TWI626503B - 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 - Google Patents
附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 Download PDFInfo
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- TWI626503B TWI626503B TW105103579A TW105103579A TWI626503B TW I626503 B TWI626503 B TW I626503B TW 105103579 A TW105103579 A TW 105103579A TW 105103579 A TW105103579 A TW 105103579A TW I626503 B TWI626503 B TW I626503B
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- Prior art keywords
- film
- substrate
- conductive film
- reflective
- multilayer
- Prior art date
Links
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- UFHFLCQGNIYNRP-UHFFFAOYSA-N Hydrogen Chemical compound [H][H] UFHFLCQGNIYNRP-UHFFFAOYSA-N 0.000 description 4
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 description 4
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Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/22—Masks or mask blanks for imaging by radiation of 100nm or shorter wavelength, e.g. X-ray masks, extreme ultraviolet [EUV] masks; Preparation thereof
- G03F1/24—Reflection masks; Preparation thereof
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B7/00—Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
- B32B7/02—Physical, chemical or physicochemical properties
- B32B7/023—Optical properties
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/38—Masks having auxiliary features, e.g. special coatings or marks for alignment or testing; Preparation thereof
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/7065—Defects, e.g. optical inspection of patterned layer for defects
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2307/00—Properties of the layers or laminate
- B32B2307/40—Properties of the layers or laminate having particular optical properties
- B32B2307/416—Reflective
-
- B—PERFORMING OPERATIONS; TRANSPORTING
- B32—LAYERED PRODUCTS
- B32B—LAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
- B32B2551/00—Optical elements
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Preparing Plates And Mask In Photomechanical Process (AREA)
- Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
- Physical Vapour Deposition (AREA)
Applications Claiming Priority (2)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| JP2013202494 | 2013-09-27 | ||
| JP2013-202494 | 2013-09-27 |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| TW201617728A TW201617728A (zh) | 2016-05-16 |
| TWI626503B true TWI626503B (zh) | 2018-06-11 |
Family
ID=52743232
Family Applications (3)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW105103579A TWI626503B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
| TW103133627A TWI530754B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
| TW107112766A TWI652542B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
Family Applications After (2)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| TW103133627A TWI530754B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
| TW107112766A TWI652542B (zh) | 2013-09-27 | 2014-09-26 | 附導電膜之基板、附多層反射膜之基板、反射型光罩基底及反射型光罩、與半導體裝置之製造方法 |
Country Status (6)
| Country | Link |
|---|---|
| US (3) | US9746762B2 (OSRAM) |
| JP (3) | JP5729847B2 (OSRAM) |
| KR (3) | KR102127907B1 (OSRAM) |
| SG (3) | SG11201509897WA (OSRAM) |
| TW (3) | TWI626503B (OSRAM) |
| WO (1) | WO2015046095A1 (OSRAM) |
Families Citing this family (24)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| JP6314019B2 (ja) * | 2014-03-31 | 2018-04-18 | ニッタ・ハース株式会社 | 半導体基板の研磨方法 |
| JP6069609B2 (ja) * | 2015-03-26 | 2017-02-01 | 株式会社リガク | 二重湾曲ｘ線集光素子およびその構成体、二重湾曲ｘ線分光素子およびその構成体の製造方法 |
| US10606166B2 (en) * | 2015-06-17 | 2020-03-31 | Hoya Corporation | Substrate with electrically conductive film, substrate with multilayer reflective film, reflective mask blank, reflective mask, and method of manufacturing semiconductor device |
| JP6873758B2 (ja) * | 2016-03-28 | 2021-05-19 | Hoya株式会社 | 基板の製造方法、多層反射膜付き基板の製造方法、マスクブランクの製造方法、及び転写用マスクの製造方法 |
| KR102393311B1 (ko) * | 2016-03-31 | 2022-05-02 | 호야 가부시키가이샤 | 반사형 마스크 블랭크의 제조 방법, 반사형 마스크 블랭크, 반사형 마스크의 제조 방법, 반사형 마스크, 및 반도체 장치의 제조 방법 |
| US9870612B2 (en) * | 2016-06-06 | 2018-01-16 | Taiwan Semiconductor Manufacturing Co., Ltd. | Method for repairing a mask |
| SG11201903409SA (en) * | 2016-10-21 | 2019-05-30 | Hoya Corp | Reflective mask blank, method of manufacturing reflective mask and method of manufacturing semiconductor device |
| WO2018135467A1 (ja) * | 2017-01-17 | 2018-07-26 | Hoya株式会社 | 反射型マスクブランク、反射型マスク及びその製造方法、並びに半導体装置の製造方法 |
| SG10201911903XA (en) * | 2017-02-27 | 2020-02-27 | Hoya Corp | Mask blank, method for manufacturing transfer mask, and method for manufacturing semiconductor device |
| SG11201913862WA (en) * | 2017-07-05 | 2020-01-30 | Toppan Printing Co Ltd | Reflective photomask blank and reflective photomask |
| US11531264B2 (en) * | 2018-05-25 | 2022-12-20 | Hoya Corporation | Reflective mask blank, reflective mask and manufacturing method thereof, and semiconductor device manufacturing method |
| WO2020095959A1 (ja) * | 2018-11-07 | 2020-05-14 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスクの製造方法、及び半導体装置の製造方法 |
| JP7250511B2 (ja) | 2018-12-27 | 2023-04-03 | Hoya株式会社 | 反射型マスクブランク、反射型マスク、及び半導体装置の製造方法 |
| DE102019100839B4 (de) * | 2019-01-14 | 2024-11-14 | Advanced Mask Technology Center Gmbh & Co. Kg | Fotomaskenanordnung mit reflektierender fotomaske und verfahren zum herstellen einer reflektierenden fotomaske |
| JP7263872B2 (ja) | 2019-03-25 | 2023-04-25 | 株式会社デンソー | ドリルの製造方法 |
| JP7350571B2 (ja) * | 2019-08-30 | 2023-09-26 | Hoya株式会社 | 導電膜付基板、反射型マスクブランク及び反射型マスク、並びに半導体デバイスの製造方法 |
| JP7271760B2 (ja) * | 2020-03-27 | 2023-05-11 | Hoya株式会社 | 多層反射膜付き基板、反射型マスクブランク、反射型マスク、及び半導体デバイスの製造方法 |
| KR102464780B1 (ko) * | 2020-09-02 | 2022-11-09 | 주식회사 에스앤에스텍 | 도전막을 구비하는 블랭크마스크 및 이를 이용하여 제작된 포토마스크 |
| JP7420027B2 (ja) * | 2020-09-10 | 2024-01-23 | 信越化学工業株式会社 | Ｅｕｖマスクブランク用多層反射膜付き基板、その製造方法及びｅｕｖマスクブランク |
| US20220137500A1 (en) * | 2020-10-30 | 2022-05-05 | AGC Inc. | Glass substrate for euvl, and mask blank for euvl |
| KR20220058424A (ko) * | 2020-10-30 | 2022-05-09 | 에이지씨 가부시키가이샤 | Euvl용 유리 기판, 및 euvl용 마스크 블랭크 |
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|---|---|
| WO2015046095A1 (ja) | 2015-04-02 |
| TWI652542B (zh) | 2019-03-01 |
| TW201516556A (zh) | 2015-05-01 |
| KR102107799B1 (ko) | 2020-05-07 |
| TW201826009A (zh) | 2018-07-16 |
| US10527927B2 (en) | 2020-01-07 |
| KR20200047800A (ko) | 2020-05-07 |
| JP5729847B2 (ja) | 2015-06-03 |
| KR20170120718A (ko) | 2017-10-31 |
| US9746762B2 (en) | 2017-08-29 |
| SG10201911502WA (en) | 2020-02-27 |
| KR102127907B1 (ko) | 2020-06-29 |
| US20170315439A1 (en) | 2017-11-02 |
| KR20160061913A (ko) | 2016-06-01 |
| JP6630005B2 (ja) | 2020-01-15 |
| JP6465720B2 (ja) | 2019-02-06 |
| US20160124298A1 (en) | 2016-05-05 |
| TW201617728A (zh) | 2016-05-16 |
| US20190155141A1 (en) | 2019-05-23 |
| JP2015156034A (ja) | 2015-08-27 |
| TWI530754B (zh) | 2016-04-21 |
| SG11201509897WA (en) | 2016-04-28 |
| US10209614B2 (en) | 2019-02-19 |
| KR101877896B1 (ko) | 2018-07-12 |
| JP2019056939A (ja) | 2019-04-11 |
| JP2015088742A (ja) | 2015-05-07 |
| SG10201805079YA (en) | 2018-07-30 |
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