TWI617607B - Led之反光板用熱硬化性聚矽氧樹脂組成物以及使用其之led用反光板及光半導體裝置 - Google Patents
Led之反光板用熱硬化性聚矽氧樹脂組成物以及使用其之led用反光板及光半導體裝置 Download PDFInfo
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- TWI617607B TWI617607B TW102113307A TW102113307A TWI617607B TW I617607 B TWI617607 B TW I617607B TW 102113307 A TW102113307 A TW 102113307A TW 102113307 A TW102113307 A TW 102113307A TW I617607 B TWI617607 B TW I617607B
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- ZNOCGWVLWPVKAO-UHFFFAOYSA-N trimethoxy(phenyl)silane Chemical compound CO[Si](OC)(OC)C1=CC=CC=C1 ZNOCGWVLWPVKAO-UHFFFAOYSA-N 0.000 description 1
- BPSIOYPQMFLKFR-UHFFFAOYSA-N trimethoxy-[3-(oxiran-2-ylmethoxy)propyl]silane Chemical compound CO[Si](OC)(OC)CCCOCC1CO1 BPSIOYPQMFLKFR-UHFFFAOYSA-N 0.000 description 1
- 239000005051 trimethylchlorosilane Substances 0.000 description 1
- PQDJYEQOELDLCP-UHFFFAOYSA-N trimethylsilane Chemical compound C[SiH](C)C PQDJYEQOELDLCP-UHFFFAOYSA-N 0.000 description 1
- LENZDBCJOHFCAS-UHFFFAOYSA-N tris Chemical compound OCC(N)(CO)CO LENZDBCJOHFCAS-UHFFFAOYSA-N 0.000 description 1
- 229940088594 vitamin Drugs 0.000 description 1
- 229930003231 vitamin Natural products 0.000 description 1
- 239000002699 waste material Substances 0.000 description 1
- 229910052882 wollastonite Inorganic materials 0.000 description 1
- 239000010456 wollastonite Substances 0.000 description 1
- 238000004383 yellowing Methods 0.000 description 1
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Abstract
本發明之目的在於提供可給予耐熱、耐光性優異,光對外部的洩漏亦少之硬化物的熱硬化性樹脂組成物,由該組成物所成形之LED用反光板,及使用該LED用反光板之光半導體裝置。
本發明的解決手段為一種LED之反光板用熱硬化性聚矽氧樹脂組成物,其特徵為含有:(A)熱硬化性樹脂,(B)由氧化鈦、氧化鋅、氧化鋯、氧化鎂、碳酸鋇、矽酸鎂、硫酸鋅、硫酸鋇中選出的至少1種白色顏料,(C)至少含有下述(C-1)成分及下述(C-2)成分之(B)成分以外的無機質填充材,其中(C-1)係平均粒徑為30μm~100μm,且折射率與前述(A)成分的熱硬化性樹脂之硬化物的折射率之差為0.05以上的至少1種無機質填充材,(C-2)係平均粒徑未達30μm之至少1種無機質填充材。
Description
本發明關於用於成形LED用反光板之熱硬化性樹脂組成物以及使用其之LED用反光板及光半導體裝置。
LED(發光二極體)等之光半導體元件係變成利用作為街頭顯示器或汽車燈、住宅用照明等種種的指示器或光源。作為LED用反光板材料,大量使用聚苯二甲醯胺樹脂(PPA)等之熱塑性樹脂。又,最近以酸酐作為硬化劑的環氧樹脂等亦使用作為反光板用材料。
可使用聚矽氧樹脂或環氧樹脂等之熱硬化性樹脂作為LED用反光板材料者係已經記載於專利文獻1~5、7~9中。又,專利文獻6中記載矩陣陣列型反光板。專利文獻1~3中記載環氧樹脂或聚矽氧樹脂,但關於樹脂本身,並沒有詳細的記述。
另一方面,最近作為液晶電視的背光或一般照明用光源,LED元件的高亮度化係急速進展,此用途對
於LED的可靠性或耐久性之要求亦嚴格,以往作為反光板材料使用之液晶聚合物或PPA(聚苯二甲醯胺)等之熱塑性樹脂,或環氧樹脂等之熱硬化性樹脂,在同時遭受熱與光之環境下,劣化係激烈,由於樹脂變色而光之反射率降低,發生無法作為反光板使用之問題。
以往,作為此種的反光板用樹脂組成物之填充材,熟知純度高的熔融矽石或氧化鋁等。一般地,反光板係不僅可高效地將光反射,而且白色度必須高。氧化鋁由於是非常硬的材料,於混煉樹脂組成物時,因氧化鋁與混煉裝置之磨耗而被黑污染。因此,以僅高填充氧化鋁等之硬填充材的樹脂組成物,非常難以製造反射率高之反光板。又,由於純度高的氧化鋁等亦價格高,當作為反光板時,亦有成本變高之問題點。
又,當以熱硬化性樹脂組成物所成形的反光板之壁厚度為薄,亦發生自發光元件所發出的光洩漏至外部等的不良狀況。
[專利文獻1]特開平2006-156704號公報
[專利文獻2]特開2007-329219號公報
[專利文獻3]特開2007-329249號公報
[專利文獻4]特開2008-189827號公報
[專利文獻5]特開2006-140207號公報
[專利文獻6]特開2007-235085號公報
[專利文獻7]特開2007-297601號公報
[專利文獻8]特開2009-21394號公報
[專利文獻9]特開2009-155415號公報
本發明係鑒於上述情事而完成者,目的在於提供可給予耐熱、耐光性優異,光對外部的洩漏亦少之硬化物的熱硬化性樹脂組成物,以該組成物所成形之LED用反光板,及使用該LED用反光板之光半導體裝置。
為了解決上述問題,依照本發明,提供LED之反光板用熱硬化性聚矽氧樹脂組成物,其特徵為含有:
(A)熱硬化性樹脂 100質量份
(B)由氧化鈦、氧化鋅、氧化鋯、氧化鎂、碳酸鋇、矽酸鎂、硫酸鋅、硫酸鋇中選出的至少1種之白色顏料 3~200質量份
(C)至少含有下述(C-1)成分及下述(C-2)成分之前述(B)成分以外的無機質填充材 200~1300質量份
(C-1)平均粒徑為30μm~100μm,且折射率與前述(A)成分的熱硬化性樹脂之硬化物的折射率之差為0.05以上的至少1種無機質填充材 100~1000質量份
(C-2)平均粒徑未達30μm的至少1種無機質填充材100~800質量份。
如此的LED之反光板用熱硬化性聚矽氧樹脂組成物,係成為可給予耐熱、耐光性優異,光對外部的洩漏亦少之硬化物的熱硬化性樹脂組成物。特別地成為可給予適合作為矩陣陣列狀之反光板的硬化物之組成物。即,形成有使用如此的熱硬化性樹脂組成物所成形之矩陣陣列狀反光板的反光基板,由於基板的翹曲少,可容易地進行將發光元件(LED元件)搭載密封後之切割等,更且於切割後,可得到反光板表面或元件表面與密封樹脂之剝離不良經抑制的光半導體裝置(LED裝置)。
又此時,前述(A)成分之熱硬化性樹脂較佳為環氧樹脂、聚矽氧樹脂及環氧‧聚矽氧混合樹脂中的任一者。
如此地,前述(A)成分之熱硬化性樹脂係沒有特別的限定,但可舉出此等者作為代表。
又,前述(C-1)成分之無機質填充材較佳為(C-1)成分之無機質填充材係方英石、矽酸鋁、氧化鋁及稀土類之氧化物中的任一者以上。
前述(C-1)成分若為此等者,則成為可給予光對外部的洩漏亦進一步少的硬化物之熱硬化性樹脂組成物。
另外此時,前述(C)成分之(C-1)、(C-2)成分中的至少一者較佳為球狀。
(C)成分之無機質填充材的形狀係沒有特別的問題,但為了盡量減少高填充化或與混煉裝置之磨耗,較佳為球狀,更佳為球形度係0.7~1.0者。
還有此時,前述LED之反光板用熱硬化性聚矽氧樹脂組成物較佳為藉由縮合反應或氫矽烷化反應進行硬化。
如此地,作為本發明之熱硬化性樹脂,可舉出以縮合反應進行硬化型,或以含有烯基的聚矽氧樹脂與含有氫矽烷基的聚矽氧樹脂之加成反應進行硬化型等。
又,於本發明中,提供LED用反光板,其特徵為由前述LED之反光板用熱硬化性聚矽氧樹脂組成物所成形者。
將本發明的熱硬化性樹脂組成物成形而得之LED用反光板,係成為耐熱、耐光性優異,光對外部的洩漏亦少者。
再者,形成有使用前述熱硬化性樹脂組成物所成形之矩陣型凹型反光板的反光基板,係成為基板的翹曲少者。
又,於本發明中,提供光半導體裝置,其特徵為使用上述本發明的LED用反光板。
使用前述LED用反光板之光半導體裝置,係成為反光板表面或元件表面與密封樹脂之剝離不良經抑制的光半導體裝置。
本發明的熱硬化性樹脂組成物係成為可給予耐熱、耐光性優異,光對外部的洩漏亦少,特別適合作為矩陣陣列狀的反光板之硬化物的熱硬化性樹脂組成物。
尤其是形成有使用如此的熱硬化性樹脂組成物所成形之矩陣陣列狀反光板之反光基板,由於基板的翹曲少,可容易地進行將發光元件搭載及密封後之切割等,更且於切割後,可得到反光板表面或元件表面與密封樹脂之剝離不良經抑制的光半導體裝置(LED裝置)。
1‧‧‧矩陣型凹型反光板
1’‧‧‧矩陣型平面型反光板
2‧‧‧晶粒墊
3‧‧‧發光元件(LED元件)
4‧‧‧金線
5‧‧‧引線框
6‧‧‧透明聚矽氧樹脂
10‧‧‧矩陣型凹型反光基板
10’‧‧‧矩陣型平面型反光基板
100‧‧‧光半導體裝置(LED裝置)
101‧‧‧單片型反光板
102‧‧‧引線框
圖1之(A)係形成有使用本發明的熱硬化性樹脂組成物所成形之矩陣型凹型反光板的反光基板之斜視圖,(B)係使用該反光基板所製造的光半導體裝置之上視圖及截面圖。
圖2之(A)係形成有使用本發明的熱硬化性樹脂組成物所成形之矩陣型平面型反光板的反光基板之上視圖,(B)係搭載‧密封有發光元件的反光基板之截面圖。
圖3係使用本發明的熱硬化性樹脂組成物所成形的單片型反光板之截面圖及上視圖。
以下,更詳細說明本發明。
如前述,要求可給予耐熱、耐光性優異,光對外部的洩漏亦少之硬化物的用於成形LED用反光板之反光板材料。
本發明者們為了達成上述目的,重複任意的檢討,結果得知當構成用於成形LED用反光板的熱硬化性樹脂組成物之硬化性樹脂的硬化物與填充材之折射率接近時,自收納於反光板內部的LED元件所發出的光係容易洩漏至外部。另一方面,得知當製造、使用單面成形的矩陣陣列型反光板時,為了改善成形品之翹曲,相對於熱硬化性樹脂100質量份,必須填充200~1300質量份的無機質填充材。
一般地,藉由填充粒徑為50μm以上、較佳100μm左右之填充材而可能高填充化者,係在半導體的密封樹脂組成物中眾所周知。然而,查明於收納LED元件的凹型形狀之反光板材料中,填充可高填充的填充材時,若壁厚為200μm左右,則粒徑100μm左右之填充材存在,由於與樹脂之折射率接近,光容易洩漏至外部。
基於上述見解,本發明者們發現作為LED用反光板材料,為了防止漏光,若為使用具有如以下之2種類的粒度分布之無機質填充材的熱硬化性樹脂組成物,則成為可給予耐熱、耐光性優異,光對外部的洩漏亦少之硬化物的用於成形LED用反光板之熱硬化性樹脂組成物。
即,本發明者們發現以下之LED之反光板用熱硬化性聚矽氧樹脂組成物係適用作為LED用反光板材
料,該組成物之特徵為含有:
(A)熱硬化性樹脂 100質量份
(B)由氧化鈦、氧化鋅、氧化鋯、氧化鎂、碳酸鋇、矽酸鎂、硫酸鋅、硫酸鋇中選出的至少1種之白色顏料 3~200質量份
(C)至少含有下述(C-1)成分及下述(C-2)成分之(B)成分以外的無機質填充材 200~1300質量份
(C-1)平均粒徑為30μm~100μm,且折射率與前述(A)成分的熱硬化性樹脂之硬化物的折射率之差為0.05以上的至少1種無機質填充材 100~1000質量份
(C-2)平均粒徑未達30μm的至少1種無機質填充材 100~800質量份。
以下,更詳細說明本發明。
(A)熱硬化性樹脂
作為本發明的LED之反光板用熱硬化性聚矽氧樹脂組成物中之(A)成分的熱硬化性樹脂,並沒有特別的限定,但以由環氧樹脂、聚矽氧樹脂、環氧樹脂與聚矽氧樹脂所成之混合物(環氧‧聚矽氧混合樹脂)等為代表。
作為環氧樹脂,一般使用酸酐硬化型的環氧樹脂。作為環氧樹脂,亦可使用甲酚酚醛清漆型、苯酚酚醛清漆型、雙酚A型、聯苯型等的環氧樹脂、脂環式環氧樹脂等任何者。
又,作為環氧樹脂,從耐熱、耐光性之面來
看,宜為三衍生物環氧樹脂。三衍生物環氧樹脂係抑制熱硬化性樹脂組成物的硬化物之變黃,而且實現經時劣化少之半導體發光裝置。作為該三衍生物環氧樹脂,較佳為1,3,5-三核衍生物環氧樹脂。特別地,具有異三聚氰酸酯環之環氧樹脂,係耐光性或電絕緣性優異,相對於1個異三聚氰酸酯環,宜具有2價、更佳3價之環氧基。具體地,可使用三(2,3-環氧基丙基)異三聚氰酸酯、三(α-甲基環氧丙基)異三聚氰酸酯、三(α-甲基環氧丙基)異三聚氰酸酯等。再者,三衍生物環氧樹脂之軟化點較佳為90~125℃。
又,於本發明中,亦可使用以0.6~2.0的環氧基當量/酸酐基當量摻合三衍生物環氧樹脂與酸酐,較佳在抗氧化劑及/或硬化觸媒之存在下反應而得之固形物的粉碎物作為樹脂成分。
酸酐係作為硬化劑作用,為給予耐光性用之非芳香族,而且較佳為不具有雙鍵者,例如可舉出六氫苯二甲酸酐、甲基六氫苯二甲酸酐、三烷基四氫苯二甲酸酐、氫化甲基納狄克酸酐等,於此等之中,較佳為甲基六氫苯二甲酸酐。此等之酸酐系硬化劑係可單獨使用1種類,而且也可併用2種類以上。
於酸酐系硬化劑之配合量中,相對於上述三衍生物環氧樹脂之環氧基1當量,酸酐基為0.6~2.0當量,較佳為1.0~2.0當量,更佳為1.2~1.6當量。若為0.6當量以上,則沒有發生硬化不良、可靠性降低之虞而
較佳。又,若為2.0當量以下,則沒有未反應硬化劑殘留於硬化物中,使所得之硬化物的耐濕性惡化之虞而較佳。
再者,作為本發明的熱硬化性樹脂組成物中之(A)成分的熱硬化性樹脂,可舉出聚矽氧樹脂。
作為熱硬化性聚矽氧樹脂,可舉出藉由縮合反應或氫矽烷化反應而硬化者。下述所示者為代表。
(1)藉由縮合反應之硬化型
R1 aSi(OR2)b(OH)cO(4-a-b-c)/2 (1)
(式中,R1表示相同或異種之碳數1~20的有機基,R2表示相同或異種之碳數1~4的有機基,a、b、c係0.8≦a≦1.5、0≦b≦0.3、0.001≦c≦0.5,且滿足0.801≦a+b+c<2之數)。
(2)(2-1)含有烯基的聚矽氧樹脂與(2-2)含有氫矽烷基的聚矽氧樹脂之藉由鉑觸媒等的加成反應而硬化之型
(2-1)含有烯基的聚矽氧樹脂
R3 dR4 eR5 f(OR6)gSiO(4-d-e-f-g)/2 (2)
(式中,R3互相獨立地表示不具有烯基及芳基之取代或非取代的一價烴基;R4係芳基,R5係烯基,R6係氫原子、甲基及乙基中的任一者;d為0.4~1.0,e為0~0.5,f為0.05~0.5,g為0~0.5之數,但為滿足d+e+f+g=1.0~2.0之數)。
前述通式(2)所示之含有烯基的聚矽氧樹脂係
以樹脂構造(即三次元網狀構造)之有機聚矽氧烷作為主體。樹脂構造之有機聚矽氧烷較佳為由R8SiO1.5單位、R7 kR8 pSiO單位及R7 qR8 rSiO0.5單位(前述式中,R7係乙烯基或烯丙基,R8係與上述R3及R4同樣之基,較佳為苯基;k為0或1,p為1或2之整數,且滿足k+p=2之數,q為1~3,r為0~2之整數,且滿足q+r=3之數)所構成之有機聚矽氧烷。
樹脂構造之有機聚矽氧烷,當將R8SiO1.5單位當作T單位,將R7 kR8 pSiO單位當作D單位,將R7 qR8 rSiO0.5單位當作M單位時,宜以莫耳比計(D+M)/T=0.01~1,較佳成為0.1~0.5,M/T=0.05~3,更佳成為0.1~0.5之量來構成。又,該有機聚矽氧烷係藉由GPC所測定的聚苯乙烯換算之重量平均分子量宜在500~10,000之範圍。
樹脂構造之有機聚矽氧烷,係除了上述T單位、D單位、M單位,在不損害本發明之效果的範圍內,還可少量更含有其它的二官能性矽氧烷單位、三官能性矽氧烷單位、四官能性矽氧烷單位。
樹脂構造之有機聚矽氧烷,係可藉由將以上述莫耳比組合上述T單位、D單位、M單位之單位源的化合物,例如在酸之存在下進行共水解反應而容易地合成。
作為T單位源,可使用苯基三氯矽烷、苯基三甲氧基矽烷、苯基三乙氧基矽烷、環己基三氯矽烷、環己基三甲氧基矽烷、環己基三乙氧基矽烷、環戊基三氯矽
烷、正丙基三氯矽烷、甲基三氯矽烷、甲基三甲氧基矽烷、甲基三乙氧基矽烷等。
作為D單位源,可使用下述者。
作為M單位源,可使用下述者。
又,為了在硬化物謀求適度的柔軟性或低彈性化,除了上述有機聚矽氧烷,還可適時摻合下述的有機
聚矽氧烷。
作為如此可摻合有機聚矽氧烷,可舉出主鏈由二有機矽氧烷單位(R2SiO2/2單位)之重複所構成,分子鏈兩末端由三有機矽烷氧基(R3SiO1/2單位)所封鎖之具有直鏈狀構造的有機聚矽氧烷(前述式中,R係意味與R3、R4或R5相同之基)。
其中,下述式(3)所示之在兩末端各具有1個以上的乙烯基之直鏈狀有機聚矽氧烷,在25℃的黏度為10~1,000,000mPa‧s、較佳1,000~50,000mPa‧s者,從作業性及硬化性等之觀點來看較佳。黏度例如可藉由旋轉黏度計來測定。該直鏈狀的有機聚矽氧烷亦可在分子鏈中含有少量的支鏈狀構造。
(式中,R3及R4係如上述,R’係R3或R4,h為1、2或3之整數)。
上述式(3)中,x、y及z係滿足1≦x+y+z≦1,000之0或正整數,較佳為5≦x+y+z≦500、更佳為30≦x+y+z≦500,但為滿足0.5<(x+y)/(x+y+z)≦1.0之整數。
作為如此之上述式(3)所示的有機聚矽氧烷,具體地可舉出下述者。
(上述式中,x、y、z係如上述)。
(2-2)含有氫矽烷基的聚矽氧樹脂
下述通式(4)及/或下述平均組成式(5)所示之有機氫聚
矽氧烷
(式中,R9互相獨立地係不具有烯基之取代或非取代的一價烴基,R10係氫,n為1~10之整數)。
R11 iR12 jHkSiO(4-i-j-k)/2 (5)
(式中,R11互相獨立地係不含有烯基及芳基之取代或非取代的一價烴基;R12係芳基,i為0.6~1.5,j為0~0.5,k為0.4~1.0之數,但為滿足i+j+k=1.0~2.5之數)。
作為如此的有機氫聚矽氧烷,可舉出三(二甲基氫矽氧烷基)甲基矽烷、三(二甲基氫矽氧烷基)苯基矽烷、1,1,3,3-四甲基二矽氧烷、1,3,5,7-四甲基環四矽氧烷、兩末端三甲基矽烷氧基封鎖甲基氫聚矽氧烷、兩末端三甲基矽烷氧基封鎖二甲基矽氧烷‧甲基氫矽氧烷共聚物、兩末端二甲基氫矽烷氧基封鎖二甲基矽氧烷‧甲基氫矽氧烷共聚物、兩末端三甲基矽烷氧基封鎖甲基氫矽氧烷‧二苯基矽氧烷共聚物、兩末端三甲基矽烷氧基封鎖甲基氫矽氧烷‧二苯基矽氧烷‧二甲基矽氧烷共聚物、由(CH3)2HSiO1/2單位與SiO4/2單位所成之共聚物、由
(CH3)2HSiO1/2單位與SiO4/2單位和(C6H5)SiO3/2單位所成之共聚物等。
又,亦可使用下述構造所示之有機氫聚矽氧烷。
含有氫矽烷基的聚矽氧樹脂之氫矽烷基的合計當量,相對於(2-1)含有烯基的聚矽氧樹脂中之烯基1當量,較佳為0.5~4.0當量,更佳為0.8~2.0當量,尤佳為0.9~1.5當量。若為0.5當量以上,則沒有加成反應不進行而難以得到硬化物之虞。又,若為4.0當量以下,則
沒有未反應的氫矽烷基大量地殘留在硬化物中而成為物性經時地變化之原因之虞而較佳。
又,亦可使用混合有上述之環氧樹脂與聚矽氧樹脂的混合樹脂(環氧‧聚矽氧混合樹脂)。
(B)白色顏料
於本發明之熱硬化性樹脂組成物中,摻合由氧化鈦、氧化鋅、氧化鋯、氧化鎂、碳酸鋇、矽酸鎂、硫酸鋅、硫酸鋇中選出之白色顏料作為(B)成分。
白色顏料係作為白色著色劑,為了提高白色度而摻合者,此等係可單獨或併用數種而使用。於此等之中,較佳為使用二氧化鈦,此二氧化鈦的單位晶格可為金紅石型、銳鈦礦型、板鈦礦型的任一者。又,平均粒徑或形狀亦沒有限定,平均粒徑通常為0.05~5.0μm,較佳為0.1~2μm。再者,平均粒徑係可作為藉由雷射光繞射法的粒度分布測定之質量平均值D50(或中位直徑)求得。
(B)成分之配合係相對於(A)成分之熱硬化性樹脂成分100質量份而言為3~200份,較佳為5~150份。未達3質量份時,有得不到充分的白色度之情況。又,超過200質量份時,不僅以機械強度升高為目的而添加的其它成分之比例變少,而且成形性會顯著降低。
(C)無機質填充材
本發明之LED之反光板用熱硬化性聚矽氧樹脂組成
物中所含有的(C)成分,係至少含有下述(C-1)成分及下述(C-2)成分之前述(B)成分以外的無機質填充材。即,(C)成分係用於防止漏光之具有至少2種類的粒度分布之無機質填充材。
(C-1)平均粒徑為30μm~100μm,且折射率與前述(A)成分的熱硬化性樹脂之硬化物的折射率之差為0.05以上的至少1種無機質填充材
(C-2)平均粒徑未達30μm,含有前述(C-1)成分以外的至少1種無機質填充材之無機質填充材
<(C-1)成分>
作為(C-1)成分,必須使用平均粒徑為30μm~100μm的無機質填充材,而且該填充材之折射率係與經硬化的(A)成分之熱硬化性樹脂的折射率(用Na原子之D線(亮線光譜)來測定)相距0.05以上者,由所使用的熱硬化性樹脂之折射率來選擇。
使用與經硬化的(A)成分之熱硬化性樹脂的折射率之差未達0.05之折射率的無機質填充材時,光容易穿透硬化樹脂組成物內,光洩漏至外部。
平均粒徑較佳為30~70μm,更佳為35~60μm。此處所謂的平均粒徑,係可作為雷射光繞射法之粒度分布測定的質量平均值D50(或中位直徑)求得。
當(A)成分之熱硬化性樹脂為環氧樹脂時,由於經硬化的環氧樹脂(硬化樹脂)之折射率為1.50~1.55左
右,可舉出具有1.55以上的折射率之氧化鋁、矽酸鋁、鋯石、稀土類之氧化物(氧化釔、氧化鑭)等作為(C-1)成分。
當為(A)成分之熱硬化性樹脂為聚矽氧樹脂或環氧樹脂與聚矽氧樹脂之混合物(環氧‧聚矽氧混合樹脂)時,由於經硬化的樹脂之折射率為1.41~1.53左右,可舉出具有1.47以上之折射率的方英石、氧化鋁、矽酸鋁、鋯石、稀土類之氧化物(氧化釔、氧化鑭)等作為(C-1)成分。
此等無機質填充材之形狀係沒有特別的問題,但為了盡量減少高填充化或與混煉裝置之磨耗,特佳為球狀。球形度較佳為0.7~1.0。
(C-1)成分之填充量係相對於(A)成分之熱硬化性樹脂100質量份而言為100~1000質量份。又,與後述的(C-2)成分之合計量係成為200~1300質量份之量。(C-1)成分之無機質填充材的添加量未達100質量份時,粗粒範圍的粉末係過少而無法高填充化。又,超過1000質量份時,反而粗粒範圍的粉係多,黏度變高而成形性降低。
<(C-2)成分>
另一方面,平均粒徑未達30μm的(C-2)成分之微粉無機質填充材的折射率係沒有特別的限制。較佳的平均粒徑為0.01μm~25μm,更佳為1~20μm,特佳為3~15μm。
(C-2)成分只要是滿足上述平均粒徑之無機質
填充材,則沒有特別的限制,可例示矽石或(C-1)成分所例示之粒徑小者(平均粒徑未達30μm)等,較佳為球狀。由於必須盡可能地減小反光板之價格或與混煉裝置之磨耗所致的污染、硬化樹脂組成物之膨脹係數,較佳為熔融矽石,特佳為形狀之熔融矽石。
(C-2)成分之填充量係相對於(A)成分的熱硬化性樹脂100質量份而言為100~800質量份,較佳為200~600質量份。(C-2)成分未達100質量份時,小粒徑的粒度之粉末過少,在轉移成形或壓縮成形等之成形時,會流動性不足而無法製造反光板,超過800質量份之量時,粉的粒度分布過度偏細,黏度變高而流動性降低。
又,除了上述之無機質填充材,還可使用微粉末矽石、微粉末氧化鋁、氮化矽、氮化鋁、氮化硼、三氧化銻,更且玻璃纖維、矽灰石等之纖維狀無機質填充材。
其它成分
‧黏著助劑
本發明係除了上述(A)~(C)成分,為了改善與引線框等之黏著,還可摻合聚矽氧系黏著助劑、矽烷偶合劑、鈦酸酯偶合劑等之黏著助劑。
作為聚矽氧系黏著助劑,可例示在分子中具有烷氧基與環氧基等之有機官能性基的矽氧烷化合物或在分子中具有氫矽烷基(SiH基)與環氧基等之有機官能性基的矽氧烷
化合物等,作為矽烷偶合劑,例如較宜使用γ-環氧丙氧基丙基三甲氧基矽烷、γ-環氧丙氧基丙基甲基二乙氧基矽烷、β-(3,4-環氧基環己基)乙基三甲氧基矽烷等之環氧官能性烷氧基矽烷、N-β(胺基乙基)-γ-胺基丙基三甲氧基矽烷、γ-胺基丙基三乙氧基矽烷、N-苯基-γ-胺基丙基三甲氧基矽烷等之胺基官能性烷氧基矽烷、γ-巰基丙基三甲氧基矽烷等之巰基官能性烷氧基矽烷等。再者,偶合劑之配合量係相對於(A)成分100質量份而言較佳為0.01~10質量份,特佳為0.1~5質量份。
‧各種添加劑
於本發明之熱硬化性樹脂組成物中,視需要亦可更摻合各種的添加劑。例如,在不損害本發明的效果之範圍內,可添加摻合反應性控制劑、脫模劑、以改善樹脂的性質為目的之各種聚矽氧黏結劑、熱塑性樹脂、熱塑性彈性體、有機合成橡膠等之添加劑。
LED之反光板用熱硬化性聚矽氧樹脂組成物之製造方法
作為本發明的LED之反光板用熱硬化性聚矽氧樹脂組成物之製造方法,例如可將(A)熱硬化性樹脂、(B)白色顏料、(C)無機質填充材、其它添加物等以指定的組成比摻合,藉由混合機等將此充分均勻混合後,進行熱輥、捏合機、擠壓機等所致之熔融混合處理,接著使冷卻固化,粉碎成適當的大小而成為熱硬化性樹脂組成物。
LED用反光板
本發明之熱硬化性樹脂組成物係用於成形LED用反光板之熱硬化性樹脂組成物,作為該反光板的最一般之成形方法,可舉出轉移成形法或壓縮成形法。
於轉移成形法中,使用轉移成形機,較佳以5~20N/mm2的成形壓力、120~190℃的成形溫度、30~500秒的成形時間,特佳以120~180℃的成形溫度、30~300秒的成形時間進行。
於壓縮成形法中,使用壓縮成形機,較佳以120~190℃的成形溫度、30~600秒的成形時間,特佳以120~180℃的成形溫度、120~420秒的成形時間進行。
再者,於任一成形法中皆可在150~185℃進行後硬化2~20小時。
如圖1(A)中所示,可製造形成有使用上述本發明的熱硬化性樹脂組成物所成形之矩陣型凹型反光板1的反光基板10。又,如圖2(A)中所示,可製造形成有使用上述本發明的熱硬化性樹脂組成物所成形之矩陣型平面型反光板1’的反光基板10’。
光半導體裝置
可使用上述之LED用反光板來製造光半導體裝置。
具體地,使用圖1中所示之形成有矩陣型凹型反光板1的反光基板10時,在切斷該矩陣狀反光基板10之前,
於反光基板10之各個凹部(元件搭載區域)所存在的晶粒墊2上,使用聚矽氧晶粒黏合劑(LPS-8445S信越化學工業製)固定發光元件3(LED元件),在150℃加熱1小時而使發光元件3固著。其後,以金線4來電連接發光元件3與引線框5。然後,藉由灌封而使透明聚矽氧樹脂(LPS5547信越化學工業製)或摻合有螢光體等的透明聚矽氧樹脂6等流入反光基板10之凹部,在120℃ 1小時,更且在150℃ 2小時加熱硬化而密封。透明聚矽氧樹脂6之密封係可藉由灌封之方法,或亦可藉由轉移成形或壓縮成型等之密封方法同時地形成透鏡形狀等。
當使用圖2(A)中所示之形成有矩陣型平面型反光板1’的反光基板10’時,在切斷反光基板10’之前,於反光基板10’所存在的各個晶粒墊2上,使用聚矽氧晶粒黏合劑(LPS-8445S信越化學工業製)來固定,在150℃ 1小時加熱而使發光元件(LED元件)3固著。其後,以金線4來電連接發光元件3與引線框5。然後,藉由轉移成形或壓縮成形等,將透明聚矽氧樹脂(LPS-5538信越化學工業製)或摻合有螢光體等的透明聚矽氧樹脂6等,在120℃ 3分鐘的硬化條件下成形密封為透鏡形狀,更且於150℃加熱硬化2小時。圖2(B)中顯示搭載密封有發光元件3的反光基板10’之C-C’截面圖。
然後,任一之搭載密封有發光元件的反光基板10、10’皆被切割、雷射加工、噴水加工等所切斷而單片、單體化,可得到光半導體裝置。圖1(B)中顯示將在凹
部搭載密封有發光元件的反光基板10予以切割而得的光半導體裝置100之上視圖及截面圖。
再者,使用本發明的熱硬化性樹脂組成物來成形為圖3中所示的單片型反光板101,亦毫無問題。102表示引線框。
藉由使用本發明之熱硬化性樹脂組成物所成形的LED用反光板,反光板表面與密封樹脂的透明聚矽氧樹脂之黏著係變強固,而且由於反光板表面之因光所致的劣化亦沒有,故光半導體裝置(LED裝置)之可靠性係顯著升高。
以下,顯示實施例及比較例,具體地說明本發明,惟本發明不受下述的實施例所限制。再者,下述記載中的份表示質量份。
以下顯示實施例、比較例使用之下述表1、2所示的原料之合成例及詳細。
(合成例1)熱硬化性樹脂A1(環氧樹脂)之合成
將三衍生物環氧樹脂(TEPIC-S)45質量份、酸酐(Rikacid MH)55質量份、抗氧化劑(亞磷酸三苯酯)3質量份、催化量的咪唑系觸媒(2E4MZ)預先藉由反應釜,以100℃熔融混合,冷卻而使固化後(軟化點為60℃),粉碎,得到(A)成分之熱硬化性樹脂A1(硬化物的折射率:
1.54)。
再者,使用上述合成例1之各反應原料係如以下。
‧三衍生物環氧樹脂
三(2,3-環氧基丙基)異氰酸酯(TEPIC-S:日產化學(股)製商品名、環氧當量100)
‧酸酐
非碳碳雙鍵酸酐:甲基六氫苯二甲酸酐(Rikacid MH:新日本理化(股)製商品名)
‧抗氧化劑
磷系抗氧化劑:亞磷酸三苯酯(和光純藥(股)製商品名)
‧咪唑系觸媒:2-乙基-4-甲基咪唑(2E4MZ:四國化成(股)製商品名)
‧二氧化鈦:金紅石型(R-45M:堺化學工業(股)製商品名)
(合成例2)熱硬化性樹脂A2(含有矽烷醇基的聚矽氧樹脂)之合成
將甲基三氯矽烷100質量份、甲苯200質量份置入1L的燒瓶中,於冰冷下將水8質量份、異丙醇60質量份之混合液滴下至液中。內溫為-5~0℃,費5~20小時滴下,然後加熱,在回流溫度攪拌20分鐘。然後冷卻至室溫為止,於30℃以下,以30分鐘滴下水12質量份,攪拌20分鐘。再者,於滴下水25質量份後,在40~45℃攪拌60分鐘。然後將水200質量份加入,分離有機層。洗淨
此有機層直到成為中性為止,然後藉由進行共沸脫水、過濾、減壓汽提,得到無色透明的固體(熔點76℃)36.0質量份之熱硬化性樹脂A2。硬化的樹脂之折射率為1.41。
又,除了上述熱硬化性樹脂A1、A2,作為(A)成分的熱硬化性樹脂,還使用以下之含有烯基的聚矽氧樹脂(以下之合成例3所得之A3-1、以下所示的A3-2)及含有氫矽烷基的聚矽氧樹脂(以下所示的A3-3、A3-4、A3-5)。
(合成例3)含有乙烯基的有機聚矽氧烷(A3-1)之合成
於燒瓶中加入二甲苯1000g、水5014g,滴下苯基三氯矽烷2285g(10.8mol)、乙烯基二甲基氯矽烷326g(2.70mol)、二甲苯1478g之混合者。於滴下結束後,攪拌3小時,進行廢酸分離,水洗。於共沸脫水後,添加KOH 0.6g(0.015mol),在150℃進行4小時加熱回流。然後,用三甲基氯矽烷2.7g(0.025mol)、醋酸鉀2.5g(0.025mol)中和,於過濾後,減壓餾去溶劑,合成透明且在室溫為固體之矽氧烷樹脂(A3-1)。乙烯基當量為0.0013mol/g,羥基含量為0.01質量%。軟化點為65℃。
作為含有乙烯基的直鏈狀有機聚矽氧烷(A3-2),使用以下者。
CH2=CH-Si(CH3)2O-(-Si(CH3)2O-)35-(Si(CH3)(CH=CH2)O-)5-(Si(CH3)(C6H6)O-)10-Si(CH3)2-CH=CH2
乙烯基當量為0.0015mol/g
作為有機氫聚矽氧烷(A3-3),使用下述構造之
有機氫聚矽氧烷(0.00377mol/g)。
(n=2.0(平均值))X:氫原子SiH基當量0.403。Ph表示苯基)。
作為有機氫聚矽氧烷(A3-4),使用下述構造之有機氫聚矽氧烷(0.0069mol/g)。
作為有機氫聚矽氧烷(A3-5),使用下述構造之有機氫聚矽氧烷(0.0076mol/g)。
作為(B)成分之白色顏料,使用以下。
(1)氧化鈦(CR-95:石原產業(股)製):金紅石型 平均粒徑0.28μm)
(2)氧化鋅(三井金屬製)
(3)氧化鎂(和光化學製 平均粒徑10um)
(4)碳酸鋇(和光化學製 純度99%)
(5)硫酸鋇(和光化學製)
(6)矽酸鎂(KISHIDA化學製 純度90%)
作為(C)成分之無機質填充劑,使用以下。
(1)熔融球狀矽石(S-1):平均粒徑10μm,折射率1.43,比重2.2
(2)熔融球狀矽石(S-2):平均粒徑55μm,折射率1.43,比重2.2
(3)熔融球狀矽石(S-3):平均粒徑19μm,折射率1.43,比重2.2
(4)球狀方英石:平均粒徑48μm,折射率1.54,比重2.3
(5)球狀矽酸鋁:平均粒徑45μm,折射率1.65,比重2.5
(6)球狀氧化鋁:平均粒徑43μm,折射率1.76,比重3.9
(7)氧化鋯:平均粒徑38μm,折射率2.4,比重6.5
(8)球狀氧化釔Y2O3:平均粒徑41μm,折射率1.82,比重:8.6
(9)氧化鑭La2O3:平均粒徑40μm,折射率1.88,比重:6.5
其它,使用表1、2中所示之以下的成分。
(D)加成反應觸媒
氯鉑酸之辛醇改性溶液(鉑濃度2質量%)
(E)反應抑制劑
下述式所示之化合物(EMDC)
(F)脫模劑
Rikester EW 440A(理研VITAMIN股份有限公司製)
(G)增黏劑
下述式所示之增黏劑
H-1
(上述式中,j為2,h為1,s為3,t為6,u為9)。
(實施例1~12、比較例1~4)
以表1、2所示之配合(質量份),摻合熱硬化性樹
脂、白色顏料、無機質填充劑、以及加成反應觸媒、反應抑制材、脫模劑、增黏劑、偶合劑(KBM403E(信越化學工業公司製)、KBM803(信越化學工業公司製))等,藉由雙輥混煉而得到熱硬化性樹脂組成物。再者,實施例1~12係含有作為無機質填充材的(C-1)平均粒徑為30μm~100μm,且折射率與前述(A)成分的熱硬化性樹脂之硬化物的折射率之差為0.05以上的至少1種無機質填充材,及(C-2)平均粒徑未達30μm的至少1種無機質填充材。另一方面,比較例1~4係含有作為無機質填充材的前述(C-1)及(C-2)中之任一者或皆不含有。
使用實施例1~12、比較例1~4所得之熱硬化性樹脂組成物,測定以下的諸特性。表3中顯示結果。成型係皆藉由轉移成型機,於175℃的成型溫度、6.9N/mm2的成型壓力、180秒的成形時間之條件下進行。
螺旋流動值
使用依照EMMI規格之模型,於175℃的成型溫度、6.9N/mm2的成型壓力、120秒的成形時間之條件下進行。
室溫下的彎曲強度、彎曲彈性模數
使用依照JIS-K6911規格之模型,於175℃的成型溫度、6.9N/mm2的成型壓力、120秒的成形時間之條件下成形,然後將在150℃ 2小時後烘烤之試驗片,於室溫(25℃)下測定彎曲強度與彎曲彈性模數。
光反射率
於175℃的成型溫度、6.9N/mm2的成型壓力、120秒的成形時間之條件下,作成1邊50mm、厚度0.35mm之正方形的硬化物,使用SDG(股)製X-rite 8200來測定450nm之光反射率。
漏光試驗(透光率)
作為漏光試驗,對成形為300微米厚的實施例1~12、比較例1~4之熱硬化性樹脂組成物之試驗片,照射450nm之光,測定所穿透的光之量。表3中顯示比較例1之試驗片的透光率為1.0時之各試驗片的相對值。使用採用實施例1~12的熱硬化性樹脂組成物所成形之反光板者,與比較例1~4所製造者相比,確認光之洩漏係非常少。
(實施例13)反光板之成形與物性
如圖1(A)中所示,使用經全面鍍銀的銅引線框作為引線框5,於下述之成形條件下,用實施例1~12所製造之熱硬化性樹脂組成物來轉移成形矩陣型凹型反光板1,製作矩陣型凹型反光基板10(以縱50mm橫55mm之銅板狀,成型有開口部直徑3mm、高度0.3mm之凹部以全部計形成130個之縱40mm橫50mm的反光板1)。又,使用比較例1~4之熱硬化性聚矽氧樹脂組成物,進行同樣之步驟。
成形條件係如下述。
成形溫度:170℃,成形壓力:70Kg/cm2,成形時間:3分鐘
更於170進行後烘烤2小時。
使用本發明之熱硬化性樹脂組成物所得之反光基板,係引線框與樹脂組成物之密接性亦良好。又,測定各自的矩陣型反光基板之翹曲,上述表3中顯示結果。反光基板之翹曲係在樹脂側於對角線的二方向中測定經後烘烤的上述反光基板,以平均值表示。
可知使用本發明之熱硬化性樹脂組成物所得之反光基板係抑制翹曲。
其次,如圖1中所示,在使用實施例1~12之熱硬化性樹脂組成物所製造之矩陣型凹型反光基板10之各自的凹狀之在底邊所露出的引線框5上,用聚矽氧晶粒黏合劑(品名:LPS-8445S,信越化學(股)製)黏著固定藍
色LED元件3,以金線4來與另一方的引線框5電連接。然後,將聚矽氧密封劑6(LPS-5547:信越化學(股)製)分別注入配置有LED元件3之凹部,在120℃ 1小時,更且在150℃ 1小時硬化而密封。又,使用比較例1~4之熱硬化性聚矽氧樹脂組成物,進行同樣之步驟。
藉由將完成密封步驟的矩陣型凹型反光基板予以切割而單片化,得到LED裝置。
使用此等單片型之LED裝置,點亮LED,以肉眼確認反光板底面部之漏光。使用實施例1~12之組成物所製造的反光板者,與比較例1~4所製造者相比,確認光之洩漏係非常少。
又,將以實施例1~12之組成物所製造的LED裝置在25℃、濕度80%之環境中放置48小時後,通過260℃的迴焊爐3次。然後,調查封裝表面或元件表面與密封樹脂之黏著不良。使用以本發明的熱硬化性樹脂組成物(實施例1~12)所成形的反光板者,係完全沒有發生剝離不良。
再者,本發明係不受上述實施形態所限定。上述實施形態係例示,具有與本發明的申請專利範圍記載的技術思想實質相同之構成,達成同樣的作用效果者,係皆包含於本發明之技術範圍中。
1‧‧‧矩陣型凹型反光板
2‧‧‧晶粒墊
3‧‧‧發光元件(LED元件)
4‧‧‧金線
5‧‧‧引線框
6‧‧‧透明聚矽氧樹脂
10‧‧‧矩陣型凹型反光基板
100‧‧‧光半導體裝置(LED裝置)
Claims (7)
- 一種LED之反光板用熱硬化性聚矽氧樹脂組成物,其特徵為含有:(A)聚矽氧樹脂及環氧.聚矽氧混合樹脂中的任一者 100質量份(B)由氧化鈦、氧化鋅、氧化鋯、氧化鎂、碳酸鋇、矽酸鎂、硫酸鋅、硫酸鋇中選出的至少1種白色顏料 3~200質量份(C)至少含有下述(C-1)成分及下述(C-2)成分之前述(B)成分以外的無機質填充材 200~1300質量份(C-1)平均粒徑為30~100μm之由方英石、矽酸鋁、鋯石、氧化釔、氧化鑭中選出之至少1種無機質填充材100~1000質量份(C-2)平均粒徑未達30μm的至少1種無機質填充材100~800質量份。
- 如請求項1之LED之反光板用熱硬化性聚矽氧樹脂組成物,其中前述(C)成分之(C-1)成分及(C-2)成分中的至少一者為球狀。
- 如請求項1或2之LED之反光板用熱硬化性聚矽氧樹脂組成物,其中前述LED之反光板用熱硬化性聚矽氧樹脂組成物係藉由縮合反應或氫矽烷化反應進行硬化。
- 一種LED用反光板,其特徵為由如請求項1之LED之反光板用熱硬化性聚矽氧樹脂組成物所成形。
- 一種光半導體裝置,其特徵為使用如請求項4之 LED用反光板。
- 一種LED用反光板,其特徵為由如請求項2之LED之反光板用熱硬化性聚矽氧樹脂組成物所成形。
- 一種光半導體裝置,其特徵為使用如請求項6之LED用反光板。
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JP2014077080A (ja) * | 2012-10-11 | 2014-05-01 | Sekisui Chem Co Ltd | 光半導体装置用白色硬化性組成物、光半導体装置用成形体及び光半導体装置 |
KR20140094758A (ko) * | 2013-01-22 | 2014-07-31 | 삼성전자주식회사 | 발광 소자 패키지 스트립 |
JP5797717B2 (ja) * | 2013-10-16 | 2015-10-21 | 台湾太陽油▲墨▼股▲分▼有限公司 | 白色熱硬化性樹脂組成物、その硬化物、及びそれを用いたディスプレイ用部材 |
JP2015129257A (ja) * | 2013-12-04 | 2015-07-16 | 日東電工株式会社 | 光半導体装置用熱硬化性樹脂組成物およびそれを用いて得られる光半導体装置用リードフレーム、ならびに光半導体装置 |
WO2015104917A1 (ja) * | 2014-01-08 | 2015-07-16 | 信越化学工業株式会社 | 半導体封止用液状エポキシ樹脂組成物及び樹脂封止半導体装置 |
WO2016047539A1 (ja) * | 2014-09-24 | 2016-03-31 | 住友ベークライト株式会社 | 半導体封止用樹脂組成物、半導体装置および構造体 |
JP6311626B2 (ja) * | 2015-02-20 | 2018-04-18 | 信越化学工業株式会社 | Ledリフレクター用白色熱硬化性エポキシ樹脂組成物 |
WO2016145652A1 (en) * | 2015-03-19 | 2016-09-22 | Ablestik (Shanghai) Ltd. | A method for manufacturing an optical semiconductor device, a thermosetting resin composition therefor and an optical semiconductor obtained therefrom |
JP2017027019A (ja) * | 2015-07-22 | 2017-02-02 | パナソニックIpマネジメント株式会社 | 光源装置 |
JP6217711B2 (ja) | 2015-08-21 | 2017-10-25 | 日亜化学工業株式会社 | 発光装置の製造方法 |
JP6566121B2 (ja) * | 2016-03-30 | 2019-08-28 | 日立化成株式会社 | 熱硬化性樹脂組成物、光半導体素子搭載用基板及びその製造方法並びに光半導体装置 |
JP7065382B2 (ja) * | 2016-07-19 | 2022-05-12 | パナソニックIpマネジメント株式会社 | 光反射体用成形材料及びその製造方法、光反射体、ベース体及びその製造方法、並びに発光装置 |
CN110908180A (zh) * | 2018-09-17 | 2020-03-24 | 夏普株式会社 | 照明装置、显示装置及照明装置的制造方法 |
CN109206914A (zh) * | 2018-10-25 | 2019-01-15 | 浙江久运车辆部件有限公司 | 一种耐低温硅胶与氯化丁基胶共混材料及制备方法 |
JP2020164678A (ja) | 2019-03-29 | 2020-10-08 | 日亜化学工業株式会社 | シリコーン樹脂組成物及びその製造方法 |
JP7358875B2 (ja) * | 2019-09-20 | 2023-10-11 | 船井電機株式会社 | 照明装置および表示装置 |
Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201011068A (en) * | 2008-06-09 | 2010-03-16 | Shinetsu Chemical Co | White heat-curable silicone resin composition and optoelectronic part case |
Family Cites Families (21)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7994527B2 (en) * | 2005-11-04 | 2011-08-09 | The Regents Of The University Of California | High light extraction efficiency light emitting diode (LED) |
JP5060707B2 (ja) * | 2004-11-10 | 2012-10-31 | 日立化成工業株式会社 | 光反射用熱硬化性樹脂組成物 |
JP4608294B2 (ja) | 2004-11-30 | 2011-01-12 | 日亜化学工業株式会社 | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP4634891B2 (ja) | 2005-08-18 | 2011-02-16 | 信越化学工業株式会社 | 熱伝導性シリコーングリース組成物およびその硬化物 |
JP5232369B2 (ja) | 2006-02-03 | 2013-07-10 | 日立化成株式会社 | 光半導体素子搭載用パッケージ基板の製造方法およびこれを用いた光半導体装置の製造方法 |
JP2007297601A (ja) | 2006-04-06 | 2007-11-15 | Hitachi Chem Co Ltd | 光反射用熱硬化性樹脂組成物、これを用いた光半導体素子搭載用基板とその製造方法および光半導体装置 |
CN100509952C (zh) * | 2006-05-26 | 2009-07-08 | 中国科学院理化技术研究所 | 一种透明环氧纳米复合材料及其制备方法和用途 |
JP2007329219A (ja) | 2006-06-07 | 2007-12-20 | Nichia Chem Ind Ltd | 樹脂成形体及び表面実装型発光装置並びにそれらの製造方法 |
JP4611937B2 (ja) | 2006-06-07 | 2011-01-12 | 日亜化学工業株式会社 | 表面実装型発光装置及びその製造方法 |
JP2008189827A (ja) | 2007-02-06 | 2008-08-21 | Shin Etsu Chem Co Ltd | 熱硬化性エポキシ樹脂組成物及び半導体装置 |
CN101338066B (zh) * | 2007-07-05 | 2010-09-08 | 中国科学院理化技术研究所 | 一种透明环氧纳米复合材料及其制备方法和用途 |
JP2009021394A (ja) | 2007-07-12 | 2009-01-29 | Nitto Denko Corp | 光半導体素子収納用実装パッケージ用樹脂組成物およびそれを用いて得られる光半導体発光装置 |
JP4623322B2 (ja) | 2007-12-26 | 2011-02-02 | 信越化学工業株式会社 | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース及びその成形方法 |
JP4678415B2 (ja) | 2008-03-18 | 2011-04-27 | 信越化学工業株式会社 | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物並びに光半導体ケース |
JP2009256400A (ja) | 2008-04-11 | 2009-11-05 | Shin Etsu Chem Co Ltd | 半導体素子用シリコーン接着剤 |
JP2010021533A (ja) * | 2008-06-09 | 2010-01-28 | Shin-Etsu Chemical Co Ltd | 光半導体ケース形成用白色熱硬化性シリコーン樹脂組成物及び光半導体ケース |
JP5294414B2 (ja) | 2009-08-21 | 2013-09-18 | 信越化学工業株式会社 | オルガノポリシルメチレン組成物及びその硬化物 |
JP5488326B2 (ja) * | 2009-09-01 | 2014-05-14 | 信越化学工業株式会社 | 光半導体装置用白色熱硬化性シリコーンエポキシ混成樹脂組成物及びその製造方法並びにプレモールドパッケージ及びled装置 |
TW201139532A (en) * | 2010-04-30 | 2011-11-16 | Styron Europe Gmbh | Improved light diffusing composition |
JP2013209479A (ja) * | 2012-03-30 | 2013-10-10 | Sekisui Chem Co Ltd | 光半導体装置 |
JP5143964B1 (ja) * | 2012-03-30 | 2013-02-13 | 積水化学工業株式会社 | 光半導体装置用白色硬化性組成物、並びに光半導体装置用成形体 |
-
2012
- 2012-04-16 JP JP2012093255A patent/JP5756054B2/ja active Active
-
2013
- 2013-03-29 US US13/853,368 patent/US8877849B2/en active Active
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Patent Citations (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
TW201011068A (en) * | 2008-06-09 | 2010-03-16 | Shinetsu Chemical Co | White heat-curable silicone resin composition and optoelectronic part case |
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KR20130116814A (ko) | 2013-10-24 |
KR101948327B1 (ko) | 2019-02-14 |
US20130271999A1 (en) | 2013-10-17 |
TW201402675A (zh) | 2014-01-16 |
JP5756054B2 (ja) | 2015-07-29 |
CN103374206B (zh) | 2017-04-26 |
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