TWI611268B - 負型感光性矽氧烷組成物、硬化膜之製造方法及硬化膜 - Google Patents

負型感光性矽氧烷組成物、硬化膜之製造方法及硬化膜 Download PDF

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Publication number
TWI611268B
TWI611268B TW103105399A TW103105399A TWI611268B TW I611268 B TWI611268 B TW I611268B TW 103105399 A TW103105399 A TW 103105399A TW 103105399 A TW103105399 A TW 103105399A TW I611268 B TWI611268 B TW I611268B
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TW
Taiwan
Prior art keywords
polysiloxane
group
film
negative
composition
Prior art date
Application number
TW103105399A
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English (en)
Chinese (zh)
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TW201437765A (zh
Inventor
Daishi Yokoyama
橫山大志
Yuji Tashiro
田代裕治
Toshiaki Nonaka
野中敏章
Eri HIRAHARA
平原衣梨
George Pawlowski
喬治 帕洛斯基
Original Assignee
AZ ELECTRONIC MATERIALS (LUXEMBOURG) S. a. r. l.
Ａｚ電子材料盧森堡有限公司
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Publication of TW201437765A publication Critical patent/TW201437765A/zh
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Publication of TWI611268B publication Critical patent/TWI611268B/zh

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    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G03F7/0757—Macromolecular compounds containing Si-O, Si-C or Si-N bonds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/022—Quinonediazides
    • G03F7/023—Macromolecular quinonediazides; Macromolecular additives, e.g. binders
    • G03F7/0233—Macromolecular quinonediazides; Macromolecular additives, e.g. binders characterised by the polymeric binders or the macromolecular additives other than the macromolecular quinonediazides
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/027—Non-macromolecular photopolymerisable compounds having carbon-to-carbon double bonds, e.g. ethylenic compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/038—Macromolecular compounds which are rendered insoluble or differentially wettable
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/075—Silicon-containing compounds
    • G—PHYSICS
    • G03—PHOTOGRAPHY; CINEMATOGRAPHY; ANALOGOUS TECHNIQUES USING WAVES OTHER THAN OPTICAL WAVES; ELECTROGRAPHY; HOLOGRAPHY
    • G03F—PHOTOMECHANICAL PRODUCTION OF TEXTURED OR PATTERNED SURFACES, e.g. FOR PRINTING, FOR PROCESSING OF SEMICONDUCTOR DEVICES; MATERIALS THEREFOR; ORIGINALS THEREFOR; APPARATUS SPECIALLY ADAPTED THEREFOR
    • G03F7/00—Photomechanical, e.g. photolithographic, production of textured or patterned surfaces, e.g. printing surfaces; Materials therefor, e.g. comprising photoresists; Apparatus specially adapted therefor
    • G03F7/004—Photosensitive materials
    • G03F7/085—Photosensitive compositions characterised by adhesion-promoting non-macromolecular additives

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  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • Spectroscopy & Molecular Physics (AREA)
  • Materials For Photolithography (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
TW103105399A 2013-02-20 2014-02-19 負型感光性矽氧烷組成物、硬化膜之製造方法及硬化膜 TWI611268B (zh)

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
JP2013031345A JP6137862B2 (ja) 2013-02-20 2013-02-20 ネガ型感光性シロキサン組成物

Publications (2)

Publication Number Publication Date
TW201437765A TW201437765A (zh) 2014-10-01
TWI611268B true TWI611268B (zh) 2018-01-11

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TW103105399A TWI611268B (zh) 2013-02-20 2014-02-19 負型感光性矽氧烷組成物、硬化膜之製造方法及硬化膜

Country Status (4)

Country Link
JP (1) JP6137862B2 (ja)
KR (1) KR102157030B1 (ja)
CN (1) CN103995437B (ja)
TW (1) TWI611268B (ja)

Families Citing this family (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
EP2998297A1 (en) * 2014-09-18 2016-03-23 Heraeus Materials Korea Corporation Photo-acid generating compounds, compositions comprising said compounds, composite and process for making said composite as well as uses of said compounds
US9477150B2 (en) * 2015-03-13 2016-10-25 Heraeus Precious Metals North America Daychem LLC Sulfonic acid derivative compounds as photoacid generators in resist applications
JP2018189738A (ja) * 2017-04-28 2018-11-29 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポジ型感光性シロキサン組成物、およびそれを用いて形成した硬化膜
WO2019023837A1 (en) * 2017-07-31 2019-02-07 Dow Silicones Corporation HANDLING ADDITIVE FOR SILICONE ELASTOMERS
JP2019099673A (ja) 2017-12-01 2019-06-24 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ ポリシロキサン、これを含んでなる組成物、およびこれを用いた硬化膜
JP2019120750A (ja) * 2017-12-28 2019-07-22 メルク、パテント、ゲゼルシャフト、ミット、ベシュレンクテル、ハフツングＭｅｒｃｋ Ｐａｔｅｎｔ ＧｍｂＨ 感光性シロキサン組成物およびこれを用いたパターン形成方法
TWI701511B (zh) * 2019-01-16 2020-08-11 臺灣永光化學工業股份有限公司 負型感光性樹脂組成物及其用途
CN112552280A (zh) * 2019-09-25 2021-03-26 常州强力先端电子材料有限公司 一种高产酸的磺酰亚胺类光产酸剂
WO2021057813A1 (zh) * 2019-09-25 2021-04-01 常州强力先端电子材料有限公司 磺酰亚胺类光产酸剂、感光性树脂组合物、图形化方法及感光性树脂组合物的应用
CN112558409B (zh) * 2019-09-25 2022-05-20 常州强力先端电子材料有限公司 能够在i线高产酸的磺酰亚胺类光产酸剂
CN114516863B (zh) * 2020-11-19 2024-06-21 常州强力电子新材料股份有限公司 一种高产酸的酰亚胺磺酸酯类光产酸剂、组合物及应用
CN115894438A (zh) * 2021-09-30 2023-04-04 华为技术有限公司 感光分子及其应用

Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007193318A (ja) * 2005-12-21 2007-08-02 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子
TW201139380A (en) * 2010-01-13 2011-11-16 Adeka Corp Novel sulfonic acid derivative compound and novel naphthalic acid derivative compound
JP2012155200A (ja) * 2011-01-27 2012-08-16 Jsr Corp 感放射線性組成物、硬化膜及びその形成方法
TW201239531A (en) * 2011-03-22 2012-10-01 Jsr Corp Radiation-sensitive composition, cured film and forming method thereof
TW201300957A (zh) * 2011-05-20 2013-01-01 Az Electronic Mat Ip Japan Kk 正型感光性矽氧烷組成物

Family Cites Families (12)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2933879B2 (ja) 1995-08-11 1999-08-16 シャープ株式会社 透過型液晶表示装置およびその製造方法
EP1672426A4 (en) 2003-10-07 2010-02-24 Hitachi Chemical Co Ltd RADIATION-CURABLE COMPOSITION, METHOD OF STORING THE SAME, METHOD OF FORMING HARDENED FILM, PATTERN FORMING METHOD, PATTERN USING METHOD, ELECTRONIC COMPONENT, AND OPTICAL WAVEGUIDE
JP4687250B2 (ja) * 2004-06-02 2011-05-25 東レ株式会社 感光性樹脂組成物
KR101203632B1 (ko) 2004-12-24 2012-11-23 재단법인 포항산업과학연구원 투윈롤 스트립 캐스터의 롤갭 측정방법
JP2006236839A (ja) 2005-02-25 2006-09-07 Mitsubishi Electric Corp 有機電界発光型表示装置
JP2007316314A (ja) * 2006-05-25 2007-12-06 Sekisui Chem Co Ltd 感光性樹脂組成物、これを用いた薄膜パターンの製造方法、電子機器用保護膜、トランジスタ、カラーフィルタ、有機ｅｌ素子、ゲート絶縁膜及び薄膜トランジスタ
JP2010039053A (ja) * 2008-08-01 2010-02-18 Sekisui Chem Co Ltd 感光性組成物及びパターン膜の製造方法
FR2935977B1 (fr) * 2008-09-15 2010-12-17 Centre Nat Rech Scient Procede d'hydrolyse-polycondensation photochimique de chromophores reticulables a encombrement sterique, catalyse par un acide photogenere et ses applications.
JP4918578B2 (ja) 2009-08-17 2012-04-18 ダウ・コーニング・コーポレイション ネガ型パターン形成用硬化性シリコーン組成物、及びこれを用いたパターン形成方法
JP5516869B2 (ja) 2010-03-13 2014-06-11 川崎化成工業株式会社 光カチオン重合増感剤組成物、光感応性酸発生剤組成物、光カチオン重合性組成物及び該光カチオン重合組成物を重合してなる重合物
US8883397B2 (en) * 2010-08-24 2014-11-11 Az Electronic Materials Usa Corp. Positive photosensitive siloxane composition
JP5990447B2 (ja) * 2012-11-12 2016-09-14 メルクパフォーマンスマテリアルズマニュファクチャリング合同会社 芳香族イミド化合物及びその製造方法

Patent Citations (5)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP2007193318A (ja) * 2005-12-21 2007-08-02 Toray Ind Inc 感光性シロキサン組成物、それから形成された硬化膜および硬化膜を有する素子
TW201139380A (en) * 2010-01-13 2011-11-16 Adeka Corp Novel sulfonic acid derivative compound and novel naphthalic acid derivative compound
JP2012155200A (ja) * 2011-01-27 2012-08-16 Jsr Corp 感放射線性組成物、硬化膜及びその形成方法
TW201239531A (en) * 2011-03-22 2012-10-01 Jsr Corp Radiation-sensitive composition, cured film and forming method thereof
TW201300957A (zh) * 2011-05-20 2013-01-01 Az Electronic Mat Ip Japan Kk 正型感光性矽氧烷組成物

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Publication number Publication date
CN103995437A (zh) 2014-08-20
JP2014160199A (ja) 2014-09-04
JP6137862B2 (ja) 2017-05-31
KR102157030B1 (ko) 2020-09-21
KR20140104355A (ko) 2014-08-28
CN103995437B (zh) 2019-11-29
TW201437765A (zh) 2014-10-01

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