TWI617934B - 資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法 - Google Patents
資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法 Download PDFInfo
- Publication number
- TWI617934B TWI617934B TW105123797A TW105123797A TWI617934B TW I617934 B TWI617934 B TW I617934B TW 105123797 A TW105123797 A TW 105123797A TW 105123797 A TW105123797 A TW 105123797A TW I617934 B TWI617934 B TW I617934B
- Authority
- TW
- Taiwan
- Prior art keywords
- pattern
- mask
- substrate
- gap
- etching
- Prior art date
Links
- 239000000758 substrate Substances 0.000 title claims abstract description 186
- 238000007689 inspection Methods 0.000 title claims description 50
- 238000000034 method Methods 0.000 title claims description 17
- 238000005530 etching Methods 0.000 claims abstract description 172
- 238000013461 design Methods 0.000 claims abstract description 88
- 238000012937 correction Methods 0.000 claims abstract description 64
- 239000004020 conductor Substances 0.000 claims description 54
- 230000007246 mechanism Effects 0.000 claims description 36
- 238000012360 testing method Methods 0.000 claims description 30
- 230000008859 change Effects 0.000 claims description 24
- 238000004519 manufacturing process Methods 0.000 claims description 13
- 230000007547 defect Effects 0.000 claims description 12
- 238000013500 data storage Methods 0.000 claims description 9
- 238000005259 measurement Methods 0.000 claims description 7
- 238000001514 detection method Methods 0.000 claims description 5
- 238000012545 processing Methods 0.000 description 46
- 238000010586 diagram Methods 0.000 description 22
- 229920002120 photoresistant polymer Polymers 0.000 description 21
- 238000003860 storage Methods 0.000 description 12
- 238000006243 chemical reaction Methods 0.000 description 7
- 230000008569 process Effects 0.000 description 7
- 238000011161 development Methods 0.000 description 6
- 230000018109 developmental process Effects 0.000 description 6
- 230000006870 function Effects 0.000 description 6
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 description 2
- 230000015572 biosynthetic process Effects 0.000 description 2
- 238000004891 communication Methods 0.000 description 2
- 229910052802 copper Inorganic materials 0.000 description 2
- 239000010949 copper Substances 0.000 description 2
- 238000003384 imaging method Methods 0.000 description 2
- 239000000463 material Substances 0.000 description 2
- 238000009877 rendering Methods 0.000 description 2
- 238000001039 wet etching Methods 0.000 description 2
- 238000004364 calculation method Methods 0.000 description 1
- 238000005520 cutting process Methods 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 238000002474 experimental method Methods 0.000 description 1
- 239000011521 glass Substances 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 230000003287 optical effect Effects 0.000 description 1
- 230000007261 regionalization Effects 0.000 description 1
- 239000004065 semiconductor Substances 0.000 description 1
- 238000004088 simulation Methods 0.000 description 1
- 238000005507 spraying Methods 0.000 description 1
- 238000012546 transfer Methods 0.000 description 1
Classifications
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/70—Adapting basic layout or design of masks to lithographic process requirements, e.g., second iteration correction of mask patterns for imaging
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F1/00—Originals for photomechanical production of textured or patterned surfaces, e.g., masks, photo-masks, reticles; Mask blanks or pellicles therefor; Containers specially adapted therefor; Preparation thereof
- G03F1/68—Preparation processes not covered by groups G03F1/20 - G03F1/50
- G03F1/80—Etching
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/20—Exposure; Apparatus therefor
- G03F7/2002—Exposure; Apparatus therefor with visible light or UV light, through an original having an opaque pattern on a transparent support, e.g. film printing, projection printing; by reflection of visible or UV light from an original such as a printed image
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70483—Information management; Active and passive control; Testing; Wafer monitoring, e.g. pattern monitoring
- G03F7/70605—Workpiece metrology
- G03F7/70616—Monitoring the printed patterns
- G03F7/70625—Dimensions, e.g. line width, critical dimension [CD], profile, sidewall angle or edge roughness
-
- G—PHYSICS
- G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
- G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
- G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
- G03F7/70—Microphotolithographic exposure; Apparatus therefor
- G03F7/70691—Handling of masks or workpieces
-
- H—ELECTRICITY
- H05—ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
- H05K—PRINTED CIRCUITS; CASINGS OR CONSTRUCTIONAL DETAILS OF ELECTRIC APPARATUS; MANUFACTURE OF ASSEMBLAGES OF ELECTRICAL COMPONENTS
- H05K3/00—Apparatus or processes for manufacturing printed circuits
- H05K3/02—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding
- H05K3/06—Apparatus or processes for manufacturing printed circuits in which the conductive material is applied to the surface of the insulating support and is thereafter removed from such areas of the surface which are not intended for current conducting or shielding the conductive material being removed chemically or electrolytically, e.g. by photo-etch process
Landscapes
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Engineering & Computer Science (AREA)
- Manufacturing & Machinery (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing Of Printed Circuit Boards (AREA)
- Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Applications Claiming Priority (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
JP2015-187980 | 2015-09-25 | ||
JP2015187980A JP6663672B2 (ja) | 2015-09-25 | 2015-09-25 | データ補正装置、描画装置、配線パターン形成システム、検査装置、データ補正方法および配線基板の製造方法 |
Publications (2)
Publication Number | Publication Date |
---|---|
TW201717076A TW201717076A (zh) | 2017-05-16 |
TWI617934B true TWI617934B (zh) | 2018-03-11 |
Family
ID=58385958
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
TW105123797A TWI617934B (zh) | 2015-09-25 | 2016-07-27 | 資料修正裝置、描繪裝置、配線圖案形成系統、檢查裝置、資料修正方法及配線基板之製造方法 |
Country Status (5)
Country | Link |
---|---|
JP (1) | JP6663672B2 (ja) |
KR (1) | KR102082583B1 (ja) |
CN (1) | CN108029196B (ja) |
TW (1) | TWI617934B (ja) |
WO (1) | WO2017051599A1 (ja) |
Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768958B2 (en) * | 2002-11-26 | 2004-07-27 | Lsi Logic Corporation | Automatic calibration of a masking process simulator |
CN1535104A (zh) * | 2002-12-26 | 2004-10-06 | 株式会社东芝 | 印刷布线板制造装置以及印刷布线板制造方法 |
JP2005116942A (ja) * | 2003-10-10 | 2005-04-28 | Fuji Photo Film Co Ltd | 製造支援システムおよびプログラム |
US20070204242A1 (en) * | 2006-02-17 | 2007-08-30 | Mentor Graphics Corporation | Gate modeling for semiconductor fabrication process effects |
Family Cites Families (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
JPH07302824A (ja) * | 1994-05-09 | 1995-11-14 | Sony Corp | パターン層の位置測定方法並びにテストパターン層及びその形成方法 |
JP3883706B2 (ja) * | 1998-07-31 | 2007-02-21 | シャープ株式会社 | エッチング方法、及び薄膜トランジスタマトリックス基板の製造方法 |
KR101678070B1 (ko) * | 2009-12-24 | 2016-11-22 | 삼성전자 주식회사 | 마스크리스 노광장치 및 그 제어방법 |
JP5503992B2 (ja) * | 2010-02-08 | 2014-05-28 | 株式会社オーク製作所 | 露光装置 |
JP6491974B2 (ja) * | 2015-07-17 | 2019-03-27 | 日立化成株式会社 | 露光データ補正装置、配線パターン形成システム、及び配線基板の製造方法 |
-
2015
- 2015-09-25 JP JP2015187980A patent/JP6663672B2/ja not_active Expired - Fee Related
-
2016
- 2016-07-20 CN CN201680055055.XA patent/CN108029196B/zh not_active Expired - Fee Related
- 2016-07-20 KR KR1020187006007A patent/KR102082583B1/ko active IP Right Grant
- 2016-07-20 WO PCT/JP2016/071306 patent/WO2017051599A1/ja active Application Filing
- 2016-07-27 TW TW105123797A patent/TWI617934B/zh not_active IP Right Cessation
Patent Citations (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US6768958B2 (en) * | 2002-11-26 | 2004-07-27 | Lsi Logic Corporation | Automatic calibration of a masking process simulator |
CN1535104A (zh) * | 2002-12-26 | 2004-10-06 | 株式会社东芝 | 印刷布线板制造装置以及印刷布线板制造方法 |
JP2005116942A (ja) * | 2003-10-10 | 2005-04-28 | Fuji Photo Film Co Ltd | 製造支援システムおよびプログラム |
US20070204242A1 (en) * | 2006-02-17 | 2007-08-30 | Mentor Graphics Corporation | Gate modeling for semiconductor fabrication process effects |
Also Published As
Publication number | Publication date |
---|---|
JP6663672B2 (ja) | 2020-03-13 |
WO2017051599A1 (ja) | 2017-03-30 |
CN108029196B (zh) | 2020-07-28 |
CN108029196A (zh) | 2018-05-11 |
TW201717076A (zh) | 2017-05-16 |
KR20180031776A (ko) | 2018-03-28 |
KR102082583B1 (ko) | 2020-02-27 |
JP2017063131A (ja) | 2017-03-30 |
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MM4A | Annulment or lapse of patent due to non-payment of fees |