TWI602305B - 薄膜電晶體及其製造方法及包含其之顯示裝置 - Google Patents
薄膜電晶體及其製造方法及包含其之顯示裝置 Download PDFInfo
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- TWI602305B TWI602305B TW102100520A TW102100520A TWI602305B TW I602305 B TWI602305 B TW I602305B TW 102100520 A TW102100520 A TW 102100520A TW 102100520 A TW102100520 A TW 102100520A TW I602305 B TWI602305 B TW I602305B
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- Prior art keywords
- aluminum
- metal
- oxide layer
- semiconductor
- thin film
- Prior art date
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- 239000010409 thin film Substances 0.000 title claims description 56
- 238000004519 manufacturing process Methods 0.000 title claims description 11
- 239000004065 semiconductor Substances 0.000 claims description 66
- 229910044991 metal oxide Inorganic materials 0.000 claims description 50
- 150000004706 metal oxides Chemical class 0.000 claims description 50
- 239000002243 precursor Substances 0.000 claims description 45
- 229910052751 metal Inorganic materials 0.000 claims description 42
- 239000002184 metal Substances 0.000 claims description 42
- TWNQGVIAIRXVLR-UHFFFAOYSA-N oxo(oxoalumanyloxy)alumane Chemical compound O=[Al]O[Al]=O TWNQGVIAIRXVLR-UHFFFAOYSA-N 0.000 claims description 36
- 229910052782 aluminium Inorganic materials 0.000 claims description 24
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 claims description 18
- 238000000034 method Methods 0.000 claims description 17
- -1 Aluminum alkoxide Chemical class 0.000 claims description 16
- 239000011575 calcium Substances 0.000 claims description 16
- 239000011777 magnesium Substances 0.000 claims description 16
- 239000010936 titanium Substances 0.000 claims description 16
- 229910052738 indium Inorganic materials 0.000 claims description 13
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 claims description 11
- 238000000137 annealing Methods 0.000 claims description 11
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 11
- BDHFUVZGWQCTTF-UHFFFAOYSA-M sulfonate Chemical compound [O-]S(=O)=O BDHFUVZGWQCTTF-UHFFFAOYSA-M 0.000 claims description 11
- NIXOWILDQLNWCW-UHFFFAOYSA-M Acrylate Chemical compound [O-]C(=O)C=C NIXOWILDQLNWCW-UHFFFAOYSA-M 0.000 claims description 9
- 229910052791 calcium Inorganic materials 0.000 claims description 9
- 229910052735 hafnium Inorganic materials 0.000 claims description 9
- VBJZVLUMGGDVMO-UHFFFAOYSA-N hafnium atom Chemical compound [Hf] VBJZVLUMGGDVMO-UHFFFAOYSA-N 0.000 claims description 9
- OYPRJOBELJOOCE-UHFFFAOYSA-N Calcium Chemical compound [Ca] OYPRJOBELJOOCE-UHFFFAOYSA-N 0.000 claims description 8
- FYYHWMGAXLPEAU-UHFFFAOYSA-N Magnesium Chemical compound [Mg] FYYHWMGAXLPEAU-UHFFFAOYSA-N 0.000 claims description 8
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052788 barium Inorganic materials 0.000 claims description 8
- DSAJWYNOEDNPEQ-UHFFFAOYSA-N barium atom Chemical compound [Ba] DSAJWYNOEDNPEQ-UHFFFAOYSA-N 0.000 claims description 8
- 230000015572 biosynthetic process Effects 0.000 claims description 8
- 229910052749 magnesium Inorganic materials 0.000 claims description 8
- VSZWPYCFIRKVQL-UHFFFAOYSA-N selanylidenegallium;selenium Chemical compound [Se].[Se]=[Ga].[Se]=[Ga] VSZWPYCFIRKVQL-UHFFFAOYSA-N 0.000 claims description 8
- 229910052712 strontium Inorganic materials 0.000 claims description 8
- 229910052719 titanium Inorganic materials 0.000 claims description 8
- 229910052727 yttrium Inorganic materials 0.000 claims description 8
- VWQVUPCCIRVNHF-UHFFFAOYSA-N yttrium atom Chemical compound [Y] VWQVUPCCIRVNHF-UHFFFAOYSA-N 0.000 claims description 8
- CIOAGBVUUVVLOB-UHFFFAOYSA-N strontium atom Chemical compound [Sr] CIOAGBVUUVVLOB-UHFFFAOYSA-N 0.000 claims description 7
- 229910052684 Cerium Inorganic materials 0.000 claims description 6
- GWXLDORMOJMVQZ-UHFFFAOYSA-N cerium Chemical compound [Ce] GWXLDORMOJMVQZ-UHFFFAOYSA-N 0.000 claims description 6
- PPQREHKVAOVYBT-UHFFFAOYSA-H dialuminum;tricarbonate Chemical compound [Al+3].[Al+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O PPQREHKVAOVYBT-UHFFFAOYSA-H 0.000 claims description 6
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims description 6
- POILWHVDKZOXJZ-ARJAWSKDSA-M (z)-4-oxopent-2-en-2-olate Chemical compound C\C([O-])=C\C(C)=O POILWHVDKZOXJZ-ARJAWSKDSA-M 0.000 claims description 4
- HDYRYUINDGQKMC-UHFFFAOYSA-M acetyloxyaluminum;dihydrate Chemical compound O.O.CC(=O)O[Al] HDYRYUINDGQKMC-UHFFFAOYSA-M 0.000 claims description 4
- WNROFYMDJYEPJX-UHFFFAOYSA-K aluminium hydroxide Chemical compound [OH-].[OH-].[OH-].[Al+3] WNROFYMDJYEPJX-UHFFFAOYSA-K 0.000 claims description 4
- 229940009827 aluminum acetate Drugs 0.000 claims description 4
- 150000004677 hydrates Chemical class 0.000 claims description 4
- 229910001507 metal halide Inorganic materials 0.000 claims description 4
- 150000005309 metal halides Chemical class 0.000 claims description 4
- BNGXYYYYKUGPPF-UHFFFAOYSA-M (3-methylphenyl)methyl-triphenylphosphanium;chloride Chemical compound [Cl-].CC1=CC=CC(C[P+](C=2C=CC=CC=2)(C=2C=CC=CC=2)C=2C=CC=CC=2)=C1 BNGXYYYYKUGPPF-UHFFFAOYSA-M 0.000 claims description 3
- XBIUWALDKXACEA-UHFFFAOYSA-N 3-[bis(2,4-dioxopentan-3-yl)alumanyl]pentane-2,4-dione Chemical compound CC(=O)C(C(C)=O)[Al](C(C(C)=O)C(C)=O)C(C(C)=O)C(C)=O XBIUWALDKXACEA-UHFFFAOYSA-N 0.000 claims description 3
- ZUGAOYSWHHGDJY-UHFFFAOYSA-K 5-hydroxy-2,8,9-trioxa-1-aluminabicyclo[3.3.2]decane-3,7,10-trione Chemical compound [Al+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O ZUGAOYSWHHGDJY-UHFFFAOYSA-K 0.000 claims description 3
- QTBSBXVTEAMEQO-UHFFFAOYSA-M Acetate Chemical compound CC([O-])=O QTBSBXVTEAMEQO-UHFFFAOYSA-M 0.000 claims description 3
- BTBUEUYNUDRHOZ-UHFFFAOYSA-N Borate Chemical compound [O-]B([O-])[O-] BTBUEUYNUDRHOZ-UHFFFAOYSA-N 0.000 claims description 3
- BVKZGUZCCUSVTD-UHFFFAOYSA-L Carbonate Chemical compound [O-]C([O-])=O BVKZGUZCCUSVTD-UHFFFAOYSA-L 0.000 claims description 3
- KRKNYBCHXYNGOX-UHFFFAOYSA-K Citrate Chemical compound [O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O KRKNYBCHXYNGOX-UHFFFAOYSA-K 0.000 claims description 3
- 229910004129 HfSiO Inorganic materials 0.000 claims description 3
- GNVMUORYQLCPJZ-UHFFFAOYSA-M Thiocarbamate Chemical compound NC([S-])=O GNVMUORYQLCPJZ-UHFFFAOYSA-M 0.000 claims description 3
- 229910006501 ZrSiO Inorganic materials 0.000 claims description 3
- YNCSJKSBOHUXLN-UHFFFAOYSA-K [Al+3].NC([O-])=S.NC([O-])=S.NC([O-])=S Chemical compound [Al+3].NC([O-])=S.NC([O-])=S.NC([O-])=S YNCSJKSBOHUXLN-UHFFFAOYSA-K 0.000 claims description 3
- 150000004703 alkoxides Chemical class 0.000 claims description 3
- 229940118662 aluminum carbonate Drugs 0.000 claims description 3
- OJMOMXZKOWKUTA-UHFFFAOYSA-N aluminum;borate Chemical compound [Al+3].[O-]B([O-])[O-] OJMOMXZKOWKUTA-UHFFFAOYSA-N 0.000 claims description 3
- XPYAVGLVLGDIEN-UHFFFAOYSA-K aluminum;undecanoate Chemical compound [Al+3].CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O XPYAVGLVLGDIEN-UHFFFAOYSA-K 0.000 claims description 3
- 229910000000 metal hydroxide Inorganic materials 0.000 claims description 3
- 150000004692 metal hydroxides Chemical class 0.000 claims description 3
- 229910001960 metal nitrate Inorganic materials 0.000 claims description 3
- 229910052715 tantalum Inorganic materials 0.000 claims description 3
- GUVRBAGPIYLISA-UHFFFAOYSA-N tantalum atom Chemical compound [Ta] GUVRBAGPIYLISA-UHFFFAOYSA-N 0.000 claims description 3
- ZDPHROOEEOARMN-UHFFFAOYSA-M undecanoate Chemical compound CCCCCCCCCCC([O-])=O ZDPHROOEEOARMN-UHFFFAOYSA-M 0.000 claims description 3
- 229910052787 antimony Inorganic materials 0.000 claims 4
- WATWJIUSRGPENY-UHFFFAOYSA-N antimony atom Chemical compound [Sb] WATWJIUSRGPENY-UHFFFAOYSA-N 0.000 claims 4
- 150000001335 aliphatic alkanes Chemical class 0.000 claims 1
- 150000004820 halides Chemical class 0.000 claims 1
- 230000003647 oxidation Effects 0.000 claims 1
- 238000007254 oxidation reaction Methods 0.000 claims 1
- 239000010410 layer Substances 0.000 description 104
- 239000000243 solution Substances 0.000 description 34
- 230000000052 comparative effect Effects 0.000 description 13
- 239000000758 substrate Substances 0.000 description 13
- WEVYAHXRMPXWCK-UHFFFAOYSA-N Acetonitrile Chemical compound CC#N WEVYAHXRMPXWCK-UHFFFAOYSA-N 0.000 description 12
- LYCAIKOWRPUZTN-UHFFFAOYSA-N Ethylene glycol Chemical compound OCCO LYCAIKOWRPUZTN-UHFFFAOYSA-N 0.000 description 12
- 239000011701 zinc Substances 0.000 description 9
- 229910052725 zinc Inorganic materials 0.000 description 9
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 description 6
- 230000005540 biological transmission Effects 0.000 description 6
- 239000010408 film Substances 0.000 description 6
- 238000002360 preparation method Methods 0.000 description 6
- 239000002904 solvent Substances 0.000 description 6
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 description 5
- KFZMGEQAYNKOFK-UHFFFAOYSA-N Isopropanol Chemical compound CC(C)O KFZMGEQAYNKOFK-UHFFFAOYSA-N 0.000 description 4
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 4
- 229940093476 ethylene glycol Drugs 0.000 description 4
- 239000000395 magnesium oxide Substances 0.000 description 4
- CPLXHLVBOLITMK-UHFFFAOYSA-N magnesium oxide Inorganic materials [Mg]=O CPLXHLVBOLITMK-UHFFFAOYSA-N 0.000 description 4
- AXZKOIWUVFPNLO-UHFFFAOYSA-N magnesium;oxygen(2-) Chemical compound [O-2].[Mg+2] AXZKOIWUVFPNLO-UHFFFAOYSA-N 0.000 description 4
- IATRAKWUXMZMIY-UHFFFAOYSA-N strontium oxide Chemical compound [O-2].[Sr+2] IATRAKWUXMZMIY-UHFFFAOYSA-N 0.000 description 4
- OGIDPMRJRNCKJF-UHFFFAOYSA-N titanium oxide Inorganic materials [Ti]=O OGIDPMRJRNCKJF-UHFFFAOYSA-N 0.000 description 4
- JIAARYAFYJHUJI-UHFFFAOYSA-L zinc dichloride Chemical compound [Cl-].[Cl-].[Zn+2] JIAARYAFYJHUJI-UHFFFAOYSA-L 0.000 description 4
- CSCPPACGZOOCGX-UHFFFAOYSA-N Acetone Chemical compound CC(C)=O CSCPPACGZOOCGX-UHFFFAOYSA-N 0.000 description 3
- RTZKZFJDLAIYFH-UHFFFAOYSA-N Diethyl ether Chemical compound CCOCC RTZKZFJDLAIYFH-UHFFFAOYSA-N 0.000 description 3
- XEKOWRVHYACXOJ-UHFFFAOYSA-N Ethyl acetate Chemical compound CCOC(C)=O XEKOWRVHYACXOJ-UHFFFAOYSA-N 0.000 description 3
- OKKJLVBELUTLKV-UHFFFAOYSA-N Methanol Chemical compound OC OKKJLVBELUTLKV-UHFFFAOYSA-N 0.000 description 3
- YXFVVABEGXRONW-UHFFFAOYSA-N Toluene Chemical compound CC1=CC=CC=C1 YXFVVABEGXRONW-UHFFFAOYSA-N 0.000 description 3
- PNEYBMLMFCGWSK-UHFFFAOYSA-N aluminium oxide Inorganic materials [O-2].[O-2].[O-2].[Al+3].[Al+3] PNEYBMLMFCGWSK-UHFFFAOYSA-N 0.000 description 3
- QVQLCTNNEUAWMS-UHFFFAOYSA-N barium oxide Chemical compound [Ba]=O QVQLCTNNEUAWMS-UHFFFAOYSA-N 0.000 description 3
- MTHSVFCYNBDYFN-UHFFFAOYSA-N diethylene glycol Chemical compound OCCOCCO MTHSVFCYNBDYFN-UHFFFAOYSA-N 0.000 description 3
- 239000011521 glass Substances 0.000 description 3
- 229910000449 hafnium oxide Inorganic materials 0.000 description 3
- WIHZLLGSGQNAGK-UHFFFAOYSA-N hafnium(4+);oxygen(2-) Chemical compound [O-2].[O-2].[Hf+4] WIHZLLGSGQNAGK-UHFFFAOYSA-N 0.000 description 3
- 239000012046 mixed solvent Substances 0.000 description 3
- 239000000203 mixture Substances 0.000 description 3
- VLKZOEOYAKHREP-UHFFFAOYSA-N n-Hexane Chemical compound CCCCCC VLKZOEOYAKHREP-UHFFFAOYSA-N 0.000 description 3
- 239000012299 nitrogen atmosphere Substances 0.000 description 3
- 239000011241 protective layer Substances 0.000 description 3
- 229910001925 ruthenium oxide Inorganic materials 0.000 description 3
- WOCIAKWEIIZHES-UHFFFAOYSA-N ruthenium(iv) oxide Chemical compound O=[Ru]=O WOCIAKWEIIZHES-UHFFFAOYSA-N 0.000 description 3
- ARXJGSRGQADJSQ-UHFFFAOYSA-N 1-methoxypropan-2-ol Chemical compound COCC(C)O ARXJGSRGQADJSQ-UHFFFAOYSA-N 0.000 description 2
- CUDYYMUUJHLCGZ-UHFFFAOYSA-N 2-(2-methoxypropoxy)propan-1-ol Chemical compound COC(C)COC(C)CO CUDYYMUUJHLCGZ-UHFFFAOYSA-N 0.000 description 2
- XNWFRZJHXBZDAG-UHFFFAOYSA-N 2-METHOXYETHANOL Chemical compound COCCO XNWFRZJHXBZDAG-UHFFFAOYSA-N 0.000 description 2
- ZNQVEEAIQZEUHB-UHFFFAOYSA-N 2-ethoxyethanol Chemical compound CCOCCO ZNQVEEAIQZEUHB-UHFFFAOYSA-N 0.000 description 2
- XLLIQLLCWZCATF-UHFFFAOYSA-N 2-methoxyethyl acetate Chemical compound COCCOC(C)=O XLLIQLLCWZCATF-UHFFFAOYSA-N 0.000 description 2
- ODINCKMPIJJUCX-UHFFFAOYSA-N Calcium oxide Chemical compound [Ca]=O ODINCKMPIJJUCX-UHFFFAOYSA-N 0.000 description 2
- XTHFKEDIFFGKHM-UHFFFAOYSA-N Dimethoxyethane Chemical compound COCCOC XTHFKEDIFFGKHM-UHFFFAOYSA-N 0.000 description 2
- LFQSCWFLJHTTHZ-UHFFFAOYSA-N Ethanol Chemical compound CCO LFQSCWFLJHTTHZ-UHFFFAOYSA-N 0.000 description 2
- FXHOOIRPVKKKFG-UHFFFAOYSA-N N,N-Dimethylacetamide Chemical compound CN(C)C(C)=O FXHOOIRPVKKKFG-UHFFFAOYSA-N 0.000 description 2
- IMNFDUFMRHMDMM-UHFFFAOYSA-N N-Heptane Chemical compound CCCCCCC IMNFDUFMRHMDMM-UHFFFAOYSA-N 0.000 description 2
- SECXISVLQFMRJM-UHFFFAOYSA-N N-Methylpyrrolidone Chemical compound CN1CCCC1=O SECXISVLQFMRJM-UHFFFAOYSA-N 0.000 description 2
- KJTLSVCANCCWHF-UHFFFAOYSA-N Ruthenium Chemical compound [Ru] KJTLSVCANCCWHF-UHFFFAOYSA-N 0.000 description 2
- WYURNTSHIVDZCO-UHFFFAOYSA-N Tetrahydrofuran Chemical compound C1CCOC1 WYURNTSHIVDZCO-UHFFFAOYSA-N 0.000 description 2
- YRKCREAYFQTBPV-UHFFFAOYSA-N acetylacetone Chemical compound CC(=O)CC(C)=O YRKCREAYFQTBPV-UHFFFAOYSA-N 0.000 description 2
- VSCWAEJMTAWNJL-UHFFFAOYSA-K aluminium trichloride Chemical compound Cl[Al](Cl)Cl VSCWAEJMTAWNJL-UHFFFAOYSA-K 0.000 description 2
- 238000000231 atomic layer deposition Methods 0.000 description 2
- 229910052797 bismuth Inorganic materials 0.000 description 2
- JCXGWMGPZLAOME-UHFFFAOYSA-N bismuth atom Chemical compound [Bi] JCXGWMGPZLAOME-UHFFFAOYSA-N 0.000 description 2
- 229910000420 cerium oxide Inorganic materials 0.000 description 2
- 239000011248 coating agent Substances 0.000 description 2
- 238000000576 coating method Methods 0.000 description 2
- 239000003086 colorant Substances 0.000 description 2
- 239000004020 conductor Substances 0.000 description 2
- JHIVVAPYMSGYDF-UHFFFAOYSA-N cyclohexanone Chemical compound O=C1CCCCC1 JHIVVAPYMSGYDF-UHFFFAOYSA-N 0.000 description 2
- SBZXBUIDTXKZTM-UHFFFAOYSA-N diglyme Chemical compound COCCOCCOC SBZXBUIDTXKZTM-UHFFFAOYSA-N 0.000 description 2
- 238000007598 dipping method Methods 0.000 description 2
- 238000007714 electro crystallization reaction Methods 0.000 description 2
- GNPVGFCGXDBREM-UHFFFAOYSA-N germanium atom Chemical compound [Ge] GNPVGFCGXDBREM-UHFFFAOYSA-N 0.000 description 2
- PSCMQHVBLHHWTO-UHFFFAOYSA-K indium(iii) chloride Chemical compound Cl[In](Cl)Cl PSCMQHVBLHHWTO-UHFFFAOYSA-K 0.000 description 2
- AMGQUBHHOARCQH-UHFFFAOYSA-N indium;oxotin Chemical compound [In].[Sn]=O AMGQUBHHOARCQH-UHFFFAOYSA-N 0.000 description 2
- 238000002347 injection Methods 0.000 description 2
- 239000007924 injection Substances 0.000 description 2
- 238000007641 inkjet printing Methods 0.000 description 2
- 238000009413 insulation Methods 0.000 description 2
- 239000004973 liquid crystal related substance Substances 0.000 description 2
- 238000001459 lithography Methods 0.000 description 2
- 239000011368 organic material Substances 0.000 description 2
- BMMGVYCKOGBVEV-UHFFFAOYSA-N oxo(oxoceriooxy)cerium Chemical compound [Ce]=O.O=[Ce]=O BMMGVYCKOGBVEV-UHFFFAOYSA-N 0.000 description 2
- SIWVEOZUMHYXCS-UHFFFAOYSA-N oxo(oxoyttriooxy)yttrium Chemical compound O=[Y]O[Y]=O SIWVEOZUMHYXCS-UHFFFAOYSA-N 0.000 description 2
- KYKLWYKWCAYAJY-UHFFFAOYSA-N oxotin;zinc Chemical compound [Zn].[Sn]=O KYKLWYKWCAYAJY-UHFFFAOYSA-N 0.000 description 2
- RVTZCBVAJQQJTK-UHFFFAOYSA-N oxygen(2-);zirconium(4+) Chemical compound [O-2].[O-2].[Zr+4] RVTZCBVAJQQJTK-UHFFFAOYSA-N 0.000 description 2
- 229910052707 ruthenium Inorganic materials 0.000 description 2
- 238000004528 spin coating Methods 0.000 description 2
- 238000005507 spraying Methods 0.000 description 2
- GZCWPZJOEIAXRU-UHFFFAOYSA-N tin zinc Chemical compound [Zn].[Sn] GZCWPZJOEIAXRU-UHFFFAOYSA-N 0.000 description 2
- HPGGPRDJHPYFRM-UHFFFAOYSA-J tin(iv) chloride Chemical compound Cl[Sn](Cl)(Cl)Cl HPGGPRDJHPYFRM-UHFFFAOYSA-J 0.000 description 2
- 239000011592 zinc chloride Substances 0.000 description 2
- 235000005074 zinc chloride Nutrition 0.000 description 2
- BHHYHSUAOQUXJK-UHFFFAOYSA-L zinc fluoride Chemical compound F[Zn]F BHHYHSUAOQUXJK-UHFFFAOYSA-L 0.000 description 2
- YVTHLONGBIQYBO-UHFFFAOYSA-N zinc indium(3+) oxygen(2-) Chemical compound [O--].[Zn++].[In+3] YVTHLONGBIQYBO-UHFFFAOYSA-N 0.000 description 2
- ONDPHDOFVYQSGI-UHFFFAOYSA-N zinc nitrate Chemical compound [Zn+2].[O-][N+]([O-])=O.[O-][N+]([O-])=O ONDPHDOFVYQSGI-UHFFFAOYSA-N 0.000 description 2
- 239000011787 zinc oxide Substances 0.000 description 2
- 229910001928 zirconium oxide Inorganic materials 0.000 description 2
- RMSOEGBYNWXXBG-UHFFFAOYSA-N 1-chloronaphthalen-2-ol Chemical compound C1=CC=CC2=C(Cl)C(O)=CC=C21 RMSOEGBYNWXXBG-UHFFFAOYSA-N 0.000 description 1
- FENFUOGYJVOCRY-UHFFFAOYSA-N 1-propoxypropan-2-ol Chemical compound CCCOCC(C)O FENFUOGYJVOCRY-UHFFFAOYSA-N 0.000 description 1
- SBASXUCJHJRPEV-UHFFFAOYSA-N 2-(2-methoxyethoxy)ethanol Chemical compound COCCOCCO SBASXUCJHJRPEV-UHFFFAOYSA-N 0.000 description 1
- POAOYUHQDCAZBD-UHFFFAOYSA-N 2-butoxyethanol Chemical compound CCCCOCCO POAOYUHQDCAZBD-UHFFFAOYSA-N 0.000 description 1
- PASUDGKNNPSRBK-UHFFFAOYSA-N 2-ethoxy-2-methylbutanoic acid Chemical compound CCOC(C)(CC)C(O)=O PASUDGKNNPSRBK-UHFFFAOYSA-N 0.000 description 1
- 229940093475 2-ethoxyethanol Drugs 0.000 description 1
- SVONRAPFKPVNKG-UHFFFAOYSA-N 2-ethoxyethyl acetate Chemical compound CCOCCOC(C)=O SVONRAPFKPVNKG-UHFFFAOYSA-N 0.000 description 1
- VSEUCCPAJZHJSX-UHFFFAOYSA-K 2-hydroxypropane-1,2,3-tricarboxylate;indium(3+) Chemical compound [In+3].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O VSEUCCPAJZHJSX-UHFFFAOYSA-K 0.000 description 1
- CQMNNMLVXSWLCH-UHFFFAOYSA-B 2-hydroxypropane-1,2,3-tricarboxylate;tin(4+) Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O CQMNNMLVXSWLCH-UHFFFAOYSA-B 0.000 description 1
- BKBZFJRHYSCZQA-UHFFFAOYSA-N 2-methoxy-2-methylpropanoic acid Chemical compound COC(C)(C)C(O)=O BKBZFJRHYSCZQA-UHFFFAOYSA-N 0.000 description 1
- YEYKMVJDLWJFOA-UHFFFAOYSA-N 2-propoxyethanol Chemical compound CCCOCCO YEYKMVJDLWJFOA-UHFFFAOYSA-N 0.000 description 1
- DKPFZGUDAPQIHT-UHFFFAOYSA-N Butyl acetate Natural products CCCCOC(C)=O DKPFZGUDAPQIHT-UHFFFAOYSA-N 0.000 description 1
- OQRWHHQVBZIVOG-UHFFFAOYSA-J C(CCCCCCCCCC)(=O)[O-].[Sn+4].C(CCCCCCCCCC)(=O)[O-].C(CCCCCCCCCC)(=O)[O-].C(CCCCCCCCCC)(=O)[O-] Chemical compound C(CCCCCCCCCC)(=O)[O-].[Sn+4].C(CCCCCCCCCC)(=O)[O-].C(CCCCCCCCCC)(=O)[O-].C(CCCCCCCCCC)(=O)[O-] OQRWHHQVBZIVOG-UHFFFAOYSA-J 0.000 description 1
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 description 1
- NTIZESTWPVYFNL-UHFFFAOYSA-N Methyl isobutyl ketone Chemical compound CC(C)CC(C)=O NTIZESTWPVYFNL-UHFFFAOYSA-N 0.000 description 1
- UIHCLUNTQKBZGK-UHFFFAOYSA-N Methyl isobutyl ketone Natural products CCC(C)C(C)=O UIHCLUNTQKBZGK-UHFFFAOYSA-N 0.000 description 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 description 1
- CTQNGGLPUBDAKN-UHFFFAOYSA-N O-Xylene Chemical compound CC1=CC=CC=C1C CTQNGGLPUBDAKN-UHFFFAOYSA-N 0.000 description 1
- HXJSOWKTZPJPSS-UHFFFAOYSA-K O-dicarbamothioyloxyindiganyl carbamothioate Chemical compound [In+3].NC([O-])=S.NC([O-])=S.NC([O-])=S HXJSOWKTZPJPSS-UHFFFAOYSA-K 0.000 description 1
- PKVGKJDLLALEMP-UHFFFAOYSA-N O=C1CCCO1.O=C1CCCO1 Chemical compound O=C1CCCO1.O=C1CCCO1 PKVGKJDLLALEMP-UHFFFAOYSA-N 0.000 description 1
- XURCIPRUUASYLR-UHFFFAOYSA-N Omeprazole sulfide Chemical compound N=1C2=CC(OC)=CC=C2NC=1SCC1=NC=C(C)C(OC)=C1C XURCIPRUUASYLR-UHFFFAOYSA-N 0.000 description 1
- DTQVDTLACAAQTR-UHFFFAOYSA-M Trifluoroacetate Chemical compound [O-]C(=O)C(F)(F)F DTQVDTLACAAQTR-UHFFFAOYSA-M 0.000 description 1
- 229910052769 Ytterbium Inorganic materials 0.000 description 1
- FMRLDPWIRHBCCC-UHFFFAOYSA-L Zinc carbonate Chemical compound [Zn+2].[O-]C([O-])=O FMRLDPWIRHBCCC-UHFFFAOYSA-L 0.000 description 1
- GSYZEUFATJYTFJ-UHFFFAOYSA-K [In+3].CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O Chemical compound [In+3].CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O GSYZEUFATJYTFJ-UHFFFAOYSA-K 0.000 description 1
- SVGRGTIMCCAWGJ-UHFFFAOYSA-J [Sn+4].NC([O-])=S.NC([O-])=S.NC([O-])=S.NC([O-])=S Chemical compound [Sn+4].NC([O-])=S.NC([O-])=S.NC([O-])=S.NC([O-])=S SVGRGTIMCCAWGJ-UHFFFAOYSA-J 0.000 description 1
- ZOIORXHNWRGPMV-UHFFFAOYSA-N acetic acid;zinc Chemical compound [Zn].CC(O)=O.CC(O)=O ZOIORXHNWRGPMV-UHFFFAOYSA-N 0.000 description 1
- 239000004411 aluminium Substances 0.000 description 1
- 229910000410 antimony oxide Inorganic materials 0.000 description 1
- 229940043232 butyl acetate Drugs 0.000 description 1
- 239000003990 capacitor Substances 0.000 description 1
- 239000008367 deionised water Substances 0.000 description 1
- 229910021641 deionized water Inorganic materials 0.000 description 1
- VBXWCGWXDOBUQZ-UHFFFAOYSA-K diacetyloxyindiganyl acetate Chemical compound [In+3].CC([O-])=O.CC([O-])=O.CC([O-])=O VBXWCGWXDOBUQZ-UHFFFAOYSA-K 0.000 description 1
- 229960004132 diethyl ether Drugs 0.000 description 1
- XXJWXESWEXIICW-UHFFFAOYSA-N diethylene glycol monoethyl ether Chemical compound CCOCCOCCO XXJWXESWEXIICW-UHFFFAOYSA-N 0.000 description 1
- UXGNZZKBCMGWAZ-UHFFFAOYSA-N dimethylformamide dmf Chemical compound CN(C)C=O.CN(C)C=O UXGNZZKBCMGWAZ-UHFFFAOYSA-N 0.000 description 1
- 238000001962 electrophoresis Methods 0.000 description 1
- 229940093499 ethyl acetate Drugs 0.000 description 1
- 235000019439 ethyl acetate Nutrition 0.000 description 1
- 238000011156 evaluation Methods 0.000 description 1
- 229910052733 gallium Inorganic materials 0.000 description 1
- PDPJQWYGJJBYLF-UHFFFAOYSA-J hafnium tetrachloride Chemical compound Cl[Hf](Cl)(Cl)Cl PDPJQWYGJJBYLF-UHFFFAOYSA-J 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- FUZZWVXGSFPDMH-UHFFFAOYSA-N hexanoic acid Chemical compound CCCCCC(O)=O FUZZWVXGSFPDMH-UHFFFAOYSA-N 0.000 description 1
- 230000005525 hole transport Effects 0.000 description 1
- SKWCWFYBFZIXHE-UHFFFAOYSA-K indium acetylacetonate Chemical compound CC(=O)C=C(C)O[In](OC(C)=CC(C)=O)OC(C)=CC(C)=O SKWCWFYBFZIXHE-UHFFFAOYSA-K 0.000 description 1
- JNOXFAKBEFRROH-UHFFFAOYSA-N indium(3+);borate Chemical compound [In+3].[O-]B([O-])[O-] JNOXFAKBEFRROH-UHFFFAOYSA-N 0.000 description 1
- AMNSWIGOPDBSIE-UHFFFAOYSA-H indium(3+);tricarbonate Chemical compound [In+3].[In+3].[O-]C([O-])=O.[O-]C([O-])=O.[O-]C([O-])=O AMNSWIGOPDBSIE-UHFFFAOYSA-H 0.000 description 1
- IGUXCTSQIGAGSV-UHFFFAOYSA-K indium(iii) hydroxide Chemical compound [OH-].[OH-].[OH-].[In+3] IGUXCTSQIGAGSV-UHFFFAOYSA-K 0.000 description 1
- 229910010272 inorganic material Inorganic materials 0.000 description 1
- 239000011147 inorganic material Substances 0.000 description 1
- 239000007788 liquid Substances 0.000 description 1
- 239000000463 material Substances 0.000 description 1
- 239000011159 matrix material Substances 0.000 description 1
- 229940043265 methyl isobutyl ketone Drugs 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 229910052750 molybdenum Inorganic materials 0.000 description 1
- 239000011733 molybdenum Substances 0.000 description 1
- QWDUNBOWGVRUCG-UHFFFAOYSA-N n-(4-chloro-2-nitrophenyl)acetamide Chemical compound CC(=O)NC1=CC=C(Cl)C=C1[N+]([O-])=O QWDUNBOWGVRUCG-UHFFFAOYSA-N 0.000 description 1
- TVMXDCGIABBOFY-UHFFFAOYSA-N octane Chemical compound CCCCCCCC TVMXDCGIABBOFY-UHFFFAOYSA-N 0.000 description 1
- VTRUBDSFZJNXHI-UHFFFAOYSA-N oxoantimony Chemical compound [Sb]=O VTRUBDSFZJNXHI-UHFFFAOYSA-N 0.000 description 1
- UFQXGXDIJMBKTC-UHFFFAOYSA-N oxostrontium Chemical compound [Sr]=O UFQXGXDIJMBKTC-UHFFFAOYSA-N 0.000 description 1
- 238000000206 photolithography Methods 0.000 description 1
- 229920006254 polymer film Polymers 0.000 description 1
- 229920000307 polymer substrate Polymers 0.000 description 1
- BDERNNFJNOPAEC-UHFFFAOYSA-N propan-1-ol Chemical compound CCCO BDERNNFJNOPAEC-UHFFFAOYSA-N 0.000 description 1
- LLHKCFNBLRBOGN-UHFFFAOYSA-N propylene glycol methyl ether acetate Chemical compound COCC(C)OC(C)=O LLHKCFNBLRBOGN-UHFFFAOYSA-N 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 230000003746 surface roughness Effects 0.000 description 1
- YXORMQLUBYWEIO-UHFFFAOYSA-F tetrafluorostannane Chemical compound F[Sn](F)(F)F.F[Sn](F)(F)F YXORMQLUBYWEIO-UHFFFAOYSA-F 0.000 description 1
- YLQBMQCUIZJEEH-UHFFFAOYSA-N tetrahydrofuran Natural products C=1C=COC=1 YLQBMQCUIZJEEH-UHFFFAOYSA-N 0.000 description 1
- RYSQYJQRXZRRPH-UHFFFAOYSA-J tin(4+);dicarbonate Chemical compound [Sn+4].[O-]C([O-])=O.[O-]C([O-])=O RYSQYJQRXZRRPH-UHFFFAOYSA-J 0.000 description 1
- CVNKFOIOZXAFBO-UHFFFAOYSA-J tin(4+);tetrahydroxide Chemical compound [OH-].[OH-].[OH-].[OH-].[Sn+4] CVNKFOIOZXAFBO-UHFFFAOYSA-J 0.000 description 1
- YJGJRYWNNHUESM-UHFFFAOYSA-J triacetyloxystannyl acetate Chemical compound [Sn+4].CC([O-])=O.CC([O-])=O.CC([O-])=O.CC([O-])=O YJGJRYWNNHUESM-UHFFFAOYSA-J 0.000 description 1
- YQMWDQQWGKVOSQ-UHFFFAOYSA-N trinitrooxystannyl nitrate Chemical compound [Sn+4].[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O.[O-][N+]([O-])=O YQMWDQQWGKVOSQ-UHFFFAOYSA-N 0.000 description 1
- ZRQNRTRXAVFCMB-UHFFFAOYSA-N tris(2,4,5-trioxa-1-stanna-3-borabicyclo[1.1.1]pentan-1-yl) borate Chemical compound [Sn+4].[Sn+4].[Sn+4].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-].[O-]B([O-])[O-] ZRQNRTRXAVFCMB-UHFFFAOYSA-N 0.000 description 1
- WGIWBXUNRXCYRA-UHFFFAOYSA-H trizinc;2-hydroxypropane-1,2,3-tricarboxylate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O.[O-]C(=O)CC(O)(CC([O-])=O)C([O-])=O WGIWBXUNRXCYRA-UHFFFAOYSA-H 0.000 description 1
- BIKXLKXABVUSMH-UHFFFAOYSA-N trizinc;diborate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]B([O-])[O-].[O-]B([O-])[O-] BIKXLKXABVUSMH-UHFFFAOYSA-N 0.000 description 1
- XLYOFNOQVPJJNP-UHFFFAOYSA-N water Chemical compound O XLYOFNOQVPJJNP-UHFFFAOYSA-N 0.000 description 1
- 239000008096 xylene Substances 0.000 description 1
- NAWDYIZEMPQZHO-UHFFFAOYSA-N ytterbium Chemical compound [Yb] NAWDYIZEMPQZHO-UHFFFAOYSA-N 0.000 description 1
- 239000004246 zinc acetate Substances 0.000 description 1
- 239000011667 zinc carbonate Substances 0.000 description 1
- 235000004416 zinc carbonate Nutrition 0.000 description 1
- 229910000010 zinc carbonate Inorganic materials 0.000 description 1
- 239000011746 zinc citrate Substances 0.000 description 1
- 235000006076 zinc citrate Nutrition 0.000 description 1
- 229940068475 zinc citrate Drugs 0.000 description 1
- UGZADUVQMDAIAO-UHFFFAOYSA-L zinc hydroxide Chemical compound [OH-].[OH-].[Zn+2] UGZADUVQMDAIAO-UHFFFAOYSA-L 0.000 description 1
- 229910021511 zinc hydroxide Inorganic materials 0.000 description 1
- 229940007718 zinc hydroxide Drugs 0.000 description 1
- LRXTYHSAJDENHV-UHFFFAOYSA-H zinc phosphate Chemical compound [Zn+2].[Zn+2].[Zn+2].[O-]P([O-])([O-])=O.[O-]P([O-])([O-])=O LRXTYHSAJDENHV-UHFFFAOYSA-H 0.000 description 1
- 229910000165 zinc phosphate Inorganic materials 0.000 description 1
- ZMLPZCGHASSGEA-UHFFFAOYSA-M zinc trifluoromethanesulfonate Chemical compound [Zn+2].[O-]S(=O)(=O)C(F)(F)F ZMLPZCGHASSGEA-UHFFFAOYSA-M 0.000 description 1
- CITILBVTAYEWKR-UHFFFAOYSA-L zinc trifluoromethanesulfonate Substances [Zn+2].[O-]S(=O)(=O)C(F)(F)F.[O-]S(=O)(=O)C(F)(F)F CITILBVTAYEWKR-UHFFFAOYSA-L 0.000 description 1
- VCQWRGCXUWPSGY-UHFFFAOYSA-L zinc;2,2,2-trifluoroacetate Chemical compound [Zn+2].[O-]C(=O)C(F)(F)F.[O-]C(=O)C(F)(F)F VCQWRGCXUWPSGY-UHFFFAOYSA-L 0.000 description 1
- SQOXTAJBVHQIOO-UHFFFAOYSA-L zinc;dicarbamothioate Chemical compound [Zn+2].NC([O-])=S.NC([O-])=S SQOXTAJBVHQIOO-UHFFFAOYSA-L 0.000 description 1
- RXBXBWBHKPGHIB-UHFFFAOYSA-L zinc;diperchlorate Chemical compound [Zn+2].[O-]Cl(=O)(=O)=O.[O-]Cl(=O)(=O)=O RXBXBWBHKPGHIB-UHFFFAOYSA-L 0.000 description 1
- NHXVNEDMKGDNPR-UHFFFAOYSA-N zinc;pentane-2,4-dione Chemical compound [Zn+2].CC(=O)[CH-]C(C)=O.CC(=O)[CH-]C(C)=O NHXVNEDMKGDNPR-UHFFFAOYSA-N 0.000 description 1
- OBOMINCSAYZPGH-UHFFFAOYSA-L zinc;undecanoate Chemical compound [Zn+2].CCCCCCCCCCC([O-])=O.CCCCCCCCCCC([O-])=O OBOMINCSAYZPGH-UHFFFAOYSA-L 0.000 description 1
- DUBNHZYBDBBJHD-UHFFFAOYSA-L ziram Chemical compound [Zn+2].CN(C)C([S-])=S.CN(C)C([S-])=S DUBNHZYBDBBJHD-UHFFFAOYSA-L 0.000 description 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/4908—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET for thin film semiconductor, e.g. gate of TFT
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02175—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal
- H01L21/02178—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides characterised by the metal the material containing aluminium, e.g. Al2O3
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1222—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer
- H01L27/1225—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a particular composition, shape or crystalline structure of the active layer with semiconductor materials not belonging to the group IV of the periodic table, e.g. InGaZnO
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/12—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body
- H01L27/1214—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs
- H01L27/1237—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being other than a semiconductor body, e.g. an insulating body comprising a plurality of TFTs formed on a non-semiconducting substrate, e.g. driving circuits for AMLCDs with a different composition, shape, layout or thickness of the gate insulator in different devices
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
- H01L29/12—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/24—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by the materials of which they are formed including, apart from doping materials or other impurities, only semiconductor materials not provided for in groups H01L29/16, H01L29/18, H01L29/20, H01L29/22
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
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- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/43—Electrodes ; Multistep manufacturing processes therefor characterised by the materials of which they are formed
- H01L29/49—Metal-insulator-semiconductor electrodes, e.g. gates of MOSFET
- H01L29/51—Insulating materials associated therewith
- H01L29/517—Insulating materials associated therewith the insulating material comprising a metallic compound, e.g. metal oxide, metal silicate
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/786—Thin film transistors, i.e. transistors with a channel being at least partly a thin film
- H01L29/7869—Thin film transistors, i.e. transistors with a channel being at least partly a thin film having a semiconductor body comprising an oxide semiconductor material, e.g. zinc oxide, copper aluminium oxide, cadmium stannate
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Ceramic Engineering (AREA)
- Chemical & Material Sciences (AREA)
- Crystallography & Structural Chemistry (AREA)
- Manufacturing & Machinery (AREA)
- Thin Film Transistor (AREA)
Description
本發明係揭露一種薄膜電晶體及其製造方法及包含該薄膜電晶體之顯示裝置。
電子元件如電阻、電容、二極體、薄膜電晶體等元件係應用於各種領域。特別地,薄膜電晶體(TFT)用以於如液晶顯示器(LCD)、有機發光二極體顯示器(OLED)、電泳顯示器等之顯示裝置中作為開關元件及驅動元件。
薄膜電晶體中之半導體及閘極絕緣層為決定裝置特性之重要元件。閘極絕緣層係主要由無機材料如氧化矽所製作。然而,氧化矽具有高漏電流,因此限制製造具有高效能裝置之能力,但沒有其他材料比矽更適合製造半導體。因此,為了製造具有高效能之裝置,閘極絕緣層可緊密的以原子層沉積(ALD)製程中形成,其耗費太多時間,因此而無法實際應用。
一實施例提供一種能夠改善效能及簡化製程之薄膜電晶體。
其他實施例提供一種薄膜電晶體之製造方法。
其他實施例提供一種包含薄膜電晶體之顯示裝置。
依據一實施例,提供一種薄膜電晶體,其包含閘極電極、與閘極電極重疊之半導體、電性連接半導體之源極電極、電性連接半導體且面向源極電極之汲極電極、以及位於閘極電極及半導體之間之堆疊的閘極絕緣層。堆疊的閘極絕緣層包含氧化鋁層。
堆疊的閘極絕緣層更可包含位於氧化鋁層之下方或上方之金屬氧化層。
金屬氧化層可包含金屬氧化物,金屬氧化物包含至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群。
金屬氧化物層可包含氧化鉿(HfOx)、氧化釔(YOx)、氧化鋯(ZrOx)、氧化鈦(TiOx)、氧化鎂(MgO)、氧化鈣(CaO)、氧化鍶(SrO)、氧化鋇(BaO)、氧化鉭(Ta2O5)、氧化矽鋯(ZrSiO4)、氧化矽鉿(HfSiO)(0<x≦2)或其組合。
金屬氧化層可具有大約10nrm至大約300nm之厚度,以及氧化鋁層可具有大約10nm至大約200nm之厚度。
氧化鋁層可接觸半導體。
半導體可包含氧化物半導體。
氧化物半導體可包含氧化物包含至少一選自由鋅(Zn)、銦(In)及錫(Sn)所組成之族群。
依據其他實施例,製造薄膜電晶體之方法包含形成閘極電極、形成半導體與閘極電極重疊、形成源極電極及汲極電極以電性連接半導體、以及形成包含氧化鋁層之堆疊的閘極絕緣層於閘極電極及半導體之間。
堆疊的閘極絕緣層之形成可藉由溶液製程執行。
堆疊的閘極絕緣層之形成可包含形成金屬氧化物層及形成氧化鋁層。
金屬氧化物層可包含金屬氧化物,金屬氧化物包含至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群。
氧化鋁層之形成可藉由利用鋁前驅物溶液執行,鋁前驅物溶液包含至少一選自由氫氧化鋁(aluminum hydroxide)、烷氧化鋁(aluminum alkoxide)、檸檬酸鋁(aluminum citrate)、醋酸鋁(aluminum acetate)、碳酸鋁(aluminum carbonate)、(甲基)丙烯酸鋁(aluminum(meth)acrylate)、硝酸鋁(aluminum nitrate)、乙醯丙酮酸鋁(aluminum acetylacetonate)、鹵化鋁(aluminum halide)、硫胺甲酸鋁(aluminum thiocarbamate)、磺酸鋁(aluminum sulfonate)、十一酸鋁(aluminum undecylate)、硼酸鋁(aluminum borate)及其水合物所組成之族群,以及金屬氧化物層之形成可藉由利用金屬前驅物溶液執行包含至少一選自由金屬氫氧化物(metal hydroxide)、金屬烷氧化物(metal alkoxide)、金屬檸檬酸(metal citrate)、金屬醋酸(metal acetate)、金屬碳酸(metal carbonate)、金屬(甲基)丙烯酸(metal(meth)acrylate)、金屬硝酸(metal nitrate)、金屬乙醯丙酮酸(metal acetylacetonate)、金屬鹵化物(metal halide)、金屬硫胺甲酸(metal thiocarbamate)、金屬磺酸(metal sulfonate)、金屬十一酸(metal undecylate)、金屬硼酸(metal borate)及其水合物所組成之族群,其中金屬氧化物層可包含金屬氧化物包含至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群。
堆疊的閘極絕緣層之形成可包含在大約100℃至400℃下退火。
半導體之形成可藉由溶液製程執行。
半導體之形成可包含施加前驅物溶液,前驅物溶液包含至少一選自由鋅(Zn)、銦(In)及錫(Sn)所組成之族群,以及熱處理前驅物溶液以形成氧化物半導體。
依據其他實施例,提供包含該薄膜電晶體之顯示裝置。
110‧‧‧基板
124‧‧‧閘極電極
124a‧‧‧切換控制電極
124b‧‧‧驅動控制電極
140‧‧‧閘極絕緣層
140a‧‧‧金屬氧化物層
140b‧‧‧氧化鋁層
154‧‧‧半導體
154a‧‧‧切換半導體
154b‧‧‧驅動半導體
173‧‧‧源極電極
173a‧‧‧切換輸入電極
173b‧‧‧驅動輸入電極
175‧‧‧汲極電極
175a‧‧‧切換輸出電極
175b‧‧‧驅動輸出電極
180‧‧‧保護層
185‧‧‧接觸孔
191‧‧‧像素電極
270‧‧‧共同電極
361‧‧‧像素定義層
365‧‧‧開口
370‧‧‧有機發光元件
Qs‧‧‧切換電晶體區域
Qd‧‧‧驅動電晶體區域
LD‧‧‧發光區域
S1~S5‧‧‧步驟
第1圖為依據一實施例之薄膜電晶體之剖面圖。
第2圖為依據一實施例之有機發光裝置之剖面圖。
第3A圖為依據範例之薄膜電晶體之傳輸特性之電流-電壓曲線圖。
第3B圖為依據範例之薄膜電晶體之輸出特性之電流-電壓曲線圖。
第4A圖為依據比較範例1之薄膜電晶體之傳輸特性之電流-電壓曲線圖。
第4B圖為依據比較範例1之薄膜電晶體之輸出特性之電流-電壓曲線圖。
第5A圖為依據比較範例2之薄膜電晶體之傳輸特性之電流-電壓曲線圖。
第5B圖為依據比較範例2之薄膜電晶體之輸出特性之電流-電壓曲線圖。
第6圖為薄膜電晶體之製造方法之步驟流程圖。
本發明於下將參照圖式更完整描述本發明之示例性實施例。本發明所屬領域具有通常知識者能夠理解,所描述之實施例可以各種方式修改,而不脫離本發明之精神與範疇。
在圖式中,層、膜、面板、區域等之厚度係為了清楚描述而放大。
說明書中相同元件係以相同參考符號表示。其可理解的是當元件如層、膜、區域或基板位於其他元件“上(on)”時,其可為直接位於其他元件上或可具有其他
元件。相較之下,當元件為直接位於其他元件“上(directly on)”時,則沒有其它元件。
於下,參照第1圖,係描述依據一實施例之薄膜電晶體。
第1圖為依據一實施例之薄膜電晶體之剖面圖。
參照第1圖,依據一實施例之薄膜電晶體包含閘極電極124形成於基板110上、堆疊的閘極絕緣層140形成於閘極電極124上、源極電極173及汲極電極175形成於堆疊的閘極絕緣層140上、半導體154分別電性連接源極電極173及汲極電極175。
基板110可為玻璃基板、高分子基板或矽晶圓。
閘極電極124係連接延著基板110之一方向延伸之閘極線(未繪示)。
半導體154(或半導體層)與閘極電極124重疊。半導體154可為氧化物半導體。氧化物半導體可例如包含至少一選自由鋅(Zn)、銦(In)及錫(Sn)所組成之族群,以及可例如為氧化鋅(ZnO)、氧化銦鋅(IZO)、氧化銦錫(ITO)、氧化鋅錫(ZTO)或其組合。
源極電極173係連接延著基板110之一方向延伸之資料線(未繪示),且當施加電壓時可電性連接半導體154。汲極電極175面向源極電極173且半導體154設置於源極電極173及汲極電極175之間,且當施加電壓時可電性連接半導體154。
堆疊的閘極絕緣層140可位於閘極電極124及半導體154之間,且覆蓋整個基板110之表面。堆疊的閘極絕緣層140可包含氧化鋁層,且可藉由堆疊兩層或多層而形成。
參照第1圖,堆疊的閘極絕緣層140可包含金屬氧化物層140a及氧化鋁層140b。
金屬氧化物層140a可由金屬氧化物所形成,金屬氧化物包含除了鋁之金屬。金屬氧化物可具有從大約4至大約100之相對高的介電常數。金屬氧化物可例如包含至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群,如氧化鉿(HfOx)、氧化釔(YOx)、氧化鋯(ZrOx)、氧化鈦(TiOx)、氧化鎂(MgO)、氧化鈣(CaO)、氧化鍶(SrO)、氧化鋇(BaO)、氧化鉭(Ta2O5)、氧化矽鋯(ZrSiO4)、氧化矽鉿(HfSiO)(0<x≦2)或其組合。
金屬氧化物層140a包含具有高介電常數之金屬氧化物,且因此可使裝置在低電壓下操作且增加作為閘極絕緣層之效能。金屬氧化物層140a之厚度可為大約10nm至大約300nm。特別是,金屬氧化物層140a可具有10nm至大約90nm之厚度,更具體地,大約30nm至大約70nm。
氧化鋁層140b可接觸半導體154。第1圖顯示金屬氧化物層140a位於氧化鋁層140b之下,且半導體154接觸氧化鋁層140a,惟本發明不限於此。金屬氧化物層140a可位於氧化鋁層140b上,且半導體154可接觸金屬氧化物層140a。
氧化鋁層140b具有高介電常數、高電荷遷移率、低臨界電壓及高穩定性。氧化鋁層140b可具有大約10nm至大約200nm之厚度。氧化鋁層140b之厚度範圍可具有低表面粗糙度,且因此具有與半導體出色的接觸特性及降低漏電流。氧化鋁層140b可具有介於大約10nm至大約60nm之厚度範圍,更具體地,大約20nm至大約50nm。
第1圖顯示具有底部閘極結構之薄膜電晶體之範例,惟本發明不限於此,且可包含任何薄膜電晶體之結構,如頂部閘極結構。
於下,前述之薄膜電晶體之製造方法係參照第1圖及第6圖描述。
依據一實施例,薄膜電晶體之製造方法包含形成閘極電極124於基板110上(S1)、形成金屬氧化物層140a於閘極電極124上(S2)、形成氧化鋁層140b於金屬氧化物層上(S3)、形成源極電極173及汲極電極175於氧化鋁層140b上(S4),以及形成半導體154在氧化鋁層140b上與閘極電極124重疊(S5)。源極電極173及汲極電極175係電性連接半導體154。形成堆疊的閘極絕緣層140於閘極電極124及半導體154之間可包含形成金屬氧化物層140a於閘極電極124上(S2),以及形成氧化鋁層140b於金屬氧化物層上(S3)。
形成閘極電極124及形成源極電極173及汲極電極175可分別藉由堆疊導體而執行,且執行光微影製程(photolithography)。
堆疊的閘極絕緣層140及半導體154可分別藉由利用前驅物溶液(precursor solution)溶液製程而形成。於此,溶液製程包含施加包含前驅物及溶劑之前驅物溶液,且接著對所施加之前驅物溶液進行退火。
形成堆疊的閘極絕緣層140可包含形成金屬氧化物層140a及形成氧化鋁層140b。
形成金屬氧化物層140a可藉由例如施加包含金屬前驅物及溶劑之金屬前驅物溶液被執行,且接著對所施加之前驅物溶液進行退火。金屬前驅物可例如為至少一選自由金屬氫氧化物(metal hydroxide)、金屬烷氧化物(metal alkoxide)、金屬檸檬酸(metal citrate)、金屬醋酸(metal acetate)、金屬碳酸(metal carbonate)、金屬(甲基)丙烯酸(metal(meth)acrylate)、金屬硝酸(metal nitrate)、金屬乙醯丙酮酸(metal acetylacetonate)、金屬鹵化物(metal halide)、金屬硫胺甲酸(metal thiocarbamate)、金屬磺酸(metal sulfonate)、金屬十一酸(metal undecylate)、金屬硼酸(metal borate)及其水合物所組成之族群,其中金屬可包含至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群。
形成氧化鋁層140b可被執行,例如藉由施加鋁前驅物溶液包含鋁前驅物及溶劑,且對施加鋁前驅物溶液進行退火。鋁前驅物可例如為至少一選自由氫氧化鋁(aluminum hydroxide)、烷氧化鋁(aluminum alkoxide)、檸檬酸鋁(aluminum citrate)、醋酸鋁(aluminum acetate)、碳酸鋁(aluminum carbonate)、(甲基)丙烯酸鋁(aluminum(meth)acrylate)、硝酸鋁(aluminum nitrate)、乙醯丙酮酸鋁(aluminum acetylacetonate)、鹵化鋁(aluminum halide)、硫胺甲酸鋁(aluminum thiocarbamate)、磺酸鋁(aluminum sulfonate)、十一酸鋁(aluminum undecylate)、硼酸鋁(aluminum borate)及其水合物所組成之族群。
溶劑可為任何成分可於其中溶解之溶劑而不具限制,且可例如為至少一選自由去離子水(deionized water)、甲醇(methanol)、乙醇(ethanol)、丙醇(propanol)、異丙醇(isopropanol)、2-甲氧基乙醇(2-methoxyethanol)、2-乙氧基乙醇(2-ethoxyethanol)、2-丙氧基乙醇(2-propoxyethanol)、2-丁氧基乙醇(2-butoxyethanol)、甲基溶纖劑(methylcellosolve)、乙基溶纖劑(ethylcellosolve)、乙二醇(ethyleneglycol)、二甘醇甲基醚(diethyleneglycolmethylether)、二甘醇乙醚(diethyleneglycolethylether)、二丙二醇甲基醚(dipropyleneglycolmethylether)、甲苯(toluene)、二甲苯(xylene)、己烷(hexane)、庚烷(heptane)、辛烷(octane)、乙酸乙酯(ethylacetate)、乙酸丁酯(butylacetate)、二甘醇二甲醚(diethyleneglycoldimethylether)、二甘醇二乙醚(diethyleneglycoldimethylethylether)、甲基甲氧基丙酸(methylmethoxypropionic acid)、乙基乙氧基酸(ethylethoxypropionic acid)、乙基乳酸(ethyllactic acid)、丙二醇甲基醚乙酸酯(propyleneglycolmethyletheracetate)、丙二醇甲基醚(propyleneglycolmethylether)、丙二醇丙醚(propyleneglycolpropylether)、甲基溶纖劑醋酸酯(methylcellosolveacetate)、乙基溶纖劑醋酸酯(ethylcellosolveacetate)、二甘醇乙酸甲酯(diethyleneglycolmethylacetate)、二甘醇乙酸乙酯
(diethyleneglycolethylacetate)、丙酮(acetone)、甲基異丁基酮(methylisobutylketone)、環己酮(cyclohexanone)、二甲基甲醯胺(dimethyl formamide,DMF)、N,N-二甲基乙醯胺(N,N-dimethyl acetamide,DMAc)、N-甲基-2-吡咯烷酮(N-methyl-2-pyrrolidone)、γ-丁內酯(γ-butyrolactone)、二乙醚(diethylether)、乙二醇二甲醚(ethyleneglycoldimethylether)、二甘醇二甲醚(diglyme)、四氫呋喃(tetrahydrofuran)、乙醯丙酮(acetylacetone)或乙腈(acetonitrile)。
施加溶液可如藉由,例旋轉塗佈、狹縫塗佈、噴墨印刷、噴灑、浸泡等被執行,惟本發明不限於此。
退火可在,例如溫度範圍大約100℃至大約400℃下被執行。藉由退火,金屬前驅物溶液可轉變成金屬氧化物層,且鋁前驅物溶液可轉變成氧化鋁層。退火可藉由在相對低溫下預烘烤前驅物溶液且將溶液從液狀轉變成膠狀而執行。
於此,施加溶液及退火可為一次或多次重複執行以形成具有預先決定厚度之金屬氧化物層140a及氧化鋁層140b。
接著,形成半導體154可藉由利用前驅物之溶液製程執行,例如施加包含前驅物之前驅物溶液以及溶劑,前驅物包含至少一選自由鋅(Zn)、銦(In)或錫(Sn),且接著對所施加之前驅物溶液進行退火。前驅物可例如為包含鋅之前驅物、包含銦之前驅物或包含錫之前驅物。
包含鋅之前驅物可例如包含至少一選自由氫氧化鋅(zinc hydroxide)、烷氧化鋅(zinc alkoxide);檸檬酸鋅(zinc citrate);醋酸鋅(zinc acetate),如三氟乙酸鋅(zinc trifluoroacetate);鋅羰(zinc carbonylate);碳酸鋅(zinc carbonate);(甲基)丙烯酸鋅(zinc(meth)acrylate);硝酸鋅(zinc nitrate);乙醯丙酮鋅(zinc acetylacetonate),如六氟乙醯丙酮鋅(hexafluoroacetylacetonate);鹵化鋅
(zinc halide),如氟化鋅(zinc fluoride)、氯化鋅(zinc chloride)、過氯酸鋅(zinc perchlorate)等;硫代氨基甲酸鋅(zinc thiocarbamate),如二甲基二硫代氨基甲酸鋅(zinc dimethyl dithiocarbamate);磺酸鋅(zinc sulfonate),如三氟甲烷磺酸鋅(zinc trifluoromethane sulfonate);十一酸鋅(zinc undecylate);磷酸鋅(zinc phosphate);硼酸鋅(zinc borate),如四氟硼酸鋅(zinc tetrafluoroborate);或其水合物,惟本發明不限於此。
包含銦之前驅物可例如包含至少一選自由氫氧化銦(indium hydroxide)、烷氧化銦(indium alkoxide);檸檬酸銦(indium citrate);醋酸銦(indium acetate);碳酸銦(indium carbonate);(甲基)丙烯酸銦(indium(meth)acrylate);硝酸銦(indium nitrate);乙醯丙酮銦(indium acetylacetonate);鹵化銦(indium halide),如氯化銦(indium chloride)、氟化銦(indium fluoride)等;硫代氨基甲酸銦(indium thiocarbamate);磺酸銦(indium sulfonate);十一酸銦(indium undecylate);硼酸銦(indium borate);或其水合物,惟本發明不限於此。
包含錫之前驅物可例如包含至少一選自由氫氧化錫(tin hydroxide)、烷氧化錫(tin alkoxide);檸檬酸錫(tin citrate);醋酸錫(tin acetate);碳酸錫(tin carbonate);(甲基)丙烯酸錫(tin(meth)acrylate);硝酸錫(tin nitrate);乙醯丙酮錫(tin acetylacetonate);鹵化錫(tin halide),如氯化錫(tin chloride)、氟化錫(tin fluoride)等;硫代氨基甲酸錫(tin thiocarbamate);磺酸錫(tin sulfonate);十一酸錫(tin undecylate);硼酸錫(tin borate);或其水合物,惟本發明不限於此。
施加前驅物溶液可藉由,例如旋轉塗佈、狹縫塗佈、噴墨印刷、噴灑、浸泡等被執行,惟本發明不限於此。
退火可在,例如溫度範圍大約100℃至大約600℃下被執行。藉由退火,前驅物溶液可轉變成氧化物半導體。
於下,係繪示包含前述薄膜電晶體之顯示裝置。
顯示裝置可應用於包含薄膜電晶體之主動矩陣裝置,例如液晶顯示器(LCD)、有機發光二極體(OLED)裝置、電泳裝置等而不限於此。
於此,係繪示有機發光二極體(OLED)裝置作為顯示裝置之範例。
第2圖為依據一實施例之有機發光裝置之剖面圖。
依據一實施例,有機發光二極體裝置包含切換電晶體區域(Qs)包含切換薄膜電晶體、驅動電晶體區域(Qd)包含驅動薄膜電晶體、以及發光區域(LD)包含有機發光二極體(OLED)在各個像素中。
切換薄膜電晶體具有控制端、輸入端及輸出端。控制端係連接閘極線(未繪示),輸入端係連接資料線(未繪示),以及輸出端係連接驅動薄膜電晶體。切換薄膜電晶體因應施加於閘極線之掃描訊號且傳送施加於資料線之資料訊號至驅動薄膜電晶體中。
驅動薄膜電晶體亦具有控制端、輸入端及輸出端。控制端係連接切換薄膜電晶體,輸入端係連接驅動電壓線(未繪示),以及輸出端係連接有機發光二極體(OLED)。驅動薄膜電晶體根據施加於控制端及輸出端之間的電壓而傳送輸出電流。
有機發光二極體(OLED)具有陽極,其連接驅動薄膜電晶體之輸出端、以及陰極,其連接共同電壓。有機發光二極體(OLED)根據驅動薄膜電晶體之輸出電流發出不同強度的光,且顯示影像。
參照第2圖,切換控制電極124a及驅動控制電極124b係形成於以玻璃、高分子膜、矽晶圓等製成之基板110之上。
切換控制電極124a係連接閘極線(未繪示)且從閘極線接收閘極訊號。
驅動控制電極124b為島型。
在切換控制電極124a及驅動控制電極124b上形成堆疊的閘極絕緣層140。堆疊的閘極絕緣層140包含如前述之金屬氧化物層140a及氧化鋁層140b。
在堆疊的閘極絕緣層140上形成切換半導體154a及驅動半導體154b。切換半導體154a與切換控制電極124a重疊,以及驅動半導體154b與驅動控制電極124b重疊。切換半導體154a及驅動半導體154b分別具有島型且可為前述之氧化物半導體。
在切換半導體154a上形成電性連接切換半導體154a之切換輸入電極173a及切換輸出電極175a。
切換輸入電極173a連接資料線(未繪示)且從資料線接收資料訊號。切換輸出電極175a係連接驅動控制電極124b。
在驅動半導體154b上形成電性連接驅動半導體154b之驅動輸入電極173b及驅動輸出電極175b。驅動輸入電極173b連接驅動電壓線(未繪示)。驅動輸出電極175b連接之後繪示的像素電極191。
在切換輸入電極173a、切換輸出電極175a、驅動輸入電極173b及驅動輸出電極175b上形成保護層180。
保護層180具有露出驅動輸出電極175b之接觸孔185。
在保護層180上形成像素電極191。像素電極191經由接觸孔185連接輸出電極175b。
像素電極191可由導電氧化物形成,例如氧化銦錫(ITO)、氧化銦鋅(IZO)、鋁摻雜氧化鋅(AZO)、氧化銦鎵鋅(IGZO)或其組合。
在像素電極191上形成像素定義層361。像素定義層361具有露出像素電極191之開口365,以及發光區域(LD)係藉由開口365周圍之像素定義層361定義。像素定義層361可例如由感光有機材料製成。
此外,有機發光元件370形成於藉由像素定義層361圍繞之發光區域(LD)中。
有機發光元件370包含發光層及輔助層。
發光層可由有機材料製成,其先天顯示顏色如紅、綠及藍等,亦藉由這些顏色的組合顯示白光。
輔助層可形成於發光層之上及/或之下,且可為電洞注入層(HIL)、電洞傳輸層(HTL)、電子注入層(EIL)及/或電子傳輸層(ETL)。
在像素定義層361及有機發光元件370上形成共同電極270。共同電極270可由透明導體或具有高反射率之金屬製成。
在前述有機發光裝置中,像素電極191及共同電極270之任一個為陽極,而其他則為陰極。陽極及陰極係成對供應電流至有機發光元件370。
接下來更詳細繪示本發明之範例。然而,不限於下述範例。
前驅物溶液之準備
準備範例1
將氯化鉿(hafnium chloride)加入乙腈(acetonitrile)和乙二醇(ethylene glycol)(35:65(v/v))混合溶劑以達到0.2M之濃度,且接著在氮氣環境下強烈地攪拌混合物以準備鉿(hafnium)前驅物溶液。
準備範例2
將氯化鋁(aluminum chloride)加入乙腈(acetonitrile)和乙二醇(ethylene glycol)(35:65(v/v))混合溶劑以達到0.2M之濃度,且接著在氮氣環境下強烈地攪拌混合物以準備鋁(aluminum)前驅物溶液。
準備範例3
將氯化鋅(zinc chloride)以及氯化錫(tin chloride)加入乙腈(acetonitrile)和乙二醇(ethylene glycol)(35:65(v/v))混合溶劑以達到0.6M之濃度,且在氮氣環境下強烈地攪拌混合物以準備鋅錫前驅物溶液。
薄膜電晶體之製造
範例
將鉬(Mo)沉積於玻璃基板上且藉由微影製程圖樣化以形成閘極電極。接著,依據準備範例1之鉿前驅物溶液係旋轉塗佈於其上,且於250℃下退火以形成大約厚度70nm之氧化鉿層。然後,依據準備範例2之鋁前驅物溶液係旋轉塗佈於氧化鉿層上,且於250℃下退火以形成大約厚度25nm之氧化鋁層。然後,IZO係沉積於其上且藉由微影製程圖樣化以形成源極電極及汲極電極。在氧化鋁層、源極電極及汲極電極上,依據準備範例3之鋅錫前驅物溶液係旋轉塗佈於其上,且於250℃下退火以形成氧化鋅錫(ZTO)半導體。產生之產物係於400℃下退火以形成薄膜電晶體。
比較範例1
薄膜電晶體係依據如範例之相同方法製造,除了不形成氧化鉿層。
比較範例2
薄膜電晶體係依據如範例之相同方法製造,除了不形成氧化鋁層。
評估
依據範例及比較範例1及2之薄膜電晶體係以電流-電壓特性而評估。
第3A圖為依據範例之薄膜電晶體之傳輸特性之電流-電壓曲線圖。第3B圖為依據範例之薄膜電晶體之輸出特性之電流-電壓曲線圖。第4A圖為依據比較範例1之薄膜電晶體之傳輸特性之電流-電壓曲線圖。第4B圖為依據比較範例1之薄膜電晶體之輸出特性之電流-電壓曲線圖。第5A圖為依據比較範例2
之薄膜電晶體之傳輸特性之電流-電壓曲線圖。第5B圖為依據比較範例2之薄膜電晶體之輸出特性之電流-電壓曲線圖。
參照第3A及3B圖,依據範例之薄膜電晶體結果具有高閘極偏壓(gate bias)穩定性及沒有磁滯(hysteresis)特性且具有出色的電荷遷移率及低次臨界擺幅(subthreshold swing)。
相較之下,參照第4A及4B圖,依據比較範例1之薄膜電晶體具有好的電荷遷移率及低次臨界擺幅,惟具有大於或等於2V之磁滯特性。
參照第5A及5B圖,依據比較範例2之薄膜電晶體具有高閘極偏壓穩定性且沒有磁滯特性,惟具有低電荷遷移率及高次臨界擺幅。
當本揭露已針對目前被視為具體之例示性實施例而描述時,其可被理解的是本發明不限於所揭露之實施例,惟,相反地,其係意欲涵蓋各種包含在後附申請專利範圍之精神與範疇中之修改及等校配置。
110‧‧‧基板
124‧‧‧閘極電極
140‧‧‧閘極絕緣層
140a‧‧‧金屬氧化物層
140b‧‧‧氧化鋁層
154‧‧‧半導體
173‧‧‧源極電極
175‧‧‧汲極電極
Claims (12)
- 一種薄膜電晶體,包含:一閘極電極;一半導體,與該閘極電極重疊;一源極電極,電性連接該半導體;一汲極電極,電性連接該半導體且面向該源極電極;以及一堆疊的閘極絕緣層,位於該閘極電極及該半導體之間,且包含一氧化鋁層及一金屬氧化物層,其中該金屬氧化物層係至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群的金屬氧化物,該氧化鋁層係直接與該半導體接觸,該金屬氧化物層係直接與該閘極電極接觸,且該氧化鋁層係設於該金屬氧化物層之上方。
- 如申請專利範圍第1項所述之薄膜電晶體,其中該金屬氧化物層包含HfOx、YOx、ZrOx、TiOx、MgO、CaO、SrO、BaO、Ta2O5、ZrSiO4、HfSiO或其組合,其中0≦x≦2。
- 如申請專利範圍第1項所述之薄膜電晶體,其中該金屬氧化物層具有大約10nm至大約300nm之厚度,且該氧化鋁層具有大約10nm至200nm之厚度。
- 如申請專利範圍第1項所述之薄膜電晶體,其中該半導體包含一氧化物半導體。
- 如申請專利範圍第4項所述之薄膜電晶體,其中該氧化物半導 體包含一氧化物,該氧化物包含至少一選自由鋅(Zn)、銦(In)及錫(Sn)所組成之族群。
- 一種製造薄膜電晶體之方法,包含:形成一閘極電極;形成一半導體與該閘極電極重疊;形成一源極電極及一汲極電極以電性連接該半導體;以及形成一堆疊的閘極絕緣層,其包含介於該閘極電極及該半導體間之一氧化鋁層及一金屬氧化物層,其中該金屬氧化物層係至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群的金屬氧化物,該氧化鋁層係直接與該半導體接觸,該金屬氧化物層係直接與該閘極電極接觸,且該氧化鋁層係設於該金屬氧化物層之上方。
- 如申請專利範圍第6項所述之方法,其中該堆疊的閘極絕緣層之形成係藉由一溶液製程而執行。
- 如申請專利範圍第6項所述之方法,其中該氧化鋁層之形成係藉由利用一鋁前驅物溶液而執行,該鋁前驅物溶液包含至少一選自由氫氧化鋁(aluminum hydroxide)、烷氧化鋁(aluminum alkoxide)、檸檬酸鋁(aluminum citrate)、醋酸鋁(aluminum acetate)、碳酸鋁(aluminum carbonate)、(甲基)丙烯酸鋁(aluminum(meth)acrylate)、硝酸鋁(aluminum nitrate)、乙醯丙酮酸鋁(aluminum acetylacetonate)、鹵化鋁(aluminum halide)、硫胺甲酸鋁(aluminum thiocarbamate)、磺酸鋁(aluminum sulfonate)、十一酸鋁(aluminum undecylate)、硼酸鋁(aluminum borate)及其水合物所組成之族群;以及該金屬氧化物層之形成係藉由利用一金屬前驅物溶液執行,該金屬前驅物溶液包含至少一選自由金屬氫氧化物(metal hydroxide)、金屬烷氧化物(metal alkoxide)、金屬檸檬酸(metal citrate)、金屬醋酸(metal acetate)、金屬碳酸(metal carbonate)、金屬(甲基)丙烯酸(metal(meth)acrylate)、金屬硝酸(metal nitrate)、金屬乙醯丙酮酸(metal acetylacetonate)、金屬鹵化物(metal halide)、金屬硫胺甲酸(metal thiocarbamate)、金屬磺酸(metal sulfonate)、金屬十一酸(metal undecylate)、金屬硼酸(metal borate)及其水合物所組成之族群,其中該金屬氧化物層包含一金屬氧化物,該金屬氧化物包含至少一選自由鉿(Hf)、鎂(Mg)、鈣(Ca)、鋯(Zr)、矽(Si)、釔(Y)、鍶(Sr)、鉭(Ta)、鋇(Ba)及鈦(Ti)所組成之族群。
- 如申請專利範圍第6項所述之方法,其中該堆疊的閘極絕緣層之形成包含在大約100℃至大約400℃退火。
- 如申請專利範圍第6項所述之方法,其中該半導體之形成係藉由一溶液製程而執行。
- 如申請專利範圍第10項所述之方法,其中該半導體之形成包含:施加一前驅物溶液,其包含至少一選自由鋅(Zn)、銦(In)及錫(Sn)所組成之族群;以及 熱處理該前驅物溶液以形成一氧化物半導體。
- 一種包含如申請專利範圍第1項所述之該薄膜電晶體之顯示裝置。
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