬金屬化層124及金屬間化合物126可具有高導熱率，且可適形於第一元件封裝體100的形狀，包括適形於可能已在第一元件封裝體100中引入的任何翹曲。因此，沿熱路徑P1的整體熱阻可得以減小。
圖20示出根據一些其他實施例的半導體元件300。在所示實施例中，虛擬連接件118是經圖案化的金屬片的一部分(例如，參見圖21，其示出經圖案化的金屬片的俯視圖)。舉例而言，經圖案化的金屬片可為銅箔(例如用於射頻干擾(radio frequency interference，RFI)屏蔽的銅箔)，且可包括開口128。經圖案化的金屬片可具有約11微米至約25微米的厚度。經圖案化的金屬片設置於熱介面材料212中，使得熱介面材料212設置於經圖案化 的金屬片與第一元件封裝體100之間且亦設置於經圖案化的金屬片與散熱器208之間。經圖案化的金屬片可具有高導熱率，且可適形於第一元件封裝體100的形狀，包括適形於可能已在第一元件封裝體100中引入的任何翹曲。因此，沿熱路徑P1的整體熱阻可得以減小。
圖22示出根據一些其他實施例用於製造半導體元件300的方法400的流程圖。在步驟402中，將晶粒堆疊(例如晶粒堆疊70A)貼合至中介層120。在步驟404中，包封晶粒堆疊70A。在步驟406中，選擇性地在晶粒堆疊中形成虛擬基底穿孔116。在步驟408中，在晶粒堆疊上形成虛擬連接件118。可根據本文中的任何實施例來形成虛擬連接件118。在步驟410中，將熱介面材料212點膠在虛擬連接件118周圍。在步驟412中，使用熱介面材料212將散熱器208貼合至晶粒堆疊。在後續處理步驟中，可將散熱片302貼合至散熱器208。
各實施例可達成多個優點。熱介面材料212的導熱率可能是堆疊元件中的重要的熱瓶頸。在熱介面材料212中形成虛擬連接件118以及在晶粒堆疊70中形成虛擬基底穿孔116可降低沿熱路徑P1的熱阻。添加例如黏合劑122、虛擬金屬化層124及共晶化合物126等其他特徵可幫助使熱介面材料212適形於可能在元件封裝體100中引入的任何翹曲。因此，沿熱路徑P1的整體熱阻可得以減小。
在一實施例中，一種元件包括：晶粒堆疊，位於中介層 之上且電性連接至所述中介層，所述晶粒堆疊包括最頂部積體電路晶粒，所述最頂部積體電路晶粒包括基底與虛擬基底穿孔(TSV)。所述基底具有前側及相對於所述前側的後側，所述基底的所述前側包括主動表面，所述虛擬基底穿孔自所述基底的所述後側至少局部地延伸至所述基底中，所述虛擬基底穿孔與所述主動表面電性隔離。所述元件包括熱介面材料，位於所述最頂部積體電路晶粒之上；以及虛擬連接件，位於所述熱介面材料中，所述熱介面材料環繞所述虛擬連接件，所述虛擬連接件與所述最頂部積體電路晶粒的所述主動表面電性隔離。
在一些實施例中，所述虛擬連接件是設置於所述虛擬基底穿孔上的銲料連接件。在一些實施例中，所述虛擬連接件是設置於所述虛擬基底穿孔上的銅柱。在一些實施例中，所述元件進一步包括：黏合劑，位於所述最頂部積體電路晶粒上，所述虛擬連接件及所述熱介面材料設置於所述黏合劑上。在一些實施例中，所述元件進一步包括：虛擬金屬化層，位於所述最頂部積體電路晶粒上，所述虛擬連接件及所述熱介面材料設置於所述虛擬金屬化層上，所述虛擬金屬化層與所述最頂部積體電路晶粒的所述主動表面電性隔離；以及共晶化合物，位於所述熱介面材料上，所述虛擬連接件將所述共晶化合物接合至所述虛擬金屬化層。在一些實施例中，所述虛擬連接件是經圖案化的金屬片。在一些實施例中，所述元件進一步包括：封裝基底，所述中介層接合至所述封裝基底；以及散熱器，黏附至所述封裝基底及所述晶粒堆疊， 所述散熱器覆蓋並環繞所述晶粒堆疊，所述熱介面材料將所述散熱器與所述晶粒堆疊熱耦合。在一些實施例中，所述晶粒堆疊進一步包括：介面晶粒，接合至所述中介層，所述最頂部積體電路晶粒接合至所述介面晶粒。
在一實施例中，一種方法包括：將晶粒堆疊貼合至中介層；以包封體來包封所述晶粒堆疊；將所述包封體平坦化，所述包封體的頂表面與所述晶粒堆疊的頂表面是齊平的；在所述晶粒堆疊的最頂部積體電路晶粒中形成凹槽，所述最頂部積體電路晶粒包括具有主動表面及後表面的基底，所述基底具有第一高度，所述凹槽自所述基底的所述後表面延伸第一深度，所述第一深度小於所述第一高度；以第一導電材料填充所述凹槽，以形成虛擬基底穿孔(TSV)；在所述虛擬基底穿孔上形成虛擬連接件；將熱介面材料點膠在所述最頂部積體電路晶粒上，所述熱介面材料環繞所述虛擬連接件；以及將散熱器貼合至所述最頂部積體電路晶粒，所述散熱器覆蓋並環繞所述晶粒堆疊及所述中介層。
在一些實施例中，所述方法進一步包括：在晶圓中形成所述中介層；以及將所述晶圓單體化以形成所述中介層，所述中介層上設置有所述晶粒堆疊。在一些實施例中，所述虛擬基底穿孔及所述虛擬連接件是在所述將所述晶圓單體化之前形成。在一些實施例中，所述在所述虛擬基底穿孔上形成所述虛擬連接件包括在所述虛擬基底穿孔上形成銲料連接件。在一些實施例中，所述在所述虛擬基底穿孔上形成所述虛擬連接件包括：在所述最頂 部積體電路晶粒上形成光阻；將所述光阻圖案化，以形成暴露出所述虛擬基底穿孔的開口；以及在所述開口中形成第二導電材料，以形成所述虛擬連接件。在一些實施例中，所述方法進一步包括：在所述最頂部積體電路晶粒上鍍覆虛擬金屬化層，將所述熱介面材料點膠於所述虛擬金屬化層上，所述虛擬金屬化層與所述最頂部積體電路晶粒的所述主動表面電性隔離。在一些實施例中，所述虛擬連接件包括銲料連接件，所述方法進一步包括：對所述銲料連接件進行回銲，以將所述虛擬金屬化層接合至所述散熱器。在一些實施例中，所述將所述晶粒堆疊貼合至所述中介層包括：利用導電連接件將所述晶粒堆疊接合至所述中介層；以及在所述晶粒堆疊與所述中介層之間形成底部填充劑，所述底部填充劑環繞所述導電連接件。
在一實施例中，一種方法包括：將晶粒堆疊貼合至中介層；以包封體來包封所述晶粒堆疊；將所述包封體平坦化，所述包封體的頂表面與所述晶粒堆疊的頂表面是齊平的；將熱介面材料點膠在所述晶粒堆疊上；在所述熱介面材料中形成虛擬連接件，非導電材料環繞所述虛擬連接件的所有側面上；以及將散熱器貼合至所述晶粒堆疊，所述散熱器覆蓋並環繞所述晶粒堆疊及所述中介層。
在一些實施例中，所述在所述熱介面材料中形成所述虛擬連接件包括：在所述晶粒堆疊上形成所述虛擬連接件。在一些實施例中，所述在所述熱介面材料中形成所述虛擬連接件包括： 在所述晶粒堆疊上形成虛擬金屬化層；以及在所述虛擬金屬化層上形成所述虛擬連接件。在一些實施例中，所述在所述熱介面材料中形成所述虛擬連接件包括：在所述熱介面材料中設置經圖案化的金屬片。
以上內容概述了若干實施例的特徵以使熟習此項技術者可更好地理解本發明的各態樣。熟習此項技術者應瞭解，他們可易於使用本發明作為基礎來設計或修改其他製程及結構以施行本文所介紹實施例的相同目的及/或達成本文所介紹實施例的相同優點。熟習此項技術者亦應認識到，此種等效構造並不背離本發明的精神及範圍，且在不背離本發明的精神及範圍的條件下，他們可對本文作出各種改變、替代、及變更。

Claims (10)

  1. 一種半導體元件，包括：晶粒堆疊，位於中介層之上且電性連接至所述中介層，所述晶粒堆疊包括最頂部積體電路晶粒，所述最頂部積體電路晶粒包括：基底，具有前側及相對於所述前側的後側，所述基底的所述前側包括主動表面；虛擬基底穿孔(TSV)，自所述基底的所述後側至少局部地延伸至所述基底中，所述虛擬基底穿孔與所述主動表面電性隔離；熱介面材料，位於所述最頂部積體電路晶粒之上；以及虛擬連接件，位於所述熱介面材料中，所述熱介面材料環繞所述虛擬連接件，所述虛擬連接件與所述最頂部積體電路晶粒的所述主動表面電性隔離。
  2. 如申請專利範圍第1項所述的半導體元件，更包括：黏合劑，位於所述最頂部積體電路晶粒上，所述虛擬連接件及所述熱介面材料設置於所述黏合劑上。
  3. 如申請專利範圍第1項所述的半導體元件，更包括：封裝基底，所述中介層接合至所述封裝基底；以及散熱器，黏附至所述封裝基底及所述晶粒堆疊，所述散熱器覆蓋並環繞所述晶粒堆疊，所述熱介面材料將所述散熱器與所述晶粒堆疊熱耦合。
  4. 一種半導體元件的製造方法，包括：將晶粒堆疊貼合至中介層；以包封體來包封所述晶粒堆疊；將所述包封體平坦化，所述包封體的頂表面與所述晶粒堆疊的頂表面是齊平的；在所述晶粒堆疊的最頂部積體電路晶粒中形成凹槽，所述最頂部積體電路晶粒包括具有主動表面及後表面的基底，所述基底具有第一高度，所述凹槽自所述基底的所述後表面延伸第一深度，所述第一深度小於所述第一高度；以第一導電材料填充所述凹槽，以形成虛擬基底穿孔(TSV)；在所述虛擬基底穿孔上形成虛擬連接件；將熱介面材料點膠在所述最頂部積體電路晶粒上，所述熱介面材料環繞所述虛擬連接件；以及將散熱器貼合至所述最頂部積體電路晶粒，所述散熱器覆蓋並環繞所述晶粒堆疊及所述中介層。
  5. 如申請專利範圍第4項所述的半導體元件的製造方法，更包括：在晶圓中形成所述中介層；以及將所述晶圓單體化以形成所述中介層，所述中介層上設置有所述晶粒堆疊。
  6. 如申請專利範圍第4項所述的半導體元件的製造方法，更包括：在所述最頂部積體電路晶粒上鍍覆虛擬金屬化層，將所述熱介面材料點膠於所述虛擬金屬化層上，所述虛擬金屬化層與所述最頂部積體電路晶粒的所述主動表面電性隔離。
  7. 如申請專利範圍第6項所述的半導體元件的製造方法，其中所述虛擬連接件包括銲料連接件，所述半導體元件的製造方法更包括：對所述銲料連接件進行回銲，以將所述虛擬金屬化層接合至所述散熱器。
  8. 如申請專利範圍第4項所述的半導體元件的製造方法，其中所述將所述晶粒堆疊貼合至所述中介層包括：利用導電連接件將所述晶粒堆疊接合至所述中介層；以及在所述晶粒堆疊與所述中介層之間形成底部填充劑，所述底部填充劑環繞所述導電連接件。
  9. 一種半導體元件的製造方法，包括：將晶粒堆疊貼合至中介層；以包封體來包封所述晶粒堆疊；將所述包封體平坦化，所述包封體的頂表面與所述晶粒堆疊的頂表面是齊平的；將熱介面材料與虛擬連接件形成在所述晶粒堆疊上，其中所述熱介面材料包括非導電材料，其環繞所述虛擬連接件的所有側面上；以及將散熱器貼合至所述晶粒堆疊，所述散熱器覆蓋並環繞所述晶粒堆疊及所述中介層。
  10. 如申請專利範圍第9項所述的半導體元件的製造方法，其中所述將所述熱介面材料與所述虛擬連接件形成在所述晶粒堆疊上包括：在所述晶粒堆疊上形成虛擬金屬化層；以及在所述虛擬金屬化層上形成所述虛擬連接件，或在所述熱介面材料中設置經圖案化的金屬片。
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