TWI632149B - 第iii a族金屬的三烷基化合物之製法 - Google Patents
第iii a族金屬的三烷基化合物之製法 Download PDFInfo
- Publication number
- TWI632149B TWI632149B TW101144306A TW101144306A TWI632149B TW I632149 B TWI632149 B TW I632149B TW 101144306 A TW101144306 A TW 101144306A TW 101144306 A TW101144306 A TW 101144306A TW I632149 B TWI632149 B TW I632149B
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- Prior art keywords
- metal
- patent application
- separator
- item
- reaction mixture
- Prior art date
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- 229910052751 metal Inorganic materials 0.000 title claims abstract description 40
- 239000002184 metal Substances 0.000 title claims abstract description 39
- 150000001875 compounds Chemical class 0.000 title claims description 24
- 238000004519 manufacturing process Methods 0.000 title description 2
- 150000002739 metals Chemical class 0.000 title 1
- 238000000034 method Methods 0.000 claims abstract description 95
- 239000011541 reaction mixture Substances 0.000 claims abstract description 57
- 238000006243 chemical reaction Methods 0.000 claims abstract description 46
- 150000002736 metal compounds Chemical class 0.000 claims abstract description 40
- 239000002585 base Substances 0.000 claims abstract description 20
- 229910052733 gallium Inorganic materials 0.000 claims abstract description 17
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims abstract description 10
- 229910001508 alkali metal halide Inorganic materials 0.000 claims abstract description 5
- 150000008045 alkali metal halides Chemical class 0.000 claims abstract description 5
- 125000002496 methyl group Chemical group [H]C([H])([H])* 0.000 claims abstract description 5
- 230000000737 periodic effect Effects 0.000 claims abstract description 5
- 239000002243 precursor Substances 0.000 claims abstract description 5
- 125000001495 ethyl group Chemical group [H]C([H])([H])C([H])([H])* 0.000 claims abstract description 4
- 229910052738 indium Inorganic materials 0.000 claims abstract description 3
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims abstract description 3
- 238000002488 metal-organic chemical vapour deposition Methods 0.000 claims abstract 3
- XCZXGTMEAKBVPV-UHFFFAOYSA-N trimethylgallium Chemical group C[Ga](C)C XCZXGTMEAKBVPV-UHFFFAOYSA-N 0.000 claims description 47
- WCUXLLCKKVVCTQ-UHFFFAOYSA-M Potassium chloride Chemical compound [Cl-].[K+] WCUXLLCKKVVCTQ-UHFFFAOYSA-M 0.000 claims description 41
- FAPWRFPIFSIZLT-UHFFFAOYSA-M Sodium chloride Chemical compound [Na+].[Cl-] FAPWRFPIFSIZLT-UHFFFAOYSA-M 0.000 claims description 38
- 239000000203 mixture Substances 0.000 claims description 35
- 239000000047 product Substances 0.000 claims description 33
- 235000011164 potassium chloride Nutrition 0.000 claims description 20
- 239000001103 potassium chloride Substances 0.000 claims description 20
- 238000000926 separation method Methods 0.000 claims description 20
- 125000005234 alkyl aluminium group Chemical group 0.000 claims description 19
- 239000011780 sodium chloride Substances 0.000 claims description 19
- -1 alkyl compound Chemical class 0.000 claims description 17
- RGGPNXQUMRMPRA-UHFFFAOYSA-N triethylgallium Chemical group CC[Ga](CC)CC RGGPNXQUMRMPRA-UHFFFAOYSA-N 0.000 claims description 17
- 238000009835 boiling Methods 0.000 claims description 15
- 239000007858 starting material Substances 0.000 claims description 14
- 238000004821 distillation Methods 0.000 claims description 11
- 239000007788 liquid Substances 0.000 claims description 10
- 239000007795 chemical reaction product Substances 0.000 claims description 8
- HYZXMVILOKSUKA-UHFFFAOYSA-K chloro(dimethyl)alumane;dichloro(methyl)alumane Chemical compound C[Al](C)Cl.C[Al](Cl)Cl HYZXMVILOKSUKA-UHFFFAOYSA-K 0.000 claims description 8
- 230000029936 alkylation Effects 0.000 claims description 7
- 238000005804 alkylation reaction Methods 0.000 claims description 7
- 150000003839 salts Chemical class 0.000 claims description 6
- IBEFSUTVZWZJEL-UHFFFAOYSA-N trimethylindium Chemical group C[In](C)C IBEFSUTVZWZJEL-UHFFFAOYSA-N 0.000 claims description 6
- 238000005229 chemical vapour deposition Methods 0.000 claims description 5
- 238000000746 purification Methods 0.000 claims description 5
- CMAOLVNGLTWICC-UHFFFAOYSA-N 2-fluoro-5-methylbenzonitrile Chemical compound CC1=CC=C(F)C(C#N)=C1 CMAOLVNGLTWICC-UHFFFAOYSA-N 0.000 claims description 4
- 125000000217 alkyl group Chemical group 0.000 claims description 4
- 150000002259 gallium compounds Chemical class 0.000 claims description 3
- OTRPZROOJRIMKW-UHFFFAOYSA-N triethylindigane Chemical group CC[In](CC)CC OTRPZROOJRIMKW-UHFFFAOYSA-N 0.000 claims description 3
- 238000011437 continuous method Methods 0.000 claims description 2
- 239000000126 substance Substances 0.000 claims description 2
- 125000006527 (C1-C5) alkyl group Chemical group 0.000 claims 1
- 238000000151 deposition Methods 0.000 claims 1
- 230000008021 deposition Effects 0.000 claims 1
- 239000012808 vapor phase Substances 0.000 claims 1
- 229910052782 aluminium Inorganic materials 0.000 abstract description 7
- NEHMKBQYUWJMIP-UHFFFAOYSA-N chloromethane Chemical compound ClC NEHMKBQYUWJMIP-UHFFFAOYSA-N 0.000 abstract 1
- XOYLJNJLGBYDTH-UHFFFAOYSA-M chlorogallium Chemical compound [Ga]Cl XOYLJNJLGBYDTH-UHFFFAOYSA-M 0.000 description 42
- 238000002360 preparation method Methods 0.000 description 22
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 18
- 238000010438 heat treatment Methods 0.000 description 11
- 239000002168 alkylating agent Substances 0.000 description 10
- 229940100198 alkylating agent Drugs 0.000 description 10
- 238000003756 stirring Methods 0.000 description 10
- JLTRXTDYQLMHGR-UHFFFAOYSA-N trimethylaluminium Chemical compound C[Al](C)C JLTRXTDYQLMHGR-UHFFFAOYSA-N 0.000 description 10
- 229910052786 argon Inorganic materials 0.000 description 9
- UPWPDUACHOATKO-UHFFFAOYSA-K gallium trichloride Chemical compound Cl[Ga](Cl)Cl UPWPDUACHOATKO-UHFFFAOYSA-K 0.000 description 9
- 238000005160 1H NMR spectroscopy Methods 0.000 description 8
- 239000011734 sodium Substances 0.000 description 8
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 6
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 6
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Substances O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 6
- 239000004065 semiconductor Substances 0.000 description 5
- 229910001514 alkali metal chloride Inorganic materials 0.000 description 4
- 239000003153 chemical reaction reagent Substances 0.000 description 4
- OWQWEJKPOUNPPG-UHFFFAOYSA-M chloro(dimethyl)gallane Chemical compound C[Ga](C)Cl OWQWEJKPOUNPPG-UHFFFAOYSA-M 0.000 description 4
- 239000012535 impurity Substances 0.000 description 4
- 239000011261 inert gas Substances 0.000 description 4
- ZMANZCXQSJIPKH-UHFFFAOYSA-N Triethylamine Chemical compound CCN(CC)CC ZMANZCXQSJIPKH-UHFFFAOYSA-N 0.000 description 3
- 230000002411 adverse Effects 0.000 description 3
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 3
- 230000015572 biosynthetic process Effects 0.000 description 3
- 230000000052 comparative effect Effects 0.000 description 3
- 238000010924 continuous production Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 229910001507 metal halide Inorganic materials 0.000 description 3
- 150000005309 metal halides Chemical class 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 229910052757 nitrogen Inorganic materials 0.000 description 3
- 239000003960 organic solvent Substances 0.000 description 3
- 125000002524 organometallic group Chemical group 0.000 description 3
- 229910052708 sodium Inorganic materials 0.000 description 3
- 239000007787 solid Substances 0.000 description 3
- 238000003786 synthesis reaction Methods 0.000 description 3
- DGAQECJNVWCQMB-PUAWFVPOSA-M Ilexoside XXIX Chemical compound C[C@@H]1CC[C@@]2(CC[C@@]3(C(=CC[C@H]4[C@]3(CC[C@@H]5[C@@]4(CC[C@@H](C5(C)C)OS(=O)(=O)[O-])C)C)[C@@H]2[C@]1(C)O)C)C(=O)O[C@H]6[C@@H]([C@H]([C@@H]([C@H](O6)CO)O)O)O.[Na+] DGAQECJNVWCQMB-PUAWFVPOSA-M 0.000 description 2
- OFBQJSOFQDEBGM-UHFFFAOYSA-N Pentane Chemical compound CCCCC OFBQJSOFQDEBGM-UHFFFAOYSA-N 0.000 description 2
- 230000002152 alkylating effect Effects 0.000 description 2
- 239000012022 methylating agents Substances 0.000 description 2
- 238000004064 recycling Methods 0.000 description 2
- PUZPDOWCWNUUKD-UHFFFAOYSA-M sodium fluoride Chemical compound [F-].[Na+] PUZPDOWCWNUUKD-UHFFFAOYSA-M 0.000 description 2
- 239000002904 solvent Substances 0.000 description 2
- 230000002269 spontaneous effect Effects 0.000 description 2
- VOITXYVAKOUIBA-UHFFFAOYSA-N triethylaluminium Chemical compound CC[Al](CC)CC VOITXYVAKOUIBA-UHFFFAOYSA-N 0.000 description 2
- OCJBOOLMMGQPQU-UHFFFAOYSA-N 1,4-dichlorobenzene Chemical compound ClC1=CC=C(Cl)C=C1 OCJBOOLMMGQPQU-UHFFFAOYSA-N 0.000 description 1
- KAXRWMOLNJZCEW-UHFFFAOYSA-N 2-amino-4-(2-aminophenyl)-4-oxobutanoic acid;sulfuric acid Chemical compound OS(O)(=O)=O.OC(=O)C(N)CC(=O)C1=CC=CC=C1N KAXRWMOLNJZCEW-UHFFFAOYSA-N 0.000 description 1
- 229910016467 AlCl 4 Inorganic materials 0.000 description 1
- 229910001218 Gallium arsenide Inorganic materials 0.000 description 1
- 239000007818 Grignard reagent Substances 0.000 description 1
- 229910021617 Indium monochloride Inorganic materials 0.000 description 1
- 238000005481 NMR spectroscopy Methods 0.000 description 1
- 206010034972 Photosensitivity reaction Diseases 0.000 description 1
- 229910001515 alkali metal fluoride Inorganic materials 0.000 description 1
- 229910052784 alkaline earth metal Inorganic materials 0.000 description 1
- 150000001342 alkaline earth metals Chemical class 0.000 description 1
- 150000001350 alkyl halides Chemical class 0.000 description 1
- FOJZPLNOZUNMJO-UHFFFAOYSA-M chloro(dimethyl)indigane Chemical compound [Cl-].C[In+]C FOJZPLNOZUNMJO-UHFFFAOYSA-M 0.000 description 1
- 238000002485 combustion reaction Methods 0.000 description 1
- 230000006837 decompression Effects 0.000 description 1
- 229940117389 dichlorobenzene Drugs 0.000 description 1
- SPIUPAOJDZNUJH-UHFFFAOYSA-N diethylmercury Chemical compound CC[Hg]CC SPIUPAOJDZNUJH-UHFFFAOYSA-N 0.000 description 1
- JGHYBJVUQGTEEB-UHFFFAOYSA-M dimethylalumanylium;chloride Chemical compound C[Al](C)Cl JGHYBJVUQGTEEB-UHFFFAOYSA-M 0.000 description 1
- ATZBPOVXVPIOMR-UHFFFAOYSA-N dimethylmercury Chemical compound C[Hg]C ATZBPOVXVPIOMR-UHFFFAOYSA-N 0.000 description 1
- 150000002170 ethers Chemical class 0.000 description 1
- 230000007717 exclusion Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000007789 gas Substances 0.000 description 1
- 150000004795 grignard reagents Chemical class 0.000 description 1
- 231100000086 high toxicity Toxicity 0.000 description 1
- APHGZSBLRQFRCA-UHFFFAOYSA-M indium(1+);chloride Chemical compound [In]Cl APHGZSBLRQFRCA-UHFFFAOYSA-M 0.000 description 1
- 238000009776 industrial production Methods 0.000 description 1
- 239000000543 intermediate Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- AUHZEENZYGFFBQ-UHFFFAOYSA-N mesitylene Substances CC1=CC(C)=CC(C)=C1 AUHZEENZYGFFBQ-UHFFFAOYSA-N 0.000 description 1
- 125000001827 mesitylenyl group Chemical group [H]C1=C(C(*)=C(C([H])=C1C([H])([H])[H])C([H])([H])[H])C([H])([H])[H] 0.000 description 1
- 229910001510 metal chloride Inorganic materials 0.000 description 1
- 230000011987 methylation Effects 0.000 description 1
- 238000007069 methylation reaction Methods 0.000 description 1
- 238000004377 microelectronic Methods 0.000 description 1
- 238000002156 mixing Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 231100000252 nontoxic Toxicity 0.000 description 1
- 230000003000 nontoxic effect Effects 0.000 description 1
- 238000005580 one pot reaction Methods 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 150000002902 organometallic compounds Chemical class 0.000 description 1
- 230000036211 photosensitivity Effects 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 238000010992 reflux Methods 0.000 description 1
- 239000011833 salt mixture Substances 0.000 description 1
- 238000010517 secondary reaction Methods 0.000 description 1
- 235000013024 sodium fluoride Nutrition 0.000 description 1
- 239000011775 sodium fluoride Substances 0.000 description 1
- 229910001220 stainless steel Inorganic materials 0.000 description 1
- 239000010935 stainless steel Substances 0.000 description 1
- MCULRUJILOGHCJ-UHFFFAOYSA-N triisobutylaluminium Chemical compound CC(C)C[Al](CC(C)C)CC(C)C MCULRUJILOGHCJ-UHFFFAOYSA-N 0.000 description 1
- JHUXFIPODALNAN-UHFFFAOYSA-N tris(2-methylpropyl)gallane Chemical compound CC(C)C[Ga](CC(C)C)CC(C)C JHUXFIPODALNAN-UHFFFAOYSA-N 0.000 description 1
- 238000010518 undesired secondary reaction Methods 0.000 description 1
Classifications
-
- C—CHEMISTRY; METALLURGY
- C07—ORGANIC CHEMISTRY
- C07F—ACYCLIC, CARBOCYCLIC OR HETEROCYCLIC COMPOUNDS CONTAINING ELEMENTS OTHER THAN CARBON, HYDROGEN, HALOGEN, OXYGEN, NITROGEN, SULFUR, SELENIUM OR TELLURIUM
- C07F5/00—Compounds containing elements of Groups 3 or 13 of the Periodic Table
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/06—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material
- C23C16/18—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of metallic material from metallo-organic compounds
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
- C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
- C23C16/301—AIII BV compounds, where A is Al, Ga, In or Tl and B is N, P, As, Sb or Bi
-
- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02P—CLIMATE CHANGE MITIGATION TECHNOLOGIES IN THE PRODUCTION OR PROCESSING OF GOODS
- Y02P20/00—Technologies relating to chemical industry
- Y02P20/50—Improvements relating to the production of bulk chemicals
- Y02P20/582—Recycling of unreacted starting or intermediate materials
Landscapes
- Chemical & Material Sciences (AREA)
- Organic Chemistry (AREA)
- General Chemical & Material Sciences (AREA)
- Chemical Kinetics & Catalysis (AREA)
- Engineering & Computer Science (AREA)
- Materials Engineering (AREA)
- Mechanical Engineering (AREA)
- Metallurgy (AREA)
- Inorganic Chemistry (AREA)
- Chemical Vapour Deposition (AREA)
- Catalysts (AREA)
Applications Claiming Priority (4)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| ??102011119487.1 | 2011-11-28 | ||
| DE102011119487 | 2011-11-28 | ||
| ??102012013941.1 | 2012-07-16 | ||
| DE201210013941 DE102012013941A1 (de) | 2012-07-16 | 2012-07-16 | Verfahren zur Herstellung von Galliumtrialkylverbindungen |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201329091A TW201329091A (zh) | 2013-07-16 |
| TWI632149B true TWI632149B (zh) | 2018-08-11 |
Family
ID=47278289
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW101144306A TWI632149B (zh) | 2011-11-28 | 2012-11-27 | 第iii a族金屬的三烷基化合物之製法 |
| TW106104275A TWI632151B (zh) | 2011-11-28 | 2012-11-27 | 第iiia族金屬的三烷基化合物之製法 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106104275A TWI632151B (zh) | 2011-11-28 | 2012-11-27 | 第iiia族金屬的三烷基化合物之製法 |
Country Status (9)
| Country | Link |
|---|---|
| US (2) | US9695201B2 (enExample) |
| EP (2) | EP2785725B1 (enExample) |
| JP (6) | JP6165160B2 (enExample) |
| KR (3) | KR102231740B1 (enExample) |
| CN (5) | CN103958529A (enExample) |
| IN (1) | IN2014CN02940A (enExample) |
| RU (2) | RU2014126212A (enExample) |
| TW (2) | TWI632149B (enExample) |
| WO (2) | WO2013083450A1 (enExample) |
Families Citing this family (9)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| TWI632149B (zh) | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iii a族金屬的三烷基化合物之製法 |
| US8513447B1 (en) * | 2012-02-01 | 2013-08-20 | Chemtura Corporation | Preparation of tri-alkyl gallium or tri-alkyl indium compounds |
| CN105473599B (zh) * | 2013-08-22 | 2018-08-28 | 优美科股份公司及两合公司 | 用于生产烷基铟化合物的方法及其用途 |
| WO2015024894A1 (de) | 2013-08-22 | 2015-02-26 | Umicore Ag & Co. Kg | Verfahren zur herstellung von alkylindium-verbindungen und deren verwendung |
| JP6413801B2 (ja) * | 2014-02-07 | 2018-10-31 | 宇部興産株式会社 | トリアルキルガリウムの製造方法 |
| JP6742921B2 (ja) | 2014-03-14 | 2020-08-19 | ユミコア・アクチエンゲゼルシャフト・ウント・コムパニー・コマンディットゲゼルシャフトＵｍｉｃｏｒｅ ＡＧ ＆ Ｃｏ．ＫＧ | トリアルキルガリウム化合物の調製及びその使用 |
| EP3409676B1 (de) * | 2017-05-29 | 2020-10-14 | Umicore Ag & Co. Kg | Herstellung von trialkylindiumverbindungen in gegenwart von carboxylaten |
| KR102228897B1 (ko) * | 2017-10-31 | 2021-03-17 | 누리온 케미칼즈 인터내셔널 비.브이. | 갈륨 클로라이드의 저장 및/또는 수송 방법 |
| WO2019115377A1 (en) * | 2017-12-13 | 2019-06-20 | Akzo Nobel Chemicals International B.V. | Process for purification of dimethyl aluminium chloride |
Citations (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5043462A (en) * | 1989-04-28 | 1991-08-27 | Messer Greisheim | Process for the production of gallium-alkyl compounds |
Family Cites Families (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| NL264689A (enExample) | 1960-05-14 | |||
| DE4005726A1 (de) * | 1989-04-28 | 1990-10-31 | Messer Griesheim Gmbh | Verfahren zur herstellung von galliumalkylverbindungen |
| US5473090A (en) | 1992-07-02 | 1995-12-05 | Air Products And Chemicals, Inc. | Process for the preparation of trialkyl compounds of group 3a metals |
| US5350869A (en) | 1993-07-27 | 1994-09-27 | Cvd, Incorporated | Purification of trialkylgallium, synthesis of trialkylgallium |
| US5756786A (en) | 1997-06-25 | 1998-05-26 | Morton International, Inc. | High purity trimethylindium, method of synthesis |
| JP2000005503A (ja) | 1998-06-24 | 2000-01-11 | Nippon Shokubai Co Ltd | 反応蒸留装置および反応蒸留方法 |
| GB2344822A (en) | 1998-12-19 | 2000-06-21 | Epichem Ltd | Organometallic compound production using distillation |
| GB0017968D0 (en) | 2000-07-22 | 2000-09-13 | Epichem Ltd | An improved process and apparatus for the isolation of pure,or substantially pure,organometallic compounds |
| KR100852361B1 (ko) * | 2001-04-06 | 2008-08-14 | 롬 앤드 하스 일렉트로닉 머트어리얼즈, 엘.엘.씨 | 트리알킬 ｖａ족 금속 화합물 |
| US6770769B2 (en) | 2002-04-06 | 2004-08-03 | Shipley Company, L.L.C. | Trialkylindium preparation |
| JP4054997B2 (ja) | 2003-06-19 | 2008-03-05 | 信越化学工業株式会社 | 高純度アルキルガリウムの製造方法 |
| TW200619222A (en) | 2004-09-02 | 2006-06-16 | Rohm & Haas Elect Mat | Method for making organometallic compounds |
| JP4470682B2 (ja) | 2004-10-13 | 2010-06-02 | 住友化学株式会社 | トリメチルガリウムの製造方法 |
| JP4774776B2 (ja) | 2005-03-23 | 2011-09-14 | 日亜化学工業株式会社 | トリアルキルガリウムの製造方法 |
| US7667063B2 (en) | 2005-03-23 | 2010-02-23 | Nichia Corporation | Method for producing trialkyl gallium |
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| CN1872862A (zh) | 2005-06-03 | 2006-12-06 | 大连保税区科利德化工科技开发有限公司 | 三甲基镓制备和提纯方法 |
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| US20090149008A1 (en) | 2007-10-05 | 2009-06-11 | Applied Materials, Inc. | Method for depositing group iii/v compounds |
| JP2009126835A (ja) | 2007-11-27 | 2009-06-11 | Ube Ind Ltd | 高純度トリアルキルガリウム及びその製法 |
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| TWI632149B (zh) | 2011-11-28 | 2018-08-11 | 烏明克股份有限兩合公司 | 第iii a族金屬的三烷基化合物之製法 |
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