TWI623066B - 半導體封裝和製造其之方法 - Google Patents

半導體封裝和製造其之方法 Download PDF

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TWI623066B
TWI623066B TW103133478A TW103133478A TWI623066B TW I623066 B TWI623066 B TW I623066B TW 103133478 A TW103133478 A TW 103133478A TW 103133478 A TW103133478 A TW 103133478A TW I623066 B TWI623066 B TW I623066B
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Taiwan
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semiconductor wafer
semiconductor
wafer
disposed
package
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TW103133478A
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TW201541568A (zh
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金泰勳
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愛思開海力士有限公司
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Abstract

一種半導體封裝包含一其上設置一基板墊的封裝基板、一設置在該封裝基板之上的結構、一利用一具有其中設置一磁性材料層的黏著構件而被設置在該結構之上的半導體晶片、一設置在該半導體晶片的一頂表面上的晶片墊、以及一耦接該基板墊以及該晶片墊的接合導線。

Description

半導體封裝和製造其之方法
本揭露內容的實施例有關於一種半導體封裝，並且更具體而言有關於一種半導體封裝以及一種製造其之方法。
相關申請案的交互參照
本申請案主張2014年4月18日申請的韓國專利申請案號10-2014-0046992的優先權，該專利申請案以其整體被納入作為參考。
近來，電子裝置已經在尺寸上被縮減並且在效能上加以改良，而且對於行動產品的需求已經增大。因此，對於超小及大容量的半導體封裝的需求也已經增大。用於增加一半導體裝置的儲存容量之技術可包含提高一半導體晶片的集積程度以及在一半導體封裝中安裝複數個半導體晶片。在半導體封裝中安裝複數個半導體晶片藉由修改一封裝製程，以使得增加該半導體裝置的儲存容量成為可能的。因此，半導體產業利用一種包含複數個半導體晶片之多晶片的封裝來增加該半導體裝置的儲存容量。
用於形成一種多晶片的封裝之技術可包含安裝複數個設置在一水平的方向上的晶片以及安裝複數個設置在一垂直的方向上的晶片。由於需要在尺寸上被縮減的電子裝置的特徵之緣故，一種包含複數個被封 裝於其中而且在一方向上堆疊的半導體晶片的堆疊類型之多晶片的封裝可被利用。該堆疊類型之多晶片的封裝藉由在一垂直的方向上堆疊複數個半導體晶片來增加在一有限的空間內的密度。
各種的實施例針對於半導體封裝及製造其之方法。
在某些實施例中，一種半導體封裝可包含：一其上設置一基板墊的封裝基板；一設置在該封裝基板之上的結構；一利用一黏著構件以附接至該結構的半導體晶片，該黏著構件具有一被設置於其中的磁性材料層；一設置在該半導體晶片的一頂表面上的晶片墊；以及一耦接該基板墊以及該晶片墊的接合導線。
根據另外的實施例，一種用於製造一半導體封裝之方法可包含：製備一其上設置一基板墊的封裝基板；在該封裝基板之上設置一下方的結構；製備一其上設置一晶片墊的半導體晶片，該晶片墊被設置在該半導體晶片的一邊緣部分的頂表面上；利用一設置在該半導體晶片以及該下方的結構之間的黏著構件以在該下方的結構之上設置該半導體晶片，使得該半導體晶片具有一其中該邊緣部分係從該下方的結構的一側突出的突出結構，該黏著構件具有一被設置於其中的磁性材料層；施加一磁場至該磁性材料層以便於支承該半導體晶片；以及在該半導體晶片藉由該磁場加以支承時，形成一接合導線以耦接該基板墊以及該晶片墊。
100‧‧‧半導體封裝
110‧‧‧封裝基板
115‧‧‧基板墊
120‧‧‧第一半導體晶片
125‧‧‧第一黏著構件
130‧‧‧第二半導體晶片
135‧‧‧第二黏著構件
135a‧‧‧黏著構件
135b‧‧‧黏著構件
135c‧‧‧黏著構件
137‧‧‧磁性材料層
137a‧‧‧磁性材料層
137b‧‧‧磁性材料層
137c‧‧‧磁性材料層
140‧‧‧晶片墊
145‧‧‧接合導線
150‧‧‧邊緣部分
200‧‧‧半導體封裝
210‧‧‧封裝基板
215‧‧‧基板墊
220‧‧‧第一半導體晶片
225‧‧‧第一黏著構件
230‧‧‧第二半導體晶片
230a‧‧‧頂表面
230b‧‧‧背側表面
235‧‧‧第二黏著構件
237‧‧‧磁性材料層
240‧‧‧晶片墊
245‧‧‧接合導線
250‧‧‧邊緣部分
300‧‧‧磁力產生器
305‧‧‧毛細管
310‧‧‧導線球
315‧‧‧導線
320‧‧‧引線接合器
410‧‧‧封裝基板
415‧‧‧基板墊
420‧‧‧第一半導體晶片
425‧‧‧第一黏著構件
430‧‧‧第二半導體晶片
430a‧‧‧頂表面
430b‧‧‧背側表面
435‧‧‧第二黏著構件
437‧‧‧第二極性板
440‧‧‧晶片墊
450‧‧‧邊緣部分/末端部分
500‧‧‧第一極性板
600‧‧‧半導體封裝
610‧‧‧封裝基板
615‧‧‧基板墊
620‧‧‧第一半導體晶片
625‧‧‧第一黏著構件
630‧‧‧第二半導體晶片
630a‧‧‧頂表面
630b‧‧‧背側表面
635‧‧‧第二黏著構件
640‧‧‧晶片墊
645‧‧‧金屬導線
650‧‧‧空間
655‧‧‧阻風板
660‧‧‧空氣注入裝置
700‧‧‧第一控制器
705‧‧‧電源供應單元
710‧‧‧電磁鐵控制單元
720‧‧‧第二控制器
730‧‧‧引線接合器驅動單元
740‧‧‧引線接合器控制單元
750‧‧‧控制器
1110‧‧‧封裝基板
1115‧‧‧墊
1120‧‧‧第一半導體晶片
1125‧‧‧第一黏著構件
1130‧‧‧第二半導體晶片
1135‧‧‧第二黏著構件
1140‧‧‧晶片墊
1145‧‧‧導線球
1150‧‧‧毛細管
1710‧‧‧電子系統
1711‧‧‧控制器
1712‧‧‧輸入/輸出單元
1713‧‧‧記憶體
1714‧‧‧介面
1715‧‧‧匯流排
1800‧‧‧記憶卡
1810‧‧‧記憶體
1820‧‧‧記憶體控制器
1830‧‧‧主機
A‧‧‧格子圖案
F1‧‧‧力
M1‧‧‧第一方向
M2‧‧‧第二方向
M3‧‧‧排斥力
M4‧‧‧排斥力
圖1是根據本揭露內容的一實施例的一種半導體封裝之立體圖。
圖2至4係展示根據一實施例的一設置在一黏著構件中的磁性材料層。
圖5係描繪一種引線接合的製程。
圖6至11係描繪根據一實施例的一種用於製造一半導體封裝之製程。
圖12及13係描繪根據另一實施例的一種用於製造一半導體封裝之製程。
圖14及15係描繪根據另一實施例的一種用於製造一半導體封裝之製程。
圖16是描繪根據一實施例的一種包含一封裝的電子系統之方塊圖。
圖17是描繪根據一實施例的另一種包含一封裝的電子系統之方塊圖。
本揭露內容的實施例將會在以下參考所附的圖式來加以詳細地描述。應注意到的是，該圖式並非精確按照比例的，並且可能為了描述的便利性及清楚起見而在線的厚度或是構件的尺寸上被誇大。再者，如同在此所用的術語藉由考量該些實施例的功能來加以定義的，並且可能會隨著使用者或操作者的習慣或意圖而變化。因此，該些術語應該根據在此所闡述的整體揭露內容來加以解釋。
圖1是根據本揭露內容的一實施例的一種半導體封裝之立體圖。該半導體封裝100包含一封裝基板110、複數個基板墊115、第一及第二堆疊的半導體晶片120及130、第一及第二黏著構件125及135、複數個晶片墊140、以及一接合導線145。
該第二黏著構件135被設置在該第一及第二半導體晶片120及130之間，以便於將該第一半導體晶片120接合至該第二半導體晶片130。 該第二黏著構件135包含一被設置於其中的磁性材料層137。
該封裝基板110可包含一印刷電路板(PCB)或是撓性的PCB，並且可包含被安裝於其上的半導體晶片或是積體電路晶片。該封裝基板110包含一正面側以及一面對該正面側的背面側。儘管未描繪在圖1中，但是該封裝基板110可包含被配置於其中的電路佈線圖案。
該複數個基板墊115被設置在該封裝基板110的正面側上，以將該第一及第二半導體晶片120及130電耦接至該封裝基板110。該些基板墊115可以透過配置在該封裝基板110中的電路佈線圖案來發送電性信號至該封裝基板110的背面側。該封裝基板110可包含用於耦接該些電路佈線圖案的例如是耦接貫孔之耦接佈線(未繪出)。
描繪在圖1中的基板墊115的數目是舉例說明的，並且實施例並不限於此。在另一實施例中，基板墊115的數目可以根據該半導體封裝的使用來加以調整。該基板墊115可包含一種導電材料，例如是銅(Cu)、鎳(Ni)、金(Au)或類似者。
該第一及第二半導體晶片120及130可被配置在該封裝基板110之上。在一實施例中，該第一及第二半導體晶片120及130可以用該第一半導體晶片120利用該第一黏著構件125而附接在該封裝基板110之上，並且該第二半導體晶片130利用該第二黏著構件135而附接在該第一半導體晶片120之上的此種方式來加以堆疊。儘管未描繪在圖1中，但是額外的半導體晶片可以堆疊在該第二半導體晶片130之上。
在本實施例中，設置在該第二半導體晶片130之下的結構只有該第一半導體晶片120而已，但是實施例並不限於此。在另一實施例中， 設置在該第二半導體晶片130之下的結構可包含一虛擬晶片、或是一例如為阻焊劑層的絕緣層。在又一實施例中，設置在該第二半導體晶片130之下的結構可包含兩個或多個半導體晶片。因此，在某些實施例中，兩個或多個半導體晶片、兩個或多個虛擬晶片、或是兩個或多個絕緣層可以獨立地堆疊、或是混合的堆疊。
該第一及第二半導體晶片120及130可以是沿著該封裝基板110的一第一方向堆疊的。在一實施例中，該第一及第二半導體晶片120及130可以用其邊緣部分是彼此偏離的此種方式來加以配置。因此，設置在該第一半導體晶片120之上的第二半導體晶片130的邊緣部分150並不和該第一半導體晶片120重疊，而是從該第一半導體晶片120的邊緣部分在一橫向的方向上突出。換言之，該第二半導體晶片130可加以堆疊，以具有一在該第一半導體晶片120之上的突出結構。
該複數個晶片墊140係被設置在該第二半導體晶片130上，以耦接該封裝基板110以及該第二半導體晶片130。配置在該第二半導體晶片130上的晶片墊140可被設置在具有該突出結構的第二半導體晶片130的邊緣部分150上。該第一及第二半導體晶片120及130可包含矽(Si)。描繪在圖1中的晶片墊140的數目及配置並不限於此。在另一實施例中，該些晶片墊140的數目及配置可以根據該第二半導體晶片130的類型來加以改變。
該接合導線145係將該晶片墊140耦接至該基板墊115。因此，該第二半導體晶片130可以經由該晶片墊140、該接合導線145以及該基板墊115來電耦接至該封裝基板110。該接合導線145可包含一種例如是銅(Cu)、金(Au)、銀(Ag)或類似者的導電金屬。
如上所述，該第一半導體晶片120以及該封裝基板110可以利用該第一黏著構件125來彼此附接，並且該第一半導體晶片120以及該第二半導體晶片130可以利用該第二黏著構件135來彼此附接。該第一及第二黏著構件125及135的任一個可包含一例如是晶粒附接膜(DAF)的黏著帶。該第二黏著構件135可包含被設置於其中的磁性材料層137。
該磁性材料層137可包含一種磁性材料，例如一種鐵磁性(ferromagnetic)材料、一種亞鐵磁(ferrimagnetic)材料、石墨烯、或類似者。該鐵磁性材料可包含鎳(Ni)、鈷(Co)、鋼(Fe)、或類似者，並且該亞鐵磁材料可包含磁鐵礦(magnetite)、鐵氧體(ferrite)、或類似者。該磁性材料層137可以是由一種並非持續產生磁力、而是只有在曝露到一磁場時才產生一磁力之材料所形成的，其中該磁場可以在一用於產生一磁力的磁力產生器被導通時加以產生。具有被設置於其中的磁性材料層137之第二黏著構件135係被設置在該第二半導體晶片130的背面側上，其包含具有該突出結構的第二半導體晶片130的邊緣部分150的背面側。
當設置在該第二黏著構件135中時，該磁性材料層137可具有各種的形狀，其中的某些形狀將會參考圖2至4來加以描述。
圖2係展示一具有設置在一黏著構件135a之內的一磁性材料層137a的實施例。該磁性材料層137a係具有一格子圖案A，其中複數個由一種磁性材料所形成的線狀圖案係被配置以彼此交叉。該格子圖案A可包含一或多個方形、矩形或是多邊形的形狀。
圖3係展示一具有設置在一黏著構件135b之內的一磁性材料層137b的實施例。該磁性材料層137b僅被設置在該黏著構件135b的一 或多個邊緣處。該磁性材料層137b可具有一靠近或是沿著該黏著構件135b的邊緣被設置的線狀邊界。
圖4係展示一具有設置在該黏著構件135c之內的一磁性材料層137c的實施例。該磁性材料層137c具有一平板形狀。
圖5描繪一種在一毛細管被移動時，將一接合導線的兩個末端分別接合至一半導體晶片的一晶片墊以及一封裝基板的一基板墊之引線接合的製程的一部分。在圖5中，第一及第二堆疊的半導體晶片1120及1130被設置在一封裝基板1110上。一墊1115被設置在該封裝基板1110上。該第一半導體晶片1120透過一第一黏著構件1125而附接在該封裝基板1110之上，並且該第二半導體晶片1130透過一第二黏著構件1135而附接在該第一半導體晶片1120之上。
該第一及第二黏著構件1125及1135包含一黏著帶，例如是一晶粒附接膜(DAF)。該第一黏著構件1125或是該第二黏著構件1130都沒有一磁性材料層於其中。
如同在圖5中所繪，一導線球1145形成在一毛細管1150的一末端，以便於將一接合導線耦接至一設置在一第二半導體晶片1130上的晶片墊1140，並且一力F1透過該毛細管1150而被產生並且施加以將該導線球1145壓到該晶片墊1140，以便於將該導線球1145接合至該晶片墊1140。
當該力F1透過該導線球1145被施加至該晶片墊1140時，該第二半導體晶片1130朝向一封裝基板1110彎曲。當施加至該晶片墊1140的力F1被移除時，朝向該封裝基板1110彎曲的第二半導體晶片1130係傾向恢復至原始的狀態。然而，當該第二半導體晶片1130在恢復至原始的狀 態之前彎曲超過一恢復的臨界值時，一裂縫可能會產生在該第二半導體晶片1130中。再者，當該第二半導體晶片1130恢復時，該接合導線可能會彎曲或切斷。
在另一方面，根據一實施例的一種例如是在圖1中所示的封裝100之半導體封裝利用具有被設置於其中的磁性材料層137之第二黏著構件135，以實質避免該第二半導體晶片130在該引線接合的製程期間彎曲。明確地說，當一用於產生一磁力的磁力產生器被導通時，該磁性材料層137產生一磁力，並且在具有被設置於其中的磁性材料層137之第二黏著構件135以及該磁力產生器之間的吸引力可被用來實質避免該第二半導體晶片130彎曲超過該臨界值。
圖6至11是用於解釋根據各種實施例的一種用於製造一半導體封裝之製程的圖。圖9描繪根據一實施例的一引線接合的裝置。
參照圖6及7，第一及第二半導體晶片220及230堆疊在一封裝基板210之上。在一實施例中，該封裝基板210可包含一PCB或是撓性的PCB。儘管未描繪在圖式中，該封裝基板210可包含配置於其中的電路佈線圖案，以便於在該半導體封裝中的半導體晶片以及外部之間發送電性信號。複數個基板墊215形成在該封裝基板210的一頂表面上，以便於將該封裝基板210電耦接至該第一及第二半導體晶片220及230。
該第一半導體晶片220利用一第一黏著構件225而附接在該封裝基板210之上，並且該第二半導體晶片230利用一形成在該第二半導體晶片230的一背側表面230b上的第二黏著構件235而附接在該第一半導體晶片220之上。該第二半導體晶片230具有一並不和設置在該第二半導體晶 片230之下的第一半導體晶片220重疊之邊緣部分250，而是從該第一半導體晶片220的一邊緣部分在一橫向的方向上突出。換言之，該第二半導體晶片230可以在具有一突出結構下被設置在該第一半導體晶片220之上。
儘管未描繪在圖6中，額外的半導體晶片可以堆疊在該第二半導體晶片230之上。在本實施例中，設置在該第二半導體晶片230之下的結構僅包含該第一半導體晶片220而已，但是實施例並不限於此。在另一實施例中，設置在該第二半導體晶片230之下的結構可包含一虛擬晶片、或是一例如阻焊劑層的絕緣層。在一實施例中，該第一黏著構件225可包含一例如是一DAF的黏著帶、或是一黏著劑。
參照圖7，附接在該第二半導體晶片230的背側表面230b上的第二黏著構件235包含一例如是一DAF的黏著帶。該第二黏著構件235包含一被設置於其中的磁性材料層237。被設置在該第二黏著構件235中的磁性材料層237可包含一種會在一用於產生一磁力的磁力產生器運作時起反應的材料。
在一實施例中，該磁性材料層237可包含一種磁性材料，例如是一種鐵磁性材料、一種亞鐵磁材料、石墨烯、或類似者。該鐵磁性材料可包含鎳(Ni)、鈷(Co)、鋼(Fe)、或類似者。該亞鐵磁材料可包含磁鐵礦、鐵氧體、或類似者。
該磁性材料層237可以用各種的圖案加以形成，例如是那些針對於圖2至4中的磁性材料層137所描述者。
複數個晶片墊240形成在該第二半導體晶片230的一頂表面230a上，以用於將該封裝基板210耦接至該第二半導體晶片230。設置在該 第二半導體晶片230上的晶片墊240可被設置在具有該突出結構的第二半導體晶片230的邊緣部分250上。在圖7中描繪的晶片墊240的數目並不限於此。在另一實施例中，晶片墊240的數目可以根據該第一及第二半導體晶片220及230的類型來加以調整。
參照圖8及9，一種包含一磁力產生器300以及一引線接合器320之引線接合的裝置被設置在該半導體封裝200之處。該引線接合器320可被設置在該半導體封裝200之上。該磁力產生器300被移動以接觸到該第二半導體晶片230的頂表面230a。該磁力產生器300被設置在具有該突出結構的第二半導體晶片230的邊緣部分250上。
該磁力產生器300可包含一電磁鐵(未繪出)。該電磁鐵可以藉由將一導體纏繞一圓柱形的線軸(bobbin)以形成一線圈來加以形成。一電流可以通過該電磁鐵以產生一磁力。
該磁力產生器300的操作可藉由一包含一電源供應單元705以及一電磁鐵控制單元710的第一控制器700來加以控制。該電源供應單元705控制一電源來通過一電流至該磁力產生器300、或是阻擋該電流。該電磁鐵控制單元710控制流過該磁力產生器300的電磁鐵的電流，並且藉此控制該磁力的強度。
該引線接合器320可包含一具有一空間設置於其中的毛細管305。透過該毛細管305的空間，一導線315可加以供應。儘管未描繪在圖9中，該毛細管305可以藉由一驅動單元而在上下的方向、或是左右的方向上加以移動。該引線接合器320的操作可藉由一包含一引線接合器驅動單元730以及一引線接合器控制單元740的第二控制器720來加以控制。該 引線接合器驅動單元730控制該驅動單元以移動該毛細管305。該引線接合器控制單元740在該導線315的一末端產生一電火花(spark)以便於形成一導線球310，並且供應該導線315。
一控制器750控制該第一及第二控制器700及720，以便於控制該整個引線接合的製程。
參照圖10，圖9的電源供應單元705提供一電流至該磁力產生器300之內的電磁鐵，以產生一第一磁力。該第一磁力透過在接觸該第二半導體晶片230的邊緣部分250的頂表面230a的磁力產生器300以及設置在該第二黏著構件235中的磁性材料層237之間的互動而被產生在一第一方向M1上。該第一方向M1指出一包含該第二半導體晶片230的半導體封裝200被設置所在的方向。
當該磁力產生器300在該第一方向M1上產生該第一磁力時，設置在附接於該第二半導體晶片230的背側表面230b上的第二黏著構件235中的磁性材料層237響應地產生一第二磁力。該磁性材料層237在一第二方向M2上，亦即朝向該磁力產生器300產生該第二磁力。儘管該磁性材料層237產生朝向該磁力產生器300的第二磁力，但是因為該磁力產生器300是接觸該第二半導體晶片230的邊緣部分250，因此該第二半導體晶片230在該引線接合的製程期間並未向上彎曲，而是實質固定在一水平的方向上。
當該第二半導體晶片230藉由該第二磁力支承時，該引線接合器320的毛細管305被降低直到其接觸該晶片墊240為止。為了附接該導線球310至該晶片墊240，一預設的力透過該毛細管305而被施加，以將該 導線球310壓到該晶片墊215。根據該實施例的半導體封裝200利用包含該磁性材料層237的第二黏著構件235，並且因此在該磁力產生器300以及該第二黏著構件235之間產生一吸引力。因此，具有該突出結構的第二半導體晶片230的邊緣部分250可以受到支承，並且避免實質向下的彎曲。因此，當該第二半導體晶片230彎曲及恢復時，例如是裂縫的損壞可以實質避免發生。
如同在圖11中所繪，接觸該晶片墊240的毛細管305接著被舉起而且在一橫向的方向上移動，並且接著朝向一基板墊215降低。最初，該毛細管305接觸該晶片墊240並且接著被舉起。在此製程期間，一環形可加以形成。當該毛細管305被降低且接觸該基板墊215時，一接合導線245係加以形成。該毛細管305施加一預設的力以將該接合導線245附接至該基板墊215，因而該晶片墊240以及該基板墊215透過該接合導線245來彼此耦接。
接著，該毛細管305被舉起，並且該接合導線245被切斷以完成該引線接合的製程。當該引線接合的製程完成時，該磁力產生器300和該第二半導體晶片230的頂表面230a分開。
在一實施例中，該引線接合的製程在該磁力產生器300被設置於相隔該第二半導體晶片230的頂表面230a一預設的高度下加以執行。當一電流被供應到該磁力產生器300之內的電磁鐵以產生一磁力並且該磁力產生器300是和該第二半導體晶片230分開時，設置在該第二黏著構件235中的磁性材料層237產生一朝向該磁力產生器300的磁力，亦即一吸引力。該產生的吸引力可以避免該第二半導體晶片230在該引線接合的製程 期間實質的移動。
圖12及13是用於解釋根據另一實施例的一種用於製造一半導體封裝之方法的圖。
圖13展示第一及第二半導體晶片420及430堆疊在一封裝基板410之上。該封裝基板410可包含一PCB或是撓性的PCB。複數個基板墊415形成在該封裝基板410的一正面側的表面上，以便於將該封裝基板410電耦接至該第一及第二半導體晶片420及430。
一第一極性板500被設置在該封裝基板410的一背側表面上。該第一極性板500可以是定義為由一種當作為一陽極(+)或陰極(-)的導體所形成的一板。
該第一半導體晶片420利用一第一黏著構件425而附接在該封裝基板410之上，並且該第二半導體晶片430利用一附接在該第二半導體晶片430的背側表面430b上的第二黏著構件435而附接在該第一半導體晶片420之上。複數個晶片墊440形成在該第二半導體晶片430的一頂表面430a上。該些晶片墊440可被設置在具有一突出結構的第二半導體晶片430的一邊緣部分450上。儘管未描繪在圖式中，但是額外的半導體晶片可以堆疊在該第二半導體晶片430之上，且/或可被設置在該第一及第二半導體晶片420及430之間。該第一黏著構件425可包含一例如是一DAF的黏著帶、或是一黏著劑。
如同在圖12中所示，附接在該第二半導體晶片430的背側表面430b上的第二黏著構件435可包含一例如是一DAF的黏著帶。該第二黏著構件435可具有一被設置於其中的第二極性板437。該第二極性板437 可被定義為由一種當作為一陽極(+)或陰極(-)的導體所形成的一板。該第二極性板437可具有和該第一極性板500相同的極性。例如，當該第一極性板500具有一正電位(+)時，該第二極性板437可具有一正電位(+)，並且當該第一極性板500具有一負(-)電位時，該第二極性板437可具有一負(-)電位。
當具有相同的極性的第一及第二極性板500及437分別被設置在該封裝基板410的背側表面上以及在該第二半導體晶片230的第二黏著構件435中，並且被配置以彼此面對時，排斥力M3及M4被產生在該第一及第二極性板500及437之間。具有該突出結構的第二半導體晶片430的末端部分450藉由產生在該第一及第二極性板500及437之間的排斥力M3及M44來加以支承。因此，當該引線接合器320的毛細管305在該引線接合的製程期間施加一預設的力以將該導線球310附接至該晶片墊440時，該第二半導體晶片430可以避免實質的彎曲。當該引線接合的製程完成時，被設置在該封裝基板410的背側表面上的第一極性板500被移除。
圖14及15是用於解釋根據另一實施例的一種用於製造一半導體封裝之方法的圖。
參照圖14及15，該半導體封裝600包含堆疊在一封裝基板610之上的第一及第二半導體晶片620及630。複數個基板墊615形成在該封裝基板610的一頂表面上，以便於將該封裝基板610電耦接至該第一及第二半導體晶片620及630。
該第一半導體晶片620可以利用一第一黏著構件625而附接在該封裝基板610之上，並且該第二半導體晶片630可以利用一形成在該第二半導體晶片630的一背側表面630b上的第二黏著構件635而附接在該第 一半導體晶片620之上。複數個晶片墊640形成在該第二半導體晶片630的一頂表面630a上。該些晶片墊640可被設置在具有一突出結構的第二半導體晶片630的一邊緣部分上。儘管未描繪在圖式中，額外的半導體晶片可以堆疊在該第二半導體晶片630之上，且/或可被設置在該第一及第二半導體晶片620及630之間。該第一及第二黏著構件625及635的任一個可包含一例如是一DAF的黏著帶、或是一黏著劑。
在該封裝基板610之上，阻風板(air dam)655可被設置。該些阻風板655可被設置在該第一及第二半導體晶片620及640之堆疊的結構的左側及右側的封裝基板610之上，其中該堆疊的結構插置於其間。
接著，一空氣注入裝置660以及該引線接合器320的毛細管305被設置在該半導體封裝600之上。空氣係從該空氣注入裝置660朝向該第二半導體晶片630加以供應。從該空氣注入裝置660供應的空氣被注入到一位在具有該突出結構的第二半導體晶片630的邊緣部分之下的空間650內。接著，當該空氣藉由所設置的阻風板655而被維持於位在該第二半導體晶片630的邊緣部分之下的該空間650內，而其中該第一及第二半導體晶片620及630之堆疊的結構插置於其間時，該第二半導體晶片630藉由該空氣加以支承，就像是一支承結構存在於該第二半導體晶片630之下。
上述利用該毛細管305的引線接合的方法被用來形成一金屬導線645以用於將一晶片墊640耦接至一基板墊615。當該空氣在該引線接合的製程被執行時是持續地被注入到位在具有該突出結構的第二半導體晶片630的邊緣部分之下的空間650內時，該第二半導體晶片630可以避免因為由該毛細管305所施加的力而實質彎曲。
當該引線接合的製程完成時，該空氣注入裝置660的空氣注入製程係停止。該些阻風板645可以在該引線接合的製程之後加以移除。
上述的封裝可以應用至各種的電子系統。
參照圖16，根據一實施例的封裝可以應用至一電子系統1710。該電子系統1710可包含一控制器1711、一輸入/輸出單元1712以及一記憶體1713。該控制器1711、該輸入/輸出單元1712以及該記憶體1713可以透過一匯流排1715來彼此耦接，該匯流排1715係提供資料發送所透過的一路徑。
例如，該控制器1711可包含至少一微處理器、至少一數位信號處理器、至少一微控制器、以及能夠執行和這些構件相同功能的邏輯裝置中的至少任何一種。該控制器1711以及該記憶體1713中的至少一個可包含根據本揭露內容的實施例的封裝中的至少任何一種。該輸入/輸出單元1712可包含從一小型鍵盤、一鍵盤、一顯示裝置、一觸控螢幕、等等中選出的至少一個。該記憶體1713是一用於儲存資料的裝置。該記憶體1713可儲存將藉由該控制器1711與類似者執行的資料及/或命令。
該記憶體1713可包含一例如是DRAM的易失性(volatile)記憶體裝置及/或一例如是快閃記憶體的非易失性(nonvolatile)記憶體裝置。例如，一快閃記憶體可被安裝到一例如是行動終端或是桌上型電腦的資訊處理系統。該快閃記憶體可以構成一固態硬碟(SSD)。在此例中，該電子系統1710可以穩定地儲存大量的資料在一快閃記憶體系統中。
該電子系統1710可進一步包含一適合用於發送至一通訊網路以及從該通訊網路接收資料的介面1714。該介面1714可以是一有線或是 無線的類型。例如，該介面1714可包含一天線、或是一有線或無線的收發器。
該電子系統1710可被實現為一行動系統、一個人電腦、一工業電腦、或是一執行各式各樣功能的邏輯系統。例如，該行動系統可以是一個人數位助理(PDA)、一可攜式電腦、一平板電腦、一行動電話、一智慧型手機、一無線電話、一膝上型電腦、一記憶卡、一數位音樂系統、以及一資訊發送/接收系統中的任一個。
在一其中該電子系統1710是一能夠執行無線通訊的設備之實施例中，該電子系統1710可被用在一通訊系統中，例如是一採用CDMA(分碼多重存取)、GSM(全球行動通訊系統)、NADC(北美數位行動電話)、E-TDMA(強化的分時多重存取)、WCDMA(寬頻分碼多重存取)、CDMA2000、LTE(長期演進技術)，以及Wibro(無線寬頻網際網路)中的一或多個之系統。
參照圖17，根據該些實施例的封裝可以被提供成具有一記憶卡1800的形式。例如，該記憶卡1800可包含一例如是非易失性記憶體裝置的記憶體1810以及一記憶體控制器1820。該記憶體1810以及該記憶體控制器1820可以儲存資料、或是讀取所儲存的資料。
該記憶體1810可包含本揭露內容的實施例的封裝技術所應用到的非易失性記憶體裝置中之至少任何一種。該記憶體控制器1820可以響應於來自一主機1830的一讀取/寫入請求以控制該記憶體1810，使得所儲存的資料係被讀出、或是資料係被儲存。
儘管本揭露內容的較佳實施例已經為了舉例說明之目的而被揭露，但是熟習此項技術者將會體認到各種的修改、增加及替代是可能 的，而不脫離如同在所附的申請專利範圍中界定的本揭露內容的範疇及精神。

Claims (20)

  1. 一種半導體封裝，其包括：一其上設置一基板墊的封裝基板；一設置在該封裝基板之上的結構；一利用一黏著構件以附接至該結構的半導體晶片，該黏著構件具有一被設置於其中的磁性材料層；一設置在該半導體晶片的一頂表面上的晶片墊；以及一耦接該基板墊以及該晶片墊的接合導線。
  2. 如申請專利範圍第1項之半導體封裝，其中該半導體晶片具有一突出結構，其中該半導體晶片的一邊緣部分遠離該結構的一側而突出，並且該晶片墊被設置在該半導體晶片的該突出的邊緣部分上。
  3. 如申請專利範圍第2項之半導體封裝，其中該黏著構件被設置在該半導體晶片的一背側表面上，該背側表面和該半導體晶片的該頂表面相對的。
  4. 如申請專利範圍第1項之半導體封裝，其中該結構包括另一半導體晶片。
  5. 如申請專利範圍第1項之半導體封裝，其中該磁性材料層包括一種鐵磁性材料、一種亞鐵磁材料以及石墨烯中的一或多種。
  6. 如申請專利範圍第1項之半導體封裝，其中該黏著構件包含一黏著帶。
  7. 如申請專利範圍第1項之半導體封裝，其中該磁性材料層包含一格子圖案，其中複數個線狀圖案被配置以彼此交叉。
  8. 如申請專利範圍第1項之半導體封裝，其中該磁性材料層包含一被設置成靠近該黏著構件的複數個邊緣之線狀邊界。
  9. 如申請專利範圍第1項之半導體封裝，其中該磁性材料層包含一具有一平板形狀的結構。
  10. 一種用於製造一半導體封裝之方法，該方法包括：製備一其上設置一基板墊的封裝基板；在該封裝基板之上設置一下方的結構；製備一其上設置一晶片墊的半導體晶片，該晶片墊被設置在該半導體晶片的一邊緣部分的一頂表面上；利用一設置在該半導體晶片以及該下方的結構之間的黏著構件以在該下方的結構之上設置該半導體晶片，使得該半導體晶片具有一其中該邊緣部分係從該下方的結構的一側突出的突出結構，該黏著構件具有一被設置於其中的磁性材料層；施加一磁場至該磁性材料層以便於支承該半導體晶片；以及在該半導體晶片藉由該磁場加以支承時，形成一接合導線以耦接該基板墊以及該晶片墊。
  11. 如申請專利範圍第10項之方法，其中該下方的結構包括另一半導體晶片。
  12. 如申請專利範圍第10項之方法，其中該黏著構件被設置在該半導體晶片的一背側表面上，該背側表面和該頂表面相對的。
  13. 如申請專利範圍第10項之方法，其中該磁性材料層包括一種鐵磁性材料、一種亞鐵磁材料以及石墨烯中的一或多種。
  14. 如申請專利範圍第10項之方法，其中該磁性材料層以一格子形狀加以形成，其中複數個由一種磁性材料所形成的線狀圖案被配置以彼此交叉。
  15. 如申請專利範圍第10項之方法，其中該磁性材料層包含一被設置成靠近該黏著構件的複數個邊緣的線狀邊界。
  16. 如申請專利範圍第10項之方法，其中該磁性材料層包含一具有一表面結構的平板形狀。
  17. 如申請專利範圍第10項之方法，其中該半導體晶片的支承包括：使得一磁力產生器接觸該半導體晶片的一頂表面；供應一電流至該磁力產生器以產生該磁場；以及利用一透過在藉由該磁力產生器所產生的該磁場以及在該黏著構件之內的該磁性材料層之間的互動所產生的磁力，來支承該半導體晶片。
  18. 如申請專利範圍第17項之方法，其中該磁力產生器接觸具有該突出結構的該半導體晶片的該突出的邊緣部分。
  19. 如申請專利範圍第17項之方法，其中該磁場的產生和該接合導線的形成同時加以執行。
  20. 如申請專利範圍第1項之半導體封裝，其中該半導體封裝內含在一電子系統中，該電子系統進一步包括：一記憶體；以及一透過一匯流排耦接至該記憶體的控制器，其中該記憶體或是該控制器包含該封裝。
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