TWI629748B - 用於薄基板搬運的靜電載體 - Google Patents
用於薄基板搬運的靜電載體 Download PDFInfo
- Publication number
- TWI629748B TWI629748B TW106117956A TW106117956A TWI629748B TW I629748 B TWI629748 B TW I629748B TW 106117956 A TW106117956 A TW 106117956A TW 106117956 A TW106117956 A TW 106117956A TW I629748 B TWI629748 B TW I629748B
- Authority
- TW
- Taiwan
- Prior art keywords
- electrostatic chuck
- electrode
- dielectric layer
- top surface
- connector
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 61
- 230000002093 peripheral effect Effects 0.000 claims description 21
- 229910010293 ceramic material Inorganic materials 0.000 claims description 7
- 239000011521 glass Substances 0.000 claims description 5
- 230000008878 coupling Effects 0.000 claims description 3
- 238000010168 coupling process Methods 0.000 claims description 3
- 238000005859 coupling reaction Methods 0.000 claims description 3
- 238000012546 transfer Methods 0.000 abstract description 8
- 230000001939 inductive effect Effects 0.000 abstract description 2
- 239000007789 gas Substances 0.000 description 67
- 238000012545 processing Methods 0.000 description 21
- 238000000034 method Methods 0.000 description 15
- 239000004020 conductor Substances 0.000 description 13
- 239000000463 material Substances 0.000 description 8
- 230000001976 improved effect Effects 0.000 description 7
- NJPPVKZQTLUDBO-UHFFFAOYSA-N novaluron Chemical compound C1=C(Cl)C(OC(F)(F)C(OC(F)(F)F)F)=CC=C1NC(=O)NC(=O)C1=C(F)C=CC=C1F NJPPVKZQTLUDBO-UHFFFAOYSA-N 0.000 description 6
- 125000006850 spacer group Chemical group 0.000 description 6
- 230000035882 stress Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 4
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 4
- 239000000919 ceramic Substances 0.000 description 4
- 229910052802 copper Inorganic materials 0.000 description 4
- 239000010949 copper Substances 0.000 description 4
- 238000005336 cracking Methods 0.000 description 4
- WABPQHHGFIMREM-BKFZFHPZSA-N lead-212 Chemical compound [212Pb] WABPQHHGFIMREM-BKFZFHPZSA-N 0.000 description 4
- 239000003989 dielectric material Substances 0.000 description 3
- 238000013022 venting Methods 0.000 description 3
- XKRFYHLGVUSROY-UHFFFAOYSA-N Argon Chemical compound [Ar] XKRFYHLGVUSROY-UHFFFAOYSA-N 0.000 description 2
- IJGRMHOSHXDMSA-UHFFFAOYSA-N Atomic nitrogen Chemical compound N#N IJGRMHOSHXDMSA-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 238000001816 cooling Methods 0.000 description 2
- PMHQVHHXPFUNSP-UHFFFAOYSA-M copper(1+);methylsulfanylmethane;bromide Chemical compound Br[Cu].CSC PMHQVHHXPFUNSP-UHFFFAOYSA-M 0.000 description 2
- 230000007797 corrosion Effects 0.000 description 2
- 238000005260 corrosion Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 2
- 230000008030 elimination Effects 0.000 description 2
- 238000003379 elimination reaction Methods 0.000 description 2
- 238000005530 etching Methods 0.000 description 2
- 238000010438 heat treatment Methods 0.000 description 2
- 239000001307 helium Substances 0.000 description 2
- 229910052734 helium Inorganic materials 0.000 description 2
- SWQJXJOGLNCZEY-UHFFFAOYSA-N helium atom Chemical compound [He] SWQJXJOGLNCZEY-UHFFFAOYSA-N 0.000 description 2
- 239000007769 metal material Substances 0.000 description 2
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- 239000002245 particle Substances 0.000 description 2
- 238000005240 physical vapour deposition Methods 0.000 description 2
- 229910000838 Al alloy Inorganic materials 0.000 description 1
- 229910052684 Cerium Inorganic materials 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 1
- NRTOMJZYCJJWKI-UHFFFAOYSA-N Titanium nitride Chemical compound [Ti]#N NRTOMJZYCJJWKI-UHFFFAOYSA-N 0.000 description 1
- RVSGESPTHDDNTH-UHFFFAOYSA-N alumane;tantalum Chemical compound [AlH3].[Ta] RVSGESPTHDDNTH-UHFFFAOYSA-N 0.000 description 1
- JNDMLEXHDPKVFC-UHFFFAOYSA-N aluminum;oxygen(2-);yttrium(3+) Chemical compound [O-2].[O-2].[O-2].[Al+3].[Y+3] JNDMLEXHDPKVFC-UHFFFAOYSA-N 0.000 description 1
- 238000000137 annealing Methods 0.000 description 1
- 229910052786 argon Inorganic materials 0.000 description 1
- QVGXLLKOCUKJST-UHFFFAOYSA-N atomic oxygen Chemical compound [O] QVGXLLKOCUKJST-UHFFFAOYSA-N 0.000 description 1
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 description 1
- 238000004140 cleaning Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000008021 deposition Effects 0.000 description 1
- 238000005137 deposition process Methods 0.000 description 1
- 238000013461 design Methods 0.000 description 1
- 238000009713 electroplating Methods 0.000 description 1
- 238000005538 encapsulation Methods 0.000 description 1
- 239000012530 fluid Substances 0.000 description 1
- 239000001257 hydrogen Substances 0.000 description 1
- 229910052739 hydrogen Inorganic materials 0.000 description 1
- 125000004435 hydrogen atom Chemical class [H]* 0.000 description 1
- 239000011261 inert gas Substances 0.000 description 1
- 230000000977 initiatory effect Effects 0.000 description 1
- 239000011810 insulating material Substances 0.000 description 1
- 238000005468 ion implantation Methods 0.000 description 1
- WABPQHHGFIMREM-RKEGKUSMSA-N lead-214 Chemical compound [214Pb] WABPQHHGFIMREM-RKEGKUSMSA-N 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- NFFIWVVINABMKP-UHFFFAOYSA-N methylidynetantalum Chemical compound [Ta]#C NFFIWVVINABMKP-UHFFFAOYSA-N 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- 229910052758 niobium Inorganic materials 0.000 description 1
- 239000010955 niobium Substances 0.000 description 1
- GUCVJGMIXFAOAE-UHFFFAOYSA-N niobium atom Chemical compound [Nb] GUCVJGMIXFAOAE-UHFFFAOYSA-N 0.000 description 1
- 229910052757 nitrogen Inorganic materials 0.000 description 1
- QJGQUHMNIGDVPM-UHFFFAOYSA-N nitrogen group Chemical group [N] QJGQUHMNIGDVPM-UHFFFAOYSA-N 0.000 description 1
- 239000001301 oxygen Substances 0.000 description 1
- 229910052760 oxygen Inorganic materials 0.000 description 1
- 238000009832 plasma treatment Methods 0.000 description 1
- 229920000642 polymer Polymers 0.000 description 1
- 230000001681 protective effect Effects 0.000 description 1
- 239000010453 quartz Substances 0.000 description 1
- 150000003254 radicals Chemical class 0.000 description 1
- 238000005488 sandblasting Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 238000007650 screen-printing Methods 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N silicon dioxide Inorganic materials O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 1
- 238000005476 soldering Methods 0.000 description 1
- 239000000126 substance Substances 0.000 description 1
- 230000008093 supporting effect Effects 0.000 description 1
- 229910003468 tantalcarbide Inorganic materials 0.000 description 1
- 230000008646 thermal stress Effects 0.000 description 1
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 1
- 229910019901 yttrium aluminum garnet Inorganic materials 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
- H01L21/6833—Details of electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/6831—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using electrostatic chucks
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68728—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by a plurality of separate clamping members, e.g. clamping fingers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68735—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by edge profile or support profile
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
- H01L21/683—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping
- H01L21/687—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches
- H01L21/68714—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support
- H01L21/68785—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere for supporting or gripping using mechanical means, e.g. chucks, clamps or pinches the wafers being placed on a susceptor, stage or support characterised by the mechanical construction of the susceptor, stage or support
Landscapes
- Engineering & Computer Science (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Container, Conveyance, Adherence, Positioning, Of Wafer (AREA)
- Drying Of Semiconductors (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361862471P | 2013-08-05 | 2013-08-05 | |
| US61/862,471 | 2013-08-05 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201737411A TW201737411A (zh) | 2017-10-16 |
| TWI629748B true TWI629748B (zh) | 2018-07-11 |
Family
ID=52427454
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW106117956A TWI629748B (zh) | 2013-08-05 | 2014-07-31 | 用於薄基板搬運的靜電載體 |
| TW103126239A TWI613756B (zh) | 2013-08-05 | 2014-07-31 | 用於薄基板搬運的靜電載體 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103126239A TWI613756B (zh) | 2013-08-05 | 2014-07-31 | 用於薄基板搬運的靜電載體 |
Country Status (6)
| Country | Link |
|---|---|
| US (2) | US9536768B2 (enExample) |
| JP (2) | JP6518666B2 (enExample) |
| KR (2) | KR102139682B1 (enExample) |
| CN (2) | CN110085546B (enExample) |
| TW (2) | TWI629748B (enExample) |
| WO (1) | WO2015020810A1 (enExample) |
Families Citing this family (12)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6518666B2 (ja) * | 2013-08-05 | 2019-05-22 | アプライド マテリアルズ インコーポレイテッドＡｐｐｌｉｅｄ Ｍａｔｅｒｉａｌｓ，Ｉｎｃｏｒｐｏｒａｔｅｄ | 薄い基板をハンドリングするための静電キャリア |
| JP6282080B2 (ja) * | 2013-10-30 | 2018-02-21 | 株式会社日立ハイテクノロジーズ | プラズマ処理装置 |
| US9551070B2 (en) * | 2014-05-30 | 2017-01-24 | Applied Materials, Inc. | In-situ corrosion resistant substrate support coating |
| CN108474109B (zh) | 2016-01-13 | 2021-08-03 | 应用材料公司 | 保持基板的保持布置、支撑基板的载体、沉积系统、保持基板的方法和释放基板的方法 |
| DE102016206193A1 (de) * | 2016-04-13 | 2017-10-19 | Trumpf Gmbh + Co. Kg | Elektroadhäsionsgreifer mit fraktalen Elektroden |
| JP6867686B2 (ja) * | 2017-06-30 | 2021-05-12 | 株式会社 セルバック | 接合装置 |
| KR102515262B1 (ko) * | 2018-12-05 | 2023-03-29 | 가부시키가이샤 아루박 | 정전척, 진공처리장치 및 기판처리방법 |
| US11887878B2 (en) * | 2019-06-28 | 2024-01-30 | Applied Materials, Inc. | Detachable biasable electrostatic chuck for high temperature applications |
| US20210381101A1 (en) * | 2020-06-03 | 2021-12-09 | Applied Materials, Inc. | Substrate processing system |
| US11749542B2 (en) * | 2020-07-27 | 2023-09-05 | Applied Materials, Inc. | Apparatus, system, and method for non-contact temperature monitoring of substrate supports |
| US12046503B2 (en) | 2021-10-26 | 2024-07-23 | Applied Materials, Inc. | Chuck for processing semiconductor workpieces at high temperatures |
| JP2025119839A (ja) * | 2024-02-02 | 2025-08-15 | 信越化学工業株式会社 | 静電吸着機能を有する加熱装置 |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US5982607A (en) * | 1996-05-08 | 1999-11-09 | Applied Materials, Inc. | Monopolar electrostatic chuck having an electrode in contact with a workpiece |
| US6768627B1 (en) * | 1999-05-25 | 2004-07-27 | Toto Ltd. | Electrostatic chuck and processing apparatus for insulative substrate |
Family Cites Families (55)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP2779950B2 (ja) * | 1989-04-25 | 1998-07-23 | 東陶機器株式会社 | 静電チャックの電圧印加方法および電圧印加装置 |
| JP2638649B2 (ja) * | 1989-12-22 | 1997-08-06 | 東京エレクトロン株式会社 | 静電チャック |
| JPH0478133A (ja) * | 1990-07-20 | 1992-03-12 | Tokyo Electron Ltd | プラズマ処理装置 |
| JP3095790B2 (ja) | 1991-01-22 | 2000-10-10 | 富士電機株式会社 | 静電チャック |
| JPH07257751A (ja) | 1994-03-18 | 1995-10-09 | Kanagawa Kagaku Gijutsu Akad | 静電浮上搬送装置及びその静電浮上用電極 |
| US5528451A (en) * | 1994-11-02 | 1996-06-18 | Applied Materials, Inc | Erosion resistant electrostatic chuck |
| US5982986A (en) * | 1995-02-03 | 1999-11-09 | Applied Materials, Inc. | Apparatus and method for rotationally aligning and degassing semiconductor substrate within single vacuum chamber |
| JP3596127B2 (ja) * | 1995-12-04 | 2004-12-02 | ソニー株式会社 | 静電チャック、薄板保持装置、半導体製造装置、搬送方法及び半導体の製造方法 |
| US6529362B2 (en) * | 1997-03-06 | 2003-03-04 | Applied Materials Inc. | Monocrystalline ceramic electrostatic chuck |
| US6074488A (en) * | 1997-09-16 | 2000-06-13 | Applied Materials, Inc | Plasma chamber support having an electrically coupled collar ring |
| US5880924A (en) * | 1997-12-01 | 1999-03-09 | Applied Materials, Inc. | Electrostatic chuck capable of rapidly dechucking a substrate |
| KR20000062459A (ko) * | 1999-01-13 | 2000-10-25 | 조셉 제이. 스위니 | 온도 제어 및 파열 저항성이 개선된 정전기 척 |
| JP2000332089A (ja) * | 1999-05-18 | 2000-11-30 | Toshiba Ceramics Co Ltd | ウエハ加熱保持用静電チャック |
| JP2001035907A (ja) | 1999-07-26 | 2001-02-09 | Ulvac Japan Ltd | 吸着装置 |
| KR20020046214A (ko) | 2000-12-11 | 2002-06-20 | 어드밴스드 세라믹스 인터내셔날 코포레이션 | 정전척 및 그 제조방법 |
| JP2002357838A (ja) | 2001-05-31 | 2002-12-13 | Hitachi Industries Co Ltd | 基板貼り合わせ方法及びその装置 |
| JP3870824B2 (ja) * | 2001-09-11 | 2007-01-24 | 住友電気工業株式会社 | 被処理物保持体、半導体製造装置用サセプタおよび処理装置 |
| JP2003179128A (ja) | 2001-12-11 | 2003-06-27 | Ngk Spark Plug Co Ltd | 静電チャック |
| JP4021661B2 (ja) * | 2001-12-27 | 2007-12-12 | 株式会社巴川製紙所 | 静電チャック装置 |
| JP2003243493A (ja) | 2002-02-15 | 2003-08-29 | Taiheiyo Cement Corp | 双極型静電チャック |
| JP2003282692A (ja) * | 2002-03-27 | 2003-10-03 | Matsushita Electric Ind Co Ltd | 基板搬送用トレーおよびこれを用いた基板処理装置 |
| KR100511854B1 (ko) * | 2002-06-18 | 2005-09-02 | 아네르바 가부시키가이샤 | 정전 흡착 장치 |
| US7916447B2 (en) | 2003-07-08 | 2011-03-29 | Future Vision Inc. | Electrostatic chuck for substrate stage, electrode used for the chuck, and treating system having the chuck and electrode |
| JP3894562B2 (ja) * | 2003-10-01 | 2007-03-22 | キヤノン株式会社 | 基板吸着装置、露光装置およびデバイス製造方法 |
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| US20070223173A1 (en) | 2004-03-19 | 2007-09-27 | Hiroshi Fujisawa | Bipolar Electrostatic Chuck |
| US7697260B2 (en) * | 2004-03-31 | 2010-04-13 | Applied Materials, Inc. | Detachable electrostatic chuck |
| JP4540407B2 (ja) * | 2004-06-28 | 2010-09-08 | 京セラ株式会社 | 静電チャック |
| JP4237148B2 (ja) | 2005-02-17 | 2009-03-11 | 住友大阪セメント株式会社 | 黒色微粒子分散液とそれを用いた黒色遮光膜及び黒色遮光膜付き基材 |
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2014
- 2014-07-24 JP JP2016533317A patent/JP6518666B2/ja active Active
- 2014-07-24 CN CN201910019606.2A patent/CN110085546B/zh active Active
- 2014-07-24 CN CN201480038575.0A patent/CN105408992B/zh active Active
- 2014-07-24 KR KR1020177014510A patent/KR102139682B1/ko active Active
- 2014-07-24 WO PCT/US2014/048065 patent/WO2015020810A1/en not_active Ceased
- 2014-07-24 KR KR1020167005660A patent/KR101812666B1/ko active Active
- 2014-07-31 TW TW106117956A patent/TWI629748B/zh active
- 2014-07-31 TW TW103126239A patent/TWI613756B/zh active
- 2014-08-04 US US14/451,167 patent/US9536768B2/en active Active
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2016
- 2016-11-16 US US15/353,538 patent/US9779975B2/en active Active
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2019
- 2019-04-22 JP JP2019080749A patent/JP6968120B2/ja active Active
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Also Published As
| Publication number | Publication date |
|---|---|
| CN110085546B (zh) | 2023-05-16 |
| TW201519362A (zh) | 2015-05-16 |
| JP2019125811A (ja) | 2019-07-25 |
| CN110085546A (zh) | 2019-08-02 |
| KR102139682B1 (ko) | 2020-07-30 |
| US20150036260A1 (en) | 2015-02-05 |
| JP2016529718A (ja) | 2016-09-23 |
| CN105408992B (zh) | 2019-01-29 |
| US9779975B2 (en) | 2017-10-03 |
| JP6518666B2 (ja) | 2019-05-22 |
| KR101812666B1 (ko) | 2017-12-27 |
| KR20170063982A (ko) | 2017-06-08 |
| CN105408992A (zh) | 2016-03-16 |
| TW201737411A (zh) | 2017-10-16 |
| WO2015020810A1 (en) | 2015-02-12 |
| KR20160040656A (ko) | 2016-04-14 |
| US20170062261A1 (en) | 2017-03-02 |
| US9536768B2 (en) | 2017-01-03 |
| TWI613756B (zh) | 2018-02-01 |
| JP6968120B2 (ja) | 2021-11-17 |
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