TWI609169B - 量測系統及方法 - Google Patents

量測系統及方法 Download PDF

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Publication number
TWI609169B
TWI609169B TW102122771A TW102122771A TWI609169B TW I609169 B TWI609169 B TW I609169B TW 102122771 A TW102122771 A TW 102122771A TW 102122771 A TW102122771 A TW 102122771A TW I609169 B TWI609169 B TW I609169B
Authority
TW
Taiwan
Prior art keywords
radiation
stack
dielectric
mode
measurement
Prior art date
Application number
TW102122771A
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English (en)
Chinese (zh)
Other versions
TW201408988A (zh
Inventor
娜安 薩賓恩斯
喬爾 色林格森
維拉得摩 朗維司基
丹尼爾 堪德爾
亞爾 飛勒
巴瑞克 布蘭歐里茲
阿農 馬那森
伊利維 班尼斯堤
Original Assignee
克萊譚克公司
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Priority claimed from PCT/US2013/047682 external-priority patent/WO2014004555A1/en
Application filed by 克萊譚克公司 filed Critical 克萊譚克公司
Publication of TW201408988A publication Critical patent/TW201408988A/zh
Application granted granted Critical
Publication of TWI609169B publication Critical patent/TWI609169B/zh

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Classifications

    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/17—Systems in which incident light is modified in accordance with the properties of the material investigated
    • G01N21/55—Specular reflectivity
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B11/00—Measuring arrangements characterised by the use of optical techniques
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01B—MEASURING LENGTH, THICKNESS OR SIMILAR LINEAR DIMENSIONS; MEASURING ANGLES; MEASURING AREAS; MEASURING IRREGULARITIES OF SURFACES OR CONTOURS
    • G01B9/00—Measuring instruments characterised by the use of optical techniques
    • G01B9/02—Interferometers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/9501—Semiconductor wafers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N21/00—Investigating or analysing materials by the use of optical means, i.e. using sub-millimetre waves, infrared, visible or ultraviolet light
    • G01N21/84—Systems specially adapted for particular applications
    • G01N21/88—Investigating the presence of flaws or contamination
    • G01N21/95—Investigating the presence of flaws or contamination characterised by the material or shape of the object to be examined
    • G01N21/956—Inspecting patterns on the surface of objects
    • H—ELECTRICITY
    • H10—SEMICONDUCTOR DEVICES; ELECTRIC SOLID-STATE DEVICES NOT OTHERWISE PROVIDED FOR
    • H10P—GENERIC PROCESSES OR APPARATUS FOR THE MANUFACTURE OR TREATMENT OF DEVICES COVERED BY CLASS H10
    • H10P74/00—Testing or measuring during manufacture or treatment of wafers, substrates or devices
    • H10P74/20—Testing or measuring during manufacture or treatment of wafers, substrates or devices characterised by the properties tested or measured, e.g. structural or electrical properties
    • H10P74/203—Structural properties, e.g. testing or measuring thicknesses, line widths, warpage, bond strengths or physical defects
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/06—Illumination; Optics
    • G01N2201/061—Sources
    • G01N2201/06113—Coherent sources; lasers
    • G—PHYSICS
    • G01—MEASURING; TESTING
    • G01N—INVESTIGATING OR ANALYSING MATERIALS BY DETERMINING THEIR CHEMICAL OR PHYSICAL PROPERTIES
    • G01N2201/00—Features of devices classified in G01N21/00
    • G01N2201/10—Scanning
    • G01N2201/104—Mechano-optical scan, i.e. object and beam moving

Landscapes

  • Physics & Mathematics (AREA)
  • General Physics & Mathematics (AREA)
  • General Health & Medical Sciences (AREA)
  • Chemical & Material Sciences (AREA)
  • Analytical Chemistry (AREA)
  • Biochemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
  • Health & Medical Sciences (AREA)
  • Immunology (AREA)
  • Pathology (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)
  • Length Measuring Devices By Optical Means (AREA)
  • Investigating Or Analysing Materials By Optical Means (AREA)
  • Exposure And Positioning Against Photoresist Photosensitive Materials (AREA)
  • Investigating Materials By The Use Of Optical Means Adapted For Particular Applications (AREA)
TW102122771A 2012-06-26 2013-06-26 量測系統及方法 TWI609169B (zh)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
US201261664477P 2012-06-26 2012-06-26
US201361764435P 2013-02-13 2013-02-13
PCT/US2013/047682 WO2014004555A1 (en) 2012-06-26 2013-06-25 Near field metrology

Publications (2)

Publication Number Publication Date
TW201408988A TW201408988A (zh) 2014-03-01
TWI609169B true TWI609169B (zh) 2017-12-21

Family

ID=49783807

Family Applications (2)

Application Number Title Priority Date Filing Date
TW102122771A TWI609169B (zh) 2012-06-26 2013-06-26 量測系統及方法
TW102122770A TWI629448B (zh) 2012-06-26 2013-06-26 角度解析反射計及用於量測之方法、系統及電腦程式產品

Family Applications After (1)

Application Number Title Priority Date Filing Date
TW102122770A TWI629448B (zh) 2012-06-26 2013-06-26 角度解析反射計及用於量測之方法、系統及電腦程式產品

Country Status (6)

Country Link
US (3) US9958385B2 (https=)
EP (1) EP2865003A1 (https=)
JP (3) JP6353831B2 (https=)
KR (3) KR102231730B1 (https=)
TW (2) TWI609169B (https=)
WO (1) WO2014004564A1 (https=)

Families Citing this family (34)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2007041797A1 (en) 2005-10-14 2007-04-19 Resmed Ltd Flow generator message system
DK3521210T3 (da) 2010-07-22 2020-04-14 K Fee System Gmbh Portionskapsel med stregkode
WO2012114333A1 (en) 2011-02-24 2012-08-30 Ilan Ben Oren Hybrid catheter for vascular intervention
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US12514456B2 (en) 2013-01-31 2026-01-06 Eximo Medical Ltd. System and methods for lesion characterization in blood vessels
US9851300B1 (en) 2014-04-04 2017-12-26 Kla-Tencor Corporation Decreasing inaccuracy due to non-periodic effects on scatterometric signals
EP3145430B1 (en) 2014-05-18 2019-07-03 Eximo Medical Ltd. System for tissue ablation using pulsed laser
WO2015191543A1 (en) * 2014-06-10 2015-12-17 Applied Materials Israel, Ltd. Scanning an object using multiple mechanical stages
CN112859540B (zh) * 2015-05-19 2024-10-18 科磊股份有限公司 成像计量目标及方法
CN108292106B (zh) * 2015-10-09 2021-05-25 Asml荷兰有限公司 用于检查及量测的方法和设备
CN116936393B (zh) * 2016-02-24 2024-12-20 科磊股份有限公司 光学计量的准确度提升
US11684420B2 (en) 2016-05-05 2023-06-27 Eximo Medical Ltd. Apparatus and methods for resecting and/or ablating an undesired tissue
KR101971272B1 (ko) 2016-06-02 2019-08-27 주식회사 더웨이브톡 패턴 구조물 검사 장치 및 검사 방법
WO2017209544A1 (ko) * 2016-06-02 2017-12-07 주식회사 더웨이브톡 패턴 구조물 검사 장치 및 검사 방법
EP3318927A1 (en) * 2016-11-04 2018-05-09 ASML Netherlands B.V. Method and apparatus for measuring a parameter of a lithographic process, computer program products for implementing such methods & apparatus
KR102650388B1 (ko) * 2016-11-23 2024-03-25 삼성전자주식회사 검사 장치 및 그를 이용한 반도체 소자의 제조 방법
TWI649635B (zh) * 2017-01-24 2019-02-01 台灣積體電路製造股份有限公司 層疊誤差測量裝置及方法
US10732516B2 (en) * 2017-03-01 2020-08-04 Kla Tencor Corporation Process robust overlay metrology based on optical scatterometry
JP6942555B2 (ja) * 2017-08-03 2021-09-29 東京エレクトロン株式会社 基板処理方法、コンピュータ記憶媒体及び基板処理システム
US11378451B2 (en) 2017-08-07 2022-07-05 Kla Corporation Bandgap measurements of patterned film stacks using spectroscopic metrology
US11156846B2 (en) 2019-04-19 2021-10-26 Kla Corporation High-brightness illumination source for optical metrology
DE102019215972A1 (de) 2019-10-17 2021-04-22 Carl Zeiss Smt Gmbh Verfahren zur Messung einer Reflektivität eines Objekts für Messlicht sowie Metrologiesystem zur Durchführung des Verfahrens
US11762305B2 (en) 2019-12-05 2023-09-19 Asml Netherlands B.V. Alignment method
US11624607B2 (en) * 2020-01-06 2023-04-11 Tokyo Electron Limited Hardware improvements and methods for the analysis of a spinning reflective substrates
TW202221314A (zh) * 2020-09-02 2022-06-01 以色列商應用材料以色列公司 多視角晶圓分析
US12376904B1 (en) 2020-09-08 2025-08-05 Angiodynamics, Inc. Dynamic laser stabilization and calibration system
CN119198636A (zh) * 2020-11-18 2024-12-27 鲁姆斯有限公司 基于光学的方法和系统
US20240027913A1 (en) * 2020-12-08 2024-01-25 Asml Netherlands B.V. Metrology system and coherence adjusters
US12085385B2 (en) * 2021-10-06 2024-09-10 Kla Corporation Design-assisted large field of view metrology
KR20230170217A (ko) 2022-06-10 2023-12-19 삼성전자주식회사 반도체 계측 장치
US12038322B2 (en) 2022-06-21 2024-07-16 Eximo Medical Ltd. Devices and methods for testing ablation systems
KR20240108945A (ko) * 2023-01-03 2024-07-10 삼성전자주식회사 기판 검사 장치 및 기판 검사 방법
KR20250151074A (ko) 2024-04-13 2025-10-21 이수연 지퍼가 달린 고무장갑
TWI902575B (zh) * 2024-12-19 2025-10-21 國立臺灣科技大學 同心圓陰影莫爾測量系統

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010050896A1 (en) * 1998-05-29 2001-12-13 Terastor Corporation, A Delaware Corporation Beam focusing in near-field optical recording and reading
TW200612212A (en) * 2004-08-19 2006-04-16 Zetetic Inst Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers

Family Cites Families (83)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US6288780B1 (en) * 1995-06-06 2001-09-11 Kla-Tencor Technologies Corp. High throughput brightfield/darkfield wafer inspection system using advanced optical techniques
US6023338A (en) * 1996-07-12 2000-02-08 Bareket; Noah Overlay alignment measurement of wafers
JPH10253889A (ja) * 1997-03-13 1998-09-25 Olympus Optical Co Ltd 走査型顕微鏡装置
WO1999047041A1 (en) * 1998-03-19 1999-09-23 Board Of Regents, The University Of Texas System Fiber-optic confocal imaging apparatus and methods of use
US6151127A (en) * 1998-05-28 2000-11-21 The General Hospital Corporation Confocal microscopy
US6800859B1 (en) * 1998-12-28 2004-10-05 Hitachi, Ltd. Method and equipment for detecting pattern defect
US6512385B1 (en) * 1999-07-26 2003-01-28 Paul Pfaff Method for testing a device under test including the interference of two beams
JP4009409B2 (ja) * 1999-10-29 2007-11-14 株式会社日立製作所 パターン欠陥検査方法及びその装置
US7049633B2 (en) * 1999-12-10 2006-05-23 Tokyo Electron Limited Method of measuring meso-scale structures on wafers
US7317531B2 (en) 2002-12-05 2008-01-08 Kla-Tencor Technologies Corporation Apparatus and methods for detecting overlay errors using scatterometry
US7541201B2 (en) * 2000-08-30 2009-06-02 Kla-Tencor Technologies Corporation Apparatus and methods for determining overlay of structures having rotational or mirror symmetry
US6633831B2 (en) 2000-09-20 2003-10-14 Kla Tencor Technologies Methods and systems for determining a critical dimension and a thin film characteristic of a specimen
US7115858B1 (en) * 2000-09-25 2006-10-03 Nanometrics Incorporated Apparatus and method for the measurement of diffracting structures
US20030002043A1 (en) * 2001-04-10 2003-01-02 Kla-Tencor Corporation Periodic patterns and technique to control misalignment
DE10146944A1 (de) * 2001-09-24 2003-04-10 Zeiss Carl Jena Gmbh Meßanordnung
US6958814B2 (en) * 2002-03-01 2005-10-25 Applied Materials, Inc. Apparatus and method for measuring a property of a layer in a multilayered structure
US6792328B2 (en) 2002-03-29 2004-09-14 Timbre Technologies, Inc. Metrology diffraction signal adaptation for tool-to-tool matching
US7170604B2 (en) 2002-07-03 2007-01-30 Tokyo Electron Limited Overlay metrology method and apparatus using more than one grating per measurement direction
US7046376B2 (en) 2002-07-05 2006-05-16 Therma-Wave, Inc. Overlay targets with isolated, critical-dimension features and apparatus to measure overlay
KR101223195B1 (ko) * 2002-09-09 2013-01-21 지고 코포레이션 박막 구조의 특징화를 포함하여, 타원편광 측정, 반사 측정 및 산란 측정을 위한 간섭측정 방법 및 장치
JP4222927B2 (ja) 2002-09-20 2009-02-12 エーエスエムエル ネザーランズ ビー．ブイ． 少なくとも２波長を使用するリソグラフィ装置用アライメント・システム
JP2004166151A (ja) * 2002-11-15 2004-06-10 Fuji Photo Film Co Ltd 画像データ作成方法および装置
US7525659B2 (en) * 2003-01-15 2009-04-28 Negevtech Ltd. System for detection of water defects
US20040227944A1 (en) * 2003-02-28 2004-11-18 Nikon Corporation Mark position detection apparatus
US7324214B2 (en) * 2003-03-06 2008-01-29 Zygo Corporation Interferometer and method for measuring characteristics of optically unresolved surface features
JP4209709B2 (ja) * 2003-03-20 2009-01-14 株式会社キーエンス 変位計
US7420675B2 (en) 2003-06-25 2008-09-02 The University Of Akron Multi-wavelength imaging system
ATE396428T1 (de) * 2003-09-26 2008-06-15 Zeiss Carl Smt Ag Belichtungsverfahren sowie projektions- belichtungssystem zur ausführung des verfahrens
JP4074867B2 (ja) 2003-11-04 2008-04-16 エーエスエムエル ネザーランズ ビー．ブイ． 第１及び第２位置合せマークの相対位置を計測する方法及び装置
US7417743B2 (en) * 2004-03-15 2008-08-26 Zygo Corporation Interferometry systems and methods
US7081957B2 (en) 2004-04-08 2006-07-25 Therma-Wave, Inc. Aperture to reduce sensitivity to sample tilt in small spotsize reflectometers
DE102004034960A1 (de) * 2004-07-16 2006-02-02 Carl Zeiss Jena Gmbh Korrektur-Vorrichtung für eine optische Anordnung und konfokales Mikroskop mit einer solchen Vorrichtung
US7791727B2 (en) * 2004-08-16 2010-09-07 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
EP1640706A1 (en) 2004-09-22 2006-03-29 Eldim Sa Wavelength and incidence angle resolved ellipsometer or reflectometer
US7884947B2 (en) 2005-01-20 2011-02-08 Zygo Corporation Interferometry for determining characteristics of an object surface, with spatially coherent illumination
US20060164649A1 (en) 2005-01-24 2006-07-27 Eliezer Rosengaus Multi-spectral techniques for defocus detection
US7528953B2 (en) 2005-03-01 2009-05-05 Kla-Tencor Technologies Corp. Target acquisition and overlay metrology based on two diffracted orders imaging
US7161667B2 (en) * 2005-05-06 2007-01-09 Kla-Tencor Technologies Corporation Wafer edge inspection
US7433034B1 (en) * 2005-06-17 2008-10-07 Nanometrics Incorporated Darkfield defect inspection with spectral contents
US8026495B2 (en) * 2005-10-28 2011-09-27 Carl Zeiss Sms Gmbh Charged particle beam exposure system
US20070121090A1 (en) 2005-11-30 2007-05-31 Asml Netherlands B.V. Lithographic apparatus and device manufacturing method
JP2009527770A (ja) * 2006-02-24 2009-07-30 ザ ジェネラル ホスピタル コーポレイション 角度分解型のフーリエドメイン光干渉断層撮影法を遂行する方法及びシステム
US7523021B2 (en) 2006-03-08 2009-04-21 Tokyo Electron Limited Weighting function to enhance measured diffraction signals in optical metrology
US7528941B2 (en) 2006-06-01 2009-05-05 Kla-Tencor Technolgies Corporation Order selected overlay metrology
US7664608B2 (en) * 2006-07-14 2010-02-16 Hitachi High-Technologies Corporation Defect inspection method and apparatus
US7643666B2 (en) 2006-08-08 2010-01-05 Asml Netherlands B.V. Method and apparatus for angular-resolved spectroscopic lithography characterization
US7428044B2 (en) 2006-11-16 2008-09-23 Tokyo Electron Limited Drift compensation for an optical metrology tool
US20080135774A1 (en) * 2006-12-08 2008-06-12 Asml Netherlands B.V. Scatterometer, a lithographic apparatus and a focus analysis method
WO2008080127A2 (en) * 2006-12-22 2008-07-03 Zygo Corporation Apparatus and method for measuring characteristics of surface features
US7741131B2 (en) * 2007-05-25 2010-06-22 Electro Scientific Industries, Inc. Laser processing of light reflective multilayer target structure
WO2008152802A1 (ja) * 2007-06-13 2008-12-18 Nikon Corporation 共焦点顕微鏡装置
NL1035986A1 (nl) * 2007-09-28 2009-03-31 Asml Holding Nv Controlling fluctuations in pointing, positioning, size or divergence errors of a beam of light for an optical apparatus.
WO2009046137A1 (en) * 2007-10-02 2009-04-09 Kla-Tencor Corporation Optical imaging system with catoptric objective; broadband objective with mirror; and refractive lenses and broadband optical imaging system having two or more imaging paths
JP2009122660A (ja) 2007-10-25 2009-06-04 Panasonic Corp 画像表示装置
KR20100092014A (ko) * 2007-11-12 2010-08-19 마이크로닉 레이저 시스템즈 에이비 패턴 에러들을 검출하기 위한 방법들 및 장치들
NL1036245A1 (nl) 2007-12-17 2009-06-18 Asml Netherlands Bv Diffraction based overlay metrology tool and method of diffraction based overlay metrology.
US8115992B2 (en) * 2007-12-31 2012-02-14 Stc.Unm Structural illumination and evanescent coupling for the extension of imaging interferometric microscopy
NL1036468A1 (nl) * 2008-02-27 2009-08-31 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US8194301B2 (en) * 2008-03-04 2012-06-05 Kla-Tencor Corporation Multi-spot scanning system and method
JP2009253209A (ja) * 2008-04-10 2009-10-29 Canon Inc 露光装置及びデバイス製造方法
NL1036702A1 (nl) 2008-04-15 2009-10-19 Asml Holding Nv Diffraction elements for alignment targets.
NL1036856A1 (nl) * 2008-04-24 2009-10-27 Asml Netherlands Bv Inspection method and apparatus, lithographic apparatus, lithographic processing cell and device manufacturing method.
US7986412B2 (en) * 2008-06-03 2011-07-26 Jzw Llc Interferometric defect detection and classification
US7990534B2 (en) 2008-07-08 2011-08-02 Tokyo Electron Limited System and method for azimuth angle calibration
US8930156B2 (en) * 2008-07-21 2015-01-06 Kla-Tencor Corporation Metrology through use of feed forward feed sideways and measurement cell re-use
US9080991B2 (en) * 2008-09-29 2015-07-14 Kla-Tencor Corp. Illuminating a specimen for metrology or inspection
KR101331107B1 (ko) * 2008-11-07 2013-11-19 에이에스엠엘 네델란즈 비.브이. 스캐터로미터 및 리소그래피 장치
US8120781B2 (en) * 2008-11-26 2012-02-21 Zygo Corporation Interferometric systems and methods featuring spectral analysis of unevenly sampled data
JP5214538B2 (ja) * 2009-05-25 2013-06-19 オリンパス株式会社 画像取得装置、画像合成方法、及び顕微鏡システム
US8441639B2 (en) * 2009-09-03 2013-05-14 Kla-Tencor Corp. Metrology systems and methods
US9164397B2 (en) * 2010-08-03 2015-10-20 Kla-Tencor Corporation Optics symmetrization for metrology
JP2012037310A (ja) * 2010-08-05 2012-02-23 Renesas Electronics Corp 半導体集積回路の故障解析装置及び故障解析方法
JP5718012B2 (ja) * 2010-10-13 2015-05-13 オリンパス株式会社 走査型レーザ顕微鏡
NL2008414A (en) * 2011-03-21 2012-09-24 Asml Netherlands Bv Method and apparatus for determining structure parameters of microstructures.
US8681413B2 (en) * 2011-06-27 2014-03-25 Kla-Tencor Corporation Illumination control
CN103748515A (zh) 2011-08-23 2014-04-23 Asml荷兰有限公司 量测方法和设备以及器件制造方法
US9228943B2 (en) 2011-10-27 2016-01-05 Kla-Tencor Corporation Dynamically adjustable semiconductor metrology system
US8982358B2 (en) * 2012-01-17 2015-03-17 Kla-Tencor Corporation Apparatus and method of measuring roughness and other parameters of a structure
KR101704591B1 (ko) 2012-02-21 2017-02-08 에이에스엠엘 네델란즈 비.브이. 검사 장치 및 방법
US8817273B2 (en) 2012-04-24 2014-08-26 Nanometrics Incorporated Dark field diffraction based overlay
KR102231730B1 (ko) 2012-06-26 2021-03-24 케이엘에이 코포레이션 각도 분해형 반사율 측정에서의 스캐닝 및 광학 계측으로부터 회절의 알고리즘적 제거
US9093458B2 (en) * 2012-09-06 2015-07-28 Kla-Tencor Corporation Device correlated metrology (DCM) for OVL with embedded SEM structure overlay targets
US9217717B2 (en) * 2012-12-17 2015-12-22 Kla-Tencor Corporation Two dimensional optical detector with multiple shift registers

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US20010050896A1 (en) * 1998-05-29 2001-12-13 Terastor Corporation, A Delaware Corporation Beam focusing in near-field optical recording and reading
TW200612212A (en) * 2004-08-19 2006-04-16 Zetetic Inst Sub-nanometer overlay, critical dimension, and lithography tool projection optic metrology systems based on measurement of exposure induced changes in photoresist on wafers

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