TWI638840B - 用於有機場效電晶體之二酮基吡咯并吡咯聚合物 - Google Patents
用於有機場效電晶體之二酮基吡咯并吡咯聚合物 Download PDFInfo
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- TWI638840B TWI638840B TW104104601A TW104104601A TWI638840B TW I638840 B TWI638840 B TW I638840B TW 104104601 A TW104104601 A TW 104104601A TW 104104601 A TW104104601 A TW 104104601A TW I638840 B TWI638840 B TW I638840B
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- C08G61/12—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule
- C08G61/122—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides
- C08G61/123—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds
- C08G61/124—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one nitrogen atom in the ring
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- C08G61/126—Macromolecular compounds containing atoms other than carbon in the main chain of the macromolecule derived from five- or six-membered heterocyclic compounds, other than imides derived from five-membered heterocyclic compounds with a five-membered ring containing one sulfur atom in the ring
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- C08G73/00—Macromolecular compounds obtained by reactions forming a linkage containing nitrogen with or without oxygen or carbon in the main chain of the macromolecule, not provided for in groups C08G12/00 - C08G71/00
- C08G73/06—Polycondensates having nitrogen-containing heterocyclic rings in the main chain of the macromolecule
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- H10K10/00—Organic devices specially adapted for rectifying, amplifying, oscillating or switching; Organic capacitors or resistors having potential barriers
- H10K10/40—Organic transistors
- H10K10/46—Field-effect transistors, e.g. organic thin-film transistors [OTFT]
- H10K10/462—Insulated gate field-effect transistors [IGFETs]
- H10K10/484—Insulated gate field-effect transistors [IGFETs] characterised by the channel regions
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- H10K85/10—Organic polymers or oligomers
- H10K85/111—Organic polymers or oligomers comprising aromatic, heteroaromatic, or aryl chains, e.g. polyaniline, polyphenylene or polyphenylene vinylene
- H10K85/113—Heteroaromatic compounds comprising sulfur or selene, e.g. polythiophene
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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- C08G2261/10—Definition of the polymer structure
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- C08G2261/1412—Saturated aliphatic units
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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- C08G2261/18—Definition of the polymer structure conjugated
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- C08G2261/228—Polymers, i.e. more than 10 repeat units
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- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3223—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing one or more sulfur atoms as the only heteroatom, e.g. thiophene
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/322—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed
- C08G2261/3229—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain non-condensed containing nitrogen and sulfur as heteroatoms
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- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3241—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more nitrogen atoms as the only heteroatom, e.g. carbazole
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- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3243—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing one or more sulfur atoms as the only heteroatom, e.g. benzothiophene
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/32—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain
- C08G2261/324—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed
- C08G2261/3246—Monomer units or repeat units incorporating structural elements in the main chain incorporating heteroaromatic structural elements in the main chain condensed containing nitrogen and sulfur as heteroatoms
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/33—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain
- C08G2261/334—Monomer units or repeat units incorporating structural elements in the main chain incorporating non-aromatic structural elements in the main chain containing heteroatoms
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
- C08G2261/30—Monomer units or repeat units incorporating structural elements in the main chain
- C08G2261/36—Oligomers, i.e. comprising up to 10 repeat units
- C08G2261/364—Oligomers, i.e. comprising up to 10 repeat units containing hetero atoms
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- C08G2261/40—Polymerisation processes
- C08G2261/41—Organometallic coupling reactions
- C08G2261/411—Suzuki reactions
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- C08G2261/00—Macromolecular compounds obtained by reactions forming a carbon-to-carbon link in the main chain of the macromolecule
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- H10K19/00—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00
- H10K19/10—Integrated devices, or assemblies of multiple devices, comprising at least one organic element specially adapted for rectifying, amplifying, oscillating or switching, covered by group H10K10/00 comprising field-effect transistors
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K71/00—Manufacture or treatment specially adapted for the organic devices covered by this subclass
- H10K71/10—Deposition of organic active material
- H10K71/12—Deposition of organic active material using liquid deposition, e.g. spin coating
- H10K71/15—Deposition of organic active material using liquid deposition, e.g. spin coating characterised by the solvent used
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- H10K—ORGANIC ELECTRIC SOLID-STATE DEVICES
- H10K85/00—Organic materials used in the body or electrodes of devices covered by this subclass
- H10K85/60—Organic compounds having low molecular weight
- H10K85/615—Polycyclic condensed aromatic hydrocarbons, e.g. anthracene
- H10K85/621—Aromatic anhydride or imide compounds, e.g. perylene tetra-carboxylic dianhydride or perylene tetracarboxylic di-imide
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- Chemical & Material Sciences (AREA)
- Health & Medical Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Medicinal Chemistry (AREA)
- Polymers & Plastics (AREA)
- Organic Chemistry (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Physics & Mathematics (AREA)
- Spectroscopy & Molecular Physics (AREA)
- Thin Film Transistor (AREA)
- Polyoxymethylene Polymers And Polymers With Carbon-To-Carbon Bonds (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??08168010.0 | 2008-10-31 | ||
| EP08168010 | 2008-10-31 | ||
| ??09153172.3 | 2009-02-19 | ||
| EP09153172 | 2009-02-19 | ||
| ??09160579.0 | 2009-05-19 | ||
| EP09160579 | 2009-05-19 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201529632A TW201529632A (zh) | 2015-08-01 |
| TWI638840B true TWI638840B (zh) | 2018-10-21 |
Family
ID=41353804
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW104104601A TWI638840B (zh) | 2008-10-31 | 2009-10-30 | 用於有機場效電晶體之二酮基吡咯并吡咯聚合物 |
| TW098137032A TWI570148B (zh) | 2008-10-31 | 2009-10-30 | 用於有機場效電晶體之二酮基吡咯并吡咯聚合物 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW098137032A TWI570148B (zh) | 2008-10-31 | 2009-10-30 | 用於有機場效電晶體之二酮基吡咯并吡咯聚合物 |
Country Status (7)
| Country | Link |
|---|---|
| US (3) | US8912305B2 (Direct) |
| EP (2) | EP2350161B1 (Direct) |
| JP (1) | JP5583133B2 (Direct) |
| KR (2) | KR20110091711A (Direct) |
| CN (2) | CN102272192B (Direct) |
| TW (2) | TWI638840B (Direct) |
| WO (1) | WO2010049321A1 (Direct) |
Families Citing this family (64)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| EP2035428B1 (en) * | 2006-06-30 | 2015-09-23 | Basf Se | Diketopyrrolopyrrole polymers as organic semiconductors |
| US8975359B2 (en) | 2008-10-31 | 2015-03-10 | Basf Se | Diketopyrrolopyrrole polymers for use in organic semiconductor devices |
| US10224484B2 (en) | 2008-10-31 | 2019-03-05 | Basf Se | Diketopyrrolopyrrole polymers for use in organic field effect transistors |
| WO2010108873A1 (en) | 2009-03-23 | 2010-09-30 | Basf Se | Diketopyrrolopyrrole polymers for use in organic semiconductor devices |
| CN102388046A (zh) * | 2009-04-08 | 2012-03-21 | 巴斯夫欧洲公司 | 吡咯并吡咯衍生物、其制备及作为半导体的用途 |
| US9233930B2 (en) | 2009-05-27 | 2016-01-12 | Basf Se | Polycyclic dithiophenes |
| JP5623512B2 (ja) | 2009-05-27 | 2014-11-12 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | (複素環式)芳香族化合物の重合方法 |
| BRPI1011853A2 (pt) | 2009-05-27 | 2019-09-24 | Basf Se | polímero, material, camada ou componente semicondutores orgânicos, dispositivo semicondutor, processos para a preparação de um dispositivo semicondutor orgânico, e de um polímero, e, uso do polímero e/ou do material, camada ou componente semicondutores orgãnicos. |
| CN102893422B (zh) | 2010-03-20 | 2016-03-23 | 天光材料科技股份有限公司 | 吡咯并[3,2-b]吡咯半导体化合物及采用该化合物的器件 |
| EP2571919B1 (en) | 2010-05-19 | 2018-07-11 | Basf Se | Diketopyrrolopyrrole polymers for use in organic semiconductor devices |
| KR20130094773A (ko) | 2010-06-24 | 2013-08-26 | 바스프 에스이 | 온/오프 전류비가 개선되고 임계 이동이 제어가능한 유기 전계 효과 트랜지스터 |
| KR20130044331A (ko) | 2010-07-30 | 2013-05-02 | 바스프 에스이 | 인쇄 전자에서의 양친매성 단백질 |
| GB201013820D0 (en) | 2010-08-18 | 2010-09-29 | Cambridge Display Tech Ltd | Low contact resistance organic thin film transistors |
| CN103140492B (zh) * | 2010-09-29 | 2016-06-15 | 巴斯夫欧洲公司 | 基于二酮基吡咯并吡咯的半导体 |
| US8946376B2 (en) | 2010-09-29 | 2015-02-03 | Basf Se | Semiconductors based on diketopyrrolopyrroles |
| US9187600B2 (en) | 2010-11-01 | 2015-11-17 | Basf Se | Polyimides as dielectric |
| EP2636056B1 (en) | 2010-11-01 | 2018-07-04 | Basf Se | Polyimides as dielectric |
| EP2656413B1 (en) | 2010-12-22 | 2018-06-27 | Basf Se | Semiconductor structure and method for its production |
| US9074050B2 (en) * | 2011-05-30 | 2015-07-07 | Basf Se | Process for the production of polymers by using coupling reactions |
| KR102009846B1 (ko) * | 2011-06-22 | 2019-08-12 | 바스프 에스이 | 유기 반도체 장치에 사용하기 위한 디케토피롤로피롤 올리고머 |
| TW201321427A (zh) | 2011-08-19 | 2013-06-01 | Univ Washington | 基於二酮吡咯並吡咯之新型聚(雜亞芳基亞乙烯基) |
| US9209412B2 (en) | 2011-09-02 | 2015-12-08 | Basf Se | Diketopyrrolopyrrole oligomers and compositions, comprising diketopyrrolopyrrole oligomers |
| US9543521B2 (en) | 2011-11-15 | 2017-01-10 | Basf Se | Organic semiconductor device and process for its production |
| US9978943B2 (en) | 2011-12-07 | 2018-05-22 | Basf Se | Organic field effect transistor |
| WO2013083506A1 (en) | 2011-12-07 | 2013-06-13 | Basf Se | Diketopyrrolopyrrole polymers for use in organic semiconductor devices |
| US9505877B2 (en) | 2012-04-02 | 2016-11-29 | Basf Se | Phenanthro[9,10-B]furan polymers and small molecules for electronic applications |
| WO2013150005A1 (en) | 2012-04-04 | 2013-10-10 | Basf Se | Diketopyrrolopyrrole polymers and small molecules |
| JP6207606B2 (ja) | 2012-07-23 | 2017-10-04 | ビーエーエスエフ ソシエタス・ヨーロピアBasf Se | ジチエノベンゾフランポリマーおよび電子的な応用のための小分子 |
| CN104703685B (zh) * | 2012-08-27 | 2017-03-15 | 康宁股份有限公司 | 半导体稠合噻吩聚合物油墨制剂 |
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- 2009-10-21 JP JP2011533677A patent/JP5583133B2/ja not_active Expired - Fee Related
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- 2009-10-21 CN CN201610943823.7A patent/CN107099023B/zh not_active Expired - Fee Related
- 2009-10-21 WO PCT/EP2009/063767 patent/WO2010049321A1/en not_active Ceased
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- 2009-10-30 TW TW098137032A patent/TWI570148B/zh not_active IP Right Cessation
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| KR20110091711A (ko) | 2011-08-12 |
| JP2012506928A (ja) | 2012-03-22 |
| TW201529632A (zh) | 2015-08-01 |
| CN102272192A (zh) | 2011-12-07 |
| WO2010049321A1 (en) | 2010-05-06 |
| CN102272192B (zh) | 2016-12-07 |
| KR101935644B1 (ko) | 2019-01-04 |
| TWI570148B (zh) | 2017-02-11 |
| US9893288B2 (en) | 2018-02-13 |
| EP2350161A1 (en) | 2011-08-03 |
| US20150056746A1 (en) | 2015-02-26 |
| US20170148992A1 (en) | 2017-05-25 |
| EP3456756A2 (en) | 2019-03-20 |
| CN107099023B (zh) | 2019-10-22 |
| JP5583133B2 (ja) | 2014-09-03 |
| KR20160114191A (ko) | 2016-10-04 |
| US8912305B2 (en) | 2014-12-16 |
| CN107099023A (zh) | 2017-08-29 |
| EP3456756A3 (en) | 2019-05-01 |
| US20110240981A1 (en) | 2011-10-06 |
| TW201026739A (en) | 2010-07-16 |
| EP2350161B1 (en) | 2018-11-21 |
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