CN106169463A - 形成电磁干扰屏蔽层的方法和用于所述方法的基带 - Google Patents

形成电磁干扰屏蔽层的方法和用于所述方法的基带 Download PDF

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CN106169463A
CN106169463A CN201610329719.9A CN201610329719A CN106169463A CN 106169463 A CN106169463 A CN 106169463A CN 201610329719 A CN201610329719 A CN 201610329719A CN 106169463 A CN106169463 A CN 106169463A
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grid array
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崔承焕
韩太燮
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Protec Co Ltd Korea
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Abstract

本发明提供一种形成电磁干扰屏蔽层的方法和用于所述方法的基带，且更确切地说，提供一种在具有下表面(在下表面上形成多个焊料球)的BGA半导体封装的上表面和侧表面上形成用于阻挡EMI的屏蔽层的方法以及在所述方法中使用的基带。该方法包括：提供球栅阵列半导体封装；提供基带；通过抵着基带按压球栅阵列半导体封装；通过在封装‑带组合件上溅镀导电层；从封装‑带组合件移除基带。根据形成BGA半导体封装的EMI屏蔽层的方法，可以通过使用基带在BGA半导体封装上快速地、容易地且有效地形成EMI屏蔽层，由此不仅提高过程效率而且显着减少制造成本。

Description

形成电磁干扰屏蔽层的方法和用于所述方法的基带
相关申请的交叉引用
本申请主张2015年5月19日向韩国知识产权局提交的第10-2015-0069520号韩国专利申请的权益，所述申请的公开内容以全文引用的方式并入本文中。
技术领域
一个或多个实施例涉及一种形成球栅阵列(ball grid array，BGA)半导体封装的电磁干扰(electromagnetic interference，EMI)屏蔽层的方法以及在所述方法中使用的基带，且更确切地说，涉及一种在具有下表面(在下表面上形成多个焊料球)的BGA半导体封装的上表面和侧表面上形成用于阻挡EMI的屏蔽层的方法以及在所述方法中使用的基带。
背景技术
半导体封装通常在其外表面上包含电磁干扰(electromagneticinterference，EMI)屏蔽层以防止电磁波的发射或外部电磁波对其内部电路的损坏。
根据相关技术，通过用液体粘合剂涂布托盘以使用挤压形成具有均匀厚度的层，且接着通过将半导体封装安置在托盘上并将所述半导体封装粘附到托盘来形成屏蔽层。在将半导体封装粘附到托盘时，在半导体封装上执行溅镀，从而在半导体封装的上表面和侧表面上形成EMI屏蔽层(除半导体封装的下表面外)。当完成溅镀时，将半导体封装与托盘分离以完成屏蔽层的形成。
在如相关技术的形成EMI屏蔽层的方法中，会使用用于用液体粘合剂涂布托盘的设备和用于将半导体封装粘附到托盘并使其硬化的设备。然而，设备是非常昂贵的，因此根据相关技术形成EMI屏蔽层的方法的成本也非常高。另外，所述方法包含在托盘的粘合剂上涂布脱模剂以促进粘合剂与半导体封装的分离的操作，这使得整个方法复杂并增加了成本。
发明内容
一个或多个实施例包含一种形成球栅阵列(ball grid array，BGA)半导体封装的电磁干扰(electromagnetic interference，EMI)屏蔽层的方法以及在所述方法中使用的基带，使用所述方法可以有效地形成EMI屏蔽层，可以简化过程并且可以减少制造成本。
其它方面将部分在以下描述中得到阐述，并且部分地，将从描述中显而易见，或者可以通过对所呈现的实施例的实践习得。
根据一个或多个实施例，一种在BGA半导体封装的外表面上形成所述BGA半导体封装的EMI屏蔽层以屏蔽EMI的方法包含：(a)提供BGA半导体封装，所述BGA半导体封装具有在其上形成多个焊料球的下表面；(b)提供基带，所述基带具有比焊料球的高度更厚且由弹性粘合材料形成的附着部分；(c)通过抵着基带按压BGA半导体封装，使得BGA半导体封装的多个焊料球陷入基带的附着部分中并且BGA半导体封装粘附到基带，形成封装-带组合件；(d)通过在封装-带组合件上溅镀导电层，在BGA半导体封装上形成EMI屏蔽层；以及(e)从封装-带组合件移除基带。
另外，可以在上述形成BGA半导体封装的EMI屏蔽层的方法中使用基带。
附图说明
通过结合附图对实施例进行的以下描述，这些和/或其它方面将变得显而易见并且更加容易了解，在所述附图中：
图1是在根据本发明概念的实施例的形成球栅阵列(ball grid array，BGA)半导体封装的电磁干扰(electromagnetic interference，EMI)屏蔽层的方法中使用的BGA半导体封装的实例的透视图。
图2到图5是描述根据本发明概念的实施例通过使用图1中示出的BGA半导体封装形成BGA半导体封装的EMI屏蔽层的方法的视图。
图6和图7是描述根据本发明概念的另一实施例通过使用图1中示出的BGA半导体封装形成BGA半导体封装的EMI屏蔽层的方法的视图。
具体实施方式
下文将参考附图更充分地描述一种根据本发明概念的实施例的形成球栅阵列(ball grid array，BGA)半导体封装的电磁干扰(electromagneticinterference，EMI)屏蔽层的方法，在所述附图中示出了本申请的示例性实施例。
首先，将描述一种根据本发明概念的实施例的形成BGA半导体封装的EMI屏蔽层的方法。
图1是在根据本发明概念的实施例的形成BGA半导体封装的EMI屏蔽层的方法中使用的BGA半导体封装10的实例的透视图。图2到图5是描述根据本发明概念的实施例通过使用图1中示出的BGA半导体封装10形成BGA半导体封装10的EMI屏蔽层的方法的视图。
根据本发明概念的BGA半导体封装10具有如图1中所示的结构。图1是其中BGA半导体封装10转成倒置以便示出其下表面和BGA半导体封装10的焊料球11的透视图。如图1中所示，多个焊料球11安装在BGA半导体封装10的下表面上。EMI被阻挡，因为除在其上形成焊料球11的BGA半导体封装10的下表面外，在BGA半导体封装10的上表面和侧表面上形成导电层。为了形成如上文所描述的EMI屏蔽层，除BGA半导体封装10的在其上形成焊料球11的下表面外，在BGA半导体封装10的其它表面上形成导电层，所述导电层同时覆盖BGA半导体封装10的下表面。
首先，在步骤(a)中，如图1中所示，提供具有在其上形成多个焊料球11的下表面的BGA半导体封装10。BGA半导体封装10提供为制成品。
接着，在步骤(b)中，如图2中所示，提供具有由弹性粘合材料形成的附着部分21的基带20。参考图3，基带20的附着部分21的厚度大于BGA半导体封装10的焊料球11的高度。基带20的附着部分21可以由相对软的粘合材料形成。由于附着部分21的厚度大于焊料球11的高度，因此附着部分21可以完全包围焊料球11并且同时接触待粘附到其上的BGA半导体封装10的下表面。
当如上提供了BGA半导体封装10和基带20时，在步骤(c)中，如图3中所示，抵着基带20按压BGA半导体封装10以便将BGA半导体封装10附着到基带20。由于基带20的附着部分21具有软质特性，因此附着部分21被BGA半导体封装10的焊料球11弹性地和/或塑性地变形，使得焊料球11陷入附着部分21中。也就是说，焊料球11钻入附着部分21中以被附着部分21包围，并且BGA半导体封装10的下表面粘附到基带20。也就是说，BGA半导体封装10的下表面和焊料球11粘附到基带20的附着部分21，由此从外面被阻挡。当以适当的力将BGA半导体封装10按压到预定深度时，如上文所描述，焊料球11的整个外表面被基带20的附着部分21完全包围，并且BGA半导体封装10的下表面接触附着部分21。附着部分21基本上弹性地变形但是在预定阈值点(threshold point)之后接着塑性变形，以便更完全地覆盖焊料球11以及无缝地覆盖BGA半导体封装10的下表面。
如上文所描述，在步骤(d)中，通过在将基带20粘附到BGA半导体封装10而形成的封装-带组合件100上执行溅镀，在BGA半导体封装10上形成EMI屏蔽层31，如图4中所示。基带20的附着部分21由化学性能稳定且耐溅镀温度的材料形成，因此，仅在BGA半导体封装10的上表面和侧表面上而不在BGA半导体封装10的下表面上形成导电EMI屏蔽层31。因此，防止了BGA半导体封装10的焊料球11电连接到彼此并导致故障的可能性。
当如上文所描述完成在封装-带组合件100上形成EMI屏蔽层31的过程时，在步骤(e)中，如图5中所示，从封装-带组合件100移除基带20。取决于附着部分21的材料，可以使用各种方法来移除基带20。根据附着部分21的材料，可以通过对基带20加压且接着在使BGA半导体封装10处于固定状态时拉出基带20而从BGA半导体封装10移除基带20。替代地，可以通过对基带20加热使得附着部分21变软并已减弱粘附力来撕掉基带20。根据各种情况，可以将基带20加热到较高温度，使得附着部分21被熔化以自发地与BGA半导体封装10分离。
接下来，将参考图6和图7描述根据本发明概念的另一实施例的形成BGA半导体封装的EMI屏蔽层的方法。
根据图6和图7的实施例的形成BGA半导体封装的EMI屏蔽层的方法与形成BGA半导体封装10的EMI屏蔽层31的方法的不同之处在于，如图6和图7中所示，使用具有带球孔42的附着部分41的基带40。
根据图6和图7的实施例的方法的步骤(a)与根据先前实施例的形成BGA半导体封装的EMI屏蔽层的方法的步骤(a)相同。
根据图6和图7的实施例的形成BGA半导体封装的EMI屏蔽层的方法，在步骤(b)中，如图6中所示，使用在对应于BGA半导体封装10的焊料球11的位置处具有球孔42的附着部分41。相较于平面的环境，附着部分41的球孔42形成为凹面的，或根据各种情况可以具有与BGA半导体封装10的下表面上的焊料球11的形状相对应的形状。
在步骤(c)中，在将BGA半导体封装10的焊料球11安置为分别面对附着部分41的球孔42时，可以通过使用基带40抵着附着部分41按压BGA半导体封装10，以便形成如图7中所示的封装-带组合件200。在这种情况下，如图7中所示，围绕球孔42的附着部分41可以并非完全包围焊料球11。同样在这种情况下，基带40的附着部分41相对于外界完全密闭地密封BGA半导体封装10的下表面，因此，即使当在步骤(d)中形成了EMI屏蔽层31时，EMI屏蔽层31也不会形成于BGA半导体封装10的下表面上。
当完成形成EMI屏蔽层31的步骤(d)时，在步骤(e)中移除基带40以完成根据图6和图7的实施例的形成BGA半导体封装的EMI屏蔽层的方法。
根据形成BGA半导体封装的EMI屏蔽层的方法，可以通过使用基带在BGA半导体封装上快速地、容易地且有效地形成EMI屏蔽层，由此不仅提高过程效率而且显着减少成本。
应理解，本文中所描述的示例性实施例应被视为仅具有描述性意义，而非出于限制的目的。每一个实施例内的特征或方面的描述通常应被视为可用于其它实施例中的其它类似特征或方面。
最后应说明的是：以上各实施例仅用以说明本发明的技术方案，而非对其限制；尽管参照前述各实施例对本发明进行了详细的说明，本领域的普通技术人员应当理解：其依然可以对前述各实施例所记载的技术方案进行修改，或者对其中部分或者全部技术特征进行等同替换；而这些修改或者替换，并不使相应技术方案的本质脱离本发明各实施例技术方案的范围。

Claims (6)

1.一种形成球栅阵列半导体封装的电磁干扰屏蔽层的方法，所述方法包括：
(a)提供球栅阵列半导体封装，所述球栅阵列半导体封装具有下表面，所述下表面上形成有多个焊料球；
(b)提供基带，所述基带具有比所述焊料球的高度更厚且由弹性粘合材料形成的附着部分；
(c)通过抵着所述基带按压所述球栅阵列半导体封装，使得所述球栅阵列半导体封装的所述多个焊料球陷入所述基带的所述附着部分中，并且所述球栅阵列半导体封装粘附到所述基带，形成封装-带组合件；
(d)通过在所述封装-带组合件上溅镀导电层，在所述球栅阵列半导体封装上形成电磁干扰屏蔽层；以及
(e)从所述封装-带组合件移除所述基带。
2.根据权利要求1所述的方法，其中在(c)中，抵着所述基带按压所述球栅阵列半导体封装，使得所述焊料球的全部外表面被所述基带的所述附着部分包围，并且所述球栅阵列半导体封装的所述下表面接触所述基带的所述附着部分。
3.根据权利要求1所述的方法，其中在(c)期间所述基带的所述附着部分弹性地且塑性地变形，以便覆盖所述球栅阵列半导体封装的所述焊料球的全部并且粘附到所述球栅阵列半导体封装的所述下表面。
4.根据权利要求1所述的方法，其中在(e)中，对所述封装-带组合件加热以将所述基带从所述球栅阵列半导体封装分离。
5.根据权利要求3所述的方法，其中在(b)中，在所述基带的所述附着部分中在分别对应于所述球栅阵列半导体封装的所述焊料球的位置处形成凹面的球孔，
其中在(c)中，通过抵着所述附着部分按压所述球栅阵列半导体封装同时将所述球栅阵列半导体封装的所述焊料球安置为分别面对所述附着部分的所述球孔来形成所述封装-带组合件。
6.一种在权利要求1所述的方法中使用的基带。
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