TWI641913B - 聚合物、有機層組成物與形成圖案之方法 - Google Patents

聚合物、有機層組成物與形成圖案之方法 Download PDF

Info

Publication number
TWI641913B
TWI641913B TW106112730A TW106112730A TWI641913B TW I641913 B TWI641913 B TW I641913B TW 106112730 A TW106112730 A TW 106112730A TW 106112730 A TW106112730 A TW 106112730A TW I641913 B TWI641913 B TW I641913B
Authority
TW
Taiwan
Prior art keywords
group
substituted
unsubstituted
chemical formula
polymer
Prior art date
Application number
TW106112730A
Other languages
English (en)
Chinese (zh)
Other versions
TW201816517A (zh
Inventor
金瑆煥
朴裕信
林栽範
金昇炫
鄭鉉日
Original Assignee
三星Sdi股份有限公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 三星Sdi股份有限公司 filed Critical 三星Sdi股份有限公司
Publication of TW201816517A publication Critical patent/TW201816517A/zh
Application granted granted Critical
Publication of TWI641913B publication Critical patent/TWI641913B/zh

Links

Classifications

    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • CCHEMISTRY; METALLURGY
    • C08ORGANIC MACROMOLECULAR COMPOUNDS; THEIR PREPARATION OR CHEMICAL WORKING-UP; COMPOSITIONS BASED THEREON
    • C08GMACROMOLECULAR COMPOUNDS OBTAINED OTHERWISE THAN BY REACTIONS ONLY INVOLVING UNSATURATED CARBON-TO-CARBON BONDS
    • C08G61/00Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
    • C08G61/12Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004Photosensitive materials
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/16Coating processes; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • GPHYSICS
    • G03PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03FPHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/26Processing photosensitive materials; Apparatus therefor
    • G03F7/34Imagewise removal by selective transfer, e.g. peeling away

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Chemical & Material Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Medicinal Chemistry (AREA)
  • Polymers & Plastics (AREA)
  • Organic Chemistry (AREA)
  • Materials For Photolithography (AREA)
TW106112730A 2016-10-27 2017-04-17 聚合物、有機層組成物與形成圖案之方法 TWI641913B (zh)

Applications Claiming Priority (2)

Application Number Priority Date Filing Date Title
KR1020160141244A KR101994367B1 (ko) 2016-10-27 2016-10-27 중합체, 하드마스크 조성물 및 패턴형성방법
??10-2016-0141244 2016-10-27

Publications (2)

Publication Number Publication Date
TW201816517A TW201816517A (zh) 2018-05-01
TWI641913B true TWI641913B (zh) 2018-11-21

Family

ID=62025093

Family Applications (1)

Application Number Title Priority Date Filing Date
TW106112730A TWI641913B (zh) 2016-10-27 2017-04-17 聚合物、有機層組成物與形成圖案之方法

Country Status (3)

Country Link
KR (1) KR101994367B1 (ko)
TW (1) TWI641913B (ko)
WO (1) WO2018079936A1 (ko)

Families Citing this family (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR102171075B1 (ko) * 2018-07-12 2020-10-28 삼성에스디아이 주식회사 중합체, 하드마스크 조성물 및 패턴 형성 방법
KR102244470B1 (ko) 2018-07-18 2021-04-23 삼성에스디아이 주식회사 중합체, 유기막 조성물 및 패턴 형성 방법
KR102303554B1 (ko) * 2018-12-26 2021-09-16 삼성에스디아이 주식회사 중합체, 하드마스크 조성물 및 패턴 형성 방법

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101523642A (zh) * 2006-08-02 2009-09-02 巴斯夫燃料电池有限责任公司 具有增强性能的膜电极组件和燃料电池
TW201525066A (zh) * 2013-12-31 2015-07-01 Samsung Sdi Co Ltd 硬罩幕組成物和使用硬罩幕組成物形成圖案的方法

Family Cites Families (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP1715020A3 (en) * 1994-12-28 2007-08-29 Cambridge Display Technology Limited Polymers for use in optical devices
JP4539845B2 (ja) * 2005-03-17 2010-09-08 信越化学工業株式会社 フォトレジスト下層膜形成材料及びパターン形成方法
KR100819162B1 (ko) 2007-04-24 2008-04-03 제일모직주식회사 반사방지성을 갖는 하드마스크 조성물 및 이를 이용한재료의 패턴화 방법
JP6066092B2 (ja) * 2011-09-29 2017-01-25 日産化学工業株式会社 ジアリールアミンノボラック樹脂
US8993215B2 (en) * 2012-03-27 2015-03-31 Nissan Chemical Industries, Ltd. Resist underlayer film forming composition containing phenylindole-containing novolac resin

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN101523642A (zh) * 2006-08-02 2009-09-02 巴斯夫燃料电池有限责任公司 具有增强性能的膜电极组件和燃料电池
TW201525066A (zh) * 2013-12-31 2015-07-01 Samsung Sdi Co Ltd 硬罩幕組成物和使用硬罩幕組成物形成圖案的方法

Also Published As

Publication number Publication date
KR101994367B1 (ko) 2019-06-28
TW201816517A (zh) 2018-05-01
WO2018079936A1 (ko) 2018-05-03
KR20180046236A (ko) 2018-05-08

Similar Documents

Publication Publication Date Title
TWI609030B (zh) 聚合物、有機層組成物及形成圖案的方法
TWI554836B (zh) 硬罩幕組成物和使用所述硬罩幕組成物形成圖案的方法
TWI637975B (zh) 聚合物、有機層組成物以及形成圖案的方法
TWI597321B (zh) 有機層組成物以及形成圖案的方法
TW201714913A (zh) 聚合物、有機層組成物以及形成圖案的方法
TW201714912A (zh) 聚合物、有機層組成物以及形成圖案的方法
TW201619233A (zh) 聚合物、有機層組合物、有機層以及形成圖案的方法
KR20130078432A (ko) 하드마스크 조성물용 모노머, 상기 모노머를 포함하는 하드마스크 조성물 및 상기 하드마스크 조성물을 사용하는 패턴형성방법
US9971243B2 (en) Polymer, organic layer composition, organic layer, and method of forming patterns
TWI641913B (zh) 聚合物、有機層組成物與形成圖案之方法
TWI602845B (zh) 聚合物、有機層組成物、有機層以及形成圖案的方法
TWI644999B (zh) 聚合物、有機層組成物與形成圖案之方法
TWI639056B (zh) 有機層組成物及圖案形成方法
KR101994365B1 (ko) 중합체, 유기막 조성물 및 패턴형성방법
TWI694092B (zh) 聚合物、有機層組成物及形成圖案的方法
KR102036681B1 (ko) 화합물, 유기막 조성물, 및 패턴형성방법
KR102127256B1 (ko) 유기막 조성물, 중합체 및 패턴 형성 방법
TWI598379B (zh) 聚合物、有機層組合物以及形成圖案的方法
KR101991698B1 (ko) 화합물, 유기막 조성물, 및 패턴형성방법
TWI576335B (zh) 單體、聚合物、有機層組成物、有機層及形成圖案的方法
KR20190052477A (ko) 모노머, 중합체, 유기막 조성물 및 패턴 형성 방법
KR20190052478A (ko) 모노머, 중합체, 유기막 조성물 및 패턴 형성 방법
KR20190038111A (ko) 중합체, 유기막 조성물, 및 패턴 형성 방법
KR20190075581A (ko) 유기막 조성물 및 패턴 형성 방법
TW201823295A (zh) 有機層組成物、有機層以及形成圖案的方法