TWI620236B - 形成球柵陣列半導體封裝的電磁干擾遮罩層的方法和用於所述方法的基帶 - Google Patents

形成球柵陣列半導體封裝的電磁干擾遮罩層的方法和用於所述方法的基帶 Download PDF

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TWI620236B
TWI620236B TW105114046A TW105114046A TWI620236B TW I620236 B TWI620236 B TW I620236B TW 105114046 A TW105114046 A TW 105114046A TW 105114046 A TW105114046 A TW 105114046A TW I620236 B TWI620236 B TW I620236B
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grid array
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崔承煥
韓太燮
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Abstract

本發明提供一種形成球柵陣列（ball grid array，BGA）半導體封裝的電磁干擾（electromagnetic interference，EMI）遮罩層的方法以及在所述方法中使用的基帶，且更確切地說，提供一種在具有下表面（在下表面上形成多個焊料球）的BGA半導體封裝的上表面和側表面上形成用於阻擋EMI的遮罩層的方法以及在所述方法中使用的基帶。根據形成BGA半導體封裝的EMI遮罩層的方法，可以藉由使用基帶在BGA半導體封裝上快速地、容易地且有效地形成EMI遮罩層，由此不僅提高過程效率而且顯著減少製造成本。

Description

形成球柵陣列半導體封裝的電磁干擾遮罩層的方法和用於所述方法的基帶
本發明主張2015年5月19日向韓國智慧財產局提交的第10-2015-0069520號韓國專利申請的權益，所述發明的公開內容以全文引用的方式併入本文中。
一個或多個實施例有關一種形成球柵陣列(ball grid array，BGA)半導體封裝的電磁干擾(electromagnetic interference，EMI)遮罩層的方法以及在所述方法中使用的基帶，且更確切地說，有關一種在具有下表面(在下表面上形成多個焊料球)的BGA半導體封裝的上表面和側表面上形成用於阻擋EMI的遮罩層的方法以及在所述方法中使用的基帶。
半導體封裝通常在其外表面上包含電磁干擾(electromagnetic interference，EMI)遮罩層以防止電磁波的發射 或外部電磁波對其內部電路的損壞。
根據相關技術，藉由用液體黏合劑塗布托盤以使用擠壓形成具有均勻厚度的層，且接著藉由將半導體封裝安置在托盤上並將所述半導體封裝黏附到托盤來形成遮罩層。在將半導體封裝黏附到托盤時，在半導體封裝上執行濺鍍，從而在半導體封裝的上表面和側表面上形成EMI遮罩層(除半導體封裝的下表面外)。當完成濺鍍時，將半導體封裝與托盤分離以完成遮罩層的形成。
在如相關技術的形成EMI遮罩層的方法中，會使用用於用液體黏合劑塗布托盤的設備和用於將半導體封裝黏附到托盤並使其硬化的設備。然而，設備是非常昂貴的，因此根據相關技術形成EMI遮罩層的方法的成本也非常高。另外，所述方法包含在托盤的黏合劑上塗布脫模劑以促進黏合劑與半導體封裝的分離的操作，這使得整個方法複雜並增加了成本。
一個或多個實施例包含一種形成球柵陣列(ballgridarray，BGA)半導體封裝的電磁干擾(electromagneticinterference，EMI)遮罩層的方法以及在所述方法中使用的基帶，使用所述方法可以有效地形成EMI遮罩層，可以簡化過程並且可以減少製造成本。
其他方面將部分在以下描述中得到闡述，並且部分地，將從描述中顯而易見，或者可以藉由對所呈現的實施例的實踐習 得。
根據一個或多個實施例，一種在BGA半導體封裝的外表面上形成所述BGA半導體封裝的EMI遮罩層以遮罩EMI的方法包含：(a)提供BGA半導體封裝，所述BGA半導體封裝具有在其上形成多個焊料球的下表面；(b)提供基帶，所述基帶具有比焊料球的高度更厚且由彈性黏合材料形成的附著部分；(c)藉由抵著基帶按壓BGA半導體封裝，使得BGA半導體封裝的多個焊料球陷入基帶的附著部分中並且BGA半導體封裝黏附到基帶，形成封裝-帶組合件；(d)藉由在封裝-帶組合件上濺鍍導電層，在BGA半導體封裝上形成EMI遮罩層；以及(e)從封裝-帶組合件移除基帶。
另外，可以在上述形成BGA半導體封裝的EMI遮罩層的方法中使用基帶。
10‧‧‧球柵陣列半導體封裝(BGA半導體封裝)
11‧‧‧焊料球
20‧‧‧基帶
21‧‧‧附著部分
31‧‧‧電磁干擾遮罩層(EMI遮罩層)
40‧‧‧基帶
41‧‧‧附著部分
42‧‧‧球孔
100‧‧‧封裝-帶組合件
200‧‧‧封裝-帶組合件
藉由結合附圖對實施例進行的以下描述，這些和/或其他方面將變得顯而易見並且更加容易瞭解，在所述附圖中：圖1是在根據本發明概念的實施例的形成球柵陣列(ball grid array，BGA)半導體封裝的電磁干擾(electromagnetic interference，EMI)遮罩層的方法中使用的BGA半導體封裝的實例的透視圖。
圖2到圖5是描述根據本發明概念的實施例藉由使用圖1中 示出的BGA半導體封裝形成BGA半導體封裝的EMI遮罩層的方法的視圖。以及圖6和圖7是描述根據本發明概念的另一實施例藉由使用圖1中示出的BGA半導體封裝形成BGA半導體封裝的EMI遮罩層的方法的視圖。
下文將參考附圖更充分地描述一種根據本發明概念的實施例的形成球柵陣列(ball grid array，BGA)半導體封裝的電磁干擾(electromagnetic interference，EMI)遮罩層的方法，在所述附圖中示出了本發明的示例性實施例。
首先，將描述一種根據本發明概念的實施例的形成BGA半導體封裝的EMI遮罩層的方法。
圖1是在根據本發明概念的實施例的形成BGA半導體封裝的EMI遮罩層的方法中使用的BGA半導體封裝10的實例的透視圖。圖2到圖5是描述根據本發明概念的實施例藉由使用圖1中示出的BGA半導體封裝10形成BGA半導體封裝10的EMI遮罩層的方法的視圖。
根據本發明概念的BGA半導體封裝10具有如圖1中所示的結構。圖1是其中BGA半導體封裝10轉成倒置以便示出其下表面和BGA半導體封裝10的焊料球11的透視圖。如圖1中所示，多個焊料球11安裝在BGA半導體封裝10的下表面上。EMI被阻擋，因為除在其上形成焊料球11的BGA半導體封裝10的下 表面外，在BGA半導體封裝10的上表面和側表面上形成導電層。為了形成如上文所描述的EMI遮罩層，除BGA半導體封裝10的在其上形成焊料球11的下表面外，在BGA半導體封裝10的其他表面上形成導電層，所述導電層同時覆蓋BGA半導體封裝10的下表面。
首先，在步驟(a)中，如圖1中所示，提供具有在其上形成多個焊料球11的下表面的BGA半導體封裝10。BGA半導體封裝10提供為製成品。
接著，在步驟(b)中，如圖2中所示，提供具有由彈性黏合材料形成的附著部分21的基帶20。參考圖3，基帶20的附著部分21的厚度大於BGA半導體封裝10的焊料球11的高度。基帶20的附著部分21可以由相對軟的黏合材料形成。由於附著部分21的厚度大於焊料球11的高度，因此附著部分21可以完全包圍焊料球11並且同時接觸待黏附到其上的BGA半導體封裝10的下表面。
當如上提供了BGA半導體封裝10和基帶20時，在步驟(c)中，如圖3中所示，抵著基帶20按壓BGA半導體封裝10以便將BGA半導體封裝10附著到基帶20。由於基帶20的附著部分21具有軟質特性，因此附著部分21被BGA半導體封裝10的焊料球11彈性地和/或塑性地變形，使得焊料球11陷入附著部分21中。也就是說，焊料球11鑽入附著部分21中以被附著部分21包圍，並且BGA半導體封裝10的下表面黏附到基帶20。也就是 說，BGA半導體封裝10的下表面和焊料球11黏附到基帶20的附著部分21，由此從外面被阻擋。當以適當的力將BGA半導體封裝10按壓到預定深度時，如上文所描述，焊料球11的整個外表面被基帶20的附著部分21完全包圍，並且BGA半導體封裝10的下表面接觸附著部分21。附著部分21基本上彈性地變形但是在預定臨界點(threshold point)之後接著塑性變形，以便更完全地覆蓋焊料球11以及無縫地覆蓋BGA半導體封裝10的下表面。
如上文所描述，在步驟(d)中，藉由在將基帶20黏附到BGA半導體封裝10而形成的封裝-帶組合件100上執行濺鍍，在BGA半導體封裝10上形成EMI遮罩層31，如圖4中所示。基帶20的附著部分21由化學性能穩定且耐濺鍍溫度的材料形成，因此，僅在BGA半導體封裝10的上表面和側表面上而不在BGA半導體封裝10的下表面上形成導電EMI遮罩層31。因此，防止了BGA半導體封裝10的焊料球11電連接到彼此並導致故障的可能性。
當如上文所描述完成在封裝-帶組合件100上形成EMI遮罩層31的過程時，在步驟(e)中，如圖5中所示，從封裝-帶組合件100移除基帶20。取決於附著部分21的材料，可以使用各種方法來移除基帶20。根據附著部分21的材料，可以藉由對基帶20加壓且接著在使BGA半導體封裝10處於固定狀態時拉出基帶20而從BGA半導體封裝10移除基帶20。替代地，可以藉由對基帶20加熱使得附著部分21變軟並已減弱黏附力來撕掉基帶20。 根據各種情況，可以將基帶20加熱到較高溫度，使得附著部分21被熔化以自發地與BGA半導體封裝10分離。
接下來，將參考圖6和圖7描述根據本發明概念的另一實施例的形成BGA半導體封裝的EMI遮罩層的方法。
根據圖6和圖7的實施例的形成BGA半導體封裝的EMI遮罩層的方法與形成BGA半導體封裝10的EMI遮罩層31的方法的不同之處在於，如圖6和圖7中所示，使用具有帶球孔42的附著部分41的基帶40。
根據圖6和圖7的實施例的方法的步驟(a)與根據先前實施例的形成BGA半導體封裝的EMI遮罩層的方法的步驟(a)相同。
根據圖6和圖7的實施例的形成BGA半導體封裝的EMI遮罩層的方法，在步驟(b)中，如圖6中所示，使用在對應於於BGA半導體封裝10的焊料球11的位置處具有球孔42的附著部分41。相較於平面的環境，附著部分41的球孔42形成為凹面的，或根據各種情況可以具有與BGA半導體封裝10的下表面上的焊料球11的形狀相對應的形狀。
在步驟(c)中，在將BGA半導體封裝10的焊料球11安置為分別面對附著部分41的球孔42時，可以藉由使用基帶40抵著附著部分41按壓BGA半導體封裝10，以便形成如圖7中所示的封裝-帶組合件200。在這種情況下，如圖7中所示，圍繞球孔42的附著部分41可以並非完全包圍焊料球11。同樣在這種情 況下，基帶40的附著部分41相對於於外界完全密閉地密封BGA半導體封裝10的下表面，因此，即使當在步驟(d)中形成了EMI遮罩層31時，EMI遮罩層31也不會形成於BGA半導體封裝10的下表面上。
當完成形成EMI遮罩層31的步驟(d)時，在步驟(e)中移除基帶40以完成根據圖6和圖7的實施例的形成BGA半導體封裝的EMI遮罩層的方法。
根據形成BGA半導體封裝的EMI遮罩層的方法，可以藉由使用基帶在BGA半導體封裝上快速地、容易地且有效地形成EMI遮罩層，由此不僅提高過程效率而且顯著減少成本。
應理解，本文中所描述的示例性實施例應被視為僅具有描述性意義，而非出於限制的目的。每一個實施例內的特徵或方面的描述通常應被視為可用於其他實施例中的其他類似特徵或方面。
雖然已參考圖式描述了一個或多個實施例，但所屬領域的一般技術人員將理解，可在不脫離由所附權利要求界定的精神和範圍的情況下在其中進行形式和細節上的各種改變。

Claims (6)

  1. 一種形成球柵陣列半導體封裝的電磁干擾遮罩層的方法，所述方法包括：(a)提供球柵陣列半導體封裝，所述球柵陣列半導體封裝具有下表面，所述下表面上形成有多個焊料球；(b)提供基帶，所述基帶的附著部分具有比所述焊料球的高度更厚且由彈性黏合材料形成；(c)藉由抵著所述基帶按壓所述球柵陣列半導體封裝，使得所述球柵陣列半導體封裝的所述多個焊料球陷入所述基帶的所述附著部分中，並且所述球柵陣列半導體封裝黏附到所述基帶，形成封裝-帶組合件；(d)藉由在所述封裝-帶組合件上濺鍍導電層，在所述球柵陣列半導體封裝上形成電磁干擾遮罩層；以及(e)從所述封裝-帶組合件移除所述基帶。
  2. 如申請專利範圍第1項所述的方法，其中在(c)中，抵著所述基帶按壓所述球柵陣列半導體封裝，使得所述焊料球的全部外表面被所述基帶的所述附著部分包圍，並且所述球柵陣列半導體封裝的所述下表面接觸所述基帶的所述附著部分。
  3. 如申請專利範圍第1項所述的方法，其中在(c)期間所述基帶的所述附著部分彈性地且塑性地變形，以便覆蓋所述球柵陣列半導體封裝的所述焊料球的全部並且黏附到所述球柵陣列半導體封裝的所述下表面。
  4. 如申請專利範圍第1項所述的方法，其中在(e)中，對所述封裝-帶組合件加熱以將所述基帶從所述球柵陣列半導體封裝分離。
  5. 如申請專利範圍第3項所述的方法，其中在(b)中，在所述基帶的所述附著部分中在分別對應於所述球柵陣列半導體封裝的所述焊料球的位置處形成凹面的球孔，其中在(c)中，藉由抵著所述附著部分按壓所述球柵陣列半導體封裝同時將所述球柵陣列半導體封裝的所述焊料球安置為分別面對所述附著部分的所述球孔來形成所述封裝-帶組合件。
  6. 一種在如申請專利範圍第1項所述的方法中使用的基帶。
TW105114046A 2015-05-19 2016-05-06 形成球柵陣列半導體封裝的電磁干擾遮罩層的方法和用於所述方法的基帶 TWI620236B (zh)

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