CN105552089B - 基板结构及其柔性基板的贴附方法、剥离方法 - Google Patents

基板结构及其柔性基板的贴附方法、剥离方法 Download PDF

Info

Publication number
CN105552089B
CN105552089B CN201610027120.XA CN201610027120A CN105552089B CN 105552089 B CN105552089 B CN 105552089B CN 201610027120 A CN201610027120 A CN 201610027120A CN 105552089 B CN105552089 B CN 105552089B
Authority
CN
China
Prior art keywords
layer
magnetic
flexible base
adhesive layer
carrier substrate
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201610027120.XA
Other languages
English (en)
Other versions
CN105552089A (zh
Inventor
邢建国
赛加坐
喻娟
王凤
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Original Assignee
BOE Technology Group Co Ltd
Beijing BOE Display Technology Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by BOE Technology Group Co Ltd, Beijing BOE Display Technology Co Ltd filed Critical BOE Technology Group Co Ltd
Priority to CN201610027120.XA priority Critical patent/CN105552089B/zh
Publication of CN105552089A publication Critical patent/CN105552089A/zh
Priority to PCT/CN2016/101766 priority patent/WO2017121152A1/zh
Priority to US15/521,753 priority patent/US20180029347A1/en
Application granted granted Critical
Publication of CN105552089B publication Critical patent/CN105552089B/zh
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B37/00Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding
    • B32B37/12Methods or apparatus for laminating, e.g. by curing or by ultrasonic bonding characterised by using adhesives
    • B32B37/1284Application of adhesive
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B3/00Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form
    • B32B3/10Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material
    • B32B3/14Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material characterised by a face layer formed of separate pieces of material which are juxtaposed side-by-side
    • B32B3/16Layered products comprising a layer with external or internal discontinuities or unevennesses, or a layer of non-planar form; Layered products having particular features of form characterised by a discontinuous layer, i.e. formed of separate pieces of material characterised by a face layer formed of separate pieces of material which are juxtaposed side-by-side secured to a flexible backing
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B38/00Ancillary operations in connection with laminating processes
    • B32B38/10Removing layers, or parts of layers, mechanically or chemically
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B43/00Operations specially adapted for layered products and not otherwise provided for, e.g. repairing; Apparatus therefor
    • B32B43/006Delaminating
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B7/00Layered products characterised by the relation between layers; Layered products characterised by the relative orientation of features between layers, or by the relative values of a measurable parameter between layers, i.e. products comprising layers having different physical, chemical or physicochemical properties; Layered products characterised by the interconnection of layers
    • B32B7/04Interconnection of layers
    • B32B7/12Interconnection of layers using interposed adhesives or interposed materials with bonding properties
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/71Manufacture of specific parts of devices defined in group H01L21/70
    • H01L21/76Making of isolation regions between components
    • H01L21/762Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers
    • H01L21/7624Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology
    • H01L21/76251Dielectric regions, e.g. EPIC dielectric isolation, LOCOS; Trench refilling techniques, SOI technology, use of channel stoppers using semiconductor on insulator [SOI] technology using bonding techniques
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/70Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
    • H01L21/77Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
    • H01L21/78Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
    • H01L21/7806Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate
    • H01L21/7813Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices involving the separation of the active layers from a substrate leaving a reusable substrate, e.g. epitaxial lift off
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1218Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition or structure of the substrate
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/02Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier
    • H01L27/12Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body
    • H01L27/1214Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having at least one potential-jump barrier or surface barrier; including integrated passive circuit elements with at least one potential-jump barrier or surface barrier the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
    • H01L27/1259Multistep manufacturing methods
    • H01L27/1262Multistep manufacturing methods with a particular formation, treatment or coating of the substrate
    • H01L27/1266Multistep manufacturing methods with a particular formation, treatment or coating of the substrate the substrate on which the devices are formed not being the final device substrate, e.g. using a temporary substrate
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K59/00Integrated devices, or assemblies of multiple devices, comprising at least one organic light-emitting element covered by group H10K50/00
    • H10K59/10OLED displays
    • H10K59/12Active-matrix OLED [AMOLED] displays
    • H10K59/1201Manufacture or treatment
    • HELECTRICITY
    • H10SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10KORGANIC ELECTRIC SOLID-STATE DEVICES
    • H10K71/00Manufacture or treatment specially adapted for the organic devices covered by this subclass
    • H10K71/80Manufacture or treatment specially adapted for the organic devices covered by this subclass using temporary substrates
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2307/00Properties of the layers or laminate
    • B32B2307/20Properties of the layers or laminate having particular electrical or magnetic properties, e.g. piezoelectric
    • B32B2307/208Magnetic, paramagnetic
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2327/00Polyvinylhalogenides
    • B32B2327/06PVC, i.e. polyvinylchloride
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2367/00Polyesters, e.g. PET, i.e. polyethylene terephthalate
    • BPERFORMING OPERATIONS; TRANSPORTING
    • B32LAYERED PRODUCTS
    • B32BLAYERED PRODUCTS, i.e. PRODUCTS BUILT-UP OF STRATA OF FLAT OR NON-FLAT, e.g. CELLULAR OR HONEYCOMB, FORM
    • B32B2457/00Electrical equipment
    • B32B2457/20Displays, e.g. liquid crystal displays, plasma displays
    • GPHYSICS
    • G02OPTICS
    • G02FOPTICAL DEVICES OR ARRANGEMENTS FOR THE CONTROL OF LIGHT BY MODIFICATION OF THE OPTICAL PROPERTIES OF THE MEDIA OF THE ELEMENTS INVOLVED THEREIN; NON-LINEAR OPTICS; FREQUENCY-CHANGING OF LIGHT; OPTICAL LOGIC ELEMENTS; OPTICAL ANALOGUE/DIGITAL CONVERTERS
    • G02F1/00Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics
    • G02F1/01Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour 
    • G02F1/13Devices or arrangements for the control of the intensity, colour, phase, polarisation or direction of light arriving from an independent light source, e.g. switching, gating or modulating; Non-linear optics for the control of the intensity, phase, polarisation or colour  based on liquid crystals, e.g. single liquid crystal display cells
    • G02F1/133Constructional arrangements; Operation of liquid crystal cells; Circuit arrangements
    • G02F1/1333Constructional arrangements; Manufacturing methods
    • G02F1/133305Flexible substrates, e.g. plastics, organic film

Abstract

一种基板结构及其柔性基板的贴附方法、剥离方法,该基板结构包括:载体基板,设置在载体基板上的柔性基板,还包括:夹在载体基板和柔性基板之间的一个或多个并排设置的粘结层;粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;粘结层与柔性基板接触的一侧具有该磁粘性层。由于该基板结构中在柔性基板一侧设置了在磁场的作用下粘性强度可以进行转变的磁粘性层,这样只需在磁场的作用下,通过磁粘性层即可实现柔性基板在制作过程中的贴附及剥离,且载体基板和粘结层可以回收利用。

Description

基板结构及其柔性基板的贴附方法、剥离方法
技术领域
本发明涉及基板制造技术领域,尤其涉及基板结构及其柔性基板的贴附方法、剥离方法。
背景技术
近年来,柔性显示作为下一代显示重点技术得到飞快的发展,柔性显示器件使用一种可卷曲的柔性基板,该柔性基板是由柔软的材料制成,其特点为可变型可弯曲,且具有轻薄,携带方便等优点。
目前,柔性基板加工困难,严重限制了其应用发展,一般将柔性基板固定到刚性的载体基板上制作,但柔性基板的贴附工艺较为复杂,且不易将制作完成的柔性基板剥离。目前把柔性基板固定到载体基板的方法很多,大致可以分成两类:其一,用粘合剂,如双面胶,将柔性基板贴附到载体基板上,器件制作完成后剥离;其二,直接将柔性基板的原材料涂覆在载体基板上,经过定型后形成柔性基板,待器件制作完成后再剥离。但是,上述方法存在如下缺陷:一、用粘合剂将柔性基板贴附到载体基板上,器件完成后剥离,不易将制备完成的柔性基板从载体基板取下或者有胶残留;二、直接将柔性基板的原材料涂覆在载体基板上,器件制作完成后剥离,该方法使柔性基板固定在载体基板上较为困难,且所用的涂覆原材料的方法和剥离方法成本较高。
发明内容
有鉴于此,本发明实施例提供基板结构及其柔性基板的贴附方法、剥离方法,只需在磁场的作用下,通过磁粘性层即可实现柔性基板在制作过程中的贴附及剥离,且载体基板和粘结层可以回收利用。
因此,本发明实施例提供了一种基板结构,包括:载体基板,设置在所述载体基板上的柔性基板,还包括:
夹在所述载体基板和柔性基板之间的一个或多个并排设置的粘结层;
所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
所述粘结层与所述柔性基板接触的一侧具有所述磁粘性层。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述粘结层还包括基材和粘结剂;
所述粘结层与所述载体基板接触的一侧具有所述粘结剂;
所述基材夹在所述磁粘性层和所述粘结剂之间。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述粘结剂为所述磁粘性层。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述磁粘性层在磁场的作用下在液体状态和塑性体状态之间转换;
所述塑性体状态的磁粘性层的粘性强度大于所述液体状态的磁粘性层的粘性强度。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,磁场强度越大,所述磁粘性层的粘性强度越大。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述磁粘性层包括铁磁性易磁化颗粒,分散剂和稳定剂;其中,
所述磁粘性层包括铁磁性易磁化颗粒,分散剂和稳定剂
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述所述铁磁性易磁化颗粒是铁粉。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述分散剂是矿物油、硅油或合成油。
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述稳定剂是纳米级HS1型SiO2
在一种可能的实现方式中,在本发明实施例提供的上述基板结构中,所述基材的材料为聚氯乙烯、亚克力、玻璃或聚酯类材料。
本发明实施例还提供了一种本发明实施例提供的上述基板结构的柔性基板的贴附方法,包括:
将粘结层贴附在载体基板上;所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
将柔性基板贴附在所述磁粘性层上;
在所述粘结层周围施加磁场,以使所述柔性基板通过所述粘结层固定在所述载体基板上。
在一种可能的实现方式中,在本发明实施例提供的上述贴附方法中,将粘结层贴附在载体基板上,具体包括:
将粘结层通过所述粘结层中的粘结剂贴附在载体基板上。
在一种可能的实现方式中,在本发明实施例提供的上述贴附方法中,所述粘结剂为所述磁粘性层。
在一种可能的实现方式中,在本发明实施例提供的上述贴附方法中,在所述磁粘性层周围施加磁场,所述磁粘性层由液体状态向塑性体状态转换;其中,所述塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度。
本发明实施例还提供了一种本发明实施例提供的上述基板结构的柔性基板的剥离方法,包括:
在柔性基板通过粘结层固定在载体基板后,将所述粘结层周围的磁场去掉;所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
去掉磁场后,将所述柔性基板从所述粘结层中的磁粘性层上剥离。
在一种可能的实现方式中,在本发明实施例提供的上述剥离方法中,还包括:
将所述载体基板从所述粘结层中的粘结剂上剥离。
在一种可能的实现方式中,在本发明实施例提供的上述剥离方法中,所述粘结剂为所述磁粘性层。
在一种可能的实现方式中,在本发明实施例提供的上述剥离方法中,将所述粘结层周围的磁场去掉后,所述磁粘性层由塑性体状态向液体状态转化;其中,所述塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度。
本发明实施例还提供了一种基板结构,包括:载体基板,设置在所述载体基板上的柔性基板,还包括:
夹在所述载体基板和柔性基板之间的一个或多个并排设置的粘结层;
所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
所述粘结层与所述载体基板接触的一侧具有所述磁粘性层。
本发明实施例的有益效果包括:
本发明实施例提供的基板结构及其柔性基板的贴附方法、剥离方法,该基板结构包括:载体基板,设置在载体基板上的柔性基板,还包括:夹在载体基板和柔性基板之间的一个或多个并排设置的粘结层;粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;粘结层与柔性基板接触的一侧具有该磁粘性层。由于该基板结构中在柔性基板一侧设置了在磁场的作用下粘性强度可以进行转变的磁粘性层,这样只需在磁场的作用下,通过磁粘性层即可实现柔性基板在制作过程中的贴附及剥离,且载体基板和粘结层可以回收利用。
附图说明
图1为本发明实施例提供的基板结构的结构示意图之一;
图2为本发明实施例提供的基板结构的结构示意图之二;
图3为本发明实施例提供的基板结构的结构示意图之三;
图4为本发明实施例提供的柔性基板的贴附方法流程图;
图5为本发明实施例提供的柔性基板的剥离方法流程图。
具体实施方式
下面结合附图,对本发明实施例提供的基板结构及其柔性基板的贴附方法、剥离方法的具体实施方式进行详细地说明。
其中,附图中各膜层的厚度和形状不反映基板结构的真实比例,目的只是示意说明本发明内容。
本发明实施例提供了一种基板结构,如图1至图3所示,包括:载体基板1,设置在载体基板1上的柔性基板2,其中载体基板可以为刚性玻璃基板,还包括:
夹在载体基板1和柔性基板2之间的一个或多个并排设置的粘结层3;
粘结层3包括在磁场的作用下粘性强度进行转变的磁粘性层31;
粘结层3与柔性基板2接触的一侧具有磁粘性层31。
在本发明实施例提供的上述基板结构,由于该基板结构中在柔性基板一侧设置了在磁场的作用下粘性强度可以进行转变的磁粘性层,这样只需在磁场的作用下,通过磁粘性层即可实现柔性基板在制作过程中的贴附及剥离,且载体基板和粘结层可以回收利用。
在具体实施时,在本发明实施例提供的上述基板结构中,磁粘性层在磁场的作用下可以在液体状态和塑性体状态之间转换;塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度,即磁粘性层在磁场的作用下可以在具有低粘度的悬浮液和具有高粘度的粘体塑性体之间进行转换。
在具体实施时,在本发明实施例提供的上述基板结构中,当磁场强度越大时,磁粘性层的粘性强度越大。当未施加磁场时,即磁场强度为0,磁粘性层为液体状态;在施加磁场后,随着磁场强度的不断增大,达到一定值时,磁粘性层由液体状态变为塑性体状态,粘性强度逐渐增强。这样,磁粘性层可根据磁场强度的不同,实现调节磁粘性液体层不同的粘性强度。
在具体实施时,在本发明实施例提供的上述基板结构中,如图1所示,载体基板1和柔性基板2只具有一层磁粘性层31,由于该磁粘性层31在液体状态时流动性较好,容易涂覆到载体基板背面或边界区域,贴附柔性基板后容易产生污染,因此为了避免柔性基板受到污染,粘结层可以设置为三层结构,如图2和图3所示,粘结层3还可以包括基材32和粘结剂33;粘结层3与载体基板1接触的一侧具有粘结剂33;基材32夹在磁粘性层31和粘结剂33之间。这样,该粘结层可以单独制作,然后直接贴附在载体基板上,无需在载体基板上进行涂覆磁粘性层的步骤,简化了制作工艺,降低了成本。
进一步地,在具体实施时,在本发明实施例提供的上述基板结构中,粘结剂的种类有多种,例如双面胶,此时粘结层与载体基板可以作为一个整体进行回收利用;该粘结剂的种类也可以为磁粘性层,如图2和图3所示,当粘结剂33选择为在磁场的作用下粘性强度可以进行转变的磁粘性层时,由于磁粘性液体容易清除,载体基板可以单独回收利用。
在具体实施时,在本发明实施例提供的上述基板结构中,磁粘性层主要由磁流变液组成。磁流变液(Magnetorheological Fluid)是一种智能材料,在零磁场条件下呈现出低粘度的牛顿流体特性;而在强磁场作用下,则呈现出高粘度、低流动性的塑性体(Bingham体)特性。磁流变液是由高磁导率、低磁滞性的微小软磁性颗粒和非导磁性液体混合而成的悬浮体。目前普遍采用的磁流变液是三相组成的悬浮液。一般由铁磁性易磁化颗粒作为弥散相,矿物油、硅油、合成油作为分散相和改善磁流变液性能的稳定剂三种物质构成。例如,本发明使用的磁流变液配方如下:
弥散相粒子:还原羟基铁粉DT-50,微米级;
分散相:甲级硅油201#;
稳定剂:纳米级HS1型SiO2,球状。
对于磁流变液组成成分的选择可以根据实际情况而定,在此不做限定。
在具体实施时,在本发明实施例提供的上述基板结构中,基材的材料可以设置为聚氯乙烯(Polyvinyl chloride,PVC)、亚克力(又称聚甲基丙烯酸甲酯,PMMA)、玻璃或聚酯类材料。这种基材可以降低成本,同时避免对基板的污染。
基于同一发明构思,本发明实施例还提供了一种本发明实施例提供的上述基板结构中的柔性基板的贴附方法,由于该方法解决问题的原理与前述一种基板结构相似,因此该方法的实施可以参见基板结构的实施,重复之处不再赘述。
在具体实施时,本发明实施例提供的基板结构的柔性基板的贴附方法,如图4所示,具体包括以下步骤:
S401、将粘结层贴附在载体基板上;粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
S402、将柔性基板贴附在磁粘性层上;
S403、在粘结层周围施加磁场,以使柔性基板通过粘结层固定在载体基板上。
在本发明实施例提供的上述柔性基板的贴附方法中,由于柔性基板贴附在在磁场的作用下粘性强度可以进行转变的磁粘性层上,这样在磁场的作用下,对磁粘性层的粘性强度进行调节,由低粘度变为高粘度,可以将柔性基板和载体基板固定到一起,此贴附方法简单便利。
在具体实施时,在本发明实施例提供的上述柔性基板的贴附方法中,步骤S401将粘结层贴附在载体基板上,具体可以采用如下方式实现:
将粘结层通过粘结层中的粘结剂贴附在载体基板上。
需要说明的是,该粘结层可以单独制作,设置为两侧分别具有粘结剂,以及夹在粘结剂之间的基材的三层结构,与柔性基板接触的一侧的粘结剂具体设置为磁粘性层,与载体基板接触的一侧的粘结剂可以有多种选择。这样,当该粘结层可以直接贴附在载体基板上,无需在载体基板上进行涂覆磁粘性层的步骤,简化了制作工艺,降低了成本。
进一步地,在具体实施时,在本发明实施例提供的上述柔性基板的贴附方法中,与载体基板接触的一侧的粘结剂也可以设置为磁粘性层。由于磁粘性液体容易清除,载体基板可以单独回收利用。
在具体实施时,在本发明实施例提供的上述柔性基板的贴附方法中,在磁粘性层周围施加磁场,磁粘性层可以由液体状态向塑性体状态转换;其中,塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度。此时磁粘性液体层在磁场的作用下,由具有低粘度的悬浮液变为具有高粘度的粘体塑性体,将柔性基板和玻璃基板固定到一起。
基于同一发明构思,本发明实施例还提供了一种本发明实施例提供的上述基板结构中的柔性基板的剥离方法,由于该方法解决问题的原理与前述一种基板结构相似,因此该方法的实施可以参见基板结构的实施,重复之处不再赘述。
在具体实施时,本发明实施例提供的柔性基板的剥离方法,如图5所示,具体包括以下步骤:
S501、在柔性基板通过粘结层固定在载体基板后,将粘结层周围的磁场去掉;粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
S502、去掉磁场后,将柔性基板从粘结层中的磁粘性层上剥离。
在本发明实施例提供的上述柔性基板的剥离方法中,由于去掉磁场后,磁粘性层的高粘度变为低粘度,则可以进行对柔性基板的剥离,采用此方法简单便利,可以在剥离柔性基板的时候不对其造成损坏,同时粘结层和载体基板可以回收利用,且磁粘性层容易清除,不造成污染等优点。
在具体实施时,在本发明实施例提供的上述柔性基板的剥离方法中,还可以包括:将载体基板从粘结层中的粘结剂上剥离。
进一步地,在具体实施时,在本发明实施例提供的上述柔性基板的剥离方法中,当与载体基板接触的粘结剂选择为磁粘性层时,去掉磁场后,磁粘性层的粘度变低,以便进行对载体基板的剥离,且载体基板可以单独回收利用。
在具体实施时,在本发明实施例提供的上述柔性基板的剥离方法中,将粘结层周围的磁场去掉后,磁粘性层由塑性体状态向液体状态转化;其中,塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度。此时在磁场去掉后,磁粘性液体层由具有高粘度的粘体塑性体变为具有低粘度的悬浮液,便于对柔性基板的剥离。
本发明实施例还提供了一种基板结构,包括:载体基板,设置在载体基板上的柔性基板,还包括:
夹在载体基板和柔性基板之间的一个或多个并排设置的粘结层;
粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
粘结层与载体基板接触的一侧具有磁粘性层。
在本发明实施例提供的上述基板结构,由于该基板结构中在载体基板一侧设置了在磁场的作用下粘性强度可以进行转变的磁粘性层,这样只需在磁场的作用下,通过磁粘性层即可实现载体基板的剥离,且载体基板可以单独回收利用。
本发明实施例提供的基板结构及其柔性基板的贴附方法、剥离方法,该基板结构包括:载体基板,设置在载体基板上的柔性基板,还包括:夹在载体基板和柔性基板之间的一个或多个并排设置的粘结层;粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;粘结层与柔性基板接触的一侧具有该磁粘性层。由于该基板结构中在柔性基板一侧设置了在磁场的作用下粘性强度可以进行转变的磁粘性层,这样只需在磁场的作用下,通过磁粘性层即可实现柔性基板在制作过程中的贴附及剥离,且载体基板和粘结层可以回收利用。
显然,本领域的技术人员可以对本发明进行各种改动和变型而不脱离本发明的精神和范围。这样,倘若本发明的这些修改和变型属于本发明权利要求及其等同技术的范围之内,则本发明也意图包含这些改动和变型在内。

Claims (14)

1.一种基板结构,包括:载体基板,设置在所述载体基板上的柔性基板,其特征在于,还包括:
夹在所述载体基板和柔性基板之间的一个或多个并排设置的粘结层;
所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
所述粘结层与所述柔性基板接触的一侧具有所述磁粘性层,
其中,所述粘结层还包括基材和粘结剂;
所述粘结层与所述载体基板接触的一侧具有所述粘结剂;
所述基材夹在所述磁粘性层和所述粘结剂之间,
其中,所述粘结剂为磁粘性层。
2.如权利要求1所述的基板结构,其特征在于,所述磁粘性层在磁场的作用下在液体状态和塑性体状态之间转换;
所述塑性体状态的磁粘性层的粘性强度大于所述液体状态的磁粘性层的粘性强度。
3.如权利要求1所述的基板结构,其特征在于,磁场强度越大,所述磁粘性层的粘性强度越大。
4.如权利要求1所述的基板结构,其特征在于,所述磁粘性层包括铁磁性易磁化颗粒,分散剂和稳定剂。
5.如权利要求4所述的基板结构,其特征在于,所述铁磁性易磁化颗粒是铁粉。
6.如权利要求4所述的基板结构,其特征在于,所述分散剂是矿物油、硅油或合成油。
7.如权利要求4所述的基板结构,其特征在于,所述稳定剂是SiO2
8.如权利要求1所述的基板结构,其特征在于,所述基材的材料为聚氯乙烯、亚克力、玻璃或聚酯类材料。
9.一种如权利要求1-8任一项所述基板结构的柔性基板的贴附方法,其特征在于,包括:
将粘结层贴附在载体基板上;所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
将柔性基板贴附在所述磁粘性层上;
在所述粘结层周围施加磁场,以使所述柔性基板通过所述粘结层固定在所述载体基板上。
10.如权利要求9所述的贴附方法,其特征在于,将粘结层贴附在载体基板上,具体包括:
将粘结层通过所述粘结层中的粘结剂贴附在载体基板上。
11.如权利要求9所述的贴附方法,其特征在于,在所述磁粘性层周围施加磁场,所述磁粘性层由液体状态向塑性体状态转换;其中,所述塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度。
12.一种如权利要求1-8任一项所述基板结构的柔性基板的剥离方法,其特征在于,包括:
在柔性基板通过粘结层固定在载体基板后,将所述粘结层周围的磁场去掉;所述粘结层包括在磁场的作用下粘性强度进行转变的磁粘性层;
去掉磁场后,将所述柔性基板从所述粘结层中的磁粘性层上剥离。
13.如权利要求12所述的剥离方法,其特征在于,还包括:
将所述载体基板从所述粘结层中的粘结剂上剥离。
14.如权利要求12所述的剥离方法,其特征在于,将所述粘结层周围的磁场去掉后,所述磁粘性层由塑性体状态向液体状态转化;其中,所述塑性体状态的磁粘性层的粘性强度大于液体状态的磁粘性层的粘性强度。
CN201610027120.XA 2016-01-15 2016-01-15 基板结构及其柔性基板的贴附方法、剥离方法 Active CN105552089B (zh)

Priority Applications (3)

Application Number Priority Date Filing Date Title
CN201610027120.XA CN105552089B (zh) 2016-01-15 2016-01-15 基板结构及其柔性基板的贴附方法、剥离方法
PCT/CN2016/101766 WO2017121152A1 (zh) 2016-01-15 2016-10-11 显示基板及其柔性基板的贴附方法、剥离方法
US15/521,753 US20180029347A1 (en) 2016-01-15 2016-10-11 Display Substrate And Methods For Attaching And Peeling Flexible Substrate Thereof

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201610027120.XA CN105552089B (zh) 2016-01-15 2016-01-15 基板结构及其柔性基板的贴附方法、剥离方法

Publications (2)

Publication Number Publication Date
CN105552089A CN105552089A (zh) 2016-05-04
CN105552089B true CN105552089B (zh) 2018-09-07

Family

ID=55831178

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201610027120.XA Active CN105552089B (zh) 2016-01-15 2016-01-15 基板结构及其柔性基板的贴附方法、剥离方法

Country Status (3)

Country Link
US (1) US20180029347A1 (zh)
CN (1) CN105552089B (zh)
WO (1) WO2017121152A1 (zh)

Families Citing this family (14)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN105552089B (zh) * 2016-01-15 2018-09-07 京东方科技集团股份有限公司 基板结构及其柔性基板的贴附方法、剥离方法
CN105870327A (zh) * 2016-06-17 2016-08-17 深圳市华星光电技术有限公司 柔性oled的制作方法及柔性oled
CN106206610B (zh) * 2016-08-18 2019-03-15 昆山国显光电有限公司 可分离的衬底结构及其制备方法、显示装置的制造方法
CN106876247B (zh) * 2017-02-15 2020-02-07 纳晶科技股份有限公司 柔性器件的制备方法
CN107731885A (zh) * 2017-11-20 2018-02-23 武汉华星光电半导体显示技术有限公司 柔性显示面板及制作方法
CN108878342B (zh) * 2018-06-27 2022-04-19 歌尔股份有限公司 晶圆加工方法
CN111048461B (zh) * 2018-10-12 2022-06-03 瀚宇彩晶股份有限公司 电子装置的离型前结构及电子装置的制造方法
CN109493737A (zh) * 2018-12-14 2019-03-19 云谷(固安)科技有限公司 柔性模组、柔性显示面板和柔性显示装置
CN109904352B (zh) * 2019-02-20 2021-11-09 京东方科技集团股份有限公司 承载基板及制作方法、柔性基板及制作方法、显示装置
CN110444663A (zh) * 2019-08-06 2019-11-12 昆山维信诺科技有限公司 基板结构、吸附及剥离方法、显示面板及显示装置
CN113135436B (zh) * 2020-01-20 2023-02-17 上海广矩自动化设备有限公司 一种粘性片剥离方法
CN112670248B (zh) * 2020-12-24 2022-10-04 武汉华星光电半导体显示技术有限公司 柔性显示面板及其制备方法
CN113012580B (zh) * 2021-03-09 2022-11-01 深圳市华星光电半导体显示技术有限公司 一种牺牲层、显示面板制程方法及显示面板
CN114284452B (zh) * 2021-12-17 2023-11-28 深圳市华星光电半导体显示技术有限公司 一种显示装置

Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200617128A (en) * 2004-06-09 2006-06-01 Entegris Inc Magneto-active adhesive systems
US20130095592A1 (en) * 2010-07-16 2013-04-18 Panasonic Corporation Method for fabricating organic el device
CN105023884A (zh) * 2014-04-18 2015-11-04 爱思开海力士有限公司 半导体封装及其制造方法

Family Cites Families (10)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5667715A (en) * 1996-04-08 1997-09-16 General Motors Corporation Magnetorheological fluids
US6054008A (en) * 1998-01-22 2000-04-25 International Business Machines Corporation Process for adhesively attaching a temporary lid to a microelectronic package
DE19846902A1 (de) * 1998-10-12 2000-05-04 Beiersdorf Ag Elektronenstrahlvernetzung und UV-Vernetzung von Masseschichten sowie Produkte, die mit diesen Masseschichten hergestellt werden
JP2003173872A (ja) * 2001-12-06 2003-06-20 Sony Corp アライメント方法、パターン形成方法及びアライメント装置、並びに有機エレクトロルミネッセンス表示装置及びその製造方法
US20050274454A1 (en) * 2004-06-09 2005-12-15 Extrand Charles W Magneto-active adhesive systems
US7956453B1 (en) * 2008-01-16 2011-06-07 Amkor Technology, Inc. Semiconductor package with patterning layer and method of making same
US8628636B2 (en) * 2012-01-13 2014-01-14 Advance Materials Corporation Method of manufacturing a package substrate
KR101546604B1 (ko) * 2014-02-10 2015-08-21 앰코 테크놀로지 코리아 주식회사 자성을 이용한 반도체 디바이스 탈착 방법
CN104993070A (zh) * 2015-07-02 2015-10-21 深圳市华星光电技术有限公司 一种制作柔性oled显示器件的方法
CN105552089B (zh) * 2016-01-15 2018-09-07 京东方科技集团股份有限公司 基板结构及其柔性基板的贴附方法、剥离方法

Patent Citations (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
TW200617128A (en) * 2004-06-09 2006-06-01 Entegris Inc Magneto-active adhesive systems
US20130095592A1 (en) * 2010-07-16 2013-04-18 Panasonic Corporation Method for fabricating organic el device
CN105023884A (zh) * 2014-04-18 2015-11-04 爱思开海力士有限公司 半导体封装及其制造方法

Also Published As

Publication number Publication date
WO2017121152A1 (zh) 2017-07-20
US20180029347A1 (en) 2018-02-01
CN105552089A (zh) 2016-05-04

Similar Documents

Publication Publication Date Title
CN105552089B (zh) 基板结构及其柔性基板的贴附方法、剥离方法
US20200064705A1 (en) Method of Forming a Top Plane Connection in an Electro-Optic Device
US7764420B2 (en) Display device, method of manufacturing display device and electronic apparatus
US8405600B2 (en) Method for reducing temperature-caused degradation in the performance of a digital reader
US20130278875A1 (en) Curved surface display device
CN102667603B (zh) 扭转球型电子纸
CN105552088A (zh) 基板结构及其柔性基板的贴附方法、剥离方法
CN105741682A (zh) 一种显示面板及显示装置
US10509294B2 (en) Dual sided electrophoretic display
CN102331642A (zh) 液晶显示面板及其制作方法
CN103235460A (zh) 一种显示装置及其制造方法
US9897891B2 (en) Multi-layered electrophoretic displays
US11088329B2 (en) Carrier substrate and fabricating method thereof, flexible substrate and fabricating method thereof, and display device
CN106328681A (zh) 一种柔性显示屏及其制备方法
CN104698690A (zh) 液晶显示面板及其制备方法
US10824042B1 (en) Electro-optic display and composite materials having low thermal sensitivity for use therein
TWI778128B (zh) 電磁波吸收體用組成物、及電磁波吸收體
CN203149253U (zh) 彩色固态电光显示器
US20110032180A1 (en) Display device, method of manufacturing display device and electronic apparatus
JP2007233178A (ja) マイクロカプセル型電気泳動式表示装置の表示パネルの製造方法
CN107901519A (zh) 一种玻璃基板的制备方法、玻璃基板及智能移动终端
KR101018189B1 (ko) 롤투롤 공정을 이용한 전자종이 제조방법
WO2020092190A1 (en) Electro-optic medium and writable device incorporating the same
CN109799638A (zh) 液晶显示模组及液晶显示装置
JP6144036B2 (ja) 表示媒体、表示装置

Legal Events

Date Code Title Description
C06 Publication
PB01 Publication
C10 Entry into substantive examination
SE01 Entry into force of request for substantive examination
GR01 Patent grant
GR01 Patent grant