TWI626685B - 具有溫控之多充氣部噴淋頭 - Google Patents
具有溫控之多充氣部噴淋頭 Download PDFInfo
- Publication number
- TWI626685B TWI626685B TW103104956A TW103104956A TWI626685B TW I626685 B TWI626685 B TW I626685B TW 103104956 A TW103104956 A TW 103104956A TW 103104956 A TW103104956 A TW 103104956A TW I626685 B TWI626685 B TW I626685B
- Authority
- TW
- Taiwan
- Prior art keywords
- radical
- plate
- diffusion plate
- precursor delivery
- radical diffusion
- Prior art date
Links
Classifications
-
- F—MECHANICAL ENGINEERING; LIGHTING; HEATING; WEAPONS; BLASTING
- F28—HEAT EXCHANGE IN GENERAL
- F28F—DETAILS OF HEAT-EXCHANGE AND HEAT-TRANSFER APPARATUS, OF GENERAL APPLICATION
- F28F3/00—Plate-like or laminated elements; Assemblies of plate-like or laminated elements
- F28F3/02—Elements or assemblies thereof with means for increasing heat-transfer area, e.g. with fins, with recesses, with corrugations
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/4401—Means for minimising impurities, e.g. dust, moisture or residual gas, in the reaction chamber
- C23C16/4404—Coatings or surface treatment on the inside of the reaction chamber or on parts thereof
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/452—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by activating reactive gas streams before their introduction into the reaction chamber, e.g. by ionisation or addition of reactive species
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45565—Shower nozzles
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
- C23C16/45563—Gas nozzles
- C23C16/45574—Nozzles for more than one gas
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
- H01J37/32082—Radio frequency generated discharge
- H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/3244—Gas supply means
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
- H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
- H01J37/32—Gas-filled discharge tubes
- H01J37/32431—Constructional details of the reactor
- H01J37/32458—Vessel
- H01J37/32522—Temperature
Landscapes
- Chemical & Material Sciences (AREA)
- Engineering & Computer Science (AREA)
- Mechanical Engineering (AREA)
- Chemical Kinetics & Catalysis (AREA)
- General Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Metallurgy (AREA)
- Organic Chemistry (AREA)
- Physics & Mathematics (AREA)
- Plasma & Fusion (AREA)
- Analytical Chemistry (AREA)
- Thermal Sciences (AREA)
- General Engineering & Computer Science (AREA)
- Chemical Vapour Deposition (AREA)
- Plasma Technology (AREA)
- Drying Of Semiconductors (AREA)
- Particle Accelerators (AREA)
- Electron Sources, Ion Sources (AREA)
Applications Claiming Priority (6)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| US201361765432P | 2013-02-15 | 2013-02-15 | |
| US61/765,432 | 2013-02-15 | ||
| US201361770251P | 2013-02-27 | 2013-02-27 | |
| US61/770,251 | 2013-02-27 | ||
| US13/934,620 US20140235069A1 (en) | 2013-02-15 | 2013-07-03 | Multi-plenum showerhead with temperature control |
| US13/934,620 | 2013-07-03 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201448026A TW201448026A (zh) | 2014-12-16 |
| TWI626685B true TWI626685B (zh) | 2018-06-11 |
Family
ID=51351505
Family Applications (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103104956A TWI626685B (zh) | 2013-02-15 | 2014-02-14 | 具有溫控之多充氣部噴淋頭 |
| TW107110096A TW201828361A (zh) | 2013-02-15 | 2014-02-14 | 具有溫控之多充氣部噴淋頭 |
Family Applications After (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW107110096A TW201828361A (zh) | 2013-02-15 | 2014-02-14 | 具有溫控之多充氣部噴淋頭 |
Country Status (5)
| Country | Link |
|---|---|
| US (1) | US20140235069A1 (https=) |
| JP (2) | JP2014220231A (https=) |
| KR (1) | KR20140103080A (https=) |
| SG (1) | SG2014011712A (https=) |
| TW (2) | TWI626685B (https=) |
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| US9447499B2 (en) | 2012-06-22 | 2016-09-20 | Novellus Systems, Inc. | Dual plenum, axi-symmetric showerhead with edge-to-center gas delivery |
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| JP2008066413A (ja) * | 2006-09-05 | 2008-03-21 | Tokyo Electron Ltd | シャワーヘッド構造及びこれを用いた処理装置 |
| JP2010084190A (ja) * | 2008-09-30 | 2010-04-15 | Sharp Corp | 気相成長装置および気相成長方法 |
| KR20120053003A (ko) * | 2009-07-22 | 2012-05-24 | 어플라이드 머티어리얼스, 인코포레이티드 | 할로우 캐소드 샤워헤드 |
| WO2011044451A2 (en) * | 2009-10-09 | 2011-04-14 | Applied Materials, Inc. | Multi-gas centrally cooled showerhead design |
| DE102011056589A1 (de) * | 2011-07-12 | 2013-01-17 | Aixtron Se | Gaseinlassorgan eines CVD-Reaktors |
| US9677176B2 (en) * | 2013-07-03 | 2017-06-13 | Novellus Systems, Inc. | Multi-plenum, dual-temperature showerhead |
-
2013
- 2013-07-03 US US13/934,620 patent/US20140235069A1/en not_active Abandoned
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2014
- 2014-02-07 JP JP2014021856A patent/JP2014220231A/ja active Pending
- 2014-02-10 SG SG2014011712A patent/SG2014011712A/en unknown
- 2014-02-14 TW TW103104956A patent/TWI626685B/zh active
- 2014-02-14 KR KR20140017451A patent/KR20140103080A/ko not_active Withdrawn
- 2014-02-14 TW TW107110096A patent/TW201828361A/zh unknown
-
2018
- 2018-05-01 JP JP2018087939A patent/JP2018160462A/ja active Pending
Patent Citations (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| US20030205328A1 (en) * | 2000-04-26 | 2003-11-06 | Kinnard David W. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| US6782843B2 (en) * | 2000-04-26 | 2004-08-31 | Axcelis Technologies, Inc. | Actively-cooled distribution plate for reducing reactive gas temperature in a plasma processing system |
| US20020017243A1 (en) * | 2000-06-15 | 2002-02-14 | Pyo Sung Gyu | Showerhead in chemical-enhanced chemical vapor deposition equipment |
| US20070193515A1 (en) * | 2006-02-17 | 2007-08-23 | Industry-University Cooperation Foundation Hanyang University | Apparatus for generating remote plasma |
Also Published As
| Publication number | Publication date |
|---|---|
| KR20140103080A (ko) | 2014-08-25 |
| US20140235069A1 (en) | 2014-08-21 |
| JP2014220231A (ja) | 2014-11-20 |
| SG2014011712A (en) | 2014-09-26 |
| JP2018160462A (ja) | 2018-10-11 |
| TW201448026A (zh) | 2014-12-16 |
| TW201828361A (zh) | 2018-08-01 |
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